Current Mode PWM Controller With Frequency Shuffling ME8202

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com13509685286 ME8202
Current Mode PWM Controller With Frequency Shuffling ME8202
General Description Features
ME8202 is a highly integrated current mode PWM ●Extended Burst Mode Control For Improved Efficiency and
control IC optimized for high performance, low Minimum Standby Power Design
standby power and cost effective offline flyback
●Audio Noise Free Operation
converter applications. PWM switching frequency at
●External Programmable PWM Switching Frequency
normal operation is externally programmable and
●Internal Synchronized Slope Compensation
trimmed to tight range. At no load or light load
condition, the IC operates in extended ‘burst mode’ ●Low VDD Startup Current (3μA) and Low Operating Current

to minimize switching loss. Lower standby power and (1.8mA)


higher conversion efficiency is thus achieved.VDD ★External programmable over temperature protection (OTP)

low startup current and low operating current ★With or without On-chip VDD OVP for system OVP
contribute to a reliable power on startup design with ★Under Voltage Lockout with Hysteresis (UVLO)
ME8202. A large value resistor could thus be used in
★Gate Output Maximum Voltage Clamp (16V)
the startup circuit to minimize the standby power. The
★ Line Input Compensated Cycle-by-Cycle Over-current
internal slope compensation improves system large
Threshold Setting For Constant Output current Limiting Over
signal stability and reduces the possible
subharmonic oscillation at high PWM duty cycle Universal Input Voltage Range(OCP).

output. Leading-edge blanking on current sense ★Over load Protection (OLP)

input removes the signal glitch due to snubber circuit ● Available in SOP8 and DIP8 package
diode reverse recovery and thus greatly reduces the Typical Application
external component count and system cost in the
Offline AC/DC flyback converter for
design. ME8202 offers complete protection coverage
 Battery Charger
with automatic self-recovery feature including
 PC/TV/Set-Top Box Power Supplies
Cycle-by-Cycle current limiting (OCP), over load
protection (OLP), VDD over voltage clamp and under  Laptop Power Adaptor

voltage lockout (UVLO). The Gate-drive output is  Open-frame SMPS


clamped at 16V to protect the power MOSFET. In
SelectionGuide
ME8202,OCP threshold slope is internally optimized
to reach constant output power limit over universal
AC input range. Excellent EMI performance is
achieved with frequency shuffling technique together
with soft switching control at the totem pole gate
drive output. Tone energy at below 20KHZ is
minimized in the design and audio noise is eliminated
during operation.

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ME8202
Pin Configuration

The ME8202 is offered in SOP8 and DIP8 packages shown as below.

SOP8 DIP8

PIN Assignments

Pin Num. Symbol Description


1 GND Ground
Feedback input pin. The PWM duty cycle is determined by voltage level into this pin
2 FB
and current-sense signal level at PIN6.
Connected through a large value resistor to rectified line input for startup IC supply
3 VIN
and line voltage sensing.
Internal Oscillator frequency setting pin. A resistor connected between RI and GND
4 RI
sets the PWM frequency.
5 RT Temperature sensing input pin. Connected through a NTC resistor to GND.
6 SENSE Current sense input pin. Connected to MOSFET current sensing resistor node.
7 VDD Chip DC power supply pin.
8 GATE Totem-pole gate drive output for the power MOSFET.

Absolute Maximum Ratings


Parameter Range Unit

VDD/VIN DC Supply Voltage 30 V


VDD Zener Clamp VoltageNote VDD_Clamp+0.1V V
VDD DC Clamp Continuous Current 10 mA
VFB ,VSENSE ,VRI,VRT (Voltage at FB,SENSE,RI,RT to GND) -0.3 to 7 V
Min/Max Operating Junction Temperature TJ -20 to 125 °C

Min/Max Storage Temperature Tstg -55 to 150 °C

SOP8 150
RθJA thermal Resistance °C/W
DIP8 90

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ME8202
Caution: The absolute maximum ratings are rated values exceeding which the product could suffer physical damage.

These values must therefore not be exceeded under any conditions.


Note: VDD_Clamp has a nominal value of 35V.

Recommended Operating Condition

Parameter Range Unit


VDD Supply Voltage 12 to 23 V
RI Resistor Value 24 to 31 KΩ
TA Operating Ambient Temperature -20 to 85 °C

ESD Information
Symbol parameter Test conditon Min. Typ. Max. Unit
Human body model on all pins except
HBMNote MIL_STD - 2.5 - KV
VIN and VDD

