0% found this document useful (0 votes)
139 views7 pages

EX # 2 (PN Diode)

This document describes an experiment to observe the forward and reverse bias voltage-current (V-I) characteristics of a PN junction diode. The apparatus includes an IN4007 diode, resistors, ammeters, a voltmeter, breadboard, and power supply. The procedure involves taking voltage and current readings across the diode under both forward and reverse bias conditions and plotting the V-I graph. Key parameters like cut-in voltage, reverse saturation current, and resistances are determined.

Uploaded by

manish
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
139 views7 pages

EX # 2 (PN Diode)

This document describes an experiment to observe the forward and reverse bias voltage-current (V-I) characteristics of a PN junction diode. The apparatus includes an IN4007 diode, resistors, ammeters, a voltmeter, breadboard, and power supply. The procedure involves taking voltage and current readings across the diode under both forward and reverse bias conditions and plotting the V-I graph. Key parameters like cut-in voltage, reverse saturation current, and resistances are determined.

Uploaded by

manish
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
You are on page 1/ 7

Vivekananda Institute of Technology-East

Electronics and Communication Department

Experiment No. # 2

OBJECT To observe and draw the Forward and Reverse bias V-I Characteristics of a
P-N Junction diode & calculate cut – in voltage, reverse saturation current and static &
dynamic resistance.

APPARATUS

S. NO. NAME OF ITEM SPECIFICATION QUANTITY

1 P-N jn. Diode IN4007 1


2 Resistor 1KΩ 1

3 Ammeters (0-200 mA, 0- 1


500mA)
4 Voltmeter (0-20 V) 1
5 Bread board 1

6 Regulated D.C. power supply 0- 24 V 1

7 Connecting wires 4
8 Banana leads 5

THEORY
A p-n junction diode conducts only in one direction. The V-I characteristics of the diode
are curve between voltage across the diode and current through the diode. When
external voltage is zero, circuit is open and the potential barrier does not allow the
current to flow. Therefore, the circuit current is zero. When P-type (Anode is connected
to +ve terminal and n- type (cathode) is connected to –ve terminal of the supply voltage,
is known as forward bias. The potential barrier is reduced when diode is in the forward
biased condition. At some forward voltage, the potential barrier altogether eliminated

Page 1 of 7
Vivekananda Institute of Technology-East
Electronics and Communication Department

and current starts flowing through the diode and also in the circuit. The diode is said to
be in ON state. The current increases with increasing forward voltage.
When N-type (cathode) is connected to +ve terminal and P-type (Anode) is connected
–ve terminal of the supply voltage is known as reverse bias and the potential barrier
across the junction increases. Therefore, the junction resistance becomes very high and
a very small current (reverse saturation current) flows in the circuit. The diode is said to
be in OFF state. The reverse bias current due to minority charge carriers.

CUT IN VOLTAGE
The forward voltage at which the current through the P-N Junction starts increasing
rapidly is called as Cut in voltage or knee voltage.

BREAKDOWN VOLTAGE
The critical value of the voltage, at which the breakdown of a P-N junction diode occurs
is called the breakdown voltage. The breakdown voltage depends on the width of the
depletion region, which, in turn, depends on the doping level. The junction offers almost
zero resistance at the breakdown point.

DIODE RESISTANCES
An ideal diode offers zero resistance when forward biased and infinite resistance when
reverse biased, but practical diode is different from ideal diode. Diode resistances are
classified in two ways: static or dynamic resistance.

D.C. or STATIC RESISTANCE


Resistance offered by a diode to the DC conditions is called DC or static resistance. It is
simply the ratio of DC voltage across diode to DC current through diode. Since the
current is high in forward biased conditions and negligible in reverse conditions,
therefore, forward DC resistance(RF) is much lower than reverse static resistance (R r).
In forward region the static resistance is equal to reciprocal of the slope of a line joining
operating point to the origin.

Page 2 of 7
Vivekananda Institute of Technology-East
Electronics and Communication Department

Rf = VD/ID

A.C. or DYNAMIC RESISTANCE


Resistance offered by diode to the AC conditions is called Dynamic resistance of diode.
Dynamic resistance is basically incremental resistance and defined as ratio of change in
applied voltage to the change in resulting current.
r = dV/dI

CIRCUIT DIAGRAM

FORWARD BIAS

REVERSE BIAS

Page 3 of 7
Vivekananda Institute of Technology-East
Electronics and Communication Department

V I CHARACTERISTIC

PROCEDURE

Page 4 of 7
Vivekananda Institute of Technology-East
Electronics and Communication Department

FORWARD BIAS

1. Connections are made as per the circuit diagram.


2. For forward bias, the RPS +ve is connected to the anode of the diode and
RPS –ve is connected to the cathode of the diode.
3. Switch on the power supply and increases the input voltage (supply voltage) in
Steps.
4. Note down the corresponding current flowing through the diode and voltage
across the diode for each and every step of the input voltage.
5. The reading of voltage and current are tabulated.
6. Graph is plotted between voltage and current.

OBSERVATION TABLE

S.NO APPLIED VOLTAGE (V) VOLTAGE ACROSS CURRENT


. DIODE (V) THROUGH DIODE
(mA)
1
2
3
4
5
6
.
.

PROCEDURE

Page 5 of 7
Vivekananda Institute of Technology-East
Electronics and Communication Department

REVERSE BIAS

1. Connections are made as per the circuit diagram


2 . For reverse bias, the RPS +ve is connected to the cathode of the diode and
RPS –ve is connected to the anode of the diode.
3. Switch on the power supply and increase the input voltage (supply voltage) in
Steps
4. Note down the corresponding current flowing through the diode voltage
across the diode for each and every step of the input voltage.
5. The readings of voltage and current are tabulated
6. Graph is plotted between voltage and current.

OBSEVATION TABLE

S.NO APPLIED VOLTAGE (V) VOLTAGE ACROSS CURRENT THROUGH


DIODE (V) DIODE (µA)
1
2
3
4
.
.

RESULT

Page 6 of 7
Vivekananda Institute of Technology-East
Electronics and Communication Department

Forward and Reverse Bias characteristics for a p-n junction diode is observed. & graph
has been plotted.
Cut in voltage is …………………..
Breakdown voltage is …………….
Static resistance is …………………

PRECAUTIONS

1. While doing the experiment do not exceed the ratings of the diode. This may lead to
damage of the diode.
2. Connect voltmeter and Ammeter in correct polarities as shown in the circuit diagram.
3. Do not switch ON the power supply unless you have checked the circuit connections
as per the circuit diagram.
4. Parallax error should be avoided while taking the readings from the Analog meters.

VIVA QESTIONS
1. Define depletion region of a diode?
2. What is meant by transition & space charge capacitance of a diode?
3. Is the V-I relationship of a diode Linear or Exponential?
4. Define cut-in voltage of a diode and specify the values for Si and Ge diodes?
5. What are the applications of a p-n diode?
6. Draw the ideal characteristics of P-N junction diode?
7. What is the diode equation?
8. What is PIV?
9. What is the break down voltage?
10. What is the effect of temperature on PN junction diodes?

Page 7 of 7

You might also like