HSPICE® Reference

Manual: Elements and

Device Models
Version E-2010.12, December 2010
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ii HSPICE® Reference Manual: Elements and Device Models

E-2010.12
 Contents

Inside This Manual. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xi

The HSPICE Documentation Set. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xiii
Customer Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xiv
Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xv

1. Overview of Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Using Models to Define Netlist Elements. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Supported Models for Specific Simulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Selecting Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Subcircuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Safe Operating Area Warnings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Model LEVEL Parameter Must be a Constant Value . . . . . . . . . . . . . . . . . . . . 6
Use of Example Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2. Passive Device Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Resistor Device Model and Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Wire RC Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Resistor and Wire RC Model Parameter Example . . . . . . . . . . . . . . 10
Resistor Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Resistor Model Selector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Resistor Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Wire Resistance Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Wire Capacitance Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Resistor Noise Equation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Resistor Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Noise Parameter for Resistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Evaluating Flicker Noise of Resistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
LEVEL2 CMC R2 Resistor Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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LEVEL 2 Model Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

LEVEL 5 CMC R3 Resistor Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Level 5 Instance and Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . 25
CMC R3 Usage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Capacitor Device Model and Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Capacitance Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Parameter Limit Checking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Capacitor Device Equations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Effective Capacitance Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Capacitance Voltage Equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Capacitance Temperature Equation . . . . . . . . . . . . . . . . . . . . . . . . 35
Inductor Device Model and Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Inductor Core Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Inductor Device Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Checking Parameter Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Inductor Temperature Equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Jiles-Atherton Ferromagnetic Core Model . . . . . . . . . . . . . . . . . . . . . . . 41
Discontinuities in Inductance Due to Hysteresis . . . . . . . . . . . . . . . . . . . 45
Optimizing the Extraction of Parameters . . . . . . . . . . . . . . . . . . . . . . . . . 46

3. Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Diode Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Using Diode Model Statements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Setting Control Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Bypassing Latent Devices (HSPICE only) . . . . . . . . . . . . . . . . . . . . 51
Setting Scaling Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51
Using the Capacitor Equation Selector Option — DCAP . . . . . . . . . 51
Using Control Options for Convergence . . . . . . . . . . . . . . . . . . . . . . 52
Specifying Junction Diode Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Using the Junction Model Statement . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Using Junction Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Geometric Scaling for Diode Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
LEVEL=1 Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
LEVEL=3 Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Defining Diode Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Diode Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Using Diode Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 64
Determining Temperature Effects on Junction Diodes . . . . . . . . . . . . . . . 66
Using Junction Diode Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69

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Using Junction DC Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

Using Diode Capacitance Equations . . . . . . . . . . . . . . . . . . . . . . . . 73
Using Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Temperature Compensation Equations . . . . . . . . . . . . . . . . . . . . . . 75
Using the JUNCAP Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
JUNCAP1 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
JUNCAP Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
ON/OFF Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
DC Operating Point Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Temperature, Geometry and Voltage Dependence . . . . . . . . . . . . . 85
JUNCAP Capacitor and Leakage Current Model . . . . . . . . . . . . . . . 87
JUNCAP2 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
JUNCAP2 Model Updates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Usage in HSPICE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Using the Fowler-Nordheim Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Fowler-Nordheim Diode Model Parameters LEVEL=2. . . . . . . . . . . . . . . 95
Using Fowler-Nordheim Diode Equations . . . . . . . . . . . . . . . . . . . . . . . . 96
Fowler-Nordheim Diode Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Philips D500 Model (Advanced Diode Model), Level 5 . . . . . . . . . . . . . . . . . . 97
Using the Philips D-500 Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Equivalent Circuits and Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Converting National Semiconductor Models . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Using the Scaled Diode Subcircuit Definition. . . . . . . . . . . . . . . . . . . . . . 106
DC Operating Point Output of Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107

4. JFET and MESFET Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109

Overview of JFETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Specifying a Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Bypassing Latent Devices (HSPICE Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Overview of Capacitor Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Model Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Convergence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Capacitor Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
JFET and MESFET Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

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Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
JFET Current Conventions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
JFET Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Output Conductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
JFET and MESFET Model Statements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
JFET and MESFET Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . 120
ACM (Area Calculation Method) Parameter Equations . . . . . . . . . . 128
JFET and MESFET Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Gate Capacitance CAPOP=0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Gate Capacitance CAPOP=1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Gate Capacitance CAPOP=2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Capacitance Comparison (CAPOP=1 and CAPOP=2) . . . . . . . . . . . . . . 134
JFET and MESFET DC Equations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
DC Model LEVEL=1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
DC Model LEVEL=2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
DC Model LEVEL=3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
JFET and MESFET Noise Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
JFET and MESFET Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Temperature Compensation Equations . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Energy Gap Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . 142
Saturation Current Temperature Equations . . . . . . . . . . . . . . . . . . . 143
Gate Capacitance Temperature Equations . . . . . . . . . . . . . . . . . . . 143
Threshold Voltage Temperature Equation . . . . . . . . . . . . . . . . . . . . 144
Mobility Temperature Equation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Parasitic Resistor Temperature Equations . . . . . . . . . . . . . . . . . . . . 145
TriQuint (TOM) Extensions to LEVEL=3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
LEVEL=7 TOM3 (TriQuint’s Own Model III) . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Using the TOM3 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Model Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
DC Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Capacitance Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
LEVEL=8 Materka Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Using the Materka Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
DC Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Gate Capacitance Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Noise Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157

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5. BJT Models. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159

Overview of BJT Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Selecting Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
BJT Control Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Convergence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
BJT Model Statement. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
BJT Basic Model Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Bypassing Latent Devices (HSPICE Only) . . . . . . . . . . . . . . . . . . . . 163
Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
BJT Model Temperature Effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
BJT Device Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
BJT Current Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
BJT Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
BJT Model Equations (NPN and PNP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Transistor Geometry in Substrate Diodes . . . . . . . . . . . . . . . . . . . . . . . . 188
DC Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Substrate Current Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Base Charge Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Variable Base Resistance Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
BJT Capacitance Equations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Base-Emitter Capacitance Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Determining Base-Emitter Diffusion Capacitance . . . . . . . . . . . . . . 193
Determining Base-Emitter Depletion Capacitance . . . . . . . . . . . . . 194
Determining Base Collector Capacitance . . . . . . . . . . . . . . . . . . . . 195
Determining Base Collector Diffusion Capacitance . . . . . . . . . . . . 195
Determining Base Collector Depletion Capacitance . . . . . . . . . . . . 195
External Base — Internal Collector Junction Capacitance . . . . . . . 196
Substrate Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Substrate Capacitance Equation: Lateral . . . . . . . . . . . . . . . . . . . . 197
Substrate Capacitance Equation: Vertical . . . . . . . . . . . . . . . . . . . . 197
Excess Phase Equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Defining BJT Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
Defining Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198
BJT Temperature Compensation Equations . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Energy Gap Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Saturation/Beta Temperature Equations, TLEV=0 or 2 . . . . . . . . . . . . . . 200

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Saturation and Temperature Equations, TLEV=1. . . . . . . . . . . . . . . . . . . 201

Saturation Temperature Equations, TLEV=3 . . . . . . . . . . . . . . . . . . . . . . 202
Capacitance Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
Parasitic Resistor Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . 205
BJT LEVEL=2 Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . 205
BJT Quasi-Saturation Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Epitaxial Current Source Iepi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208
Epitaxial Charge Storage Elements Ci and Cx . . . . . . . . . . . . . . . . . . . . 209
Converting National Semiconductor Models . . . . . . . . . . . . . . . . . . . . . . . . . . 211
Defining Scaled BJT Subcircuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
VBIC Bipolar Transistor Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
History of VBIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
VBIC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Noise Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
Self-heating and Excess Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . 220
Notes on Using VBIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221
LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503) . . . . . . . . . . . . . . . . . 222
LEVEL=6 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
LEVEL=6 Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 224
LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504) . . . . . . . . . . . . . . . . . 228
Notes on Using MEXTRAM 503 or 504 Devices . . . . . . . . . . . . . . . . . . . 230
LEVEL=6 Model Parameters (504) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 231
Mextram 504 Update Releases . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
LEVEL=8 HICUM Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
HICUM Model Advantages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 243
HSPICE HICUM Model vs. Public HICUM Model . . . . . . . . . . . . . . . . . . 245
LEVEL=8 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 246
HICUM LEVEL=2 Circuit Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 247
Input Netlist . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 248
LEVEL=8 Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 249
Internal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 251
Peripheral Elements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 255
External Elements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 256
LEVEL=9 VBIC99 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 263
Usage Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 264
LEVEL=9 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 264
Effects of VBIC99. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265

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 Contents

Model Implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265

LEVEL=9 Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 266
LEVEL=10 Philips MODELLA Bipolar Model. . . . . . . . . . . . . . . . . . . . . . . . . . 272
Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277
DC Operating Point Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278
Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280
Early Factors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280
Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 281
Base Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 282
Substrate current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 283
Charges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 284
Series Resistances. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 287
Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 287
Temperature Dependence of Parameters . . . . . . . . . . . . . . . . . . . . . . . . 288
Series Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289
Depletion Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 289
Temperature Dependence of Other Parameters . . . . . . . . . . . . . . . 289
LEVEL=11 UCSD HBT Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291
Usage Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291
LEVEL=11 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 292
Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 298
Current Flow. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 298
Charge Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300
Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 306
Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 307
Example Model Statement for BJT LEVEL=11 . . . . . . . . . . . . . . . . . . . . 309
LEVEL=13 HICUM0 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309
HICUM0 Model Advantages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 309
HICUM0 Model vs. HICUM LEVEL=2 Model . . . . . . . . . . . . . . . . . . . . . . 310
LEVEL=13 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310
LEVEL=13 Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 311
References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 316

A. Finding Device Libraries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 317

Overview of Library Listings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 317
Analog Device Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 318
Behavioral Device Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 322
Bipolar Transistor Models. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 323

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Contents

Diode Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 324

JFET and MESFET Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 327
Transmission Line Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 329

Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 331

x
 About This Manual

This manual describes standard models that you can use when simulating your
circuit designs in HSPICE or HSPICE RF:
■
Passive devices
■ Diodes
■
JFET and MESFET devices
■
BJT devices

Inside This Manual

This manual contains the chapters described below. For descriptions of the
other manuals in the HSPICE documentation set, see the next section, The
HSPICE Documentation Set.

Chapter Description

Chapter 1, Overview of Describes the elements and models you can use
Models to create a netlist in HSPICE.

Chapter 2, Passive Device Describes passive devices you can include in an

Models HSPICE netlist, including resistor, inductor, and
capacitor models.

Chapter 3, Diodes Describes model parameters and scaling effects

for geometric and nongeometric junction diodes.

Chapter 4, JFET and Describes how to use JFET and MESFET

MESFET Models models in HSPICE circuit simulations.

Chapter 5, BJT Models Describes how to use BJT models in HSPICE

circuit simulations.

Appendix A, Finding Device Lists device libraries you can use in HSPICE.
Libraries

HSPICE® Reference Manual: Elements and Device Models xi

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The HSPICE Documentation Set

The HSPICE Documentation Set

This manual is a part of the HSPICE documentation set, which includes the
following manuals:

Manual Description

HSPICE User Guide: Describes how to use HSPICE to simulate and

Simulation and Analysis analyze your circuit designs, and includes simulation
applications. This is the main HSPICE user guide.

HSPICE User Guide: Describes how to use HSPICE to maintain signal

Signal Integrity integrity in your chip design.

HSPICE User Guide: RF Describes how to use special set of analysis and
Analysis design capabilities added to HSPICE to support RF
and high-speed circuit design.

HSPICE Reference Provides reference information for HSPICE and

Manual: Commands and HSPICE RF commands and options.
Control Options

HSPICE Reference Describes available MOSFET models you can use

Manual: MOSFET when simulating your circuit designs in HSPICE.
Models

HSPICE Integration to Describes use of the HSPICE simulator integration to

CadenceTM Virtuoso® the Cadence tool.
Analog Design
Environment User Guide

AMS Discovery Describes use of the Simulation Interface with other

Simulation Interface EDA tools for HSPICE.
Guide for HSPICE

AvanWaves User Guide Describes the AvanWaves tool, which you can use to
display waveforms generated during HSPICE circuit
design simulation.

xii HSPICE® Reference Manual: Elements and Device Models

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 Conventions

Searching Across the HSPICE Documentation Set

Synopsys includes an index with your HSPICE documentation that lets you
search the entire HSPICE documentation set for a particular topic or keyword.
In a single operation, you can generate a list of hits that are hyper-linked to the
occurrences of your search term. For information on how to perform searches
across multiple PDF documents, see the HSPICE release notes.

Note: To use this feature, the HSPICE documentation files, the Index
directory, and the index.pdx file must reside in the same
directory. (This is the default installation for Synopsys
documentation.) Also, Adobe Acrobat must be invoked as a
standalone application rather than as a plug-in to your web
browser.

You can also invoke HSPICE and RF documentation in a browser-based help

system by entering-help on your terminal command line when the HSPICE
tool is open. This provides access to all the HSPICE manuals with the
exception of the AvanWaves User Guide which is available in PDF format only.

Conventions
The following typographical conventions are used in Synopsys HSPICE
documentation.

Convention Description

Courier Indicates command syntax.

Italic Indicates a user-defined value, such as object_name.

Bold Indicates user input — text you type verbatim — in syntax and
examples. Bold indicates a GUI element.

[ ] Denotes optional parameters, such as:

write_file [-f filename]

... Indicates that parameters can be repeated as many times as

necessary:
pin1 pin2 ... pinN

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Customer Support

Convention Description

| Indicates a choice among alternatives, such as

low | medium | high

+ Indicates a continuation of a command line.

/ Indicates levels of directory structure.

Edit > Copy Indicates a path to a menu command, such as opening the
Edit menu and choosing Copy.

Control-c Indicates a keyboard combination, such as holding down the

Control key and pressing c.

Customer Support
Customer support is available through SolvNet online customer support and
through contacting the Synopsys Technical Support Center.

Accessing SolvNet
SolvNet includes an electronic knowledge base of technical articles and
answers to frequently asked questions about Synopsys tools. SolvNet also
gives you access to a wide range of Synopsys online services, which include
downloading software, viewing Documentation on the Web, and entering a call
to the Support Center.
To access SolvNet:
1. Go to the SolvNet Web page at http://solvnet.synopsys.com.
2. If prompted, enter your user name and password. (If you do not have a
Synopsys user name and password, follow the instructions to register with
SolvNet.)
If you need help using SolvNet, click Help on the SolvNet menu bar.
The link to any recorded training is
https://solvnet.synopsys.com/trainingcenter/view.faces

xiv HSPICE® Reference Manual: Elements and Device Models

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 Acknowledgments

Access recent release update training by going to

https://solvnet.synopsys.com/search/advanced_search.faces

Contacting the Synopsys Technical Support Center

If you have problems, questions, or suggestions, you can contact the Synopsys
Technical Support Center in the following ways:
■
Open a call to your local support center from the Web by going to
http://solvnet.synopsys.com/EnterACall (Synopsys user name and
password required).
■
Send an e-mail message to your local support center.
• E-mail [email protected] from within North America.
• Find other local support center e-mail addresses at
http://www.synopsys.com/support/support_ctr.
■
Telephone your local support center.
• Call (800) 245-8005 from within the continental United States.
• Call (650) 584-4200 from Canada.
• Find other local support center telephone numbers at
http://www.synopsys.com/support/support_ctr.

Acknowledgments
Portions Copyright (c) 1985-90 by Kenneth S. Kundert and the University of
California.
Portions Copyright (c) 1988-90 Regents of the University of California.

HSPICE® Reference Manual: Elements and Device Models xv

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Acknowledgments

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 1
1 Overview of Models

Describes the elements and models you can use to create a netlist in HSPICE
and HSPICE RF.

HSPICE ships hundreds of examples for your use; see Listing of

Demonstration Input Files for paths to demo files.
A circuit netlist describes the basic functionality of an electronic circuit that you
are designing. In HSPICE format, a netlist consists of a series of elements that
define the individual components of the overall circuit. You can use your
HSPICE-format netlist to simulate your circuit to help you verify, analyze, and
debug your design, before you turn that design into an actual electronic circuit.
Your netlist can include several types of elements:
■ Passive elements, see Chapter 2, Passive Device Models
• Resistors
• Capacitors
• Inductors
• Mutual Inductors
■
Active elements:
• Diodes, see Chapter 3, Diodes
• Junction Field Effect Transistors (JFETs), see Chapter 4, JFET and
MESFET Models
• Metal Semiconductor Field Effect Transistors (MESFETs), see Chapter
4, JFET and MESFET Models
• Bipolar Junction Transistors (BJTs), see Chapter 5, BJT Models
■ Transmission lines (see the HSPICE Signal Integrity Guide):
• S element

HSPICE® Reference Manual: Elements and Device Models 1

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Chapter 1: Overview of Models
Using Models to Define Netlist Elements

• T element
• U element
• W element
■
Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), see the
HSPICE MOSFET Models Manual.
This chapter discusses these topics:
■
Using Models to Define Netlist Elements
■
Supported Models for Specific Simulators
■
Subcircuits
■
Safe Operating Area Warnings
■
Model LEVEL Parameter Must be a Constant Value
■
Use of Example Syntax

Using Models to Define Netlist Elements

A series of standard models have been provided with the software. Each model
is like a template that defines various versions of each supported element type
used in an HSPICE-format netlist. Individual elements in your netlist can refer
to these standard models for their basic definitions. When you use these
models, you can quickly and efficiently create a netlist and simulate your circuit
design.
Eight different versions (or levels) of JFET and MESFET models for use with
HSPICE are supplied. An individual JFET or MESFET element in your netlist
can refer to one of these models for its definition. That is, you do not need to
define all of the characteristics (called parameters) of each JFET or MESFET
element within your netlist.
Referring to standard models in this way reduces the amount of time required
to:
■
Create the netlist.
■
Simulate and debug your circuit design.
■
Turn your circuit design into actual circuit hardware.

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 Chapter 1: Overview of Models
Supported Models for Specific Simulators

Within your netlist, each element that refers to a model is known as an instance
of that model. When your netlist refers to predefined device models, you reduce
both the time required to create and simulate a netlist, and the risk of errors,
compared to fully defining each element within your netlist.

Supported Models for Specific Simulators

This manual describes individual models that have been provided. HSPICE
supports a specific subset of the available models. This manual describes the
Synopsys device models for passive and active elements. You can include
these models in HSPICE-format netlists.

Selecting Models
To specify a device in your netlist, use both an element and a model statement.
The element statement uses the simulation device model name to reference
the model statement. The following example uses the MOD1 name to refer to a
BJT model. The example uses an NPN model type to describe an NPN
transistor.
Q3 3 2 5 MOD1 <parameters>
.MODEL MOD1 NPN <parameters>

You can specify parameters in both element and model statements. If you
specify the same parameter in both an element and a model, then the element
parameter (local to the specific instance of the model) always overrides the
model parameter (global default for all instances of the model, if you do not
define the parameter locally).
The model statement specifies the type of device — for example, a BJT, the
device type might be NPN or PNP.

Subcircuits
X<subcircuit_name> adds an instance of a subcircuit to your netlist. You must
already have defined that subcircuit in your netlist by using a .MACRO
or .SUBCKT command.

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Chapter 1: Overview of Models
Subcircuits

If you initialize a non-existent subcircuit node, HSPICE or HSPICE RF

generates a warning message. This can occur if you use an existing .ic file
(initial conditions) to initialize a circuit that you modified since you created
the .ic file.
Syntax
X [subcircuit_name] n1 [n2 n3 …] subnam
[parnam = val &] [M = val] [S=val] [DTEMP=val]

Argument Definition

X subcircuit_name Subcircuit element name. Must begin with an X, followed by up to

15 alphanumeric characters.

n1 … Node names for external reference.

subnam Subcircuit model reference name.

parnam A parameter name set to a value (val) for use only in the
subcircuit. It overrides a parameter value in the subcircuit
definition, but is overridden by a value set in a .PARAM statement.

M Multiplier. Makes the subcircuit appear as M subcircuits in

parallel. You can use this multiplier to characterize circuit loading.
HSPICE or HSPICE RF does not need additional calculation time
to evaluate multiple subcircuits. Do not assign a negative value or
zero as the M value.

S Scales a subcircuit. For more information about the S parameter,

see S (Scale) Parameter in the HSPICE User Guide: Simulation
and Analysis.
This keyword works only if you set .OPTION HIER_SCALE.

DTEMP Element temperature difference with respect to the circuit

temperature in Celsius. Default=0.0. This argument sets a
different temperature in subcircuits than the global temperature.
This keyword works only when the you set .OPTION XDTEMP.

Example 1
The following example calls a subcircuit model named MULTI. It assigns the
WN = 100 and LN = 5 parameters in the .SUBCKT statement (not shown).
The subcircuit name is X1. All subcircuit names must begin with X.
X1 2 4 17 31 MULTI WN = 100 LN = 5

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 Chapter 1: Overview of Models
Safe Operating Area Warnings

Example 2
This example defines a subcircuit named YYY. The subcircuit consists of two 1
ohm resistors in series. The .IC statement uses the VCC passed parameter to
initialize the NODEX subcircuit node.
.SUBCKT YYY NODE1 NODE2 VCC = 5V
.IC NODEX = VCC
R1 NODE1 NODEX 1
R2 NODEX NODE2 1
.EOM
XYYY 5 6 YYY VCC = 3V

Safe Operating Area Warnings

The following warning message is issued when terminal voltages of a device
(MOSFET, BJT, Diode, Resistor, Capacitor, etc.) exceed their safe operating
area (SOA):
**warning**(filename:line number) resulted during SOA check <node
voltage name> (=val) of <device/element name> has exceeded <node
voltage name>_max (=val)

To turn it off use .option WARN=0

See the following control options for details:

■
.OPTION WARN
■
.OPTION MAXWARN

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Chapter 1: Overview of Models
Model LEVEL Parameter Must be a Constant Value

Model LEVEL Parameter Must be a Constant Value

The LEVEL parameter may not be entered as an expression or by using single
quotation marks. Such action results in the following error message:
**error** (inv.sp:31) level should be defined as a constant value
and it cannot be an expression or in single quotes.

Use of Example Syntax

To copy and paste proven syntax use the demonstration files shipped with your
installation of HSPICE (see Listing of Demonstration Input Files). Attempting to
copy and paste from the book or help documentation may present unexpected
results, as text used in formatting may include hidden characters, white space,
etc. for visual clarity.

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 2
2 Passive Device Models

Describes passive devices you can include in an HSPICE or HSPICE RF netlist,

including resistor, inductor, and capacitor models.

HSPICE ships hundreds of examples for your use; see Listing of Input
Demonstration Files for paths to demo files.
You can use the set of passive model definitions in conjunction with element
definitions to construct a wide range of board and integrated circuit-level
designs. Passive device models let you include the following in any analysis:
■ Transformers
■
PC board trace interconnects
■
Coaxial cables
■ Transmission lines
The wire element model is specifically designed to model the RC delay and RC
transmission line effects of interconnects, at both the IC level and the PC board
level.
To aid in designing power supplies, a mutual-inductor model includes switching
regulators, and several other magnetic circuits, including a magnetic-core
model and element. To specify precision modeling of passive elements, you
can use the following types of model parameters:
■
Geometric
■ Temperature
■
Parasitic
These topics are covered in the following sections:
■ Resistor Device Model and Equations
■
Resistor Temperature Equations

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Chapter 2: Passive Device Models
Resistor Device Model and Equations

■
LEVEL2 CMC R2 Resistor Model
■
LEVEL 5 CMC R3 Resistor Model
■
Capacitor Device Model and Equations
■
Inductor Device Model and Equations

Resistor Device Model and Equations

The following section describes equations for Wire RC and Resistor models.

Wire RC Model
You can use the .MODEL statement to include a Wire RC model in your
HSPICE netlist and evaluate both thermal noise and flicker noise in HSPICE.
For a general description of the .MODEL statement, see .MODEL in the
HSPICE and RF Command Reference.
Syntax
.MODEL MNAME R KEYWORD=value [CRATIO=val]
The wire element RC model is a CRC (pi) model. Use the CRATIO wire model
parameter to allocate the parasitic capacitance of the wire element (between
the input capacitor and the output capacitor of the model). This allows for
symmetric node impedance for bidirectional circuits, such as buses.

Parameter Description

mname Model name. Elements use this name to reference the model.

R Specifies a wire model.

keyword Any model parameter name.

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 Chapter 2: Passive Device Models
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Parameter Description

CRATIO Ratio to allocate the total wire element parasitic capacitance. This is the
capacitance between the capacitor connected to the input node, and the
capacitor connected to the output node of the wire element pi model.
You can assign a value between 0 and 1 to CRATIO. Default=0.5

0 Assigns all of the parasitic capacitance (CAPeff) to the output node.

0.5 Assigns half of the parasitic capacitance to the input node, and half
to the output node.

1 Assigns all of the parasitic capacitance to the input node.

■ CRATIO values smaller than 0.5 assign more of the capacitance to

the output node than to the input node.
■ Values greater than 0.5 assign more of the capacitance to the input
node than to the output node.

If you set a CRATIO value outside the 0 to 1.0 range, simulation shows a
warning, sets CRATIO to 0.5, and continues the analysis.

in out

C=CAPeff⋅ CRATIO C=CAPeff ⋅ (1- CRATIO)

Figure 1 Wire Model Example

A wire-model resistor behaves like an elementary transmission line (see T-

element (Ideal Transmission Lines) in the HSPICE User Guide: Simulation and
Analysis, if the .MODEL statement specifies an optional capacitor (from the n2
node to a bulk or ground node). The bulk node functions as a ground plane for
the wire capacitance.
A wire has a drawn length and a drawn width. The resistance of the wire is the
effective length, multiplied by RSH, then divided by the effective width.
To avoid syntactic conflicts, if a resistor model uses the same name as a
parameter for rval in the element statement, then the simulation uses the model

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Chapter 2: Passive Device Models
Resistor Device Model and Equations

name. In the following example, R1 assumes that REXX refers to the model, and
not to the parameter.

Resistor and Wire RC Model Parameter Example

.PARAMETER REXX=1
R1 1 2 REXX
.MODEL REXX R RES=1

Wire RC Model Parameter Syntax

Rxxx n1 n2 [mname Rval] [TC1 TC2 TC] [SCALE=val] [M=val]
+ [AC=val] [DTEMP=val] [L=val] [W=val] [C=val]
+ [NOISE=val]
Rxxx n1 n2 [mname] [R=]resistance [TC1=val]
+ [TC2=val] [TC=val] [SCALE=val] [M=val]
+ [AC=val] [DTEMP=val] [L=val] [W=val] [C=val]
+ [NOISE=val]
Table 1 Wire Model Parameters

Name (Alias) Units Default Description

BULK gnd Default reference node for capacitance.

CAP F 0 Default capacitance.

CAPSW F/m 0 Sidewall fringing capacitance.

COX F/m2 0 Bottomwall capacitance.

DI 0 Relative dielectric constant.

DLR m 0 Difference between the drawn length and the

actual length (for resistance calculation only).
The capacitance calculation uses DW.
DLReff=DLR ⋅ SCALM

DW m 0 Difference between the drawn width and the

actual width.
DWeff=DW ⋅ SCALM

L m 0 Default length of the wire.

Lscaled=L ⋅ SHRINK ⋅ SCALM

LEVEL Model selector (not used).

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Resistor Device Model and Equations

Table 1 Wire Model Parameters (Continued)

Name (Alias) Units Default Description

RAC ohm Default AC resistance (the RACeff default is

Reff).

RES ohm 0 Default resistance.

RSH 0 Sheet resistance/square.

SHRINK 1 Shrink factor.

TC1C 1/deg 0 First-order temperature coefficient for

capacitance.

TC2C 1/deg2 0 Second-order temperature coefficient for

capacitance.

TC1R 1/deg 0 First-order temperature coefficient for

resistance.

TC2R 1/deg2 0 Second-order temperature coefficient for

resistance.

VC1R 1/volt 0 First-order voltage-bias coefficient for

resistance.

VC2R 1/volt^2 0 Second-order voltage-bias coefficient for

resistance.

THICK m 0 Dielectric thickness.

TREF deg C TNOM Temperature reference for model parameters.

W m 0 Default width of the wire. Wscaled=W ⋅

SHRINK ⋅ SCALM

Resistor Syntax
Rxxx n1 n2 mname [R=]resistance [TC1=val]
+ [TC2=val] [VC1=val] [VC2=val] [SCALE=val] [M=val] [AC=val]
+ [DTEMP=val] [L=val] [W=val] [C=val] [NOISE=val]

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Resistor Device Model and Equations

Supported instance parameters above include: R, TC1, TC2, SCALE, M, AC,

DTEMP, L, W, C, and NOISE.
TC1 and TC2 are aliases for TC1R and TC2R. Resistor syntax is described in
Resistor Elements in a HSPICE or HSPICE RF Netlist in the HSPICE User
Guide: Simulation and Analysis.

Resistor Model Selector

For multiple resistor models, you can use the automatic model selector in
HSPICE to find the proper model for each resistor.
The model selector syntax is based on a common model root name with a
unique extension for each model.
Example
.model REXX.1 R LMIN=0.5 LMAX=0.7 WMIN=0.1 WMAX=0.5 RES=1.2
.model REXX.2 R LMIN=0.7 LMAX=0.9 WMIN=0.1 WMAX=0.5 RES=1.3

You can then use the standard resistor model call to map the models to an
element declaration:
R1 1 2 REXX L=0.6 W=0.5

The resistor model selector uses the following criteria:

LMIN <= L < LMAX
WMIN <= W < WMAX

Resistor Model Equations

This section contains equations for different characteristics of resistors.

Wire Resistance Calculation

You can specify the wire width and length in both the element and model
statements. The element values override the model values.
■
To scale the element width and length, use .OPTION SCALE and the
SHRINK model parameter.
■
To scale the model width and length, use .OPTION SCALM and the SHRINK
model parameter.
The following equations calculate the effective width and length:

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Weff = Wscaled – 2 ⋅ DWeff

Leff = Lscaled – 2 ⋅ DLReff
If you specify element resistance:
R ⋅ SCALE ( element )
Reff = --------------------------------------------------------
M
Otherwise, if
( Weff ⋅ Leff ⋅ RSH )
is greater than zero, then:
Leff ⋅ RSH ⋅ SCALE ( element )
Reff = ---------------------------------------------------------------------------------
M ⋅ Weff

If ( Weff ⋅ Leff ⋅ RSH ) is zero, then:

RES ⋅ SCALE ( element )
Reff = ---------------------------------------------------------------
M
If you specify AC resistance in the element, then:
AC ⋅ SCALE ( element )
RACeff = ------------------------------------------------------------
M
Otherwise, if the model specifies RAC, the RACeff equation uses RAC:

RAC ⋅ SCALE ( element )

RACeff = ----------------------------------------------------------------
M
If the model does not specify either AC resistance or RAC, then the equation
defaults to:
RACeff = Reff
If the resistance is less than the RESMIN option, then the RACeff equation
resets it to the RESMIN value, and issues a warning message.
1
RESMIN = -------------------------------------------------
GMAX ⋅ 1000 ⋅ M

Wire Capacitance Calculation

The effective length is the scaled drawn length, less (2 ⋅ DLeff).

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Chapter 2: Passive Device Models
Resistor Device Model and Equations

■
Leff represents the effective length of the resistor, from physical edge to
physical edge.
■
DWeff is the distance from the drawn edge of the resistor to the physical
edge of the resistor.
The effective width is the same as the width used in the resistor calculation.
Leff = Lscaled – 2 ⇒DLeff
Weff = Wscaled – 2 ⇒DWeff
If you specify the element capacitance, C:
CAPeff = C ⋅ SCALE ( element ) ⋅ M
Otherwise, the equation calculates the capacitance from the Leff, Weff, and COX
values:
CAPeff = M ⋅ SCALE ( element ) ⋅ [ Leff ⋅ Weff ⋅ COX ]
+ 2 ⋅ ( Leff + Weff ) ⋅ CAPSW ]
Computing the bottom-wall capacitance, COX, is based on a hierarchy of
defaults and specified values, involving:
■
dielectric thickness (THICK)
■
relative dielectric constant (DI)
Whether you specify a COX value affects how HSPICE uses the equation:
■
If you specify COX=value, then the equation uses the value.
■
If you do not specify COX, but you do specify a value other than zero for
THICK (the dielectric thickness):
• If you specify a non-zero value for DI=value, then:
DI ⋅ ε o
COX = --------------------
THICK
• If you do not specify a DI value or if the value is zero, then:
ε ox
COX = -------------------
THICK
The following values apply to the preceding equation:
ε o = 8.8542149e-12 F/meter
ε ox = 3.453148e-11 F/meter

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 Chapter 2: Passive Device Models
Resistor Temperature Equations

■
If you do not specify COX, and THICK = 0, this is an error.
• If you specify only the model capacitance (CAP), then:
CAPeff = CAP ⋅ SCALE ( element ) ⋅ M
• If you specify the capacitance, but you do not specify the bulk node, then
the resistor model does not evaluate the capacitance, and issues a
warning message.

Resistor Noise Equation

The following equation models the thermal noise of a resistor:

4kT 1 / 2
inr = ⎛⎝ NOISE ⋅ ------------⎞⎠
Rval
In the preceding equation, NOISE is a model parameter (default=1). To
eliminate the contribution of resistor noise, specify the NOISE parameter in a
resistor model.

Parameter Description

RX Transfers the function of thermal noise to the output. This is not noise,
but is a transfer coefficient, which reflects the contribution of thermal
noise to the output. For example:
V(output) = I(local)*rx(from local to output)

Where V(output) is the noise voltage at the output port, I(local) is the
local noise current in the specific noise element.

It is clear that rx should have an unit of impedance, therefore we call it

transimpedance. By summarizing all the contributions (power) from
each independent noisy element, we can get the total noise
contribution(power) at the output port.

TOT, V2/Hz Total output noise: TOT = RX 2 ⋅ inr 2

Resistor Temperature Equations

You can use temperature values to set resistor and capacitor values:

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Chapter 2: Passive Device Models
Noise Parameter for Resistors

R ( t ) = R ⋅ ( 1.0 + TC1 ⋅ Δt + TC2 ⋅ Δt 2 )

RAC ( t ) = RAC ⋅ ( 1.0 + TC1 ⋅ Δt + TC2 ⋅ Δt 2 )

C ( t ) = C ⋅ ( 1.0 + TC1 ⋅ Δt + TC2 ⋅ Δt 2 )

Parameter Description

Δt t - tnom

t Element temperature in ° K: t = circuit temp + DTEMP + 273.15

tnom Nominal temperature in ° K: tnom = 273.15 + TNOM

Noise Parameter for Resistors

Resistor models generate electrical thermal noise. However, some tasks, such
as macro modeling, require noiseless resistor models.
■
If you set noise=1 (default) or if you do not specify the noise parameter,
HSPICE models a resistor that generates noise.
■
If you do not want the resistor model to generate thermal noise, set noise=0
in the instance statement (noiseless resistor model).
Example
This example is located in the following directory:
$installdir/demo/hspice/apps/noise.sp
In this example, rd is a 1-ohm noiseless resistor that connects between node 1
and node 6.

Evaluating Flicker Noise of Resistors

The following section describes the flicker noise equation and parameters, and
how to test for flicker noise in HSPICE.
The following equation supports the flicker noise model for resistors:

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AF
KF × ⎛⎝ I ⎞⎠
Noise ( sid ) = -----------------------------------------------------------------------
⎛ Leff Lf⎞ × ⎛ Weff Wf⎞ × ⎛ f Ef⎞
⎝ ⎠ ⎝ ⎠ ⎝ ⎠
Where

Parameter Description Unit

Noise(sid) Noise spectrum density A2 Hz

I Current A

Leff Effective length (Ldrawn - dL) m

Weff Effective width (Wdrawn - dw) m

f Frequency HZ

The following lists the parameters and descriptions for the flicker noise model

Parameter Description Unit Default Bin

KF flicker noise ( 2 – AF ) ( LF + WF ) ( EF – 1 ) 0 no
A × m × Hz
coefficient( ≥ 0
)

AF exponent of none 2 no
current (>0)

LF exponent of none 1 no
effective length
(>0)

WF exponent of none 1 no
effective
width(>0)

EF exponent of none 1 no
frequency(>0)

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Evaluating Flicker Noise of Resistors

Example of Using Flicker Noise Parameters

To use the flicker noise parameters in a resister model, specify the flicker noise
parameters (KF, AF, LF, WF and EF) in the resistor model card. For example:
.model Res1 R noise=1 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 l=1u
dlr=0.01u w=10u dw=0.01u

If these parameters are not specified, HSPICE uses their default values, and
the flicker noise will be 0. Observe that these parameters all have limitations:
KF ≥ 0 , AF, LF, WF and EF >0. If their values exceed the limitations, HSPICE
will issue warning messages.
The parameters l, w, dlr, dw must also be specified in the model card for
HSPICE to evaluate the effective length and width. If these parameters are not
specified, their default value is 0, so the effective length and width are 0, and
there will be a divide-by-zero error in the evaluation of the flicker noise
equation. HSPICE will abort and issue an error message.
Controlling the Evaluation of Noise
HSPICE uses the NOISE parameter in a model as a switch to control
evaluation of thermal and flicker noise. Its value is 0 or 1. For example:
.model Res1 R noise=1 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 l=1u
dlr=0.01u w=10u dw=0.01u
.model Res2 R noise=0 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 l=1u
dlr=0.01u w=10u dw=0.01u
R1 1 2 Res1 50
R2 2 3 Res2 50

In the above example, resistor R1 uses model Res1 which specifies noise=1,
and resistor R2 uses model Res2 which specifies noise=0. The noise analysis,
R1 has noise and R2 is noise-free. The default value of model parameter
NOISE is 1.
Instance of Parameter NOISE: Noiseless Resistor
Sometimes a noiseless resistor is required. The resistor can be noiseless even
if there are noise parameters set in the model. This is because the parameter
NOISE can be both an instance parameter and a model parameter. If NOISE is
set in both the instance and the model, the instance parameter will override the
model parameter. For example:

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.model Res1 R noise=1 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 l=1u

dlr=0.01u w=10u dw=0.01u
.model Res2 R noise=0 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 l=1u dlr=0.01u
w=10u dw=0.01u
R1 1 2 Res1 50
R2 2 3 Res2 50
R3 3 4 Res1 50 noise=0
R4 4 5 Res2 50 noise=1

In the example, resistors R1 and R3 use model Res1 and resistors R2 and R4
use model Res2. R1 will have noise and R2 will be noiseless since these
resistors will use the noise parameter defined in the model. Resistor R3 is
noiseless and R4 will have the noise because the noise instance parameter is
specified for each.
Test Case for Both Thermal and Flicker Noise
The following example uses the .noise analysis syntax to test for both thermal
and flicker noise in a resistor.
v1 1 0 10 ac=1
R1 1 2 Res1 50 $noise=1
R2 2 3 Res2 50 $noise=1
R3 3 4 Res1 50 noise=0
R4 4 0 Res2 50 noise=1
.model Res1 R noise=1 kf=6.0e-28 af=2 lf=1 wf=1 ef=1
+ l=1u dlr=0.01u w=10u dw=0.01u
.model Res2 R noise=0 kf=6.0e-28 af=2 lf=1 wf=1 ef=1
+ l=1u dlr=0.01u w=10u dw=0.01u
.model Res3 R $noise=1
.model Res4 R $noise=1
.options post list
.ac dec 10 10k 100k
.noise v(2,3) v1 10
.print noise inoise onoise
.op
.end

In the .list file below, the output shows rs is thermal noise, 1/f is flicker noise:
**** resistor squared noise voltages (sq v/hz)
element 0:r1 0:r2 0:r3 0:r4
rs 5.145e-20 0. 0. 5.145e-20
1/f 5.924e-20 0. 0. 5.924e-20
total 1.107e-19 0. 0. 1.107e-19
rx 12.5000 37.5000 12.5000 12.5000

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LEVEL2 CMC R2 Resistor Model

LEVEL2 CMC R2 Resistor Model

R2_CMC is a nonlinear 2-terminal resistor model. The model does not include
parasitic capacitances. Optionally, the model can include self-heating.
R2_CMC is well behaved and does not have the numerical problems that can
arise in polynomial models. Although empirical, the form of the nonlinearity can
model data reasonably well, especially for velocity saturation effects which are
important in short resistors.
The CMC_R2 model is implemented as LEVEL=2 in the RESISTOR models.
LEVEL=2 Element Syntax
Rxxx n1 n2 mname [M=val] instanceParameters
.MODEL mname r LEVEL = 2 [keyword = val] ...

