CES2331

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-20V, -4.2A, RDS(ON) = 48mΩ @VGS = -4.5V.

RDS(ON) = 65mΩ @VGS = -2.5V.
RDS(ON) = 95mΩ @VGS = -1.8V.
High dense cell design for extremely low RDS(ON).
D
Rugged and reliable.

Lead free product is acquired.

SOT-23 package.

G
D
S

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted

Parameter Symbol Limit Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS ±8 V
Drain Current-Continuous ID -4.2 A
Drain Current-Pulsed a
IDM -15 A

Maximum Power Dissipation PD 1.25 W

Operating and Store Temperature Range TJ,Tstg -55 to 150 C

Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient b RθJA 100 C/W

Rev 2. 2007.Feb
Details are subject to change without notice . http://www.cetsemi.com
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 CES2331
Electrical Characteristics TA = 25 C unless otherwise noted

Parameter Symbol Test Condition Min Typ Max Units

Off Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -20 V
Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V -1 µA
Gate Body Leakage Current, Forward IGSSF VGS = 8V, VDS = 0V 100 nA
Gate Body Leakage Current, Reverse IGSSR VGS = -8V, VDS = 0V -100 nA
On Characteristics c
Gate Threshold Voltage VGS(th) VGS = VDS, ID = -250µA -0.4 -0.9 V

Static Drain-Source
RDS(on)
VGS = -4.5V, ID = -3.3A 38 48 mΩ
7
VGS = -2.5V, ID = -2.8A 50 65 mΩ
On-Resistance
VGS = -1.8V, ID = -2A 70 95 mΩ
Dynamic Characteristics d

Input Capacitance Ciss 1170 pF

VDS = -10V, VGS = 0V,
Output Capacitance Coss f = 1.0 MHz 220 pF
Reverse Transfer Capacitance Crss 135 pF
Switching Characteristics d
Turn-On Delay Time td(on) 14 30 ns
Turn-On Rise Time tr VDD = -10V, ID = -4A, 9 20 ns
VGS = -4.5V, RGEN = 3Ω
Turn-Off Delay Time td(off) 74 150 ns
Turn-Off Fall Time tf 35 70 ns
Total Gate Charge Qg 10 13 nC
VDS = -10V, ID = -4A,
Gate-Source Charge Qgs VGS = -4.5V 1.3 nC
Gate-Drain Charge Qgd 2.8 nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b IS -4.2 A
Drain-Source Diode Forward Voltage c VSD VGS = 0V, IS = -1.6A -1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.

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 CES2331
20 10
-VGS=4.5,3.5,3.0V 25 C
16 8
-ID, Drain Current (A)

-ID, Drain Current (A)

12 6

8 4
-VGS=2.5V
4 2 TJ=150 C -55 C

-VGS=2.0V
0 0
0.0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0

-VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics Figure 2. Transfer Characteristics

1500 2.2
ID=-3.3A
RDS(ON), On-Resistance(Ohms)

VGS=-4.5V
1250 Ciss 1.9
C, Capacitance (pF)

RDS(ON), Normalized

1000 1.6

750 1.3

500 1.0

Coss
250 0.7
Crss
0 0.4
0 2 4 6 8 10 -100 -50 0 50 100 150 200

-VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C)

Figure 3. Capacitance Figure 4. On-Resistance Variation

with Temperature
1.3
VDS=VGS VGS=0V
Gate-Source Threshold Voltage

-IS, Source-drain current (A)

1.2 ID=-250µA

1
1.1 10
VTH, Normalized

1.0

0.9
0
10
0.8

0.7

-1
0.6 10
-50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4

TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation Figure 6. Body Diode Forward Voltage

with Temperature Variation with Source Current

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 CES2331
2
5 V =-10V 10
-VGS, Gate to Source Voltage (V)

DS RDS(ON)Limit
ID=-4A
4

-ID, Drain Current (A)

1
10 1ms
10ms
3 100ms
0
10 1s
DC
2
-1
10
1 TA=25 C
TJ=150 C
-2 Single Pulse
0 10
0 2 4 6 8 10 10
-1
10
0
10
1
10
2
7
Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V)

Figure 7. Gate Charge Figure 8. Maximum Safe

Operating Area

VDD
t on toff
RL td(on) tr td(off) tf
V IN 90%
90%
D VOUT
VGS VOUT 10% INVERTED 10%
RGEN G
90%
50% 50%
S VIN
10%

PULSE WIDTH

Figure 9. Switching Test Circuit Figure 10. Switching Waveforms

0
10
Transient Thermal Impedance

D=0.5
r(t),Normalized Effective

0.2
-1
10 0.1

0.05
PDM
0.02
-2 0.01 t1
10 t2

1. RθJA (t)=r (t) * RθJA

Single Pulse 2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
-3
10
-4 -3 -2 -1 0 1 2
10 10 10 10 10 10 10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve