FTP14N50C

FTA14N50C
N-Channel MOSFET Pb Lead Free Package and Finish

Applications:
• Adaptor VDSS RDS(ON) (Max.) ID
• TV Main Power 500V 0.46 Ω 14 A
• LCD Panel Power

Features: D
• RoHS Compliant
• Low ON Resistance

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• Low Gate Charge
G

Ordering Information G G
D D
S TO-220 S TO-220F

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PART NUMBER PACKAGE BRAND S
FTP14N50C TO-220 FTP14N50C Packages
Not to Scale
FTA14N50C TO-220F FTA14N50C

Absolute Maximum Ratings TC=25 oC unless otherwise specified

Symbol Parameter FTP14N50C FTA14N50C Units
VDSS Drain-to-Source Voltage (NOTE *1) 500 V
ID Continuous Drain Current 14.0 14.0*
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ID@ 100 C Continuous Drain Current 8.50 A
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IDM Pulsed Drain Current, VGS@ 10V (NOTE *2) 56

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Power Dissipation 188 50 W

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Derating Factor above 25 C 1.52 0.40 W/ C
VGS Gate-to-Source Voltage ± 30 V
Single Pulse Avalanche Engergy
EAS 225 mJ
L=1 mH, ID=21 Amps
IAS Pulsed Avalanche Rating Figure 8 A
dv/dt Peak Diode Recovery dv/dt (NOTE *3) 3.0 V/ns
Maximum Temperature for Soldering
TL Leads at 0.063 in (1.6 mm) from Case for 10 seconds 300
TPKG Package Body for 10 seconds 260 o
C
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Operating Junction and Storage

TJ and TSTG -55 to 150
Temperature Range
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.

Thermal Resistance
Symbol Parameter FTP14N50C FTA14N50C Units Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
RθJC Junction-to-Case 0.66 2.5 o
justed for a peak junction temperature of +150 C.
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C/W
RθJA Junction-to-Ambient 62 100 1 cubic foot chamber, free air.

©2009 InPower Semiconductor Co., Ltd. Page 1 of 4 FTP14N50C/FTA14N50C Preliminary Mar. 2009
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OFF Characteristics TJ=25 C unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 500 -- -- V VGS=0V, ID=250µA
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BreakdownVoltage Temperature Reference to 25 C,
ΔBVDSS /Δ TJ -- 0.631 -- V/ C
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Coefficient, Figure 11. ID=250µA

-- -- 25 VDS=500V, VGS=0V
IDSS Drain-to-Source Leakage Current µA
VDS=400V, VGS=0V
-- -- 250 o
TJ=125 C
Gate-to-Source Forward Leakage -- -- 100 VGS=+30V
IGSS nA
Gate-to-Source Reverse Leakage -- -- -100 VGS= -30V

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ON Characteristics TJ=25 oC unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions

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Static Drain-to-Source On-Resistance VGS=10V, ID=7.0A
RDS(ON) -- 0.4 0.46 Ω
Figure 9 and 10. (NOTE *4)
VGS(TH) Gate Threshold Voltage, Figure 12. 2.0 -- 4.0 V VDS=VGS, ID=250μA
VDS=15V, ID=14A
gfs Forward Transconductance -- 6.8 -- S
(NOTE *4)

Dynamic Characteristics Essentially independent of operating temperature

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Symbol Parameter Min. Typ. Max. Units Test Conditions

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Ciss Input Capacitance -- 2129 -- VGS=0V

Coss Output Capacitance -- 180 -- VDS=25V
pF
f =1.0MHz
Crss Reverse Transfer Capacitance -- 18 --

Qg Total Gate Charge -- 41 -- VDD=250V

Qgs Gate-to-Source Charge -- 11 -- nC ID=14A
Qgd Gate-to-Drain (“Miller”) Charge -- 16 --
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Resistive Switching Characteristics Essentially independent of operating temperature

Symbol Parameter Min. Typ. Max. Units Test Conditions
td(ON) Turn-on Delay Time -- 16 -- VDD=250V
trise Rise Time -- 30 -- ID=14A
ns
td(OFF) Turn-Off Delay Time -- 52 -- VGS=10V
tfall Fall Time -- 36 -- RG=10Ω

©2009 InPower Semiconductor Co., Ltd. Page 2 of 4 FTP14N50C/FTA14N50C Preliminary Mar. 2009
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Source-Drain Diode Characteristics Tc=25 C unless otherwise specified
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) -- -- 14 A Integral pn-diode
ISM Maximum Pulsed Current (Body Diode) -- -- 56 A in MOSFET
VSD Diode Forward Voltage -- -- 1.5 V IS=14A, VGS=0V
trr Reverse Recovery Time -- 345 578 ns VGS=0V
Qrr Reverse Recovery Charge -- 2.5 3.8 uC IF=14A, di/dt=100 A/µs

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Notes:

*1. TJ = +25 oC to +150 oC.

*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 14 A, di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380µs; duty cycle < 2%.

©2009 InPower Semiconductor Co., Ltd. Page 3 of 4 FTP14N50C/FTA14N50C Preliminary Mar. 2009
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InPower Semiconductor Co., Ltd’s products are not authorized for use as critical components in life support devices or
systems without the expressed written approval of InPower Semiconductor Co., Ltd.

As used herein:
1. Life support devices or systems are devices or systems which:
a. are intended for surgical implant into the human body,
b. support or sustain life,
c. whose failure to perform when properly used in accordance with instructions
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for used provided in the labeling, can be reasonably expected to result in significant
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©2009 InPower Semiconductor Co., Ltd. Page 4 of 4 FTP14N50C/FTA14N50C Preliminary Mar. 2009