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Igbt/Power Mosfet Gate Drive Photo-IC Couplers TLP250 (INV) /TLP250F (INV)

The document discusses IGBT/power MOSFET gate drive photocouplers called the TLP250(INV) and TLP250F(INV). The photocouplers are designed to drive IGBT and power MOSFET gates directly and have features like high peak output current and fast response speed. They are housed in compact packages to simplify circuit design and improve reliability.
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0% found this document useful (0 votes)
71 views8 pages

Igbt/Power Mosfet Gate Drive Photo-IC Couplers TLP250 (INV) /TLP250F (INV)

The document discusses IGBT/power MOSFET gate drive photocouplers called the TLP250(INV) and TLP250F(INV). The photocouplers are designed to drive IGBT and power MOSFET gates directly and have features like high peak output current and fast response speed. They are housed in compact packages to simplify circuit design and improve reliability.
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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IGBT/Power MOSFET

Gate Drive Photo-IC Couplers


TLP250(INV)/TLP250F(INV)
NEW PRODUCT GUIDE
IGBT / POWER MOSFET GATE DRIVE
PHOTO-IC COUPLERS
TLP250 (INV) / TLP250F (INV)

The Toshiba TLP250 (INV) and TLP250F (INV) are 8-pin


photocouplers designed exclusively for use in IGBT
(isolated-gate bipolar transistor) drive applications.
These photocouplers are capable of driving the gates of
IGBTs and power MOSFETs directly (for which the
addition of a gate resistor is necessary).
The photo-IC couplers are housed in compact packages.
This, combined with their ability to drive IGBTs and power
MOSFETs directly, makes system design easier, allows
simpler circuit configurations and improves system
reliability.

Applications Pin Configuration


● IGBT gate drive
● Power MOSFET gate drive
1 8
● Inverter
● Servo motor control
● UPS 2 7
● Induction heater

3 6

Features
4 5
● Input threshold current: IF = 5 mA (max)
● Supply voltage: 10 V ~ 35 V 1: NC 5: GND
● Output peak current: 2.0 A (max) 2: LED ANODE 6: VO (output)
3: LED CATHODE 7: VO
● Response speed: 0.5 µs (max) 8: VCC
4: NC
● l tpHL– tpLH l : 0.4 µs (max)
● Isolation voltage: 2500 Vrms (min)
Truth Table
● UL-recognized
● D4 option type: VDE-approved Tr1 Tr2
LED ON ON OFF
Note: INPUT OFF OFF ON
If a VDE0884-approved device is required,
please specity option D4.
2
Peak output current — frequency

TLP250 (INV)
3 Maximum ratings

2.5
TLP250
Peak output current (A)

Maximum ratings
2

1.5

0.5
TLP250 (INV) & TLP250
Maximum ratings
0
1 10 100
Frequency (kHz)

● TLP250 (INV) vs. TLP250


Parameter Symbol Conditions TLP250 (INV) TLP250 Unit

IF = 10 mA, V8-6 = 4 V 1.0 0.5


H-level Output Current IOPH A
VCC = 30 V (min) (min)

IF = 0, V6-5 = – 2.5 V 1.0 0.5


L-Level Output Current IOPL A
VCC = 30 V (min) (min)

Switching Time Dispersion between l tpHL– RL = 20 Ω, CL = 10 nF


0.45 —
µs
ON and OFF tpLH l (max) (max)

Common Mode Transient Immunity VCM = 1000 Vp-p, IF = 8 mA, 15,000 5,000
CMH V / µs
for High-Level Output VCC = 30 V, Ta = 25 °C (min) (min)

Common Mode Transient Immunity VCM = 1000 Vp-p, IF = 0 mA, 15,000 5,000
CML
VCC = 30 V, Ta = 25 °C V / µs
for Low-Level Output (min) (min)

● UL-recognized: UL1577, File No. E67349


● Option (D4) type
VDE-approved: DIN VDE0884/16.92, Certificate No. 76823

TLP250 TLP250F* TLP250 TLP250F*


Maximum Operating Insulation Voltage 630 Vpk 840 Vpk Creepage distance 6.4 mm 8.0 mm
Highest Permissible Over Voltage 4000 Vpk 6000 Vpk Clearance 6.4 mm 8.0 mm

Note:
When a VDE0884-approved device is required, please specify option D4.
* Making an application
3
Absolute Maximum ratings (Ta = 2.5°C)

