EC 104-Analog Electronics-1

UNIT-2

Dr. Manoj Kumar

USIC&T
 Introduction
• The basic of electronic system nowadays is
semiconductor device.
• The famous and commonly use of this device is BJTs
(Bipolar Junction Transistors).
• It can be use as amplifier and logic switches.
• BJT consists of three terminal:
collector : C
base : B
emitter : E
• Two types of BJT : pnp and npn
 Transistor Construction
• 3 layer semiconductor device consisting:
- 2 n- and 1 p-type layers of material npn transistor
- 2 p- and 1 n-type layers of material pnp transistor
• The term bipolar reflects the fact that holes and electrons
participate in the injection process into the oppositely
polarized material
• A single pn junction has two different types of bias:
- forward bias
- reverse bias
• Thus, a two-pn-junction device has four types of bias.
1947

Working at Bell Telephone, they were trying to

understand the nature of the electrons at the
interface between a metal and a semiconductor
(germanium).
Transistors didn't need time to "warm up" like the
heaters in vacuum tube circuits.
Transistor

A transistor is a semiconductor device commonly

used to amplify or switch electronic signals.
 Two of them are doped to give one type of
semiconductor and the there is the opposite type,
i.e. two may be n-type and one p-type, or two may be
p-type and one may be n-type.

They are designated either P-N-P (PNP) types of N-P-

N (NPN).
 When discussing NPN transistors the N-Type
semiconductor material on one side of the wafer is
designated an emitter and it is most often connected
to a negative electrical current.
 The P-Type material in the middle is the base.

The N-Type material on the other side of the base is

called the collector.
Transistor Advantages

Highly automated manufacturing processes,

resulting in low per-unit cost.

Extremely long life.

Higher reliability and greater physical ruggedness.

 Small size and minimal weight, allowing the
development of miniaturized electronic devices.

Lower possible operating voltages, making

transistors suitable for small, battery-powered
applications.
Position of the terminals and symbol of BJT.

• Base is located at the middle

and more thin from the level
of collector and emitter
• The emitter and collector
terminals are made of the
same type of semiconductor
material, while the base of the
other type of material
 Transistor currents
-The arrow is always drawn
on the emitter

-The arrow always point

toward the n-type

-The arrow indicates the

direction of the emitter
current:
pnp:E B
IC=the collector current
npn: B E
IB= the base current
IE= the emitter current
• By imaging the analogy of diode, transistor can be
construct like two diodes that connetecd together.
• It can be conclude that the work of transistor is base on
work of diode.
BJT operation modes
The transistor can be operated in three modes:
• Cut-off mode
• Saturation mode
• Active mode
In the cutoff mode, both the junctions of the transistor (emitter to base
and collector to base) are reverse biased. The cutoff mode of the
transistor is used in switching operation for switch OFF application.

Saturation mode
In the saturation mode, both the junctions of the transistor (emitter to
base and collector to base) are forward biased. In other words, if we
assume two p-n junctions as two p-n junction diodes, both the diodes
are forward biased in saturation mode. We know that in forward bias
condition, current flows through the device. Hence, electric current
flows through the transistor. Therefore, the transistor in saturation mode
will be in on state and acts like a closed switch.
The saturation mode of the transistor is used in switching operation for
switch ON application. From the above discussion, we can say that by
operating the transistor in saturation and cutoff region, we can use the
transistor as an ON/OFF switch.
Active mode
• In the active mode, one junction (emitter to base) is
forward biased and another junction (collector to
base) is reverse biased. In other words, if we assume
two p-n junctions as two p-n junction diodes, one
diode will be forward biased and another diode will
be reverse biased.