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EIE 101R01: Basic Electronics 2

EIE101R01: Basic Engineering LTPC

Electronics
2023

 Unit –I: Semiconductor Diode

 P-N junction: Construction – working – characteristics

Engineering  Zener diode: Working – characteristics

 Rectifiers: Half-wave rectifier – full-wave rectifier – center-
tapped and bridge rectifiers – Clipper: Positive clipper –
negative clipper – biased clipper – Clamper
 Logic gates using diodes (AND/OR gates)
 Zener diode as voltage regulator
 Light Emitting Diode (LED) - Photodiode
Dr. K. Adalarasu
Email id : [email protected]

KA – BEE – Unit I – April 2021, Sastra Deemed University KA – BEE – Unit I – April 2021, Sastra Deemed University

EIE 101R01: Basic Electronics 3

EIE 101R01: Basic Electronics
4

Engineering Engineering
Unit – II: Bipolar Junction Transistor Unit – III : Field Effect Transistor
BJT: Construction – working of PNP/NPN – input JFET: Construction – working – drain and transfer
and output characteristics characteristics
Common emitter configuration – common base Depletion mode MOSFET: Construction –
configuration – common collector configuration working – characteristics
DC load line – Q-Point (fixed bias only) Enhancement mode MOSFET: Construction –
Transistor as an amplifier and switch working – characteristics
MOSFET as a switch – CMOS as an inverter

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EIE 101R01: Basic Electronics 5

Basic Electronics Engineering
6

Engineering
Course Objectives
Unit – IV : Power Supply and Measuring
Instruments To familiarize the fundamental concepts of
electronic devices like semiconductor
Basic building blocks of regulated power supply,
Series and shunt voltage regulator using diodes, BJT, JFET and MOSFET
Transistor. To design a regulated power supply unit to
Permanent Magnet Moving Coil (PMMC) – Basic power various circuits
DC voltmeter and DC ammeter To introduce the basic concepts of
Oscilloscope: Block diagram – Measurement of measuring devices and its measurements
voltage, current, phase and frequency using CRO
– Digital Storage Oscilloscope: Block diagram

KA – BEE – Unit I – April 2021, Sastra Deemed University KA – BEE – Unit I – April 2021, Sastra Deemed University

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Basic Electronics Engineering Textbook and Materials
Course Learning Outcomes
Mehta V. K. and Rohith Mehta, Principles of
Infer the characteristics of semiconductor Electronics, 11th edition, S. Chand and company,
devices and use them for different 2008
applications Power Point Presentation
Design a voltage regulator using Zener
diode
Make use of CRO to measure various
electrical parameters

KA – BEE – Unit I – April 2021, Sastra Deemed University KA – BEE – Unit I – April 2021, Sastra Deemed University

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References References
 Jacob Millman, Christos Halkias and Chetan D.
Parikh, Integrated Electronics Analog and Digital Edward Hughes, Electrical and Electronic
circuits and systems, 2nd edition, McGraw Hill Technology, 10th edition, Pearson, 2008.
Education, 2011. Kalsi H.S., Electronic Instrumentation, 3rd
 S.K. Bhattacharya, Basic Electrical and Electronics edition, Tata McGraw Hill, 2010.
Engineering, 1st edition, Pearson, 2011.
B.L. Theraja, Dr. R.S. Sedha, Principles of
 Salivahanan S, Suresh Kumar N, and Vallavaraj A,
Electronic Devices and Circuits, 2nd edition, Tata
Electronic Devices and Circuits, 5th edition, S.
McGraw Hill, 2008. Chand and company, 2005.
 Mehta, V.K. & Rohith Mehta. Principles of
Electronics. 3rd Edition, S Chand and Company.
2005.
KA – BEE – Unit I – April 2021, Sastra Deemed University KA – BEE – Unit I – April 2021, Sastra Deemed University

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Electronics
An electron device
Electrons flow through a vaccum or gas or
semiconductor