Figure 2 R2_CMC Model Equivalent Network (thermal sub-network is optional)

LEVEL 2 Model Parameters

Table 2 and Table 3 on page 21 describe instance and model parameters,
respectively.

Table 2 Instance Parameters

Name Default Min. Max. Units Description

m 1 0 ∞ Multiplicity factor (number in parallel)

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Table 2 Instance Parameters (Continued)

Name Default Min. Max. Units Description

w 1.0e-6 0.0 ∞ m Design width of resistor body

l 1.0e-6 0.0 ∞ m Design length of resistor body

r 100.0 0.0 ∞ Ω Resistance (per segment, total resistance is r/m)

c1 1 0 1 Contact at terminal 1: 0=no 1=yes

c2 1 0 1 Contact at terminal 2: 0=no 1=yes

trise 0.0 °C Local temperature delta to ambient (before self-heating)

isnoisy 1 0 1 Switch for noise: 0=no 1=yes

sw_et 1 0 1 Switch for turning off self-heating: 0=exclude 1=include

Table 3 Model Parameters

Name Default Min. Max. Units Description

level 2 Model level

version Model version

revision Model revision (sub-version)

scale 1.0 0.0 1.0 Scale factor for instance geometries

shrink 0.0 0.0 100.0 % Shrink percentage for instance geometries

tmin -100.0 -250.0 27.0 °C Minimum ambient temperature

tmax 500.0 27.0 1000.0 °C Maximum ambient temperature

rthresh 1.0e-3 0.0 ∞ Ω Threshold to switch to resistance form

gmin 1.0e-12 0.0 ∞

tnom 27.0 -250 1000.0 °C Nominal (reference) temperature

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Table 3 Model Parameters

Name Default Min. Max. Units Description

rsh 100.0 0.0 ∞ Ω⁄ Sheet resistance

lmin 0.0 0.0 ∞ μm Minimum allowed drawn length

lmax 9.9e99 0.0 ∞ μm Maximum allowed drawn length

wmin 0.0 0.0 ∞ μm Minimum allowed drawn width

wmax 9.9e99 0.0 ∞ μm Maximum allowed drawn width

xw 0.0 μm Width offset (total)

xl 0.0 μm Length offset (total)

dxle 0.0 μm Length delta for field calculation

sw_efgeo 0 0 1 Switch for electric field geometry calculation:

0=design 1=effective

q3 0.0 0.0 ∞ μm ⁄ V 1/field at which the linear field coefficient

activates

p3 0.0 0.0 1.0 Linear field coefficient factor: E c2 = p2*p3 ⁄ q3

q2 0.0 0.0 ∞ μm ⁄ V 1/field at which the quadratic field coefficient

activates

p2 0.0 0.0 1.0-p3 Quadratic field coefficient factor: Ec2 = p2*p3 ⁄ q3

kfn 0.0 0.0 ∞ Flicker noise coefficient (unit depends on afn)

afn 2.0 0.0 ∞ Flicker noise current exponent

bfn 1.0 0.0 ∞ Flicker noise 1/f exponent

sw_fngeo 0 Switch for flicker noise geometry calculation:

0=design 1=effective

jmax 100.0 0.0 A ⁄ μm Maximum current density

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Table 3 Model Parameters

Name Default Min. Max. Units Description

tminclip -100.0 -250.0 27.0 °C Clip minimum temperature

tmaxclip 500.0 27.0 1000.0 °C Clip maximum temperature

tc1 0.0 /K Resistance linear TC

tc2 0.0 /K2 Resistance quadratic TC

tc1l 0.0 μm ⁄ K Resistance linear TC length coefficient

tc2l 0.0 μm ⁄ K
2 Resistance quadratic TC length coefficient

tc1w 0.0 μm ⁄ K Resistance linear TC width coefficient

tc2w 0.0 μm ⁄ K
2 Resistance quadratic TC width coefficient

tc1kfn 0.0 Flicker noise coefficient linear TC

gth0 1.0e+6 0.0 ∞ W⁄ K Thermal capacitance fixed component

gthp 0.0 0.0 ∞ W ⁄ Kμm Thermal capacitance perimeter component

gtha 0.0 0.0 ∞ W ⁄ Kμm

2 Thermal capacitance area component

cth0 0.0 0.0 ∞ sW ⁄ K Thermal capacitance fixed component

cthp 0.0 0.0 ∞ ( sW ) ⁄ Kμm Thermal capacitance perimeter component

ctha 0.0 0.0 ∞ ( sW ) ⁄ Kμm

2 Thermal capacitance area component

Usage
With Model Card:
rinstanceName (node1 node2) modelName instanceParameters
.model modelName r2_cmc modelParameters

Without Model Card:

r<name> (<node1> <node2>) r=<resistanceValue> [tc1=<tc1Value>]
[tc2=<tc2Value>]

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LEVEL 5 CMC R3 Resistor Model

Example
r137 (n1 n2) rnpoly1 w=1u l=10u
.model rnpoly1 r2_cmc
+ rsh=100.0 xl=0.2u xw=-0.05u
+ p3=0.12 q3=1.63 p2=0.014 q2=3.79
r138 (n2 n3) r=110.0 tc1=1.0e-3

LEVEL 5 CMC R3 Resistor Model

R3_CMC model is a nonlinear 3-terminal resistor model that includes self-
heating, velocity saturation, statistical variations, and parasitic capacitance and
currents. The core depletion pinching model formulations is for p-n junctions of
diffused resistors, but is also applicable for MOS behavior of polysilicon
resistors. Since p-n junction pinching controls JFET device behavior, the
R3_CMC model is also applicable to JFETs.
The CMC_R3 model is implemented as LEVEL=5 in the RESISTOR models.
LEVEL=5 Element Syntax
Rxxx n1 nc n2 mname [M=val] instanceParameters
.MODEL mname r LEVEL=5 [keyword = val] …

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Re1 Re2
n1 i1 i2 n2

i2n

Ip1 Cp1 Cp2 Ip2

dt

nc

R TH CTH

ITH=VI

Figure 3 R3_CMC Model Equivalent Network (thermal sub-network is optional)

Level 5 Instance and Model Parameters

Table 4 on page 25, Table 5 on page 26, and Table 6 on page 27 describe
instance, special model parameters, and model parameters respectively.

Table 4 CMC R3 Instance Parameters

Name Default Min. Max. Units Description

m 1 0 ∞ Multiplicity factor (number in parallel)

w 1.0e-6 0.0 ∞ m Design width of resistor body

l 1.0e-6 0.0 ∞ m Design length of resistor body

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Table 4 CMC R3 Instance Parameters (Continued)

Name Default Min. Max. Units Description

wd 0.0 0.0 ∞ m Dogbone width (total; not per side)

a1 0.0 0.0 ∞ m2 Area of node n1 partition

p1 0.0 0.0 ∞ m Perimeter of node n1 partition

c1 0 0 ∞ # contacts at n1 terminal

a2 0.0 0.0 ∞ m2 Area of node n2 partition

p2 0.0 0.0 ∞ m Perimeter of node n2 partition

c2 0 0 ∞ # contacts at n2 terminal

trise 0.0 °C Local temperature delta to ambient (before self-heating)

swnoise 1 0 1 Switch for noise: 0=no 1=yes

sw_et 1 0 1 Switch for turning off self-heating: 0=exclude 1=include

sw_mman 0 0 1 Switch for mismatch analysis: 0=no and 1=yes

nsmm_rsh 0.0 Number of standard deviations of local variation for rsh

nsmm_w 0.0 Number of standard deviations of local variation for w

nsmm_l 0.0 Number of standard deviations of local variation for l

Table 5 CMC R3 Special Model Parameters

Name Default Min. Max. Units Description

version Model version (major model change)

subversion Model subversion (minor model change)

revision Model revision (implementation update)

level 5 Model level

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LEVEL 5 CMC R3 Resistor Model

Table 5 CMC R3 Special Model Parameters

Name Default Min. Max. Units Description

type -1 -1 +1 Resistor type: -1=n-body and +1=p-body

scale 1.0 0.0 1.0 Scale factor for instance geometries

shrink 0.0 0.0 100.0 % Shrink percentage for instance geometries

tmin -100.0 -250.0 27.0 °C Minimum ambient temperature

tmax 500.0 27.0 1000.0 °C Maximum ambient temperature

rthresh 0.001 0.0 ∞ Ω Threshold to switch end resistance to V=I*R form

gmin 1.0e-12 0.0 ∞ S Minimum conductance (for parasitic branches)

imax 1.0 0.0 ∞ Current at which to linearize diode currents

lmin 0.0 0.0 ∞ μm Minimum allowed drawn length

lmax 9.9e99 lmin ∞ μm Maximum allowed drawn length

wmin 0.0 0.0 ∞ μm Minimum allowed drawn length

wmax 9.9e99 wmin ∞ μm Maximum allowed drawn length

jmax 100.0 0.0 A ⁄ μm Maximum current density

vmax 9.9e99 0.0 ∞ V Maximum voltage w.r.t. control node nc

tminclip -100.0 -250.0 27.0 °C Clip minimum temperature

tmaxclip 500.0 27.0 1000.0 °C Clip maximum temperature

Table 6 CMC R3 Special Model Parameters

Name Default Min. Max. Units Description

tnom 27.0 -250 1000.0 °C Nominal (reference) temperature

rsh 100.0 0.0 ∞ Ω⁄ Sheet resistance

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LEVEL 5 CMC R3 Resistor Model

Table 6 CMC R3 Special Model Parameters

Name Default Min. Max. Units Description

xw 0.0 μm Width offset (total)

nwxw 0.0 2 Narrow width offset correction coefficient

μm

wexw 0.0 μm Webbing effect width offset correction coefficient

(for dog-boned devices)

fdrw 1.0 0.0 ∞ μm Finite doping width offset reference width

fdxwinf 0.0 μm Finite doping width offset width value for wide
devices

xl 0.0 μm Length offset (total)

xlw 0.0 Width dependence of length offset

dxlsat 0.0 μm Additional length offset for velocity saturation

calculation

nst 1.0 0.1 5.0 Subthreshold slope parameter

ats ∞ Saturation smoothing parameter

dfinf 0.01 0.0001 10,0 Depletion factor for wide/long device

⁄ V

dfw 0.0 Depletion factor 1/w coefficient

μm ⁄ V

dfl 0.0 Depletion factor 1/l coefficient

μm ⁄ V

dfwl 0.0 2 Depletion factor 1/(w*l) coefficient

μm ⁄ V

sw_dfgeo 1 0 1 Switch for depletion factor geometry

dependence: 0=drawn and 1=effective

dp 2.0 0.1 1000.0 V Depletion potential

ecrit 4.0 0.02 1000.0 V/ μm Velocity saturation critical field

ecorn 0.4 0.01 ecrit V/ μm Velocity saturation corner field

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LEVEL 5 CMC R3 Resistor Model

Table 6 CMC R3 Special Model Parameters

Name Default Min. Max. Units Description

du 0.02 0.0 1000.0 Mobility reduction at ecorn

rc 0.0 0.0 ∞ Ω Resistance per contact

rcw 0.0 0.0 ∞ Ωμm Width adjustment for contact resistance

fc 0.9 0.0 0.99 Depletion capacitance linearization factor

isa 0.0 0.0 ∞ A ⁄ μm

2 Diode saturation current per unit area

na 1.0 0.0 ∞ Ideality factor for isa

ca 0.0 0.0 ∞ F ⁄ μm
2 Fixed capacitance per unit area

cja 0.0 0.0 ∞ F ⁄ μm

2 Depletion capacitance per unit area

pa 0.75 0.0 ∞ V Built-in potential for cja

ma 0.33 0.0 1.0 Grading coefficient for cja

aja -0.5 ∞ V Smoothing parameter for cja

isp 0.0 0.0 ∞ A ⁄ μm Diode saturation current per unit perimeter

np 1.0 0.0 ∞ Ideality factor for isp

cp 0.0 0.0 ∞ F ⁄ μm Fixed capacitance per unit perimeter

cjp 0.0 0.0 ∞ F ⁄ μm Depletion capacitance per unit perimeter

pp 0.75 0.0 ∞ V Built-in potential for cjp

mp 0.33 0.0 1.0 Grading coefficient for cjp

ajp -0.5 V Smoothing parameter for cjp

vbv 0.0 0.0 ∞ V Breakdown voltage

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LEVEL 5 CMC R3 Resistor Model

Table 6 CMC R3 Special Model Parameters

Name Default Min. Max. Units Description

ibv 1.0e-6 0.0 ∞ A Current at breakdown

nbv 1.0 0.0 ∞ Ideality factor for breakdown current

kfn 0.0 0.0 ∞ Flicker noise coefficient (unit depends on afn)

afn 2.0 0.0 ∞ Flicker noise current exponent

bfn 1.0 0.0 ∞ Flicker noise 1/f exponent

sw_fngeo 0 0 1 Switch for flicker noise geometry calculation:

0=design 1=effective

ea 1.12 V Activation voltage for diode temperature

dependence

xis 3.0 Exponent for diode temperature dependence

tc1 0.0 /K Resistance linear TC

tc2 0.0 /K2 Resistance quadratic TC

tc1l 0.0 μm ⁄ K Resistance linear TC length coefficient

tc2l 0.0 μm ⁄ K
2 Resistance quadratic TC length coefficient

tc1w 0.0 μm ⁄ K Resistance linear TC width coefficient

tc2w 0.0 μm ⁄ K
2 Resistance quadratic TC width coefficient

tc1rc 0.0 μm ⁄ K Contact resistance linear TC

tc2rc 0.0 μm ⁄ K
2 Contact resistance quadratic TC

tc1kfn 0.0 ⁄K Flicker noise coefficient linear TC

tc1vbv 0.0 ⁄K Breakdown voltage linear

tc2vbv 0.0 ⁄K
2 Breakdown voltage quadratic TC

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Table 6 CMC R3 Special Model Parameters

Name Default Min. Max. Units Description

tc1nbv 0.0 ⁄K Breakdown ideality factor linear TC

gth0 1.0e+6 0.0 ∞ W⁄ K Thermal capacitance fixed component

gthp 0.0 0.0 ∞ W ⁄ Kμm Thermal capacitance perimeter component

gtha 0.0 0.0 ∞ W ⁄ Kμm

2 Thermal capacitance area component

cth0 0.0 0.0 ∞ sW ⁄ K Thermal capacitance fixed component

cthp 0.0 0.0 ∞ ( sW ) ⁄ Kμm Thermal capacitance perimeter component

ctha 0.0 0.0 ∞ ( sW ) ⁄ Kμm

2 Thermal capacitance area component

cthc 0.0 0.0 ( sW ) ⁄ Kμm Thermal capacitance contact component

nsig_rsh 0.0 Number of standard deviations of global

variation for rsh

nsig_w 0.0 Number of standard deviations of global

variation for w

nsig_l 0.0 Number of standard deviations of global

variation for l

sig_rsh 0.0 0.0 ∞ % Local variation standard deviation for rsh

(relative)

sig_w 0.0 0.0 ∞ μm Local variation standard deviation for w

(absolute)

sig_l 0.0 0.0 ∞ μm Global variation standard deviation for l

(absolute)

smm_rsh 0.0 0.0 ∞ % μm local variation standard deviation for rsh

(relative)

smm_w 0.0 0.0 ∞ μm

1.5 Local variation standard deviation for rsh
(relative)

smm_l 0.0 0.0 ∞ μm

1.5 Local variation standard deviation for l (absolute)

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 Chapter 2: Passive Device Models
Capacitor Device Model and Equations

Table 6 CMC R3 Special Model Parameters

Name Default Min. Max. Units Description

sw_mmgeo 0 0 1 Switch for flicker noise geometry calculation:

0=drawnand 1=effective

CMC R3 Usage
With Model card:
rinstanceName ([node1 node2 node3) [mname]
instanceParameters
.MODEL modelName r modelParameters
Without Model card
rname (node1 node2) r=resistanceValue [tc1=tc1Value]
[tc2=tc2Value]
Example
r137 n1 n2 n3 rnpoly1 w=1u l=10u
.model rnpoly1 r
+ level=5 rsh=100.0
r138 n2 n3 r=110.0 tc1=1.0e-3

Capacitor Device Model and Equations

This section describes capacitor models and their equations.

Capacitance Model
You can use the .MODEL statement to include a capacitance model in your
HSPICE netlist. For a general description of the .MODEL statement, see
.MODEL in the HSPICE Reference Manual: Commands and Control Options.
Syntax
.MODEL mname C parameter=value

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Parameter Description

mname Model name

C Specifies a capacitance model

parameter Any model parameter name

Table 7 Capacitance Parameters

Name (Alias) Units Default Description

CAP F 0 Default capacitance value.

CAPSW F/m 0 Sidewall fringing capacitance.

COX F/m2 0 Bottomwall capacitance.

DEL m 0 Difference between the drawn width and

the actual width or length.
DELeff = DEL ⋅ SCALM

DI 0 Relative dielectric constant.

L m 0 Default length of the capacitor.

Lscaled = L ⋅ SHRINK ⋅ SCALM

SHRINK 1 Shrink factor.

TC1 1/deg 0 First temperature coefficient for

capacitance.

TC2 1/deg2 0 Second temperature coefficient for

capacitance.

VC1 1/volt 0 First-order voltage-bias coefficient for

capacitance.

VC2 1/volt2 0 Second-order voltage-bias coefficient

for capacitance.

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Capacitor Device Model and Equations

Table 7 Capacitance Parameters (Continued)

Name (Alias) Units Default Description

THICK m 0 Insulator thickness.

TREF deg C TNOM Reference temperature.

W m 0 Default width of the capacitor.

Wscaled = W ⋅ SHRINK ⋅ SCALM

Parameter Limit Checking

If a capacitive element value exceeds 0.1 F, then the output listing file receives
a warning message. This feature helps you to identify elements that are
missing units or have incorrect values, particularly if the elements are in
automatically-produced netlists.

Capacitor Device Equations

Capacitor equations include effective capacitance and capacitance
temperature.

Effective Capacitance Calculation

You can associate a model with a capacitor. You can specify some of the
parameters in both the element and the model descriptions. The element
values override the model values.
■
To scale the element width and length, use .OPTION SCALE and the
SHRINK model parameter.
■
To scale the model width and length, use .OPTION SCALM and the SHRINK
model parameter.
The following equations calculate the effective width and length:
Weff = Wscaled – 2 ⇒DELeff
Leff = Lscaled – 2 ⇒DELeff
If you specify the element capacitance:
CAPeff = C ⋅ SCALE ( element ) ⋅ M

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Capacitor Device Model and Equations

Otherwise, the equation calculates the capacitance from the Leff, Weff, and
COX values:
CAPeff = M ⋅ SCALE ( element ) ⋅
[ Leff ⋅ Weff ⋅ COX + 2 ⋅ ( Leff + Weff ) ⋅ CAPSW ]
If you do not specify COX, but THICK is not zero, then:
DI ⋅ ε o
COX = -------------------- if DI not zero
THICK
ε ox
COX = ------------------- if DI=0
THICK
The following values apply to the preceding equation:
ε o = 8.8542149e-12
F
---------------
meter
ε ox = 3.453148e-11
F -
--------------
meter
If you specify only the model capacitance (CAP), then:
CAPeff = CAP ⋅ SCALE ( element ) ⋅ M

Capacitance Voltage Equation

The following equation calculates the capacitance as a function of voltage
across a given capacitor:
2
C ( v ) = C ⋅ ( 1 + V ⋅ VC1 + V ⋅ VC2 )

Capacitance Temperature Equation

The following equation calculates the capacitance as a function of temperature:
C ( t ) = C ⋅ ( 1.0 + TC1 ⋅ Δt + TC2 ⋅ Δt 2 )

Parameter Description

Δt t - tnom

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Chapter 2: Passive Device Models
Inductor Device Model and Equations

Parameter Description

t Element temperature in degrees Kelvin.

t=circuit_temp + DTEMP + 273.15

tnom Nominal temperature in degrees Kelvin.

tnom+273.15 + TNOM

Inductor Device Model and Equations

You can use several elements and models to analyze:
■
Switching regulators
■
Transformers
■
Mutual inductive circuits
These elements include:
■
Magnetic winding elements
■
Mutual cores
■
Magnetic core models
You can use the saturable core model for:
■
Chokes
■
Saturable transformers
■ Linear transformers
To use the model, you must:
1. Provide a mutual core statement.
2. Use a .MODEL statement to specify the core parameters.
3. Use a magnetic winding element statement to specify the windings around
each core element.

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Inductor Device Model and Equations

Inductor Core Models

Syntax
Magnetic Core
.MODEL mname L (<pname1 = val1>…)
Jiles-Atherton Ferromagnetic Core
.MODEL mname CORE (LEVEL=1 <pname1 = val1>…)
LEVEL=3 Resistor Model
.MODEL mname L LEVEL=3 <SCALE=val> <TNOM=val>
Example 1
.MODEL CHOKE L(BS=12K BR=10K HS=1 HCR=.2 HC=.3 AC=1. LC=3.)

To use this example, obtain the core model parameters from the manufacturer’s
data. Figure 4 on page 38 illustrates the required b-h loop parameters for the
model.
The model includes:
■
Core area
■
Length
■
Gap size
■
Core growth time constant
Example 2
This example is located in the following directory:
$installdir/demo/hspice/mag/bhloop.sp

Table 8 Magnetic Core Model Parameters

Name (Alias) Units Default Description

AC cm ⋅ 2 1.0 Core area.

BS Gauss 13000 Magnetic flux density, at saturation.

BR Gauss 12000 Residual magnetization.

HC Oersted 0.8 Coercive magnetizing force.

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Inductor Device Model and Equations

Table 8 Magnetic Core Model Parameters (Continued)

Name (Alias) Units Default Description

HCR Oersted 0.6 Critical magnetizing force.

HS Oersted 1.5 Magnetizing force, at saturation.

LC cm 3.0 Core length.

LG cm 0.0 Gap length.

TC s 0.0 Core growth time constant.

Figure 4 Magnetic Saturable Core Model

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Inductor Device Model and Equations

Table 9 Jiles-Atherton Core Model Parameters

Name (Alias) Units Default Description

LEVEL 2 Model selector.

■
For the Jiles-Atherton model, LEVEL=1.
■
LEVEL=2 (default) selects the Pheno
model, which is the original model.

AREA, (AC) cm2 1 Mean of the cross section for the magnetic
core. AC is an alias of AREA.

PATH, (LC) cm 3 Mean of the path length for the magnetic

core. LC is an alias of PATH.

MS amp/meter 1e6 Magnetization saturation.

A amp/meter 1e3 Characterizes the shape of anhysteretic

magnetization.

ALPHA 1e-3 Coupling between the magnetic domains.

C 0.2 Domain flexing parameter.

K amp/meter 500 Domain of an isotropy parameter.

Table 10 Magnetic Core Element Outputs

Output Variable Description

LX1 Magnetic field, h (oersted)

LX2 Magnetic flux density, b (gauss)

LX3 Slope of the magnetization curve,

dm
dh

LX4 Bulk magnetization, m (amp/meter)

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Inductor Device Model and Equations

Table 10 Magnetic Core Element Outputs

Output Variable Description

LX5
dm an
Slope of the anhysteretic magnetization curve,
dh

LX6 Anhysteretic magnetization, man (amp/meter)

LX7 Effective magnetic field, he (amp/meter)

Inductor Device Equations

This section contains equations for inductors.

Checking Parameter Limits

If an inductive element value exceeds 0.1 Henry, the output listing file receives
a warning message. This feature helps you identify elements that are missing
units or that have incorrect values, particularly if the elements are in
automatically-produced netlists.

Inductor Temperature Equation

The following equation provides the effective inductance as a function of
temperature:
2
L ( t ) = L ⋅ ( 1.0 + TC1 ⋅ Δt + TC2 ⋅ Δt )

Parameter Description

Δt t - tnom

t Element temperature in degrees Kelvin.

t=circuit_temp + DTEMP + 273.15

tnom Nominal temperature in degrees Kelvin.

tnom=273.15 + TNOM

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 Chapter 2: Passive Device Models
Inductor Device Model and Equations

To create coupling between inductors, use a separate coupling element.

To specify mutual inductance between two inductors, use the coefficient of
coupling, kvalue. The following equation defines kvalue:
M
K = ------------------------------
( L1 ⋅ L2 )1 / 2

Parameter Description

L1, L2 Inductances of the two coupled inductors.

M Mutual inductance, between the inductors.

The linear branch relation for transient analysis, is:

di 1 di 2
v 1 = L 1 ⋅ ------- + M ⋅ -------
dt dt
di 1 di 2
v 2 = M ⋅ ------- + L 2 ⋅ -------
dt dt
The linear branch relation for AC analysis, is:
V1 = ( j ⋅ ω ⋅ L1 ) ⋅ I1 + ( j ⋅ ω ⋅ M ) ⋅ I2

V2 = ( j ⋅ ω ⋅ M ) ⋅ I1 + ( j ⋅ ω ⋅ L2 ) ⋅ I2

Note: If you do not use a mutual inductor statement to define an

inductor reference, then an error message appears, and
simulation terminates.

Jiles-Atherton Ferromagnetic Core Model

The Jiles-Atherton ferromagnetic core model is based on domain wall motion,
including both bending and translation. A modified Langevin expression
describes the hysteresis-free (anhysteretic) magnetization curve. This leads to:

· he
m an = MS ⋅ ⎛⎝ coth ⎛ -----⎞ – -----⎞⎠
A
⎝ A ⎠ he

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Inductor Device Model and Equations

h e = h + ALPHA ⋅ m an

Parameter Description

m an Magnetization level, if the domain walls could move freely.

he Effective magnetic field.

h Magnetic field.

MS This model parameter represents the saturation magnetization.

A This model parameter characterizes the shape of anhysteretic

magnetization.

ALPHA This model parameter represents the coupling between the magnetic
domains.

The preceding equation generates anhysteretic curves, if the ALPHA model

parameter has a small value. Otherwise, the equation generates some
elementary forms of hysteresis loops, which is not a desirable result.
The following equation calculates the slope of the curve, at zero (0):

dm an 1
= --------------------------------------------
dh A
3 ⋅ -------- – ALPHA
MS
The slope must be positive; therefore, the denominator of the above equation
must be positive. If the slope becomes negative, an error message appears.
Anhysteretic magnetization represents the global energy state of the material, if
the domain walls could move freely, but the walls are displaced and bent in the
material.
If you express the bulk magnetization (m) as the sum of an irreversible
component (due to wall displacement), and a reversible component (due to
domain wall bending), then:

( m an – m ) dm an dm⎞
= ------------------------ + C ⋅ ⎛⎝
dm
– ⎠
dh K dh dh
-or-

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Inductor Device Model and Equations

dm ( m an – m ) C dm an
= ----------------------------- + ------------- ⋅
dh (1 + C) ⋅ K 1 + C dh
Solving the above differential equation obtains the bulk magnetization value, m.
The following equation uses m to compute the flux density (b):
b = μ0 ⋅ ( h + m )
The following values apply to the preceding equation:
■
μ0 The permeability of free space, is 4π ⋅ 10 –7
■
The units of h and m are in amp/meter.
■
The units of b are in Tesla (Wb/meter2).
Example
This example demonstrates the effects of varying the ALPHA, A, and K model
parameters, on the b-h curve.
■
Figure 5 on page 44 shows b-h curves for three values of ALPHA.
■
Figure 6 on page 44 shows b-h curves for three values of A.
■
Figure 7 on page 45 shows b-h curves for three values of K.
Input File
This input file is located in the following directory:
$installdir/demo/hspice/mag/jiles.sp

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Inductor Device Model and Equations

Figure 5 Anhysteretic b-h Curve Variation: Slope and ALPHA Increase

Figure 6 Anhysteretic b-h Curve Variation: Slope Decreases, A Increases

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Inductor Device Model and Equations

Discontinuities in Inductance Due to Hysteresis

This example creates multi-loop hysteresis b-h curves for a magnetic core.
Discontinuities in the inductance, which are proportional to the slope of the b-h
curve, can cause convergence problems. Figure 7 and Figure 8 on page 46
demonstrates the effects of hysteresis on the inductance of the core.
This input file is located in the following directory:
$installdir/demo/hspice/mag/tj2b.sp

Figure 7 Inductance Curve

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Chapter 2: Passive Device Models
Inductor Device Model and Equations

Figure 8 Hysteresis Curve

Optimizing the Extraction of Parameters

This example demonstrates how to optimize the process of extracting
parameters from the Jiles-Atherton model. Figure 9 shows the plots of the core
output, before and after optimization.
Input File
This input file is located in the following directory:
$installdir/demo/hspice/mag/tj_opt.spThe tj_opt.sp file also contains the
analysis results listing.

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Inductor Device Model and Equations

Figure 9 Output Curves, Before Optimization (top), and After Optimization (bottom)

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 3
Diodes
3

Describes model parameters and scaling effects for geometric and

nongeometric junction diodes.

HSPICE ships hundreds of examples for your use; see Listing of

Demonstration Input Files for paths to demo files.
You use diode models to describe pn junction diodes within MOS and bipolar
integrated circuit environments and discrete devices. You can use four types of
models (as well as a wide range of parameters) to model standard junction
diodes:
■
Zener diodes
■
Silicon diffused junction diodes
■ Schottky barrier diodes
■
Nonvolatile memory diodes (tunneling current)
Note: See the MOSFET Diode Models in the HSPICE Reference
Manual: MOSFET Models for other MOSFET and standard
discrete diodes.

Diode model types include the junction diode model, and the Fowler-Nordheim
model. Junction diode models have two variations: geometric and
nongeometric.

Diode Types
Use the geometric junction diode to model:

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Chapter 3: Diodes
Diode Types

■
IC-based, standard silicon-diffused diodes
■
Schottky barrier diodes
■
Zener diodes.
Use the geometric parameter to specify dimensions for pn junction poly and
metal capacitance for a particular IC process technology.
Use the non-geometric junction diode to model discrete diode devices, such as
standard and Zener diodes. You can use the non-geometric model to scale
currents, resistances, and capacitances by using dimensionless area
parameters.
The Fowler-Nordheim diode defines a tunneling current-flow, through
insulators. The model simulates diode effects in nonvolatile EEPROM memory.

Using Diode Model Statements

Use model and element statements to select the diode models. Use the LEVEL
parameter (in model statements) to select the type of diode model:
■
LEVEL=1 selects the non-geometric, junction diode model
■
LEVEL=2 selects the Fowler-Nordheim diode model
■
LEVEL=3 selects the geometric, junction diode model.
To design Zener, Schottky barrier, and silicon diffused diodes, alter the model
parameters for both LEVEL=1 and LEVEL=3. LEVEL=2 does not permit
modeling of these effects. For Zener diodes, set the BV parameter for an
appropriate Zener breakdown voltage.
If you do not specify the LEVEL parameter in the .MODEL statement, the model
defaults to the non-geometric, junction diode model, LEVEL=1.
Use control options with the diode model, to:
■ Scale model units
■
Select diffusion capacitance equations
■
Change model parameters.

Setting Control Options

To set control options, use the .OPTION statement.

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Diode Types

Control options, related to the analysis of diode circuits and other models,
include:
■ DCAP
■
DCCAP
■
GMIN
■
GMINDC
■
SCALE
■
SCALM

Bypassing Latent Devices (HSPICE only)

Use .OPTION BYPASS (latency) to decrease simulation time in large designs.
To speed simulation time, this option does not recalculate currents,
capacitances, and conductances, if the voltages at the terminal device nodes
have not changed. .OPTION BYPASS applies to MOSFETs, MESFETs,
JFETs, BJTs, and diodes. Use .OPTION BYPASS to set BYPASS.
BYPASS might reduce simulation accuracy for tightly-coupled circuits such as
op-amps, high gain ring oscillators, and so on. Use .OPTION MBYPASS
MBYPASS to set MBYPASS to a smaller value for more accurate results.

Setting Scaling Options

■
Use the SCALE element option to scale LEVEL=2 and LEVEL=3 diode
element parameters.
■
Use the SCALM (scale model) option to scale LEVEL=2 and LEVEL=3 diode
model parameters.
LEVEL=1 does not use SCALE or SCALM.
Include SCALM=<val> in the .MODEL statement (in a diode model) to override
global scaling that uses the .OPTION SCALM=<val> statement.

Using the Capacitor Equation Selector Option — DCAP

■
Use the DCAP option to select the equations used in calculating the
depletion capacitance (LEVEL=1 and LEVEL=3).
■
Use the DCCAP option to calculate capacitances in DC analysis.

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Specifying Junction Diode Models

Include DCAP=<val> in the .MODEL statement for the diode to override the
global depletion capacitance equation that the .OPTION DCAP=<val>
statement selects.

Using Control Options for Convergence

Diode convergence problems often occur at the breakdown voltage region
when the diode is either overdriven or in the OFF condition.
To achieve convergence in such cases, do either of the following:
■
Include a non-zero value in the model for the RS (series resistor) parameter.
■
Increase GMIN (the parallel conductance that HSPICE automatically places
in the circuit). You can specify GMIN and GMINDC in the .OPTION
statement.
Table 11 shows the diode control options:
Table 11 Diode Control Options

Function Control Options

Capacitance DCAP, DCCAP

Conductance GMIN, GMINDC

Geometry SCALM, SCALE

Specifying Junction Diode Models

Use the diode element statement to specify the two types of junction diodes:
geometric or non-geometric. Use a different element type format for the Fowler-
Nordheim model.
Use the parameter fields in the diode element statement to define the following
parameters of the diode model, specified in the .MODEL statement for the
diode:
■ Connecting nodes
■ Initialization
■
Temperature

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■
Geometric junction
■
Capacitance parameters
Both LEVEL=1 and LEVEL=3 junction diode models share the same element
parameter set. Poly and metal capacitor parameters of LM, LP, WM and WP, do
not share the same element parameter.
Element parameters have precedence over model parameters, if you repeat
them as model parameters in the .MODEL statement.
Parameters common to both element and model statements are:
AREA, PJ, M, LM, LP, WM, WP, W, and L.
Table 12 Junction Diode Element Parameters

Function Parameters

Netlist Dxxx, n+, n-, mname

Initialization IC, OFF

Temperature DTEMP

Geometric junction AREA, L, M, PJ, W

Geometric capacitance (LEVEL=3 only) LM, LP, WM, WP

Using the Junction Model Statement

You can use the .MODEL statement to include a junction model in your HSPICE
netlist. For a general description of the .MODEL statement, see the HSPICE
and HSPICE RF Command Reference.
Syntax
.MODEL mname D <LEVEL = val> <keyword = val> ...

Parameter Description

mname Model name. The diode element uses this name to refer to the
model.

D Symbol that identifies a diode model.

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Parameter Description

LEVEL Symbol that identifies a diode model.

LEVEL=1 =junction diode.

LEVEL=2 =Fowler-Nordheim diode.
LEVEL=3 =geometric processing for junction diode.

keyword Model parameter keyword, such as CJO or IS.

