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AE2VOT03 Basics of Power Electronics 2019

This document appears to be an exam for a course on basics of power electronics. It contains instructions for a 3 hour exam divided into 3 parts. Part A contains 10 short answer questions worth 2 marks each. Part B contains 6 longer answer questions worth 5 marks each. Part C contains 2 essay questions worth 15 marks each. The questions cover topics like the differences between BJTs and FETs, characteristics of N-channel JFETs, MOSFETs, biasing circuits, and amplifier configurations.

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Boni Samuel
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72 views2 pages

AE2VOT03 Basics of Power Electronics 2019

This document appears to be an exam for a course on basics of power electronics. It contains instructions for a 3 hour exam divided into 3 parts. Part A contains 10 short answer questions worth 2 marks each. Part B contains 6 longer answer questions worth 5 marks each. Part C contains 2 essay questions worth 15 marks each. The questions cover topics like the differences between BJTs and FETs, characteristics of N-channel JFETs, MOSFETs, biasing circuits, and amplifier configurations.

Uploaded by

Boni Samuel
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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QP CODE: 19101780 19101780 Reg No : .....................

Name : .....................

B.Sc. DEGREE (CBCS) EXAMINATION, MAY 2019


Second Semester
B.Sc Physics Model II Applied Electronics
Vocational Course - AE2VOT03 - BASICS OF POWER ELECTRONICS
2017 ADMISSION ONWARDS
0FFEA5A4

Maximum Marks: 80 Time: 3 Hours

Part A
Answer any ten questions.
Each question carries 2 marks.

1. Explain why BJTs are called bipolar device while FETs are called unipolar devices.

2. What is an N channel JFET? Draw the structure of an N channel JFET?

3. The value of pinch off voltage is reached at a smaller value of drain current if the gate to source
voltage is increased. Explain

4. Write the two types of MOSFET and their major differences.

5. Draw the transfer characteristics of a depletion type MOSFET.

6. Define threshold voltage for an enhancement type MOSFET. Explain its significance.

7. Draw and explain the circuit symbol of a P channel enhancement type MOSFET.

8. Distinguish between N channel and P channel MOSFET.

9. Sketch the circuit diagram of a self-biased JFET.

10. Sketch the circuit of a source biased JFET.

11. Draw the biasing circuit for a depletion type MOSFET.

12. Write down the expression for the voltage gain of a common drain amplifier.
(10×2=20)
Part B
Answer any six questions.
Each question carries 5 marks.

13. A JFET has a drain current of 15 mA. If IDSS = 25 mA and VP = 5 V, find VGS.

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14. For an N channel JFET IDSS = 8.7 mA; VP = -3 V; VGS = -1 V. Find the values of (i) ID (ii) gmo
(iii) gm.

15. Differentiate between BJT and FET.

16. Write a short note on transfer characteristics of depletion type MOSFET.

17. Sketch the transfer characteristics of an enhancement type MOSFET. Write the equation for drain
current for an enhancement MOSFET.

18. Explain the various handling precautions of a MOSFET.

19. What do you mean by biasing? Explain the need for biasing a JFET. Name the different methods of
biasing a JFET.

20. Obtain the expression for voltage gain and input resistance of a common source amplifier.

21. Explain the effect of external source resistance on the voltage gain of a common source amplifier.
(6×5=30)
Part C
Answer any two questions.
Each question carries 15 marks.

22. Explain the five important specification ratings with typical values of JFET and explain their
practical significance.

23. Discuss the JFET parameters and explain its experimental determination.

24. Describe the construction and explain the operation of depletion enhancement IGFET. Also draw the
drain characteristics.

25. Discuss how to set a Q point in a self-biased JFET? Also explain the setting of a Q point using D.C
load line.
(2×15=30)

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