Silicon N-Channel Power MOSFET

○
R

CS8N65 A0H
General Description： VDSS 650 V
CS8N65 A0H, the silicon N-channel Enhanced ID 8 A
VDMOSFETs, is obtained by the self-aligned planar Technology PD(T C=25℃) 110 W
which reduce the conduction loss, improve switching RDS(ON)Typ 0.9 Ω

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-263,
which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤1.3Ω)
l Low Gate Charge (Typical Data:28nC)

l Low Reverse transfer capacitances(Typical:14pF)

l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 650 V
Continuous Drain Current 8 A
ID
Continuous Drain Current T C = 100 °C 5.5 A
a1
IDM Pulsed Drain Current 32 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 500 mJ
a1
EAR Avalanche Energy ,Repetitive 40 mJ
a1
I AR Avalanche Current 2.8 A
a3
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
Power Dissipation 110 W
PD
Derating Factor above 25°C 0.88 W/℃
TJ ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 650 -- -- V

ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.5 -- V/℃

VDS = 650V, V GS= 0V,
Ta = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =520V, V GS= 0V, µA
Ta = 125℃ -- -- 100

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =4.0A -- 0.9 1.3 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Trans conductance VDS=15V, ID =4A -- 7 -- S
C iss Input Capacitance -- 1240 --
VGS = 0V V DS = 25V
C oss Output Capacitance f = 1.0MHz -- 108 -- pF
C rss Reverse Transfer Capacitance -- 14 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 13 --
tr Rise Time ID =8.0A VDD = 325V -- 15 --
VGS = 10V RG = 9.1Ω ns
td(OFF) Turn-Off Delay Time -- 40 --
tf Fall Time -- 21 --
Qg Total Gate Charge -- 28
ID =8.0A V DD =325V
Qgs Gate to Source Charge VGS = 10V -- 6 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 11 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 8 A
I SM Maximum Pulsed Current (Body Diode) -- -- 32 A
VSD Diode Forward Voltage IS =8.0A,V GS =0V -- -- 1.5 V
trr Reverse Recovery Time IS =8.0A,Tj = 25°C -- 556 -- ns
dIF /dt=100A/us,
Qrr Reverse Recovery Charge V GS=0V -- 3.4 -- uC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θ JC Junction-to-Case 1.14 ℃/W
R θ JA Junction-to-Ambient 62 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10.0mH, ID=10A, Start T J=25℃
a3
：ISD =8A,di/dt ≤100A/us,VDD≤BVDS, Start T J=25℃

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Characteristics Curve：
100 140

120

Pd , Power Dissipation ,Watts

Id , Drain Current , Amps

10
100
100μs
80
1 1ms
10ms 60

OPERATION IN THIS AREA DC 40

0.1
MAY BE LIMITED BY RDS(ON)
TJ=MAX RATED 20
TC=25℃ Single Pulse
0.01 0
1 10 100 1000 10000 0 25 50 75 100 125 150
Vds , Drain-to-Source Voltage , Volts Tc , Case Temperature , C
Figure 1 Maximum Forward Bias Safe Operating Area Figure 2 Maximum Power Dissipation vs Case Temperature
10 14
VGS=10V
12
Id , Drain Current ,Amps

8
Id , Drain Current , Amps

VGS=9V
10
6
8
VGS=8V VGS=7V
4 6

4
2
VGS=6V
2

0 0
50 75 100 125 150 0 25 0 5 10 15 20 25 30 35
Tc , Case Temperature ,C Vds , Drain-to-Source Voltage , Volts
Figure 3 Maximum Continuous Drain Current vs Case Temperature Figure 4 Typical Output Characteristics
1
Thermal Impedance, Normalized

50%

20%

10%
0.1 PDM
5% t1
t2
2%
NOTES：
DUTY FACTOR ：D=t1/ t2
Single pulse 1% PEAK Tj=PDM*ZthJC*RthJC+TC

0.01
0.00001 0.0001 0.001 0.01 0.1 1
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case

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100
Idm , Peak Current , Amps

TRANSCONDUCTANCE MAY LIMIT

CURRENT IN THIS REGION FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
 150 − TC 
I = I 25  
 125 
10

VGS=10V

1
1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
14 4
PULSE DURATION = 10μs
PULSED TEST
DUTY FACTOR = 0.5%MAX
12
Rds(on), Drain to Source ON
Tc =25 ℃
Id , Drain Current ,Amps

VDS=30V
3
Resistance , Ohms

10 ID= 8A

ID= 4A
8
2 ID= 2A
6

4 1

0 0
0 2 4 6 8 10 12 4 6 8 10 12 14
Vgs , Gate to Source Voltage ， Volts Vgs , Gate to Source Voltage ，Volts
Figure 7 Typical Transfer Characteristics Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
1.2 3
PULSED TEST PULSED TEST
Tc =25 ℃ VGS=10V ID=2.5A
2.5
Rds(on), Drain to Source ON
Rds(on), Drain to Source ON

1.1
Resistance, Nomalized
Resistance , Ohms

2
1 VGS=10V

1.5
0.9
1

0.8
0.5

0.7 0
0 1 2 3 4 5 6 -100 -50 0 50 100 150 200
Id , Drain Current , Amps Tj, Junction temperature ,C
Figure 9 Typical Drain to Source ON Resistance Figure 10 Typical Drian to Source on Resistance
vs Drain Current vs Junction Temperature

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1.2
1.15
Vgs(th),Threshold Voltage, Nomalized

Breakdown Voltage, Normalized

1.1 1.1

Bvdss,Drain to Source
1 1.05

0.9 1

0.8 0.95 VGS=0V

VGS=0V ID=250μA
ID=250μA
0.7 0.9
-100 -50 0 50 100 150 200 -75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction temperature , C Tj, Junction temperature , C
Figure 11 Typical Theshold Voltage vs Junction Temperature Figure 12 Typical Breakdown Voltage vs Junction Temperature
2500 15
VGS=0V , f=1MHz
VDS=480V
Vgs , Gate to Source Voltage ,Volts

Ciss=Cgs+Cgd
Coss=Cds+Cgd
2000 12 ID= 8A
Crss=Cgd
Capacitance , pF

1500 9

1000 Coss 6

500 Ciss 3

0 Crss 0
0 10 20 30 40 50 60 0 10 20 30 40 50
Vds , Drain - Source Voltage , Volts Qg , Total Gate Charge , nC
Figure 13 Typical Capacitance vs Drain to Source Voltage Figure 14 Typical Gate Charge vs Gate to Source Voltage
6 100
Isd, Reverse Drain Current , Amps

5 +150℃
STARTING Tj = 25℃
Id , Drain Current , Amps

+25℃
4 10
STARTING Tj = 150℃
-55℃

2 1

1 If R=0: tAV=(L* IAS) / (1.38VDSS-VDD)

VGS=0V If R≠0: tAV=(L/R) In[IAS*R/ (1.38VDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0 0.1
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
Vsd , Source - Drain Voltage , Volts tav , Time in Avalanche , Seconds
Figure 15 Typical Body Diode Transfer Characteristics Figure 16 Unclamped Inductive Switching Capability
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Test Circuit and Waveform

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Package Information：

Values(mm)
Items
MIN MAX
A 9.80 10.40
B 8.90 9.50
C 4.40 4.80
D 1.17 1.37
E 0.70 0.95
F 0.30 0.60
G 1.07 1.47
H 1.30 1.80
K 0.97 1.37
L1 14.50 16.50
L2 1.70 2.30
R 0.4
N 2.39 2.69

TO-263 Package
The name and content of poisonous and harmful material in products

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Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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