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 SN65HVD1050
www.ti.com
SLLS632A – DECEMBER 2005 – REVISED MAY 2007

EMC OPTIMIZED CAN TRANSCEIVER

1FEATURES
•
2 Improved Replacement for the TJA1050 DESCRIPTION
• High Electromagnetic Immunity (EMI) The SN65HVD1050 meets or exceeds the
• Very Low Electromagnetic Emissions (EME) specifications of the ISO 11898 standard for use in
applications employing a Controller Area Network
• Meets or Exceeds the Requirements of (CAN). The device is also qualified for use in
ISO 11898-2 automotive applications in accordance with
• Bus-Fault Protection of –27 V to 40 V AEC-Q100. (1)
• Dominant Time-Out Function As a CAN transceiver, this device provides differential
• Power-Up/Down Glitch-Free Bus Inputs and transmit capability to the bus and differential receive
Outputs capability to a CAN controller at signaling rates up to
1 megabit per second (Mbps) (2).
– High Input Impedance with Low VCC
– Monotonic Outputs During Power Cycling Designed for operation is especially harsh
environments, the HVD1050 features cross-wire,
APPLICATIONS over-voltage and loss of ground protection from -27 V
to 40V, over-temperature shut down, a -12 V to 12 V
• Industrial Automation common-mode range, and will withstand voltage
– DeviceNet™ Data Buses (Vendor ID #806) transients from -200 V to 200 V according to ISO
• SAE J2284 High Speed CAN for Automotive 7637.
Applications (1) The device is available with Q100 qualification as the
• SAE J1939 Standard Data Bus Interface SN65HVD1050Q (PRODUCT PREVIEW).
(2) The signaling rate of a line is the number of voltage
• ISO 11783 Standard Data Bus Interface transitions that are made per second expressed in the units
• NMEA 2000 Standard Data Bus Interface bps (bits per second).

FUNCTION BLOCK DIAGRAM

8
Silent Mode S
VCC
VCC
3 30 mA 5
Dominant Over-Temperature VCC/2 Vref
Time-Out Sensor

30 mA
7
1 CANH
TXD Driver 6
CANL

4
RXD

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2 DeviceNet is a trademark of Open DeviceNet Vendors Association, Inc.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas Copyright © 2005–2007, Texas Instruments Incorporated
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
SN65HVD1050 www.ti.com
SLLS632A – DECEMBER 2005 – REVISED MAY 2007

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

DESCRIPTION (CONTINUED)
Pin 8 provides for two different modes of operation: high-speed or silent mode. The high-speed mode of
operation is selected by connecting S (pin 8) to ground.
If a high logic level is applied to the S pin of the SN65HVD1050, the device enters a listen-only silent mode
during which the driver is switched off while the receiver remains fully functional.
In silent mode, all bus activity is passed by the receiver output to the local protocol controller. When data
transmission is required, the local protocol controller reverses this low-current silent mode by placing a logic-low
on the S pin to resume full operation.
A dominant-time-out circuit in the SN65HVD1050 prevents the driver from blocking network communication with
a hardware or software failure. The time-out circuit is triggered by a falling edge on TXD (pin 1). If no rising edge
is seen before the time-out constant of the circuit expires, the driver is disabled. The circuit is then reset by the
next rising edge on TXD.
Vref (pin 5) is available as a VCC/2 voltage reference.
The SN65HVD1050 is characterized for operation from –40°C to 125°C.

SN65HVD1050

TXD 1 8 S
GND 2 7 CANH
VCC 3 6 CANL
RXD 4 5 Vref

ORDERING INFORMATION
MARKED
PART NUMBER PACKAGE ORDERING NUMBER
AS
SN65HVD1050D (rail)
SN65HVD1050 SOIC-8 VP1050
SN65HVD1050DR (reel)

ABSOLUTE MAXIMUM RATINGS (1)

UNIT
VCC Supply voltage (2) –0.3 V to 7 V
Voltage range at any bus terminal (CANH, CANL, Vref) –27 V to 40 V
IO Receiver output current 20 mA
VI Voltage input, transient pulse (3) (CANH, CANL) -200 V to 200 V
VI Voltage input range (TXD, S) -0.5 V to 6 V
TJ Junction temperature –55°C to 170°C

(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
(3) Tested in accordance with ISO 7637, test pulses 1, 2, 3a, 3b, 5, 6, and 7.

