Chapter 6 Solutions (Global Edition)

Prob. 6.1
Find V O , V P , and V T . Find V D,sat for V G =-3V.

kT Na ⋅ Nd 1018 cm1 3 ⋅1016 cm1 3

VO = ⋅ ln = 0.0259eV ⋅ ln = 0.814V
( )
2
q n i2 1.5 ⋅1010 1 3 cm

q ⋅ a 2 ⋅ Nd 1.6 ⋅10-19 C ⋅ (10-4 cm) 2 ⋅1016 1

cm3
VP = = = 7.66V
2⋅∈ 2 ⋅11.8 ⋅ 8.85 ⋅1016 cmF

VT = VP - VO = 6.85V
VD,sat = VT + VG = 6.85V - 3.00V = 3.85V

Prob. 6.2
Find I D,sat for V G =0V, -2V, -4V, and -6V and plot I D,sat versus V D,sat for JFET in 6.1.
Z
GO = 2 ⋅ a ⋅ q ⋅ μn ⋅ n ⋅ = 2 ⋅10-4 cm ⋅1.6 ⋅10-19 V ⋅103 cm
V⋅s ⋅10 cm3 ⋅10 = 3.2 ⋅10 S
-3
2 16 1

L
 3

 V -V 2  V -V  2
1
I D,sat = G O ⋅ VP ⋅ G O
+ ⋅ G O
 +
 VP 3  VP  3 
 
 3

V - 0.814V 2  V - 0.814V  1
I D,sat = 3.2 ⋅10-3S ⋅ 7.66V ⋅  G
2
+ ⋅ G +
 7.66V 3  7.66V  3 
 
Prob. 6.3
Graph I D versus V D for V G =0V, -2V, -4V, and -6V for JFET in 6.1.
 3 3

 V 2  V -V  2
2  V +V -V  2

I D = G O ⋅ VP ⋅ + ⋅ - ⋅
 VP 3  VP  3   
D O G O D G
VP  
 
 3 3

V 2  0.814V-V  2  0.814V+V -V 
I D = 3.2 ⋅10 S ⋅ 7.66V ⋅  
2 2
-3 D
+ ⋅ G
- ⋅ D G
 7.66V 3  7.66V  3  7.66V  

 

Prob. 6.4
Graph the I D – V D curve.
Prob. 6.5
Graph the I D – V D curve.
Prob. 6.6
Consider an n-channel JFET. Draw the transfer characteristics curve. Show that the drain
current is independent of drain voltage after pinch off. If the donor concentration increases
in the substrate, then how will it affect the drain current?

Transfer characteristics is the variation of drain current (I D ) with gate-to-source voltage

(V GS ) for a set of drain-to-source voltage (V DS ) as a parameter.

2
 V 
For n-channel JFET, I D = I DSS 1 − GS  .(1 + λ .VDS )
 VP 
For pinch off to occur with pinch off voltage V P , VGS = VDS , sat − V p

2
VDs, sat 
Thus, I D = I Dss .  .[1 + λ.(VGS − VP )]
 VP 

qa 2 .N d
We know pinch off voltage can be estimated as, VP = . This drain current will
2ε
be,

2
 VDs, sat    qa 2 .N d 
I D = I Dss . .2ε  
.1 + λ. VGS − 
2   2ε 
 q.N d a   
So with the increase in donor concentration, V P increases and I D decreases.

Prob. 6.7
Show that the width of the depletion region in Figure 6-15 is given by Equation 6-30.
Use the mathematics leading to Equation 5-23b with Φ s for the potential difference across
the depletion region contained in x po =W.
Prob. 6.8
Sketch the low and high frequency behavior (and explain the difference) of an MOS
capacitor with a high-k gate dielectric (ε r =25) on an n-type semiconductor (ε r =10, n i =1013
cm-3). Mark off the accumulation, depletion, inversion regions, and the approximate
location of the flatband and threshold voltages. If the high frequency capacitance is 250
nF/cm2 in accumulation and 50 nf/cm2 in inversion, calculate the dielectric thickness and
the depletion width in inversion.

In a high frequency measurement, the charge in the inversion layer cannot follow rapid
voltage variations and thus does not contribute to the small signal AC capacitance. Hence,
the semiconductor capacitance is at a minimum, corresponding to maximum depletion
width.

In a low frequency measurement, there is enough time for carriers to be generated/drift to

the inversion layer/go back to the substrate. So the depletion capacitance is very large and
the total capacitance at inversion would be only the dielectric capacitance.

