MJD32C

100V PNP HIGH VOLTAGE TRANSISTOR IN TO252

Features Mechanical Data

 BVCEO > -100V  Case: TO252 (DPAK)
 IC = -3A high Continuous Collector Current  Case Material: Molded Plastic, "Green" Molding Compound
 ICM = -5A Peak Pulse Current UL Flammability Classification Rating 94V-0
 Ideal for Power Switching or Amplification Applications  Moisture Sensitivity: Level 1 per J-STD-020
 Complementary NPN Type: MJD31C  Terminals: Finish – Matte Tin Plated Leads, Solderable per
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) MIL-STD-202, Method 208
 Halogen and Antimony Free. “Green” Device (Note 3)  Weight: 0.34 grams (Approximate)
 Qualified to AEC-Q101 Standards for High Reliability

TO252 (DPAK) C

E
Top View Device Schematic Pin Out Configuration
Top View

Ordering Information (Note 4)

Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MJD32C-13 AEC-Q101 MJD32C 13 16 2,500
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

MJD32C = Product Type Marking Code

= Manufacturers’ code marking
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 17 = 2017)
WW = Week Code (01 - 53)

MJD32C 1 of 7 January 2018

Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 MJD32C

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -6 V
Continuous Collector Current IC -3 A
Peak Pulse Collector Current ICM -5 A
Continuous Base Current IB -1 A
Power Dissipation PD 15 W

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
(Note 5) 3.9
Power Dissipation (Note 6) PD 2.1 W
(Note 7) 1.6
(Note 5) 32
Thermal Resistance, Junction to Ambient Air (Note 6) RθJA 59
C/W
(Note 7) 80
Thermal Resistance, Junction to Leads (Note 8) RθJL 3.6
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C

ESD Ratings (Note 9)

Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in a steady-state.
6. Same as note (5), except mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (on the exposed collector pad).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

MJD32C 2 of 7 January 2018

Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 MJD32C

Thermal Characteristics

10 10
VCE(sat)
VCE(sat)
-IC Collector Current (A)

-IC Collector Current (A)

Limited
Limited
1 DC DC
1
1s 100ms
100ms 10ms
10ms 1ms
100m 1ms 0.1 100s
100µs
Single Pulse Single Pulse
T amb=25°C T CASE=25°C
10m 0.01
100m 1 10 100 0.1 1 10 100
-VCE Collector-Emitter Voltage (V) -VCE Collector-Emitter Voltage (V)
Safe Operating Area Safe Operating Area

8
Thermal Resistance (°C/W)

T AMB=25°C Thermal Resistance (°C/W)

80
Minimum Copper
6
60 D=0.5
D=0.5
4 D=0.2
40

D=0.2 D=0.1
Single Pulse 2
20 D=0.05
D=0.05
Single Pulse
T CASE=25°C
D=0.1
0 0
100µ 1m 10m 100m 1 10 100 1k 100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s) Pulse Width (s)
Transient Thermal Impedance Transient Thermal Impedance

MJD32C 3 of 7 January 2018

Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 MJD32C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Emitter Breakdown Voltage (Note 10) BVCEO -100   V IC = -30mA, IB = 0
Collector Cut-off Current ICEO   -1 μA VCB = -60V, IB = 0
Collector Cut-off Current ICES   -1 μA VCE = -100V, VEB = 0
Emitter Cut-off Current IEBO   -1 μA VEB = -5V, IC = 0
Collector-Emitter Saturation Voltage (Note 10) VCE(sat)   -1.2 V IC = -3.0A, IB = -375mA
Base-Emitter Turn-On Voltage (Note 10) VBE(on)   -1.8 V IC = -3A, VCE = -4V
25  VCE = -4V, IC = -1A
DC Current Gain (Note 10) hFE  
10 50 VCE = -4V, IC = -3A
Current Signal Current Gain Hfe 20    VCE = -10V, IC = -0.5A, f = 1KHz
Current Gain-Bandwidth Product fT 3.0   MHz IC = -500mA, VCE = -10V, f = 1MHz
Note: 10. Measured under pulsed conditions. Pulse width  300μs. Duty cycle 2%.

MJD32C 4 of 7 January 2018

Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 MJD32C

Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

1,000 1
VCE = -4V IC/IB = 8

-VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
TA = 150°C
hFE, DC CURRENT GAIN

T A = 150°C
T A = 85°C 0.1
T A = 85°C
T A = 25°C
TA = 25°C
100
T A = -55°C TA = -55°C

0.01

10 0.001
1 10 100 1,000 10,000 1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)
Figure 1 Typical DC Current Gain vs. Collector Current Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current

1.4 -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) 1.2

-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)

IC/IB = 8

1.2 VCE = -4V

1.0

1.0
0.8
TA = -55°C
0.8
TA = -55°C 0.6
TA = 25°C
0.6
TA = 25°C
TA = 85°C
0.4
0.4 TA = 85°C
TA = 150°C

TA = 150°C
0.2
0.2

0 0
1 10 100 1,000 10,000 1 10 100 1,000 10,000
-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)
Figure 3 Typical Base-Emitter Turn-On Voltage Figure 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current vs. Collector Current

1,000
f = 1MHz
CAPACITANCE (pF)

Cibo
100

Cobo

10
0.1 1 10 100
VR, REVERSE VOLTAGE (V)
Figure 5 Typical Capacitance Characteristics

MJD32C 5 of 7 January 2018

Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 MJD32C

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

E
A
b3 TO252 (DPAK)
7°±1°
c Dim Min Max Typ
L3 A 2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
b 0.64 0.88 0.783
D
A2 b2 0.76 1.14 0.95
H
L4 b3 5.21 5.46 5.33
c 0.45 0.58 0.531
D 6.00 6.20 6.10
D1 5.21 - -
e - - 2.286
e E 6.45 6.70 6.58
b(3x) E1 4.32 - -
b2(2x) H 9.40 10.41 9.91
0.508
L 1.40 1.78 1.59
Gauge Plane L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
D1
a 0° 10° -
E1 Seating Plane
All Dimensions in mm
L
a

A1
2.74REF

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

X1

Dimensions Value (in mm)

C 4.572
Y1 X 1.060
X1 5.632
Y 2.600
Y2 Y1 5.700
Y2 10.700
C

Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.

MJD32C 6 of 7 January 2018

Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated
 MJD32C

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
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final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

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labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2017, Diodes Incorporated

www.diodes.com

MJD32C 7 of 7 January 2018

Document number: DS31624 Rev. 8 - 2 www.diodes.com © Diodes Incorporated