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SLLS632A – DECEMBER 2005 – REVISED MAY 2007

ELECTROSTATIC DISCHARGE PROTECTION (1)

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS VALUE
IEC Contact Discharge IEC 61000-4-2 Bus terminals vs GND ±6 kV
JEDEC Standard 22, Bus terminals vs GND ±8 kV
Human Body Model
Test Method A114-C.01 All pins ±4 kV
Field-Induced-Charged JEDEC Standard 22,
All pins ±1.5 kV
Device Model Test Method C101
Machine Model ANSI/ESDS5.2-1996 ±200 V

(1) All typical values at 25°C.

RECOMMENDED OPERATING CONDITIONS

MIN NOM MAX UNIT
VCC Supply voltage 4.75 5.25 V
VI or VIC Voltage at any bus terminal (separately or common mode) –12 12 V
VIH High-level input voltage 2 5.25 V
TXD, S
VIL Low-level input voltage 0 0.8 V
VID Differential input voltage –7 7 V
Driver –70
IOH High-level output current mA
Receiver –2
Driver 70
IOL Low-level output current mA
Receiver 2
See Thermal Characteristics table, 1 Mbps minimum
TJ Junction temperature –40 150 °C
signaling rate with RL = 54Ω

SUPPLY CURRENT
over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Silent mode S at VCC, VI = VCC 6 10
ICC 5-V Supply current Dominant VI = 0 V, 60 Ω Load, S at 0 V 50 70 mA
Recessive VI = VCC, No Load, S at 0 V 6 10

DEVICE SWITCHING CHARACTERISTICS

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
td(LOOP1) Total loop delay, driver input to receiver output,
90 190
recessive to dominant
Figure 9, S at 0V ns
td(LOOP2) Total loop delay, driver input to receiver output,
90 190
dominant to recessive

DRIVER ELECTRICAL CHARACTERISTICS

over recommended operating conditiions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
CANH VI = 0 V, S at 0 V, RL = 60 Ω, See Figure 1 2.9 3.4 4.5
VO(D) Bus output voltage (Dominant) V
CANL and Figure 2 0.8 1.5
VI = 3 V, S at 0 V, RL = 60 Ω, See Figure 1
VO(R) Bus output voltage (Recessive) 2 2.3 3 V
and Figure 2

(1) All typical values are at 25°C with a 5-V supply.

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DRIVER ELECTRICAL CHARACTERISTICS (continued)

over recommended operating conditiions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
VI = 0 V, RL = 60 Ω, S at 0 V, See Figure 1,
1.5 3 V
Figure 2, and Figure 3
VOD(D) Differential output voltage (Dominant)
VI = 0 V, RL = 45 Ω, S at 0 V, See Figure 1,
1.4 3 V
Figure 2, and Figure 3
VI = 3 V, S at 0 V, See Figure 1 and Figure 2 –0.012 0.012
VOD(R) Differential output voltage (Recessive) V
VI = 3 V, S at 0 V, No Load –0.5 0.05
Steady state common-mode output
VOC(ss) 2 2.3 3 V
voltage
S at 0 V, Figure 8
Change in steady-state common-mode
ΔVOC(ss) 30 mV
output voltage
IIH High-level input current, TXD input VI at VCC –2 2
IIL Low-level input current, TXD input VI at 0 V –50 –10 µA
IO(off) Power-off TXD output current VCC at 0 V, TXD at 5 V 1
VCANH = -12 V, CANL Open, See Figure 11 –105 –72
VCANH = 12 V, CANL Open, SeeFigure 11 0.36 1
IOS(ss) Short-circuit steady-state output current mA
VCANL = -12 V, CANH Open, See Figure 11 –1 –0.5
VCANL = 12 V, CANH Open, See Figure 11 71 105
CO Output capacitance See receiver input capacitance

DRIVER SWITCHING CHARACTERISTICS

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH Propagation delay time, low-to-high-level output 25 65 120
tPHL Propagation delay time, high-to-low-level output 25 45 90
S at 0 V, See Figure 4 ns
tr Differential output signal rise time 25
tf Differential output signal fall time 50
ten Enable time from silent mode to dominant See Figure 7 1 µs
t(dom) Dominant time-out ↓VI, See Figure 10 300 450 700 µs