εi ε 25 × 8.85 ×10−14 F/cm

Ci = 250 nF/cm 2 = ⇒ d= i = = 88.5 nm
d Ci 250 ×10−9 F/cm 2
ε
Cd =
Wd
C d Ci Cd × 250 nF/cm 2
Cmin = ⇒ 50 nF/cm 2 = 2
⇒ Cd = 62.5 nF/cm 2
C d + Ci Cd + 250 nF/cm
ε 10 × 8.85 ×10−14 F/cm
Wd = = = 0.1416 μm
Cd 62.5 ×10−9 F/cm 2
Prob. 6.9
Sketch the low and high frequency CV behavior (and explain any difference)of a MOS
capacitor with high-k gate dielectric (ε r =25) on a p-type Si substratedoped at 1017 cm-3.
Label the accumulation, depletion, inversion regions. If the high frequency capacitance is
2 μF/cm2 in accumulation, calculate the dielectric thickness and the minimum high
frequency capacitance.

εi 25 × 8.85 ×10-14 F/cm

Caccumulation ; Ci = = = 2 ×10-14 F/cm 2
ti ti
⇒ t i = 1.1×10-6 cm = 110 Å
N a = 1017 cm -3
kT  N a   1017 cm -3 
Bulk Fermi potential, ϕF = ln   = ( 0.026 V ) ln  -3 
= 0.417 V
 1.1×10 cm 
10
q  ni 
ε sϕF
Maximum depletion width, Wm = 2
qN a

=2
(11.8 × 8.85 ×10 F/cm ) × ( 0.417 V ) = 1.04 ×10
-14
-5
cm
(1.6 ×10 C ) × (10 cm )
-19 17 -3

εs
⇒ Cd = = 10-7 F/cm 2
Wm
Ci C d
Cmin = = 9.5 × 10-8 F/cm 2
Ci +Cd

The difference in C HF and C LF in the accumulation and depletion regions is due to interface
states that respond to LF, but cannot respond to the HF AC. Also, carrier recombination-
generation is too slow to respond to HF. Hence we see no inversion there.
Prob. 6.10
Find (a) oxide capacitance, (b) maximum depletion width, and (c) modified work function.

ε ox ε r .ε 0 3.9 x8.854 x10 −14

(a) Oxide capacitance, Cox = = = = 3.45 x10 − 9 F/cm2.
d ox d ox 100 x10 − 7
1/ 2
 2ε .φ 
(b) Maximum depletion width, Wm =  s s 
 q.N a 

 E − EF 
We know, N a = ni exp  i 
 KT 

 Na   1.5 x1016 
Ei − E F = qφ F = KT ln  = 0.0259 ln  = 0.36eV
 Ni   10 
 1.5 x10 
At strong inversion, φ S = 2φ F
Thus, maximum depletion width,
1/ 2
 2ε .φ 
1/ 2  2 x3.9 x8.854 x10 −14 x 2 x0.36 
Wm =  s s  =  = 2.5 x10 − 5 cm.
 q.N a   1.6 x10 −19 x1.5 x1016 

(c) Modified work function, φms = φm − φ s .

Since, here gate is highly doped i.e. E F of metal touches almost E C , so we can assume,
qφm ≅ qχ m . Moreover for gate and substrate the basic material is same (Si) thus we
also can assume, χ metal = χ sem .

 E g , sem 
Thus, qφms = qχ m − qχ m − + qφ F  = −0.92eV . So,
 2 
ϕ ms = −0.92V .
Prob. 6.11
Find Wm , V FB , and V T . Sketch the C-V curve.

Nd 5 ⋅1017 cm1 3
Φ F = -kT ⋅ ln = -0.0259V ⋅ ln = -0.449V
ni 1.5 ⋅1010 cm1 3
1 1
∈s ⋅ ( -Φ F )  2 11.8 ⋅ 8.85 ⋅10-14 cm
F
⋅ ( 0.449V )  2
Wm = 2 ⋅   = 2⋅  = 0.049μm
 q ⋅ Nd   1.6 ⋅10-19 C ⋅ 5 ⋅1017 cm1 3 
Qd = q ⋅ N d ⋅ Wm = 1.6 ⋅10-19 C ⋅ 5 ⋅1017 1
cm3
⋅ 0.049 ⋅10-4 cm = 3.92 ⋅10-7 C
cm 2

∈i 3.9 ⋅ 8.85 ⋅10-14 cm

F
Ci = = = 3.45 ⋅10-7 cmF 2
d 10-6 cm
Qi 1.6 ⋅10-19 C ⋅ 5 ⋅1010 cm1 3
VFB = Φ ms - = -0.15V- = -0.173V
Ci 3.45 ⋅10-7 cmF 2
Qd
VT = 2 ⋅ Φ F - + VFB = -0.898V-1.136V-0.173V = -2.2V
Ci
∈s 11.8 ⋅ 8.85 ⋅10-14 cm
F
Cd = = = 2.13 ⋅10-7 F
Wm 0.049 ⋅10 cm-4 cm 2

Ci ⋅ C d 3.45 ⋅10-7 cmF 2 ⋅ 2.13 ⋅10-7 cmF 2

Cmin = = = 1.32 ⋅10-7 F
Ci + C d 3.45 ⋅10-7 cmF 2 + 2.13 ⋅10-7 cmF 2 cm 2
Prob. 6.12
Plot the I d -V d curve.

