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2 Mosfet

The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes the MOSFET as a type of transistor used for amplifying or switching electronic signals. The MOSFET consists of a semiconductor material (such as silicon) with four terminals - gate, source, drain, and body/substrate. The document outlines the structure and working principle of the MOSFET, describing how a voltage applied to the gate terminal creates a conducting channel between the source and drain terminals. It also discusses MOSFET applications in areas such as digital circuits, power electronics, and audio amplification.

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Vimal Kunwar
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110 views38 pages

2 Mosfet

The document discusses the metal-oxide-semiconductor field-effect transistor (MOSFET). It describes the MOSFET as a type of transistor used for amplifying or switching electronic signals. The MOSFET consists of a semiconductor material (such as silicon) with four terminals - gate, source, drain, and body/substrate. The document outlines the structure and working principle of the MOSFET, describing how a voltage applied to the gate terminal creates a conducting channel between the source and drain terminals. It also discusses MOSFET applications in areas such as digital circuits, power electronics, and audio amplification.

Uploaded by

Vimal Kunwar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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METAL

OXIDE SEMICONDU
CTOR FIELD
EFFECT TRANSISTO
R
Contents
Transistor & Type

A transistor is a semiconductor device used


to amplify or switch electronic signals and electrical power. It is
composed of semiconductor material with at least three
terminals for connection to an external circuit.

• BJT
•FET

1. JFET
2. MOSFET
MOSFET Circuit

The metal–oxide–
semiconductor
field-effect
transistor (MOSFET,
MOS-FET, or MOS
FET) is a type
of transistor used
for amplifying or
switching
electronic signals.
MOSFET Symbol Circuit
MOSFET

A MOSFET (Metal Oxide Semiconductor Field Effect Transistor)

is a semiconductor device.

A MOSFET is most commonly used in the field of power electronics.

A semiconductor is made of manufactured material that acts neither

like a insulator nor a conductor.

Types
Structure of MOSFET
The BJT is a _______ device. The FET is a _______ device.

A) bipolar, bipolar
B) bipolar, unipolar
C) unipolar, bipolar
D) unipolar, unipolar
Which of the following terminals does not belong to the
MOSFET?
a) Drain
b) Gate
c) Base
d) Source
Schematic structure of
MOSFET
Working principle of MOSFET
The working principle of MOSFET depends up on the
MOS capacitor.
The MOS capacitor is the mainpart.
The semiconductor surface at below the oxide layer and
between the drain and source terminal can be inverted
from p-type to n-type by applying a positive or negative
gate voltagesrespectively.
When we apply positive gate voltage the holes present
beneath the oxide layer experience repulsive force and
theholesare pusheddownwardwiththesubstrate
Working principle of MOSFET
CMOS technology is used in developing which of the following?
a) microprocessors
b) microcontrollers
c) digital logic circuits
d) all of the mentioned
Choose the correct statement
(A) MOSFET is a uncontrolled device
(B) MOSFET is a voltage controlled device
(C) MOSFET is a current controlled device
(D) MOSFET is a temperature controlled device
Working principle of MOSFET
The depletion region is populated by the bound negative
charges.

The positive voltage also attracts electrons from the n+


source and drain regions in to the channel.

The electron reach channel is formed. Now, if a voltage is


applied between the source and the drain, current flows freely
between the source and drain gate voltage controls the
electrons concentration the channel.

Instead of positive if apply negative voltage a hole channel will


be formed beneath the oxide layer.
MOS transistors Symbols
D D

G G

S S Channel
NMOS Enhancement NMOS Depletion
D D

G G B

S S

PMOS Enhancement NMOS with


Bulk Contact
N and P channel of M O S F E T
In general, any MOSFET is seen to exhibit three operating regions viz.,
1.Cut-Off Region
Cut-off region is a region in which the MOSFET will be OFF as there will
be no current flow through it. In this region, MOSFET behaves like an
open switch and is thus used when they are required to function as
electronic switches.
2.Ohmic or Linear Region
Ohmic or linear region is a region where in the current IDS increases with
an increase in the value of VDS. When MOSFETs are made to operate in
this region, they can be used as amplifiers.
3. Saturation Region
In saturation region, the MOSFETs have their IDS constant inspite of
an increase in VDS and occurs once VDS exceeds the value of pinch-
off voltage VP. Under this condition, the device will act like a closed
switch through which a saturated value of IDS flows. As a result,
this operating region is chosen whenever MOSFETs are required to
perform switching operations.
n-channel Enhancement-type MOSFET
p-channel Enhancement-type MOSFET
Which type of static characteristics exhibit the relationship
between drain current and gate-to-source voltage for several
values of drain-to-source voltage?

