ELECTRONICS AND COMMUNICATION ENGINEERING

ECT201 SOLID STATE DEVICES CATEGORY L T P CREDIT

PCC 3 1 0 4

Preamble: This course aims to understand the physics and working of solid state devices.

Prerequisite: EST130 Basics of Electrical and Electronics Engineering

Course Outcomes: After the completion of the course the student will be able to

CO 1 Apply Fermi-Dirac Distribution function and Compute carrier concentration at

equilibrium and the parameters associated with generation, recombination and transport
mechanism

CO 2 Explain drift and diffusion currents in extrinsic semiconductors and Compute current
density due to these effects.
CO 3 Define the current components and derive the current equation in a pn junction diode and
bipolar junction transistor.

CO 4 Explain the basic MOS physics and derive the expressions for drain current in linear and
saturation regions.

CO 5 Discuss scaling of MOSFETs and short channel effects.

Mapping of course outcomes with program outcomes

PO 1 PO 2 PO 3 PO 4 PO 5 PO 6 PO 7 PO 8 PO 9 PO PO PO
10 11 12
CO 3 3
1
CO 3 3
2
CO 3 3
3
CO 3 3
4
CO 3
5

Assessment Pattern

Bloom’s Category Continuous Assessment Tests End Semester Examination

1 2
Remember 10 10 20
Understand 25 25 50
Apply 15 15 30
Analyse
Evaluate
Create

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Mark distribution

Total CIE ESE ESE Duration

Marks

150 50 100 3 hours

Continuous Internal Evaluation Pattern:

Attendance : 10 marks
Continuous Assessment Test (2 numbers) : 25 marks
Assignment/Quiz/Course project : 15 marks

End Semester Examination Pattern: There will be two parts; Part A and Part B. Part A contain 10
questions with 2 questions from each module, having 3 marks for each question. Students should
answer all questions. Part B contains 2 questions from each module of which student should answer
any one. Each question can have maximum 2 sub-divisions and carry 14 marks.

Course Level Assessment Questions

Course Outcome 1 (CO1): Compute carrier concentration at equilibrium and the parameters
associated with generation, recombination and transport mechanism

1. Derive the expression for equilibrium electron and hole concentration.

2. Explain the different recombination mechanisms

3. Solve numerical problems related to carrier concentrations at equilibrium, energy band

diagrams and excess carrier concentrations in semiconductors.

Course Outcome 2 (CO2) : Compute current density in extrinsic semiconductors in specified

electric field and due to concentration gradient.

1. Derive the expression for the current density in a semiconductor in response to the applied
electric field.

2. Derive the expression for diffusion current in semiconductors.

3. Show that diffusion length is the average distance a carrier can diffuse before recombining.

Course Outcome 3 (CO3): Define the current components and derive the current equation in
a pn junction diode and bipolar junction transistor.

1. Derive ideal diode equation.

2. Derive the expression for minority carrier distribution and terminal currents in a BJT.

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3. Solve numerical problems related to PN junction diode and BJT.

Course Outcome 4 (CO4): Explain the basic MOS physics with specific reference on
MOSFET characteristics and current derivation.

1. Illustrate the working of a MOS capacitor in the three different regions of operation.

2. Explain the working of MOSFET and derive the expression for drain current.

3. Solve numerical problems related to currents and parameters associated with MOSFETs.

Course Outcome 5 (CO5): Discuss the concepts of scaling and short channel effects of
MOSFET.

1. Explain the different MOSFET scaling techniques.

2. Explain the short channel effects associated with reduction in size of MOSFET.

SYLLABUS
MODULE I
Elemental and compound semiconductors, Intrinsic and Extrinsic semiconductors, concept of
effective mass, Fermions-Fermi Dirac distribution, Fermi level, Doping & Energy band
diagram, Equilibrium and steady state conditions, Density of states & Effective density of
states, Equilibrium concentration of electrons and holes.
Excess carriers in semiconductors: Generation and recombination mechanisms of excess
carriers, quasi Fermi levels.
MODULE II
Carrier transport in semiconductors, drift, conductivity and mobility, variation of mobility
with temperature and doping, Hall Effect.
Diffusion, Einstein relations, Poisson equations, Continuity equations, Current flow
equations, Diffusion length, Gradient of quasi Fermi level

MODULE III
PN junctions : Contact potential, Electrical Field, Potential and Charge distribution at the
junction, Biasing and Energy band diagrams, Ideal diode equation.
Metal Semiconductor contacts, Electron affinity and work function, Ohmic and Rectifying
Contacts, current voltage characteristics.
Bipolar junction transistor, current components, Transistor action, Base width modulation.