Prob. 6.13
In Problem 6.2, find the threshold voltage V T for the MOS structure. How much AL has to
be doped in the substrate in order to achieve 20% reduction in the present threshold
voltage of the structure?

Qox QD
Threshold voltage, VT = φms − − + 2φ F
Cox Cox

8 x10 −8 − 6 x10 −8
VT = −0.92 − − + 2 x0.36 = −0.78 V
−9 −9
3.45 x10 3.45 x10
To get 20% reduction in the present threshold voltage, the change in threshold will be,
∆VT = −0.156V .

So the doping will be,

∆VT .Cox − 0.156 x3.45 x10 − 9
Q Al = = = 0.336 x1010 C/cm2.
q 1.6 x10 −19
Prob. 6.14
Find the flat band voltage (V FB ) of the structure, where the oxide charge density is 2 x 109
C/cm2 and φ ms = –0.90 V.

 2 x1016 
Fermi potential, φ F = 0.0259 ln  = 0.365V
 10 
 1.5 x10 
Maximum depletion width,
1/ 2
 ε .φ 
1/ 2  2 x11.8 x8.854 x10 −14 x0.365 
Wm = 2  s F  =  = 0.69 x10 − 3 cm.
 q.N a   1.6 x10 −19 x 2 x1016 

3.9 x8.854 x10 −14

Oxide capacitance, Cox = = 0.431x10 − 7 F/cm2.
−7
80 x10

Qox 2 x109 x1.6 x10 −19

Flat band voltage, VFB = φms − = −0.90 − = −0.907 V.
Cox −7
0.431x10
Prob. 6.15
Draw figures for an n-type substrate.
Prob. 6.16
Sketch the band diagram and CV characteristics and calculate the appropriate values.
Evac
qΦF=5eV

4ev
4eV

EC

EFM 1.5eV
HfO2 Ei
qVT qΦS qΦF
EF
EV

 1.5eV  1018 1 
F ms = F m - F s = 5eV -  4eV+ +0.026eV ⋅ ln  12 cm3
  = -0.11eV
 2  10 1 
  cm3 
∈ 25 ⋅ 8.85 ⋅10 cm
-14 F
Ci = i = = 2.21 ⋅10-6 cmF 2
d 100 ⋅10 cm
-8

1 1

 2 ⋅ 2Φ F ⋅∈s  2  2 ⋅ 2 ⋅ 0.36eV ⋅10 ⋅ 8.85 ⋅10-14 F 2

 = 2.8 ⋅10 cm
-6
Wm =   =  cm

 q ⋅ Na   1.6 ⋅10-19 C ⋅1018 cm1 3 

 
Q Q
VT = F ms - ox - d +2 ⋅ F F = 0.81V
Ci Ci

At V T , at interface, n=1018cm-3 and p=n i 2/n=106cm-3

Deep in substrate, n=106cm-3 and p=1018cm-3

At high frequency, inversion electrons do not respond while at low frequency, they do

At large negative bias, doubling the oxide thickness reduces C i by ½

At large negative bias, doubling the substrate doping does not change C i but would affect
the depletion capacitances

C
Coxi C
Low Frequency

High Frequency

V
Prob. 6.17
Find the oxide thickness and substrate doping.

C i = measured capacitance / area in strong accumulation

37.85 ⋅10-12 F
Ci = 2
= 37.85 ⋅10-9 F
cm 2
.001cm
∈i 3.85 ⋅ 8.85 ⋅10-14 cm
F
d= = = 9.0 ⋅10-6 cm = 900Å
Ci 37.85 ⋅10 cm2
-9 F

Use the normalized minimum capacitance corresponding to quasi-equilibrium

Cmin
C′min = = 0.2
Ci
Ci Cdmin
Cmin = where Cmin is the total series capacitance
Ci +Cdmin
 Cmin   C′min  37.85 ⋅10-12 F  0.2  F
Cdmin =Ci ⋅   =Ci   = ⋅  = 9.46 ⋅10-9
1 - C′min  1 - 0.2 
2
 Ci - Cmin  .001cm cm 2

( ) ( ( ))
2
30.388 + 1.683⋅log Cd min - 0.03177⋅ log Cd min 
 
N d = 10
30.388 + 1.683⋅( -8.02 ) - 0.03177⋅( 64.39 ) 
N d = 10  = 1014.83 = 6.88 ⋅1014 1
cm3
Prob. 6.18
Determine the initial flatband voltage.
To determine the initial (pre-stressed) flatband voltage VFB 0
First calculate C FB from the previously determined doping density
Ci ⋅ Cdebye
CFB =
Ci +Cdebye
CFB Cdebye
= = C′FB (normalized flatband capacitance)
Ci Ci +Cdebye
∈s ∈s q2
Cdebye = = = ⋅∈S ⋅N A
LD kT ∈s kT
⋅
q qN A
1.6 ⋅10-19 C
Cdebye =
0.0259V
( )
⋅ 11.8 ⋅ 8.85 ⋅10-14 F 6.9 ⋅10-14 cm1 3 = 6.7 ⋅10-8 F
cm 2

