Freescale Semiconductor Document Number: MRFE6VP5150N

Technical Data Rev. 1, 7/2014

RF Power LDMOS Transistors

High Ruggedness N--Channel MRFE6VP5150NR1
Enhancement--Mode Lateral MOSFETs MRFE6VP5150GNR1
These high ruggedness devices are designed for use in high VSWR
industrial (including laser and plasma exciters), broadcast (analog and digital),
aerospace and radio/land mobile applications. They are unmatched input and 1.8–600 MHz, 150 W CW, 50 V
output designs allowing wide frequency range utilization, between 1.8 and WIDEBAND
600 MHz. RF POWER LDMOS TRANSISTORS
Typical Performance: VDD = 50 Vdc
Frequency Pout Gps D
(MHz) Signal Type (W) (dB) (%)
TO--270WB--4
87.5–108 (1,3) CW 179 22.5 74.6
PLASTIC
230 (2) CW 150 26.3 72.0 MRFE6VP5150NR1
230 (2) Pulse 150 Peak 26.1 70.3
(100 sec, 20%
Duty Cycle)
Load Mismatch/Ruggedness
TO--270WBG--4
Frequency Pin Test
Signal Type VSWR PLASTIC
(MHz) (W) Voltage Result
MRFE6VP5150GNR1
98 (1) CW > 65:1 3.0 50 No Device
at all Phase (3 dB Degradation
Angles Overdrive)
230 (2) Pulse 0.62 Peak
(100 sec, 20% (3 dB
Duty Cycle) Overdrive)
Gate A 3 2 Drain A
1. Measured in 87.5–108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range. Gate B 4 1 Drain B

Features
 Wide Operating Frequency Range (Top View)
 Extreme Ruggedness
Note: Exposed backside of the package is
 Unmatched Input and Output Allowing Wide Frequency Range Utilization the source terminal for the transistors.
 Integrated Stability Enhancements
Figure 1. Pin Connections
 Low Thermal Resistance
 Integrated ESD Protection Circuitry
 In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.

 Freescale Semiconductor, Inc., 2014. All rights reserved. MRFE6VP5150NR1 MRFE6VP5150GNR1

RF Device Data
Freescale Semiconductor, Inc. 1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +133 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC –40 to +150 C
Operating Junction Temperature Range (1,2) TJ –40 to +225 C
Total Device Dissipation @ TC = 25C PD 952 W
Derate above 25C 4.76 W/C

Table 2. Thermal Characteristics

Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case RJC 0.21 C/W
CW: Case Temperature 80C, 150 W CW, 50 Vdc, IDQ(A+B) = 100 mA, 230 MHz
Thermal Impedance, Junction to Case ZJC 0.04 C/W
Pulse: Case Temperature 66C, 150 W Peak, 100 sec Pulse Width,
20% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 230 MHz

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) B, passes 250 V
Charge Device Model (per JESD22--C101) IV, passes 1200 V

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C

Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)

Gate--Source Leakage Current IGSS — — 1 Adc

(VGS = 5 Vdc, VDS = 0 Vdc)

Drain--Source Breakdown Voltage V(BR)DSS 133 139 — Vdc

(VGS = 0 Vdc, ID = 50 mAdc)
Zero Gate Voltage Drain Leakage Current IDSS — — 5 Adc
(VDS = 50 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current IDSS — — 10 Adc

(VDS = 100 Vdc, VGS = 0 Vdc)

On Characteristics
Gate Threshold Voltage (4) VGS(th) 1.8 2.4 2.8 Vdc
(VDS = 10 Vdc, ID = 480 Adc)
Gate Quiescent Voltage VGS(Q) 2.3 2.8 3.3 Vdc
(VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test)

Drain--Source On--Voltage (4) VDS(on) — 0.26 — Vdc

(VGS = 10 Vdc, ID = 1 Adc)

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
2 Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics (1)
Reverse Transfer Capacitance Crss — 0.8 — pF
(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Output Capacitance Coss — 45.4 — pF

(VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Input Capacitance Ciss — 96.7 — pF
(VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz)

Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 150 W Peak (30 W Avg.),
f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain Gps 25.0 26.1 27.5 dB
Drain Efficiency D 68.0 70.3 — %
Input Return Loss IRL — –16 –9 dB

Load Mismatch/Ruggedness (In Freescale Test Fixture) 50 ohm system, IDQ(A+B) = 100 mA
Frequency Pin
(MHz) Signal Type VSWR (W) Test Voltage, VDD Result
230 Pulse > 65:1 0.62 Peak 50 No Device Degradation
(100 sec, 20% Duty Cycle) at all Phase Angles (3 dB Overdrive)
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc. 3
 TYPICAL CHARACTERISTICS