Example
.MODEL D D (CO=2PF, RS=1, IS=1P)
.MODEL DFOWLER D (LEVEL=2, TOX=100, JF=1E-10, EF=1E8)
.MODEL DGEO D (LEVEL=3, JS=1E-4, JSW=1E-8)
.MODEL d1n750a D
+ LEVEL=1 XP =0.0 EG =1.1
+ XOI =0.0 XOM =0.0 XM =0.0
+ WP =0.0 WM =0.0 LP =0.0
+ LM =0.0 AF =1.0 JSW =0.0
+ PB =0.65 PHP =0.8 M =0.2994
+ FC =0.95 FCS =0.4 MJSW=0.5
+ TT =2.446e-9 BV =4.65 RS =19
+ IS =1.485e-11 CJO =1.09e-9 CJP =0.0
+ PJ =0.0 N =1.615 IK =0.0
+ IKR =1.100e-2 IBV =2.00e-2

Using Junction Model Parameters

The diode element statement references the .MODEL statement. The .MODEL
statement contains parameters that specify:
■
Type of diode model (LEVEL=1, 2, or 3)
■ DC
■
Capacitance
■
Temperature
■ Resistance
■
Geometry
■
Noise

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Table 13 Junction Diode Model Parameters (LEVEL=1 and 3)

Function Parameters

model type LEVEL

DC parameters IBV, IK, IKR, IS, ISW, N, RS, VB, RS

geometric junction AREA, M, PJ

geometric capacitance L, LM, LP, SHRINK, W, WM, WP, XM, XOJ, XOM, XP, XW
(LEVEL=3 only)

capacitance CJ, CJP, FC, FCS, M, MJSW, PB, PHP, TT

noise AK, KF

Table 14 Junction DC Parameters in LEVEL=1 and 3

Name (Alias)
Units Default Description

AREA 1.0 Junction area.

■
For LEVEL=1
AREAeff = AREA⋅ M, unitless
■
For LEVEL=3
AREAeff=AREA⋅ SCALM2 ⋅ SHRINK2 ⋅
■
M unit = meter2
■
If you specify W and L:
AREAeff = Weff ⋅ Leff ⋅ M unit = meter2

EXPLI amp/ 0 Current-explosion model parameter. The PN

AREAeff junction characteristics (above the explosion
current) are linear with the slope at the
explosion point. This speeds up the simulation
and improves convergence.

EXPLIeff = EXPLI⋅ AREAeff

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Table 14 Junction DC Parameters in LEVEL=1 and 3 (Continued)

Name (Alias)
Units Default Description

EXPLIR amp/ EXPLI Reverse mode current explosion model

AREAeff parameter.

EXPLIReff = EXPLIR⋅ AREAeff

IB amp/ 1.0e-3 Current, at breakdown voltage.

AREAeff
For LEVEL=3:
IBVeff = IBV ⋅ AREAeff / SCALM2

IBV amp/ 1.0e-3 Current, at breakdown voltage:

AREAeff
For LEVEL=3:
IBVeff = IBV⋅ AREAeff / SCALM2

IK (IKF, JBF) amp/ 0.0 Forward-knee current (intersection of the high-

AREAeff and low-current asymptotes).

IKeff = IK⋅ AREAeff

IKR (JBR) amp/ 0.0 Reverse-knee current (intersection of the high-

AREAeff and low-current asymptotes).
IKReff = IKR⋅ AREAeff

JSW (ISP) amp/ 0.0 Sidewall saturation current, per unit junction
PJeff periphery.
■
For LEVEL=1:
JSWeff = PJeff⋅ JSW
■ For LEVEL=3:
JSWeff = PJeff⋅ JSW/SCALM

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Table 14 Junction DC Parameters in LEVEL=1 and 3 (Continued)

Name (Alias)
Units Default Description

IS (JS) amp/ LEVEL Saturation current per unit area. If the IS value
AREAeff 1= 1.0e- is less than EPSMIN, the program resets the
14 value of IS to EPSMIN, and shows a warning
message.
LEVEL EPSMIN default=1.0e-28
3= 0.0
If the value of IS is too large, the program
displays a warning.
■ For LEVEL=1:
ISeff = AREAeff⋅ IS
■ For LEVEL=3:
ISeff = AREAeff ⋅ IS/SCALM2

L Default length of the diode.

Leff = L⋅ SHRINK⋅ SCALM + XWeff

LEVEL 1 Diode model selector.

■
LEVEL=1 or LEVEL=3 selects the junction
diode model.
■
LEVEL=2 selects the Fowler-Nordheim
model.

N 1.0 Emission coefficient.

RS ohms 0.0 Ohmic series resistance.

or ■ For LEVEL=1:
ohms/m2 RSeff = RS/AREAeff
(see note ■ For LEVEL=3:
below) RSeff= RS ⋅ SCALM2/AREAeff

PJ 0.0 Junction periphery.

■
For LEVEL=1:
PJeff = PJ⋅ M, unitless
■
For LEVEL=3:
PJeff = PJ⋅ SCALM⋅ M⋅ SHRINK, meter
■
If you specify W and L:
PJeff = (2⋅ Weff + 2⋅ Leff)⋅ M, meter

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Table 14 Junction DC Parameters in LEVEL=1 and 3 (Continued)

Name (Alias)
Units Default Description

SHRINK 1.0 Shrink factor.

VB (BV, VAR, VRB) V 0.0 Reverse breakdown voltage. 0.0 indicates an

infinite breakdown voltage.

NBV N Breakdown emission coefficient (If not

specified, NBV is set to N).

XW Accounts for masking and etching effects.

XWeff = XW⋅ SCALM

JTUN amp/ 0.0 Tunneling saturation current per area.

AREAeff ■
For LEVEL=1:
JTUNeff = AREAeff⋅ JTUN
■
For LEVEL=3:
JTUNeff = AREAeff⋅ JTUN/SCALM2

JTUNSW amp/ 0.0 Sidewall tunneling saturation current per unit

PJeff junction periphery.
■
For LEVEL=1:
JTUNSWeff = PJeff⋅ JTUNSW
■
For LEVEL=3:
JTUNSWeff = PJeff⋅ JTUNSW/SCALM

NTUN 30 Tunneling emission coefficient.

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Note: If you use a diode model than does not specify an AREA, then
AREA defaults to 1, and RS is in units of ohms. If you specify the
AREA in square meters (m2) in the netlist, then the units of RS are
ohms/m2.
Table 15 Junction Capacitance Parameters

Name (Alias) Units Default Description

CJ (CJA, CJO) F/ AREAeff 0.0 Zero-bias junction capacitance, per unit-

junction bottomwall area.
■
For LEVEL=1:
CJOeff = CJO⋅ AREAeff
■ For LEVEL=3:
CJeff = CJ ⋅ AREAeff/SCALM2

CJP (CJSW) F/PJeff 0.0 Zero-bias junction capacitance, per unit-

junction periphery (PJ).
■ For LEVEL=1:
CJPeff = CJP⋅ PJeff
■ For LEVEL=3:
CJPeff = CJP⋅ PJeff/SCALM

FC 0.5 Coefficient for the formula that calculates

the capacitance for the forward-bias
depletion area

FCS 0,5 Coefficient for the formula that calculates

the capacitance for the forward-bias
depletion periphery.

M (EXA, MJ) 0.5 Grading coefficient at area junction.

MJSW (EXP) 0.33 Grading coefficient at periphery junction.

PB (PHI, V 0.8 Contact potential at area junction.

VJ, PHA)

PHP V PB Contact potential at periphery junction.

TT s 0.0 Transit time.

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Table 16 Metal and Poly Capacitor Parameters, LEVEL=3

Name (Alias) Units Default Description

LM m 0.0 Default length of metal. Use this parameter if the

element statement does not specify LM.

LMeff = LM⋅ SCALM⋅

SHRINK

LP m 0.0 Default length of polysilicon. Use this parameter

if the element statement does not specify LP.

LPeff = LP⋅ SCALM⋅ SHRINK

WM m 0.0 Default width of metal. Use this parameter if the

element statement does not specify WM.

WMeff = WM⋅ SCALM⋅ SHRINK

WP m 0.0 Default width of polysilicon. Use this parameter if

the element statement does not specify WP.

WPeff = WP⋅ SCALM⋅ SHRINK

XM m 0.0 Accounts for masking and etching effects in

metal layer: XMeff = XM⋅ SCALM

XOI 10k Thickness of the poly to bulk oxide.

XOM Å 10k Thickness of the metal to bulk oxide.

XP m 0.0 Accounts for masking and etching effects in poly

layer: XPeff = XP⋅ SCALM

Table 17 Noise Parameters for LEVEL=1 and 3

Name (Alias) Units Default Description

AF 1.0 Flicker noise exponent.

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Table 17 Noise Parameters for LEVEL=1 and 3 (Continued)

Name (Alias) Units Default Description

KF 0.0 Flicker noise coefficient.

Geometric Scaling for Diode Models

LEVEL=1 Scaling
LEVEL=1 uses the AREA and M Element parameters to scale the following
element and model parameters: IK, IKR, JS, CJO, and RS.
For AREA and M, default=1.
This element is not geometric, because it uses dimensionless values to
measure both the area (AREA) and the periphery (PJ). The .OPTION SCALE
and .OPTION SCALM statements do not affect these parameters.
Here is the process:
• Diode models multiply the periphery junction parameter by M (the multiplier
parameter) to scale a dimensionless periphery junction:
PJeff = PJ ⋅ M
The diode models then use PJeff to scale CJP (the zero-bias junction
capacitance), and the sidewall saturation current (JSW).
CJPeff = PJeff ⋅ CJP
JSWeff = PJeff ⋅ JSW
JTUNSWeff = PJeff ⋅ JTUNSW
The models use the AREA and M values to obtain AREAeff.
AREAeff = AREA ⋅ M
Models multiply CJO, IK, IKR, IBV, and IS by AREAeff to obtain their
effective scaled values. However, diode models divide RS by AREAeff.

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IKeff = AREAeff ⋅ IK
IKReff = AREAeff ⋅ IKR
ISeff = AREAeff ⋅ IS
RSeff = RS/AREAeff
CJOeff = CJO ⋅ AREAeff
JTUNeff = JTUN ⋅ AREAeff

LEVEL=3 Scaling
The SCALM, SCALE, SHRINK, and M parameters affect LEVEL=3 scaling.
■
SCALE affects the following LEVEL=3 element parameters:
AREA, LM, LP, PJ, WM, WP, W, L
■
SCALM affects the following model parameters:
AREA, IBV, IK, IKR, IS, PJ, JSW, RS, CJO, CJP, LM, LP,
WP, XM, XP, W, L, XW, JTUN, JTUNSW

If you include AREA as either an element parameter or a model parameter, then

the program uses SCALE or SCALM. The following equations use the AREA
element parameter, instead of the AREA model parameter.
If you specified the AREA and PJ model parameters, but not the element, then
use SCALM as the scaling factor, instead of SCALE.
The following equations determine the parameters of the scaled effective area,
and of the periphery junction element:
AREAeff = AREA ⋅ M ⋅ SCALE2 ⋅ SHRINK2
PJeff = PJ ⋅ SCALE ⋅ M ⋅ SHRINK
If you specified W and L:
AREAeff = Weff ⋅ Leff ⋅ M
PJeff = (2 ⋅ Weff + 2 ⋅ Leff) ⋅ M
The following values apply to the preceding equations:
Weff = W ⋅ SCALE ⋅ SHRINK + XWeff
Leff = L ⋅ SCALE ⋅ SHRINK + XWeff
To find the value of JSWeff and CJPeff, use the following formula:
JSWeff = PJeff ⋅ (JSW/SCALM)
CJPeff = PJeff ⋅ (CJP/SCALM)

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JTUNSWeff = PJeff ⋅ JTUNSW/SCALM

To determine the polysilicon and metal capacitor dimensions, multiply each by
SCALE or by SCALM if you used model parameters to specify these dimensions.
LMeff = LM ⋅ SCALE ⋅ SHRINK
WMeff = WM ⋅ SCALE ⋅ SHRINK
LPeff = LP ⋅ SCALE ⋅ SHRINK
WPeff = WP ⋅ SCALE ⋅ SHRINK
XPeff = XP ⋅ SCALM
XMeff = XM ⋅ SCALM
Use the following formulas to determine the effective scaled model parameters
(IBeff, IKeff, IKReff, IBVeff, RSeff, and CJO):
IKeff = AREAeff ⋅ IK
IKReff = AREAeff ⋅ IKR
IBVeff = IBV/SCALM2
ISeff = IS ⋅ (AREAeff/SCALM2)
RSeff = RS/(AREAeff ⋅ SCALM2)
CJOeff = AREAeff ⋅ (CJO/SCALM2)

JTUNeff = AREAeff ⋅ (JTUN/SCALM2)

Note: IBVeff is not scaled with AREAeff

Defining Diode Models

This section describes diode current, and diode-equivalent circuits.

Diode Current
Figure 10 shows the direction of current flow through the diode. Use either
I(D1) or I1(D1) syntax to print the diode current.
If the voltage on node1 is 0.6V greater than the voltage on node2, then the
diode is forward biased or turned on. The anode is the p-doped side of a diode,
and the cathode is the n-doped side.

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I1 (D1) node1 (anode, P-type, + node)

I2 (D2) node2 (cathode, N-type, - node)

Figure 10 Diode Current Convention

Using Diode Equivalent Circuits

Synopsys diode device models provide three equivalent circuits for diode
analysis: transient, AC, and noise circuits. Components of these circuits form
the basis for all element and model equations.
The fundamental component in the DC-equivalent circuit is the DC diode
current (id). Noise and AC analyses do not use the actual id current; instead,
these analyses use the partial derivative of id with respect to the vd terminal
voltage.
The conductance equation for this partial derivative is:
∂id
gd = --------
∂vd
The drain current (id) equation accounts for all basic DC effects of the diodes.
The diode device models assume that capacitance effects are separate from
the id equations.

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Anode

rs

+
vd id cd
-

Cathode
Figure 11 Equivalent Circuit for Diode in Transient Analysis

Anode

rs

gd cd

Cathode

Figure 12 Equivalent Circuit for Diode in AC Analysis

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Anode

rs
Inrs

id cd
Inrd

Cathode

Figure 13 Equivalent Circuit for Diode in AC Noise Analysis

Determining Temperature Effects on Junction Diodes

LEVEL=1 and LEVEL=3 model statements contain parameters that calculate
temperature effects. TLEV and TLEVC select different temperature equation to
calculate temperature effects on:
■
Energy gap
■
Leakage current
■
Breakdown voltage
■
Contact potential
■
Junction capacitance
■ Grading

Table 18 Junction Diode Temperature Parameters (LEVEL=1 and 3)

Variable Parameter

Resistance coefficient TRS

Capacitance coefficient (area) CTA

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Table 18 Junction Diode Temperature Parameters (LEVEL=1 and 3) (Continued)

Variable Parameter

Capacitance coefficient (periphery) CTP

Energy gap (pn junction) EG

Energy gap (bandgap corrections) GAP1, GAP2

Transit time coefficient TTT1, TTT2

Reference temperature TREF

Temperature selectors TLEV, TLEVC

Miscellaneous TM1, TM2, TPB, TPHP

Saturation current temperature XTI

Table 19 Junction Diode Temperature Effects, LEVEL=1 and 3

Name (Alias) Units Default Description

CTA (CTC) 1/× 0.0 Temperature coefficient for area junction

capacitance (CJ). If you set the TLEVC parameter
to 1, CTAl overrides the default temperature
coefficient.

CTP 1/× 0.0 Temperature coefficient for periphery junction

capacitance (CJP). If you set TLEVC to 1, CTP
overrides the default temperature coefficient.

EG eV Energy gap for pn junction diode.

■
For TLEV=0, 1, default=1.11.
■
For TLEV=2, default=1.16
1.17 - silicon
0.69 - Schottky barrier diode
0.67 - germanium
1.52 - gallium arsenide

KEG - 1 EG correction factor for tunneling

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Table 19 Junction Diode Temperature Effects, LEVEL=1 and 3 (Continued)

Name (Alias) Units Default Description

GAP1 eV/× 7.02e-4 First bandgap correction factor. From Sze, alpha
term.

7.02e-4 - silicon (old value)

4.73e-4 - silicon
4.56e-4 - germanium
5.41e-4 - gallium arsenide

GAP2 × 1108 Second bandgap correction factor. From Sze,

beta term.

1108 - silicon (old value)

636 - silicon
210 - germanium
204 - gallium arsenide

PT 3.0 PT is an alias for XTI.

TCV 1/× 0.0 Temperature coefficient of breakdown voltage.

TLEV 0.0 Diode temperature equation selector. Interacts

with TLEVC.

TLEVC 0.0 Level selector for diode temperature, junction

capacitances, and contact potentials. Interacts
with TLEV.

TM1 1/× 0.0 First-order temperature coefficient for MJ.

TM2 1/° 2 0.0 Second-order temperature coefficient for MJ.

TPB (TVJ) V/× 0.0 PB temperature coefficient. If you set the TLEVC
parameter to 1 or 2, TPB overrides default
temperature compensation.

TPHP V/× 0.0 PHP temperature coefficient. If you set the

TLEVC parameter to 1 or 2, TPHP overrides
default temperature compensation.

TREF ×c 25.0 Model reference temperature (LEVEL=1 or 3

only).

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Table 19 Junction Diode Temperature Effects, LEVEL=1 and 3 (Continued)

Name (Alias) Units Default Description

TRS 1/× 0.0 Resistance temperature coefficient.

TTT1 1/× 0.0 First-order temperature coefficient for TT.

TTT2 1/° 2 0.0 Second-order temperature coefficient for TT.

XTI 3.0 Exponent for the saturation-current temperature.

■ Set XTI=3.0 for a silicon-diffused junction.
■
Set XTI=2.0 for a Schottky barrier diode.

PT is an alias for XTI.

XTITUN 3.0 Exponent for the tunneling current temperature.

Using Junction Diode Equations

Table 20 shows the definitions of variables in diode equations.

Table 20 Equation Variable Definitions

Variable Definition

cd total diode capacitance

f frequency

gd diode conductance

id diode DC current

id1 current, without high-level injection

ind equivalent noise current for a diode

inrs equivalent noise current for a series resistor

vd voltage, across the diode

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Table 21 shows the definitions of equation quantities.

Table 21 Equation Quantity Definition

Quantity Definition

tox 3.453143e-11 F/m

k 1.3806226e-23 (Boltzmann’s constant)

q 1.6021918e-19 (electron charge)

t temperature in °Kelvin

Δt t - tnom

tnom nominal temperature of parameter measurements in °Kelvin

vt(t) k ⋅ t/q: thermal voltage

vt(tnom) k ⋅ tnom/q: thermal voltage

Using Junction DC Equations

A basic diode device model contains three regions:
■
Forward bias
■
Reverse bias
■
Breakdown regions
For a forward-bias diode, the anode is more positive than the cathode. The
diode is turned on, and conducts above 0.6 V. Set the RS model parameter to
limit conduction current. As the forward-bias voltage increases past 0.6 V, the
limiting resistor prevents the value of the diode current from becoming too high,
and prevents the solution from converging.

Forward Bias: vd ≥ – 10 ⋅ vt
vd
---------------
id = ISeff ⋅ ⎛⎝ e N ⋅ vt – 1⎞⎠

vd = v node1 – v node2

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In reverse-bias, the anode (node1) is more negative than the cathode. The
diode is turned off and conducts a small leakage current.

Reverse Bias: BVeff < vd < – 10 ⋅ vt

– vd
⎛ ---------------------------- ⎞
id = – ISeff – JTUNeff ⋅ ⎜ e NTUN ⋅ vt – 1⎟
⎝ ⎠
For breakdown, set the BV (VB) parameter, which induces reverse-breakdown
(or avalanche). You can see this effect in Zener diodes. It occurs when anode-
cathode voltage is less than the breakdown voltage (BV). To model this action,
measure the voltage (BV) and the current (IBV), at the reverse-knee or at the
onset of avalanche.

Note: BV must be a positive number.

Breakdown: vd < – BV
– vd
– ⎛⎝ ---------------------------⎞⎠
vd + BVeff
N ⋅ vt ⎛ ---------------------------
NTUN ⋅ vt ⎞
-
id = – ISeff ⋅ e – JTUNeff ⋅ ⎜ e – 1⎟
⎝ ⎠
The device model adjusts the BV parameter to obtain BVeff :
– BV
---------------
ibreak = – ISeff ⋅ ⎛ e N ⋅ vt – 1⎞
⎝ ⎠

If IBVeff > ibreak , then:

BVeff = BV – NBV⇒vt⇒ln ⎛ -----------------⎞

IBVeff
⎝ ibreak⎠

Otherwise:
IBVeff = ibreak
Most diodes do not behave as ideal diodes. The IK and IKR parameters are
called high-level injection parameters. They tend to limit the exponential
increase in current.

Note: Diode models use the exponential equation in both the forward
and reverse regions.

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Forward Bias
id1
id = ----------------------------------
1/2
-
⎛ id1
1 + ------------- ⎞
⎝ IKeff⎠

Reverse Bias
id1
id = --------------------------------------
1/2
-
1 + ⎛ -----------------⎞
id1
⎝ IKReff⎠

For vd ≥ – BVeff :
vd – vd
⎛ ---------------
N ⋅ vt ⎞ ⎛ ---------------------------
NTUN ⋅ vt ⎞
-
id1 = ISeff ⋅ ⎜ e – 1⎟ – JTUNeff ⋅ ⎜ e – 1⎟
⎝ ⎠ ⎝ ⎠
Otherwise:
vd ⎛ vd + BVeff⎞
– ⎝ ---------------------------⎠ – vd
⎛ ---------------
N ⋅ vt ⎞ NBV ⋅ vt ⎛ ---------------------------
NTUN ⋅ vt ⎞
-
id1 = – ISeff ⋅ ⎜ e – 1⎟ – ISeff ⋅ e – JTUNeff ⋅ ⎜ e – 1⎟
⎝ ⎠ ⎝ ⎠
From DC measurements of the forward-biased diode characteristics, you can
estimate:
■
Reverse-saturation current (IS)
■
Emission coefficient (N)
■ Model parameter (RS)
You can determine N from the slope of the diode characteristic in the ideal
region. In most cases, the emission coefficient is the value of the unit, but is
closer to 2 for MOS diodes.
At higher bias levels, the diode current deviates from the ideal exponential
characteristic, due to ohmic resistance in the diode, and the effects of high-level
injection. The deviation of the actual diode voltage (from the ideal exponential
characteristic), at a specific current, determines the value of RS. In practice,
simulation of diode device models estimates RS at several values of id, and
averages them, because the value of RS depends upon diode current.

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Using Diode Capacitance Equations

In Figure 11 on page 65, cd models the diode capacitance. The cd capacitance
is a combination of diffusion (cdiff), depletion (cdep), metal (cmetal), and poly
(cpoly) capacitances.
cd = cdiff + cdep + cmetal + cpoly
Using Diffusion Capacitance Equations
The transit time (TT) models the diffusion capacitance, caused by injected
minority carriers. In practice, simulation of diode models estimates TT, from
pulsed time-delay measurements.
∂id
cdiff = TT ⋅ --------
∂vd
Using Depletion Capacitance Equations
To model depletion capacitance, diode device models use the junction bottom
and junction periphery capacitances. The formula for both bottom area and
periphery capacitances is similar, but each has its own model parameters. To
select either of the two equations for forward-bias junction capacitance,
use .OPTION DCAP.
DCAP = 1
The capacitance formula for the junction bottom area is:
vd < FC ⋅ PB

vd – MJ
cdepa = CJeff ⋅ ⎛ 1 – -------⎞
⎝ PB⎠

vd ≥ FC ⋅ PB
vd
1 – FC ⇒1 ( + MJ ) + MJ ⋅ -------
PB
cdepa = CJeff ⋅ --------------------------------------------------------------------------
-
( 1 – FC ) ( 1 + MJ )
The capacitance formula for the junction periphery is: vd < FCS ⋅ PHP

vd – MJSW
cdepp = CJPeff ⋅ ⎛ 1 – ------------⎞
⎝ PHP⎠

vd ≥ FCS ⋅ PHP

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vd
1 – FCS Þ ( 1 + MJSW ) + MJSW ⋅ ------------
PHP
cdepp = CJPeff ⋅ ---------------------------------------------------------------------------------------------------
( 1 – FCS ) ( 1 + MJSW )
cdep = cdepa + cdepp
DCAP = 2 (default)
The capacitance formula for the total depletion is:
vd < 0

vd – MJ vd – MJSW
cdep = CJeff ⋅ ⎛ 1 – -------⎞ + CJPeff ⋅ ⎛ 1 – ------------⎞
⎝ PB⎠ ⎝ PHP⎠

vd ≥ 0

cdep = CJeff ⋅ ⎛ 1 + MJ ⋅ -------⎞ + CJPeff ⋅ ⎛ 1 + MJSW ⋅ ------------⎞

vd vd
⎝ PB⎠ ⎝ PHP⎠
DCAP = 3
Limits peak depletion capacitance to FC ⋅ CGSeff or FC ⋅ CGSeff with proper
fall-off when the forward bias exceeds PB (FC> 1).
Metal and Poly Capacitance Equations (LEVEL=3 Only)
To determine the metal and poly capacitances, use the following equations:
ε ox
cmetal = ⎛⎝ ----------⎞⎠ ⋅ ( WPeff + XPeff ) ⋅ ( LPeff + XPeff ) ⋅ M
XOI

ε ox
cpoly = ⎛ -------------⎞ ⋅ ( WMeff + XMeff ) ⋅ ( LMeff + XMeff ) ⋅ M
⎝ XOM⎠

Using Noise Equations

Figure 13 on page 66 shows the noise model for a diode. An independent
current source (inrs) in parallel with the resistor, models the thermal noise
that a resistor generates. To determine the value of inrs, use:

4 ⋅ k ⋅ t 1/2
inrs = ⎛ ---------------------⎞
⎝ RSeff ⎠

The unit of inrs is Amp/(Hz)1/2.

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The ind current source models the shot and flicker noise of the diode. The
following equation defines ind:

KF ⋅ id AF 1 / 2
ind = ⎛⎝ 2 ⋅ q ⋅ id + --------------------------⎞⎠
f

Temperature Compensation Equations

This section describes the temperature-compensation equations.
Energy Gap Temperature Equations
The equations below determine the energy gap for temperature compensation.
TLEV = 0 or 1
tnom 2
egnom = 1.16 – 7.02e-4 ⇒-----------------------------------
tnom + 1108.0

t2
eg ( t ) = 1.16 – 7.02e-4 ⇒------------------------
t + 1108.0
TLEV = 2
tnom 2
egnom = EG – GAP1 ⇒-----------------------------------
tnom + GAP2

t2
eg ( t ) = EG – GAP1 ⇒-----------------------
t + GAP2
Leakage Current Temperature Equations
facln
-------------
JS ( t ) = JS ⋅ e N
facln
-------------
JSW ( t ) = JSW ⋅ e N

TLEV = 0 or 1

facln = ---------------------- – ----------- + XTI ⋅ ln ⎛ -------------⎞

EG EG t
vt ( tnom ) vt ( t ) ⎝ tnom⎠

TLEV = 2

eg ( t )
facln = ---------------------- – ------------ + XTI ⋅ ln ⎛ -------------⎞
egnom t
vt ( tnom ) vt ( t ) ⎝ tnom⎠

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Tunneling Current Temperature Equations

TLEV = 0 or 1

faclnt = KEG ⋅ ⎛---------------------- – ----------- ⎞ + XTITUN ⋅ ln ⎛ -------------⎞

EG EG t
⎝vt ( tnom ) vt ( t ) ⎠ ⎝ tnom⎠

TLEV = 2

eg ( t )
faclnt = KEG ⋅ ⎛---------------------- – ------------ ⎞ + XTITUN ⋅ ln ⎛ -------------⎞
egnom t
⎝ vt ( tnom ) vt ( t ) ⎠ ⎝ tnom⎠

Breakdown-Voltage Temperature Equations

TLEV = 0
BV ( t ) = BV – TCV ⇒Δt
TLEV = 1 or 2
BV ( t ) = BV ⋅ ( 1 – TCV ⇒Δt )
facInt
JTUN ( t ) = JTUN ⋅ e
facInt
JTUNSW ( t ) = JTUNSW ⋅ e
Transit-Time Temperature Equations
TT ( t ) = TT ⋅ ( 1 + TTT1 ⋅ Δt + TTT2 ⋅ Δt 2 )
Junction Built-in Potential Temperature Equations
TLEVC = 0

egnom eg ( t )
PB ( t ) = PB ⋅ ⎛ -------------⎞ – vt ( t ) ⇒ 3 ⋅ ln ⎛ -------------⎞ + ---------------------- – ------------
t t
⎝ tnom⎠ ⎝ tnom⎠ vt ( tnom ) vt ( t )

eg ( t )
PHP ( t ) = PHP ⋅ ------------- – vt ( t ) ⇒ 3 ⋅ ln ⎛ -------------⎞ + ---------------------- – ------------
t t egnom
tnom ⎝ tnom ⎠ vt ( tnom ) vt ( t )
TLEVC = 1 or 2
PB ( t ) = PB – TPB ⇒Δt
PHP ( t ) = PHP – TPHP ⇒Δt
TLEVC = 3
PB ( t ) = PB + dpbdt ⋅ Δt
PHP ( t ) = PHP + dphpdt ⋅ Δt

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If TLEVC = 3 and TLEV = 0 or 1, then:

– egnom + 3 ⋅ vt ( tnom ) + ( 1.16 – egnom ) ⋅ ⎛ 2 – -------------------------------⎞ – PB

tnom
⎝ tnom + 1108⎠
dpbdt = ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom

– egnom + 3 ⋅ vt ( tnom ) + ( 1.16 – egnom ) ⋅ ⎛⎝ 2 – -------------------------------⎞⎠ – PHB

tnom
tnom + 1108
dphbdt = --------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom
If TLEV = 2:

– egnom + 3 ⋅ vt ( tnom ) + ( EG – egnom ) ⋅ ⎛⎝ 2 – -----------------------------------⎞⎠ – PB

tnom
tnom + GAP2
dpbdt = -----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom

– egnom + 3 ⋅ vt ( tnom ) + ( EG – egnom ) ⋅ ⎛ 2 – -----------------------------------⎞ – PHP

tnom
⎝ tnom + GAP2⎠
dphpdt = ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom
Junction Capacitance Temperature Equations
TLEVC = 0

PB ( t )
CJ ( t ) = CJ ⋅ 1 + MJ ⋅ ⎛⎝ 4.0e-4 ⇒Δt – -------------- + 1⎞⎠
PB

PHP ( t )
CJSW ( t ) = CJSW ⋅ 1 + MJSW ⋅ ⎛ 4.0e-4 ⇒Δt – ------------------- + 1⎞
⎝ PHP ⎠

TLEVC = 1
CJ ( t ) = CJ ⋅ ( 1 + CTA ⋅ Δt )
CJSW ( t ) = CJSW ⋅ ( 1 + CTP ⋅ Δt )
TLEVC = 2

PB MJ
CJ ( t ) = CJ ⋅ ⎛ --------------⎞
⎝ PB ( t )⎠

PHP MJSW
CJSW ( t ) = CJSW ⋅ ⎛ -------------------⎞
⎝ PHP ( t )⎠

TLEVC = 3

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Δt
CJ ( t ) = CJ ⋅ ⎛ 1 – 0.5 ⇒dpbdt Þ -------⎞
⎝ PB⎠

Δt
CJSW ( t ) = CJSW ⋅ ⎛ 1 – 0.5 ⋅ dphpdt ⋅ ------------⎞
⎝ PHP⎠
Grading Coefficient Temperature Equation
MJ ( t ) = MJ ⋅ ( 1 + TM1 ⋅ Δt + TM2 ⋅ Δt 2 )
Resistance Temperature Equations
RS ( t ) = RS ⋅ ( 1 + TRS ⋅ Δt )

Using the JUNCAP Models

This section describes the JUNCAP (junction capacitance) diode models:
JUNCAP1 and JUNCAP2. These diodes models have been implemented in
HSPICE as
■
Level 4 = JUNCAP1
■
Level 6 = JUNCAP2
For a full description of the JUNCAP models, see
http://www.semiconductors.philips.com/Philips_Models/.
You can use the .MODEL statement to include a JUNCAP (junction
capacitance) model in your HSPICE netlist. For a general description, see the ,
see the .MODEL statement in the HSPICE Reference Manual: Commands and
Control Options.
Input Syntax
Dxxx na nb modelname [area=val] [pj=val] [pgate=val]
+ [m=>val] [dtemp=val] [off=val] [IC=val]
.OPTION list

Parameter Description

Dxxx Diode element name. Must begin with D, followed by up to 1023

alphanumeric characters.

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Parameter Description

na Positive terminal (anode) node name. The series resistor for the
equivalent circuit is attached to this terminal.

nb Negative terminal (cathode) node name.

mname Diode model name reference.

area Diode area. In the model card, AB can use this value.

pj Length of the side-wall in the AB diffusion area, which is not under

the gate. In the model card, LS uses this value.

pgate Length of the side-wall in the AB diffusion area, which is under the
gate. In the model card, LG uses this value.

m Multiplier to simulate multiple diodes in parallel. The M setting affects

all currents, capacitances, and resistances. The default is 1.

dtemp The difference between the element temperature and the circuit
temperature in degrees celsius. The default is DTA.

off Sets initial conditions for this element to OFF in DC analysis.

Default=ON.

ic Initial voltage across a diode element. Use this value when you
specify the UIC option in the .TRAN statement. The .IC statement
overrides this value.

.OPTION list Prints the updated temperature parameters for the JUNCAP diode
model.

JUNCAP1 Model
To use this model, specify:
.MODEL mname D LEVEL=4 [keyword=val]

Parameter Description

mname Model name. The diode element uses this name to refer to the
model.

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Parameter Description

D Symbol that identifies a diode model.

LEVEL Symbol that identifies a diode model.

keywords Model parameter keywords.

Example
.model MD D LEVEL=4
+ AB=2E-12 LS=2E-6 LG=1.3E-6 DTA=0 TR=30 VR=0.3 JSGBR=1.2e-3
+ JSDBR=1.3e-3 JSGSR=1.1e-3 JSDSR=1.3e-3 JSGGR=1.4e-3
+ JSDGR=1.4e-3 NB=1.6 NS=1.3 NG=1.3 VB=0.9 CJBR=1.2e-12
+ CJSR=1.2e-12 CJGR=1.3e-12 VDBR=1.6 VDSR=1.3 VGDR=1.2 PB=0.5
+ PS=0.6 PG=0.4

Model Parameters
The JUNCAP1 model parameters are listed in Table 22.
Table 22 JUNCAP1 Model Parameters

Name Unit Default Min. Description

AB m2 1e-12 0.0 Diffusion area.

LS m 0.0 0.0 Length of the side-wall for the AB diffusion area,

which is not under the gate. (Default deviates from
Philips JUNCAP =1.0e-8).

LG m 0.0 0.0 Length of the side-wall for the AB diffusion area,

which is under the gate. (Default deviates from
Philips JUNCAP =1.0e-6).

DTA °C 0.0 Temperature offset of Juncap element with respect

to TA.

TR °C 25 -273.15 Temperature at which simulation finds parameter

values.

VR V 0.0 Voltage at which simulation finds parameter values.

JSGBR Am-2 1.0e-3 0.0 Bottom saturation-current density, due to

generating electron holes at V=VR.

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Table 22 JUNCAP1 Model Parameters (Continued)

Name Unit Default Min. Description

JSDBR Am-2 1.0e-3 0.0 Bottom saturation-current density, due to diffusion

from back-contact.

JSGSR Am-2 1.0e-3 0.0 Sidewall saturation-current density, due to

generating electron holes at V=VR

JSDSR Am-2 1.0e-3 0.0 Sidewall saturation-current density, due to diffusion

from back-contact.

JSGGR Am-2 1.0e-3 0.0 Gate-edge saturation-current density, due to

generating electron holes at V=VR.

JSDGR Am-2 1.0e-3 0.0 Gate-edge saturation-current density, due to

diffusion from back-contact.

NB 1.0 0.1 Emission coefficient of the bottom forward current.

NS 1.0 0.1 Emission coefficient of the sidewall forward current.

NG 1.0 0.1 Emission coefficient of the gate-edge forward

current.

VB V 0.9 Reverse breakdown voltage.

CJBR Fm-2 1.0E-12 0.0 Bottom junction capacitance, at V=VR.

CJSR Fm-2 1.0E-12 0.0 Sidewall junction capacitance, at V=VR.

CJGR Fm-2 1.0E-12 0.0 Gate-edge junction capacitance, at V=VR.

VDBR V 1.00 0.05 Diffusion voltage of the bottom junction, at T=TR.

VDSR V 1.00 0.05 Diffusion voltage of the sidewall junction, at T=TR.

VDGR V 1.00 0.05 Diffusion voltage of the gate-edge junction.

PB 0.40 0.05 Grading coefficient of the bottom junction.

PS 0.40 0.05 Grading coefficient of the sidewall junction.

PG 0.40 0.05 Grading coefficient of the gate-edge junction.

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Theory
This section summarizes the elementary physics of a junction diode. Refer to
semiconductor textbooks for additional information.
You can represent the current voltage characteristics as follows:

exp ⎛ ------⎞ – 1
2 qv
J = {J d ( n i + ( J g ( n i, V ) ) }⋅
⎝ kT⎠

3---
–Eg
ni T ⋅ exp ⎛ ---------⎞
2
⎝ 2kT⎠

Quantity Units Description

J Am-2 Total reverse-current density.

Jd Am-2 Diffusion saturation-current density.

Jg Am-2 Generation-current density.

ni m-3 Intrinsic carrier concentration.

V V Voltage, across the diode.

Eg J Energy gap.

k JK-1 Boltzmann constant.

T K Temperature.

For V<VD, this equation describes the charge of the junction capacitance:

V 1–P
Q = Q j 1 – ⎛ 1 – -------⎞
⎝ V D⎠

Quantity Units Description

Q C Total diode-junction charge.

Qj C Junction charge, at built-in voltage.