RECEIVER ELECTRICAL CHARACTERISTICS

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
VIT+ Positive-going input threshold voltage 800 900
S at 0 V, See Table 1
VIT– Negative-going input threshold voltage 500 650 mV
Vhys Hysteresis voltage (VIT+ – VIT–) 100 125
VOH High-level output voltage IO = –2 mA, See Figure 6 4 4.6 V
VOL Low-level output voltage IO = 2 mA, See Figure 6 0.2 0.4 V
CANH or CANL = 5 V,
II(off) Power-off bus input current Other pin at 0 V, 165 250 µA
VCC at 0 V, TXD at 0 V
IO(off) Power-off RXD leakage current VCC at 0 V, RXD at 5 V 20 µA
TXD at 3 V,
CI Input capacitance to ground, (CANH or CANL) 13
VI = 0.4 sin (4E6πt) + 2.5 V pF
CID Differential input capacitance TXD at 3 V, VI = 0.4 sin (4E6πt) 5
RID Differential input resistance 30 80
TXD at 3 V, S at 0 V kΩ
RIN Input resistance, (CANH or CANL) 15 30 40

(1) All typical values are at 25°C with a 5-V supply.

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RECEIVER ELECTRICAL CHARACTERISTICS (continued)

over recommended operating conditions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
Input resistance matching
RI(m) V(CANH) = V(CANL) –3% 0% 3%
[1 – (RIN (CANH) / RIN (CANL))] x 100%

RECEIVER SWITCHING CHARACTERISTICS

over recommended operating conditiions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tPLH Propagation delay time, low-to-high-level output 60 100 130 ns
tPHL Propagation delay time, high-to-low-level output 45 70 90 ns
S at 0 V or VCC, See Figure 6
tr Output signal rise time 8 ns
tf Output signal fall time 8 ns

S-PIN CHARACTERISTICS
over recommended operating conditiions (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IIH High level input current S at 2 V 20 40 70
µA
IIL Low level input current S at 0.8 V 5 20 30

VREF-PIN CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VO Reference output voltage –50 µA < IO < 50 µA 0.4 VCC 0.5 VCC 0.6 VCC V

THERMAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
(1)
Low-K thermal resistance 211
θJA Junction-to-Air
High-K thermal resistance 131
Junction-to-Board Thermal °C/W
θJB 53
Resistance
Junction-to-Case Thermal
θJC 79
Resistance
VCC = 5.0 V, Tj = 27°C, RL = 60 Ω, S at 0 V, Input to
TXD a 500 kHz, 50% duty cycle square wave. CL at 112 mW
RXD = 15 pF
PD Average power dissipation
VCC = 5.5 V, Tj = 130°C, RL = 45 Ω, S at 0 V, Input to
TXD a 500 kHz, 50% duty cycle square wave. CL at 170
RXD = 15 pF
Junction temperature, thermal
TJ_shutdown 190 °C
shutdown (2)

(1) Tested in accordance with the Low-K or High-K thermal metric definitions of EIA/JESD51-3 for leaded surface-mount packages.
(2) Extended operation in thermal shutdown may affect device reliability, see APPLICATIONS INFORMATION.

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FUNCTION TABLES

DRIVER
INPUTS OUTPUTS BUS STATE
TXD (1) S (1) CANH (1) CANL (1)
L L or Open H L DOMINANT
H X Z Z RECESSIVE
Open X Z Z RECESSIVE
X H Z Z RECESSIVE

(1) H = high level; L = low level; X = irrelevant; ? = indeterminate; Z = high impedance

RECEIVER
DIFFERENTIAL INPUTS OUTPUT RXD (1) BUS STATE
VID = V(CANH) – V(CANL)
VID ≥ 0.9 V L DOMINANT
0.5 V < VID < 0.9 V ? ?
VID ≤ 0.5 V H RECESSIVE
Open H RECESSIVE

(1) H = high level; L = low level; X = irrelevant; ? = indeterminate; Z = high impedance

PARAMETER MEASUREMENT INFORMATION

IO(CANH) Dominant
 3.5 V VO(CANH)

TXD VO (CANH)
II RL
VOD
VO(CANH) + VO(CANL) Recessive  2.5 V
2
S I I(S)
VI VOC
+ I O(CANL)
VI(S) V O(CANL)
_  1.5 V VO(CANL)