300 1.06
Ciss 1.05 300 mA VDD = 50 Vdc
100 1.04 IDQ(A+B) = 100 mA
1.03
Coss

NORMALIZED VGS(Q)
800 mA
C, CAPACITANCE (pF)

1.02
10 1.01
1300 mA
1
0.99

Crss 0.98
1
0.97

Measured with 30 mV(rms)ac @ 1 MHz 0.96

VGS = 0 Vdc 0.95
0.1 0.94
0 10 20 30 40 50 --50 --25 0 25 50 75 100
VDS, DRAIN--SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (C)
Note: Each side of device measured separately. IDQ (mA) Slope (mV/C)
Figure 2. Capacitance versus Drain--Source Voltage 100 –2.466
300 –2.058
800 –2.015
1300 –1.877

Figure 3. Normalized VGS versus Quiescent

Current and Case Temperature

108

VDD = 50 Vdc
ID = 3.36 Amps
107
MTTF (HOURS)

106 4.14 Amps

4.97 Amps

105

104
90 110 130 150 170 190 210 230 250
TJ, JUNCTION TEMPERATURE (C)
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.

Figure 4. MTTF versus Junction Temperature -- CW

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
4 Freescale Semiconductor, Inc.
 230 MHz NARROWBAND PRODUCTION TEST FIXTURE

C3 C5

MRFE6VP5150N C27 C29

B1 C7 Rev. 2 C21 C23

C1 D57619
C25
L1 C12 COAX3
COAX1 L3

C16
C9 C14

C10 C18
C20

CUT OUT AREA

C11 C19
C31
C15
C17

COAX2 C13 L4 COAX4

L2
C26
C2

B2 C22 C24
C8
C28 C30
C4 C6

Figure 5. MRFE6VP5150NR1 Narrowband Test Circuit Component Layout — 230 MHz

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc. 5
 230 MHz NARROWBAND PRODUCTION TEST FIXTURE

Table 6. MRFE6VP5150NR1 Narrowband Test Circuit Component Designations and Values — 230 MHz
Part Description Part Number Manufacturer
B1, B2 Small Ferrite Beads, Surface Mount 2743019447 Fair-Rite
C1, C2 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C3, C4, C23, C24 0.1 F Chip Capacitors CDR33BX104AKWS AVX
C5, C6 220 nF Chip Capacitors C1812C224K5RACTU Kemet
C7, C8 2.2 F Chip Capacitors C1825C225J5RACTU Kemet
C9 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C10, C11 18 pF Chip Capacitors ATC100B180JT500XT ATC
C12, C13 330 pF Chip Capacitors ATC100B331JT200XT ATC
C14, C15 39 pF Chip Capacitors ATC100B390JT500XT ATC
C16, C17 15 pF Chip Capacitors ATC100B150JT500XT ATC
C18, C19 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C20 82 pF Chip Capacitor ATC100B820JT500XT ATC
C21, C22 0.10 F Chip Capacitors C1812F104K1RACTU Kemet
C25, C26 2.2 F Chip Capacitors 2225X7R225KT3AB ATC
C27, C28, C29, C30 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
C31 36 pF Chip Capacitor ATC100B360JT500XT ATC
Coax1, 2, 3, 4 25  SemiRigid Coax, 2.4 UT-141C-25 Micro-Coax
L1, L2 3 Turns, 12 nH Inductors GA3094-ALC Coilcraft
L3, L4 4 Turns, 17.5 nH Inductors GA3095-ALC Coilcraft
PCB Arlon AD255A, 0.030, r = 2.55 D57619 MTL

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
6 Freescale Semiconductor, Inc.
 B1 VDD
+ +
VGG L3
+ C21 C23 C25 C27 C29
C1 C3 C5 C7
L1 Z22
Z20 C16

RF Device Data
Z12 C12
Z18
COAX1 Z10 C14 COAX3

Z16 Z24 Z26 Z28

Freescale Semiconductor, Inc.

