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Lab-7: Fixed and Voltage-Divider Bias of Bjts

This document describes an experiment to determine the quiescent operating conditions of fixed-bias and voltage-divider bias BJT configurations. It involves constructing a fixed-bias circuit using specified resistors and a transistor, measuring voltages and currents, calculating beta, and comparing calculated and measured values of currents and voltages. A voltage-divider bias configuration keeps the Q-point location independent of beta variations by using feedback.

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Hamzah Naeem
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69 views3 pages

Lab-7: Fixed and Voltage-Divider Bias of Bjts

This document describes an experiment to determine the quiescent operating conditions of fixed-bias and voltage-divider bias BJT configurations. It involves constructing a fixed-bias circuit using specified resistors and a transistor, measuring voltages and currents, calculating beta, and comparing calculated and measured values of currents and voltages. A voltage-divider bias configuration keeps the Q-point location independent of beta variations by using feedback.

Uploaded by

Hamzah Naeem
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Lab-7: Fixed and Voltage- Divider Bias of BJTs

7.1 OBJECTIVE
To determine the quiescent operating conditions of the fixed- and voltage divider bias BJT
configurations.
7.2 EQUIPMENT REQUIRED
Instruments DMM
Resistors: 680Ω, 2.7kΩ, 1.8kΩ, 6.8kΩ, 33kΩ, 1MΩ
Transistors: 2N3904 (or equivalent),
Components
2N4401 or equivalent
Supplies : DC power supply
7.3 RESUME OF THEORY
The analysis or design of a transistor amplifier requires a knowledge of both the dc and the
ac response of the system. Too often it is assumed that the transistor is a magical device
that can raise the level of the applied ac input without the assistance of an external energy
source. For the BJT to be biased in its linear or active operating region the following must be true:
1. The base–emitter junction must be forward-biased (p-region voltage more positive), with a
resulting forward-bias voltage of about 0.6 V to 0.7 V.
2. The base–collector junction must be reverse-biased (n-region more positive), with the reverse-
bias voltage being any value within the maximum limits of the device.
Bipolar transistors operate in three modes: cutoff, saturation, and linear.
1. Linear-region operation: Base–emitter junction forward-biased Base–collector junction reverse-
biased.
2. Cutoff-region operation: Base–emitter junction reverse-biased Base–collector junction reverse-
biased
3. Saturation-region operation: Base–emitter junction forward-biased Base–collector junction
forward-biased
In this experiment, we will investigate two biasing networks: the fixed bias and the voltage-
divider bias configuration. The former has the serious drawback that the location of the Q- point
is very sensitive to the forward current transfer ratio ( β ) of the transistor and
temperature. Because there can be wide variations in beta and the temperature of the device, it
can be difficult to predict the exact location of the Q-point on the load line of a fixed bias
configuration. The voltage-divider bias network employs a feedback arrangement that makes
the base- emitter and collector-emitter voltages primarily dependent on the external circuit
elements and not the beta of the transistor. Thus, even though the beta of individual transistors
may vary considerably, the location of the Q-point on the load line will remain essentially fixed. The
phrase “beta-independent biasing” is often used for such an arrangement.
7.4 TASK 1 – DETERMINING THE VALUE OF BETA THROUGH FIXED BIAS CONFIGURATION
a. Construct the network of Figure
1 using transistor. Record the
measured resistance and
voltages.

𝑅𝐵 (𝑀𝑒𝑎𝑠𝑢𝑟𝑒𝑑 )=__________

𝑅𝐶 (𝑀𝑒𝑎𝑠𝑢𝑟𝑒𝑑) =__________

𝑉𝐵𝐸 (𝑀𝑒𝑎𝑠𝑢𝑟𝑒𝑑) =__________

𝑉𝑅𝐶 (𝑀𝑒𝑎𝑠𝑢𝑟𝑒𝑑) =__________

Figure 1: Determination of Beta.


b. Using the measured resistor values,
calculate the resulting base current
using the equation

𝑽𝑹𝑩
𝑰𝑩 = 𝑹𝑩
= _________
and the collector current using the equation:

𝑽𝑹𝑪
𝑰𝑪 = 𝑹𝑪
= _________

c. Using the results of Part b, calculate the value of β. This value of beta will be used for the transistor
throughout this experiment.

β =_________

7.5 TASK 2 – CALCULATE THE VALUE OF 𝑰𝑩 𝒂𝒏𝒅 𝑰𝑪 THROUGH FIXED BIAS CONFIGURATION
a. Using the β determined in Task 1, calculate the currents IB and IC for the network of Figure 1 using
the measured resistor values, the supply voltage, and the above measured value for VBE. That is,
determine the theoretical values of IB and IC using the network parameters and the value of
beta.

IB (calculated) =___________
IC (calculated) =___________

Q: How do the calculated levels of IB and IC compare to those determined from measured
voltage levels in Task 1 (b)?
b. Using the results of Task 2(a), calculate the levels of VB, VC, VE, and VCE.

VB (calculated) =__________

VC (calculated) =__________

VE (calculated) =__________

VCE (calculated) =__________

c. Energize the network of Figure 1 and measure VB, VC, VE, and VCE.

VB (measured) =__________

VC (measured) =__________

VE (measured) =__________

VCE (measured) =_________

Q: How do the measured values compare to the calculated levels of Task 2(b)?

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