University of Tripoli

Faculty of Engineering
Electrical and Electronic Department
EE311 Electronic Laboratory

BJT: input and output characteristics

Lecturer: Eng.Taissir Elganimi
Lab Report#4

Name: Widd Elsadik Ben Guma

Number: 022171967
Group: D

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Introduction:

In Common Emitter (CE) configuration shown

below, the emitter is the common terminal so
the input is between the base and the emitter
while the output is between the collector and
the emitter.

Figure1

Input and Output characteristics definitions:

1-Input characteristic is the variation of the base
current (IB) with the base-emitter voltage (VBE).
2-Output characteristic is the variation of the
collector current (IC) with the collector-emitter
voltage (VCE).
It is clear to say from the above definitions that
the output characteristics are controlled by the
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input characteristics so the collector current IC
changes with the change in base current IB.
The Input Characteristics:
The curve is plotted between the base current
(IB) and the base-emitter voltage (VBE) to study
the input characteristics of the junction transistor
in CE configuration. The collector-emitter
voltage (VCE) is kept at a fixed value to study
the relation between IB and VBE.
Since we intend to study the input
characteristics when the transistor is in an active
state, VCE is maintained at a large value. The
value chosen is large enough to ensure reverse
biasing of the base-collector junction. For a
Silicon transistor, VCE = 0.6-0.7 V. Also,
VCE = VCB + VBE
Hence, VCE has to be maintained at a value
much larger than 0.7 V. The approximate range
of voltage is between 3 and 20 V. An increase in
the value of VCE appears as an increase in the
value of VCB. Hence, we get almost identical
curves for various values of VCE. Also,

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determining one input characteristic is sufficient
to understand curve as shown below:

Figure2

The Output Characteristics:

To study the output characteristics, let’s plot a
curve is between the Collector current (IC) and
the collector-emitter voltage (VCE). Also, keep
the base current (IB) at a steady value, if the
base-emitter current (VBE) is increased by a
small amount, you can observe an increase in
hole current from the emitter and electron
current from the base regions. Hence, IB and IC
increase proportionally, in other words if IB
increases, IC increases too, So keeping IB
constant and plotting IC against VCE, you can
make the following observations:

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 Figure3

For every value of IB, the plot of IC versus VCE

displays one output characteristic.

Experiment Objectives:

To measure the input and output characteristics

of a bipolar junction transistor.

Materials (Equipment list):

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1- Variable DC power supply(0-15)v.
2- Digital Multimeter.
3- Oscilloscope.
3- Resistors: (100kΩ and 0.22kΩ).
4- BC107 transistor.
5- Set of jumpers and connection cables.

Experiment Procedure:

-Part 1 (Testing the transistor using

oscilloscope):
1-Test the transistor to see that if it works or not,
connect it to oscilloscope, the screen of the
oscilloscope must display the I-V characteristics
of the transistor.

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 -Part 2 (Determining the input
characteristics):
1-Compose the circuit as shown below:

Figure4

2-Set the value of VCC=2.5v, then adjust the

value of VBB to these values:
VBB(v) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

3-For each value of VBB, measure VBE.

4-Plot the curve IB versus VBE.

-Part 3 (Determining the output

characteristic):
1-Compose the circuit as shown below:
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 Figure5

2-Adjust the value of VBB until IB=10uA.

3-For IB=10uA, adjust the value of VCC until VCE
reach to the following values:
VCE(v) 0.1 0.2 0.3 0.5 0.7 1 2 3 4 5

4-For each value of VCE, measure IC and VRC,

then calculate IC using this equation:
(IC=VRC/0.22kΩ) and calculate B=IC/IB.
5-Repeat the steps (2,3 and 4) with IB=40uA
then with IB=80uA.