V V Voltage, across the diode.

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Quantity Units Description

Vd V Diffusion voltage at the junction.

P Grading coefficient for the junction.

JUNCAP Model Equations

The JUNCAP model describes reverse-biasing of source, drain or well-to-bulk
junction devices. Similar to the MOS model, this model uses quasi-static
approximations (in charge equations) to formulate current equations and to
model AC effects.
To include the effects from differences in the sidewall, bottom, and gate-edge
junction profiles, the JUNCAP model calculates these three contributions
separately.
JUNCAP also models both the diffusion and the generation currents, each with
individual temperature and voltage dependence.
In the JUNCAP model, the gate-edge junction (very close to the surface)
provides a part of the total charge. The MOS model charge equations also
includes this charge so simulation counts it twice. However, this results in only
a very minor error.
The next section shows the model equations. For the model to operate
correctly in a circuit simulator environment, you must specify some numerical
additions (see the Nomenclature section). You must include any fixed
capacitance that is present on a node (such as metal-1-to-substrate
capacitance) in either a fixed capacitor statement or INTCAP. These
capacitances are not part of the JUNCAP model as they were in the old
NODCAP model.

Nomenclature
Table 23 lists the electrical variable parameters:
Table 23 JUNCAP Model Electrical Variable Parameters

No. Variable Program Name Units Description

1 Va VA V Potential, applied to the anode.

2 Vk VK V Potential, applied to the cathode.

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Table 23 JUNCAP Model Electrical Variable Parameters (Continued)

No. Variable Program Name Units Description

3 Ia IA A DC current, into the anode.

4 Ik IK A DC current, into the cathode.

5 Qa QA C Charge in a device, attributed to the anode.

6 Qk QK C Charge in a device, attributed to the cathode.

Note: The model card lists the parameters. See JUNCAP model syntax
earlier in this chapter.

Table 24 lists internal variables and parameters:

Table 24 JUNCAP Model Internal Variables and Parameters

Variable or Program
No. Parameter Name Units Description

1 Vdb VDB V Diffusion voltage of the AB bottom area.

2 Vds VDS V Diffusion voltage of the LS Locos-edge.

3 Vdg VDG V Diffusion voltage of the LG gate-edge.

4 Cjb CJB F Capacitance of the AB bottom area.

5 Cjs CJS F Capacitance of the LS Locos-edge.

6 Cjg CJG F Capacitance of the LG gate-edge.

7 Isdb ISDB A Diffusion saturation current of AB bottom area.

8 Isds ISDS A Diffusion saturation current of LS Locos-edge.

9 Isdg ISDG A Diffusion saturation current of LG gate-edge.

10 Isgb ISGB A Generation saturation current of AB bottom area.

11 Isgs ISGS A Generation saturation current of LS Locos-edge.

12 Isgg ISGG A Generation saturation current of LG gate-edge.

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Table 24 JUNCAP Model Internal Variables and Parameters (Continued)

Variable or Program
No. Parameter Name Units Description

13 Ta TA C Ambient circuit temperature.

14 Tkd TKD K Absolute temperature of the junction/device.

15 V V V Diode bias voltage (V=VA - VK).

16 I I A Total DC current, from anode to cathode:

(I = IA = -IK)

17 Q Q C Total junction charge: (Q = QA = - QK)

ON/OFF Condition
Solving a circuit involves successive calculations. The calculations start from a
set of initial guesses for the electrical quantities of the non-linear elements. The
devices start in the default state.

DC Operating Point Output

The output of a DC operating point calculation contains information about the
state of a device, at its operation point.

Note: G min conductance connects in parallel to the G conductance.

This conductance influences the DC operating output.

Temperature, Geometry and Voltage Dependence

The general scaling rules, which apply to all three components of the JUNCAP
model, are:
T KR = T 0 + T R

T KD = T 0 + T A + DT A

T KR
V TR = k ⋅ ---------
q

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T KD
V TD = K ⋅ ----------
q
( 7.02 ⋅ 10e – 4 ⋅ T KR ⋅ T KR )
V gR = 1.16 – --------------------------------------------------------------------------
( 1108.0 + T KR )

( 7.02 ⋅ 10e – 4 ⋅ T KR ⋅ T KD )
V gD = 1.16 – --------------------------------------------------------------------------
( 1108.0 + T KD )

T KD 1.5 V gR V gD
F TD = ⎛ ----------⎞ ⋅ exp ⎛⎝ ------------------------ – ------------------------- ⎞⎠
⎝ T KR ⎠ ( 2 ⋅ V TR ) ( 2 ⋅ V TD )

Internal Reference
The following equations specify the internal reference parameters for the
bottom component:
V DBR ⋅ T KD
⎛ V = ----------------------------------------------------------
-⎞
⎝ DB T KR – 2 ⋅ V TD ⋅ 1nF TD⎠

( V DBR – V R ) PB
C JB = C JBR ⋅ A B ⋅ ⎛ ------------------------------⎞
⎝ V DB ⎠

V DB PB
I SGB = J SGBR ⋅ F TD ⋅ A B ⋅ ⎛⎝ ------------------------------⎞⎠
( V DBR – V R )

I SDB = J SDBR ⋅ F TD ⋅ F TD ⋅ A B
Locos-edge and gate-edge components use similar formulations:
■ Replace the B (bottom) index with S (locos-edge) or G (gate-edge).
■
Replace the AB (bottom) area with LS (locos-edge) or LG (gate-edge).
For the locos-edge:
V DSR ⋅ T KR
V DS = -----------------------------------------------------------
T KR – 2 ⋅ V TD ⋅ 1nF TD

( V DSR – V R ) PS
C JS = C JSR ⋅ L S ⋅ ⎛ ------------------------------⎞
⎝ V DS ⎠

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V DS PS
I SGS = J SGSR ⋅ F TD ⋅ L S ⋅ ⎛ ------------------------------⎞
⎝ ( V DSR – V R )⎠

I SDS = J SDSR ⋅ F TD ⋅ F TD ⋅ L S
For the gate-edge:
V DGR ⋅ T KD
V DG = -----------------------------------------------------------
T KR – 2 ⋅ V TD ⋅ 1nF TD

( V DGR – V R ) PG
C JG = C JGR ⋅ L G ⋅ ⎛ -------------------------------⎞
⎝ V DG ⎠

V DG PG
I SGS = J SGGR ⋅ F TD ⋅ L G ⋅ ⎛ -------------------------------⎞
⎝ ( V DGR – V R )⎠

I SDS = J SDGR ⋅ F TD ⋅ F TD ⋅ L G

Note: The remainder of this section shows the equations only for the
bottom component.

JUNCAP Capacitor and Leakage Current Model

The charge description defines the following internal parameter:
Q JDB = C JB ⋅ V DB ( 1 – P B )
To prevent an unlimited increase in the voltage derivative of the charge, the
charge description consists of two parts:
■ Original power function
■
Supplemented quadratic function
The cross-over point between these regions (indicated as Vl) defines the
following parameters:
1
⎛ ( 1 + P B )⎞ P-----B-
F CB = 1 – --------------------
⎝ 3 ⎠
V LB = F CB ⋅ V DB

C LB = C JB ( 1 – F CB ) –P B

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Q LB = Q JDB ( 1 – ( 1 – F CB ) ( 1 – P B ))

( 1 – ( 1 – V ) ) ( 1 – PB )
Q JBV = Q JCB ⋅ ⎛ -------------------------------⎞ V< V LB
⎝ V DB ⎠

1 + ( P B ( V – V LB ) )
Q LB + C LB ( V – V LB ) ⋅ ⎛ ---------------------------------------------------⎞ V >= V LB ( 12.63 )
⎝ 2 ⋅ V DB ⋅ ( 1 – F CB )⎠

Use similar expressions for the locos-edge (QJSV) and gate-edge (QJGV)
charges.
The following equation describes the total charge characteristic:
Q = Q JBV + Q JSV + Q JGV
From Equation 12.63 (above), you can use elementary mathematics to derive
simple equations for the capacitance of the bottom area:
1 – v PB
C JBV = C JB ⋅ ⎛ 1 ⁄ ⎛ -----------⎞ ⎞ V < V LB
⎝ ⎝ V DB ⎠ ⎠

( V – V LB )
C LB + C LB ⋅ P B ⋅ ⎛ -----------------------------------------⎞ V ≥ V LB
⎝ V DB ⋅ ( 1 – F CB )⎠

Similar expressions exist for CJSV and CJGV.

Total capacitance:
C = C JBV + C JSV + C JGV

Diffusion and Generation Currents

Using the scaled parameters from the preceding section, you can express the
diffusion and generation current components as:

I DB = I SDB ⋅ exp ⎛⎝ ----------------------------- – 1⎞⎠

V
( B ⋅ V TD )
N

( V DB – V ) PB
I GB = I SGB ⋅ ⎛ ------------------------⎞ ⋅ ⎛ exp ⎛ ⎛ ------------------------⎞ – 1⎞ ⎞
V
V ≤V DB
⎝ V DB ⎠ ⎝ ⎝ ⎝ N B ⋅ V TD⎠ ⎠⎠

0 V > V DB

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■
The first relation, concerning the diffusion component, is valid over the
whole operating range.
■ The second relation, describing the generation current, shows an unlimited
increase in the derivative of this function, at V=VDB.
Therefore, the power function merges at V=0.0 with a hyperbolic function in the
forward-bias range. Simulating the model then divides the exponential part by
exp ( V ⁄ ( N B ⋅ V TD ) ) . This enables a gradual decrease in the generation-current
component.
This calculation uses the hyperbolic function:
I HYP = F SB ( V + V AB ) –B
The B parameter controls the decrease in current for voltages V>0.0 for all
generation components. The model sets B to a fixed value of 2. The continuity
constraints of the function and derivative in the merge point lead to the
following relations for FSB and VAB:

V DB
V AB = B ⋅ ----------
PB

F SB = I SGB ⋅ V AB B
The generation current voltage characteristic in the forward region, becomes:
I GB = F SB ⁄ ( ( V + V AB ) B ) ⋅ ( 1 – exp ( – v ) ⁄ ( N B ⋅ V TD ) )

Final Model Equations

The final model equations for the currents of the bottom area, are:
I DB = I SDB ⋅ ( exp ( V ⁄ ( N B ⋅ V TD ) ) – 1 )

V DB – V PB
I GB = I SGB ⋅ ⎛ -------------------⎞ ⋅ exp ⎛ -----------------------------⎞ – 1
V
V ≤0
⎝ V DB ⎠ ⎝ ( N B ⋅ V TD )⎠

B
Isgb ⋅ ⎛ -------------------------⎞ ⋅ ⎛ 1 – exp ⎛ ----------------------------⎞ ⎞
Vab –V
V > 0.0
⎝ ( V + Vab )⎠ ⎝ ⎝ ( Nb ⋅ Vtd )⎠ ⎠

Use similar expressions for the locos-edge and gate-edge components.

The following equation expresses the total junction current:
I = ( I DB + I GB ) + ( I DS + I GS ) + ( I DG + I GG )

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JUNCAP2 Model
The JUNCAP2 model is a compact MOS model intended to describe the
behavior of the diodes that are formed by the source, drain, or well-to-bulk
junctions in MOSFETs. It is the successor to the JUNCAP1 model, and was
developed by Koninklijke Philips Electronics N.V.
Physical Effects
The following physical effects have been included in the JUNCAP2 model:
■
Geometrical scaling
■
Depletion capacitance
■
Ideal current
■
Shockley-Read-Hall current
■
Trap-assisted tunneling current
■
Band-to-band tunneling current
■
Avalanche breakdown
■
Noise
For a full description of the JUNCAP2 model, see
http://www.semiconductors.philips.com/Philips_Models/.

JUNCAP2 Model Updates

JUNCAP Model 200.3.3 Update
Fixed bug in FJUNQ-based selection-criterion in JUNCAP-express charge
model.
JUNCAP Model 200.3.0 Update
The newly introduced express-option of the JUNCAP2 model, invoked by
setting SWJUNEXP=1, allows the user to trade some simulation accuracy for
simulation speed. In transient analyses, a simulation time reduction of up to a
factor of 5 (of the simulation time associated with JUNCAP2) has been
demonstrated with a very limited loss of accuracy. This is achieved by a
creating a strongly simplified IV-model, combined with a more extensive
initialization code.

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 Chapter 3: Diodes
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JUNCAP Model 200.2.0 Update

■
The band-to-band tunneling equations have been modified. At temperatures
lower than the reference temperature, Vj can become lower than VBIR. This
caused numerical problems in the model, which, in turn, sometimes resulted
in convergence problems in the simulator. An alternative formulation of the
equations has been implemented that avoids these problems.
■
Minor bug fixes.

Usage in HSPICE
The JUNCAP2 model is LEVEL=6 in the Synopsys diode models. Each version
can be identified with model parameter VERSION.
To use this model, specify:
.MODEL mname D LEVEL=6 [keyword=val]

Parameter Description

mname Model name. The diode element uses this name to refer to the model.

D Symbol that identifies a diode model.

LEVEL Symbol that identifies a diode model.

keywords Model parameter keywords.

Example
.MODEL NDIO D LEVEL=6 VERSION=200.33
+ TYPE=1.000E+00 TRJ=21.000E+00 DTA=0.000E+00 IMAX=1.000E+03
+ CJORBOT=1.000E-03 CJORSTI=1.000E-09 CJORGAT=1.000E-09
+ VBIRBOT=1.000E+00 VBIRSTI=1.000E+00 VBIRGAT=1.000E+00
+ PBOT=500.000E-03 PSTI=500.000E-03 PGAT=500.000E-03
+ PHIGBOT=1.160E+00 PHIGSTI=1.160E+00 PHIGGAT=1.160E+00
+ IDSATRBOT=1.000E-12 IDSATRSTI=1.000E-18 IDSATRGAT=1.000E-18
+ CSRHBOT=100.000E+00 CSRHSTI=100.000E-06 CSRHGAT=100.000E-06
+ XJUNSTI=100.000E-09 XJUNGAT=100.000E-09 CTATBOT=100.000E+00
+ CTATSTI=100.000E-06 CTATGAT=100.000E-06 MEFFTATBOT=250.000E-03
+ MEFFTATSTI=250.000E-03 MEFFTATGAT=250.000E-03
+ CBBTBOT=1.000E-12 CBBTSTI=1.000E-18 CBBTGAT=1.000E-18
+ FBBTRBOT=1.000E+09 FBBTRSTI=1.000E+09 FBBTRGAT=1.000E+09
+ STFBBTBOT=-1.000E-03 STFBBTSTI=-1.000E-03 STFBBTGAT=-1.000E-03
+ VBRBOT=10.000E+00 VBRSTI=10.000E+00 VBRGAT=10.000E+00
+ PBRBOT=4.000E+00 PBRSTI=4.000E+00 PBRGAT=4.000E+00

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Model Parameters
Table 25 lists the JUNCAP2 model parameters.
Table 25 JUNCAP2 Model Parameters

Name Unit Default Description

LEVEL - 1 Diode model level

TYPE - 1 Switch (-1 or 1) to select P-N and N- P junction

VERSION - 200.33 Version number for model update

TRJ °C 21 Reference temperature

DTA °C 0 Temperature offset with respect to ambient temperature

IMAX A 1000 Maximum current up to which forward current behaves

exponentially

Capacitance parameters

CJORBOT F/m2 1e-3 Zero-bias capacitance per unit-of area of bottom

component

CJORSTI F/m 1e-9 Zero-bias capacitance per unit-of length of STI-edge

component

CJORGAT F/m 1e-9 Zero-bias capacitance per unit-of length of gate-edge

component

VBIRBOT V 1 Built-in voltage at the reference temperature of bottom

component

VBIRSTI V 1 Built-in voltage at the reference temperature of STI-

edge component

VBIRGAT V 1 Built-in voltage at the reference temperature of gate-

edge component

PBOT - 0:5 Grading coefficient of bottom component

PSTI - 0:5 Grading coefficient of STI-edge component

PGAT - 0:5 Grading coefficient of gate-edge component

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Table 25 JUNCAP2 Model Parameters (Continued)

Name Unit Default Description

Ideal-current parameters

PHIGBOT V 1.16 Zero-temperature bandgap voltage of bottom

component

PHIGSTI V 1.16 Zero-temperature bandgap voltage of STI-edge

component

PHIGGAT V 1.16 Zero-temperature bandgap voltage of gate-edge

component

IDSATRBOT A/m2 1e-12 Saturation current density at the reference temperature

of bottom component

IDSATRSTI A/m 1e-18 Saturation current density at the reference temperature

of STI-edge component

IDSATRGAT A/m 1e-18 Saturation current density at the reference temperature

of gate-edge component

Shockley-Read-Hall parameters

CSRHBOT A/m3 1e+2 Shockley-Read-Hall prefactor of bottom component

CSRHSTI A/m2 1e-4 Shockley-Read-Hall prefactor of STI-edge component

CSRHGAT A/m2 1e-4 Shockley-Read-Hall prefactor of gate-edge component

XJUNSTI m 1e-7 Junction depth of STI-edge component

XJUNGAT m 1e-7 Junction depth of gate-edge component

Trap-assisted tunneling parameters

CTATBOT A/m3 1e+2 Trap-assisted tunneling prefactor of bottom component

CTATSTI A/m2 1e-4 Trap-assisted tunneling prefactor of STI-edge

component

CTATGAT A/m2 1e-4 Trap-assisted tunneling prefactor of gate-edge

component

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Table 25 JUNCAP2 Model Parameters (Continued)

Name Unit Default Description

MEFFTATBOT - 0:25 Effective mass (in units of m0) for trap-assisted tunneling
of bottom component

MEFFTATSTI - 0:25 Effective mass (in units of m0) for trap-assisted tunneling
of STI-edge component

MEFFTATGAT - 0:25 Effective mass (in units of m0) for trap-assisted tunneling
of gate-edge component

Band-to-band tunneling parameters

CBBTBOT AV-3 1e-12 Band-to-band tunneling prefactor of bottom component

CBBTSTI AV-3m 1e-18 Band-to-band tunneling prefactor of STI-edge

component

CBBTGAT AV-3m 1e-18 Band-to-band tunneling prefactor of gate-edge

component

FBBTRBOT Vm-1 1e+9 Normalization field at the reference temperature for

band-to-band tunneling of bottom component

FBBTRSTI Vm-1 1e+9 Normalization field at the reference temperature for

band-to-band tunneling of STI-edge component

FBBTRGAT Vm-1 1e+9 Normalization field at the reference temperature for

band-to-band tunneling of gate-edge component

STFBBTBOT K-1 -1e-3 Temperature scaling parameter for band-to-band

tunneling of bottom component

STFBBTSTI K-1 -1e-3 Temperature scaling parameter for band-to-band

tunneling of STI-edge component

STFBBTGAT K-1 -1e-3 Temperature scaling parameter for band-to-band

tunneling of gate edge component

Avalanche and breakdown parameters

VBRBOT V 10 Breakdown voltage of bottom component

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 Chapter 3: Diodes
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Table 25 JUNCAP2 Model Parameters (Continued)

Name Unit Default Description

VBRSTI V 10 Breakdown voltage of STI-edge component

VBRGAT V 10 Breakdown voltage of gate-edge component

PBRBOT V 4 Breakdown onset tuning parameter of bottom

component

PBRSTI V 4 Breakdown onset tuning parameter of STI-edge

component

PBRGAT V 4 Breakdown onset tuning parameter of gate-edge

component

Using the Fowler-Nordheim Diode

The LEVEL=2 diode model parameter selects the Fowler-Nordheim model.
Fowler-Nordheim diodes can be either a metal-insulator-semiconductor or a
semiconductor-insulator-semiconductor layer device. The insulator is
sufficiently thin (100 Angstroms) to permit tunneling of carriers. It models:
■
Electrically-alterable memory cells
■ Air-gap switches
■
Other insulation-breakdown devices

Fowler-Nordheim Diode Model Parameters LEVEL=2

Table 26 shows the Fowler-Nordheim diode model parameters for LEVEL=2.

Table 26 Fowler-Nordheim Diode Model Parameters

Name (alias) Units Default Description

EF V/cm 1.0e8 Forward critical electric field.

ER V/cm EF Reverse critical electric field.

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Table 26 Fowler-Nordheim Diode Model Parameters (Continued)

Name (alias) Units Default Description

JF amp/V2 1.0e-10 Forward current coefficient for Fowler-

Nordheim.

JR amp/V2 JF Reverse current coefficient for Fowler-

Nordheim.

L m 0.0 Length of the diode for calculating the current

in Fowler-Nordheim.
Leff = L ⋅ SCALM ⋅ SHRINK + XWeff

TOX Å 100.0 Thickness of the oxide layer.

W m 0.0 Width of the diode for calculating the current

in Fowler-Nordheim.
Weff = W ⋅ SCALM ⋅ SHRINK + XWeff

XW m 0.0 XWeff = XW ⋅ SCALM

Using Fowler-Nordheim Diode Equations

The following forward and reverse non-linear current source equations model
the DC characteristics of the Fowler-Nordheim diode. In these equations:
AREAeff = Weff ⋅ Leff ⋅ M
Forward Bias
vd Š 0
– EF ÞTOX
vd 2 ----------------------------
id = AREAeff ⋅ JF ⋅ ⎛ ------------⎞ ⋅ e vd
⎝ TOX⎠

Reverse Bias
vd < 0
ER ⋅ TOX
vd 2 ---------------------------
id = – AREAeff ⇒JR ⇒⎛ ------------⎞ ⇒e vd
⎝ TOX⎠

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 Chapter 3: Diodes
Philips D500 Model (Advanced Diode Model), Level 5

Fowler-Nordheim Diode Capacitances

The Fowler-Nordheim diode capacitance is a constant, derived from:
ε ox
cd = AREAeff ⋅ ------------
TOX

Philips D500 Model (Advanced Diode Model), Level 5

The Diode 500 model provides a detailed description of the diode currents in
forward and reverse biased Si-diodes. It is meant to be used for DC, transient
and AC analysis. The Philips D500 model is available as Level 5 in the
Synopsys Diode models.
For more information about the D500 model, see:
http://www.nxp.com/Philips_Models/additional/advanced_diode/

Using the Philips D-500 Model

Set level=5 to identify the model as Philips D500 Model. You can use DTEMP
with this model to increase the temperature of individual elements, relative to
the circuit temperature. Set DTEMP on the element line.
The general syntax for the Diode element is the same as the other standard
diode models.
The available parameters are described in Table 27.
Table 27 Description of Philips D500 Parameters

Name Units Default Clip Clip Description

low high

Level - 5 - - Model level

IS A 7.13E-13 0.0 - Saturation current

N - 0.1 1.044 - Junction emission coefficient

VLC V 0.0 - - Voltage dependence at low forward current

VBR V 7.459 0.1 - Breakdown voltage

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Table 27 Description of Philips D500 Parameters (Continued)

Name Units Default Clip Clip Description

low high

V/cm EMVBR 1.36E6 1.0 - Electric field at breakdown

CSRH A/cm 7.44E-7 0.0 - Shockley-Read-Hall generation

CBBT A/V 3.255 0.0 - Band to band tunneling

RS Ohm 0.0 0.0 - Series resistance

CTAT A/cm 3.31E-6 - 0.0 Trap assisted tunneling

TAU S 500.0E-12 0.0 - Transit time

CJ F 7.0E-12 0.0 - Zero-bias depletion capacitance

VD V 0.90 - 0.05 Diffusion voltage

P - 0.40 0.05 0.99 Grading coefficient

TREF 25.0 -273.15 - Reference temperature

VG V 1.206 0.1 - Bandgap voltage

PTRS - 0.0 - - Power for temperature dependence of RS

KF - 0.0 0.0 - Flickernoise coefficient

AF - 1.0 0.01 - Flickernoise exponent

Equivalent Circuits and Equations

A full description of D-level-500 for diode is provided below. The DC/transient
and AC equivalent circuits are shown in Figure 14 and Figure 15 on page 105,
respectively.

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ID

RS
Qd
A K

Qr

Figure 14 DC/Transient Circuit for Diode

Temperature Effects
The actual simulation temperature is denoted by TEMP (in °C). The
temperature at which the parameters are determined is specified by TREF
(in °C.)
■
Conversion to Kelvins
TK = TEMP + 273.15 + DTA
TRK = TREF + 273.15
■
Thermal Voltages
– 23 –1
k = 1.3806226 ⋅ 10 JK
– 19
q = 1.6021918 ⋅ 10 C

V T = ⎛ ---⎞ ⋅ T K
k
⎝ q⎠

V TR = ⎛⎝ ---⎞⎠ ⋅ T RK
k
q
■
Depletion Capacitances
TK 3
F = ⎛ ---------⎞ ⋅ exp VG ⋅ ⎛ --------- – ------⎞
1 1
⎝ T RK⎠ ⎝ V TR V T⎠

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VD
VD T = --------- – 1n ( F ) ⋅ V T
V TR

VD P
CJ T = CJ ⋅ ⎛ -----------⎞
⎝ VD T⎠
■
Transit Times
T K 1.8
TAU T = TAU ⎛ ---------⎞
⎝ T RK⎠
■
Saturation Current
T K 1.8
IS T = IS ⋅ ⎛ ---------⎞ ⋅ exp -------- ⋅ ⎛ --------- – ------⎞
VG 1 1
⎝ T RK⎠ N ⎝ V TR V T⎠
■
Shockley-Read-Hall generation and trap assisted tunneling
TK 3⁄ 2
T up = ⎛ ---------⎞ ⋅ exp -------------------------- ⋅ ⎛ --------- – ------⎞
VG + VLC 1 1
⎝ T RK⎠ 2 ⎝ V TR V T⎠

CSRH T = CSRH ⋅ T up

CTAT T = CTAT ⋅ T up
3⁄ 2
ETAT T = 70.8 ⋅ T K
■
Band-to-Band Tunneling
CBBT T = CBBT (temperature independent)

–4 2
⎛ 7 4.21 ⋅ 10 ⋅ T K ⎞
F0 = 1.9 ⋅ 10 ⋅ ⎜ 1.04 – ------------------------------------------------⎟
⎝ 636 + T K ⎠
■
Avalanche Multiplication
dT = TEMP + DTA – 25° C
6
Bn = 1.23 ⋅ 10
–4 –6 2
Bn T = Bn ⋅ 1 + 7.2 ⋅ 10 ⋅ dT – 1.6 ⋅ 10 ⋅ dT

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■
Breakdown
T K 0.1
VBR T = VBR ⋅ ⎛ ---------⎞
⎝ T RK⎠

VD T + VBR T 1 – P
EMVBRT = EMVBR ⋅ ⎛⎝ -------------------------------⎞⎠
VD + VBR
■
Resistance
T K PTRS
RS T = RS ⋅ ⎛⎝ ---------⎞⎠
T RK
Model Constants and Parameter-Related Constants
K = 0.01
KET = 0.1
ETM = 3
■
Maximum Electric Field and Depletion Layer width at zero bias:
EMVBR T
E 0 = --------------------------------------
1–P
-
⎛ 1 + VBR T⎞
--------------
⎝ VD T ⎠

VD T
W 0 = ------------------------------
E0 ⋅ ( 1 – P )
Diode Currents
First, the maximum reverse junction voltage is defined.
■
Above this voltage the current will be extrapolated on a logarithmic scale.
– 0.99 ⋅ VBR T, V AK1 < – 0.99 ⋅ VBR T
Vj =
V AK1 , V AK1 ≥ – 0.99 ⋅ VBR T
■
Ideal Forward Current

⎧ Vj ⎫
Id f = IS T ⎨ exp ⎛ -----------------⎞ – 1 ⎬
⎝ N ⋅ V T⎠
⎩ ⎭

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■
Maximum Electric Field and Depletion Layer Width

⎧⎛ Vj ⎞ 2 ⎛ Vj ⎫ Vj ⎞
⎨ ⎝ 1 – ---------- - + ----------- ⋅ K⎞ ⎬ ⋅ ⎛ 1 – ---------- -
VD T ⎠ ⎝ VD T ⎠ ⎝ VD T⎠
⎩ ⎭
VD j = ----------------------------------------------------------------------------------------------------------
2
(1 – P)
E m = E 0 ⋅ VD j
P
W d = W 0 ⋅ VD j
■
Shockley-Read-Hall Generation
I srh = CSRH T ⋅ ( W d – W 0 )
■
Trap-Assisted Tunneling

E0 E0 2
----------------- + ETM – ⎛ ----------------- – ETM⎞ + KET
ETAT T ⎝ ETAT T ⎠
ET 0 = --------------------------------------------------------------------------------------------------------------
2

Em Em 2
----------------- + ETM – ⎛ ----------------- – ETM⎞ + KET
ETAT T ⎝ ETAT T ⎠
ET = --------------------------------------------------------------------------------------------------------------
2

⎧ 2 2 ⎫
⎪ exp ( ET ) – exp ( ET 0 ) ⎪
I tat = CTAT T ⋅ W d ⋅ ⎨ ----------------------------------------------------------- ⎬
⎪ Em ⎪
-----------------
⎩ ETAT T ⎭
■
Non-Ideal Forward Current including Tunneling

⎧ Em ⎫ VT
Is lf = CSRH T ⋅ ⎨ 6.28 + 38.58 ⋅ ⎛ -----------------⎞ ⋅ exp ( ET 0 ) ⎬ ⋅ -------
2
⎝ ETAT T⎠
⎩ ⎭ Em

Vj
exp ⎛ -----------------⎞ – 1
⎝ N ⋅ V T⎠
I lf = Is lf ⋅ ------------------------------------------------------------------------------------------------------ ⋅ exp ⎛⎝ ---------------------------⎞⎠
VLC
Vj 2 ⋅ N ⋅ VT
4 ⋅ exp ⎛ ---------------------------⎞ + exp ⎛ ---------------------------⎞
VLC
⎝ 2 ⋅ N ⋅ V T⎠ ⎝ 2 ⋅ N ⋅ V T⎠

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■
Band-to Band-Tunneling
– CBBT T ⋅ V j
I bbt = -----------------------------------------------
F0⎞ 1.5
⎛ ------ ⋅ exp ⎛ -------⎞
F0
-
⎝ E m⎠ ⎝ E m⎠
■
Avalanche Multiplication
Em 2 Bn T Bn T
μ = 0.3295 ⋅ ⎛⎝ -----------------------⎞⎠ ⋅ exp ----------------------- – ---------
EMVBR T EMVBR T E m
■
Total Diode Current
1 + exp ( – 2 ⋅ μ)
( Id f + I lf – I srh ) ⋅ --------------------------------------- – I bbt + I tat ⋅ exp ( – μ)
2
I d = ------------------------------------------------------------------------------------------------------------------------------------------
1 – 2 ⋅ μ ⋅ {1 + exp ( – 2 ⋅ μ) }
■
Extrapolation of the Reverse Current
I dBR = I d at V j = – 0.99 VBR T

dI d
G dBR = -------- at V j = – 0.99 VBR T
dV j

Id V AK1 ≥ – 0.99 VBR T

ID = V AK1 + – 0.99 VBR T
I dBR ⋅ exp ⎛ -----------------------------------------------⎞ G dBR V AK1 < – 0.99 VBR T
⎝ I dBR ⎠

Transient Model
Transient behavior is modeled using the DC equations.
■
Diffusion charge
Q D = TAU T ⋅ Id f
■ Depletion charge
⎛ --1-⎞
⎝ P⎠
FC = 1 – ⎛ -------------⎞
1+P
⎝ 3 ⎠

VD T
Q AT = CJ T ⋅ ⎛ ------------⎞
⎝ 1 – P⎠

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V L = FC ⋅ VD T
–P
C L = CJ T ⋅ ( 1 – FC )
(1 – P)
Q L = Q AT ⋅ {1 – ( 1 – FC ) }

Then, if V AK1 < V L

(1 – P)
⎧ V AK1 ⎫
Q T = Q AT ⋅ 1 – ⎨ 1 – ⎛ ------------⎞ ⎬
⎝ VD T ⎠
⎩ ⎭

Or, if V AK1 ≥ V L

⎧ P ⋅ ( V AK'1 – V L ) ⎫
Q T = V L + C L ⋅ ( V AK'1 – V L ) – ⎨ 1 + -------------------------------------------------- ⎬
⎩ 2 ⋅ VD T ⋅ ( 1 – FC ) ⎭

AC Linearized model
Using the appropriate definitions for the various circuit elements leads to the
following equations:
1
R D = ---------------------------------
dID ⁄ dV AK1

Where dID ⁄ dV AK1 is the first derivative of the total diode current with respect
to the Internal voltage Internal voltage V AK1 .
The capacitances are defined as:
–P
⎧ V AK1 ⎫
C T = CJ T ⋅ ⎨ 1 – ⎛ ------------⎞ ⎬ for V AK1 < V L
⎝ VD T ⎠
⎩ ⎭

⎧ P ⋅ ( V AK1 – V L ) ⎫
C T = C L ⋅ ⎨ 1 + ---------------------------------------- ⎬ for V AK1 ≥ V L
⎩ VD T ⋅ ( 1 – FC ) ⎭

Id f + IS T
C 1 = C T + TAU T ⋅ ⎛ ---------------------⎞
⎝ N ⋅ VT ⎠

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Converting National Semiconductor Models

RD iNRS

RS
C1
A K1 K

iN

Figure 15 AC equivalent circuit for Diode, including Noise Sources

Noise Model
For noise analysis, noise sources are added to the small signal model as
shown in Figure 15. In these equations f represents the operation frequency of
the transistor and is the Δf
bandwidth. When Δf is taken as 1 Hz, a noise density is obtained.
■
Thermal noise

2 4 ⋅ K ⋅ T K ⋅ Δf
iN RS = -----------------------------------------
RS T
■
Current noise (shot noise and 1/f noise)
2 Id f AF Δf
iN = 2 ⋅ q ⋅ Id f ⋅ Δf + KF + MULT ⋅ ----------------
- ⋅ -----
MULT f

Converting National Semiconductor Models

National Semiconductor’s circuit simulator provides a scaled diode model,
which is not the same as the diode device model. To use National
Semiconductor circuit models, do the following:
1. For a subcircuit that consists of the scaled diode model, make sure that the
subcircuit name is the same as the model name.

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Converting National Semiconductor Models

The .PARAM statement, inside the subcircuit, specifies the parameter

values for the scaled diode model.
2. Add a scaled diode model inside the subcircuit, then change the .MODEL
mname mtype statement to a .PARAM statement.
3. Ensure that the letter X precedes the names of all scaled diode elements.
4. Check that every parameter used in the .MODEL statement, inside the
subcircuit, also has a value in the .PARAM statement.

Using the Scaled Diode Subcircuit Definition

The scaled diode subcircuit definition converts the National Semiconductor
scaled diode model to a model that you can use in HSPICE. The .PARAM
parameter, inside the .SUBCKT, represents the .MODEL parameter in the
National circuit simulator.
To use this definition:
1. Replace the .MODEL mname statement with a .PARAM statement.
2. Change the model name to SDIODE.
Example
The following is an example of a scaled-diode subcircuit definition.
.SUBCKT SDIODE NP NN SF=1 SCJA=1 SCJP=0 SIS=1 SICS=1
+ SRS=1
D NP NN SDIODE
.PARAM IS=1.10E-18 N=1.03 EG=0.8 RS=20.7E3
+ CJA=0.19E-15 PHI=0.25 CJP=0.318E-15
+ EXA=0.5 EXP=0.325 CTC=6E-4
+ TRS=2.15M M=2
*
.MODEL SDIODE D
+ IS=’IS*SIS*SF’ CJA=’CJA*SF*SCJA’ CJP=’CJP*SF*SCJP’
+ RS=’RS*SRS/SF’ EXA=EXA EXP=EXP
+ N=N CTA=CTC CTP=CTC
+ TRS=TRS TLEV=1 TLEVC=1 xti=’m*n’
.ENDS SDIODE

You must define the values for all parameters used in this model in either
a .PARAM statement or the .SUBCKT call. Circuit simulation then replaces the
diode statements with the call to the SDIODE subcircuit; for example,
XDS 14 1048 SDIODE SIS=67.32 SCJA=67.32 SRS=1.2285E-2

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DC Operating Point Output of Diodes

DC Operating Point Output of Diodes

id: current across the diode.
vd: voltage across the diode.
req: equivalent resistance (1 / equivalent conductance).
cap: total diode capacitance.

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DC Operating Point Output of Diodes

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 4
JFET and MESFET Models
4

Describes how to use JFET and MESFET models in HSPICE circuit simulations.

HSPICE ships hundreds of examples for your use; see Listing of

Demonstration Input Files for paths to demo files.
Three JFET/MESFET DC model levels have been provided for IC circuit
simulation. These models use the same equations for gallium arsenide
MESFETs and silicon-based JFETs. This is possible because these models
include materials definition parameters. You can also use these models to
model indium phosphide MESFETs.

Overview of JFETs
JFETs form by diffusing a gate diode between the source and drain. MESFETs
form by applying a metal layer over the gate region, and creating a Schottky
diode. To control the flow of carriers, both technologies modulate the gate diode
depletion region. These field effect devices are called bulk semiconductors and
are in the same category as bipolar transistors. Compared to surface effect
devices such as MOSFETs, bulk semiconductors have higher gain, because
bulk semiconductor mobility is always higher than surface mobility.
Enhanced characteristics of JFETs and MESFETs, relative to surface effect
devices, include lower noise generation rates and higher immunity to radiation.
These advantages have created the need for newer and more advanced
models.
Features for JFET and MESFET modeling include:
■
Charge-conserving gate capacitors
■ Backgating substrate node

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Specifying a Model

■
Mobility degradation due to gate field
■
Computationally efficient DC model (Curtice and Statz)
■
Subthreshold equation
■
Physically correct width and length (ACM)
GaAs model LEVEL=3[1] assumes that GaAs device velocity saturates at very
low drain voltages. This model includes drain voltage induced threshold
modulation and user-selectable materials constants. These features let you use
the model for other materials, such as silicon, indium phosphide, and gallium
aluminum arsenide. The models that have been provided include a revised
Curtice model[2], and a TriQuint model (TOM) that extends the earlier Statz
model.

