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EIE101R01: Basic Textbook and Materials

Electronics Mehta V. K. and Rohith Mehta, Principles of

Electronics, 11th edition, S. Chand and company,
2008
Engineering Power Point Presentation

Dr. K. Adalarasu
Email id : [email protected]

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References References
Jacob Millman, Christos Halkias and Chetan Edward Hughes, Electrical and Electronic
D. Parikh, Integrated Electronics Analog and Technology, 10th edition, Pearson, 2008.
Digital circuits and systems, 2nd edition,
McGraw Hill Education, 2011. Kalsi H.S., Electronic Instrumentation, 3rd
edition, Tata McGraw Hill, 2010.
S.K. Bhattacharya, Basic Electrical and
Electronics Engineering, 1st edition, Pearson, B.L. Theraja, Dr. R.S. Sedha, Principles of
2011. Electronic Devices and Circuits, 5th edition, S.
Chand and company, 2005.
Salivahanan S, Suresh Kumar N, and
Vallavaraj A, Electronic Devices and Circuits,
2nd edition, Tata McGraw Hill, 2008.
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Zener Diode
 Diode with a very sharp breakdown voltage is called
zener diode
 Heavy doped than normal diode
Zener Diode  Breakdown region is the knee of the reverse
characteristic
 Breakdown or zener voltage depends upon the
amount of doping
 Diode is heavily doped
 Depletion layer will be thin
 Consequently the breakdown of the junction will occur at a
lower reverse voltage

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Zener Diode
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Zener Diode
 Lightly doped diode has a higher breakdown  Zener Breakdown – electric field
voltage  Increase current taken at constant value of RB below 6 V
 Two ways that breakdown of a zener diode may for heavily doped diode
occur  Depletion region width becomes very small and for an
applied voltage of 6 V /less
 Zener breakdown
 Field across the depletion very high – 107 V/m
 Avalanche breakdown
 Avalanche breakdown
 Zener Breakdown – electric field
 Applied RB voltage increase
 Heavily doped – direct rupture of covalent bonds take
place  Field across the junction increase
 Because of the strong electric field at PN junction  Large amount of kinetic energy
 New electron-holes create a increase reverse current  Velocity of carrier increase
in RB PN diode  Electron disrupt covalent bonds (colliding with immobile
ions)
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Zener Diode Zener Diode
 Avalanche breakdown  Zener diode is always reverse connected i.e. it is
 Create new electron-holes pairs always reverse biased
 This new energy collide with other immobile ion thereby  Zener diode has sharp breakdown voltage, called
generating further electron-holes pair zener voltage VZ
 Process is cumulating in nature  When forward biased, its characteristics are just
 Generation of avalanche of charge carrier with in a short those of ordinary diode
time
 Zener diode is not immediately burnt
 This mechanism is called avalanche

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V–I Characteristics - Zener Diode

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V–I Characteristics - Zener Diode
 Operation of Zener diode is same as that of  Resistance R is connected to limit the current beyond the
ordinary PN diode under FB condition normal current-carrying capacity
 RB condition, breakdown of the junction occurs  Constant voltage, V will be available across the zener diode,
even if the input voltage changes
 Breakdown voltage depends upon the amount of
doping
 Diode is heavily doped
 Depletion layer will be thin
 Consequently, breakdown occurs at lower reverse Symbol of a zener diode
voltage
 Breakdown voltage is sharp

zener diode circuit

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V–I Characteristics - Zener Diode

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Zener Diode 14

 Zener resistance
 Dynamic resistance of the zener diode somewhat below
the knee point on the reverse V–I characteristic

VZ
RZ 
I Z

 Application of zener diode as a voltage regulator or

stabilizer

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Voltage Regulator
 Voltage regulator maintains nearly constant voltage output
across the load over a wide range of variation of load current
 Maintains a constant voltage across the load terminals A and

Voltage Regulator B

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Voltage Regulator
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Voltage Regulator
 Function of the zener diode  Series resistance R absorbs the output voltage fluctuations so
 To maintain the output voltage more or less constant even as to maintain constant voltage across the load
if the load current changes  Zener will maintain a constant voltage VZ (= E0) across the
 Operating the zener diode in the breakdown region when load so long as the input voltage does not fall below VZ
voltage across it changes only very slightly over a wide
variation of zener current
 Zener breakdown voltage has to be lower than the applied
voltage, V

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Voltage Regulator Problem 1
 Voltage drop across R = Ei – E0  A 10-V zener diode is used to regulate the voltage across a
variable load resistor [See fig]. The input voltage varies
 Current through R, I = IZ + IL between 13 V and 16 V and the load current varies between 10
 R =(Ei – E0)/ IZ(min) + IL(max) mA and 85 mA. The minimum zener current is 15 mA.
Calculate the value of series resistance R.

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Problem 2 Problem 2
 For the circuit shown in Fig. (i), find :
 (i) the output voltage
 (ii) the voltage drop across series resistance
 (iii) the current through zener diode.

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Problem 2 Problem 3
 For the circuit shown in Fig., find the maximum and minimum
values of zener diode current.

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