Z8

Z2 Z4 Z6 Z14 C18
RF RF
INPUT C10 OUTPUT
Z1 Z30 Z31
C9 DUT C20
Z3 Z5 Z7 Z15
C31
C11 Z17 Z25 Z27 Z29
Z9
C15 C19
Z11 C13 COAX4
COAX2
Z19
C17
Z13
Z21
L2
Z23
B2
VGG L4
+
C2 C4 C6 C8 VDD
+ +
C22 C24 C26 C28 C30

Figure 6. MRFE6VP5150NR1 Narrowband Test Circuit Schematic — 230 MHz

Table 7. MRFE6VP5150NR1 Narrowband Test Circuit Microstrips — 230 MHz

Microstrip Description Microstrip Description Microstrip Description
Z1 0.366  0.082 Microstrip Z12, Z13 0.210  0.068 Microstrip Z24, Z25 1.090  0.230 Microstrip
Z2, Z3 0.690  0.120 Microstrip Z14, Z15 0.439  0.746 Microstrip Z26, Z27 0.093  0.230 Microstrip
Z4, Z5 0.134  0.120 Microstrip Z16, Z17 0.289  0.393 Microstrip Z28, Z29 0.144  0.230 Microstrip
Z6, Z7 0.395  0.120 Microstrip Z18, Z19 0.112  0.289 Microstrip Z30 0.262  0.082 Microstrip
Z8*, Z9* 0.125  0.058 Microstrip Z20, Z21 0.422  0.150 Microstrip Z31 0.102  0.082 Microstrip
Z10, Z11 0.450  0.058 Microstrip Z22, Z23 0.400  0.150 Microstrip * Line length include microstrip bends

7
MRFE6VP5150NR1 MRFE6VP5150GNR1
 TYPICAL CHARACTERISTICS — 230 MHz
180
160 VDD = 50 Vdc, f = 230 MHz

Pout, OUTPUT POWER (WATTS) PEAK

Pulse Width = 100 sec, 20% Duty Cycle
140
120

100
Pin = 0.34 W
80

60
Pin = 0.17 W
40

20
0
0 0.5 1 1.5 2 2.5 3 3.5
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. Output Power versus Gate--Source
Voltage at a Constant Input Power
54 31 90
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz
52
30 Pulse Width = 100 sec, 20% Duty Cycle 80
Pout, OUTPUT POWER (dBm) PEAK

50 D

D, DRAIN EFFICIENCY (%)

29 70
48 Gps, POWER GAIN (dB) IDQ(A+B) = 900 mA

46 28 60
600 mA
44 27 300 mA 50
42
26 40
40 100 mA 900 mA
25 600 mA 30
38 300 mA
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz 24 Gps 20
36 100 mA
Pulse Width = 100 sec, 20% Duty Cycle
34 23 10
12 14 16 18 20 22 24 26 28 30 32 10 100 300
Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) PEAK
f P1dB P3dB Figure 9. Power Gain and Drain Efficiency
(MHz) (W) (W) versus Output Power and Quiescent Current
230 159 182

Figure 8. Output Power versus Input Power

29 90 29
VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz --40_C IDQ(A+B) = 100 mA, f = 230 MHz
28 Pulse Width = 100 sec, 20% Duty Cycle 28 Pulse Width = 100 sec, 20% Duty Cycle
80
27
D, DRAIN EFFICIENCY (%)

27 25_C 70
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)

26
26 60
25
25 50 24
TC = --40_C 85_C
24 40 23
50 V
22
23 30 45 V
25_C 21
Gps 40 V
22 20 20
85_C D
VDD = 30 V 35 V
21 10 19
1 10 100 300 0 50 100 150 200
Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK

Figure 10. Power Gain and Drain Efficiency Figure 11. Power Gain versus Output Power
versus Output Power and Drain--Source Voltage

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
8 Freescale Semiconductor, Inc.
 230 MHz NARROWBAND PRODUCTION TEST FIXTURE

VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 150 W Peak

f Zsource Zload
MHz  
230 6.2 + j17.7 12.1 + j12.5
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured from
drain to drain, balanced configuration.

Input Device Output

Matching + Under -- Matching
50  Network Test Network 50 

-- +
Zsource Zload

Figure 12. Narrowband Series Equivalent Source and Load Impedance — 230 MHz

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc. 9
 87.5–108 MHz BROADBAND REFERENCE CIRCUIT

Table 8. 87.5–108 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pin = 1.5 W

f Gps D Pout
Signal Type (MHz) (dB) (%) (W)
CW 87.5 22.7 74.6 187
98 22.8 77.1 191
108 22.5 77.8 179

Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit, 50 ohm system) IDQ(A+B) = 100 mA
Frequency Pin
(MHz) Signal Type VSWR (W) Test Voltage, VDD Result
98 CW > 65:1 3.0 50 No Device
at all Phase Angles (3 dB Overdrive) Degradation

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
10 Freescale Semiconductor, Inc.
 87.5–108 MHz BROADBAND REFERENCE CIRCUIT

R5* R6* R4* R3* C1* R9* C7

C3* C11 C12 C13
C14 C6
R10*
+
D58764 R8* U1*
R7* C2*
R1* L2 L3
U2*
R2*

L1 C8

T1 Q1

C4 C5 C9 C10

COAX1

MRFE6VP5150N
Rev. 0

* Bias Regulator and Temperature Compensation. Refer to AN1643, RF LDMOS Power Modules for GSM Base Station
Application: Optimum Biasing Circuit. Go to http://www.freescale.com/rf. Select Documentation/Application Notes – AN1643.