Parameter Symbol Rating Unit


Forward Current IF 20 mA
LED

Forward Current Derating (Ta ≥ 70°C) ∆IF / ∆Ta – 0.36 mA / °C


Reverse Voltage VR 5 V

H Peak (PW ≤ 2.5 µs, f = 15 kHz) (Note 2) – 1.5


IOPH A
Output Current (PW ≤ 1 µs, f = 15 kHz) (Note 2) – 2.0

L Peak (PW ≤ 2.5 µs, f = 15 kHz) (Note 2) + 1.5


IOPL A
Detector

Output Current (PW ≤ 1 µs, f = 15 kHz) (Note 2) + 2.0


Output Voltage VO 35 V
Output Voltage Derating (Ta ≥ 70°C) ∆VO / ∆Ta – 0.73 V / °C
Supply Voltage VCC 35 V
Supply Voltage Derating (Ta ≥ 70°C) ∆VCC / ∆Ta – 0.73 V / °C
Operating Frequency (Note 3) f 25 kHz
Operating Temperature Range Topr – 20 ~ 85 °C
Storage Temperature Range Tstg – 55 ~ 125 °C
Isolation Voltage (AC, 1 minute, R/H ≤ 60%, Ta = 25°C) BVs 2500 Vrms

Note 2: Exponential Waveform


Note 3: Exponential Waveform, IOPH ≤ –1.0 A (≤ 2.5 µs), IOPL ≤ +1.0 A (≤ 2.5 µs)
Note 5: A ceramic capacitor (0.1 µF) should be connected between pin 8 and pin 5 to stabilize the operation of the high-gain linear amplifier.
Failure to provide this bypass may impair the switching properties. The total lead length between capacitor and coupler should not
exceed 1 cm.

Electrical Characteristics (Ta = –20° ~ 70°C unless otherwise specified)

Parameter Symbol Conditions Min Typ. Max Unit


Input Forward Voltage VF IF = 10 mA, Ta = 25°C — 1.6 1.8 V
Temperature Coefficient of Forward Voltage ∆VF / ∆Ta IF = 10 mA — – 2.0 — mV / °C
Input Reverse Voltage IR VR = 5 V, Ta = 25°C — — 10 µA
IF = 10 mA, V8-6 = 4 V – 0.5 – 1.5 —
H Level IOPH
VCC = TLP250 (INV) – 1.0 – 1.5
Output Current A
30 V
(*1) IF = 0, V6-5 = –2.5 V 0.5 2 —
L Level IOPL
TLP250 (INV) 1.0 2
H Level VOH VCC = 15 V IF = 5 mA 11 12.8 —
Output Voltage VEE = –15 V V
L Level VOL RL = 200 Ω VF = 0.8 V — – 14.2 – 12.5
H Level ICCH IF = 10 mA — 7 11
Supply Current VCC = mA
L Level ICCL 30 V VF = 0.8 V — 7.5 11

IFLH VCC1 = +15 V, VEE1 = –15 V


Threshold Input Current Output L H — 1.2 5 mA
RL = 200 Ω, VO > 0 V
VCC1 = +15 V, VEE1 = –15 V
Threshold Input Voltage Output H L VFHL 0.8 — — V
RL = 200 Ω, VO < 0 V
Supply Voltage VCC 10 — 35 V
* All typical values are at Ta = 25 °C (*1): Duration of I/O time 50 µs
4
Switching Characteristics (Ta = –20° ~ 70°C unless otherwise specified)

Parameter Symbol Conditions Min Typ. Max Unit


L H tpLH 0.05 0.15 0.5
Propagation Delay Time IF = 8 mA
H L tpHL 0.05 0.15 0.5
VCC = 15 V, VEE = –15 V, µs
Switching Time Dispersion between l tpHL– RL = 20 Ω, CL = 10 nF — — 0.45
ON and OFF tpLH l

Common Mode Transient Immunity for VCM = 1000 Vp-p, IF = 8 mA,


CMH 15,000 — — V / µs
High-Level Output VCC = 30 V, Ta = 25 °C

Common Mode Transient Immunity for VCM = 1000 Vp-p, IF = 0 mA,


CML
VCC = 30 V, Ta = 25 °C
15,000 — — V / µs
Low-Level Output

TLP251

TLP250

TLP250 (INV)

TLP251 + Outer Buffer

50 A 100 A 150 A 200 A


IGBT output current

5
TLP250 TLP250, TLP250 (INV)
IOPH, IOPL — Ta
VCC — Ta TLP250 (INV): Pulse width 1.0 µs, f = 15 kHz
TLP250 : Pulse width 1.0 µs, f = 15 kHz
3

Allowable peak output current


Allowable power supply voltage

IOPH, IOPL (A)


30 TLP250 (INV)
2
VCC (V)

20
TLP250
1
10

0 0
–20 0 20 40 60 80 100 –20 0 20 40 60 80 100
Ambient temperature Ta (°C) Ambient temperature Ta (°C)

TLP250, TLP250 (INV) TLP250, TLP250 (INV)


