EXPERT COACHING ACADEMY

CHAPTER -14 SEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS [9M]

Band theory of solids: Semiconductors:

The range of energies possessed by an electron in any
orbit of an atom in a solid is called energy band.
There are three energy bands in solids. They are
Valence band (V.B.):
❖ The energy band formed by a series of energy levels
containing valence electrons is known as valence band.
❖ At 0 K, the energy levels in valence band are completely
filled. ❖ A semiconductor is an element having electrical
Conduction band (C.B.): properties between those of a conductor and an insulator.
❖ The energy band formed by a series of energy levels ❖ Semiconductors have electrical conductivity less than
containing few free electrons is known as conduction conductors but more than insulator.
band. ❖ In semiconductors, the energy gap between conduction
❖ At 0 K, the energy levels in conduction band are band and valence band is less than 1eV.
completely empty. ❖ In semiconductors, at some temperature above 0 K,
Forbidden energy gap or forbidden energy band (Eg): electrons will have enough thermal energy to jump from
❖ The minimum energy required to shift electron from valence band to conduction band and causes conductivity.
valence band to conduction band is called forbidden ❖ As the temperature of a semiconductor is increased, more
energy band or forbidden energy gap. and electrons from valence band acquire sufficient
Classification of solids on the basis of band theory: energies to cross over to conduction band, thereby
Based on forbidden energy gap, solids are classified increasing the conductivity of semiconductor.
as conductors, insulators, and semiconductors. ❖ Thus conductivity of a semiconductor increases with rise
Conductors: in its temperature. Thus semiconductors have negative
temperature coefficient of resistance.
Note:
❖ The highest energy level in the conduction band occupied
by electrons in a crystal at absolute zero is called the Fermi
level. The energy corresponding to this level is called
Fermi energy.
❖ Electrical conduction takes place when electrons acquire
❖ Conductors are those substance which easily allow the energy beyond the Fermi energy.
passage of free electrons through them.
❖ For a conductor, the Fermi level lies in the middle of
❖ Its valence band and conduction band overlap each other.
conduction band.
❖ Due to this even on applying slight p.d. across a
❖ For an insulator, the Fermi level lies at the top of the
conductor, conductivity takes place. Hence conductivity is
valence band.
very large.
❖ For a semiconductor, the Fermi level lies in the middle of
Insulators: the forbidden energy band. This is because, at room
temperature some of the electrons near the top of the
valence band can acquire enough energy to overcome the
gap enter the conduction band.
Classification of semiconductors:
Intrinsic semiconductor:
❖ An intrinsic semiconductor is a pure semiconductor.
❖ Insulators are those substances which do not allow the ❖ Silicon and Germanium crystals are said to be intrinsic
passage of electric current through them. semiconductors.
❖ Its valence band is full, while the conduction band is ❖ These have four valence electrons and form four covalent
empty. bonds.
❖ There is a large energy gap (more than 3eV) between ❖ Hence it is tetravalent atom.
conduction band and valence band. So in ordinary ❖ At room temperatures, it contains equal number of
conductions, no valence band electron is able to jump into electrons and holes.
conduction band. Hence due to non-availability of free ❖ At absolute zero, an intrinsic semiconductor behaves like
electrons, electrical conductivity of insulators is an insulator.
negligible. ❖ Its conductivity is low and can be varies by varying the
temperature.
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❖ At ordinary temperatures, some electrons move from ❖ It is called p-type because the conduction of
valence band to conduction band. electricity in such semiconductor is due to motion of
❖ When an electron jumps from valence band to conduction holes i.e. positive charges.