Figure 13. MRFE6VP5150NR1 Broadband Reference Circuit Component Layout — 87.5–108 MHz

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc. 11
 87.5–108 MHz BROADBAND REFERENCE CIRCUIT

Table 10. MRFE6VP5150NR1 Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz
Part Description Part Number Manufacturer
C1, C2 1 F Chip Capacitors GRM21BR71H105KA12L Murata
C3 10 nF Chip Capacitor ATC200B103KT50XT ATC
C4, C8, C9 1000 pF Chip Capacitors ATC200B102KT50XT ATC
C5 43 pF Chip Capacitor ATC100B430JT500XT ATC
C6, C14 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C7 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26RH Multicomp
C10 10 pF Chip Capacitor ATC100B100JT500XT ATC
C11 10 nF Chip Capacitor GRM319R72A103KA01D Murata
C12 47 nF Chip Capacitor GRM31MR72A473KA01L Murata
C13 470 nF Chip Capacitor GRM31MR72A474KA35L Murata
Coax1 35  Flex Cable, 11.02, 3 Turns HSF-141C-35 Hongsen Cable
L1 47 nH Inductor 1812SMS47NJLC Coilcraft
L2, L3 Toroid Core, 10 Turns, 22 AWG Magnetic Wire 11-750-K / 8077 Ferronics/Beldon
Q1 RF Power LDMOS Transistor MRFE6VP5150NR1 Freescale
R1 2.2 K, 1/8 W Chip Resistor CRCW08052K20FKEA Vishay
R2 390 , 1/8 W Chip Resistor CRCW0805390RFKEA Vishay
R3 10 , 1/8 W Chip Resistor RK73H2ATTD10R0F KOA Speer
R4 1.0 K, 1/8 W Chip Resistor RR1220P-102-D Susumu
R5 2.7 K, 1/8 W Chip Resistor CRCW08052K70FKEA Vishay
R6 200 , 1/8 W Chip Resistor CRCW0805200RFKEA Vishay
R7 5.0 K Multi-turn Cermet Trimmer Potentiometer 3224W-1-502E Bourns
R8 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
R9, R10 5.1 K, 1/2 W Chip Resistors CRCW12105K10FKEA Vishay
T1 61 Material Binocular Core Ferrite (1:1) with 2861000102 Fair-Rite
24 AWG 1 Turn Primary, 24 AWG 1 Turn
Secondary, Hand Wound
U1 Voltage Regulator 5 V, Micro8 LP2951ACDMR2G ON Semiconductor
U2 NPN Bipolar Transistor BC847ALT1G ON Semiconductor
PCB Rogers RO4350B, 0.030, r = 3.66 D58764 MTL

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
12 Freescale Semiconductor, Inc.
RF Device Data
Bias Regulator and VDD
Temperature Compensation +
R8 C11 C12 C13 C14 C6 C7

Freescale Semiconductor, Inc.

L2 L3
Z3
Z9 Z11 Z13 C8 Z15
RF Z4
INPUT C5
Z1 L1 Z2 Z5 Z7
RF
COAX1 Z17 OUTPUT
C4
T1 DUT C10
Z6 Z8

Z10 Z12 Z14 C9 Z16

Figure 14. MRFE6VP5150NR1 Broadband Reference Circuit Schematic — 87.5–108 MHz

Table 11. MRFE6VP51510NR1 Broadband Reference Circuit Microstrips — 87.5–108 MHz

Microstrip Description Microstrip Description
Z1 0.230  0.080 Microstrip Z9, Z10 0.240  0.180 Microstrip
Z2* 0.280  0.080 Microstrip Z11*, Z12* 2.060  0.027 Microstrip
Z3* 0.680  0.080 Microstrip Z13*, Z14* 0.680  0.150 Microstrip
Z4 0.310  0.170 Microstrip Z15, Z16 0.240  0.210 Microstrip
Z5, Z6 0.270  0.200 Microstrip Z17 0.480  0.150 Microstrip
Z7, Z8 0.380  0.630 Microstrip * Line length includes microstrip bends