VOL — IOL VOH — IOH
2 –5
VCC = 30 V VCC = –30 V
1.8 IF = 0 – 4.5 IF = 10 mA
High-level output voltage VOH (V)

Ta = 25°C Ta = 25°C
Low-level output voltage VOL (V)

1.6 –4
1.4 – 3.5
1.2 –3
1 – 2.5
0.8 –2
0.6
– 1.5
0.4
–1
0.2
– 0.5
0
0 0.1 0.2 0.3 0.4 0.5 0
0 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5
Low-level output current IOL (A)
High-level output current IOH (A)

8
1 8
1
0.1 µF V
CC
VV IOH
IF OH
IOL VCC

4 V VCL 4
0.1 µF

6
TLP250 (INV) TLP250

IOPH, IOPL —VCC IOPH, IOPL —VCC


2.0

Peak output current IOPH,IOPL (A)


2.0
Peak output current IOPH,IOPL (A)

1.5 f = 35 kHz 1.5 f = 35 kHz

45 kHz 45 kHz
1.0 55 kHz 1.0 55 kHz

0.5 0.5
Ta = 50˚C Ta = 50°C

0 10 20 30 40 0 10 20 30 40
Power supply voltage VCC (V) Power supply voltage VCC (V)

IOPH, IOPL —VCC IOPH, IOPL —VCC


2.0
Peak output current IOPH,IOPL (A)

2.0
Peak output current IOPH,IOPL (A)

f = 15 kHz f = 15 kHz
1.5 1.5

1.0 1.0
25 kHz 25 kHz
35 kHz 35 kHz
45 kHz 45 kHz
0.5 0.5
Ta = 70°C Ta = 70°C

0 10 20 30 40 0 10 20 30 40
Power supply voltage VCC (V) Power supply voltage VCC (V)

IOPH, IOPL —VCC IOPH, IOPL —VCC


2.0
Peak output current IOPH,IOPL (A)

2.0
Peak output current IOPH,IOPL (A)

1.5 1.5
25 kHz 25 kHz
f = 15 kHz f = 15 kHz

1.0 1.0
35 kHz 35 kHz

0.5 0.5

Ta = 85°C Ta = 85°C

0 10 20 30 40 0 10 20 30 40
Power supply voltage VCC (V) Power supply voltage VCC (V)

7
OVERSEAS SUBSIDIARIES AND AFFILIATES 990219(H)

Toshiba America Toshiba Electronics Europe GmbH Toshiba Electronics Asia, Ltd.
Electronic Components, Inc. Düsseldorf Head Office Hong Kong Head Office
Headquarters-Irvine, CA Hansaallee 181, D-40549 Düsseldorf Level 11, Top Glory Insurance Building,
9775 Toledo Way, Irvine, Germany Grand Century Place,
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Tel: (02)589-4334 Fax: (02)589-4302
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Kyeongbuk, Korea
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Irvine, CA
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a Xinhua Avenue, Chengdu, 610017, China
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Tel: (91)660-6700 Fax:(91)660-6799 Tel: (028)675-1773 Fax: (028)675-1065
Tel: (714)453-0224 Fax: (714)453-0125
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GA 30092, U.S.A.
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TX 75081, U.S.A.
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401 Edgewater Place, Suite #360, Wakefield, Tel: (0592)562-3798 Fax: (0592)562-3799
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Tel: (278)5252 Fax: (271)5155, (270)6056
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Tel: (2)501-1635 Fax: (2)501-1638
Taiwan R.O.C.
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(Malaysia)Sdn. Bhd. Kaohsiung Office
Kuala Lumpur Head Office 16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd.,
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Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya, Tel: (07)222-0826 Fax: (07)223-0046
Selangor Darul Ehsan, Malaysia
Tel: (3)731-6311 Fax: (3)731-6307 Toshiba Display Devices
(Thailand) Co., Ltd.
Penang Office
142 Moo 5, Bangkadi Industrial Park,
Suite 13-1, 13th Floor, Menard Penang Garden,
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42-A, Jalan Sultan Ahmad Shah,
Tel: (2)501-1200 Fax: (2)501-1209
100 50 Penang, Malaysia
Tel: 4-226-8523 Fax: 4-226-8515

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products.
No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices
in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility
of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction
or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs,
please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products
Electronic Devices Sales & Marketing Group
specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability 1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, Japan
Handbook. Tel: (03)3457-3405 Fax: (03)5444-9324

Gallium arsenide (GaAs) is a substance used in some of the products described in this documents. GaAs dust and fumes are toxic. Do not break, cut or pulverize the products, or use chemicals to dissolve them.
When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.

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©1999 TOSHIBA CORPORATION
Printed in Japan

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