band a vacancy is created in the valence band. It is called a ❖ It is called acceptor type semiconductor because the
hole.
doped impurity atom creates a hole in semiconductor
❖ Electrons have –ve charge and holes have +ve charge.
which accepts the electron, resulting conduction in
❖ In intrinsic semiconductors, the number of free electrons ne
is equal to the number of holes nh. p-type semiconductor.
i.e. ne = nh = ni ❖ In p-type semiconductor, holes are majority carriers
❖ In intrinsic semiconductors, conductivity is due to both and electrons are minority carriers.
electrons and holes. Hence total current is the sum of the The representation of p-type semiconductor is as
electron current and hole current. i.e. I = Ie + Ih. shown in the figure.
Extrinsic semiconductor:
❖ The conductivity of a semiconductor is increased by
a process called doping.
❖ Doping is a process of adding impurity atoms to
an intrinsic semiconductor crystal to increase its Note:
electrical conductivity. ❖ When temperature of a semiconductor is increased,
❖ A doped semiconductor is called an extrinsic its conductivity also increases.
semiconductor. The impurity added is called a ❖ In intrinsic semiconductor, conductivity is only due to
dopant. breaking of covalent bonds.
❖ Due to doping there is an imbalance between the ❖ Both n-type and p-type semiconductors are
two types of charge carriers. In other words, the electrically neutral.
number of electrons and number of holes are ❖ Conductivity of Si is less than that of Ge at room
unequal in an extrinsic semiconductor temperature.
❖ A semiconductor can be doped to have an excess of ❖ The electron mobility is higher than hole mobility.
free electrons or an excess of holes. Hence there are ❖ The hole has more mass than electron.
two types of extrinsic semiconductors, namely, ❖ Though hole is +ve charge, it does not have any
n-type and p-type semiconductors. physical charge.
➢ n-type semiconductor: Differences between intrinsic and extrinsic semiconductor:
❖ When a pure semiconductor of Si or Ge (tetravalent) Intrinsic semiconductor Extrinsic semiconductor
is doped with a group V pentavalent impurities like • It is pure semiconductor. • It is impure semiconductor
arsenic (As), antimony (Sb), phosphorus (P) etc, we • Conductivity is weak. • Conductivity is made strong
obtain an n-type semiconductor. The pentavalent • There are no free charge by adding impurity atom.
impurity atoms are known as donor atoms. carriers. • There are free charge
❖ It is called n-type semiconductor because the • It behaves like an carriers.
conduction of electricity in such semiconductor is due insulator at absolute • It behaves like a conductor
zero. at absolute zero.
to motion of electrons i.e. negative charges.
• The number of holes and • The number of holes and
❖ It is called donor type semiconductor, because the
electrons are equal. electrons are unequal.
doped impurity atom donates one free electron to • There are no p-type and • There are p-type and n-type
semiconductor for conduction. n-type semiconductor semiconductors.
❖ In n-type semiconductor, electrons are majority Differences between n-type and p-type semiconductors:
carriers and holes are minority carriers. n-type semiconductor p-type semiconductor
❖ The representation of n-type semiconductor is as • Impurity is pentavalent • Impurity is trivalent
shown in the figure. atom. atom.
• The impurity atom is called • The impurity atom is
donor atom. called acceptor atom.
• Electrons are majority • Holes are majority
carriers. carriers.
• Holes are minority carriers. • Electrons are minority
➢ P-type semiconductor:
• Free electrons are formed. carriers.
❖ When a pure semiconductor of Si Ge (tetravalent) is • Holes are formed.
• Conductivity is faster.
doped with a group III trivalent impurities like • Impurity atoms are • Conductivity is slower.
aluminium (Al), boron (B), indium (In) etc, we obtain phosphorus, arsenic, • Impurity atoms are
a p-type semiconductor. The trivalent impurity atoms antimony etc. boron, indium, gallium
are known as acceptor atoms. etc.
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The p-n junction: ❖ The loss of electrons from the n-region and the gain