MODULE IV
Ideal MOS capacitor, band diagrams at equilibrium, accumulation, depletion and inversion,
threshold voltage, body effect, MOSFET-structure, types, Drain current equation (derive)-
linear and saturation region, Drain characteristics, transfer characteristics.

MODULE V
MOSFET scaling – need for scaling, constant voltage scaling and constant field scaling.

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Sub threshold conduction in MOS.
Short channel effects- Channel length modulation, Drain Induced Barrier Lowering, Velocity
Saturation, Threshold Voltage Variations and Hot Carrier Effects.
Non-Planar MOSFETs: Fin FET –Structure, operation and advantages

Text Books

1. Ben G. Streetman and Sanjay Kumar Banerjee, Solid State Electronic Devices, Pearson
6/e, 2010 (Modules I, II and III)

2. Sung Mo Kang, CMOS Digital Integrated Circuits: Analysis and Design, McGraw-Hill,
Third Ed., 2002 (Modules IV and V)

Reference Books
1. Neamen, Semiconductor Physics and Devices, McGraw Hill, 4/e, 2012

2. Sze S.M., Semiconductor Devices: Physics and Technology, John Wiley, 3/e, 2005

3. Pierret, Semiconductor Devices Fundamentals, Pearson, 2006

4. Sze S.M., Physics of Semiconductor Devices, John Wiley, 3/e, 2005

5. Achuthan, K N Bhat, Fundamentals of Semiconductor Devices, 1e, McGraw Hill,2015

6. Yannis Tsividis, Operation and Modelling of the MOS Transistor, Oxford University
Press.
7. Jan M.Rabaey, Anantha Chandrakasan, Borivoje Nikolic, Digital Integrated Circuits - A
Design Perspective, PHI.

Course Contents and Lecture Schedule

No Topic No. of Lectures
1 MODULE 1
1.1 Elemental and compound semiconductors, Intrinsic and Extrinsic 2
semiconductors, Effective mass
1.2 Fermions-Fermi Dirac distribution, Fermi level, Doping & Energy band 2
diagram,
1.3 Equilibrium and steady state conditions, Density of states & Effective 1
density of states
1.4 Equilibrium concentration of electrons and holes. 1
1.5 Excess carriers in semiconductors: Generation and recombination 2
mechanisms of excess carriers, quasi Fermi levels.

1.6 TUTORIAL 2

2 MODULE 2

2.1 Carrier transport in semiconductors, drift, conductivity and mobility, 2

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variation of mobility with temperature and doping.
2.2 Diffusion equation 1
2.3 Einstein relations, Poisson equations 1
2.4 Poisson equations, Continuity equations, Current flow equations 1
2.5 Diffusion length, Gradient of quasi Fermi level 1
2.6 TUTORIAL 2

3 MODULE 3
3.1 PN junctions : Contact potential, Electrical Field, Potential and Charge 2
distribution at the junction, Biasing and Energy band diagrams,
3.2 Ideal diode equation 1
3.3 Metal Semiconductor contacts, Electron affinity and work function, 3
Ohmic and Rectifying Contacts, current voltage characteristics.
3.4 Bipolar junction transistor – working,, current components, Transistor 2
action, Base width modulation.
3.5 Derivation of terminal currents in BJT 2
3.6 TUTORIAL 1

4 MODULE 4
4.1 Ideal MOS capacitor, band diagrams at equilibrium, accumulation, 2
depletion and inversion
4.2 Threshold voltage, body effect 1
4.3 MOSFET-structure, working, types, 2
4.4 Drain current equation (derive)- linear and saturation region, Drain 2
characteristics, transfer characteristics.
4.5 TUTORIAL 1

5 MODULE 5
5.1 MOSFET scaling – need for scaling, constant voltage scaling and 2
constant field scaling.
5.2 Sub threshold conduction in MOS. 1
5.3 Short channel effects- Channel length modulation, Drain Induced Barrier 3
Lowering, Velocity Saturation, Threshold Voltage Variations and Hot Carrier
Effects.
5.4 Non-Planar MOSFETs: Fin FET –Structure, operation and advantages 1

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APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY

MODEL QUESTION PAPER

ECT 201 SOLID STATE DEVICES

Time: 3 hours Max. Marks:100

PART A

Answer all questions. Each question carries 3 marks.