a. Drain characteristics
b. Transfer characteristics
c. Both a & b
d. None of the above
Match the following FET behaviour with respective Drain
Characteristic Regions:

1. Resistor --------------------------------A) Breakdown Region


2. Constant-Current Source -------- B) Ohmic Region
3. Constant -Voltage Source ------- C) Pinch-off Region

a. 1-A , 2-C , 3-B


b. 1-C , 2-B , 3-A
c. 1-A , 2-B , 3-C
d. 1-B , 2-C , 3-A
n-channel Depletion-type MOSFET
Kind of MOSFET Region of Operation

Cut-Off Ohmic/Linear Saturation

n-channel
VGS < VT VGS > VT and VDS < VP VGS > VT and VDS > VP
Enhancement-type

p-channel VGS < -VT and VDS > - VGS < -VT and VDS < -
VGS > -VT
Enhancement-type VP VP

n-channel VGS > -VT and VDS < VGS > -VT and VDS >
VGS < -VT
Depletion-type VP VP

p-channel VGS < VT and VDS > - VGS < VT and VDS < -
VGS > VT
Depletion-type VP VP
Which of the following is (are) not an FET?
A) n-channel
B) p-channel
C) p-n channel
D) n-channel and p-channel
N and P channel of M O S F E T

If the MOSFET is an n-channel or nMOS FET, then the

source and drain are 'n+' regions and the body is a 'p' region.

If the MOSFET is a p-channel or pMOS FET, then the source

and drain are 'p+' regions and the body is a 'n' region.
M O S F E T Applications:

MOSFETs are used in digital integrated circuits, such as


microprocessors.

Used in calculators.

Used in memories and in logic CMOS gates.

Used as analog switches.

MOSFET devices are also applied in audio-frequency


power amplifiers for public address systems
M O S F E T Applications

• Used as amplifiers.

• Used in the applications of power electronics and switch


mode power supplies.

• MOSFETs are used as oscillators in radio systems.

• Used in automobile sound systems and in sound


reinforcement systems
What is the range of an FET’s input
impedance?
A) 10 Ω to 1 kΩ
B) 1 kΩ to 10 kΩ
C) 50 kΩ to 100 kΩ
D) 1 MΩ to several hundred MΩ
Single-type MOSFET switch
This analog switch uses a four-terminal simple, generally
enhancement mode, MOSFET of either P or N type.

In the case of an N-type switch, the body or back gate terminal


is connected to the most negative supply (usually GND in single
power supply systems) and the gate is used as the switch
control.

Whenever the gate voltage exceeds the source voltage by at


least a threshold voltage, the MOSFET conducts.
Single-type MOSFET switch
The higher the gate voltage with respect to the source,
the lower the resistance of the switch will be. An NMOS
switch passes all voltages less than (Vgate-Vtn).

When the switch is conducting, it typically operates in


the linear (or triode) region of operation, since the
source and drain voltages will typically be nearly equal.
Application

NMOS and PMOS turn on characteristics


Advancements of the MOSFET

The explosion of digital technologies has


pushed the advancement of MOSFET
technologies faster than any other Si transistor.
This has happened due to the MOSFET being
the prime building block of CMOS digital logic
circuits.

CMOS circuits are advantageous because they


allow virtually no current to pass through and
thus consume very little power.
Limitations of the MOSFET

Overheating is very much a concern when


considering today's integrated circuits contain
millions of transistors in a relatively small space.

Recently, the small size of MOSFETs has


created operational problems as producing such
tiny transistors is an enormous challenge,

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