Cdebye 6.7 ⋅10-8 cmF 2

C′FB = = = 0.78
Ci + Cdebye 3.785 ⋅10-8 cmF 2 + 4.71⋅10-8 cmF 2
VFB = -1.0V from plot in Figure 6-15

Prob. 6.19
Determine the field oxide charge and the mobile ion content.
Qi
VFB = F ms - q = -1.0V (from 6.16) where F ms = -0.35V
Ci
3.785 ⋅10 cmF 2
-8
Qi = ( F ms -VFB ) ⋅ i = ( -0.35V- ( -1.0V ) ) ⋅
C
= 1.53 ⋅1011 cm1 2
q 1.6 ⋅10-19 C
To determine mobile ion concentration, compare the positive and negative bias temperature
flatband voltages.
Ci 3.785 ⋅10-8 cmF 2
Qion = ( VFB- -VFB+ ) = -1.0V - ( -1.5V )  ⋅ = 1.2 ⋅1011 cm
ions
1.6 ⋅10-19 C
2
q
Prob. 6.20
Sketch the cross-section of a n-channel enhancement mode Si MOSFET. It has a channel
length of 2 μm, width of 5 μm, high-k gate dielectric of thickness 10 nm, with a relative
dielectric constant of 25, and substrate doping of 1018 cm-3. If the threshold voltage is 0.5
V, calculate the flatband voltage. For a gate bias of 3V, what is the total approximate
inversion charge under the channel? Sketch the band diagram as a function of depth in the
middle of the channel under this condition, specifying the value of the band edges to the
Fermi level deep in the bulk and at the interface with the gate dielectric.
For a drain bias of 0.1V, calculate the drain current. The mobility of electrons is 1000
cm2/V-s and the effective mobility of holes is 200 cm2/V-s. Repeat the calculation of drain
current using a “charge control” approach by dividing the inversion charge by the transit
time for carriers to go from source to drain.

εi 25 × 8.85 ×10-14 F/cm

Ci = = = 2.21×10-6 F/cm 2
d 10-6 cm
kT  N A  ( 4qε s N A φ F )
12

VT = VFB + 2 ln  +
q  ni  Ci
) ))) (
2φ F

⇒ VFB = 0.5 V - 2 × ( 0.47 V ) - 0.25 V = -0.69 V

( ) ( )
Qinv ; ( LW ) Ci ( VG - VT ) = 2 × 5 ×10-8 cm 2 × 2.21×10-6 F/cm 2 × ( 3V - 0.5V )
= 5.53 ×10-13 C = 0.55 pC
W  1 
ID = μ n Ci ( VG - VT ) VD - VD 2 
L  2 
5 μm  1 2
=
2 μm
( )( 
)
1000 cm 2 /V ⋅ s 2.21×10-6 F/cm 2 ( 3V -0.5V )( 0.1V ) - ( 0.1V ) 
2 
-3
= 1.38 ×10 A
L L 2 ×10-4 cm
τt = = = 4 ×10-10 s
( )
=
vd με ( )
1000 cm 2 /V ⋅ s × 0.1 V
2 ×10-4 cm
Qinv 5.53 ×10-13 C
ID = = -10
= 1.38 ×10-3 A
τt 4 ×10 s
Prob. 6.21
Calculate V T of a Si n-channel MOSFET with φ ms = –0.25 V, 100 nm gate oxide thickness,
N A = 1017 /cm3, and oxide charge density 5 x 1018 C/cm2 for a substrate bias of –2 V. (QD
= 6x10-8 C/cm2) If the channel mobility is µ n = 250 cm2/V-sec, then what will be the drive
current for a 50-nm channel MOSFET with gate bias at 2 V working at saturation region?
The length of the MOSFET is 2 µm.