Results:

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-Part 1:

Graph1

-Part 2:
VBB(v) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

IB(uA) 5 14.7 23.8 34 44.1 54.3 63.3 74 83.8 93.1 103 113.5 123 132 142.8

VBE(v) 0.55 0.58 0.59 0.609 0.61 0.62 0.628 0.63 0.64 0.641 0.641 0.648 0.65 0.65 0.655

Table1

I-V characteristics
160
IB(uA)

140
120
100
80
60
40
20
VBE(v)
0
0.54 0.56 0.58 0.6 0.62 0.64 0.66 0.68
Graph2

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 -Part 3:
IB(uA) VCE(V) 0.1 0.2 0.3 0.5 0.7 1 2 3 4 5
IC(mA)measured 1.03 1.59 1.66 1.67 1.67 1.67 1.67 1.7 1.7 1.7
10uA VRC(v)measured 0.23 0.35 0.36 0.36 0.36 0.36 0.36 0.37 0.37 0.37
IC=VRC/.22k 1.045 1.59 1.63 1.63 1.63 1.63 1.63 1.68 1.68 1.68
B=IC/IB 104.5 159 163 163 163 163 163 168 168 168
IB(uA) VCE(V) 0.1 0.2 0.3 0.5 0.7 1 2 3 4 5
IC(mA)measured 4.25 6.49 6.75 6.85 6.88 6.88 6.89 7.05 7.13 7.2
40uA VRC(v)measured 0.96 1.45 1.49 1.5 1.5 1.5 1.5 1.54 1.56 1.58
IC=VRC/.22k 4.36 6.59 6.77 6.82 6.82 6.82 6.82 7 7.1 7.18
B=IC/IB 109 164.75 169.25 170.5 170.5 170.5 170.5 175 177.5 179.5
IB(uA) VCE(V) 0.1 0.2 0.3 0.5 0.7 1 2 3 4 5
IC(mA)measured 7.13 11.76 12.95 13.59 13.76 13.9 14.1 14.33 14.63 14.8
80uA VRC(v)measured 1.63 2.67 2.91 3 3.02 3.04 3.1 3.15 3.2 3.26
IC=VRC/.22k 7.41 12.14 13.23 13.64 13.73 13.82 14.1 14.32 14.55 14.82
B=IC/IB 92.63 151.75 165.37 170.5 171.63 172.75 176.25 179 181.9 185.25
Table2

-Curve IC versus VCE:

16
IC(mA)

14

12

10 IB=10uA
IB=40uA
8
IB=80uA
6

2
VCE(v)
0
0 1 2 3 4 5 6
Graph3

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Discussion:

-Part 1:
For the first part of the experiment, we can see
that the I-V characteristic of the BJT showing on
the display of the oscilloscope, so we can say
that our transistor is valid.
The screen of the oscilloscope shows two
regions: active and cutoff region.

-Part 2:
In this part we measure the input
characteristics of the transistor (IB & VBE),
then we plot the curve to study the
relationship between IB and VBE, so we can
see that with increasing in VBB there’s an
increasing in IB and small increasing in VBE.
We should note from the graph that with
large increase in IB there’s a small increase

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in VBE (linear relation), until we reach to
specific value of VBE (depending on the
material used in transistor) that there’s
almost no change in VBE however we
increase the IB.

-Part 3:
In this part we measure the output
characteristics of our transistor (IC & VCE), by
using different values of IB and VCE and we
note:
1-IC and VRC are increasing with increase in IB
(VCE constant).
2- IC and VRC are increasing with increase in
VCE (IB constant).
3-While IB=10uA, the smallest value of B is 104.5
at VCE=0.1v & IC=1.045mA, and the largest
value of B is 168 at VCE=5v & IC=1.68mA.
4-While IB=40uA, the smallest value of B is 109 at
VCE=0.1v & IC=4.36mA, and the largest value of
B is 179.5 at VCE=5v & IC=7.18mA.