Specifying a Model
To specify a JFET or MESFET model, use a JFET element statement and a
JFET model statement. The model parameter LEVEL selects either the JFET or
MESFET model. LEVEL=1 and LEVEL=2 select the JFET, and LEVEL=3
selects the MESFET. Different submodels for the MESFET LEVEL=3 equations
are selected using the parameter SAT.

Bypassing Latent Devices (HSPICE Only)

Use the BYPASS (latency) option to decrease simulation time in large designs.
To speed simulation time, this option does not recalculate currents,
capacitances, and conductances, if the voltages at the terminal device nodes
have not changed. The BYPASS option applies to MOSFETs, MESFETs,
JFETs, BJTs, and diodes. Use .OPTION BYPASS to set BYPASS.
BYPASS might reduce simulation accuracy for tightly-coupled circuits such as
op-amps, high gain ring oscillators, and so on. Use .OPTION MBYPASS to set
MBYPASS to a smaller value for more accurate results.

Parameter Description

LEVEL=1 SPICE model

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Parameter Description

LEVEL=2 Modified SPICE model, gate modulation of LAMBDA

LEVEL=3 Hyperbolic tangent MESFET model (Curtice, Statz, Meta, TriQuint

Models)

SAT=0 Curtice model (Default)

SAT=1 Curtice model with user defined VGST exponent

SAT=2 Cubic approximation of Curtice model with gate field degradation (Statz
model)

SAT=3 HSPICE variable saturation model

The CAPOP model parameter selects the type of capacitor model:\

Parameter Description

CAPOP=0 SPICE depletion capacitor model

CAPOP=1 Charge conserving, symmetric capacitor model (Statz)

CAPOP=2 HSPICE improvements to CAPOP=1

You can use CAPOP=0, 1, 2 for any model level. CAPOP=1 and 2 are most often
used for the MESFET LEVEL=3 model.
The ACM model parameter selects the area calculation method:

JFET / MESFET Selection Parameters

Parameter Description

ACM=0 SPICE method (default)

ACM=1 Physically based method

Example 1
The following example selects the n channel MESFET model, LEVEL=3. It
uses the SAT, ALPHA, and CAPOP=1 parameter:

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J1 7 2 3 GAASFET
.MODEL GAASFET NJF LEVEL=3 CAPOP=1 SAT=1 VTO=-2.5
+ BETA=2.8E-3 LAMBDA=2.2M RS=70 RD=70 IS=1.7E-14
+ CGS=14P CGD=5P UCRIT=1.5 ALPHA=2

Example 2
The following example selects an n-channel JFET:
J2 7 1 4 JM1
.MODEL JM1 NJF (VTO=-1.5, BETA=5E-3, CGS=5P, CGD=1P,
+ CAPOP=1 ALPHA=2)

Example 3
The following example selects a p-channel JFET:
J3 8 3 5 JX
.MODEL JX PJF (VTO=-1.2, BETA=.179M, LAMBDA=2.2M
+ CGS=100P CGD=20P CAPOP=1 ALPHA=2)

Overview of Capacitor Model

The SPICE depletion capacitor model (CAPOP=0) uses a diode-like
capacitance between source and gate, where the depletion region thickness
(and therefore the capacitance) is determined by the gate-to-source voltage. A
similar diode model is often used to describe the normally much smaller gate-
to-drain capacitance.
These approximations have serious shortcomings such as:
■
Zero source-to-drain voltage: The symmetry of the FET physics gives the
conclusion that the gate-to-source and gate-to-drain capacitances should
be equal, but they can be very different.
■
Inverse-biased transistor: Where the drain acts like the source and the
source acts like the drain. According to the model, the large capacitance
should be between the original source and gate; but in this circumstance,
the large capacitance is between the original drain and gate.
When low source-to-drain voltages inverse biased transistors are involved,
large errors might be introduced into simulations. To overcome these
limitations, use the Statz charge-conserving model by selecting model
parameter CAPOP=1. The model selected by CAPOP=2 contains further
improvements.

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Model Applications
Use MESFETs to model GaAs transistors for high speed applications. Using
MESFET models, transimpedance amplifiers for fiber optic transmitters up to
50 GHz can be designed and simulated.

Control Option Description

DCAP Capacitance equation selector

GMIN, GRAMP, Conductance options: transient or DC analysis,

GMINDC DC auto-convergence

SCALM Model scaling option

Note: SCALM is ignored in Level 49 and higher.

DCCAP Invokes capacitance calculation in DC analysis

Table 28 JFET Options

Function Control Option

capacitance DCAP, DCCAP

conductance GMIN, GMINDC, GRAMP

scaling SCALM

To override a global depletion capacitance equation selection that uses

the .OPTION DCAP = <val> statement in a JFET or MESFET model, include
DCAP=<val> in the device’s .MODEL statement.

Convergence
Enhance convergence for JFET and MESFET by using the GEAR method of
computation (.OPTION METHOD = GEAR) when you include the transit time
model parameter. Use the GMIN, GMINDC, and GRAMP options to increase the
parasitic conductance value in parallel with pn junctions of the device.

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Capacitor Equations
The DCAP option selects the equation used to calculate the gate-to-source and
gate-to-drain capacitance for CAPOP=0. DCAP can be set to 1, 2 or 3. Default is
2.

JFET and MESFET Equivalent Circuits

Scaling
The AREA and M Element parameters, together with the SCALE and SCALM
control options, control scaling. For all three model levels, the model
parameters IS, CGD, CGS, RD, RS, BETA, LDEL, and WDEL, are scaled using the
same equations.
The SCALM option affects A, L, W, LDEL, and WDEL scaled parameters. SCALM
defaults to 1.0. For example, to enter the W parameter with micron units, set
SCALM to 1e-6 then enter W=5. The default setting is W=5e-6 meters or 5
microns.
To override global scaling that uses the .OPTION SCALM = <val> statement
in a JFET or MESFET model, include SCALM=<val> in the .MODEL statement.

JFET Current Conventions

Figure 16 on page 115 assumes the direction of current flow through the JFET.
You can use either I(Jxxx) or I1(Jxxx) syntax when printing the drain
current. I2 references the gate current and I3 references the source current.
Jxxx is the device name. Figure 16 on page 115 represents the current
convention for an n channel JFET.

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nd
(drain node)
I1 (Jxxx)
ng
(gate node) nb
I2 (Jxxx) (bulk node)

ns
(source node)
I3 (Jxxx)

Figure 16 JFET Current Convention, N-Channel

For a p-channel device, the following must be reversed:

■
Polarities of the terminal voltages vgd, vgs, and vds
■
Direction of the two gate junctions
■
Direction of the nonlinear current source id

JFET Equivalent Circuits

Circuit simulation uses three equivalent circuits to analyze JFETs: transient,
AC, and noise circuits. The components of these circuits form the basis for all
element and model equation discussion.
The fundamental component in the equivalent circuit is the drain to source
current (ids). For noise and AC analyses, the actual ids current is not used.
Instead, the partial derivatives of ids with respect to the terminal voltages, vgs,
and vds are used.
The names for these partial derivatives are:

Transconductance
∂( ids )
gm = ----------------
∂( vgs ) vds = const.

Output Conductance
∂( ids )
gds = ----------------
∂( vds ) vgs = const.

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The ids equation accounts for all DC currents of the JFET. Gate capacitances
are assumed to account for transient currents of the JFET equations. The two
diodes shown in Figure 17 are modeled by these ideal diode equations:
vgd
---------------
igd = ISeff ⋅ ⎛ e N ⋅ vt – 1⎞
⎝ ⎠

vgd > – 10 ⋅ N ⋅ vt
igd = – ISeff
vgd ≤– 10 ⋅ N ⋅ vt
vgs
---------------
igs = ISeff ⋅ ⎛ e N ⋅ vt – 1⎞
⎝ ⎠

vgs > – 10 ⋅ N ⋅ vt
igs = – ISeff
vgs ≤– 10 ⋅ N ⋅ vt

Gate

+ +
igs vgs cgs vgd igd
Source rs - cgd - rd Drain

ids

Figure 17 JFET/MESFET Transient Analysis

Note: For DC analysis, the capacitances are not part of the model.

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Gate

ggs cgs cgd ggd

Source rs rd Drain

gm(vgs vbs)

gds

Figure 18 JFET/MESFET AC Analysis

Gate

ggs cgs cgd ggd

Source rs rd Drain

gm(vgs vbs)

inrs gds inrd

ind

Figure 19 JFET/MESFET AC Noise Analysis

Table 29 Equation Variable Names and Constants

Variable/
Quantity Definitions

cgd Gate to drain capacitance

cgs Gate to source capacitance

ggd Gate to drain AC conductance

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Table 29 Equation Variable Names and Constants (Continued)

Variable/
Quantity Definitions

ggs Gate to source AC conductance

gds Drain to source AC conductance controlled by vds

gm Drain to source AC transconductance controlled by vgs

igd Gate to drain current

igs Gate to source current

ids DC drain to source current

ind Equivalent noise current drain to source

inrd Equivalent noise current drain resistor

inrs Equivalent noise current source resistor

rd Drain resistance

rs Source resistance

vgd Internal gate-drain voltage

vgs Internal gate-source voltage

f Frequency

εo Vacuum permittivity = 8.854e-12 F/m

k 1.38062e-23 (Boltzmann’s constant)

q 1.60212e-19 (electron charge)

t Temperature in ° K

Dt t - tnom

tnom Nominal temperature of parameter measurements in ° K (user-input in

° C). Tnom = 273.15 + TNOM

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Table 29 Equation Variable Names and Constants (Continued)

Variable/
Quantity Definitions

vt(t) k ⋅ t/q

vt(tnom) k ⋅ tnom/q

Table 30 JFET DC Operating Point Output

Quantities Definitions

ids D-S current

igs G-S current

igd G-D current

vgs G-S voltage

vds D-S voltage

gm transconductance

gmbs drain-body (backgate) transconductance

gds Drain-source transconductance

cgs G-S capacitance

cgd G-D capacitance

JFET and MESFET Model Statements

You can use the .MODEL statement to include a JFET or MESFET model in
your HSPICE netlist. For a general description of the .MODEL statement, see
the HSPICE and HSPICE RF Command Reference.

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Syntax
.MODEL <mname> NJF <LEVEL=val> <pname1=val1> ...
.MODEL mname PJF <LEVEL=val> <pname1=val1> ...

Parameter Description

mname Model name. Elements refer to the model by this name.

NJF Identifies an N-channel JFET or MESFET model.

LEVEL Selects different DC model equations.

pname1=val1 Each JFET or MESFET model can include several model

parameters.

PJF Identifies a P-channel JFET or MESFET model.

JFET and MESFET Model Parameters

DC characteristics are defined by the model parameters VTO and BETA. These
parameters determine the variation of drain current with gate voltage. LAMBDA
determines the output conductance, and IS, the saturation current of the two
gate junctions. Two ohmic resistances, RD and RS, are included. The charge
storage is modeled by nonlinear depletion-layer capacitances for both gate
junctions that vary as the -M power of junction voltage, and are defined by the
parameters CGS, CGD, and PB.
KF and AF parameters model noise, which is also a function of the series
source and drain resistances (RS and RD) in addition to temperature. Use the
parameters ALPHA and A to model MESFETs.
The AREA model parameter is common to both element and model parameters.
The AREA element parameter always overrides the AREA model parameter.
Table 31 JFET and MESFET Model Parameters

Model Parameters Common to All Levels

Geometric ACM, ALIGN, AREA, HDIF, L, LDEL, LDIF, RD, RG, RS, RSH,
RSHG, RSHL, W, WDEL

Capacitance CAPOP, CGD, CGS, FC, M, PB, TT

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Table 31 JFET and MESFET Model Parameters (Continued)

Model Parameters Common to All Levels

Subthreshold ND, NG

Noise AF, KF

LEVEL=1 Model Parameters (JFET)

DC BETA, IS, LAMBDA, N, VTO

LEVEL=2 Model Parameters (JFET)

DC BETA, IS, LAMBDA, LAM1, N, VTO

LEVEL=3 Model Parameters (MESFET)

DC ALPHA, BETA, D, GAMDS, IS, N, K1, LAMBDA, NCHAN, SAT,

SATEXP, UCRIT, VBI, VGEXP, VP, VTO

The following tables provide information about:

■ Gate Diode DC Parameters (Table 32)
■
Gate Capacitance LEVEL=1, 2, and 3 Parameters (Table 33
■
DC Model LEVEL=1 Parameters (Table 34
■ DC Model LEVEL=2 Parameters (Table 35
■
DC Model LEVEL=3 Parameters (Table 36

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Table 32 provides information about gate diode DC parameters.

Table 32 Gate Diode DC Parameters

Name
(Alias) Units Default Description

ACM Area calculation method. Use this parameter to

select between traditional SPICE unitless gate
area calculations and the newer style of area
calculations (see the ACM section). If W and L are
specified, AREA becomes:

ACM=0 AREA=Weff/Leff
ACM=1 AREA=Weff ⋅ Leff

ALIGN m 0 Misalignment of gate

AREA Default area multiplier. This parameter affects the

BETA, RD, RS, IS, CGS, and CGD model
parameters.

AREAeff=M ⋅ AREA

Override this parameter using the element

effective area.

HDIF m 0 Distance of the heavily diffused or low resistance

region from source or drain contact to lightly doped
region

IS amp 1.0e-14 Gate junction saturation current

ISeff = IS ⋅ AREAeff

L m 0.0 Default length of FET. Override this parameter

using the element L.

Leff = L ⋅ SCALM + LDELeff

LDEL m 0.0 Difference between drawn and actual or optical

device length

LDELeff = LDEL ⋅ SCALM

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Table 32 Gate Diode DC Parameters (Continued)

Name
(Alias) Units Default Description

LDIF m 0 Distance of the lightly doped region from heavily

doped region to transistor edge

N 1.0 Emission coefficient for gate-drain and gate-source

diodes

RD ohm 0.0 Drain ohmic resistance (see the ACM section)

RDeff = RD /AREAeff , ACM=0

RG ohm 0.0 Gate resistance (see the ACM section)

RGeff = RG ⋅ AREAeff , ACM=0

RS ohm 0.0 Source ohmic resistance (see the ACM section)

RSeff = RS/AREAeff , ACM=0

RSH ohm/sq 0 Heavily doped region, sheet resistance

RSHG ohm/sq 0 Gate sheet resistance

RSHL ohm/sq 0 Lightly doped region, sheet resistance

W m 0.0 Default FET width. The We element overrides this

parameter.

Weff = W ⋅ SCALM + WDELeff

WDEL m 0.0 Difference between drawn and actual or optical

device width

WDELeff = WDEL ⋅ SCALM

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Table 33 provides information about gate capacitance level 1, 2, and 3

parameters.
Table 33 Gate Capacitance LEVEL=1, 2, and 3 Parameters

Name
(Alias) Units Default Description

CAPOP 0.0 Capacitor model selector:

■
CAPOP=0 – default capacitance equation
based on diode depletion layer
■
CAPOP=1 – symmetric capacitance
equations (Statz)
■
CAPOP=2 – HSPICE improvement to
CAPOP=1

CALPHA ALPHA Saturation factor for capacitance model

(CAPOP=2 only)

CAPDS F 0 Drain to source capacitance for TriQuint model

CAPDSeff=CAPDS ⋅ Weff
------------ ⋅ M
Leff

CGAMDS GAMDS Threshold lowering factor for capacitance

(CAPOP=2 only)

CGD F 0.0 Zero-bias gate-drain junction capacitance

CGDeff = CGD ⋅ AREAeff Override this

parameter by specifying GCAP.

CGS F 0.0 Zero-bias gate-source junction capacitance

CGSeff = CGS ⋅ AREAeff Override this

parameter by specifying GCAP

CRAT 0.666 Source fraction of gate capacitance (used with

GCAP)

GCAP F Zero-bias gate capacitance. If specified,

CGSeff = GCAP ⋅ CRAT ⋅ AREAeff

CGDeff = GCAP ⋅ (1-CRAT) ⋅ AREAeff

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Table 33 Gate Capacitance LEVEL=1, 2, and 3 Parameters (Continued)

Name
(Alias) Units Default Description

FC 0.5 Coefficient for forward-bias depletion

capacitance formulas (CAPOP=0 and 2 only)

CVTO VTO Threshold voltage for capacitance model

(CAPOP=2 only)

M (MJ) 0.50 Grading coefficient for gate-drain and gate-

source diodes (CAPOP=0 and 2 only)

0.50 - step junction

0.33 - linear graded junction

PB V 0.8 Gate junction potential

TT s 0 Transit time – use option METHOD=GEAR

when using transit time for JFET and MESFET

Note: Many DC parameters (such as VTO, GAMDS, ALPHA) might also

affect capacitance.
Table 34 provides information about DC model LEVEL=1
parameters.
Table 34 DC Model LEVEL=1 Parameters

Name
(Alias) Units Default Description

LEVEL 1.0 LEVEL=1 invokes the SPICE JFET model

BETA amp/ 1.0e-4 Transconductance parameter,

V2 ⋅ M-
gain BETAeff = BETA ⋅ Weff
-----------------------
Leff

LAMBDA 1/V 0.0 Channel length modulation parameter

ND 1/V 0.0 Drain subthreshold factor (typical value=1)

NG 0.0 Gate subthreshold factor (typical value=1)

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Table 34 DC Model LEVEL=1 Parameters (Continued)

Name
(Alias) Units Default Description

VTO V -2.0 Threshold voltage. If set, it overrides the internal

calculation. A negative VTO is a depletion
transistor, regardless of NJF or PJF. A positive VTO
is always an enhancement transistor.

Table 35 provides information about DC model LEVEL=2 parameters.

Table 35 DC Model LEVEL=2 Parameters

Name
(Alias) Units Default Description

LEVEL 1.0 Level of FET DC model. LEVEL=2 is a modification

of the SPICE model for gate modulation of
LAMBDA.

BETA amp / 1.0e-4 Transconductance parameter,

V2 ⋅ M-
gain BETAeff = BETA ⋅ Weff
-----------------------
Leff

LAMBDA 1/V 0.0 Channel length modulation parameter

LAM1 1/V 0.0 Channel length modulation gate voltage parameter

ND 1/V 0.0 Drain subthreshold factor (typical value=1)

NG 0.0 Gate subthreshold factor (typical value=1)

VTO V -2.0 Threshold voltage. When set, VTO overrides the

internal calculation. A negative VTO is a depletion
transistor, regardless of NJF or PJF. A positive VTO
is always an enhancement transistor.

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Table 36 provides information about DC model level 3 parameters.

Table 36 DC Model LEVEL=3 Parameters

Name Description
(Alias) Units Default

LEVEL 1.0 Level of FET DC model. LEVEL=3 is the Curtice

MESFET model.

A m 0.5m Active layer thickness: Aeff = A ⋅ SCALM

ALPHA 1/V 2.0 Saturation factor

BETA amp /V 1.0e-4 Transconductance parameter,

⋅ M-
2 gain BETAeff = BETA ⋅ Weff
-----------------------
Leff

D 11.7 Semiconductor dielectric constant: Si=11.7,

GaAs=10.9

DELTA 0 Ids feedback parameter of TriQuint model

GAMDS 0 Drain voltage, induced threshold voltage lowering

(GAMMA) coefficient

LAMBDA 1/V 0.0 Channel length modulation parameter

K1 V1/2 0.0 Threshold voltage sensitivity to bulk node

NCHAN atom/ 1.552e1 Effective dopant concentration in the channel

cm3 6

ND 1/V 0.0 Drain subthreshold factor

NG 0.0 Gate subthreshold factor (typical value=1)

SAT 0.0 Saturation factor

■ SAT=0 (standard Curtice model)
■
SAT= (Curtice model with hyperbolic tangent
coefficient)
■
SAT=2 (cubic approximation of Curtice model
(Statz))

SATEXP 3 Drain voltage exponent

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Table 36 DC Model LEVEL=3 Parameters (Continued)

Name Description
(Alias) Units Default

UCRIT V/cm 0 Critical field for mobility degradation

VBI 1.0 Gate diode built-in voltage

VGEXP (Q) 2.0 Gate voltage exponent

VP Dinch-off voltage (default is calculated)

VTO V -2.0 Threshold voltage. If set, it overrides internal

calculation. A negative VTO is a depletion
transistor regardless of NJF or PJF. A positive VTO
is always an enhancement transistor.

ACM (Area Calculation Method) Parameter Equations

Use the ACM model parameter to select between traditional SPICE unitless
gate area calculations and the newer style of area calculations.
■ The ACM=0 method (SPICE) uses the ratio of W/L to keep AREA unitless.
■
The ACM=1 (HSPICE) model requires that parameters (such as IS, CGS,
CGD, and BETA) have proper physics-based units.
In the following equations, m indicates the element multiplier.
ACM=0
SPICE model, parameters determined by element areas.
Weff
AREAeff = ------------ ⋅ m
Leff
RD
RDeff = ----------------------
AREAeff
RS
RSeff = ----------------------
AREAeff
AREAeff
RGeff = RG ⋅ ----------------------
m2

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ACM=1
ASPEC model, parameters function of element width.
AREAeff = Weff ⋅ Leff ⋅ m
RD
RDeff = --------
m
Or, if RD=0:
HDIF LDIF + ALIGN
RDeff = RSH ⋅ ----------------------- + RSHL ⋅ ---------------------------------------
Weff ⋅ m Weff ⋅ m
RG
RGeff = --------
m
Or, if RG=0:
Weff
RGeff = RSHG ⋅ ----------------------
Leff ⋅ m
RS
RSeff = -------
m
Or, if RS=0:
HDIF LDIF – ALIGN
RSeff = RSH ⋅ ----------------------- + RSHL ⋅ ---------------------------------------
Weff ⋅ m Weff ⋅ m
ACM=2
HSPICE model, combination of ACM=0,1 and provisions for lightly doped drain
technology.
ACM=3
Extends ACM=2 model to deal with stacked devices (shared source/drains) and
source/drain periphery capacitance along a gate edge.
Resulting calculations:
ISeff = IS ⋅ AREAeff
CGSeff = CGS ⋅ AREAeff
CGDeff = CGD ⋅ AREAeff
Weff
BETAeff = BETA ⋅ ------------ ⋅ m
Leff

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Note: The model parameter units for IS, CGS, and CGD are unitless in
ACM=0 and per square meter for ACM=1.

Example
j1 10 20 0 40 nj_acm0 w=10u l=1u
j2a 10 20 0 41 nj_acm1 w=10u l=1u

.model nj_acm0 njf Level=3 capop=1 sat=3 acm=0

+ is=1e-14 cgs=1e-15 cgd=.3e-15
$$$note different units for is,cgs,cgd
+ rs=100 rd=100 rg=5 beta=5e-4
+ vto=.3 n=1 ng=1.4 nd=1
+ k1=.2 vgexp=2 alpha=4 ucrit=1e-4 lambda=.1
+ satexp=2
+ eg=1.5 gap1=5e-4 gap2=200 d=13

.model nj_acm1 njf Level=3 capop=1 sat=3 acm=1

+ is=1e-2 cgs=1e-3 cgd=.3e-3
$$$note different units for is,cgs,cgd
+ rs=100 rd=100 rg=5 beta=5e-4
+ vto=.3 n=1 ng=1.4 nd=1
+ k1=.2 vgexp=2 alpha=4 ucrit=1e-4 lambda=.1
+ satexp=2
+ eg=1.5 gap1=5e-4 gap2=200 d=13

JFET and MESFET Capacitances

Gate Capacitance CAPOP=0

The DCAP option switch selects the diode forward bias capacitance equation:
DCAP=1
Reverse Bias:
vgd < FC ⋅ PB

vgd –M
cgd = CGDeff ⋅ ⎛ 1 – ---------⎞
⎝ PB ⎠
vgs < FC ⋅ PB

vgs – M
cgs = CGSeff ⋅ ⎛ 1 – --------⎞
⎝ PB ⎠

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Forward Bias:
vgd >= FC ⋅ PB
vgd
1 – FC ⇒1 ( + M ) + M ⋅ ---------
∂ igd PB
cgd = TT ⋅ ------------ + CGDeff ⋅ ----------------------------------------------------------------------
∂vgd ( 1 – FC ) M + 1
vgs >= FC ⋅ PB
vgs
1 – FC ⇒1 ( + M ) + M ⋅ --------
∂igs PB
cgs = TT ⋅ ----------- + CGSeff ⋅ ---------------------------------------------------------------------
-
∂vgs ( 1 – FC ) M + 1

DCAP=2 (Default)
Reverse Bias:
vgd < 0

vgd –M
cgd = CGDeff ⋅ ⎛⎝ 1 – ---------⎞⎠
PB
vgs < 0
vgs – M
cgs = CGSeff ⋅ ⎛ 1 – --------⎞
⎝ PB ⎠
Forward Bias:

vgd ≥ 0

∂igd vgd
cgd = TT ⋅ ------------ + CGDeff ⋅ ⎛⎝ 1 + M ⋅ ---------⎞⎠
∂vgd PB

vgs ≥ 0

∂igs vgs
cgs = TT ⋅ ----------- + CGSeff ⋅ ⎛ 1 + M ⋅ --------⎞
∂vgs ⎝ PB ⎠
DCAP=3
Limits peak depletion capacitance to FC ⋅ CGDeff or FC ⋅ CGSeff with proper
fall-off when forward bias exceeds PB (FC > 1).

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Gate Capacitance CAPOP=1

Gate capacitance CAPOP=1 is a charge conserving symmetric capacitor model
most often used for MESFET model LEVEL=3.

CGS veff – vte vds

Cgs = ------------------------------ ⋅ 1 + -------------------------------------------------------- ⋅ 1 + --------------------------------------------------
vnew ( veff – vte ) 2 + ( 0.2 )
2 2
vds 2 + ⎛ --------------------⎞
4 1 – ------------- 1
PB ⎝ ALPHA⎠

⎛ ⎞
CGD ⎜ vds ⎟
------------- ⋅ ⎜ 1 – --------------------------------------------------⎟
2 ⎜ 2⎟
vds + ⎛ --------------------⎞ ⎠
2 1
⎝ ⎝ ALPHA⎠

⎛ ⎞
⎜ vds ⎟
CGS veff – vte
Cgd = ⎜ ------------------------------ ⋅ 1 + -------------------------------------------------------- ⋅ 1 – -------------------------------------------------- ⎟+
⎜ vnew 2 2 2 ⎟
vds + ⎛ --------------------⎞
⎜ 4 1 – ------------- ( veff – vte ) + ( 0.2 ) 2 1 ⎟
⎝ PB ⎝ ALPHA⎠ ⎠

⎛ ⎞
⎜ ⎟
⎜ CGD
------------- ⋅ vds
1 + -------------------------------------------------- ⎟
⎜ 2 2 ⎟
vds + ⎛ --------------------⎞ ⎟
⎜ 2 1
⎝ ⎝ ALPHA⎠ ⎠

The following equations calculate values for the preceding equations:

vte = VTO + GAMDS ⋅ vds + K1 ( vbs ) = effective threshold
2
veff = --- vgs + vgd + vds + ⎛ --------------------⎞
1 2 1
2 ⎝ ALPHA⎠

1 2 2
vnew = --- [ veff + vte + ( veff – vte ) + ( 0.2 ) ]
2
CGD = High -vds Cgd at vgs = 0
CGS = High -vds Cgs at vgs = 0
CGD - CGDeff
CGS - CGSeff

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Gate Capacitance CAPOP=2

Statz capacitance equations[3] (CAPOP=1) contain mathematical behavior that
might be problematic when trying to fit data.
■
For vgs below the threshold voltage and Vds>0 (normal bias condition),
Cgd is greater than Cgs and rises with Vds, while Cgs drops with Vds.
■
Cgd properly goes to a small constant representing a sidewall capacitance.
However, as Vgs decreases, the Cgs curve drops along an asymptote line
to zero.
■
(For the behavior for Vds<0, interchange Cgs and Cgd and replace Vds with
-Vds in the preceding descriptions.)
■
It may be difficult to simultaneously fit the DC characteristics and the gate
capacitances (measured by S-parameters) with the parameters that are
shared between the DC model and the capacitance model.
■
The capacitance model in the CAPOP=1 implementation also lacks a
junction grading coefficient and an adjustable width for the Vgs transition to
the threshold voltage. The width is fixed at 0.2.
■
Finally, an internal parameter for limiting forward gate voltage is set to
0.8 ⋅ PB in the CAPOP=1 implementation. This is not always consistent with
a good fit.
CAPOP=2 capacitance equations help to solve the previously-described
problems.

Parameter Default Description

CALPHA ALPHA Saturation factor for capacitance model

CGAMDS GAMDS Threshold lowering factor for capacitance

CVTO VTO Threshold voltage for capacitance model

FC 0.5 PB multiplier – typical value 0.9 gate diode limiting

voltage=FC ⋅ PB.

M (MJ) 0.5 Junction grading coefficient

VDEL 0.2 Transition width for Vgs

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Capacitance Comparison (CAPOP=1 and CAPOP=2)

Figure 20 and Figure 21 on page 135 show comparisons of CAPOP=1 and
CAPOP=2. In Figure 20 on page 134, below the (-0.6 v) threshold, Cgs for
CAPOP=2 drops towards the same value as Cgd, while for CAPOP=1, CGS →0.

Figure 20 CAPOP=1 vs. CAPOP=2. Cgs, Cgd vs. Vgs for Vds=0, 1, 2, 3, 4

In Figure 21 on page 135, the Cgs-Cgd characteristic curve “flips over” below
the threshold for CAPOP=1, whereas for CAPOP=2, it is does not.

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JFET and MESFET DC Equations

Figure 21 CAPOP=1 vs. CAPOP=2. Cgs, Cgd vs. Vds for Vgs=-1.5, -1.0, -0.5, 0

JFET and MESFET DC Equations

DC Model LEVEL=1
JFET DC characteristics are represented by the nonlinear current source
(ids). The value of ids is determined by the equations:
vgst = vgs – VTO
vgst< 0 Channel pinched off
ids = 0
0<vgst<vds Saturated region
ids = BETAeff ⋅ vgst 2 ⋅ ( 1 + LAMBDA ⋅ vds )
0<vds<vgst Linear region

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ids = BETAeff ⋅ vds ⋅ ( 2 ⋅ vgst – vds ) ⋅ ( 1 + LAMBDA ⋅ vds )

The drain current at zero vgs bias (ids) is related to VTO and BETA by the
equation:
idss = BETAeff ⋅ VTO 2
At a given vgs, LAMBDA may be determined from a pair of drain current and
drain voltage points measured in the saturation region where vgst<vds:

LAMBDA = ⎛⎝ -----------------------------------------------------------------⎞⎠
ids2 – ids1
ids1 ⋅ vds2 – ids2 Þvds1

DC Model LEVEL=2
The DC characteristics of the JFET LEVEL=2 model are represented by the
nonlinear current source (ids). The value of ids is determined by the
equations:
vgst = vgs – VTO
vgst<0 Channel pinched off
ids = 0
0<vgst<vds, vgs<0 Saturated region, forward bias
ids = BETAeff ⋅ vgst 2 ⋅ [ 1 + LAMBDA ⋅ ( vds – vgst ) ⋅ ( 1 + LAM1 ⋅ vgs ) ]
0<vgst<vds, vgs<0 Saturated region, reverse bias

vgst
ids = BETAeff ⋅ vgst 2 ⋅ 1 – LAMBDA ⇒vds
( – vgst ) ⇒------------
VTO
0<vds<vgst Linear region
ids = BETAeff ⋅ vds ( 2 ⋅ vgst – vds )

DC Model LEVEL=3
The DC characteristics of the MESFET LEVEL=3 model are represented by the
nonlinear hyperbolic tangent current source (ids). The value of ids is
determined by the equations:
vds>0 Forward region

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JFET and MESFET DC Equations

If model parameters VP and VTO are not specified they are calculated as:
q ⋅ NCHAN ⋅ Aeff 2
VP = – ----------------------------------------------------
2 ⋅ D ⋅ εo

VTO = VP + VBI
then:
vgst = vgs – [ VTO + GAMDS ⋅ vds + K1 ( vbs ) ]
BETAeff
beteff = ---------------------------------------------------
( 1 + UCRIT ⋅ vgst )
vgst<0 Channel pinched off
ids = idsubthreshold ( N0, ND, vds, vgs )
vgst>0, SAT=0 On region
ids = beteff ⋅ ( vgst VGEXP ) ⋅ ( 1 + LAMBDA ⋅ vds ) ⋅ tanh ( ALPHA ⋅ vds )
idsubthreshold ( N0, ND, vds, vgs )
vgst>0, SAT=1 On region

ids = beteff ⋅ ( vgst VGEXP ) ⋅ ( 1 + LAMBDA ⋅ vds ) ⋅ tanh ⎛ ALPHA ⋅ ----------⎞

vds
⎝ vgst⎠

idsubthreshold ( N0, ND, vds, vgs )

vgst>0, SAT=2, vds<3/ALPHA On region

vds 3
ids = beteff ⋅ vgst 2 ⋅ ( 1 + LAMBDA ⋅ vds ) ⋅ 1 – ⎛ 1 – ALPHA ⇒--------⎞
⎝ 3 ⎠

idsubthreshold ( N0, ND, vds, vgs )

vgst>0, SAT=2, vds>3/ALPHA On region
( ids = beteff ⋅ vgst 2 ⋅ ( 1 + LAMBDA ⋅ vds ) ) + idsubthreshold ( N0, ND, vds, vgs )
If vgst >0, SAT=3 is the same as SAT=2, except exponent 3 and denominator 3
are parameterized as SATEXP, and exponent 2 of vgst is parameterized as
VGEXP.

Note: idsubthreshold is a special function that calculates the

subthreshold currents from the N0 and ND model parameters

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JFET and MESFET Noise Models

JFET and MESFET Noise Models

Name
(Alias) Default Description

AF 1.0 Flicker noise exponent

KF 0.0 Flicker noise coefficient. Reasonable values for KF are in

the range 1e-19 to 1e-25 V2 F.

NLEV 2.0 Noise equation selector

GDSNOI 1.0 Channel noise coefficient. Use with NLEV=3.

Noise Equations
Figure 19 on page 117 shows the JFET noise model. Thermal noise generation
in the drain and source regions (RD and RS resistances) is modeled by the two
current sources, inrd and inrs. The inrd and inrs units are:

4 ⋅ k ⋅ t 1⁄ 2
inrd = ⎛ ---------------------⎞
⎝ rd ⎠

4⋅ k ⋅ t 1⁄ 2
inrs = ⎛ ---------------------⎞
⎝ rs ⎠

Channel thermal and flicker noise are modeled by the current source ind and
defined by the equation:
ind = channelthermalnoise + flickernoise
If the model parameter NLEV is less than 3, then:

8 ⋅ k ⋅ t ⋅ gm 1 ⁄ 2
channelthermalnoise = ⎛⎝ ------------------------------------⎞⎠
3
The previous formula, used in both saturation and linear regions, might lead to
wrong results in the linear region. For example, at VDS=0, channel thermal
noise is 0, because gm=0. This is physically impossible. If you set the NLEV
parameter to 3, simulation uses an equation that is valid in both linear and
saturation regions.[4]

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JFET and MESFET Noise Models

For NLEV = 3
2
channelthermalnoise = ⎛ -------- ⋅ BETAeff ⋅ ( vgs – VTO ) ⋅ ------------------------ ⋅ GDSNOI⎞
8kt 1+a+a
⎝ 3 a ⎠
The following equations calculate values for the preceding equation:
vds
α = 1 – --------------------------
vgs – VTO
Linear region
α = 0
Saturation region
The flicker noise is calculated as:
AF 1 ⁄ 2
KF ⋅ ids
flickernoise = ⎛ -----------------------------⎞
⎝ f ⎠

Parameter Description

RD, V2/HZ output thermal noise due to drain resistor

RS, V2/HZ output thermal noise due to source resistor

RG, V2/HZ output thermal noise due to gate resistor

ID, V2/HZ output thermal noise due to channel

FN, V2/HZ output flicker noise

TOT, V2/HZ total output noise (TOT = RD + RS + RG + ID + FN)

ONOISE output noise

INOISE input noise

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JFET and MESFET Temperature Equations

JFET and MESFET Temperature Equations

Table 37 lists temperature effect parameters. The temperature effect
parameters apply to Levels 1, 2, and 3. They include temperature parameters
for the effect of temperature on resistance, capacitance, energy gap, and a
number of other model parameters. The temperature equation selectors, TLEV
and TLEVC, select different temperature equations for the calculation of energy
gap, saturation current, and gate capacitance. TLEV is either 0, 1, or 2 while
TLEVC is either 0, 1, 2, or 3.
Table 37 Temperature Parameters (Levels 1, 2, and 3)

Function Parameter

capacitance CTD, CTS

DC M, TCV, XTI

energy gap EG, GAP1, GAP2

equation selections TLEV, TLEVC

grading M

mobility BEX

resistance TRD, TRS

Table 38 Temperature Effect Parameters

Name (Alias) Units Default Description

BETATCE 1/× 0.0 Beta temperature coefficient for TriQuint model

BEX 0.0 Mobility temperature exponent, correction for low field

mobility

CTD 1/× 0.0 Temperature coefficient for gate-drain junction

capacitance. TLEVC=1 enables CTD to override the
default temperature compensation.

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Table 38 Temperature Effect Parameters (Continued)

Name (Alias) Units Default Description

CTS 1/× 0.0 Temperature coefficient for gate-source junction

capacitance. TLEVC=1 enables CTS to override the
default temperature compensation.