3.9 x8.854 x10 −14

Oxide capacitance, Cox = = 0.431x10 − 7 F/cm2
80 x10 − 7

Qox 5 x108 x1.6 x10 −19

Flat band voltage, VFB = φms − = −0.25 − = −0.2732V V.
Cox −9
3.45 x10
 1017 
Fermi potential, φ F = 0.0259 ln  = 0.4069V
 10 
 1.5 x10 

Maximum depletion width,

1/ 2
 2.ε .(2.φ F + Vr )  2 x3.9 x8.854 x10 −14 x(2 x0.4069 + 2) 
1/ 2
Wm =  s  =  = 0.35 x10 − 3
−19 17
 q.N A   1. 6 x10 x10 
cm.
Qox QD
Threshold voltage, VT = φms − − + 2φ F
Cox Cox

5 x10 −8 x1.6 x10 −19 − 6 x10 −8

VT = −0.2732 − − + 2 x0.48 x10 − 3 = −0.267 V.
−9 −9
3.45 x10 3.45 x10
Saturation drive current,
1 W 
I D, sat =  .m n .Cox .(VG − VT )2
2 L 
1  50 x10 − 9 
= x 250 x.3.45 x10 − 9 x(2 + 0.067 )2 = 0.0554 mAmp
2  2 x10 − 6 
Prob. 6.22
A M-SiO 2 -SI MOSFET turns on with 0.7 V gate voltage, and the capacitance generates 1
µF/ cm2. Calculate the overdrive voltage for V G = V D = 3 V when the channel length is 70
nm. Suppose in this structure the Fermi level is 0.365 eV below the intrinsic level in the
substrate, and the substrate is doped with 2 x 1016/cm3 acceptor doping. Now, calculate the
drain saturation current if the effective channel mobility is 550 cm2/V-sec and carrier
saturation velocity is 0.5 x 107 cm/sec.

Overdrive voltage, VDs, sat = (VGS − VT ) = 3 − 0.7 = 2.3V .

16
Here, φ F = 0.365V and N a = 2x10 /cm3.

Maximum depletion width,

1/ 2
 ε .φ 
1/ 2  2 x11.8 x8.854 x10 −14 x0.365 
Wm = 2  s F  =  = 0.69 x10 − 3 cm.
 q.N a   1.6 x10 −19 x 2 x1016 

We know drive voltage/ depletion width is, Maximum depletion width,

I D, sat m n .Cox 550 x1x10 − 6

= (VGS − VT ) =
2
−7
(3 − 0.7 )2 = 207.8 Amp/cm.
Wm 2L 2 x70 x10

Thus total drain saturation current, Maximum depletion width,

I D, sat = 207.8 x0.69 x10 − 3 = 0.143 Amp.
Prob. 6.23
A p-channel enhancement-mode MOSFET with 50 nm thick HfO 2 high-k gate dielectric
(ε r =25) has a threshold voltage of -0.6V. The effective hole channel mobility is 150 cm2/V-
s. What is the drive current for a 50 μm wide and 2 μm long device at V G = -3V and V D = -
0.05V? What is the saturation current at this gate bias? Sketch a cross-section of the device
schematically showing the inversion layer if gate and drain are both at -3V. Below that
sketch qualitatively the variation of channel potential with position.

ε ox 25 × 8.85 ×10-14 F/cm

Cox = = -7
= 4.427 ×10-7 F/cm 2
t ox 50 ×10 cm

VT = -0.6 V
W  1 
I D,lin = μ p Cox ( VGS - VT ) VDS - VDS2 
L  2 
50 μm  1 2
=
2 μm
( )( 
)
150 cm 2 /V ⋅ s 4.427 ×10-7 F/cm 2 ( -3 V + 0.6 V )( -0.05 V ) - ( -0.05 V ) 
2 
-4
⇒ I D,lin = 1.97 ×10 A = 197 μA
W
μ p Cox ( VGS - VT )
2
I D,sat =
2L
50 μm
=
2 μm
( )( )
150 cm 2 /V ⋅ s 4.427 ×10-7 F/cm 2 ( -3 V + 0.6 V )
2

= 4.78 ×10-3 A = 4780 μA

Prob. 6.24
Calculate V G , output conductance, transconductance, and the new I D .
6V 6V 6V
+++++++++++ +++++++++++ +++++++++++

source drain source drain source drain

n+ n+ n+ n+ n+ n+
p p p
= negative inversion region = negative inversion region = negative inversion region
VD = 1V VD = 5V VD = 10V
pinch off pinch off
VD,sat = VG -VT → VG = VD,sat +VT = 5V+1V = 6V

∂I D
g= = 0 since device is in saturation
∂VD

μ Ci Z
I D,sat = ⋅ (VG -VT ) 2 = k ⋅ (VG -VT ) 2
2L
10-4 A
I D,sat = k ⋅ (VG -VT ) 2 → 10-4 A = k ⋅ (6V-1V) 2 → k = 2
= 4 ⋅10-6 A
V2
25V
∂I D
gm = = 2 ⋅ k ⋅ (VG -VT ) = 2 ⋅ 4 ⋅10-6 A
⋅ 5V = 4 ⋅10-5 A
∂VG V2 V

