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Analog Merged

The document discusses batteries and electrical concepts like voltage, current, resistance, and polarity. It provides diagrams and explanations of battery operation and characteristics like saturation, hysteresis, and discharge curves.

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Kaushik Nagoju
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0% found this document useful (0 votes)
79 views33 pages

Analog Merged

The document discusses batteries and electrical concepts like voltage, current, resistance, and polarity. It provides diagrams and explanations of battery operation and characteristics like saturation, hysteresis, and discharge curves.

Uploaded by

Kaushik Nagoju
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ar

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The PNP-ensfstorfs atype of-ansistor în
ohch one ntype matevic is dop ed ith two
P type malevfals t s a devBce that s Contolled

by-the cument Both the emtter and Collecte


CumentS were cotolled y Small amount o
baue cuent Tioo cnystal diodas ane Lonneced
back to lauk n PNP trassor
he EnRter baje diooda in the left gida of dioda
The cdlector b a e d o d a in u a Ygnt sica of diod,

ite

(e

PNP Tanstos

Constntion)
The emites and baue untionS coe tomdand biase
LOle h e toleto and kaue junttin 9 a e vevenje

t ased.1he tonoond biaued emitten atauts electn


TD-he aty, ausing Ument to tlos tsom
the
CmctHes to the Colleutor

N
he e&Hojpb fto
povide chasje Caens to
oievea ovan tompaud to baye,ha ei t t the
Dunnd biajed Ei ods-to SupPl isaluaus'
Ceene cariers lange number of
a

BCLye
The Baue
Omite [unction $ tomand
h iHe to ave lous YOiStakta
biasedailloaip
Due to
bcs of bage Collecto revase
ha ahin Vogistonc
suneionthe colle dorcireui

Collecto
he colletor
Ys the secHbn onthe
of the emitte thcet collects the oppoditesiola
ehag
LJorkyg

VcR
VEB
Because the emitt and buejumitions ane tomny

ed, the emita pUsh the hol ea în baye vgi on The


UHe cumeuet mada o f thoe holes.These elersong
mbined wth he electong when ay moued ito
Conduutn makoialoy ue. The
tupe Sem
-thn and doea not hae ch
mu
cuy istors ba^e. is
opna As eault a tus hole e donnline
a
9ust OF the hole
ith the eloutonf, and
moved to collelor Spaco changelayer. As
egult, the base Curemt davlopS

Reves Se bias is Ued to mneat the Cofles

base Reg'on he Collector ctseutg the holes


tra
Colleet aound the daplation Tegio)
Operating modis
Cutof Fy auutive, Satuetion, breakdown eaiono
Actiemad
his is Used
OpP direrons
as
Cumentamputer- Conneded ine
Cutepf
Both diodos age reve te btased.Tho
in off Stuto traneistors
inths hada
Saturetton meds
Both dioda avuin the
tornd based reans
On Switth
Breakdpw
ohan Collectar vDItaie excoids the: setlimitte
Colector diocle îs
dastinged dd the
Maceathan ge
ne
JC

Emitecurret
Bae urent
le-Io+Le A emitto =Ipe-1P
Je=Lpe tLnè Gumut
bitte cat dusto e g=veLowb incton of-
olurons and holw
fe=Colleltor twmet
cto ols
Lolleutor CLR t
911
23oy

RMsmma voltaae -220

m= Sx230
k 230R 22=32:53V
eorda
volteg
Vde m RL =32:53 0.36V
4
The peak ineaie votage oakalt wave
S
lee

emmen Kmltter eeqiguratiem N truneiater

Common emitter configuration of NPN transistor

Input voltage VBE


terminals
is applied between base and
emitter VCE is
and output voltage
applied across emitter and collector. The output
Current lC is taken across the emitter and
collector terminals. The input side is forward
biased and the output side is reverse biased.
Emitter base region acts like forward biased
diode and so the depletion region is very smal.
Emitter collector region acts like reverse biased
diode and the depletion region is large. The
input current IB is measured in uA because the
base region is very lightly doped.
Input Characteristics of Common Emitter
Configuration:
1OV