EG eV 1.16 Energy gap for the gate to drain and gate to source
diodes at 0 ° K
■
1.17 - silicon
■
0.69 - Schottky barrier diode
■
0.67 - germanium
■ 1.52 - gallium arsenide

GAP1 eV/× 7.02e-4 First bandgap correction factor, from Sze, alpha term
■
7.02e-4 - silicon
■
4.73e-4 - silicon
■ 4.56e-4 - germanium
■
5.41e-4 - gallium arsenide

GAP2 x 1108 Second bandgap correction factor, from Sze, beta term
■
1108 - silicon
■ 636 - silicon
■
210 - germanium
■ 204 - gallium arsenide

M (MJ) 0.50 Grading coefficient for gate-drain and gate-source diodes

■ 0.50 - step junction
■
0.33 - linear graded junction

N 1.0 Emission coefficient for gate-drain and gate-source

diodes

TCV (VTOTC) 1/× 0.0 Temperature compensation coefficient for VTO (threshold
voltage)

TLEV 0.0 Temperature equation selector for junction diodes.

Interacts with the TLEVC parameter.

TLEVC 0.0 Temperature equation selector for junction capacitances

and potential. Interacts with the TLEV parameter.

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Table 38 Temperature Effect Parameters (Continued)

Name (Alias) Units Default Description

TPB V/× 0.0 Temperature coefficient for PB. TLEVC=1 or 2 overrides

the default temperature compensation.

TRD (TDR1) 1/× 0.0 Temperature coefficient for drain resistance

TRG (TRG1) 1/× 0 Temperature coefficient for gate resistance

TRS (TRS1) 1/× 0.0 Temperature coefficient for source resistance

XTI 0.0 Saturation current temperature exponent

XTI=3 for silicon diffused junction

or

XTI=2 for Schottky barrier diode

Temperature Compensation Equations

The following subsections described various types of temperature equations for
JFET/MESFET models.

Energy Gap Temperature Equations

To determine energy gap for temperature compensation, use the equations
shown:
TLEV = 0 or 1
tnom 2
egnom = 1.16 – 7.02e-4 ⋅ -----------------------------------
tnom + 1108.0

t2
eg ( t ) = 1.16 – 7.02e-4 ⋅ ------------------------
t + 1108.0
TLEV = 2
tnom 2
egnom = EG – GAP1 ⋅ -----------------------------------
tnom + GAP2

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t2
eg ( t ) = EG – GAP1 ⋅ -----------------------
t + GAP2

Saturation Current Temperature Equations

The saturation current of the gate junctions of the JFET varies with temperature
according to the equation:
facln
-------------
is ( t ) = IS ⋅ e N

TLEV = 0 or 1

facln = ---------------------- – ----------- + XTI ⋅ ln ⎛⎝ -------------⎞⎠

EG EG t
vt ( tnom ) vt ( t ) tnom
TLEV = 2
eg ( t )
facln = ---------------------- – ------------ + XTI ⋅ ln ⎛⎝ -------------⎞⎠
egnom t
vt ( tnom ) vt ( t ) tnom

Gate Capacitance Temperature Equations

Temperature equations calculate the gate capacitances. The CTS and CTD
parameters are the linear coefficients. If you set TLEVC to zero, simulation uses
these equations. To achieve a zero capacitance variation, set the coefficients to
a very small value (such as 1e-6), and set TLEVC=1 or 2.
TLEVC = 0
PB ( t )
CGS ( t ) = CGS ⋅ 1 + M ⋅ ⎛⎝ 4.0e-4 ⋅ Δt – -------------- + 1⎞⎠
PB

PB ( t )
CGD ( t ) = CGD ⋅ 1 + M ⋅ ⎛ 4.0e-4 ⋅ Δt – -------------- + 1⎞
⎝ PB ⎠

The next equation calculates values for the preceding equations:

eg ( t )
PB ( t ) = PB ⋅ ⎛⎝ -------------⎞⎠ – vt ( t ) ⇒ 3ln ⎛⎝ -------------⎞⎠ + ---------------------- – ------------
t t egnom
tnom tnom vt ( tnom ) vt ( t )
TLEVC = 1
CGS ( t ) = CGS ⋅ ( 1 + CTS ⋅ Δt )
CGD ( t ) = CGD ⋅ ( 1 + CTD ⋅ Δt )

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The next equation calculates values for the preceding equations:

PB ( t ) = PB – TPB ⇒Δt
TLEVC = 2
PB M
CGS ( t ) = CGS ⋅ ⎛ --------------⎞
⎝ PB ( t )⎠

PB M
CGD ( t ) = CGD ⋅ ⎛ --------------⎞
⎝ PB ( t )⎠

The next equation calculates values for the preceding equations:

PB ( t ) = PB – TPB ⇒Δt
TLEVC = 3
Δt
CGS ( t ) = CGS ⋅ ⎛⎝ 1 – 0.5 ⇒dpbdt ⇒-------⎞⎠
PB

Δt
CGD ( t ) = CGD ⋅ ⎛ 1 – 0.5 ⇒dpbdt ⇒-------⎞
⎝ PB⎠
The next equation calculates values for the preceding equations:
PB ( t ) = PB + dpbdt ⋅ Δt
TLEV = 0 or 1
– egnom + 3 ⋅ vt ( tnom ) + ( 1.16 – egnom ) ⋅ ⎛⎝ 2 – -------------------------------⎞⎠ – PB
tnom
tnom + 1108
dpbdt = ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom

TLEV = 2
– egnom + 3 ⋅ vt ( tnom ) + ( EG – egnom ) ⋅ ⎛ 2 – -----------------------------------⎞ – PB
tnom
⎝ tnom + GAP2⎠
dpbdt = -----------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom

Threshold Voltage Temperature Equation

The threshold voltage of the JFET varies with temperature according to the
equation:
VTO ( t ) = VTO – TCV ⇒Δt
CVTO ( t ) = CVTO – TCV ⋅ Δt

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TriQuint (TOM) Extensions to LEVEL=3

Mobility Temperature Equation

The mobility temperature compensation equation is updated as:

t BEX
BETA ( t ) = BETA ⋅ ⎛⎝ -------------⎞⎠
tnom
If BETATCE=0; otherwise (TriQuint model):
BETATCE ( t – tnom )
BETA ( T ) = BETA ⋅ 1.01

Parasitic Resistor Temperature Equations

The RD and RS resistances in JFET vary with temperature according to the
equations:
RD ( t ) = RD ⋅ ( 1 + TRD ⋅ Δt )
RS ( t ) = RS ⋅ ( 1 + TRS ⋅ Δt )
RG ( t ) = RG ⋅ ( 1 + TRG ⋅ Δt )

TriQuint (TOM) Extensions to LEVEL=3

TOM “TriQuint’s Own Model”[5] is implemented as part of the existing GaAs
LEVEL=3 model.[6] It has a few differences from the original implementation.
The HSPICE version of the TOM model takes advantage of existing LEVEL=3
features to provide:
■
Subthreshold model (NG, ND)
■
Channel and source/drain resistances, geometrically derived from width
and length (RD, RG, RS, RSH, RSHG, RSHL, HDIF, LDIF) (ACM=1)
■
Photolithographic compensation (LDEL, WDEL, ALIGN)
■ Substrate terminal
■
Geometric model with width and length specified in the element (ACM=1)
■
Automatic model selection as a function of width and length (WMIN, WMAX,
LMIN, LMAX)
■
User-defined band-gap coefficients (EG, GAP1, GAP2)

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TriQuint (TOM) Extensions to LEVEL=3

Several alias TOM parameters are defined for existing LEVEL=3 parameters to
make the conversion easier. An alias allows the original name or the alias name
to be used in the .MODEL statement. However, the model parameter printout is
in the original name. Please note that in two cases, a sign reversal is needed,
even when using the TOM parameter name.

Alias Printout Name Note

Q VGEXP

GAMMA GAMDS sign opposite of TriQuint’s original

VTOTC TCV sign opposite of TriQuint’s original

TRG1 TRG

TRD1 TRD

TRS1 TRS

Table 39 TOM Model Parameters

Name
(Alias) Description

BETATCE Temperature coefficient for beta. If BETATCE is set to a nonzero

value: BETA ( temp ) = BETA ( tnom ) ⋅ 1.01 ( BETATCE ⋅ ( temp – tnom ) )
The more
common beta temperature update
temp-⎞ BEX
is: BETA ( temp ) = BETA ( tnom ) ⋅ ⎛⎝ ------------
tnom⎠

DELTA Ids feedback parameter of the TOM model. This parameter is not used
if its value is zero. DELTA may be negative or positive.
i ds
i ds ⇒--------------------------------------------------------------------------------------------------
max [ ( – 1 + v ntol ) ,( DELTA + v ds ⋅ i ds ) ]

CAPDS Weff
Drain-to-source capacitance: CAPDSeff = CAPDS ⋅ ------------ ⋅ M
Leff

In the original TriQuint TOM implementation, LAMBDA and UCRIT parameters

do not exist. Therefore, they must remain zero (their default value) in LEVEL=3

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LEVEL=7 TOM3 (TriQuint’s Own Model III)

to reproduce the TOM model. Using non-zero values for these parameters with
nonzero BETATCE, DELTA, or CAPDS, results in a hybrid model.

LEVEL=7 TOM3 (TriQuint’s Own Model III)

TOM3 (TriQuint’s Own Model III) is available as the JFET/MESFET LEVEL=7
device model. TriQuint developed it to improve the accuracy of capacitance
equations by using quasi-static charge conservation in the implanted layer of a
MESFET.

Using the TOM3 Model

Follow these steps to use the TOM3 model:
1. Set LEVEL=7 to identify the model as TOM3.
2. The default room temperature is 25 in HSPICE, but is 27 in most other
simulators. When comparing to other simulators, set the simulation
temperature to 27 by using either .TEMP 27 or .OPTION TNOM=27.
3. The set of model parameters must include the model reference
temperature, TNOM, which corresponds to TREF in other levels in the JFET/
MESFET device models. The default for TR is 25.
4. TOM3 has its own charge-based capacitance model so it ignores the
capacitance model set in the CAPOP parameter.
5. The model uses analytical derivatives for conductances. This model ignores
the DERIV parameter, which selects the finite difference method.
6. You can use DTEMP with this model. DTEMP increases the temperature of
individual elements, relative to the circuit temperature. Set DTEMP on the
element line.
7. The general syntax for this element is the same as the other standard JFET/
MESFET models.
8. The model is defined by a specific sub-circuit, and a set of device equations.
The topology uses local feedback, decreasing the DC output conductance
to model drain, model dispersion, and self-heating effects.
Note: For more informations, refer to “TOM3 Equations, Revised: 2
December 1999” by Robert B. Hallgren and David S. Smith.

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LEVEL=7 TOM3 (TriQuint’s Own Model III)

Model Description
This section describes the DC and Capacitance equations for the HSPICE
LEVEL=7 JFET model.

DC Equations
The DC equations for the HSPICE LEVEL=7 JFET model are:
Drain to Source Current (IDS)
I DS = I O ⋅ ( 1 + LAMBDA ⋅ V DS )
Q
IO = β ⋅ VG ⋅ fK

α ⋅ V DS
f K = ----------------------------------------------------
K 1,1/K
[ 1 + ( α ⋅ V DS ) ]

V G = Q ⋅ V ST ⋅ log [ exp ( u ) + 1 ]

V GS – V TO + γ ⋅ V DS
u = ----------------------------------------------------
Q ⋅ V ST

V ST = V STO ⋅ ( 1 + M STO ⋅ V DS )
Transconductance
Q–1
⎛ Q ⋅ β ⋅ fK ⋅ VG ⎞
GM = ⎜ ------------------------------------------------⎟ ⋅ ( 1 + LAMBDA ⋅ V DS )
⎝ 1 + exp ( – u ) ⎠
Output Conductance
( V GS – V TO + γ ⋅ V DS ) ⋅ M ST0
G DS = LAMBDA ⋅ I 0 + G M ⋅ γ – ⎛ -----------------------------------------------------------------------------⎞
⎝ 1 + M ST0 ⋅ V DS ⎠

Q
Q ⋅ I 0 ⋅ M ST0 ⎞ ⎛
⎛ -------------------------------------- α ⋅ β ⋅ VG ⎞
- + ⎜ -----------------------------------------------------
-⎟ ⋅ ( 1 + LAMBDA ⋅ V DS )
⎝ 1 + M ST0 ⋅ V DS⎠ ⎝ K 1+1/K⎠
[1 + (α ⋅ V ) ] DS

Gate Leakage Diode Current

ILK and PLK have no temperature dependence.

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– V GS
I LS = ILK ⋅ ⎛⎝ 1 – exp ------------⎞⎠
PLK

– V GS
G LS = ⎛ -----------⎞ ⋅ ⎛ exp ------------⎞
ILK
⎝ PLK⎠ ⎝ PLK ⎠

– V GD
I LD = ILK ⋅ ⎛ 1 – exp -------------⎞
⎝ PLK ⎠

– V GD
G LD = ⎛ -----------⎞ ⋅ ⎛ exp -------------⎞
ILK
⎝ PLK⎠ ⎝ PLK ⎠
Temperature and Geometry Dependence
BETATCE ⋅ ( T – T NOM )
β = AREA ⋅ BETA ⋅ 1.01
ALPHATCE ⋅ ( T – T NOM )
α = ALPHA ⋅ 1.01
V TO = VTO + VTOC ⋅ ( T – T NOM )

γ = GAMMA + GAMMATC ⋅ ( T – T NOM )

V ST0 = VST + VSTTC ⋅ ( T – T NOM )

V MT0 = MST + MSTTC ⋅ ( T – T NOM )

Capacitance Equations
The capacitance equations for the HSPICE LEVEL=7 JFET model are:
Combined Gate Charge
Q GG = Q GL ⋅ f T + Q GH ⋅ ( 1 – f T ) + QGG0 ⋅ ( V GSI + V GDI )

∂f T
C GS = C GSL ⋅ f T + C GSH ⋅ ( 1 – f T ) + ( Q GL – Q GH ) ⋅ -------------- + QGG0
∂V GSI

∂f T
C GD = C GDL ⋅ f T + C GDH ⋅ ( 1 – f T ) + ( Q GL – Q GH ) ⋅ --------------- + QGG0
∂V GDI

f T = exp ( – Q GGB ⋅ I DS ⋅ V DS )

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∂f T
--------------
- = – QGGB ⋅ [ I DS + ( g m + g ds ) ⋅ V DS ] ⋅ f T
∂V GDI

∂f T
------------
- = – QGGB ⋅ [ I DS + g ds ⋅ V DS ] ⋅ f T
∂V GD
Lower Power Gate Charge
Q GL = qgI + QGCL ⋅ ( V GS + V GD )

qgl = QGQL ⋅ exp [ QGAG ⋅ ( V GS + V GD ) ] ⋅ cosh ( QGAD ⋅ V DS )

C GSL = qgl ⋅ [ QGAG + QGAD ⋅ tanh ( QGAD ⋅ V DS ) ] + QGCL

C GDL = qgl ⋅ [ QGAG + QGAD ⋅ tanh ( QGAD ⋅ V DS ) ] + QGCL

High Power Gate Charge
I DS
Q GH = QGQH ⋅ log ⎛ 1 + --------------⎞ + QGSH ⋅ V GS + QGDH ⋅ V GD
⎝ QGI0⎠

C GSH = ( G M + G DS ) ⋅ ⎛ -----------------------------⎞ + QGSH

QGQH
⎝ I DS + QGI0⎠

C GDH = G DS ⋅ ⎛ -----------------------------⎞ + QGDH

QGQH
⎝ I DS + QGI0⎠

Table 40 TOM3 Parameters

Name (Alias)
Units Default Description

LEVEL - 1 Model Index (7 for TOM3)

TNOM 25 Reference temperature

VTO V -2 Threshold voltage

VTOTC V/K 0 Threshold voltage temperature coefficient

ALPHA 1/V 2 Saturation factor

BETA A/V-Q 0.1 Transconductance parameter

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Table 40 TOM3 Parameters (Continued)

Name (Alias)
Units Default Description

LAMBDA 1/V 0 Channel length modulation parameter

VBI V 1 Gate diode built-in potential

CDS F 1E-12 Drain to source capacitance

IS A 1E-14 Forward gate diode saturation current

KF - 0 Flicker noise coefficient

AF - 1 Flicker noise exponent

GAMMA - 0 Drain voltage-induced threshold voltage lowering

coefficient

Q - 2 Parameter Q to model non-square-law of drain current

EG V 1.11 Barrier height at 0K(used for capacitance model)

XTI - 0 Diode saturation current temperature coefficient

VST V 1 Sub-threshold slope

ALPHATCE K-1 0 Alpha temperature coefficient (exponential)

ILK A 0 Leakage diode current parameter

PLK V 1 Leakage diode potential parameter

K - 2 Knee-function parameter

VSTTC VK-1 0 Linear temperature coefficient of VST

QGQL FV 5E-16 Charge parameter

QGQH FV -2E-16 Charge parameter

QGI0 A 1E-6 Charge parameter

QGAG V-1 1 Charge parameter

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Table 40 TOM3 Parameters (Continued)

Name (Alias)
Units Default Description

QGAD V-1 1 Charge parameter

QGGB A-1V-1 100 Charge parameter

QGCL F 2E-16 Charge parameter

QGSH F 1E-16 Sidewall capacitance

QGDH F 0 Sidewall capacitance

QGG0 F 0 Charge parameter

MST V-1 0 Sub-threshold slope – drain parameter

N - 1 Forward gate diode ideality factor

GAMMATC K-1 0 Linear temperature coefficient for GAMMA

VBITC VK-1 0 Linear temperature coefficient for VBI

CGSTCE K-1 0 Linear temperature coefficient for CGS

CGDTCE K-1 0 Linear temperature coefficient for CGD

MSTTC V-1K-1 0 Linear temperature coefficient for MST

BETATCE K-1 0 Linear temperature coefficient for beta

LEVEL=8 Materka Model

This section describes the JFET/MESFET LEVEL=8 device model.
For more information about this model, see Compact dc Model of GaAs FETs
for Large-Signal Computer Calculation, IEEE Journal of Solid-State Circuits,
Vol, SC-18, No.2, April 1983, and Computer Calculation of Large-Signal GaAs
FET Amplifier Characteristics, IEEE Transactions on Microwave Theory and
Techniques, Vol. MTT-33, No. 2, February 1985.

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Using the Materka Model

Follow these steps to use the Materka model:
1. Set LEVEL=8.
2. The default room temperature is 25 in HSPICE, but is 27 in most other
simulators. When comparing to other simulators, set the simulation
temperature to 27 by using either .TEMP 27 or .OPTION TNOM=27.
3. The model has its own charge-based capacitance model. This model
ignores the CAPOP parameter, which selects difference capacitance.
4. The ACM parameter is not supported.

DC Model
V GS 2 α1*V DS
I D = I DSS ⎛ 1 – ---------⎞ tanh ⎛ ----------------------⎞
⎝ VP ⎠ ⎝ V GS – V P⎠

∂I D V GS α1 ⋅ V DS
g m = ------------ = I DSS – ------ ⎛⎝ 1 – ---------⎞⎠ ⋅ tanh ⎛⎝ -----------------------⎞⎠
2
∂V GS VP VP V GS – V P

V GS 2⎞
⎛ 1 – -------- α1 ⋅ V DS⎞ – α1 ⋅ V DS
- ⋅ sec h 2 ⎛ ----------------------
- --------------------------
⎝ VP ⎠ ⎝ V GS – V P ⎠ ⋅ 2
V GS – V P

∂I D V GS 2γ V GS α1 ⋅ V DS
g DS = ------------ = I DSS ⋅ ⎛ 1 – ---------⎞ ⋅ – ---------------- ⋅ tanh ⎛ -----------------------⎞
∂V DS ⎝ VP ⎠ 2 ⎝ V GS – V P ⎠
VP

V GS⎞
⎛ 1 – -------- α1 ⋅ V DS⎞ α1 ⋅ ( V GS – V PO )
- ⋅ sec h 2 ⎛ ----------------------
- ⋅ --------------------------------------------
⎝ VP ⎠ ⎝ V GS – V P ⎠ 2
( V GS – V P )

V P = V TO + γ V DS
Table 41 DC Model Parameters

Name
(Alias) Units Default Description

LEVEL 1.0 LEVEL=8 is the Materka MESFET model.

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Table 41 DC Model Parameters (Continued)

Name
(Alias) Units Default Description

ALPHA1 Empirical constant

VTO V -2.0 Threshold voltage. If set, it overrides internal calculation. A

negative VTO is a depletion transistor regardless of NJF or
PJF. A positive VTO is always an enhancement transistor.

VP V Pinch-off voltage (default is calculated)

IDSS A 0.1 Drain saturation current for Vgs=0

GAMMA 1/V 0.0 Voltage slope parameter of pinch-off voltage

Gate Capacitance Model

CGS veff – vte vds

C GS = --------------------------- 1 + -------------------------------------------------------- ⋅ 1 + -----------------------------------------------------
vnew ( veff – vte ) + ( 0.2 )
2 2 2
vds + ⎛⎝ -----------------------⎞⎠
4 1 – ------------- 2 1
PB ALPHA1

⎛ ⎞
CGD ⎜ vds ⎟
------------- ⎜ 1 – ----------------------------------------------------
-⎟
2 ⎜ 2⎟
vds + ⎛ -----------------------⎞ ⎠
2 1
⎝ ⎝ ALPHA1⎠

CGS veff – vte vds

C GD = --------------------------- 1 + -------------------------------------------------------- ⋅ 1 – -----------------------------------------------------
vnew ( veff – vte ) + ( 0.2 )
2 2 2
vds + ⎛⎝ -----------------------⎞⎠
4 1 – ------------- 2 1
PB ALPHA1

⎛ ⎞
CGD ⎜ vds ⎟
------------- ⎜ 1 + -----------------------------------------------------⎟
2 ⎜ 2⎟
vds + ⎛ -----------------------⎞ ⎠
2 1
⎝ ⎝ ALPHA1⎠

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vte = VTO + GAMMA ⋅ vds = effective threshold

2
veff = --- vgs + vgd + vds + ⎛⎝ -----------------------⎞⎠
1 2 1
2 ALPHA1

1 2 2
vnew = --- [ veff + vte + ( veff – vte ) + ( 0.2 ) ]
2
Table 42 Gate Capacitance Model Parameters

Name
(Alias) Units Default Description

CGS F 0.0 Zero-bias gate-source junction capacitance

CGD F 0.0 Zero-bias gate-drain junction capacitance

PB V 0.8 Gate Junction Potential

N 1.0 Emission coefficient for gate-drain and gate-

source diodes

Noise Model
Two current sources model the thermal noise generation in the drain and
source regions (RD and RS resistances):
■
inrd
■
inrs
inrd and inrs are modeled by:
1⁄ 2
inrs = ⎛⎝ --------⎞⎠
4kt
rs

4kt 1 ⁄ 2
inrd = ⎛ --------⎞
⎝ rd ⎠

Channel thermal and flicker noise are modeled by the ind current source, and
defined by the equation:
ind = channel thermal noise+ flicker noise

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8kt ⋅ g m 1 ⁄ 2
channel thermal noise = ⎛ ---------------------⎞
⎝ 3 ⎠
AF 1 ⁄ 2
KF ⋅ ids
flicker noise = ⎛ -----------------------------⎞
⎝ f ⎠
Table 43 Noise Model Parameters

Name
(Alias) Units Default Description

AF 1.0 Flicker noise exponent

KF 0.0 Flicker noise coefficient. Reasonable values for KF

are in the range 1e-19 to 1e-25 V2 F.

Example
.MODEL NCH NJF LEVEL =8
+ IDSS = 69.8e-3 VTO = -2 GAMMA = 0
+ ALPHA1 = 1 RS = 0 RD = 0
+ CGS = 1e-15 CGD = 2e-16 PB = 0.8
+ IS = 5e-16 AF = 1 KF = 0
+ FC = 0.5
.END

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References

References
[1] GaAs FET Device and Circuit Simulation in SPICE, IEEE Transactions on
Electron Devices, Vol. ED-34.
[2] A MESFET Model for Use in the Design of GaAs Integrated Circuits, IEEE
Transactions on Microwave Theory, Vol. MTT-28 No. 5.
[3] H. Statz, P.Newman, I.W.Smith, R.A. Pucel, and H.A. Haus, GaAs FET
Device and Circuit Simulation in Spice.
[4] Tsivids, Yanis P., Operation and Modeling of the MOS Transistor, McGraw-
Hill, 1987, p. 340.
[5] A.J. McCamant, G.D. Mc Cormack, and D.H.Smith, An Improved GaAs
MESFET Model for SPICE, IEEE.
[6] W.Curtice, “A MESFET Model for Use in the Design of GaAs Integrated
Circuits,” IEEE Tran, Microwave, and H.Statz, P.Newman, I.W.Smith, R.A.
Pucel, and H.A. Haus, “GaAs FET Device And Circuit Simulation in SPICE”.

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References

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5BJT Models

Describes how to use BJT models in HSPICE circuit simulations.

HSPICE ships hundreds of examples for your use; see Listing of

Demonstration Input Files for paths to demo files.
The bipolar-junction transistor (BJT) model is an adaptation of the integral
charge control model of Gummel and Poon.The HSPICE BJT model extends
the original Gummel-Poon model to include several effects at high bias levels.
This model automatically simplifies to the Ebers-Moll model if you do not
specify the VAF, VAR, IKF, and IKR parameters.
These topics are discussed in the following sections:
■
Overview of BJT Models
■ BJT Model Equations (NPN and PNP)
■
DC Model Equations
■
Substrate Current Equations
■ Base Charge Equations
■
Variable Base Resistance Equations
■
BJT Capacitance Equations
■
Defining BJT Noise Equations
■
Defining Noise Equations
■
BJT Temperature Compensation Equations
■ BJT LEVEL=2 Temperature Equations
■
Converting National Semiconductor Models
■
Defining Scaled BJT Subcircuits
■ VBIC Bipolar Transistor Model

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■
LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503)
■
LEVEL=8 HICUM Model
■
HICUM Model Advantages
■
LEVEL=9 VBIC99 Model
■
LEVEL=9 Model Parameters
■
LEVEL=10 Philips MODELLA Bipolar Model
■
LEVEL=11 UCSD HBT Model
■
LEVEL=13 HICUM0 Model

Overview of BJT Models

You can use the BJT model to develop BiCMOS, TTL, and ECL circuits.

Note: To modify high-injection effects for BiCMOS devices, use the IKF
and IKR high-current Beta degradation parameters.

The SUBS model parameter facilitates the modeling of both vertical and lateral
geometrics.

Selecting Models
To select a BJT device, use a BJT element and model statement. The element
statement uses the name of the simulation device model to reference the
model statement. The following example uses the reference name MOD1. This
example uses an NPN model type to describe an NPN transistor.
Q3 3 2 5 MOD1 <parameters>
.MODEL MOD1 NPN <parameters>

You can specify parameters in both element and model statements. If you
specify the same parameter in both an element and a model, then the element
parameter (local to the specific instance of the model) always overrides the
model parameter (global default for all instances of the model, if you did not
define the parameter locally). The model statement specifies the type of
device—for example, for a BJT, the device type might be NPN or PNP.

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BJT Control Options

The following control options affect the BJT model:

DCAP Selects the equation that determines the BJT capacitances

DCCAP Invokes capacitance calculations in DC analysis
GRAMP Place a conductance in parallel with both the base-emitter and the
GMIN base-collector pn junctions
GMINDC

You can override global depletion capacitance equation selection that uses
the .OPTION DCAP=<val> statement in a BJT model by including
DCAP=<val> in the BJTs .MODEL statement.

Convergence
Adding a base, collector, and emitter resistance to the BJT model improves its
convergence. The resistors limit the current in the device so that the forward-
biased pn junctions are not overdriven.

BJT Model Statement

You can use the .MODEL statement to include a BJT model in your HSPICE
netlist. For a general description of the .MODEL statement, see the HSPICE
and HSPICE RF Command Reference.
Syntax
.MODEL mname NPN <(> <pname1 =val1> ... <)>
.MODEL mname PNP <pname1 =val1> ...

Parameter Description

mname Model name. Elements refer to the model by this name.

NPN Identifies an NPN transistor model

pname1 Each BJT model can include several model parameters.

PNP Identifies a PNP transistor model

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Example
.MODEL t2n2222a NPN
+ ISS=0. XTF= 1. NS = 1.00000
+ CJS=0. VJS= 0.50000 PTF= 0.
+ MJS=0. EG = 1.10000 AF = 1.
+ ITF=0.50000 VTF= 1.00000
+ BR =40.00000 IS = 1.6339e-14 VAF=103.40529
+ VAR=17.77498 IKF= 1.00000
+ NE =1.31919 IKR= 1.00000 ISC= 3.6856e-13
+ NC =1.10024 IRB= 4.3646e-05 NF = 1.00531
+ NR =1.00688 RBM= 1.0000e-02 RB =71.82988
+ RC =0.42753 RE = 3.0503e-03 MJE= 0.32339
+ MJC=0.34700 VJE= 0.67373 VJC= 0.47372
+ TF =9.693e-10 TR =380.00e-9 CJE= 2.6734e-11
+ CJC=1.4040e-11 FC = 0.95000 XCJC=0.94518

BJT Basic Model Parameters

To permit the use of model parameters from earlier versions of HSPICE, many
model parameters have aliases, which are included in the model parameter list
in BJT Basic Model Parameters on page 162. The new name is always used on
printouts, even if the model statement uses an alias.
BJT model parameters are divided into several groups. The first group of DC
model parameters includes the most basic Ebers-Moll parameters. This model
is effective for modeling low-frequency large-signal characteristics.
Low-current Beta degradation effect parameters ISC, ISE, NC, and NE aid in
modeling the drop in the observed Beta, caused by the following mechanisms:
■
Recombination of carriers in the emitter-base space charge layer
■
Recombination of carriers at the surface
■
Formation of emitter-base channels
Low base and emitter dopant concentrations, found in some BIMOS type
technologies, use the high-current Beta degradation parameters, IKF and IKR.
Use the base-width modulation parameters, that is, early effect parameters VAF
and VAR to model high-gain, narrow-base devices. The model calculates the
slope of the I-V curve for the model in the active region with VAF and VAR. If
VAF and VAR are not specified, the slope in the active region is zero.
The RE, RB, and RC parasitic resistor parameters are the most frequently used
second-order parameters, because they replace external resistors. This
simplifies the input netlist file. All resistances are functions of the BJT multiplier

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M value. Dividing resistances by M simulates parallel resistances. The base

resistance is a function of base current as is often the case in narrow-base
technologies.

Bypassing Latent Devices (HSPICE Only)

Use the BYPASS (latency) option to decrease simulation time in large designs.
To speed simulation time, this option does not recalculate currents,
capacitances, and conductances, if the voltages at the terminal device nodes
have not changed. The BYPASS option applies to MOSFETs, MESFETs,
JFETs, BJTs, and diodes. Use .OPTION BYPASS to set BYPASS.
BYPASS might reduce simulation accuracy for tightly-coupled circuits such as
op-amps, high gain ring oscillators, and so on. Use .OPTION MBYPASS to set
MBYPASS to a smaller value for more-accurate results.

Parameters
Transient model parameters for BJTs are composed of two groups: junction
capacitor parameters and transit time parameters.
■
CJE, VJE, and MJE model the base-emitter junction.
■
CJC, VJC, and MJC model base-collector junction capacitance.
■
CJS, VJS, and MJS model the collector-substrate junction capacitance.
TF is the forward transit time for base charge storage. TF can be modified to
account for bias, current, and phase, by XTF, VTF, ITF, and PTF. The base
charge storage reverse transit time is set by TR. To select from several sets of
temperature equations for the BJT model parameters, set TLEV and TLEVC.

Table 44 BJT Model Parameters

Parameter Description

DC BF, BR, IBC, IBE, IS, ISS, NF, NR, NS, VAF, VAR

beta degradation ISC, ISE, NC, NE, IKF, IKR

geometric SUBS, BULK

resistor RB, RBM, RE, RC, IRB

junction capacitor CJC,CJE,CJS,FC,MJC,MJE,MJS,VJC,VJE,VJS,XCJC

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Table 44 BJT Model Parameters (Continued)

Parameter Description

parasitic capacitance CBCP, CBEP, CCSP

transit time ITF, PTF, TF, VT, VTF, XTF

noise KF, AF

Table 45 DC Parameters for BJT Models

Name (Alias)
Unit Default Description

BF (BFM) 100.0 Ideal maximum forward Beta.

BR (BRM) 1.0 Ideal maximum reverse Beta.

BULK (NSUB) 0.0 Sets the bulk node to a global node name. A
substrate terminal node name (ns) in the
element statement overrides BULK.

IBC amp 0.0 Reverse saturation current between base and

collector. If you specify both IBE and IBC,
simulation uses them in place of IS to calculate
DC current and conductance; otherwise, the
simulator uses IS.

IBCeff =IBC ⋅ AREAB ⋅ M

AREAC replaces AREAB, depending on

vertical or lateral geometry.

EXPLI amp 0 Current explosion model parameter. The PN

junction characteristics above the explosion
current area linear with the slope at the
explosion point. This speeds up simulation and
improves convergence.

EXPLIeff =EXPLI ⋅ AREAeff

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Table 45 DC Parameters for BJT Models (Continued)

Name (Alias)
Unit Default Description

IBE amp 0.0 Reverse saturation current between base and

emitter. If you specify both IBE and IBC,
simulation uses them in place of IS to calculate
DC current and conductance; otherwise, the
simulator uses IS.

IBEeff =IBE ⋅ AREA ⋅ M

IS amp 1.0e-16 Transport saturation current. If you specify both

IBE and IBC, simulation uses them in place of
IS to calculate DC current and conductance;
otherwise, simulation uses IS.

ISeff =IS ⋅ AREA ⋅ M

ISS amp 0.0 Reverse saturation current bulk-to-collector or

bulk-to-base, depending on vertical or lateral
geometry selection.

SSeff =ISS ⋅ AREA ⋅ M

LEVEL 1.0 Model selector.

NF 1.0 Forward current emission coefficient.

NR 1.0 Reverse current emission coefficient.

NS 1.0 Substrate current emission coefficient.

SUBS Substrate connection selector:

■
+1 for vertical geometry
■ -1 for lateral geometry
■
Default=1 for NPN
■
Default=-1 for PNP

UPDATE 0 UPDATE=1 uses alternate base charge

equation.

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Table 46 Low-Current Beta Degradation Parameters

Name (Alias) Unit Default Description

ISC (C4, JLC) amp 0.0 Base-collector leakage saturation current. If

ISC is greater than 1e-4, then:

ISC =IS ⋅ ISC

otherwise:

ISCeff =ISC ⋅ AREAB ⋅ M

AREAC replaces AREAB, depending on

vertical or lateral geometry.

ISE (C2, JLE) amp 0.0 Base-emitter leakage saturation current. If ISE
is greater than 1e-4, then:

ISE =IS ⋅ ISE

otherwise:

ISEeff =ISE ⋅ AREA ⋅ M

NC (NLC) 2.0 Base-collector leakage emission coefficient.

NE (NLE) 1.5 Base-emitter leakage emission coefficient.

Table 47 Base Width Modulation Parameters

Name (Alias) Unit Default Description

VAF (VA, VBF) V 0.0 Forward early voltage. Zero=infinite value.

VAR (VB, V 0.0 Reverse early voltage. Zero=infinite value.

VRB, BV)

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Table 48 High-Current Beta Degradation Parameters

Name (Alias) Unit Default Description

IKF (IK, JBF) amp 0.0 Corner for forward Beta high-current roll-off.
Use zero to indicate an infinite value.

IKFeff =IKF ⋅ AREA ⋅ M

IKR (JBR) amp 0.0 Corner for reverse Beta high-current roll-off.
Use zero to indicate an infinite value.

IKReff =IKR ⋅ AREA ⋅ M

NKF 0.5 Exponent for high-current Beta roll-off.

Table 49 Parasitic Resistance Parameters

Name (Alias) Unit Default Description

IRB (JRB, amp 0.0 Base current, where base resistance falls half-
IOB) way to RBM. Use zero to indicate an infinite
value.

IRBeff =IRB ⋅ AREA ⋅ M

RB ohm 0.0 Base resistance: RBeff =RB / (AREA ⋅ M)

RBM ohm RB Minimum high-current base resistance:

RBMeff =RBM / (AREA ⋅ M)

RE ohm 0.0 Emitter resistance: REeff =RE / (AREA ⋅ M)

RC ohm 0.0 Collector resistance: RCeff =RC / (AREA ⋅ M)

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Table 50 Junction Capacitor Parameters

Name (Alias) Unit Default Description

CJC F 0.0 Base-collector zero-bias depletion capacitance

■
Vertical: CJCeff =CJC ⋅ AREAB ⋅ M
■ Lateral: CJCeff =CJC ⋅ AREAC ⋅ M

if you specify a value other than zero for ibc and

ibe.

CJE F 0.0 Base-emitter zero-bias depletion capacitance

(vertical and lateral): CJEeff =CJE ⋅ AREA ⋅
M

CJS (CCS, F 0.0 Zero-bias collector substrate capacitance

CSUB) ■ Vertical:
CJSeff =CJS ⋅ AREAC ⋅ M
■
Lateral:
CJSeff =CJS ⋅ AREAB ⋅ M

If you specify a value other than zero for ibc and

ibe.

FC 0.5 Coefficient for forward bias depletion

capacitance formula for DCAP=1

DCAP Default=2 and FC are ignored.

MJC (MC) 0.33 Base-collector junction exponent (grading

factor).

MJE (ME) 0.33 Base-emitter junction exponent (grading factor).

MJS(ESUB) 0.5 Substrate junction exponent (grading factor).

VJC (PC) V 0.75 Base-collector built-in potential.

VJE (PE) V 0.75 Base-emitter built-in potential.

VJS (PSUB) V 0.75 Substrate junction built in potential.

