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LGBT

The document discusses insulated-gate bipolar transistors (IGBTs). Some key points: 1) IGBTs are voltage-controlled devices that combine characteristics of MOSFETs and bipolar transistors. Applying a positive voltage to the gate biases the base and allows collector-emitter current. 2) IGBTs are used in applications requiring switching speeds up to 100 kHz, replacing bipolar junction transistors in devices like switched power supplies and motor controls. 3) IGBTs have the gate signal characteristics of MOSFETs but can handle high currents like bipolar transistors. When a reverse bias is applied to the gate-source junction, it degrades and throttles the channel.

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92 views2 pages

LGBT

The document discusses insulated-gate bipolar transistors (IGBTs). Some key points: 1) IGBTs are voltage-controlled devices that combine characteristics of MOSFETs and bipolar transistors. Applying a positive voltage to the gate biases the base and allows collector-emitter current. 2) IGBTs are used in applications requiring switching speeds up to 100 kHz, replacing bipolar junction transistors in devices like switched power supplies and motor controls. 3) IGBTs have the gate signal characteristics of MOSFETs but can handle high currents like bipolar transistors. When a reverse bias is applied to the gate-source junction, it degrades and throttles the channel.

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Hernández Pérez Aldo Samuel

1. what meaning lgbt?

R= insulated gate bipolar transistor.

2. What other names does the igbt receive?

R= GEMFET, COMFET (conductivity modulated field effect transistor), IGT (Insulated Gate
Transistor) and Bipolar Mode MOSFET or Bipolar MOS Transistor.

3. How to activate an IGBT?

R= Like a MOSFET, the IGBT is voltage controlled. For the ignition, a positive voltage is given in the
gate with respect to the emitter, the carriers n are attracted to the region p of the gate; thus, the
base of the NPN transistor is forward biased, allowing the circulation of collector-emitter current.
To turn it off, simply remove the voltage from the door. This requires a simple control circuit for
the IGBT transistor.

4. What function do IGBTs have?

R= The IGBT transistor is suitable for switching speeds up to 100 kHz and has replaced the BJT in
many applications. It is used in high and medium energy applications such as switched power
supply, traction control in motors and induction cookers.

5. What is the gate characteristic of an IGBT?

R=This device possesses the gate signal characteristics of field-effect transistors with the high-
current, low-saturation-voltage capability of the bipolar transistor, combining an isolated FET gate
for control input and a bipolar transistor as a switch in a single device. device.

6. What is the difference about a MOSFET and an IGBT?

R= MOSFETs have a positive temperature coefficient, which allows them to stop thermal leakage
or leakage. The IGBT is a cross, a hybrid, between MOSFET and BJT or bipolar transistors that takes
advantage of the benefits of both technologies.

7. what is the most important element of the i-v characteristics?

R=the JFET is a device normally on, which means that when the gate is shorted to the source, the
device is in active state. In contrast, all other power semiconductor devices we have discussed so
far are normally off devices.

8. what about the device normally on?

R= may allow unacceptably large transient current flows at power start system

9. what about the device normally off?

R= a normally powered off device has an integral element of security by being powered off during
system boot.

10. What happens when a reverse bias is applied to the gate-source pn junction?
Hernández Pérez Aldo Samuel

R= the degradation layers increase in width, and at the particular value of vGS, which is called the
throttling voltage Vp, the degradation layers come together in the center of the channel and
throttle it.

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