Hall Effect Experiment Hex 21c
Hall Effect Experiment Hex 21c
Introduction
The resistivity measurements of semiconductors can not reveal whether one or two types of carriers are
present; nor distinguish between them. However, this information can be obtained from Hall Coefficient
measurements, which are also basic tools for the determination of carrier density and mobilities in conjuction
with resistivity measurement.
Theory
As you are undoubtedly aware, a static magnetic field has no effect on charges unless they are in motion.
When the charges flow, a magnetic field directed perpendicular to the direction of flow produces a mutually
perpendicular force on the charges. When this happens, electrons and holes will be separated by opposite
–
forces. They will in turn produce an electric field (Eh) which depends on the cross product of the magnetic
– –
intensity, H, and the current density, J.
– – –
E h = RJ x H
Where R is called the Hall Coefficient
– –
Now, let us consider a bar of semiconductor, having dimension, x, y and z. Let J is directed along X and H
–
along Z then E h will be along Y.
Then we could write
Vh /y Vh.z
R = —— = ——
JH IH
–
Where Vh is the Hall voltage appearing between the two surfaces perpendicular to y and I=J yz
SPECIFICATIONS
Range: 0-200mV (100µV minimum)
Accuracy: ±0.1% of reading ±1 digit
SPECIFICATIONS
Current: 0-20mA
Resolution: 10µA
Accuracy: ±0.2% of the reading ±1 digit
Load regulation: 0.03% for 0 to full load
Line regulation: 0.05% for 10% variation