Basic Electronics Electronics has a wide range of applications

Rectifications
Amplifications
Power generation
Industrial control
Photo-electricity and communications etc

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Electronics Semiconductor Theory
Electronic industry Depending on their conductivity,
Consumer electronics materials can be classified
Control and industrial electronics Conductors
Communication and broadcasting equipment's Good conductor of electricity
Bio-medical equipment's Insulators
Calculators Poor conductor of electricity
Computers Semiconductors
Microprocessors Its conductivity lying between these two
Aerospace and defence equipment's and extremes
components

KA – BEE – Unit I – April 2021, Sastra Deemed University KA – BEE – Unit I – April 2021, Sastra Deemed University

Semiconductor Theory
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Semiconductor Theory
 Materials can be classified
 Depending on the number of valence electrons in the atom
 Valence electrons
 Electrons in the outermost orbit of an atom
 Good conductor
 Number of valence electrons will be 1 or 2, (e.g. copper) A
 Insulator B
 Outermost orbit will be completely filled (e.g. xenon)
 Semiconductor
 Outermost orbit will be partially filled C
 For example, the number of valence electrons is 4 in Germanium
(Ge) and Silicon (Si)

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Semiconductor Theory Semiconductor Theory
 Semiconductor Classifications of
 At low temperatures, the valence band is completely filled Semiconductors
and the conduction band is completely empty
Intrinsic
 Semiconductor virtually behaves as an insulator at low
Semiconductor
temperature
 Pure semiconductor
 As temperature increases is called intrinsic
semiconductor
 Number of electrons crossing over to the conduction band
increases Extrinsic
 Hence electrical conductivity increases Semiconductor
 Hence a semiconductor has negative temperature  Due to the poor
coefficient of resistance conduction at room
temperature

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Semiconductor Theory N-type Semiconductor
 Intrinsic semiconductor, as such, is not useful in the  Small amount of
electronic devices pentavalent impurities
 Current conduction capability of the intrinsic such as
semiconductor should be increased  Arsenic
 Can be achieved by adding a small amount of impurity to  Antimony or phosphorus
the intrinsic semiconductor  Added to the pure
 It becomes impurity semiconductor or extrinsic semiconductor (germanium
semiconductor or silicon crystal) to get N-
 Process of adding impurity is known as doping type semiconductor
 Amount of impurity added is extremely small, say 1  Germanium atom has four
to 2 atoms of impurity for 106 intrinsic atoms valence electrons and
antimony has five valence
electrons

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N-type Semiconductor N-type Semiconductor
 Each antimony atom forms a covalent bond with  Donor atoms create free electrons which form the
surrounding four germanium atoms majority charge carrier (responsible for current flow)
 Fifth valence electron is left free which is loosely in an n-type material
bound to the antimony atom  Temperature rise above absolute zero also creates
 Loosely bound electron can be easily excited from free electrons and holes
the valence band to the conduction band by the  Due to breaking of covalent bonds
application of electric field or increasing the thermal  Thus increasing the total number of free electrons
energy  Electrons leave their positions creating holes
 Pentavalent impurities are called donor impurities  Movement of electrons gets associated with the movement
 Because it donates one electron for conduction of hole

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N-type Semiconductor P-type Semiconductor
Majority charge carriers are the electrons P - type
A small amount of
Minority charge carriers are thermally
trivalent impurities such
generated holes as
Aluminium or
Boron is added
Germanium (Ge) atom
has four valence
electrons and boron
has three valence
electrons
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P-type Semiconductor P-type Semiconductor
 Three valence electrons in boron form covalent  p-type material will have plenty of holes and an n-
bond with four surrounding atoms of Ge type material will have plenty of free electrons
 Leaving one bond incomplete  p-type material the holes are the majority charge
 Gives rise to a hole carriers
 Introduces a large number of holes in the valence  Thermally generated electrons will be the minority
band charge carriers
 Positively charged holes increase the conductivity of  Because of their being small in numbers
P-type semiconductor
 Trivalent impurities such as boron is called acceptor
impurity
 Because it accepts free electrons in the place of holes