Figure 1. Driver Voltage, Current, and Test Definition Figure 2. Bus Logic State Voltage Definitions

330 W +1%
CANH

TXD
0V VOD RL
+
_ −2 V 3 VTEST 3 7 V
S
CANL
330 W +1%

Figure 3. Driver VOD Test Circuit

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PARAMETER MEASUREMENT INFORMATION (continued)

CANH
VCC
VI
VCC/2 VCC/2

TXD 0V
RL = 60 W VO
±1% tPLH tPHL
CL = 100 pF VO(D)
VI (see Note B) 90%
0.9 V
VO 0.5 V
S 10%
VO(R)
(See Note A) CANL tr tf

Figure 4. Driver Test Circuit and Voltage Waveforms

CANH
VI (CANH) RXD
IO
VID
V + VI (CANL)
VIC = I (CANH)
2
VO
VI (CANL) CANL

Figure 5. Receiver Voltage and Current Definitions

CANH 3.5 V
VI 2V 2.4 V
RXD IO
V 1.5 V
I
tPLH tPHL
CANL VOH
(See Note A) 1.5 V CL = 15 pF + 20% 90%
VO 0.7 VCC
S (See Note B) VO 0.3 VCC
10% VOL
tr tf

A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 125 kHz, 50% duty cycle, tr ≤ 6
ns, tf ≤ 6ns, ZO = 50 Ω.
B. CL includes instrumentation and fixture capacitance within 20%.

Figure 6. Receiver Test Circuit and Voltage Waveforms

Table 1. Differential Input Voltage Threshold Test

INPUT OUTPUT
VCANH VCANL |VID| R
–11.1 V –12 V 900 mV L VOL
12 V 11.1 V 900 mV L
–6 V –12 V 6V L
12 V 6V 6V L
–11.5 V –12 V 500 mV H VOH
12 V 11.5 V 500 mV H
–12 V –6 V 6V H
6V 12 V 6V H
Open Open X H

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DUT

CANH VCC
TXD VI 50 %
0V CL
60 W 0V
+1%
S VOH
VI CANL
NOTE: CL = 100 pF VO 50 %
RXD includes VOL
instrumentation ten
+ and fixture capacitance
within ±20% NOTE: All VI input pulses are supplied by a generator having the
VO following characteristics: tr or tf ≤ 6 ns, Pulse Repetition Rate
(PRR) = 25 kHz, 50% duty cycle
_ 15 pF +20%

Figure 7. ten Test Circuit and Waveform

27 W +1%
CANH DVOC(SS)
TXD
VI VOC
CANL
S 47 nF V = VO(CANH) + VO(CANL)
27 W +1% +20% OC 2

NOTE: All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns.
Pulse Repetition Rate (PRR) = 125 kHz, 50% duty cycle.

Figure 8. Common Mode Output Voltage Test and Waveforms

DUT

CANH VCC
TXD Input 50%
TXD 60 W
VI CL 0V
±1%
tloop2 tloop1

S CANL VOH
50% 50%
RXD Output
NOTE: CL = 100 pF VOL
RXD includes instrumentation
and fixture capacitance
+ within±20%
VO
_ 15 pF ±20%

A. All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns.
Pulse Repetition Rate (PRR) = 125 kHz, 50% duty cycle.

Figure 9. t(LOOP) Test Circuit and Waveform

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VCC
VI
TXD
RL = 60 W VOD 0V
+1%
CL VOD(D)
VI (See Note B)
VOD
900 mV
S 500 mV
(See Note A) CANH 0V
tdom

A. All VI input pulses are from 0 V to VCC and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns.
Pulse Repetition Rate (PRR) = 500 Hz, 50% duty cycle.
B. CL = 100 pF includes instrumentation and fixture capacitance within ±20%.