13
MRFE6VP5150NR1 MRFE6VP5150GNR1
 TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT

25 90
VDD = 50 Vdc, Pin = 1.0 W, IDQ(A+B) = 100 mA
24.5 80

EFFICIENCY (%)
D

D, DRAIN
24 70

Gps, POWER GAIN (dB)

23.5 60
23 50
22.5 40
Gps
22 200

POWER (WATTS)
Pout, OUTPUT
21.5 175
Pout
21 150
20.5 125
20 100
86 88 90 92 94 96 98 100 102 104 106 108 110
f, FREQUENCY (MHz)
Figure 15. Power Gain, Drain Efficiency and CW Output
Power versus Frequency at a Constant Input Power

200 200
VDD = 50 Vdc VDD = 50 Vdc
Pin = 0.25 W 0.5 W
Pin = 1.0
Pout, OUTPUT POWER (WATTS)

Pout, OUTPUT POWER (WATTS)

150 150
f = 108 MHz

100 100
f = 108 MHz
98 MHz
98 MHz
50 50
87.5 MHz
87.5 MHz
0 0
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
VGS, GATE--SOURCE VOLTAGE (VOLTS) VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 16. CW Output Power versus Gate--Source Figure 17. CW Output Power versus Gate--Source
Voltage at a Constant Input Power Voltage at a Constant Input Power

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
14 Freescale Semiconductor, Inc.
 TYPICAL CHARACTERISTICS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT

54

52

Pout, OUTPUT POWER (dBm)

50
f = 108 MHz
98 MHz
48
87.5 MHz

46
VDD = 50 Vdc
lDQ(A+B) = 100 mA
44
20 22 24 26 28 30
Pin, INPUT POWER (dBm)

f P1dB P3dB
(MHz) (W) (W)
87.5 164 189
98 145 183
108 130 165

Figure 18. CW Output Power versus Input Power

30 90

28 D 80
f = 108 MHz

D, DRAIN EFFICIENCY (%)

Gps, POWER GAIN (dB)

98 MHz
26 70

24 87.5 MHz 60
108 MHz Gps
22 50
98 MHz
20 40
87.5 MHz VDD = 50 Vdc, lDQ(A+B) = 100 mA
18 30
30 100 200
Pout, OUTPUT POWER (WATTS)
Figure 19. Power Gain and Drain Efficiency
versus CW Output Power

MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc. 15
 87.5–108 MHz BROADBAND REFERENCE CIRCUIT

Zo = 50 
Zsource f = 108 MHz

f = 87.5 MHz

f = 87.5 MHz
Zload

f = 108 MHz

VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 150 W CW

f Zsource Zload
MHz  
87.5 20.3 + j26.9 35.3 + j15.9
92 20.4 + j29.6 35.2 + j17.1
96 20.6 + j31.9 35.1 + j17.3
100 20.8 + j34.1 33.2 + j17.4
104 21.0 + j36.5 31.7 + j19.5
108 21.4 + j38.6 30.6 + j21.4
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured
from drain to drain, balanced configuration.

Input Device Output

Matching + Under -- Matching
Network Test Network
50  50 

-- +
Z Z
source load

Figure 20. Broadband Series Equivalent Source and Load Impedance — 87.5–108 MHz

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 HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT

10
1 [T1] 100 MHz
1
0 1 [T1] 100 MHz --39.8 dB

--10 2 [T1] 200 MHz --20.1 dB

3 [T1] 300 MHz --45.5 dB H2 H3 H4 H5
2 (200 MHz) (300 MHz) (400 MHz) (500 MHz)
--20
4 [T1] 400 MHz --35.6 dB
--39.8 dB --20.1 dB --45.5 dB --35.6 dB
--30
4
1
--40
3
--50

--60

--70

--80

--90
Start 0 Hz 60 Hz Stop 600 Hz

Figure 21. 100 MHz Harmonics @ 150 W

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 PACKAGE DIMENSIONS

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 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS

Refer to the following resources to aid your design process.

Application Notes
 AN1955: Thermal Measurement Methodology of RF Power Amplifiers
 AN1643: RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit
Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
 RF High Power Model
Development Tools
 Printed Circuit Boards

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document.

Revision Date Description

0 May 2014  Initial Release of Data Sheet

1 July 2014  Table 10, Broadband Reference Circuit Component Designations and Values — 87.5–108 MHz: updated
R2, R9 and R10 resistors, p. 12

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