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Experiment No 2 Stability Analysis of BJT Collector Feedback Biasing Circuit Objective: Apparatus

This experiment analyzes the stability of a BJT collector feedback biasing circuit. The circuit employs negative feedback to prevent thermal runaway and stabilize the operating point. If the collector current increases, the voltage drop across the collector resistance also increases, reducing the base current and collector current back to their original values. Measurements were taken of the circuit's voltages and currents, and compared to calculated values with errors within 15-16%. The collector feedback configuration provides better bias stability than a simple base bias circuit.

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Mohsin Tariq
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92 views

Experiment No 2 Stability Analysis of BJT Collector Feedback Biasing Circuit Objective: Apparatus

This experiment analyzes the stability of a BJT collector feedback biasing circuit. The circuit employs negative feedback to prevent thermal runaway and stabilize the operating point. If the collector current increases, the voltage drop across the collector resistance also increases, reducing the base current and collector current back to their original values. Measurements were taken of the circuit's voltages and currents, and compared to calculated values with errors within 15-16%. The collector feedback configuration provides better bias stability than a simple base bias circuit.

Uploaded by

Mohsin Tariq
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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Experiment No 2

Stability analysis of BJT collector feedback biasing circuit


Objective:
To learn about the stability of collector feedback biasing circuit

Apparatus
1. Transistor
2. Breadboard
3. DC power supply
4. DMM

Theory
Biasing of BJT
Biasing refers to the application of D.C. voltages to setup the operating point
in such a way that output signal is undistorted throughout the whole operation.
Also once selected properly, the Q point should not shift because of
change of IC due to
(i) β variation due to replacement of the transistor of same type
(ii) Temperature variation

Stabilization
The process of making operating point independent of temperature changes or
variation in transistor parameters is known as stabilization.
Stabilization of operating point is necessary due to

 Temperature dependence of IC
 Individual variations
 Thermal runaway
Temperature dependence of IC & Thermal runaway
IC= βIB + (β + I)ICBO
 ICBO is strong function of temperature. A rise of 10oC doubles the ICBO and IC will increase
( β+1) times of ICBO
 The flow of IC produce heat within the transistor and raises the transistor temperature
further and therefore, further increase in ICBO
 This effect is cumulative and in few seconds, the IC may become large enough to burn
out the transistor.
 The self destruction of an unstablized transistor is known as thermal runaway.

Stability Factor
The rate of change collector current I C with respect to the collector leakage current I CBO at
constant β and IB is called stability factor, denoted by S.

IC= βIB + (β + I)ICBO


Differentiating equation w.r.t IC
Collector feedback biasing circuit

 This configuration employs negative feedback to prevent thermal runaway and stabilize
the operating point.
 In this form of biasing, the base resistor R B is connected to the collector instead of
connecting it to the DC source Vcc.
 So any thermal runaway will induce a voltage drop across the R C resistor that will throttle
the transistor's base current.

Applying KVL Q (VCE,IC) is set


VCC = (IC+IB)RC + VCE (1)
VCE = I B RB + VBE (2)
Since, IC = βIB so from equation (1) & (2)

Advantages:
Better stabilization compared to base bias

Disadvantages:
This circuit provides negative feedback which reduces the gain of the
amplifier.

How the bias stability is improved in collector base bias?


If IC becomes larger than design value, it causes an increase voltage drop across R C hence
smaller value of VCE which in turn causes IB to be smaller than its design value. Since I C = βIB
thus IC will also tend to be reduced towards its original value.
For bias Stabilization: (RB<< βRC)

If RB<< βRC

Procedure
 I connected the resistors to the base, emitter and collector terminals of transistor.
 I connect the DC power supply VCC with collector resistance RC.
 I checked the Q point of the transistor..
 And also record the value of current and voltages of transistors.
 Performed the exp in the constant in temperature.

Simulation

Calculation
Transistor (2N2218) β=250

Parameters Measured Calculated % error


value value
VCE 10v 9.309v 12.7%
VE 2.008v 2.138v 16%
VB 9.296v 8.63v 13%
VC 8v 8.552v 15.9%
VCB 9.3v 8.63v 14.07%
IC 10m 10.7m 15%
IB 40µ 37µ 11.76%
IE 8.6m 9.9m 13.13%

Conclusion
 In this experiment we studied stability analysis of collector feedback biasing circuit.
 It is stable with respect to base bias .
 But there was also little bit error between measured readings and calculated readings.
 This circuit provides negative feedback which reduces the gain of the amplifier.
 For bias Stabilization: (RB<< βRC)
 If RB<< βRC

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