Figure 10. Dominant Time-Out Test Circuit and Waveforms

| IOS(SS) |
IOS | IOS(P) |

CANH 200 ms
TXD
0V
0 V or VCC
12 V
S CANL −12 V or 12 V
VIN Vin
0V

or 10 ms

0V
Vin

−12 V

Figure 11. Driver Short-Circuit Current Test and Waveform

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DEVICE INFORMATION

Table 2. Parametric Cross Reference With the TJA1050

(1)
TJA1050 PARAMETER HVD1050
TRANSMITTER SECTION
VIH High-level input voltage Recommended VIH
VIL Low-level input voltage Recommended VIL
IIH High-level input current Driver IIH
IIL Low-level input current Driver IIL
BUS SECTION
ILI Power-off bus input current Receiver II(off)
IO(SC) Short-circuit output current Driver IOS(SS)
VO(dom) Dominant output voltage Driver VO(D)
Vi(dif)(th) Differential input voltage Receiver VIT and recommended VID
Vi(dif)(hys) Diffrential input hysteresis Receiver Vhys
VO(reces) Recessive output voltage Driver VO(R)
VO(dif)(bus) Differential bus voltage Driver VOD(D) and VOD(R)
Ri(cm) CANH, CANL input resistance Receiver RIN
Ri(dif) Differential input resistance Receiver RID
Ri(cm)(m) Input resistance matching Receiver RI (m)
Ci Input capacitance to ground Receiver CI
Ci(dif) Differential input capacitance Receiver CID
RECEIVER SECTION
IOH High-level output current Recommended IOH
IOL Low-level output current Recommended IOL
Vref PIN SECTION
Vref Reference output voltage VO
TIMING SECTION
td(TXD-BUSon) Delay TXD to bus active Driver tPLH
td(TXD-BUSoff) Delay TXD to bus inactive Driver tPHL
td(BUSon-RXD) Delay bus active to RXD Receiver tPHL
td(BUSoff-RXD) Delay bus inactive to RXD Receiver tPLH
td(TXD-BUSon) + td(BUSon-RXD) Device tLOOP1
td(TXD-BUSoff) + td(BUSoff-RXD) Device tLOOP2
tdom(TXD) Dominant time out Driver t(dom)
S PIN SECTION
VIH High-level input voltage Recommended VIH
VIL Low-level input voltage Recommended VIL
IIH High-level input current IIH
IIL Low-level input current IIL

(1) From TJA1050 Product Specification, Philips Semiconductors, 2002 May 16.

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Equivalent Input and Output Schematic Diagrams

TXD Input RXD Output

Vcc
Vcc

4.3 kW 25 W
Input Output

6V 6V

CANH Input CANL Input

Vcc Vcc

10 kW 10 kW
20 kW 20 kW
Input Input

10 kW 10 kW
40 V
40 V

S Input CANH and CANL Outputs

Vcc Vcc

4.3 kW CANH
Input CANL

6V 40 kW 40 V 40 V

Vref Output
Vcc

2 kW
Output

2 kW
40 V

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TYPICAL CHARACTERISTICS

RECESSIVE-TO-DOMINANT LOOP TIME DOMINANT-TO-RECESSIVE LOOP TIME

vs vs
FREE-AIR TEMPERATURE (across VCC) FREE-AIR TEMPERATURE (across VCC)
150 170
t LOOP1− Recessive-to-Dominant Loop Time − ns

t LOOP2 − Dominant-to-Recessive Loop Time − ns

S at 0 V, S at 0 V,
RL = 60 W, RL = 60 W,
CL = 100 pF, CL = 100 pF,
145 165
Air Flow at 7 cf/m, Air Flow at 7 cf/m,
TXD Input is a 125 kHz, TXD Input is a 125 kHz,
50% Duty Cycle Pulse 50% Duty Cycle Pulse
140 160
VCC = 4.75 V
VCC = 5.25 V

135 155 VCC = 5 V

130 150
VCC = 5 V

125 145 VCC = 4.75 V

VCC = 5.25 V

120 140
−40 0 25 70 125 −40 0 25 70 125
TA − Free-Air Temperature − °C TA − Free-Air Temperature − °C
Figure 12. Figure 13.

SUPPLY CURRENT (RMS) DRIVER LOW-LEVEL OUTPUT VOLTAGE

vs vs
SIGNALING RATE LOW-LEVEL OUTPUT CURRENT
50 90
TA = 255C,
45 VCC = 5 V, 80
S at 0 V,
I OL − Low-Level Output Current − mA
I CC − RMS Supply Current − mA

40 RL = 60 W, 70
RXD = 15 pF
35 60

30 50

25 40

20 30

15 20
TA = 255C,
10 10 VCC = 5 V,
S at 0 V,
5 TXD Input is a 125 kHz
0
1% Duty Cycle Pulse
0 −10
200 400 500 600 800 1000 0 1 2 3 4 5
Signaling Rate − kbps VOCANL − Low-Level Output Voltage − V

Figure 14. Figure 15.