❖ The p-n junction is a junction between p-type of electrons by the p-region cause a difference of
semiconductor and n-type semiconductor. potential across the junction which prevents the
❖ In a pure semiconductor, one half is doped with movement of electron from n-region to p-region
n-type impurity and the other half is doped with called barrier potential.
p-type impurity. The plane separating the two regions ❖ At room temperature, the barrier potential is nearly
is known as p-n junction. 0.3V for Ge and 0.7V for Si junctions.
Formation of pn-junction: ❖ A p-n junction is a semiconductor device. Hence it is
called a semiconductor diode.
Diffusion current:
The current developed due to diffusion of
electrons and holes across the junction is called diffusion
current. The direction of diffusion current is from p-side
to n-side (p→n).
Drift current:
The motion of charge carries due to the electric
❖ Consider a p-n junction in which electrons are in
field is called drift and the corresponding current is
n-region and holes are in p-region. Due to
called drift current. The direction of drift current is from
concentration difference, electrons and holes diffuse
n-side to p-side (n→p).
across the junction and causes diffusion current
Diffusion current and drift current are opposite
from p → n.
to each other and they are not equal in magnitude.
❖ Electron leaves behind a positive ion in n-side and
Semiconductor diode or p-n junction diode or diode:
hole leaves behind a negative ion in n-side.
A pn-junction with metallic contacts is called
❖ Both positive and negative ions are immobile as they
semiconductor diode. Its circuit symbol is as shown
are bonded to the surrounding atoms.
below.
❖ As the electrons and holes continue to diffuse, a layer
of positive charges in n-side and a layer of negative
charges in p-side developed. This layer on either side
of the junction is called depletion layer or depletion Pn-junction diode under forward bias:
region.
❖ The width of the depletion region is about 10-6m and
it contains immobile +ve and –ve ions.
❖ However, the net charge in the depletion region is
zero.
❖ There is an intense electric field directed from
positive charge to negative charge will be developed
in the depletion region which prevents the further
diffusion of electrons and holes across the junction. ❖ If the positive terminal of the battery is connected to
Due to this field, an electron on p-side of the junction the p-side and the negative terminal of the battery is
moves to p-side. connected to the n-side terminal, then the pn-
❖ The motion of charge carries due to electric field is junction is said to be forward biased.
called drift and the current is called drift current from ❖ In forward biasing , the width of the depletion region
n →p. decreases and barrier height reduces.
❖ Thus, diffusion current and drift current are opposite ❖ The resistance of the p-n junction becomes low in
to each other. forward biasing.
❖ Initially, diffusion current is large and drift current is Note:
small. As the diffusion process continues, the ❖ Knee voltage (VK) or Threshold voltage or Cut=off
junction extends, thus increasing the electric field voltage:
strength and hence drift current. In forward bias, the voltage at which the current
❖ This process continues until the diffusion current starts to increases rapidly is called the knee voltage
equals the drift current. Thus a p-n junction is of the diode.
formed. ❖ Knee voltage is nearly 0.3V for Ge diodes and 0.7V
❖ In a p-n junction under equilibrium, there is no net for Si diodes.
current.
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❖ Above knee voltage, the diode conducts heavily. i.e. The battery is connected to the diode through a
for small increase in the diode voltage there will be potentiometer (or rheostat) so that the applied voltage to
large increase in diode current. the diode can be changed. For different values of
❖ Forward resistance is about 1 only. It is given by voltages, the value of the current is noted. A graph
∆𝑉𝑓 between V and I obtained as in figure.
Rf = .
∆𝐼𝑓
❖ An ideal forward biased diode has zero resistance.
Pn-junction diode under reverse bias:

