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Isc 2SC1970: Silicon NPN Power Transistor

This document provides information on the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 including its description, applications, maximum ratings, thermal characteristics, electrical characteristics, and notice. The transistor has high power gain of 9.2dB at 175MHz with 1W output and is designed for RF power amplifiers in mobile radio applications. It has been 100% avalanche tested for reliability.

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41 views2 pages

Isc 2SC1970: Silicon NPN Power Transistor

This document provides information on the INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 including its description, applications, maximum ratings, thermal characteristics, electrical characteristics, and notice. The transistor has high power gain of 9.2dB at 175MHz with 1W output and is designed for RF power amplifiers in mobile radio applications. It has been 100% avalanche tested for reliability.

Uploaded by

James RM
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SC1970

DESCRIPTION
·High Power Gain-
: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V
·High Reliability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

APPLICATIONS
·Designed for RF power amplifiers on VHF band mobile radio
applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage RBE= ∞ 17 V

VEBO Emitter-Base Voltage 4 V

IC Collector Current 0.6 A

Collector Power Dissipation


5
@TC=25℃
PC W
Collector Power Dissipation
1
@Ta=25℃

Tj Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL PARAMETER MAX UNIT

Rth j-a Thermal Resistance,Junction to Ambient 125 ℃/W

Rth j-c Thermal Resistance,Junction to Case 25 ℃/W

isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark


INCHANGE Semiconductor

isc Silicon NPN Power Transistor 2SC1970

ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA, IE= 0 40 V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 17 V

V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA, IC= 0 4 V

ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.1 mA

IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA

hFE DC Current Gain IC= 0.1A; VCE= 10V 10 180

PO Output Power 1 1.2 W


VCC= 13.5V; Pin= 0.12W;
f= 175MHz
ηC Collector Efficiency 50 60 %

 hFE Classifications

X A B C D

10-25 20-45 35-70 55-110 90-180

NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products,
and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages.

isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark

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