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p–n Junction
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 PN junction
 If one half is doped by P-
type impurity
 Other half is doped by N-

p–n Junction type impurity

 N-type material has high
concentration of free
electrons
 P-type material has high
concentration of holes

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p–n Junction
 When an electron moves out of an atom, the atom
becomes a positively charged ion which is immobile,
i.e., unable to move.
 Addition of an electron in a hole makes an atom a
negatively charged immobile ion
 p–n junction there will be a tendency of the free
electrons from the n-type material to diffuse (move
from a high concertation area to a low concertation
area) into the p-side and combine with a hole nearest
to the junction

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p–n Junction
 Free electron crossing over from the n-side to the
p-side
 Will leave behind positive immobile ions on the n-side of
the junction
 Electrons crossing over the junction will occupy the
holes in the p-type material making the atoms
negatively charged immobile ions

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p–n Junction p–n Junction
 One side of the junction there is an accumulation of
negative ions
 Other side there is accumulation of positive ions
 Negative ions created on the p-side close to the
junction will acquire a negative voltage
 Positive ions created on the n-side close to the
junction will acquire a positive voltage
 Negative voltage on the p-side will repel further
diffusion of electrons from the n-side
 Positive voltage on the n-side will repel diffusion of
holes from the p-side
https://www.pinterest.ca/pin/817895982317139671/

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p–n Junction
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p–n Junction
 When a p–n junction is made there is an initial
diffusion of electrons and holes which creates a
barrier voltage at the junction
 Which stops any further diffusion of charge carriers
 Formed during the manufacturing process
 Barrier voltage depends upon
 Amount of doping
 Charge carriers
https://www.circuitbread.co  Junction temperature
m/tutorials/how-does-a-
diode-work-part-1-the-pn-
junction

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p–n Junction p–n Junction
 Germanium
 Application of some voltage across the p–n
 Barrier voltage is 0.3 V
junction is called biasing
 Silicon
 Depending on the polarity of biasing the width of
 Barrier voltage is 0.7 V at room temperature (25°C)
the depletion layer will change
 Depletion region
 Layer is very thin, of the order of micrometer
 Equally divided on both sides of the p–n junction
 Because both the p-type and the n-type materials have been
equally doped
 If the doping is different, the width of the depletion
region on the two sides will be different

KA – BEE – Unit I – April 2021, Sastra Deemed University KA – BEE – Unit I – April 2021, Sastra Deemed University

Biasing of p–n Junction

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Application of some external voltage across

the two sides of the p–n
Biasing of p–n Forward-biased junction
p-side is connected to the positive terminal of a
Junction battery
n-side is connected to the negative terminal
Reverse-biased junction
Positive terminal of the battery is connected to
the n-side
Negative terminal on the p-side

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Forward-biased p–n Junction
 Holes on the p-side are positively charged
 Electrons on the n-side are negatively charged

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Forward-biased p–n Junction

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 Positive terminal of the battery will repel the holes

from the terminal
 Electrons on the n-side will be repelled from the
negative terminal of the battery
 Width of the depletion layer will be reduced
 Potential barrier will also get reduced

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Forward-biased p–n Junction Forward-biased p–n Junction
 If the applied voltage is gradually increased  Resistance R
 Depletion region and barrier potential will disappear  To limit the current flowing in the circuit
 When the switch S is closed
 Forward voltage gets applied
 When the voltage is gradually increased from zero voltage
to 0.3 V
 Germanium semiconductor the barrier voltage is overcome
 Depletion layer disappears
 Electrons from the n-side are attracted by the positive
terminal A of the p-side
 Holes from the p-side get attracted by the negative
terminal B of the n-side