1. Draw the energy band diagram of P type and N type semiconductor materials, clearly
indicating the different energy levels.
2. Indirect recombination is a slow process. Justify
3. Explain how mobility of carriers vary with temperature.
4. Show that diffusion length is the average length a carrier moves before recombination.
5. Derive the expression for contact potential in a PN junction diode.
6. Explain Early effect? Mention its effect on terminal currents of a BJT.
7. Derive the expression for threshold voltage of a MOSFET.
8. Explain the transfer characteristics of a MOSFET in linear and saturation regions.
9. Explain Subthreshold conduction in a MOSFET. Write the expression for Subthreshold
current.
10. Differentiate between constant voltage scaling and constant field scaling

PART B

Answer any one question from each module. Each question carries 14 marks.

MODULE I

11. (a) Derive law of mass action. (8 marks)

5 21
(b) An n-type Si sample with Nd =10 cm is steadily illuminated such that gop = 10 -3

EHP/cm3 s. If τn = τp = 1μs for this excitation. Calculate the separation in the Quasi-s for this excitation. Calculate the separation in the Quasi-
Fermi levels (Fn-Fp). Draw the Energy band diagram.. (6 marks)
12. (a) Draw and explain Fermi Dirac Distribution function and position of Fermi level in
intrinsic and extrinsic semiconductors. (8 marks)
(b) The Fermi level in a Silicon sample at 300 K is located at 0.3 eV below the bottom of
the conduction band. The effective densities of states NC= 3.22 X 1019 cm-3 and
NV=1.83 x 1019 cm-3. Determine (a) the electron and hole concentrations at 300K
(b) the intrinsic carrier concentration at 400 K. (6 marks)

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MODULE II

13. (a) Derive the expression for mobility, conductivity and Drift current density in a
semiconductor. (8 marks)
(b) A Si bar 0.1 µm long and 100 µm2 in cross-sectional area is doped with 1017 cm- 3
phosphorus. Find the current at 300 K with 10 V applied. (b). How long will it take an
average electron to drift 1 µm in pure Si at an electric field of 100 V/cm? (6 marks)
14. (a) A GaAs sample is doped so that the electron and hole drift current densities are equal in
an applied electric field. Calculate the equilibrium concentration of electron and hole, the
net doping and the sample resistivity at 300 K. Given μs for this excitation. Calculate the separation in the Quasi-n = 8500 cm2/Vs, μs for this excitation. Calculate the separation in the Quasi-p = 400 cm2/Vs,
ni = 1.79 x 106 cm-3. (7 marks)
(b) Derive the steady-state diffusion equations in semiconductors. (6 marks)

MODULE III
15. (a) Derive the expression for ideal diode equation. State the assumptions used. (9 marks)
(b) Boron is implanted into an n-type Si sample (Nd = 1016cm-3), forming an abrupt
junction of square cross section with area = 2 x 10-3 cm 2 . Assume that the acceptor
concentration in the p-type region is Na = 4 x 1018 cm-3 . Calculate V0 , W, Q+, and E0
for this junction at equilibrium (300 K). (5 marks)
16. With the aid of energy band diagrams, explain how a metal – N type Schottky contact
function as rectifying and ohmic contacts. (14 marks)

MODULE IV
17. (a) Starting from the fundamentals, derive the expression for drain current of a MOSFET
in the two regions of operation. (8 Marks)
(b) Find the maximum depletion width, minimum capacitance Ci, and threshold voltage
for an ideal MOS capacitor with a 10-nm gate oxide (Si02) on p-type Si with Na = 1016
cm-3. (b) Include the effects of flat band voltage, assuming an n + polysilicon gate and
fixed oxide charge of 5 x 1010 q (C/cm2). (6 marks)
18. (a) Explain the CV characteristics of an ideal MOS capacitor (8 Marks)
(b) For a long channel n-MOSFET with W = 1V, calculate the VG required for an ID(sat.) of
0.1 mA and VD(sat.) of 5V. Calculate the small-signal output conductance g and V the
transconductance g m(sat.) at VD = 10V. Recalculate the new ID for (VG - VT) = 3 and VD =
4V. (6 marks)
MODULE V

19. Explain Drain induced barrier lowering, Velocity Saturation, Threshold Voltage Variations
and Hot Carrier Effects associated with scaling down of MOSFETs (14 marks)
20. With the aid of suitable diagrams explain the structure and working of a FINFET. List its
advantages (14 marks)

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