❖ If the positive terminal of the battery is connected to

the n-side and the negative terminal of the battery is
connected to the p-side terminal, then the pn-junction
is said to be reverse biased.
❖ In reverse biasing, the width of the depletion region Diode as a rectifier :
increases and barried increases. ❖ The process of converting AC voltage into DC
❖ The resistance of the p-n junction becomes high in voltage is called rectification.
reverse biasing. ❖ The diode used to convert AC voltage into DC
Note: voltage is known as a rectifier.
❖ Breakdown voltage (Vbr): Types of rectifiers:
In reverse bias, the voltage at which the current 1. Half wave rectifier (HWR)
starts to increase rapidly due to breakdown of barrier 2. Full wave rectifier (FWR)
potential is called the breakdown voltage of the 1. Half wave rectifier (HWR) :
diode.
❖ Breakdown voltage is more than 25V for Ge diodes
and 35V for Si diodes.
❖ Above breakdown voltage, the diode conducts
heavily i.e. for small increase in the diode voltage
there will be large increase in diode reverse current.
❖ Reverse resistance is more than 100. It is given by
∆𝑉𝑟
Rr = .
∆𝐼𝑟
❖ An ideal reverse biased diode has infinite resistance.
❖ In general, the resistance in forward or reverse bias is
∆𝑉
called dynamic resistance (Rd). i.e. Rd = . ❖ In half wave rectifier, the AC voltage will be
∆𝐼
❖ In both the bias, if current is not limited below the converted into DC voltage during half cycle of AC
rated value, the pn-junction will get destroyed due to only. The half wave rectifier circuit is as shown in the
overheating. figure.
V-I characteristics of pn-junction: ❖ It will use a single diode and a load resister RL.
The variation of current as a function of voltage During positive half cycle of the AC, the diode is
is called V-I characteristics. The circuit arrangement is forward biased and conducts. The current flows
as shown below. through RL and a voltage is developed across RL.
❖ During negative half cycle of the AC, the diode is
reverse biased and does not conduct. Hence there is
no current through RL. As a result no voltage appears
across RL.The process repeats and output voltage is
available only during half cycle of the AC input.
❖ The graph of AC input voltage v/s DC output voltage
is as shown in the figure.