V20

n p u t charactensties common &mittercensguratien

Input characteristics of common emitter configuration

Input characteristics are the relationship


between the input current and the input voltage
keeping output voltage constant. Here the input
current is the base current 1B, input voltage is
base emitter voltage VBE and the output voltage
is collector emitter voltage VCE.
First the output voltage VCE is kept at zero and
the input voltage VBE is gradually increased and
the input current IB is noted. Then again the
output voltage VCE is increased like 10V, 20V
and kept constant and by increasing the input
voltage VBE, the input current IB is noted.
Output Characteristics of Common Emitter
Configuration:
far

t70

60uA

J0uA

ef

Output characteristicsefeommon Emitter ceagaratio

Output characteristics of Common Emitter Configuration

Output characteristics is the relationship


between the output current and the output
voltage keeping input current constant. Here the
values of output current IC and the output
voltage VCE is noted keeping input current IB
constant.
In active region when the output voltage is
increased there is very slight change in the
output voltage. The curve looks almost flat in
the active region. Cut off region is the region
where the input current is below zero. When
both the junctions are forward biased, it is in
saturation region.
Solution:

Vcc
Fig.5

Fig. 5 shows the required common emitter connection. The voltage drop across
RC(= I k2) is I volt.

1V
'c1&Q mA
Now

= 0.022 mA
he ConStutHon, operedron and
chonacheuiske behavia
Explin
6 o)
JFET/Mosf¬T
unde Vviou biaying Conditrou

mean Tuncron FET


JFET O clomied nh

Se T FET
two
Ay
channel T FET P Channd FET

h. P-ype FET
h-ype FÉT

Con struthon o N channel 1f¬T


Drainlo)
ZZZA

Scue (s)

mattnals
Take onduehoDuc
ho P
a N 4ype brStmiCondut
(htavily doped) and on loth sides
the N pe Semi
Conduor Make ohmit o n tath both p m a i als . one

is abeled a Cun d othev One labcled g.


got ei
short Cirtuüted Cund
nd ok ave in ternclly
Contath ct
Commenly cened k a G). make ohmic

one is
Semi Condutho
the top bottom N typ
efercd t Cu bYain the is reed

Soirte teminalu
Construhton
Pchennel1 FE
Drainto)

Sount u)
is imila t t a t
Constr utkton T FET
1 P honne invetd

Ckame JFET but the chont Coric C


TFET hou oll otwina Noton

) Soune ughWhch he
he Sounne a temina

enttr the be like emmikrin BT)


majonty Camier
Which the maori
throuR
)Drain The dvcun s temina

bev like Ceullechrin by1)


Coien lrave thi

) Gat ttee a indenclty Cenneetd,heavily doped


éaionk tohichorm uo p junHons
impusiy
ttke bcu in T)
The pate blqke ,Ahrus Which menby Come
4) Ckonnel

Opercuhion

Coue- lhen a>o Vos

When Ao oltene blan


cheunnel Conthtute P
Hee the P typt Geuk N ype
b'aud in
junchin T p junchon alwauy
alua everse 1FET
opesu on Revese biu is applicd e béctery applred by
Connett d bJuo eut & Soune
a butty voltae
temir
ormed Cu

Becau evese biu depletion leye


shown in y
is
N channe FET p type heavil dop ed So he
In deplem
egion eknd 4oocd

No
Ctpplitt (Voï:o) h depletron vegien
lhen Zero As the
the Ccnducivit beCme
Symmetrical
theuntron s intreaued, hrtk nes
CCroSS
yevene loiau
ciluo intraue
of deplehion Ovcun
deplehn 1 i*9

Surce

lhen Vo:0

Wlhen applrd nd s o
CAe-2 o Cand
Gnd Yoj
Yoi
applied t qake ie Vq: o)
When No
volt
Voltse
is

blw Soute & drein "The e ollouo from


applitd
Connel Consttude drain Cumet JpD
Source hrou h
4The channel YCaistante a Ypreiened

magntude dependi
on
Vp
acysd
he dvcun Cureat p produt e vsltage drop
to Saue junthim, thuy the
revene biuey he gak
which

iVas o) tohith is het


Pomed (even
deplehm eqo
Symmthica

on o channel nea ehcin &


T penetrubes deeper
>> Vu " S o ' \eveue bias
to the Scurte be (auue V
lu
an than Compat ourt
highe near
Dtoun

,
Gete

lhen
ure

Cae-3. appied
lhen voltqe b
Cpplked behoeen
the dhoin Aoune oith
7Prein
a
ecteyNp Ahe
ffouo
rom Sourte to drein

thoh the nonot


Chaun nel exis iskng blo
the depleken eaim

Thà Cens tituku the Source


dhtun Curent 1p,i
Conven tonal dite ction is JfET lth pintheff reaim
indituk d homdran fo soue
The Vcilue dhain Curreni maimun tlhen no exkenad

voltqt isplied bfo the gee & oute

lhen V k otne Veolte) isincveayed beyond 2t


the deplehen rqioný on widened. Thi redues to tthive
the
theefore Control the flao g dein
ehonnel
with 4 the