Block Diagram

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ME8202
Electrical Characteristics(TA = 25°C,VDD=16V,RI=24KΩ, if not otherwise noted)
Symbol Parameter Test Conditions Min Typ. Max Unit
Supply Voltage (VDD)
VDD=15V,
IVDD_Startup VDD Start up Current Measure current - 3 10 μA
into VDD
IVDD_Operation Operation Current VFB=3V - 1.8 - mA
UVLOON VDD Under Voltage Lockout Enter 9.5 10.5 11.5 V
VDD Under Voltage Lockout Exit
UVLOOFF 15.5 16.5 17.5 V
(Recovery)
VDD_Clamp VDD Zener Clamp Voltage IVDD = 5 mA - 35 - V
OVPON VDD Over voltage protection enter 23.5 25 26.5 V
OVPOFF VDD Over voltage protection exit(recovery) 21.5 23 24.5 V
OVPHys OVP Hysteresis OVPON-OVPOFF - 2 - V
TD_OVP VDD OVP debounce time - 80 - μS
Feedback Input Section(FB Pin)
AVCS PWM Input Gain ΔVFB /ΔVCS - 2.8 - V/V
VFB_Open VFB Open Loop Voltage - 5.8 - V
Short FB pin to
IFB_Short FB pin short circuit current GND, measure - 0.8 - mA
current
VTH_0D Zero Duty Cycle FB Threshold Voltage - 0.95 V
VTH_BM Burst mode FB threshold voltage - 1.7 - V
VTH_PL Power Limiting FB Threshold Voltage - 4.4 - V
TD_PL Power limiting Debounce Time - 80 - mS
ZFB_IN Input Impedance - 7.2 - KΩ
Current Sense Input(Sense Pin)
T_blanking Leading edge blanking time - 250 - nS
ZSENSE_IN Input Impedance - 30 - KΩ
TD_OC Over Current Detection and Control Delay CL=1nF at GATE - 120 - nS
Current Limiting Threshold at No
VTH_OC_0 IVIN=0μA 0.80 0.9 0.95 V
Compensation
Current Limiting Threshold at
VTH_OC_1 IVIN=150μA - 0.81 - V
Compensation
Oscillator
FOSC Normal Oscillation Frequency 60 65 70 KHz
∆f_Temp Frequency Temperature Stability -20°C to 100 °C 2 %
∆f_VDD Frequency Voltage Stability VDD = 12-25V 2 %
RI_range Operating RI Range 12 24 60 KΩ

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ME8202
V_RI_open RI open load voltage - 2 - V
F_BM Burst Mode Base Frequency - 22 - KHz
DC_max Maximum duty cycle 75 80 85 %
DC_min Minimum duty cycle - - 0 %
Gate Drive Output
VOL Output Low Level IO = -20 mA - - 0.3 V
VOH Output High Level Io = 20 mA 11 - - V
VG_Clamp Output Clamp Voltage Level VDD=20V - 16 - V
T_r Output Rising Time CL = 1nF - 120 - nS
T_f Output Falling Time CL = 1nF - 50 - nS
Over Temperature Protection
I_RT Output current of RT pin - 70 - μA
VTH_OTP OTP Threshold 1.015 1.065 1.115 V
VTH_OTP_off OTP Recovery threshold voltage - 1.165 - V
TD_OTP OTP De-bounce time - 100 - μS
V_RT_Open RT Pin open voltage - 3.5 - V
Frequency Shuffling
Frequency Modulation range /Base
∆f_OSC RI=100KΩ -3 -- 3 %
frequency
f_shuffling Shuffling Frequency RI=24KΩ - 32 Hz

Operation Description

The ME8202 is a highly integrated PWM controller capacitor to provide a fast startup and low power

IC optimized for offline flyback converter applications . dissipation solution.

The extended burst mode control greatly reduces the ●Operating Current

standby power consumption and helps the design The Operating current of ME8202 is low at

easily meet the international power conservation 1.8mA. Good efficiency is achieved with ME8202 low

requirements. operating current together with extended burst mode

●Startup Current and Start up Control control features.

Startup current of ME8202 is designed to be very ●Frequency shuffling for EMI improvement

low so that VDD could be charged up above UVLO The frequency Shuffling/jittering (switching

(exit) threshold level and device starts up quickly. A frequency modulation) is implemented in ME8202.

large value startup resistor can therefore be used to The oscillation frequency is modulated with a random

minimize the power loss yet provides reliable startup in source so that the tone energy is spread out. The

application. For a typical AC/DC adaptor with spread spectrum minimizes the conduction band EMI

universal input range design, a 2 MΩ, 1/8 W startup and therefore reduces system design challenge.
resistor could be used together with a VDD

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ME8202
●Extended Burst Mode Operation ●Current Sensing and Leading Edge Blanking
At zero load or light load condition, majority of the Cycle-by-Cycle current limiting is offered in
power dissipation in a switching mode power supply is ME8202 current mode PWM control. The switch

from switching loss on the MOSFET transistor, the core current is detected by a sense resistor into the sense

loss of the transformer and the loss on the snubber pin. An internal leading edge blanking circuit chops

circuit. The magnitude of power loss is in proportion to off the sense voltage spike at initial MOSFET on
state due to Snubber diode reverse recovery so that
the number of switching events within a fixed period of
the external RC filtering on sense input is no longer
time. Reducing switching events leads to the reduction
required. The current limit comparator is disabled
on the power loss and thus conserves the energy.
and thus cannot turn off the external MOSFET during
ME8202 self adjusts the switching mode according to
the blanking period. PWM duty cycle is determined
the loading condition. At from no load to light/medium
by the current sense input voltage and the FB input
load condition, the FB input drops below burst mode
voltage.
threshold level (1.8V). Device enters Burst Mode ●Internal Synchronized Slope Compensation
control. The Gate drive output switches only when Built-in slope compensation circuit adds voltage
VDD voltage drops below a preset level and FB input is ramp onto the current sense input voltage for PWM
active to output an on state. Otherwise the gate drive generation. This greatly improves the close loop

remains at off state to minimize the switching loss thus stability at CCM and prevents the sub-harmonic

reduce the standby power consumption to the greatest oscillation and thus reduces the output ripple voltage.