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2. Full wave rectifier (FWR): of rectified output it again gets charged to the peak
value. The rate of discharge is controlled by adjusting
the time constant (i.e. using suitable value of C and RL,
𝜏 = RLC). To make the time constant large value, C
should be large. So capacitor input filters use large
capacitors. The output voltage obtained across RL is very
close to the peak value of the rectified voltage as shown
in the figure. This type of filter is most widely used in
power supplies.
Special purpose of pn-junction diodes:
❖ In full wave rectifier, the AC voltage will be Zener diode:
converted into DC voltage during both the half cycle
of AC. The full wave rectifier circuit is as shown in
the figure.
❖ It uses two diodes (D1 and D2) and a load resistor RL.
During the positive half cycle of AC diode D1 is
forward biased and conducts. The current flows Zener diode is a specially designed heavily doped
through RL. junction diode named after its inventor Clarence Zener.
❖ During this time diode D2 is reverse biased. It does It is designed to operate under reverse bias in the
not conduct. A voltage is developed across RL due to breakdown region and used as a voltage regulator.
diode D1. Zener diode as a voltage regulator:
❖ During the negative half cycle of AC, diode D1 is We know that when the ac input voltage of a
reverse biased and do not conduct. But during this rectifier fluctuates, its rectified output also fluctuates. To
time, diode D2 is forward biased and conducts. get a constant dc voltage from the dc unregulated output
❖ The current flows through RL due to diode D2. As a of a rectifier, we use a Zener diode. The circuit diagram
result a voltage is developed across RL. of a voltage regulator using a Zener diode is shown in
❖ Thus during both the half cycles of input AC, fig.
current flows through RL in the same direction and
output voltage is developed in the same direction.
❖ The graph of AC input voltage v/s DC output
voltage is as shown in the figure.
Filters:
The output of a full wave rectifier is
unidirectional, but it is pulsating. To get steady output
from the pulsating voltage, electronic filters are used.
The unregulated dc voltage (filtered output of a rectifier)
These circuits filter are out the AC ripples and supply
is connected to the Zener diode through a series
steady voltage. Hence they called filters. The filter
resistance Rs such that the Zener diode is reverse biased.
circuits consist of capacitor or inductor or their
If the input voltage increases, the current through Rs and
combinations.
Zener diode also increases. This increases the voltage
Capacitor as filter:
drop across Rs without any change in the voltage across
the Zener diode. This is because in the breakdown
region. Zener voltage remains constant even though the
current through the Zener diode changes. Similarly, if
the input voltage decreases, the current through Rs and
Zener diode also decreases. The voltage drop across Rs
The output of full wave rectifier is applied as decreases without any change in the voltage across the
input to a capacitor of large capacitance as shown in the Zener diode. Thus any increase decrease in the input
figure. voltage results in, increase decrease of the voltage drop
When the voltage across the capacitor is rising, across Rs without any change in voltage across the Zener
it gets charged. If there is no external load, it remains diode. Thus the Zener diode acts as a voltage regulator.
charged to the peak voltage of the rectifier output. When We have to select the Zener diode according to the
there is a load, it gets discharged through the load and required output voltage and accordingly the series
the voltage across it begins to fall. In the next half-cycle resistance Rs.
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Optoelectronic junction devices: 3. Used in optical communication.
The semiconductor devices in which carriers are 4. Used for numerical displays.
generated by photons are called optoelectronic devices. 5. Used in remote controls.
They are Advantages of LED over lamps:
Light emitting diode (LED): 1. Low operational voltage and less power.
❖ It is the diode which converts electrical energy into 2. LEDs are nearly monochromatic.
light energy in the forward bias is called LED. 3. They won’t get heated.
❖ The symbol of a LED is shown in figure below. 4. They have long life and ruggedness.
5. They can be operated very fast (ON-OFF).
Photodiode:
❖ It is diode which converts light energy into electrical
❖ A light emitting diode (LED) is a heavily doped energy in the reverse bias.
diode which emits spontaneous radiation under ❖ Photodiode is a light sensing device. It works in
forward bias. reverse bias. A photo diode circuit is as shown in the
❖ The diode is encapsulated with a transparent cover so figure.
that emitted light can come out.
❖ When the diode is forward biased, electrons are sent
from n→p and holes are sent from p→n. At the
junction boundary the concentration of minority
carriers increases. Thus at the junction boundary on
either side of the junction, excess minority carriers ❖ The symbol of a photodiode is shown in figure below.
are there which recombine with majority carriers near
the junction. On recombination, the energy is released
in the form of photons. Photons with energy equal to
or slightly less than the energy gap are emitted. When ❖ When the photodiode is illuminated with light of
the forward current of the diode is small, the intensity energy greater than the energy gap of the
of light emitted is small. As the forward current semiconductor, the electron-hole pairs are generated
increases, intensity of light increases and reaches a due to the absorption of photons.
maximum. Further, increase in the forward current ❖ The diode is fabricated such that the generation of
results in decrease of light intensity. LEDs are biased electron-hole pairs takes place near the depletion
such that the light emitting efficiency is maximum. region of the diode.
❖ The V-I characteristics of a LED is similar to that of a ❖ Due to electric field of the junction, electrons and
Si junction diode. But the threshold voltages are holes are separated before they recombine.
much higher and slightly different for each colour. ❖ The direction of the electric field is such that
The reverse breakdown voltages of LEDs are very electrons reach n-side and holes reach p-side.
low, typically around 5V. So care should be taken ❖ Electrons are collected on n-side and holes are
that high reverse voltages do not appear across them. collected on p-side giving rise to an emf.
❖ The colour of the emitted light will depend upon the ❖ When an external load is connected, current flows
type of the material used. By using gallium arsenide through it. The strength of the photocurrent increases
phosphide (GaAsP) and gallium phosphide (GaP), with the increase in the intensity of incident light. The
one can product LEDs that radiate red, green, yellow V-I characteristics of the device is as shown in the
and orange. If Eg is energy gap, λ is wavelength of the figure.
ℎ𝑐
emitted light, then λ = 𝐸
𝑔