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5-While IB=80uA, the smallest value of B is 92.63
at VCE=0.1v & IC=7.41mA, and the largest value
of B is 185.25 at VCE=5v & IC=14.82mA.
6-IB is in the range between (10-80)uA, the
smallest value of B is 92.63 at VCE=0.1, IC=7.41
and IB=80uA, and the largest value of B is 185.25
at VCE=5, IC=14.82 and IB=80uA.
7-In general B increase with increase in IC for
constant VCE and IB, and also increase with
increase in VCE for constant IC and IB.
8-The effect of IC is greater than the effect of
VCE on B, because B depends directly on IC
(B=IC/IB) for example in the table of part3 ,when
IB=10uA and IC =1.63mA and VCE is in the
range between (0.3-2)v we can see that B=163,
so the effect of IC is greater because B kept
constant while IC is constant for IB constant.
9-Calculation of h-parameters: -From graph2 and table2
a)hie= ΔVBE/ΔIB (VCE is constant)
VBE≈0.56 when IB=10uA
VBE≈0.64 when IB=80uA
ΔIB=80-10=70uA, ΔVBE=0.64-0.56=0.08V
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 hie=0.08/70≈1142.86Ω
b)hre=ΔVBE/ΔVCE (IB is constant)

IB(uA) 10 40 80
ΔVBE(v) 0.58-0.56 0.62-0.6 0.64-0.62
ΔVCE(v) 5-0.1 5-0.1 5-0.1
hre(v/v) 0.2/4.9≈0.041 0.2/4.9≈0.041 0.2/4.9≈0.041

c)hoe=ΔIC/ΔVCE (IB is constant)

IB(uA) 10 40 80
ΔIC(mA) 1.7-1.03 7.2-4.25 14.8-7.13
ΔVCE(v) 5-0.1 5-0.1 5-0.1
hoe(mA/v) 0.67/4.9≈0.137 2.95/4.9≈0.602 7.67/4.9≈1.565

d)hfe=ΔIC/ΔIB (VCE is constant)

VCE(v) 0.1 0.2 0.3 0.5 0.7 1 2 3 4 5

ΔIC(mA) 7.13- 11.76-1.59 12.95-1.66 13.59-1.67 13.76-1.67 13.9-1.67 14.1-1.67 14.33-1.7 14.63-1.7 14.8-1.7
1.03
ΔIB(mA) 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07 0.07
=0.08-
0.01
hfe(A/A) 6.1/0.07 10.17/0.07 11.29/0.07 11.92/0.07 12.09/0.07 12.23/0.07 12.43/0.07 12.63/0.07 12.93/0.07 13.1/0.07
≈87.143 ≈145.286 ≈161.286 ≈170.286 ≈172.714 ≈174.714 ≈177.571 ≈180.429 ≈184.714 ≈187.143

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Conclusion:

At the end of my report; Let’s focus about an

important question which is:
-Why the curve of IB versus VBE isn’t straight line
as should be, and why the measured values
aren’t the same as the simulated values?
The answer for the two parts of the question is
almost the same, it’s because in calculations
we assume that the element is ideal and all the
other components (like connection wires and
measurement devices) are also ideal, but
actually in measurements there’s nothing acts
like an ideal element, for example in this
experiment the transistor parameters are
function of temperature, so they’re change
when the temperature is change, also the
connection wires aren’t ideal so in fact they
have an internal reactance effect on
measurement values, also the resistors aren’t
ideal so there values are changing by time,
finally the measurement devices like
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DMM(Digital Multimeter) may be not accurately
because it wants calibration.
The second point I want to include is the
applications of BJT transistor in practical life
which are:
1-It is used in logic circuits.
2-It is used as an oscillator.
3-It is used as an amplifier.
4-It is used as a multivibrator.
5-For wave shaping, it is used in clipping circuits.
6-Used as a detector or demodulator.
7-It is also used as a modulator.
8-Used in timer and time delay circuits.
9-It is used in electronics switch.
10-It is used in switching circuits.

Finally; Thank you Eng.Taisser for your kindness,

and I hope my report reaches to the mean
point.

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Reference:
Web sites:
https://www.toppr.com/guides/physics/semico
nductor-electronics-materials-device-and-
simple-circuits/junction-transistor-circuit-
configurations-and-characteristics/
https://www.eeeguide.com/transistor-models-
and-parameters/
https://www.quora.com/What-are-the-
applications-of-BJT

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