Curen
throu this clannel.
Yeahed at
WWhen Va inteayed futher,d ge
coalles
eauh they. T t i
whith tuwe
tuoo depletim Yegionytouth
pinth off 1im.is1e duces T t 2ero.

whith Ih:o (aMed


a
Gae t BoUne vol4-e
pih volte
chavacterstu FET FEr Theve wo importent charceerrshes
FET
Trunser chenutki'sha
i Druin chavatk inu

Dicin chaya ckerishu!


velimsip bl Vos & Tp In
tiu shows the
c h a r a tkeris
prcin w C oContide
niides
Let
Le
drasn chara tei'stu
explain tpftal
erder
the Cckr ve with Vu0V inthott
Avalanck
ohmi
bvcek dood Seutuuehm

dou

Vs o5
VG

knee
oink

Trans ckavatriha,
to d4teren
relckimAlip T V
The Curve sho the

Vuluts Vps Autkle


B utble
Somt
Some
dvain t %ounte voltoe t
fint
fin t cdjut te value at
at
the in Amall swkhl yalue
ValueThen intvease V
decun Cunea
Velues 9
each sk TeCod he Concaond
cach s kp
a
mavmum
lhen 0 then
thannel htidh wdueed
the
s Cocnuauy intcang h
X I
pinch qff t t
OCCur h
when V -"

Vu
Tnpu & utput claateiu 1-

Va

Vp15
Vel3

Vps
Nw
Dvaintleae tonu
Thama thaxbtkunhu

EfoDrain CUntab

Llhac p Pinth volfee


o Mavmum dain Cuea

Volte blo Gat t Boune

Dvaun Reistnte Ro

oukpu Voltae
Cune

Tvanston duetane
Cure

Inpud vslte
MosFET
nede by eing a ve hin lauen 3
FET
makrd Suth umi nium
Co lm) Aemitem due h
deleche laye to koon,
depesite d ove,

-Field e
Pef thonii)
Mes FET Melad 6xide Atm tmdutov
Mos FET
shee a hwe
Enhanement MoufET

) Depte timn MOS FE

We Coegoise MosfET int toype


comel En hantemeat Mes FE T
P
N chonnel En hantemew Ma fE

choannel Mo1fEr
3 P beplem
4 N channt! Depletn MafeT

prinegle
freld o Crsi inudat,
B capplying thansters elechic

in Semi Con ductinq materid, -the thickne


deposikd abe
makrial
hente the CA'tunte aAcmi Con ducig
Contrelled
-ield
MosfET he Controllins elech
In deple tin
avulable fo
rdutes te lo 9 majoty c
e CCie
Enhoncemeat Ms fEr Copplirat
Conduhin. Llhere i n
Canier
inccoe In the majony
elecitcicfietd CcuC an

Conducti i o u -aniistor
derit the
nkanem ent MosfE1

indted
sio
l cluanne

ype ubhak

N-channel Enhante meu Mos FE£T

B(Aubitae

N channe Enkantement Mosf¬T


P CLannel Erhantne MovfE=
Cons hutkm
N Ckannel Erhacement
ho
Continuow cheunne
MosFET,Therè is
this Con ditim indiceed ky bhoken
line n he
kymbel
le tak Bu then do pe d with tiveden imik
make it P pe.le talled
impa
it
au Aubsthate
Two
pe Cae
Ceded ee will
Foy me d beJunthim E, deplehm

one n
pe une4 the,
ther is dhain .They will ciko
hau metal Contact
teminal is
no dorty (ennee d a r it reked
Gat
Ove h » mtta ntou} plase4
aveythin ae Sio
by
oo0A
itis clso cedted
Sio with

Contro bves u a c e .
havin
Cntuct a eb,emirad n plokr a
Caider netl
Coposiw
Capacitor Sie
dielechic bJ plak 7
a cne
plak 4
metd Contach a Gak emina
Cont' opiter
Sioi
deleche pleses
Capacitar hen
attumalak near uace
One
NG
yVq lew heles be

Tmmovchle ion takes plare


un tonvein
puuhe d deun

y Le leh-ype Zvusin, Va >o)


Voy igh n-fyp
ule cheng p p + ny
oue t Tnversien mort +
Con duchve channel bmakr 9k

fron ed channel dep ineuea

V A 5lidh°9 lannel
one Point V pattulav veltege
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