For GaAs, Eg = 1.4eV,

λ = 9000A. This wavelength is in the IR-region.
For GaP, Eg = 2.25eV.
λ = 5600A. This wavelength is for green colour.
For GaAsP, Eg = 1.9eV Uses of photodiode:
λ = 6600Å 1. Used to photo-detector to detect optical signals.
This wavelength is for red colour. 2. Used to measure illumination levels.
Uses of LED: 3. Used in optical communications.
1. Uses in burglar alarms. 4. Used in burglar alarms.
2. Used as indicator lamps. 5. Used in currency counting machine.
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Solar cell or Photovoltaic cell: Note:
❖ It is a diode which converts solar energy into Sunlight is not always required for a solar cell.
electrical energy. It is also called a photovoltaic cell. Any light with photon energies greater than the band gap
❖ It works on the same principle as that of photodiode, is enough to produce photo-voltage.
expect that no external bias is applied and the Uses of solar cells:
junction area is kept much larger for solar radiation to 1. Uses to charge strong batteries.
be incident so that more power is generated. 2. Used in wrist watches, calculators and light meters.
❖ It consist of a p-type semiconductor wafer over which 3. Used in space vehicles and satellites to give power to
a very thin layer of n-type semiconductor is grown by them.
diffusion process. A thick metallic back contact is Digital electronics and logic gates:
provided to the other side of p-type as shown in the In electronics circuits, the signal (current or voltage)
figure. The metallic fingers that act as front contact has been in the form of continuous, time-varying voltage
are prepared on the top surface of n-type for good or current. Such signals are called continuous or
electrical contact. analogue signals.
❖ The generation of emf by a solar cell is due to the Digital electronics is an electronic circuit which uses
following three basic processes generation, separation digital signals. In this system, binary numbers are used
and collection. they are 0 and 1. Some terms represented by 0 and 1 are
❖ When light is incident on the solar cell, electron-hole High voltage level = 1(ON)
pairs are generated in the junction. Due to electric Low voltage level = 0 (OFF)
field they get separated before they recombine. Now True = 1
the electrons are flowing in n-type and holes flowing False = 0
in p-type. Logic gates:
❖ Electrons are collected by front contact and holes are ❖ A logic gate is an electronic circuit in which there is
collected by back contact. Thus p-side become a logical relation between input and output voltage.
positive and n-side becomes negative giving rise to Theses logic gates can be realized using
photo voltage. semiconductor devices.
❖ When an external load is connected, a photocurrent ❖ There are three basic logic gates namely. NOT, OR
flows through the load. and AND gates.
❖ A logic gate has one or more inputs and only one
output. But NOT gate has only one output and one
input.
❖ All input and output are represented in a table
known as truth table.
❖ The cell does not require any external battery. It ❖ Basic logic gates can also be represented by Boolean
generates its own voltage for operation. expressions.
❖ The V-I characteristics od solar cell is drawn as NOT gate:
shown in the graph. Solar cell does not draw any ❖ The NOT gate performs inversion or
current but it supplies current to the load. complementation.
❖ Logic symbol

❖ The Boolean expression is Y = 𝑨 ̅.

❖ So whenever input is low, output is high and vice-
❖ Semiconductors with band gap close to 1.5eV are
versa. It is also called inverter.
ideal materials for solar cell fabrication.
❖ Truth table:
e.g.: Si, GaAs, CdTe etc.
The important criteria for selection of a material for solar
cell fabrication are.
❖ Band gap (~1.0 to 1.8eV)
❖ High optical absorption (~104cm-1)
❖ Electrical conductivity
OR gate:
❖ Availability of the raw material and
❖ The OR gate performs logical addition.
❖ Cost of the material.
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❖ Logic symbol ❖ Logic symbol

❖ The Boolean expression is Y = A + B.