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Table 50 Junction Capacitor Parameters (Continued)

Name (Alias) Unit Default Description

XCJC (CDIS) 1.0 Internal base fraction of base-collector

depletion capacitance.

Table 51 Parasitic Capacitances Parameters

Name (Alias) Unit Default Description

CBCP F 0.0 External base-collector constant capacitance:

CBCPeff =CBCP ⋅ AREA ⋅ M

CBEP F 0.0 External base-emitter constant capacitance:

CBEPeff =CBEP ⋅ AREA ⋅ M

CCSP F 0.0 External collector substrate constant

capacitance (vertical) or base substrate
(lateral):

CCSPeff =CCSP ⋅ AREA ⋅ M

Table 52 Transit Time Parameters

Name (Alias) Unit Default Description

ITF (JTF) amp 0.0 TF high-current parameter:

ITFeff =ITF ⋅ AREA ⋅ M

PTF x 0.0 Frequency multiplier to determine excess

phase.

TF s 0.0 Base forward transit time.

TR s 0.0 Base reverse transit time.

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Table 52 Transit Time Parameters (Continued)

Name (Alias) Unit Default Description

VTF V 0.0 TF base-collector voltage dependence

coefficient. Zero indicates an infinite value.

XTF 0.0 TF bias dependence coefficient.

Table 53 Noise Parameters

Name (Alias) Unit Default Description

AF 1.0 Flicker-noise exponent.

KF 0.0 Flicker-noise coefficient.

Table 54 LEVEL=2 Parameters

Name (Alias) Unit Default Description

BRS 1.0 Reverse beta for substrate BJT.

GAMMA 0.0 Epitaxial doping factor:

GAMMA =(2 ⋅ ni / n)2

In this equation, n is epitaxial impurity

concentration.

NEPI 1.0 Emission coefficient.

QCO Coul 0.0 Epitaxial charge factor:

■ Vertical: QCOeff =QCO ⋅ AREAB ⋅ M
■ Lateral: QCOeff =QCO ⋅ AREAC ⋅ M

if you specify a value other than zero for ibc and

ibe.

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Table 54 LEVEL=2 Parameters (Continued)

Name (Alias) Unit Default Description

RCO (RC) ohm 0.0 Resistance of epitaxial region under equilibrium

conditions:

RCeff =RC/(AREA ⋅ M)

RCC ohm 0.0 Collector resistance

VO V 0.0 Carrier velocity saturation voltage. Use zero to

indicate an infinite value.

BJT Model Temperature Effects

Several temperature parameters control derating of the BJT model parameters.
They include temperature parameters for junction capacitance, Beta
degradation (DC), and base modulation (Early effect) among others.
Table 55 BJT Temperature Parameters

Function Parameter

base modulation TVAF1, TVAF2, TVAR1, TVAR2

capacitor CTC, CTE, CTS

capacitor potentials TVJC, TVJE, TVJS

DC TBF1, TBF2, TBR1, TBR2, TIKF1, TIKF2, TIKR1, TIKR2,

TIRB1, TIRB2, TISC1, TISC2, TIS1, TIS2, TISE1, TISE2,
TISS1, TISS2, XTB, XTI

emission coefficients TNC1, TNC2, TNE1, TNE2, TNF1, TNF2, TNR1, TNR2,
TNS1, TNS2

energy gap EG, GAP1, GAP2

equation selectors TLEV, TLEVC

grading MJC, MJE, MJS, TMJC1, TMJC2, TMJE1, TMJE2, TMJS1,

TMJS2

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Table 55 BJT Temperature Parameters (Continued)

Function Parameter

resistors TRB1, TRB2, TRC1, TRC2, TRE1, TRE2, TRM1, TRM2

transit time TTF1, TTF2, TTR1, TTR2

Table 56 Temperature Effect Parameters

Name (Alias) Unit Default Description

BEX 2.42 VO temperature exponent (LEVEL=2 only).

BEXV 1.90 RC temperature exponent (LEVEL=2 only).

CTC 1/× 0.0 Temperature coefficient for zero-bias base

collector capacitance. TLEVC=1 enables CTC
to override the default temperature
compensation.

CTE 1/× 0.0 Temperature coefficient for zero-bias base

emitter capacitance. TLEVC=1 enables CTE to
override the default temperature compensation.

CTS 1/× 0.0 Temperature coefficient for zero-bias substrate

capacitance. TLEVC=1 enables CTS to
override the default temperature compensation.

EG eV Energy gap for pn junction diode

for TLEV=0 or 1, default=1.11;
for TLEV=2, default=1.16:
■ 1.17 - silicon
■
0.69 - Schottky barrier diode
■ 0.67 - germanium
■
1.52 - gallium arsenide

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Table 56 Temperature Effect Parameters (Continued)

Name (Alias) Unit Default Description

GAP1 eV/× 7.02e-4 First bandgap correction factor (from Sze, alpha
term):
■
7.02e-4 - silicon
■ 4.73e-4 - silicon
■
4.56e-4 - germanium
■ 5.41e-4 - gallium arsenide

GAP2 x 1108 Second bandgap correction factor (Sze, beta

term):
■
1108 - silicon
■ 636 - silicon
■
210 - germanium
■
204 - gallium arsenide

MJC(MC) 0.33 Base-collector junction exponent (grading

factor).

MJE(ME) 0.33 Base-emitter junction exponent (grading factor).

MJS (ESUB) 0.5 Substrate junction exponent (grading factor).

TBF1 1/× 0.0 First-order temperature coefficient for BF.

TBF2 1/° 2 0.0 Second-order temperature coefficient for BF.

TBR1 1/× 0.0 First-order temperature coefficient for BR.

TBR2 1/° 2 0.0 Second-order temperature coefficient for BR.

TIKF1 1/× 0.0 First-order temperature coefficient for IKF.

TIKF2 1/° 2 0.0 Second-order temperature coefficient for IKF.

TIKR1 1/× 0.0 First-order temperature coefficient for IKR.

TIKR2 1/° 2 Second-order temperature coefficient for IKR.

TIRB1 1/× 0.0 First-order temperature coefficient for IRB.

TIRB2 1/° 2 0.0 Second-order temperature coefficient for IRB.

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Table 56 Temperature Effect Parameters (Continued)

Name (Alias) Unit Default Description

TISC1 1/× 0.0 First-order temperature coefficient for ISC

TLEV=3 enables TISC1.

TISC2 1/° 2 0.0 Second-order temperature coefficient for ISC

TLEV=3 enables TISC2.

TIS1 1/× 0.0 First-order temperature coefficient for IS or IBE

and IBC TLEV=3 enables TIS1.

TIS2 1/° 2 0.0 Second-order temperature coefficient for IS or

IBE and IBC TLEV=3 enables TIS2.

TISE1 1/× 0.0 First-order temperature coefficient for ISE

TLEV=3 enables TISE1.

TISE2 1/° 2 0.0 Second-order temperature coefficient for ISE.

TLEV=3 enables TISE2.

TISS1 1/× 0.0 First-order temperature coefficient for ISS

TLEV=3 enables TISS1.

TISS2 1/° 2 0.0 Second-order temperature coefficient for ISS

TLEV=3 enables TISS2.

TITF1 First-order temperature coefficient for ITF.

TITF2 Second-order temperature coefficient for ITF.

TLEV 0.0 Temperature equation level selector for BJTs

(interacts with TLEVC).

TLEVC 0.0 Temperature equation level selector: BJTs,

junction capacitances, and potentials (interacts
with TLEV).

TMJC1 1/× 0.0 First-order temperature coefficient for MJC.

TMJC2 1/° 2 0.0 Second-order temperature coefficient for MJC.

TMJE1 1/× 0.0 First order temperature coefficient for MJE.

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Table 56 Temperature Effect Parameters (Continued)

Name (Alias) Unit Default Description

TMJE2 1/° 2 0.0 Second-order temperature coefficient for MJE.

TMJS1 1/× 0.0 First-order temperature coefficient for MJS.

TMJS2 1/° 2 0.0 Second-order temperature coefficient for MJS.

TNC1 1/× 0.0 First-order temperature coefficient for NC.

TNC2 0.0 Second-order temperature coefficient for NC.

TNE1 1/× 0.0 First-order temperature coefficient for NE.

TNE2 1/° 2 0.0 Second-order temperature coefficient for NE.

TNF1 1/× 0.0 First-order temperature coefficient for NF.

TNF2 1/° 2 0.0 Second-order temperature coefficient for NF.

TNR1 1/× 0.0 First-order temperature coefficient for NR.

TNR2 1/° 2 0.0 Second-order temperature coefficient for NR.

TNS1 1/× 0.0 First-order temperature coefficient for NS.

TNS2 1/° 2 0.0 Second-order temperature coefficient for NS.

TRB1 (TRB) 1/× 0.0 First-order temperature coefficient for RB.

TRB2 1/° 2 0.0 Second-order temperature coefficient for RB.

TRC1 (TRC) 1/× 0.0 First-order temperature coefficient for RC.

TRC2 1/° 2 0.0 Second-order temperature coefficient for RC.

TRE1 (TRE) 1/× 0.0 First-order temperature coefficient for RE.

TRE2 1/° 2 0.0 Second-order temperature coefficient for RE.

TRM1 1/× TRB1 Firs-order temperature coefficient for RBM.

TRM2 1/° 2 TRB2 Second-order temperature coefficient for RBM.

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Table 56 Temperature Effect Parameters (Continued)

Name (Alias) Unit Default Description

TTF1 1/× 0.0 First-order temperature coefficient for TF.

TTF2 1/° 2 0.0 Second-order temperature coefficient for TF.

TTR1 1/× 0.0 First-order temperature coefficient for TR.

TTR2 1/° 2 0.0 Second-order temperature coefficient for TR.

TVAF1 1/× 0.0 First-order temperature coefficient for VAF.

TVAF2 1/° 2 0.0 Second-order temperature coefficient for VAF.

TVAR1 1/× 0.0 First-order temperature coefficient for VAR.

TVAR2 1/° 2 0.0 Second-order temperature coefficient for VAR.

TVJC V/× 0.0 VJC temperature coefficient. TVJC uses

TLEVC= 1 or 2 to override default temperature
compensation.

TVJE V/× 0.0 VJE temperature coefficient. TVJE uses

TLEVC= 1 or 2 to override default temperature
compensation.

TVJS V/× 0.0 VJS temperature coefficient. TVJS uses

TLEVC= 1 or 2 to override default temperature
compensation.

XTB(TBTCB) 0.0 Forward and reverse Beta temperature

exponent (used with TLEV=0, 1, or 2).

XTI 3.0 Saturation current temperature exponent:

■ Use XTI=3.0 for silicon diffused junction.
■
Set XTI=2.0 for Schottky barrier diode.

BJT Device Equivalent Circuits

This section describes BJT scaling, current conventions, and equivalent
circuits.

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Scaling
Scaling is controlled by the element parameters AREA, AREAB, AREAC, and M.
The AREA parameter, the normalized emitter area, divides all resistors and
multiplies all currents and capacitors. AREAB and AREAC scale the size of the
base area and collector area. Either AREAB or AREAC is used for scaling,
depending on whether vertical or lateral geometry is selected (using the SUBS
model parameter). For vertical geometry, AREAB is the scaling factor for IBC,
ISC, and CJC. For lateral geometry, AREAC is the scaling factor. The scaling
factor is AREA for all other parameters.
The following formula scales the DC model parameters (IBE, IS, ISE, IKF,
IKR, and IRB) for both vertical and lateral BJT transistors:
Ieff = AREA ⋅ M ⋅ I
In the preceding equation, I can be IBE, IS, ISE, IKF, IKR, or IRB.
For both the vertical and lateral, the resistor model parameters, RB, RBM, RE,
and RC are scaled by the following equation.
R
Reff = ----------------------------
AREA ⋅ M
In the preceding equation, R can be RB, RBM, RE, or RC.

BJT Current Conventions

The example in Figure 22 on page 178 assumes the direction of current flow
through the BJT. Use either I(Q1) or I1(Q1) syntax to print the collector current.
■ I2(Q1) refers to the base current.
■
I3(Q1) refers to the emitter current.
■
I4(Q1) refers to the substrate current.
Note: The above terminal currents account both DC and charge
induced currents.

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nc
(collector node)
I1 (Q1)

nb
ns
(base node)
(substrate node)
I2 (Q1)
I4 (Q1)

ne
(emitter node)
I3 (Q1)

Figure 22 BJT Current Convention

BJT Equivalent Circuits

IC circuit simulation uses four equivalent circuits to analyze BJTs: DC,
transient, AC, and AC noise circuits. The components of these circuits form the
basis for all element and model equations. Because these circuits represent
the entire BJT during simulation, every effort has been made to demonstrate
the relationship between the equivalent circuit and the element/model
parameters.
The fundamental components in the equivalent circuit are the base current (ib)
and the collector current (ic). For noise and AC analyses, the actual ib and ic
currents are not used. Instead, the partial derivatives of ib and ic with respect
to the terminal voltages vbe and vbc are used. The names for these partial
derivatives are:
Reverse Base Conductance
∂ib
gμ = -----------
∂vbc vbe = const.

Forward Base Conductance

∂ib
gπ = -----------
∂vbe vbc = const.

Collector Conductance
∂ic ∂ic
g o = ----------- = – -----------
∂vce vbe = const.
∂vbc vbe = const.

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Transconductance
∂ic
gm = -----------
∂vbe vce = const.

∂ic ∂ic
gm = ----------- + -----------
∂vbe ∂vbc

∂ic
gm = ----------- – g o
∂vbe

The ib and ic equations account for all DC effects of the BJT.

collector

CBCP rc

cbcx cbc ibc

rb
Base ice

cbe ibe

ibs cbs

substrate re

CCSP
CBEP

emitter

Figure 23 Lateral Transistor, BJT Transient Analysis

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collector

CBCP rc CCSP

cbcx cbc ibc

isc csc
rb
Base ice
substrate

cbe ibe

re

CBEP

emitter

Figure 24 Vertical Transistor, BJT Transient Analysis

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collector

CBCP rc

cbcx cbc gbc

rb
Base gm ice go
vbe

cbe gbe

gbs cbs

substrate re

CCSP
CBEP

emitter

Figure 25 Lateral Transistor, BJT AC Analysis

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collector

CBCP rc CCSP

cbcx cbc gbc

gsc csc
rb
gm
Base ice go
vbe
substrate

cbe gbe

re

CBEP

emitter

Figure 26 Vertical Transistor, BJT AC Analysis

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collector

CBCP rc inrc

cbcx cbc gbc

rb
Base gm ice go inc
vbe

inrb
cbe gbe inb

gbs cbs

substrate re inre

CCSP CBEP

emitter

Figure 27 Lateral Transistor, BJT AC Noise Analysis

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collector

CBCP CCSP
rc inrc

cbcx cbc gbc

gsc csc
rb
Base gm ice go inc
vbe
substrate

inrb
cbe gbe inb

re inre

CBEP

emitter

Figure 28 Vertical Transistor, BJT AC Noise Analysis

Table 57 Equation Variable Names

Variable Definitions

cbc Internal base to collector capacitance

cbcx External base to collector capacitance

cbe Internal base to emitter capacitance

csc Substrate to collector capacitance (vertical transistor only)

cbs Base to substrate capacitance (lateral transistor only)

f Frequency

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Table 57 Equation Variable Names (Continued)

Variable Definitions

gbc Reverse base conductance

gbe Forward base conductance

gm Transconductance

gsc Substrate to collector conductance (vertical transistor only)

go Collector conductance

gbs Base to substrate conductance (lateral transistor only)

ib External base terminal current

ibc DC current base to collector

ibe DC current base to emitter

ic External collector terminal current

ice DC current collector to emitter

inb Base current equivalent noise

inc Collector current equivalent noise

inrb Base resistor current equivalent noise

inrc Collector resistor equivalent noise

inre Emitter resistor current equivalent noise

ibs DC current base to substrate (lateral transistor only)

isc DC current substrate to collector (vertical transistor only)

qb Normalized base charge

rb Base resistance

rbb Short-circuit base resistance

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Table 57 Equation Variable Names (Continued)

Variable Definitions

vbs Internal base substrate voltage

vsc Internal substrate collector voltage

Table 58 Equation Constants

Quantities Definitions

k 1.38062e-23 (Boltzmann’s constant)

q 1.60212e-19 (Electron charge)

t Temperature in degrees Kelvin

Δt t - tnom

tnom tnom =273.15 + TNOM in degrees Kelvin

vt(t) k ⋅ t/q

vt(tmon) k ⋅ tnom/q

Table 59 BJT DC Operating Point Output

Quantities Definitions

ib base current

ic collector current

is substrate current

vbe B-E voltage

vbc B-C voltage

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Table 59 BJT DC Operating Point Output (Continued)

Quantities Definitions

vcs C-S voltage

vs substrate voltage

power power

betad(betadc) beta for DC analysis

gm transconductance

rpi B-E input resistance

rmu(rmuv) B-C input resistance

rx base resistance

ro collector resistance

cpi internal B-E capacitance

cmu internal B-C capacitance

cbx external B-C capacitance

ccs C-S capacitance

cbs B-S capacitance

cxs external substrate capacitance

betaac beta for AC analysis

ft unity gain bandwidth

*tolcc Collector current tolerance

*tolcb Base current tolerance

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BJT Model Equations (NPN and PNP)

BJT Model Equations (NPN and PNP)

This section describes the NPN and PNP BJT models.

Transistor Geometry in Substrate Diodes

The substrate diode is connected to either the collector or the base depending
on whether the transistor has a lateral or vertical geometry. Lateral geometry is
implied when the model parameter SUBS=-1, and vertical geometry when
SUBS=+1. The lateral transistor substrate diode is connected to the internal
base and the vertical transistor substrate diode is connected to the internal
collector. Figure 29 and Figure 30 show vertical and lateral transistor
geometries.

emitter
base
collector

buried collector

substrate

Figure 29 Vertical Transistor (SUBS =+1)

base emitter collector

substrate

Figure 30 Lateral Transistor (SUBS =-1)

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DC Model Equations

In Figure 31, the views from the top demonstrate how IBE is multiplied by
either base area, AREAB or collector area, AREAC.

substrate
C vertical B lateral transistor

E E C
Area Area AreaC

AreaB
AreaB

Figure 31 Base, AREAB, Collector, AREAC

DC Model Equations
DC model equations are for the DC component of the collector current (ic) and
the base current (ib).
Current Equations: IS Only
If you specify only IS, without IBE and IBC:
vbe vbc vbc vbc
-------------------- -------------------- -------------------- --------------------
ic = ------------ ⋅ ⎛ e NF ⋅ vt – e NR ⋅ vt⎞ – ------------ ⇒⎛ e NR ⋅ vt – 1⎞ – ISCeff ⇒⎛ e NC ⋅ vt – 1⎞
ISeff ISeff
qb ⎝ ⎠ BR ⎝ ⎠ ⎝ ⎠
vbe vbc
-------------------- --------------------
ib = ------------ ⋅ ⎛⎝ e NF ⋅ vt – 1⎞⎠ + ------------ ⇒⎛⎝ e NR ⋅ vt – 1⎞⎠
ISeff ISeff
BF BR
vbe vbc
-------------------- --------------------
+ ISEeff ⇒⎛ e NE ⋅ vt – 1⎞ + ISCeff ⋅ ⎛ e NC ⋅ vt – 1⎞
⎝ ⎠ ⎝ ⎠
Current Equations: IBE and IBC
If you specify IBE and IBC, instead of IS:

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Substrate Current Equations

vbe vbc
-------------------- --------------------
ic = ----------------- ⋅ ⎛ e NF ⋅ vt – 1⎞ – ----------------- ⇒⎛ e NR ⋅ vt – 1⎞
IBEeff IBCeff
qb ⎝ ⎠ qb ⎝ ⎠
vbec vbe
-------------------- --------------------
– ----------------- ⇒⎛⎝ e NR ⋅ vt – 1⎞⎠ – ISCeff ⇒⎛⎝ e NC ⋅ vt – 1⎞⎠
IBCeff
BR
vbe vbc
-------------------- --------------------
ib = ----------------- ⋅ ⎛⎝ e NF ⋅ vt – 1⎞⎠ + ----------------- ⇒⎛⎝ e NR ⋅ vt – 1⎞⎠
IBEeff IBCeff
BF BR
vbe vbc
-------------------- --------------------
+ISEeff ⇒⎛ e NE ⋅ vt – 1⎞ + ISCeff ⋅ ⎛ e NC ⋅ vt – 1⎞
⎝ ⎠ ⎝ ⎠

IBCeff = IBC ⋅ AREAB ⋅ M

Vertical
IBCeff = IBC ⋅ AREAC ⋅ M
Lateral
IBEeff = IBE ⋅ AREA ⋅ M
Vertical or Lateral
ISCeff = ISC ⋅ AREAB ⋅ M
Vertical
ISCeff = ISC ⋅ AREAC ⋅ M
Lateral
ISEeff = ISE ⋅ AREA ⋅ M
Vertical or Lateral
The last two base-current terms represent components, due to recombining the
base-emitter and base-collector space charge regions, at low injection.

Substrate Current Equations

The substrate current is substrate to collector for vertical transistors and
substrate to base for lateral transistors.
Vertical Transistors
vsc
-------------------
isc = ISSeff ⋅ ⎛ e NS ⋅ vt – 1⎞
⎝ ⎠

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Base Charge Equations

vsc > – 10 ⋅ NS ⋅ vt
isc = – ISSeff
vsc ≤– 10 ⋅ NS ⋅ vt
Lateral Transistors
vbs
-------------------
ibs = ISSeff ⋅ ⎛ e NS ⋅ vt – 1⎞
⎝ ⎠

vbs > – 10 ⋅ NS ⋅ vt
ibs = – ISSeff
vbs ≤– 10 ⋅ NS ⋅ vt
If you do not specify either IBE or IBC:
ISSeff = ISS ⋅ AREA ⋅ M
If you specify both IBE and IBC:
ISSeff = ISS ⋅ AREAC ⋅ M
vertical
ISSeff = ISS ⋅ AREAB ⋅ M
lateral

Base Charge Equations

VAF and VAR are, respectively, forward and reverse early voltages. IKF and
IKR determine the high-current Beta roll-off. ISE, ISC, NE, and NC determine
the low-current Beta roll-off with ic.
If UPDATE=0 or
vbe-
vbc- ----------
---------- + <0
VAF VAR
then

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Variable Base Resistance Equations

1
q1 = --------------------------------------------
⎛ 1 – ----------
vbc- ----------
–
vbe-⎞
⎝ VAF VAR⎠
Otherwise, if UPDATE=1 and
vbe-
vbc- ----------
---------- + ≥0
VAF VAR
then
vbc vbe
q1 = 1 + ----------- + -----------
VAF VAR
vbe vbc
-------------------- --------------------
q2 = ----------------- ⋅ ⎛ e NF ⋅ vt – 1⎞ + ----------------- ⋅ ⎛ e NR ⋅ vt – 1⎞
ISeff ISeff
IKFeff ⎝ ⎠ IKReff ⎝ ⎠
With IBE and IBC, the preceding equation is:
vbe vbc
-------------------- --------------------
q2 = ----------------- ⋅ ⎛ e NF ⋅ vt – 1⎞ + ----------------- ⋅ ⎛ e NR ⋅ vt – 1⎞
IBEeff IBCeff
IKFeff ⎝ ⎠ IKReff ⎝ ⎠
In the preceding equation:
■ IBE=IS if IBE=0
■
IBC=IS if IBC=0
q1
qb = ------ ⋅ [ 1 + ( 1 + 4 ⋅ q2 ) NKF ]
2

Variable Base Resistance Equations

A variable base resistance BJT model consists of a low-current maximum
resistance (set using RB), and a high-current minimum resistance (set using
RBM). IRB is the current when the base resistance is halfway to its minimum
value. If you do not specify RBM, it is set to RB.
If you do not specify IRB:
RBeff – RBMeff
rbb = RBMeff + ----------------------------------------
qb
If you specify IRB:

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tan ( z ) – z
rbb = RBMeff + 3 ⋅ ( RBeff – RBMeff ) ⋅ -----------------------------------------------
z ⋅ tan ( z ) ⋅ tan ( z )

– 1 + [ 1 + 144 ⋅ ib / ( π2 ⋅ IRBeff ) ] 1 / 2-
z = ----------------------------------------------------------------------------------------------
24 ⎛ ib ⎞ 1 / 2
------ ⋅ -----------------
π2 ⎝ IRBeff⎠

BJT Capacitance Equations

This section describes BJT capacitances.

Base-Emitter Capacitance Equations

The base-emitter capacitance contains a complex diffusion term with the
standard depletion capacitance formula. The diffusion capacitance is modified
by model parameters TF, XTF, ITF, and VTF.
Determine the base-emitter capacitance cbe by the following formula:
cbe = cbediff + cbedep
In the preceding equation, cbediff is the base-emitter diffusion, and cbedep is
the depletion capacitance.

Note: When you run a DC sweep on a BJT, use .OPTION DCCAP to

force evaluation of the voltage-variable capacitances during the
DC sweep.

Determining Base-Emitter Diffusion Capacitance

Determine diffusion capacitance as follows:
ibe ≤0
∂ ⎛ TF ⋅ ibe
--------⎞
cbediff =
∂vbe ⎝ qb ⎠
ibe > 0
∂ TF ⋅ ( 1 + argtf ) ⋅ ibe
--------
cbediff =
∂vbe qb

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The following equation calculates the argtf value for the preceding equation:
vbc
2 -----------------------------
argtf = XTF ⋅ ⎛ ------------------------⎞ ⋅ e 1.44 ⋅ VTF
ibe
⎝ ibe + ITF⎠

The forward part of the collector-emitter branch current is determined as

follows (IBE=IS if IBE=0):
vbe
--------------------
ibe = ISeff ⋅ ⎛ e NF ⋅ vt – 1⎞
⎝ ⎠

Determining Base-Emitter Depletion Capacitance

There are two different equations for modeling the depletion capacitance.
Select the proper equation by specifying .OPTION DCAP.
DCAP=1
The base-emitter depletion capacitance is determined as follows:
vbe < FC ⋅ VJE

vbe – MJE
cbedep = CJEeff ⋅ ⎛ 1 – ----------⎞
⎝ VJE⎠
vbe ≥ FC ⋅ VJE
vbe
1 – FC Þ ( 1 + MJE ) + MJE ⋅ ----------
VJE
cbedep = CJEeff ⋅ ------------------------------------------------------------------------------------
-
( 1 – FC ) ( 1 + MJE )
DCAP=2
The base-emitter depletion capacitance is determined as follows:
vbe < 0

vbe – MJE
cbedep = CJEeff ⋅ ⎛ 1 – ----------⎞
⎝ VJE⎠
vbe ≥ 0

cbedep = CJEeff ⋅ ⎛ 1 + MJE ⋅ ----------⎞

vbe
⎝ VJE⎠

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DCAP=3
Limits peak depletion capacitance to FC ⋅ CJCeff or FC ⋅ CJEeff with proper
fall-off when forward bias exceeds PB (FC ≥ 1).

Determining Base Collector Capacitance

Determine the base collector capacitance cbc as follows:
cbc = cbcdiff + cbcdep
In the preceding equation, cbcdiff is the base-collector diffusion, and cbcdep is
the depletion capacitance.

Determining Base Collector Diffusion Capacitance

∂ ( TR ⋅ ibc )
cbcdiff =
∂vbc
In the preceding equation, the internal base-collector current (ibc) is (IBC=IS
if IBC=0):
vbc
--------------------
ibc = ISeff ⋅ ⎛ e NR ⋅ vt – 1⎞
⎝ ⎠

Determining Base Collector Depletion Capacitance

There are two different equations for modeling the depletion capacitance.
Select the proper equation by specifying .OPTION DCAP.
DCAP=1
Specify DCAP=1 to select one of the following equations:
vbc < FC ⋅ VJC

vbc – MJC
cbcdep = XCJC ⋅ CJCeff ⋅ ⎛⎝ 1 – -----------⎞⎠
VJC
vbc ≥ FC ⋅ VJC
vbc
1 – FC ⇒1 ( + MJC ) + MJC ⋅ -----------
VJC
cbcdep = XCJC ⋅ CJCeff ⋅ --------------------------------------------------------------------------------------
-
( 1 – FC ) ( 1 + MJC )
DCAP=2
Specify DCAP=2 to select one of the following equations:

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vbc < 0

vbc – MJC
cbcdep = XCJC ⋅ CJCeff ⋅ ⎛ 1 – -----------⎞
⎝ VJC⎠
vbc ≥ 0

cbcdep = XCJC ⋅ CJCeff ⋅ ⎛⎝ 1 + MJC ⋅ -----------⎞⎠

vbc
VJC

External Base — Internal Collector Junction Capacitance

The base-collector capacitance is modeled as a distributed capacitance when
the model parameter XCJC is set. Since the default setting of XCJC is one, the
entire base-collector capacitance is on the internal base node cbc.
DCAP=1
Specify DCAP=1 to select one of the following equations:
vbcx < FC ⋅ VJC

vbcx –MJC
cbcx = CJCeff ⋅ ( 1 – XCJC ) ⋅ ⎛ 1 – ------------⎞
⎝ VJC ⎠
vbcx ≥ FC ⋅ VJC
vbcx
1 – FC Þ ( 1 + MJC ) + MJC ⋅ ------------
VJC-
cbcx = CJCeff ⋅ ( 1 – XCJC ) ⋅ --------------------------------------------------------------------------------------
( )
( 1 – FC ) 1 + MJC

DCAP=2
Specify DCAP=2 to select one of the following equations:
vbcx < 0
– MJC
cbcx = CJCeff ⋅ ( 1 – XCJC ) ⋅ ⎛⎝ 1 – ------------⎞⎠
vbcx
VJC
vbcx ≥ 0

cbcx = CJCeff ⋅ ( 1 – XCJC ) ⋅ ⎛ 1 + MJC ⋅ ------------⎞

vbcx
⎝ VJC ⎠
In the preceding equation, vbcx is the voltage between the external base node
and the internal collector node.

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Substrate Capacitance
The function of substrate capacitance is similar to that of the substrate diode.
To switch it from the collector to the base, set the SUBS model parameter.

Substrate Capacitance Equation: Lateral

Base to Substrate Diode
Reverse Bias vbs < 0

vbs –MJS
cbs = CJSeff ⋅ ⎛⎝ 1 – ----------⎞⎠
VJS
Forward Bias vbs ≥ 0

cbs = CJSeff ⋅ ⎛ 1 + MJS ⋅ ----------⎞

vbs
⎝ VJS⎠

Substrate Capacitance Equation: Vertical

Substrate to Collector Diode
Reverse Bias vsc < 0

vsc – MJS
csc = CJSeff ⋅ ⎛ 1 – ----------⎞
⎝ VJS⎠
Forward Bias vsc ≥ 0

csc = CJSeff ⋅ ⎛ 1 + MJS ⋅ ----------⎞

vsc
⎝ VJS⎠

Excess Phase Equation

The model parameter, PTF, models excess phase. It is defined as extra
degrees of phase delay (introduced by the BJT) at any frequency and is
determined by the equation:

excess phase = ⎛ 2 ⋅ π ⋅ PTF ⋅ ---------⎞ ⋅ ( 2 ⋅ π ⋅ f )

TF
⎝ 360⎠
In the preceding equation, f is in hertz, and you can set PTF and TF. The
excess phase is a delay (linear phase) in the transconductance generator for
AC analysis. Use it also in transient analysis.

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Defining BJT Noise Equations

Defining BJT Noise Equations

Equations for modeling BJT thermal, shot, and flicker noise are as follows.

Defining Noise Equations

The mean square short-circuit base resistance noise current equation is:

4 ⋅ k ⋅ t 1/2
inrb = ⎛ ---------------------⎞
⎝ rbb ⎠

The mean square short-circuit collector resistance noise current equation is:

4 ⋅ k ⋅ t 1/2
inrc = ⎛ ---------------------⎞
⎝ RCeff ⎠

The mean square short-circuit emitter resistance noise current equation is:

4 ⋅ k ⋅ t 1/2
inre = ⎛ ---------------------⎞
⎝ REeff ⎠

The noise associated with the base current is composed of two parts: shot
noise and flicker noise. Typical values for the flicker noise coefficient, KF, are
1e-17 to 1e-12. They are calculated as:
2 ⋅ q ⋅ fknee
In the preceding equation, fknee is the noise knee frequency (typically 100 Hz
to 10 MHz), and q is electron charge.

KF ⋅ ib AF
inb = ( 2 ⋅ q ⋅ ib ) + ⎛ --------------------------⎞
2
⎝ f ⎠
2 2 2
inb = shot noise + flicker noise

shot noise = ( 2 ⋅ q ⋅ ib ) 1 / 2

KF ⋅ ib AF 1 / 2
flicker noise = ⎛⎝ --------------------------⎞⎠
f
The noise associated with the collector current is modeled as shot noise only.

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inc = ( 2 ⋅ q ⋅ ic ) 1 / 2

Parameter Description

RB, V2/Hz output thermal noise due to base resistor

RC, V2/Hz output thermal noise due to collector resistor

RE, V2/Hz output thermal noise due to emitter resistor

IB, V2/Hz output shot noise due to base current

FN, V2/Hz output flicker noise due to base current

IC, V2/Hz output shot noise due to collector current

TOT, V2/Hz total output noise: TOT=RB + RC + RE + IB + IC + FN

BJT Temperature Compensation Equations

This section describes temperature compensation equations.

Energy Gap Temperature Equations

To determine energy gap for temperature compensation, use these equations:
TLEV =0, 1 or 3
tnom 2
egnom = 1.16 – 7.02e-4 ⋅ -----------------------------------
tnom + 1108.0

t2
eg ( t ) = 1.16 – 7.02e-4 ⋅ ------------------------
t + 1108.0
TLEV=2
tnom 2
egnom = EG – GAP1 ⋅ -----------------------------------
tnom + GAP2

t2
eg ( t ) = EG – GAP1 ⇒-----------------------
t + GAP2

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Saturation/Beta Temperature Equations, TLEV=0 or 2

The basic BJT temperature compensation equations for beta and the saturation
currents when TLEV=0 or 2 (default is TLEV=0):

t XTB
BF ( t ) = BF ⋅ ⎛ -------------⎞
⎝ tnom⎠

t XTB
BR ( t ) = BR ⋅ ⎛ -------------⎞
⎝ tnom⎠

facln
ISE - -------------
ISE ( t ) = --------------------------
XTB
⋅ e NE
⎛ ------------
t -⎞
⎝ tnom⎠

facln
ISC - -------------
ISC ( t ) = --------------------------
XTB
⋅ e NC
⎛ -------------⎞
t
⎝ tnom⎠

facln
ISS - -------------
ISS ( t ) = --------------------------
XTB
⋅ e NS
⎛ -------------⎞
t
⎝ tnom⎠

The parameter XTB usually should be set to zero for TLEV=2.