For VG -VT = 3V and VD = 4V device is in saturation

I D,sat = k ⋅ (VG -VT ) 2 = 4 ⋅10-5 A
V2
⋅ (3V) 2 = 3.6 ⋅10-4 A
Prob. 6.25
Determine the initial flatband voltage.
QD
VT =VFB +2F F -
Ci
Qi
VFB =F ms -
Ci
∈i 8.854 ⋅10-14 cm
F
⋅ 3.9
Ci = = =3.45 ⋅10-7 F
d 100 ⋅10 cm
-8 cm 2

Note: here use dielectric constant of oxide

Qox 5 ⋅1010 ⋅1.6 ⋅10-19C
VFB = F ms - = -1.5 - = -1.523V
Ci 3.45 ⋅10-7 F
kT NA  1018 cm1 3 
FF = ⋅ ln = 0.026V ⋅ ln   = 0.467V
q ni  1.5 ⋅1010 1 3 
 cm 
2 ∈s ( 2F F + VB )
Wm = = 6.695 ⋅10-6 cm
qN a

Note: here use dielectric constant of silicon

V T = -0.223V + 0.698V + 0.140V = 0.615V
With V SUB = -2.5V, depletion charge increases. Instead of bandbending of 2φ F , now have
bandbending of (2φ F +V B ).
QD 1.071 ⋅10-6 C
= = 3.103V
Ci 3.45 ⋅10-7 F
VT = -1.533V+0.934V+3.103V = 2.514V

n i2
At VT near the interface, n = N a = 1018 1
cm3
and p = = 2.25 ⋅102 1
cm3
Na
n i2
In bulk, p = 1018 1
cm3
and n = = 2.25 ⋅102 1
cm3
p
SiO2

EC

ФF Ei
EFp
EV
EFn
ФF
2ФF-1.5eV
 Prob. 6.26 Calculate threshold voltage
Qd
VT = VFB + 2φF -
Ci
Qi
VFB = 2φF -
Ci
εi 8.85 × 10-14 × 3.9
Ci = = = 3.452 × 10- 7 F/cm 2
d 100 × 10-8
Note : Here we use dielectric constant of oxide.

According to Fig. (6-17) in the textbook, for N a = 1018 cm -3

⇒ F ms =-1.1V
Qi 5 ×1010 ×1.6 ×10-19
VFB =F ms - =-1.1 - =-1.12V
Ci 3.452 ×10-7
kT Na  1018 
φF =ln =
0.0259 ⋅ ln  10 
=
0.467V
q ni  1.5 ×10 
2ε s (2φF ) 2(11.8)(8.85 ×10-14 )(2 × 0.347)
=W = -19
= 3.49 ×10-6 cm
qN a 1.6 ×10 ×10 18

Note: Here we used dielectric constant of Si.

Qd = -qN aWm
Qd 1.6 ×10-19 ×1018 × 3.49 ×10-6
VFB + 2φF -
VT = =
-1.12 + 2(0.467) + =
1.43V
Ci 3.452 ×10-7
Prob. 6.27

For an n-channel MOSFET with gate oxide thickness of 30 nm, threshold voltage of 0.7 V,
Z = 30 µm, and length of the device is 0.9 µm, calculate the drain current for V G = 3 V and
V D = 0.2 V. Assume that the electron channel mobility is 200 cm2/V-sec. What will be the
required drain current to drive the MOS in saturation region?

3.9 x8.854 x10 −14

Oxide capacitance, Cox = = 1.15 x10 − 7 F/cm2
30 x10 − 7

(VG − VT ) = 3 − 0.7 = 2.3V and VD = 0.2V . Since, VD < (VG − VT ) , so the MOS is
operating in the linear region.

Thus drain current,

Z .m n .Cox  1 2
ID =
L (VG − VT ).VD − 2 .VD 

30 x10 − 6 x10 2.200 x1.51x10 − 7  1 

=  2.3 x0.2 − (0.2 )2  = 442.89 mAmp
0.9 x10 − 6 x10 2  2 

For saturation region of operation, VD ≥ (VG − VT ) . So the lowest minimum possible VD

will be 2.3 V. Then the drain current will be,

Z .m n .Cox  1 2
ID =
L (VG − VT ).VD − 2 .VD 

30 x10 − 6 x10 2.200 x1.51x10 − 7  1 2

=
−6 2  2 (2 . 3)  = 2662.63mAmp
0.9 x10 x10
Prob. 6.28
For the given MOSFET, calculate the linear V T and k N , saturation V T and k N .