̅̅̅̅̅
❖ The Boolean expression is Y = 𝑨. 𝑩
❖ Truth table:
❖ Truth table:

AND gate:
❖ The AND gate performs logical multiplication.
********************END*********************
❖ Logic symbol
Previous Years Question bank
One mark questions
1. Write the truth table of logic OR gate. (M–2014)
❖ The Boolean expression is Y = A.B. 2. Mention any one application of Light Emitting Diode
❖ Truth table: (LED). (J – 2014)
3. Write a circuit symbol of AND gate.
(J 2014,J – 2017)
4. Inputs of a NAND gate are A = 1, B = 0. What is the
output? (J – 2015)
5. Draw the circuit symbol of pnp transistor.
(M – 2016)
6. Define current amplification factor in a common
Universal gates:
emitter mode of a transistor.
NOR gate and NAND gate are called universal (J – 2016)
gates. Because all other gates including the basic can be
7. Write the truth table of NAND gate. (J – 2016)
obtained using these two gates.
8. Write any one advantage of Light emitting diode.
NOR gate
(J – 2017)
❖ It is a logic circuit of OR gate followed by a NOT
9. What is depletion region in a semiconductor diode?
gate.
(M – 2018)
❖ Logic symbol
10. What is the output of this combination?
(M – 2018)

̅̅̅̅̅̅̅̅
❖ The Boolean expression is Y = 𝑨 +𝑩
❖ Truth table: Two mark questions
1. What is a photo diode? Mention its one use.
(M – 2015)
2. What is intrinsic semiconductor? Name the element
used as a dopant to obtain p type semiconductor.
(J – 2015)
3. Write the logic symbol and truth table of a NAND
gate. (M – 2016)

NAND gate: 4. What is a NAND gate? Give its logic symbol.

(M – 2017)
❖ It is a logic circuit of AND gate followed by a NOT
gate.

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5. Write any two advantage of light emitting diode
(LED) over conventional incandescent low power
lamps. (J – 2018)
6. Distinguish between n-type and p-type
semiconductors. (M – 2019)
7. Give the two differences between collector region
and emitter region of the transistor. (J-2019)
Three mark questions
1. How is Zener diode used as voltage regulator?
(M- 2014,J – 2017,J – 2018)
2. Give any three differences between n-type and p-
type semiconductors.
(J – 2014;J – 2016,M – 2017,M- -2018)
3. Distinguish between a conductor and a
semiconductor on the basis of band theory of solids.
(M – 2015)
4. Define input resistance, output resistance and
current amplification factor of a transistor.
(J – 2015)
5. What is an amplifier? Draw the simple circuit of
transistor amplifier in CE mode. (M – 2016)
6. Explain ‘Conduction band’, ‘Valance band’ and
‘Energy gap’ in semi conductors. (M – 2019)
7. What is NAND gate? Write its logic symbol and
truth table. (J – 2019)
Five mark questions
1. What is rectification? With relevant circuit diagram
and waveforms, explain the working of a p-n
junction diode as a full wave rectifier by drawing
input and output waveforms.
(M – 2016,J – 2014,J – 2015,M – 2017,M – 2018)
2. Explain the formation of energy bands in solids. On
the basis of energy bands distinguish between a
conductor, semiconductor and an insulator.
(M - 2014)
3. What is amplification? With a neat circuit diagram,
explain the working of npn transistor in CE mode as
a voltage amplifier with input and output
waveforms.
(M – 2015,J – 2016,J – 2017,M – 2019)
4. Describe with suitable block diagram action of p-n
junction diode under forward and reverse bias
conditions. Also draw I-V characteristics. (J – 2018)
5. What is rectification? Describe with a circuit
diagram the working of p-n junction diode as a half
wave rectifier with input and output wave forms.
(J – 2019)
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