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TYPICAL CHARACTERISTICS (continued)

DRIVER HIGH-LEVEL OUTPUT VOLTAGE DRIVER DIFFERENTIAL OUTPUT VOLTAGE

vs vs
HIGH-LEVEL OUTPUT CURRENT FREE-AIR TEMPERATURE (across VCC)
-80 3
TA = 25 C,

Dominant Driver Differential Output Voltage − V

VCC = 5 V,
I OH − High-Level Output Current − mA

-70 S at 0 V, VCC = 5 V VCC = 5.25 V

TXD Input is a 125 kHz 2.5
1% Duty Cycle Pulse
-60

2
-50

VCC = 4.75 V
-40 1.5

-30
1
-20 S at 0 V,
RL = 60 W,
0.5 Air Flow at 7 cf/m,
-10 TXD Input is a 125 kHz
1% Duty Cycle Pulse
-0 0
0 1 2 3 4 5 −40 0 25 70 125
VOCANH − High-Level Output Voltage − V TA − Free-Air Temperature − °C
Figure 16. Figure 17.

DRIVER OUTPUT CURRENT RECEIVER OUTPUT VOLTAGE

vs vs
SUPPLY VOLTAGE DIFFERENTIAL INPUT VOLTAGE
50 6
TA = 255C,
I O − Differential Driver Output Current − mA

45 VCC = 5 V, VIT+ VIT−

S at 0 V, 5
40 RL = 60 W,
VO − Receiver Output Voltage − V

TXD Input is a 125 kHz VCM = 12 V

1% Duty Cycle Pulse 4
35
VCM = 2.5 V
30
3
25 VCM = −12 V
2
20
TA = 255C,
15 VCC = 5 V,
1
S at 0 V,
10 RXD = 15 pF
0
5

0 −1
1
0.60
0.65
0.70
0.75
0.80

0.85

0.85
0.80
0.75
0.70
0.65
0.60

1 2 3 3.5 4 4.5 5 5.25

VCC − Supply Voltage − V
VID − Differential Input Voltage − V
Figure 18. Figure 19.

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TYPICAL CHARACTERISTICS (continued)

TYPICAL ELECTROMAGNETIC EMISSIONS TYPICAL ELECTROMAGNETIC

UP TO 50 MHZ (Peak Amplitude) IMMUNITY PERFORMANCE
80

60
DB mV

dBm
40

20

0
0.1 1 10 100 1000
f − Frequency − MHz

Figure 20. Frequency Spectrum of Common-Mode Figure 21. Direct Power Injection (DPI) Response vs
Emissions Frequency

14 Submit Documentation Feedback Copyright © 2005–2007, Texas Instruments Incorporated

Product Folder Link(s) :SN65HVD1050

 www.ti.com
SN65HVD1050
SLLS632A – DECEMBER 2005 – REVISED MAY 2007

APPLICATION INFORMATION

THERMAL SHUTDOWN
The SN65HVD1050 has a thermal shutdown feature that turns off the driver outputs when the junction
temperature nears 190°C. This shutdown prevents catastrophic failure from bus shorts, but does not protect the
circuit from possible damage. The user should strive to maintain recommended operating conditions and not
exceed absolute-maximum ratings at all times. If an SN65HVD1050 is subjected to many, or long-duration faults
that can put the device into thermal shutdown, it should be replaced.

Copyright © 2005–2007, Texas Instruments Incorporated Submit Documentation Feedback 15

Product Folder Link(s) :SN65HVD1050
 PACKAGE OPTION ADDENDUM
www.ti.com 26-Apr-2007

PACKAGING INFORMATION

Orderable Device Status (1) Package Package Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Type Drawing Qty
SN65HVD1050D ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SN65HVD1050DG4 ACTIVE SOIC D 8 75 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SN65HVD1050DR ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SN65HVD1050DRG4 ACTIVE SOIC D 8 2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.

Addendum-Page 1
 PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 (mm) B0 (mm) K0 (mm) P1 W Pin1
Type Drawing Diameter Width (mm) (mm) Quadrant
(mm) W1 (mm)
SN65HVD1050DR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION
www.ti.com 11-Mar-2008

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
SN65HVD1050DR SOIC D 8 2500 346.0 346.0 29.0

Pack Materials-Page 2
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