1. Choose V D ≪ V D (sat) to ensure that I D -V D curve is in the linear regime

e.g., choose V D = 0.2V
(1) V G = 4 V V D = 0.2 V I D = 0.35 mA
(2) V G = 5 V V D = 0.2 V I D = 0.62 mA
In linear regime
(3) I D = k N [(V G – V T )V D – V D 2/2]

From equation (3), inserting the values from (1) and (2)

0.35 · 10-3 = k N [(4 - V T )(0.2)]

0.62 · 10-3 = k N [(5 - V T )(0.2)]
0.35/0.62 = (4 - V T ) / (5 - V T )
1.75 – 0.35V T = 2.48 – 0.62V T
V T = 2.71V, therefore, k N = 1.36 · 10-3 A/V2

2. Choose V D >>V D (sat) to ensure that I D -V D curve is in the saturation regime

e.g. choose V D = 3V
(4) V G = 4 V VD = 3 V I D = 0.74 mA
(5) V G = 5 V VD = 3 V I D = 1.59 mA
In saturation regime
(6) I D = (1/2) k N (V G – V T )2

kN
0.74 ⋅10-3 = (4V - VT ) 2
2
k
1.59 ⋅10-3 = N ⋅ (5V - VT ) 2
2
0.74 (4V - VT ) 2
=
1.59 (5V - VT ) 2
VT =1.85V, k N =3.20 ⋅10-4 A/V 2
 Prob. 6.29
For Problem 6.28, calculate the gate oxide thickness and the substrate doping either
graphically or iteratively.
Z
(a) k N = ⋅ μ n ⋅ Ci
L
use k N from Problem 6.22 and μ n =500 cm
2

V⋅s

100μm
1.36 ⋅10-3 ⋅ 500 cm
V⋅s ⋅ Ci
2
A
V2
=
2μm
∈i 3.9 ⋅ 8.85 ⋅10-14 F
Ci = 5.42 ⋅10-8 F
=
cm 2
= cm
d d
d = 6.36 ⋅10 cm = 636Å
-6

Q
(b)VT = VFB + 2 ⋅ φF - d
Ci
Qd q⋅∈s ⋅N a ⋅ φF
2.71V = 2 ⋅ φF - = 2 ⋅ φF -
Ci Ci
start from φF 0.3V
= = (note: since VT 2.71 V, it cannot be PMOS)
Step 1:
2 ⋅ 1.6 ⋅10-19 C ⋅11.8 ⋅ 8.85 ⋅10-14 F
cm ⋅ N a ⋅ 0.3V
2.71V = 0.6V +
5.42 ⋅10 F -8

N a = 6.523 ⋅10 16 1
cm3

kT N 6.37 ⋅10 16 1
φF = ⋅ ln a = 0.0259V ⋅ ln cm3
= 0.395V
q ni 1.5 ⋅1010 1
cm3

Step 2:
2 ⋅ 1.6 ⋅10-19 C ⋅11.8 ⋅ 8.85 ⋅10-14 F
cm ⋅ N a ⋅ 0.395V
2.71V=0.792V+
5.42 ⋅10 F -8

N a =4.08 ⋅10 cm
16 -3

kT N 4.08 ⋅10 16 1
φF = ⋅ ln a = 0.0259V ⋅ ln cm3
= 0.384V
q ni 1.5 ⋅1010 1
cm3

Step 3:
2 q⋅∈s ⋅N a ⋅ φF
2.71V=0.767+
Cox
N a = 4.22 ⋅1016 1
cm3
→ φF = 0.385 V
gives a self-consistent set of values
n-channel MOSFET, N a = 4.22 ⋅1016 1
cm3
Prob. 6.30
For an n-channel MOSFET with gate oxide thickness of 20 nm, calculate the required
phosphorous (P ions/cm2) to be doped to reduce the threshold voltage from 1.5 V to 1 V. If
the P ion implantation takes place for 15 seconds with a beam current of amount 10-6 Amp,
then what scan area will be covered by the implanted beam?

3.9 x8.854 x10 −14

Oxide capacitance, Cox = = 1.7265 x10 − 7 F/cm2.
−7
20 x10
Let the Phosphorous ion dose is designated as, FP, then,

1.727 x10 − 7
FP =
Cox
[
. VT , new − VT , old = ] [1 − 1.5] = 0.269 x1012 /cm2.
q 1.6 x10 −19

BeamCurrentxt
We know, + iondosexq
Area

10 − 6 x15
Scanned area, = = 348.5 cm2.
12 −19
0.269 x10 x1.6 x10

Prob. 6.31
In Problem 6.5, calculate the depletion charge (Q D ) and the threshold voltage (V T ). Now
suppose a reverse bias of 0.4 V is applied between the substrate and the source, how will it
affect the V T due to evolved substrate bias effect?

From problem 6.5, we collected:

Cox = 3.45 x10 − 9 F/cm2 Wm = 0.348 x10 − 3 cm

φms = −0.2732 V N A = 1x1017 /cm3

φ F = 0.4069 V VT = −0.267 V
Now depletion charge/ unit area will be,

QD = −q.N A .Wm = −1.6 x10 −19 x1017 x0.348 x10 − 3 = −0.5568 x10 − 5 C/cm2.