extend. The nature of high frequency switching also ●Gate Drive


ME8202 Gate is connected to an external
reduces the audio noise at any loading conditions.
MOSFET gate for power switch control. Too weak the
●Oscillator Operation
gate drive strength results in higher conduction and
A resistor connected between RI and GND sets the
switch loss of MOSFET while too strong gate drive
constant current source to charge/discharge the
output compromises the EMI. A good trade-off is
internal cap and thus the PWM oscillator frequency is
achieved through the built-in totem pole gate design
determined. The relationship between RI and switching
with right output strength and dead time control. The
frequency follows the below equation within the low idle loss and good EMI system design is easier to
specified RI in KΩ range at nominal loading operational achieve with this dedicated control scheme. An
condition. internal 16V clamp is added for MOSFET gate
protection at higher than expected VDD input.

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ME8202
●Over Temperature Protection helps to compensate the increased output power
A NTC resistor in series with a regular resistor should
limit at higher AC voltage caused by inherent
connect between RT and GND for temperature sensing
Over-Current sensing and control delay. A constant
and protection.NTC resistor value becomes lower when
output power limit is achieved with recommended
the ambient temperature rises. With the fixed internal
OCP compensation scheme on ME8202.
current IRT flowing through the resistors, the voltage at RT
At overload condition, FB voltage is biased higher.
pin becomes lower at high temperature. The internal OTP
When FB input exceeds power limit threshold value
circuit is triggered and shutdown the MOSFET when the
for more than TD_PL, control circuit reacts to shut
sensed input voltage is lower than VTH_OTP.
down the output power MOSFET. Similarly, control
●Protection Controls circuit shutdowns the power MOSFET when an over
Good power supply system reliability is achieved with
temperature condition is detected. ME8202 resumes
its rich protection features including Cycle-by-Cycle
the operation when temperature drops below the
current limiting (OCP), Over Load Protection (OLP), over
hysteresis value. VDD is supplied by transformer
temperature protection(OTP), on-chip VDD over voltage
auxiliary winding output. It is clamped when VDD is
protection (OVP, optional), and Under Voltage Lockout
higher than threshold value. The power MOSFET is
(UVLO).
shut down when VDD drops below UVLO limit and
The OCP threshold value is self adjusted lower at
device enters power on start-up sequence thereafter.
higher current into VIN pin. This OCP threshold slope

adjustment

Typical Performance Characteristics

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ME8202

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ME8202
TYPICAL APPLICATION

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ME8202
Packaging Information
Package type:DIP8 Unit:mm(inch)

Dimension (mm) Dimension (Inches)


Character
Min Max Min Max

A 6.200 6.600 0.244 0.260

B 9.000 9.400 0.354 0.370

C 7.620(Typ.) 0.300(Typ.)

D 3.200 3.600 0.126 0.142

E 3.000 3.600 0.118 0.142

a 0.360 0.560 0.014 0.022

b 1.524(Typ.) 0.060(Typ.)

c 2.54(Typ.) 0.100(Typ.)

c1 0.204 0.360 0.008 0.014

e 0.510(Min) 0.020(Min)

 00 150 00 150

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ME8202
Package type:SOP8 Unit:mm(inch)

Dimension (mm) Dimension (Inches)


Character
Min Max Min Max

A 1.350 1.750 0.053 0.069

A1 0.1 0.3 0.004 0.012

B 1.27(Typ.) 0.05(Typ.)

b 0.330 0.510 0.013 0.020

D 5.8 6.2 0.228 0.244

E 3.800 4.000 0.150 0.157

F 4.7 5.1 0.185 0.201

L 0.675 0.725 0.027 0.029

G 0.32(Typ.) 0.013(Typ.)

R 0.15(Typ.) 0.006(Typ.)
° °
1 7 7
° °
 8 8

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ME8202

 The information described herein is subject to change without notice.


 Nanjing Micro One Electronics Inc is not responsible for any problems caused by circuits or diagrams
described herein whose related industrial properties, patents, or other rights belong to third parties.
The application circuit examples explain typical applications of the products, and do not guarantee the
success of any specific mass-production design.
 Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Nanjing Micro One Electronics Inc is strictly prohibited.
 The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any
apparatus installed in airplanes and other vehicles, without prior written permission of Nanjing Micro
One Electronics Inc.
 Although Nanjing Micro One Electronics Inc exerts the greatest possible effort to ensure high quality
and reliability, the failure or malfunction of semiconductor products may occur. The user of these
products should therefore give thorough consideration to safety design, including redundancy,
fire-prevention measures, and malfunction prevention, to prevent any accidents, fires, or community
damage that may ensue.

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