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Forward-biased p–n Junction Reverse-biased p–n Junction
 Majority charge carriers start moving across the p–n
junction establishing a forward current, IF to flow  Battery connection is reversed, i.e.,
 Forward (IF) current is high (mA)  Negative terminal of the battery is connected to the p-
 Ideal diode resistance (Rd) – zero side
 Practical diode resistance (Rd) – low  Positive terminal is connected to the n-side of the p–n
 Diode act as a – Short circuit junction

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Reverse-biased p–n Junction
 Electrons from the n-side are attracted to the
positive terminal of the battery
 Holes from the p-side get attracted to the negative
terminal of the battery
 Applied voltage is gradually increased
 Depletion layer gets widened
 Barrier voltage also gets gradually increased
 Majority charge carriers crossing the barrier is reduced to
zero
 Due to minority charge carriers a negligibly small
current of the order of micro amperes will flow

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Reverse-biased p–n Junction Forward-biased p–n Junction
 Very high resistance
 Ir – Low – µA
 Ideal diode resistance
(Rd) – infinite
 Practical diode
resistance (Rd) – high
 Diode act as open
circuit
 Very small amount of
reverse current is also
referred to as reverse
saturation current https://instrumentationtools.com/forward-bias-reverse-bias-diode-working-
animation/
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Reverse-biased p–n Junction

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Semiconductor Diode
 Simply a p–n junction which offers
 Very low resistance when forward biased
 Very high resistance when reverse biased
 Diodes are available in different current ratings

https://instrumentationtools.com/forward-bias-reverse-bias-diode-working-
animation/
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Semiconductor Diode
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Semiconductor Diode
 Very high forward current or a very high reverse Ideal diode
voltage can destroy a diode Will have zero forward resistance and infinite
reverse resistance

B
Approximate V–I characteristics equivalent circuit

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V-I Characteristic of a Diode
 Relationship between the voltage applied and current flowing
will give us a forward V–I characteristic

Volt–ampere (V-I)  Applied voltage is gradually increased

 At a small value of forward voltage the forward current is negligible

Characteristic of a
small
 At a voltage near 0.3 V, the current suddenly increases.

Diode

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V-I Characteristic of a Diode V-I Characteristic of a Diode
 Cut-in voltage  Breakdown voltage
 Voltage at which the forward current starts increasing  Reverse voltage at which the diode breaks down
 A large reverse current starts flowing
 Reverse characteristic - Reverse-biased condition
 Junction resistance is very high and ideally no current
should flow
 But due to minority charge carriers, a negligibly small
current of the order of microamperes will flow
 Also called leakage current of the diode
 If the reverse voltage is increased to a large value,
at one stage
 p–n junction will break down with a sudden rise in reverse
current

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Problem 1
 A silicon diode is connected across a 3 V supply with a series
resistance of 20 Ω. Neglecting diode resistance, calculate the
diode current.

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Problem 1 63
Problem 1-1
64

 For the diode circuits of Fig. find the value of I

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Problem 2
 An AC voltage of peak value 20 V is connected in series with
a silicon diode and load resistance of 500 Ω. If the forward
resistance of diode is 10 Ω, find :
 (i) peak current through diode
 (ii) peak output voltage
 What will be these values if the diode is assumed to be ideal
?

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Problem 3
Problem 2  Calculate the current through 48 Ω resistor in the
circuit shown in Fig. Assume the diodes to be of
silicon and forward resistance of each diode is 1 Ω

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Problem 4
 Determine the current I in the circuit shown in Fig.
Assume the diodes to be of silicon and forward
resistance of diodes to be zero.

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Problem 4

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Problem 5 Problem 5
 For the diode circuits of Fig. determine V0 and ID

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Diode Parameters and Diode Ratings Diode Parameters and Diode Ratings
 Dynamic resistance
Forward Voltage drop, VF  Slope of the forward V–I characteristic
Reverse Breakdown Voltage, VRB VF
rd  
I F
Reverse saturation current, IR  Diodes are available in low, medium, and high
Dynamic resistance, rd current ratings
Maximum forward current, IFM

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