Now due to application of reverse bias, the depletion charge/ unit area will change to,

QD ' = −[2.ε S .q.N A .(2φ F − VB )]1 / 2

[
= 2 x11.8 x8,854 x10 −14 x1.6 x10 −19 x1017 x(0.8138 + 0.4 ) ]1/ 2 = −26.04x10− 4 C / cm2
The change in V T due to substrate bias effect will be,

∆VT =
2.ε S .N A
Cox
[
. (2φ F − VB )1 / 2 − (2φ F )1 / 2 ]
=
2 x11.8 x8.854 x10 −14.x1.6 x10 −19 x1017
3.45 x10 − 9
[
. (0.8138 + 0.4 )1 / 2 − (0.8138)1 / 2 ]
= 1.059 x105V
Due to substrate bias effect V T increases enormously.

Prob. 6.32
Plot the drain characteristics for an n+-polysilicon-SiO 2 -Si p-channel transistor with
o
Nd =
1016 cm1 3 , Qi = 100 A, m p =
5 ⋅1010 q, d = V ⋅s , and Z =
2
200 cm 10 L .
Prob. 6.33
For the transistor in Problem 6-32 with L=1μm, calculate the cutoff frequency above
pinch-off.
gm
fc ;
2πCi LZ
For p-channel, we must include a minus sign in Equation 6-54 for positive g m .
1 Z μp
fc = ⋅ ⋅ μ p ⋅ Ci ⋅ (VT -VG ) = ⋅ (VT -VG )
2πCi LZ L 2πL2
2
200 cm
For VG =-5V, f c = V⋅s
⋅ (-1.1- -5V) = 12.4GHz
2π ⋅ (10-4 cm) 2
2
200 cm
For VG =-3V, f c = V⋅s
⋅ (-1.1- -3V) = 6GHz
2π ⋅ (10 cm) 2
-4
Prob. 6.34

∂I D'
Derive the drain conductance g D' = beyond saturation in terms of the effective
∂VD
channel length L-ΔL and then in terms of V D .
Using L′ in Equation 6-53,
Z L L
I′D = 12 μ n Ci (VG -VT ) 2 = I D,SAT ⋅ = I D,SAT ⋅
L′ L′ L-DL
-1
∂I′D ∂ L ∂  DL 
g′D = = I D,SAT ⋅ = I D,SAT ⋅ 1- 
∂VD ∂VD L-DL ∂VD  L 
-1 -2
∂  DDL  L   1  ∂DL
1-  = -1 ⋅ 1-  ⋅- ⋅
∂VD  L   L   L  ∂VD
1
-2
 DL   1  ∂  2 ∈s (VD -VD,SAT )  2
= -1 ⋅ 1-  ⋅- ⋅  
 L   L  ∂VD  qN a 
1
-2 -
 DL   1  1 2 ∈s  2 ∈s (VD -VD,SAT )  2
= -1⋅ 1-  ⋅- ⋅ ⋅  
 L   L  2 qN a  qN a 
-2
 1
 -
1
∂I′D  ∈    ∈  ∈ 
= I D,SAT ⋅ -1⋅ L2  L-  s D D,SAT   ⋅  -  ⋅ ⋅ s  s D D,SAT 
2 (V -V ) 2
1 1 2 2 (V -V ) 2
g′D =
∂VD  
  qN a    L  2 qN a  qN a 
 
1
 2∈  2
I D,SAT ⋅ L ⋅  s 
∂I′  qN a 
g′D = D =
∂VD  1 2

  2 ∈s (VD -VD,SAT )  2  1
2 ⋅ L-    ⋅ (V -V ) 2
 D D,SAT
  qN a  
 
Prob. 6.35
An n-channel MOSFET has a 1μm long channel with N a = 1016 1
cm3
and N d = 1020 1
cm3
in
the source and drain. Find the V D which causes punch-through.

 Na Nd   1016 cm1 3 ⋅1020 cm1 3 

Vo = kT ⋅ ln  2  = 0.0259V ⋅ ln   = 0.933V
 ni   (1.5 ⋅1010 1 3 ) 2 
 cm 
There are two depletion regions, one at the source end and one at the drain end of the channel.
N d ? N a so most of W is in the p-side (channel).
At the (zero-bias) source end,
1 1

 2 ∈ V 2  2 ⋅11.8 ⋅ 8.85 ⋅10-14 cmF 2 ⋅ 0.993V  2

x pS =  s o  =   = 0.35μm
 q ⋅ Na   1.609 ⋅ 10 -19
C ⋅ 1016 1 
 cm 3

1
 2 ∈ ( V + VD )  2
In the drain end, x pD =  s o 
 q ⋅ Na 
Punch-through occurs when x pD = L - x pS = 0.65μm
(0.65 ⋅10-4 cm) 2 ⋅1.609 ⋅10-19 C ⋅1016 1
0.933V + VD = cm3
→ VD = 2.3V
2 ⋅11.8 ⋅ 8.85 ⋅10-14 F
cm 2