IS ( t ) = IS ⋅ e facln
facln
-------------
IBE ( t ) = IBE ⋅ e NF
facln
-------------
IBC ( t ) = IBC ⋅ e NR

TLEV=0, 1 or 3

facln = ---------------------- – ----------- + XTI ⋅ ln ⎛ -------------⎞

EG EG t
vt ( tnom ) vt ( t ) ⎝ tnom⎠
TLEV=2
eg ( t )
facln = ---------------------- – ------------ + XTI ⋅ ln ⎛ -------------⎞
egnom t
vt ( tnom ) vt ( t ) ⎝ tnom⎠

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Saturation and Temperature Equations, TLEV=1

The basic BJT temperature compensation equations for beta and the saturation
currents when TLEV=1:
BF ( t ) = BF ⋅ ( 1 + XTB ⋅ Δt )
BR ( t ) = BR ⋅ ( 1 + XTB ⋅ Δt )
facln
ISE -------------
ISE ( t ) = --------------------------------- ⋅ e NE
1 + XTB ⋅ Δt
facln
ISC -------------
ISC ( t ) = --------------------------------- ⋅ e NC
1 + XTB ⋅ Δt
facln
ISS -------------
ISS ( t ) = --------------------------------- ⋅ e NS
1 + XTB ⋅ Δt

IS ( t ) = IS ⋅ e facln
facln
-------------
IBE ( t ) = IBE ⋅ e NF
facln
-------------
IBC ( t ) = IBC ⋅ e NR
The following equation calculates the facIn value for the preceding equations:

facln = ---------------------- – ----------- + XTI ⋅ ln ⎛ -------------⎞

EG EG t
vt ( tnom ) vt ( t ) ⎝ tnom⎠
TLEV=0, 1, 2
The IKF, IKR, and IRB parameters are also modified as:
IKF ( t ) = IKF ⋅ ( 1 + TIKF1 ⋅ Δt + TIKF2 ⋅ Δt 2 )

IKR ( t ) = IKR ⋅ ( 1 + TIKR1 ⋅ Δt + TIKR2 ⋅ Δt 2 )

IRB ( t ) = IRB ⋅ ( 1 + TIRB1 ⋅ Δt + TIRB2 ⋅ Δt 2 )

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Saturation Temperature Equations, TLEV=3

The basic BJT temperature compensation equations for the saturation currents
when TLEV=3 are as follows:
2
IS ( t ) = IS ( 1 + TIS1 ⋅ Δ t + TIS2 ⋅ Δ t )
2
IBE ( t ) = IBE ( 1 + TIS1 ⋅ Δ t + TIS2 ⋅ Δ t )
2
IBC ( t ) = IBC ( 1 + TIS1 ⋅ Δ t + TIS2 ⋅ Δ t )
2
ISE ( t ) = ISE ( 1 + TISE1 ⋅ Δ t + TISE2 ⋅ Δ t )
2
ISC ( t ) = ISC ( 1 + TISC1 ⋅ Δ t + TISC2 ⋅ Δ t )
2
ISS ( t ) = ISS ( 1 + TISS1 ⋅ Δ t + TISS2 ⋅ Δ t )
The IKF, IKR, and IRB parameters are also modified as:
2
IKF ( t ) = IKF ( 1 + TIKF1 ⋅ Δ t + TIKF2 ⋅ Δ t )
2
IKR ( t ) = IKR ( 1 + TIKR1 ⋅ Δ t + TIKR2 ⋅ Δ t )
2
IRB ( t ) = IRB ( 1 + TIRB1 ⋅ Δ t + TIRB2 ⋅ Δ t )
The following model parameters will be modified only according to the following
equations whenever you specify corresponding non-zero temperature
coefficients, regardless of the TLEV value.
BF ( t ) = BF ⋅ ( 1 + TBF1 ⋅ Δt + TBF2 ⋅ Δt 2 )

BR ( t ) = BR ⋅ ( 1 + TBR1 ⋅ Δt + TBR2 ⋅ Δt 2 )

VAF ( t ) = VAF ⋅ ( 1 + TVAF1 ⋅ Δt + TVAF2 ⋅ Δt 2 )

VAR ( t ) = VAR ⋅ ( 1 + TVAR1 ⋅ Δt + TVAR2 ⋅ Δt 2 )

ITF ( t ) = ITF ⋅ ( 1 + TITF1 ⋅ Δt + TITF2 ⋅ Δt 2 )

TF ( t ) = TF ⋅ ( 1 + TTF1 ⋅ Δt + TTF2 ⋅ Δt 2 )

TR ( t ) = TR ⋅ ( 1 + TTR1 ⋅ Δt + TTR2 ⋅ Δt 2 )

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NF ( t ) = NF ⋅ ( 1 + TNF1 ⋅ Δt + TNF2 ⋅ Δt 2 )

NR ( t ) = NR ⋅ ( 1 + TNR1 ⋅ Δt + TNR2 ⋅ Δt 2 )

NE ( t ) = NE ⋅ ( 1 + TNE1 ⋅ Δt + TNE2 ⋅ Δt 2 )

NC ( t ) = NC ⋅ ( 1 + TNC1 ⋅ Δt + TNC2 ⋅ Δt 2 )

NS ( t ) = NS ⋅ ( 1 + TNS1 ⋅ Δt + TNS2 ⋅ Δt 2 )

MJE ( t ) = MJE ⋅ ( 1 + TMJE1 ⋅ Δt + TMJE2 ⋅ Δt 2 )

MJC ( t ) = MJC ⋅ ( 1 + TMJC1 ⋅ Δt + TMJC2 ⋅ Δt 2 )

MJS ( t ) = MJS ⋅ ( 1 + TMJS1 ⋅ Δt + TMJS2 ⋅ Δt 2 )

Capacitance Temperature Equations

TLEVC=0
VJE ( t )
CJE ( t ) = CJE ⋅ 1 + MJE ⋅ ⎛⎝ 4.0e-4 ⋅ Δt – ----------------- + 1⎞⎠
VJE

VJC ( t )
CJC ( t ) = CJC ⋅ 1 + MJC ⋅ ⎛ 4.0e-4 ⋅ Δt – ----------------- + 1⎞
⎝ VJC ⎠

VJS ( t )
CJS ( t ) = CJS ⋅ 1 + MJS ⋅ ⎛ 4.0e-4 ⋅ Δt – ---------------- + 1⎞
⎝ VJS ⎠

The following equations calculate values for the preceding equations:

eg ( t )
VJE ( t ) = VJE ⋅ ------------- – vt ( t ) ⇒ 3 ⋅ ln ⎛ -------------⎞ + ---------------------- – ------------
t t egnom
tnom ⎝ tnom ⎠ vt ( tnom ) vt ( t )

eg ( t )
VJC ( t ) = VJC ⋅ ------------- – vt ( t ) ⇒ 3 ⋅ ln ⎛ -------------⎞ + ---------------------- – ------------
t t egnom
tnom ⎝ tnom⎠ vt ( tnom ) vt ( t )

egnom eg ( t )
VJS ( t ) = VJS ⋅ ------------- – vt ( t ) ⇒ 3 ⋅ ln ⎛⎝ -------------⎞⎠ + ---------------------- – ------------
t t
tnom tnom vt ( tnom ) vt ( t )
TLEVC=1
CJE ( t ) = CJE ⋅ ( 1 + CTE ⋅ Δt )

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CJC ( t ) = CJC ⋅ ( 1 + CTC ⋅ Δt )

CJS ( t ) = CJS ⋅ ( 1 + CTS ⋅ Δt )
The following equations calculate the built-in potentials:
VJE ( t ) = VJE – TVJE ⇒Δt
VJC ( t ) = VJC – TVJC ⇒Δt
VJS ( t ) = VJS – TVJS ⇒Δt
TLEVC=2
VJE MJE
CJE ( t ) = CJE ⋅ ⎛⎝ -----------------⎞⎠
VJE ( t )

VJC MJC
CJC ( t ) = CJC ⋅ ⎛ -----------------⎞
⎝ VJC ( t )⎠

VJS MJS
CJS ( t ) = CJS ⋅ ⎛ ----------------⎞
⎝ VJS ( t )⎠

The following equations calculate values for the preceding equations:

VJE ( t ) = VJE – TVJE ⇒Δt
VJC ( t ) = VJC – TVJC ⇒Δt
VJS ( t ) = VJS – TVJS ⇒Δt
TLEVC=3
Δt
CJE ( t ) = CJE ⋅ ⎛ 1 – 0.5 ⇒dvjedt ⇒----------⎞
⎝ VJE⎠

Δt
CJC ( t ) = CJC ⋅ ⎛ 1 – 0.5 ⇒dvjcdt ⇒-----------⎞
⎝ VJC⎠

Δt
CJS ( t ) = CJS ⋅ ⎛⎝ 1 – 0.5 ⇒dvjsdt ⇒----------⎞⎠
VJS

VJE ( t ) = VJE + dvjedt ⋅ Δt

VJC ( t ) = VJC + dvjcdt ⋅ Δt
VJS ( t ) = VJS + dvjsdt ⋅ Δt

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If TLEV=0, 1, or 3, then:

egnom + 3 ⋅ vt ( tnom ) + ( 1.16 – egnom ) ⋅ ⎛ 2 – -------------------------------⎞ – VJC

tnom
⎝ tnom + 1108⎠
dvjcdt = – ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom

egnom + 3 ⋅ vt ( tnom ) + ( 1.16 – egnom ) ⋅ ⎛⎝ 2 – -------------------------------⎞⎠ – VJS

tnom
tnom + 1108
dvjsdt = – ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom
If TLEV=2:

egnom + 3 ⋅ vt ( tnom ) + ( EG – egnom ) ⋅ ⎛⎝ 2 – -----------------------------------⎞⎠ – VJE

tnom
tnom + GAP2
dvjedt = – ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom

egnom + 3 ⋅ vt ( tnom ) + ( EG – egnom ) ⋅ ⎛ 2 – -----------------------------------⎞ – VJC

tnom
⎝ tnom + GAP2⎠
dvjcdt = – ------------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom

egnom + 3 ⋅ vt ( tnom ) + ( EG – egnom ) ⋅ ⎛ 2 – -----------------------------------⎞ – VJS

tnom
⎝ tnom + GAP2⎠
dvjsdt = – -----------------------------------------------------------------------------------------------------------------------------------------------------------------------------
tnom

Parasitic Resistor Temperature Equations

The following equations determine the parasitic resistors as a function of
temperature regardless of the TLEV value:
RE ( t ) = RE ⋅ ( 1 + TRE1 ⋅ Δt + TRE2 ⋅ Δt 2 )

RB ( t ) = RB ⋅ ( 1 + TRB1 ⋅ Δt + TRB2 ⋅ Δt 2 )

RBM ( t ) = RBM ⋅ ( 1 + TRM1 ⋅ Δt + TRM2 ⋅ Δt 2 )

RC ( t ) = RC ⋅ ( 1 + TRC1 ⋅ Δt + TRC2 ⋅ Δt 2 )

BJT LEVEL=2 Temperature Equations

The model parameters of BJT LEVEL=2 model are modified for temperature
compensation as:

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GAMMA ( t ) = GAMMA ⋅ e ( facln )

t BEX
RC ( t ) = RC ⋅ ⎛ -------------⎞
⎝ tnom⎠

t BEXV
VO ( t ) = VO ⋅ ⎛⎝ -------------⎞⎠
tnom

BJT Quasi-Saturation Model

Use the BJT quasi-saturation model (LEVEL=2), an extension of the Gummel-
Poon model (LEVEL=1 model) to model bipolar junction transistors that exhibit
quasi-saturation or base push-out effects. When a device with lightly doped
collector regions operates at high injection levels, the internal base-collector
junction is forward biased, while the external base-collector junction is reverse
biased; DC current gain and the unity gain frequency fT falls sharply. Such an
operation regime is referred to as quasi-saturation, and its effects have been
included in this model.
Figure 32 and Figure 33 show the additional elements of the LEVEL=2 model.
The current source Iepi and charge storage elements Ci and Cx model the
quasi-saturation effects. The parasitic substrate bipolar transistor is also
included in the vertical transistor by the diode D and current source Ibs.

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S C

Cx

+ -
Vbcx
lepl
Ci

csc D + -
Ibs=BRS(ibc-isc) Vbc
isc

RB
B npn

RE

Figure 32 Vertical npn Bipolar Transistor (SUBS=+1)

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Cx

+ -
Vbcx
lepi
Ci

+ -
Vbc

RB
B npn

cbs ibs

RE

S E

Figure 33 Lateral npn Bipolar Transistor (SUBS=-1)

Epitaxial Current Source Iepi

The following equation determines the epitaxial current value, Iepi:

ki – kx – ln ⎛ ---------------⎞ + ---------------------------
1 + ki vbc – vbcx
⎝ 1 + kx⎠ NEPI ⋅ vt
Iepi = ------------------------------------------------------------------------------------
⎛ -------------------------
RCeff -⎞ ⎛ vbc – vbcx-⎞
-----------------------------
⎝ NEPI ⋅ vt⎠ ⋅ ⎝ 1 + VO ⎠

The following equations calculate values for the preceding equations:

ki = [ 1 + GAMMA ⋅ e vbc ⁄ ( NEPI ⋅ vt ) ] 1 / 2

kx = [ 1 + GAMMA ⋅ e vbcx ⁄ ( NEPI ⋅ vt ) ] 1 / 2

If you set the GAMMA model parameter to zero, then the ki and kx values both
become one, and:

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vbc – vbcx
Iepi = -------------------------------------------------------------------
RCeff ⋅ ⎛⎝ 1 + ------------------------------⎞⎠
vbc – vbcx
VO

Epitaxial Charge Storage Elements Ci and Cx

The following equations calculate the epitaxial charges:

qi = QCOeff ⋅ ⎛ ki – 1 – -----------------------⎞
GAMMA
⎝ 2 ⎠

qx = QCOeff ⋅ ⎛ kx – 1 – -----------------------⎞
GAMMA
⎝ 2 ⎠

The corresponding capacitances are calculated as:

∂ GAMMA ⋅ QCOeff
Ci = ( qi ) = ⎛⎝ --------------------------------------------------⎞⎠ ⋅ e vbc / ( NEPI ⋅ vt )
∂vbc 2 ⋅ NEPI ⋅ vt ⋅ kx

∂ ( qx ) = ⎛ GAMMA ⋅ QCOeff⎞
Cx = -------------------------------------------------- ⋅ e vbcx / ( NEPI ⋅ vt )
∂vbcx ⎝ 2 ⋅ NEPI ⋅ vt ⋅ kx ⎠
If GAMMA=0, then the Ci and Cx values become zero.
Example
This example is based on demonstration netlist quasisat.sp, which is available
in directory $<installdir>/demo/hspice/bjt:

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*quasisat.sp comparison of bjt Level1 and Level2

*model
.OPTION nomod relv=.001 reli=.001 absv=.1u absi=1p
.OPTION post
q11 10 11 0 mod1
q12 10 12 0 mod2
q21 10 21 0 mod1
q22 10 22 0 mod2
q31 10 31 0 mod1
q32 10 32 0 mod2
vcc 10 0 .7
i11 0 11 15u
i12 0 12 15u
i21 0 21 30u
i22 0 22 30u
i31 0 31 50u
i32 0 32 50u
.dc vcc 0 3 .1
.print dc vce=par('v(10)') i(q11) i(q12) i(q21)
+ i(q22) i(q31) i(q32)
.probe dc i(q11) i(q12) i(q21) i(q22)
.probe dc i(q11) i(q12)
.MODEL MOD1 NPN IS=4.0E-16 BF=75 VAF=75
+ Level=1 rc=500 SUBS=+1
.MODEL MOD2 NPN IS=4.0E-16 BF=75 VAF=75
+ Level=2 rco=500 rcc=2.599 vo=1 qco=1e-10
+ gamma=1e-9 SUBS=+1
.end

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 Chapter 5: BJT Models
Converting National Semiconductor Models

Figure 34 Comparing BJT LEVEL=1 and LEVEL=2 Models

Converting National Semiconductor Models

National Semiconductor’s SNAP circuit simulator has a scaled BJT model that
is not the same as the HSPICE BJT models. To use this model, make the
following changes.
For a subcircuit that consists of the scaled BJT model, the subcircuit name
must be the same as the name of the model. Inside the subcircuit there is
a .PARAM statement that specifies the scaled BJT model parameter values.
Put a scaled BJT model inside the subcircuit, then change the .MODEL
mname mtype statement to a .PARAM statement. Ensure that each parameter
in the .MODEL statement within the subcircuit has a value in the .PARAM
statement.

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Chapter 5: BJT Models
Defining Scaled BJT Subcircuits

Defining Scaled BJT Subcircuits

The following subcircuit definition converts the National Semiconductor scaled
BJT model to a form usable in HSPICE. The .PARAM parameter inside
the .SUBCKT represents the .MODEL parameter in the National circuit
simulator. Therefore, replace the .MODEL mname statement with a .PARAM
statement. Change the model name to SBJT.

Note: All parameter values in the following model must come from
either a .PARAM statement or the subcircuit call.

Example
The following is a subcircuit definition that converts the National Semiconductor
scaled BJT model to a form usable in HSPICE.

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 Chapter 5: BJT Models
Defining Scaled BJT Subcircuits

.SUBCKT SBJT NC NB NE SF=1 SCBC=1 SCBE=1 SCCS=1 SIES=1 SICS=1

+ SRB=1 SRC=1 SRE=1 SIC=0 SVCE=0 SBET=1
Q NC NB NE SBJT IC=SIC VCE=SVCE
.PARAM IES=1.10E-18 ICS=5.77E-18 NE=1.02 NC=1.03
+ ME=3.61 MC=1.24 EG=1.12 NSUB=0
+ CJE=1E-15 CJC=1E-15 CSUB=1E-15 EXE=0.501
+ EXC=0.222 ESUB=0.709 PE=1.16 PC=0.37
+ PSUB=0.698 RE=75 RC=0.0 RB=1.0
+ TRE=2E-3 TRC=6E-3 TRB=1.9E-3 VA=25
+ FTF=2.8E9 FTR=40E6 BR=1.5 TCB=5.3E-3
+ TCB2=1.6E-6 BF1=9.93 BF2=45.7 BF3=55.1
+ BF4=56.5 BF5=53.5 BF6=33.8
+ IBF1=4.8P IBF2=1.57N IBF3=74N
+ IBF4=3.13U IBF5=64.2U IBF6=516U
*
.MODEL SBJT NPN
+ IBE=’IES*SF*SIES’ IBC=’ICS*SF*SICS’
+ CJE=’CJE*SF*SCBE’ CJC=’CJC*SF*SCBC’
+ CJS=’CSUB*SF*SCCS’ RB=’RB*SRB/SF’
+ RC=’RC*SRC/SF’ RE=’RE*SRE/SF’
+ TF=’1/(6.28*FTF)’ TR=’1/(6.28*FTR)’
+ MJE=EXE MJC=EXC
+ MJS=ESUB VJE=PE
+ VJC=PC VJS=PSUB
+ NF=NE NR=NC
+ EG=EG BR=BR VAF=VA
+ TRE1=TRE TRC1=TRC TRB1=TRB
+ TBF1=TCB TBF2=TCB2
+ BF0=BF1 IB0=IBF1
+ BF1=BF2 IB1=IBF2
+ BF2=BF3 IB2=IBF3
+ BF3=BF4 IB3=IBF4
+ BF4=BF5 IB4=IBF5
+ BF5=BF6 IB5=IBF6
+ NSUB=0 sbet=sbet
+ TLEV=1 TLEVC=1
+ XTIR=’MC*NC’ XTI=’ME*NE’
.ENDS SBJT

The following replaces the BJT statement:

XQ1 1046 1047 8 SBJT SIES=25.5 SICS=25.5 SRC=3.92157E-2
+ SRE=3.92157E-2 SBET=3.92157E-2 SRB=4.8823E+2 SCBE=94.5234
+ SCBC=41.3745 SCCS=75.1679 SIC=1M SVCE=1

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Chapter 5: BJT Models
VBIC Bipolar Transistor Model

VBIC Bipolar Transistor Model

The VBIC (Vertical Bipolar Inter-Company) model is a bipolar transistor model.
To use VBIC, specify the LEVEL=4 parameter for the bipolar transistor model.
VBIC addresses many problems of the Gummel-Poon model:
■
More accurate modeling of Early effect
■
Parasitic substrate transistor
■
Modulation of collector resistance
■
Avalanche multiplication in collector junction, parasitic capacitances of
base-emitter overlap in double poly BJTs, and self heating.

History of VBIC
VBIC was developed by engineers at several companies. The detailed
equations for all elements are given in the referenced publication. Recent
information and source code can be found on the web site:
http://www-sm.rz.fht-esslingen.de/institute/iafgp/neu/VBIC/index.html
The HSPICE implementation complies with standard VBIC. Starting in release
2001.4 of the VBIC model, self-heating and excess phase have been
implemented or enabled.
The large signal equivalent circuit for VBIC is shown in Figure 35. Capacitors
CBCO, CBEO and resistors RCX, RBX, RE, and RS are linear elements, all other
elements of the equivalent circuit are nonlinear.

VBIC Parameters
Figure 35 lists the parameters that you can set for the model, and shows the
default values for each parameter. The same parameter names are used in the
table and the previous referenced publication.
Starting in Version 2003.03, the BJT LEVEL=4 model prints FT in the .OP
output.

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 Chapter 5: BJT Models
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CBCO Collector
Substrate

RS RCX

I Qbcp
t bcp RBIP/qBP

Iccp t
Qbep RCi
Ibep

Qbcx Qbc t Ibc/Igc

Rbx Rbi/qb
Base
Ibex Qbe Icc
t t Ibe
Qbex

CBEO Re

Figure 35 Transient Analysis

If values of parameters given by the user are beyond their ranges, those
parameters will be reset to new values and warnings will be printed unless you
set .OPTION NOWARN.

Table 60 BJT LEVEL=4 Default Model Parameters

Name (Alias) Unit Default Description

AFN 1 Flicker noise exponent for current

AJC -0.5 Base-collector capacitance switching

parameter

AJE -0.5 Base-emitter capacitance switching parameter

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Chapter 5: BJT Models
VBIC Bipolar Transistor Model

Table 60 BJT LEVEL=4 Default Model Parameters (Continued)

Name (Alias) Unit Default Description

AJS -0.5 Substrate-collector capacitance switching

parameter

AVC1 V-1 0 Base-collector weak avalanche parameter 1

AVC2 V-1 0 Base-collector weak avalanche parameter 2

BFN 1 Flicker noise exponent for 1/f dependence

CBCO (CBC0) F 0 Extrinsic base-collector overlap capacitance

CBEO (CBE0) F 0 Extrinsic base-emitter overlap capacitance

CJC F 0 Base-collector intrinsic zero bias capacitance

CJCP F 0 Substrate-collector zero bias capacitance

CJE F 0 Base-emitter zero bias capacitance

CJEP F 0 Base-collector extrinsic zero bias capacitance

CTH J/K 0 Thermal capacitance

EA eV 1.12 Activation energy for IS

EAIC eV 1.12 Activation energy for IBCI/IBEIP

EAIE eV 1.12 Activation energy for IBEI

EAIS eV 1.12 Activation energy for IBCIP

EANC eV 1.12 Activation energy for IBCN/IBENP

EANE eV 1.12 Activation energy for IBEN

EANS eV 1.12 Activation energy for IBCNP

FC 0.9 Forward bias depletion capacitance limit

GAMM 0 Epi doping parameter

HRCF 1 High-current RC factor

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Table 60 BJT LEVEL=4 Default Model Parameters (Continued)

Name (Alias) Unit Default Description

IBCI A 1e-16 Ideal base-collector saturation current

IBCIP A 0 Ideal parasitic base-collector saturation current

IBCN A 1e-15 Non-ideal base-collector saturation current

IBCNP A 0 Non-ideal parasitic base-collector saturation

current

IBEI A 1e-18 Ideal base-emitter saturation current

IBEIP A 0 Ideal parasitic base-emitter saturation current

IBEN A 1e-15 Non-ideal base-emitter saturation current

IBENP A 0 Non-ideal parasitic base-emitter saturation

current

IKF A 2e-3 Forward knee current

IKP A 2e-4 Parasitic knee current

IKR A 2e-4 Reverse knee current

IS A 1e-16 Transport saturation current

ISMIN A 1.0e-19 Parameter for extending the minimum value of

is

ISP A 1e-16 Parasitic transport saturation current

ISPMIN A 1.0e-19 Parameter for extending the minimum value of

isp

ITF A 1e-3 Coefficient of TF dependence in Ic

KFN 0 Base-emitter flicker noise constant

MC 0.33 Base-collector grading coefficient

MCMIN - 1.0d-2 Parameter for extending the minimum value of

mc

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Chapter 5: BJT Models
VBIC Bipolar Transistor Model

Table 60 BJT LEVEL=4 Default Model Parameters (Continued)

Name (Alias) Unit Default Description

ME 0.33 Base-emitter grading coefficient

MEMIN - 1.0d-2 Parameter for extending the minimum value of

me

MS 0.33 Substrate-collector grading coefficient

MSMIN - 1.0d-2 Parameter for extending the minimum value of

ms

NCI 1 Ideal base-collector emission coefficient

NCIP 1 Ideal parasitic base-collector emission

coefficient

NCN 2 Non-ideal base-collector emission coefficient

NCNP 2 Non-ideal parasitic base-collector emission

coefficient

NEI 1 Ideal base-emitter emission coefficient

NEN 2 Non-ideal base-emitter emission coefficient

NF 1 Forward emission coefficient

NFP 1 Parasitic forward emission coefficient

NR 1 Reverse emission coefficient

PC V 0.75 Base-collector built-in potential

PE V 0.75 Base-emitter built-in potential

PS V 0.75 Substrate-collector built-in potential

QCO (QC0) C 0 Epi charge parameter

QTF 0 Variation of TF with base-width modulation

RBI Ohm 1e-1 Intrinsic base resistance

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 Chapter 5: BJT Models
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Table 60 BJT LEVEL=4 Default Model Parameters (Continued)

Name (Alias) Unit Default Description

RBP Ohm 1e-1 Parasitic base resistance

RBPMIN A 1.0e-3 Parameter for extending the minimum value of

rbp.

RBX Ohm 1e-1 Extrinsic base resistance

RCI Ohm 1e-1 Intrinsic collector resistance

RCX Ohm 1e-1 Extrinsic collector resistance

RE Ohm 1e-1 Emitter resistance

RS Ohm 1e-1 Substrate resistance

RTH K/W 0 Thermal resistance

TAVC 1/K 0 Temperature coefficient of AVC2

TD s 0 Forward excess-phase delay time

TF s 1e-11 Forward transit time

TNF 1/K 0 Temperature coefficient of NF

TR s 1e-11 Reverse transit time

TREF (TNOM) o
C 27 Nominal measurement temperature of
parameters (do not use TNOM alias)

VEF V 0 Forward Early voltage

VER V 0 Reverse Early voltage

VO (V0) V 0 Epi drift saturation voltage

VTF V 0 Coefficient of TF dependence on Vbc

WBE 1 Portion of IBEI from Vbei, 1-WBE from Vbex

WSP 1 Portion of ICCP from Vbep, 1-WSP from Vbci

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VBIC Bipolar Transistor Model

Table 60 BJT LEVEL=4 Default Model Parameters (Continued)

Name (Alias) Unit Default Description

XII 3 Temperature exponent of IBEI/IBCI/IBEIP/

IBCIP

XIN 3 Temperature exponent of IBEN/IBCN/IBENP/

IBCNP

XIS 3 Temperature exponent of IS

XRB 1 Temperature exponent of base resistance

XRC 1 Temperature exponent of collector resistance

XRE 1 Temperature exponent of emitter resistance

XRS 1 Temperature exponent of substrate resistance

XTF 0 Coefficient of TF bias dependence

XVO (XV0) 0 Temperature exponent of VO

Noise Analysis
The following sources of noise are taken into account:
■
The thermal noise of resistors RBX, RCX, RE, RS, RBP, RCI, RBI
■
Shot noise of currents IBE, IBEP, ICC, ICCP
■ Flicker noise due to currents IBE, IBEP
Noise due to IBEX and IGC is not included.

Self-heating and Excess Phase

After a self-heating effect is accounted for, the device element syntax becomes:
Qxxx nc nb ne [ns][nt] mname [regular parameters][tnodeout]
In the preceding syntax, nt is the temperature node. If you specify this node,
but not ns, then you must specify the tnodeout parameter to indicate that the
fourth node is the temperature node and not the substrate node. To turn on

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 Chapter 5: BJT Models
VBIC Bipolar Transistor Model

self-heating in addition to specifying the temperature node, the RTH (thermal

resistance) model parameter must be not zero in the model card.
Excess phase affects only AC and transient characteristics analysis. To turn on
this effect, the TD (forward excess-phase delay time) model parameter must be
non-zero. But for transient analysis, turning on excess phase is not
recommended, because the model’s convergence is very sensitive to the TD
value.
Example 1
This example with a no self-heating effect is located in the following directory:
$installdir/demo/hspice/bjt/vbic.sp
Example 2
This example with self-heating effects is located in the following directory:
$installdir/demo/hspice/bjt/self_heat.sp
In the preceding example, v(t) uses the T node to print the device temperature.

Notes on Using VBIC

1. If LEVEL=4, the model is a VBIC bipolar junction transistor.
2. The LEVEL=4 model supports Area and M factor scaling.
3. Setting these parameters to zero infers a value of infinity: HRCF, IKF, IKP,
IKR, ITF, VEF, VER, VO, VTF.
4. The CBC0, CBE0, QC0, TNOM, V0, and XV0 parameters are aliases for CBCO,
CBEO, QCO, TREF, VO, and XVO, respectively. Do not use TNOM as a model
parameter name, because it is the name of the default room temperature.
5. The default room temperature is 25 degrees in HSPICE, but is 27 in some
other simulators. If you set the VBIC bipolar junction transistor model
parameters to 27 degrees, add TREF=27 to the model so that simulation
correctly interprets the model parameters.To set the nominal simulation
temperature to 27, add .OPTION TNOM=27 to the netlist. Do this when
testing HSPICE versus other simulators that use 27 as the default room
temperature.
6. Pole-zero simulation of this model is not supported.
7. For this version of implementation, all seven internal resistors should have
values greater than or equal to 1.0e-3. Values smaller than this will be
reassigned a value of 1.0e-3.

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Chapter 5: BJT Models
LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503)

LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503)

The Philips bipolar model (MEXTRAM Level 503) is the BJT LEVEL=6 model.
See also: LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504). MEXTRAM
includes effects that are not included in some other BJT models (such as in the
original Gummel-Poon model):
■
Temperature
■
Charge storage
■
Substrate
■
Parasitic PNP
■
High-injection
■
Built-in electric field in base region
■
Bias-dependent Early effect
■
Low-level, non-ideal base currents
■
Hard- and quasi-saturation
■
Weak avalanche
■
Hot carrier effects in the collector epilayer
■
Explicit modeling of inactive regions
■
Split base-collector depletion capacitance
■
Current crowding and conductivity modulation for base resistance
■ First order approximation of distributed high frequency effects in the intrinsic
base (high frequency current crowding and excess phase shift)
You can use either of the following two parameters to specify the difference
between the circuit temperature and the ambient temperatures in the
MEXTRAM model:
■
DTEMP instance parameter as specified in the element statement.
■
DTA (difference between the device temperature and the ambient analysis
temperature) global model parameter.
DTA and DTEMP both default to zero. DTEMP overrides DTA locally, if you specify
both. Simulation uses the value of DTEMP to de-rate the temperature in model
equations and other parameters.

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503)

■
If you do not specify either the DTEMP or the DTA parameter, then
DTEMP=0.0.
■ If you specify DTA but not DTEMP, then DTEMP uses the DTA value.
■
If you specify DTEMP, then simulation uses the DTEMP value, and ignores the
DTA value.
For a description of the MEXTRAM model, refer to:
http://www-us.semiconductors.com/Philips_Models/

LEVEL=6 Element Syntax

Qxxx nc nb ne [ns] [nt] mname [AREA=val]
+ [OFF] [VBE=val] [VCE=val] [M=val] [DTEMP=val] tnodeout

Qxxx nc nb ne nt mname [AREA=val]

+ [OFF] [VBE=val] [VCE=val] [M=val] [DTEMP=val] tnodeout

Parameter Description

Qxxx BJT element name. Starts with Q, followed by up to 1023

alphanumeric characters.

nc Collector terminal node name or number.

nb Base node name or number.

ne Emitter terminal node name or number.

ns Substrate node name or number.

nt Self-heating temperature node name or number. In the second form,

nt is used as a self-heating node, but no substrate node is defined.

mname BJT model name reference.

AREA Normalized emitter area.

OFF Sets initial condition to OFF for this element in DC analysis.

VBE Initial internal base to emitter voltage.

VCE Initial internal collector to emitter voltage.

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503)

Parameter Description

M Multiplier to simulate multiple BJTs in parallel (alias in an instance for

the MULT model parameter). If you use MULT, set m to zero.
■ If (MULT > 0.0 and MULT != 1.0) and (m == 1), then HSPICE uses
the MULT model parameter and displays a warning message.
■ Otherwise, HSPICE uses the m instance parameter and displays
a warning message:

MULT=1, m=1 (no warning messages)

MULT=1, m=3
MULT=2, m=3
and so on...

DTEMP Difference between element and circuit temperature.

tnodeout Identify self heating node from substrate node.

LEVEL=6 Model Parameters

This section lists MEXTRAM LEVEL=6 model parameters, including parameter
names, descriptions, units, default values, and notes.
Table 61 BJT LEVEL=6 MEXTRAM 503 Flags

Name (Alias) Unit Default Description

LEVEL - - LEVEL=6 for MEXTRAM

EXAVL - 0 Flag for extended modeling of avalanche

currents

EXMOD - 0 Flag for extended modeling of the reverse

current gain

EXPHI - 1 Flag for distributed high frequency effects

SUBS - - Flag for switching substrate effect

OUTFLAG

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Table 62 BJT LEVEL=6 MEXTRAM 503 Basic Parameters

Name (Alias) Unit Default Description

TREF οC 0.0 Model nominal temperature

IS A 5.E-17 Collector-emitter saturation current

BF A 140.0 Ideal forward current gain

XIBI - 0.0 Fraction of ideal base current that belongs to

the sidewall

IBF A 2.0E-14 Saturation current of the non-ideal forward base

current

VLF V 0.5 Cross-over voltage of the non-ideal forward

base current

IK A 15.E-3 High-injection knee current

BRI - 16.0 Ideal reverse current gain

IBR A 8.0e-15 Saturation current of the non-ideal reverse base

current

VLR V 0.5 Cross-over voltage of the non-ideal reverse

base current

XEXT - 0.5 Part of I EX,Q EX, Q TEX. and I SUB that

depends on the base-collector voltage VBC1

QBO C 1.2e-12 Base charge at zero bias

ETA - 4.0 Factor of the built-in field of the base

AVL - 50. Weak avalanche parameter

EFI - 0.7 Electric field intercept (with EXAVL=1)

IHC A 3.e-3 Critical current for hot carriers

RCC ohm 25. Constant part of the collector resistance

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503)

Table 62 BJT LEVEL=6 MEXTRAM 503 Basic Parameters (Continued)

Name (Alias) Unit Default Description

RCV ohm 750. Resistance of the unmodulated epilayer

SCRCV ohm 1000.0 Space charge resistance of the epilayer

SFH - 0.6 Current spreading factor epilayer

RBC ohm 50. Constant part of the base resistance

RBV ohm 100. Variable part of the base resistance at zero bias

RE ohm 2.0 Emitter series resistance

TAUNE s 3.e-10 Minimum delay time of neutral and emitter

charge

MTAU - 1.18 Non-ideality factor of the neutral and emitter

charge

CJE F 2.5e-13 Zero bias collector-base depletion capacitance

VDE V 0.9 Emitter-base diffusion voltage

PE - 0.33 Emitter-base grading coefficient

XCJE F 0.5 Fraction of the emitter-base depletion

capacitance that belongs to the sidewall

CJC F 1.3e-13 Zero bias collector-base depletion capacitance

VDC V 0.6 Collector-base diffusion voltage

PC - 0.4 Collector-base grading coefficient variable part

XP F 0.2 Constant part of CJC

MC - 0.5 Collector current modulation coefficient

XCJC - 0.1 Fraction of the collector-base depletion

capacitance under the emitter area

VGE V 1.01 Band-gap voltage of the emitter

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Table 62 BJT LEVEL=6 MEXTRAM 503 Basic Parameters (Continued)

Name (Alias) Unit Default Description

VGB V 1.18 Band-gap voltage of the base

VGC V 1.205 Band-gap voltage of the collector

VGJ V 1.1 Band-gap voltage recombination emitter-base

junction

VI V 0.040 Ionization voltage base dope

NA cm^-3 3.0E17 Maximum base dope concentration

ER - 2.E-3 Temperature coefficient of VLF and VLR

AB - 1.35 Temperature coefficient resistivity of the base

AEPI - 2.15 Temperature coefficient resistivity of the

epilayer

AEX - 1. Temperature coefficient resistivity of the

extrinsic base

AC - 0.4 Temperature coefficient resistivity of the buried

layer

KF - 2.E-16 Flicker noise coefficient ideal base current

KFN - 2.E-16 Flicker noise coefficient non-ideal base current

AF - 1.0 Flicker noise exponent

ISS A 6.E-16 Base-substrate saturation current

IKS A 5.E-6 Knee current of the substrate

CJS F 1.e-12 Zero bias collector-substrate depletion

capacitance

VDS V 0.5 Collector-substrate diffusion voltage

PS - 0.33 Collector-substrate grading coefficient

VGS V 1.15 Band-gap voltage of the substrate

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Table 62 BJT LEVEL=6 MEXTRAM 503 Basic Parameters (Continued)

Name (Alias) Unit Default Description

AS - 2.15 For a closed buried layer: AS=AC

For an open buried layer: AS=AEPI

Example
This example is located in the following directory:
$installdir/demo/hspice/bjt/mextram.sp

LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Level 504 of the MEXTRAM model is also available as BJT LEVEL=6 as is
Level 503 of MEXTRAM. Use the VERS parameter to choose MEXTRAM level
503 or 504. The default value of the VERS parameter is 504. See Mextram 504
Update Releases for brief descriptions of version 504 updates.
For first-order and higher-order characteristic derivatives, MEXTRAM 504
returns better results than MEXTRAM 503. This effect is noticeable in output-
conductance, cut-off frequency, and low-frequency third-order distortion.
MEXTRAM Level 504 models several effects that are not included in the
original Gummel-Poon model.
These effects include:
■
Temperature
■
Charge storage
■
Substrate
■ Parasitic PNP
■
High-injection
■
Bias-dependent early effect
■ Low-level, non-ideal base currents
■
Hard- and quasi-saturation (including Kirk Effect)
■
Weak avalanche (optionally including snap-back behavior)
■ Explicit modeling of inactive regions

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

■
Split base-collector and base-emitter depletion capacitance
■
Current crowding and conductivity modulation of the base resistance
■
First order approximation of distributed high frequency effects in the intrinsic
base (high frequency current crowding and excess phase shift)
■
Ohmic resistance of epilayer
■
Velocity saturation effects on the resistance of the epilayer
■
Recombination in the base (meant for SiGe transistors)
■
Early effects in the case of a graded bandgap (SiGe)
■
Thermal noise, shot noise, and 1/f-noise
■
Self-heating
You can use either of two parameters to specify the difference between the
circuit temperature and the ambient temperatures in the MEXTRAM model:
■
DTEMP instance parameter as specified in the element statement
■
DTA (difference between the device temperature and the ambient analysis
temperature) global model parameter.
DTA and DTEMP both default to zero. DTEMP overrides DTA locally, if you specify
both. Simulation uses the value of DTEMP to de-rate the temperature in model
equations and other parameters.
■
If you do not specify either the DTEMP or the DTA parameter, then
DTEMP=0.0.
■
If you specify DTA but not DTEMP, then DTEMP uses the DTA value.
■
If you specify DTEMP, then simulation uses the DTEMP value, and ignores the
DTA value.
This model is described at:
http://www.semiconductors.philips.com/Philips_Models/newsflashmextram504
The following topics are covered:
■
Notes on Using MEXTRAM 503 or 504 Devices
■
LEVEL=6 Model Parameters (504)
■
Mextram 504 Update Releases

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Notes on Using MEXTRAM 503 or 504 Devices

The following information applies to the HSPICE device model for the
MEXTRAM 503 or 504 device:
■
Set LEVEL=6 to identify the model as a MEXTRAM bipolar junction
transistor model.
■
Set VERS parameter to 503 to use MEXTRAM 503 and to 504 to use
MEXTRAM 504.
■
All internal resistors are limited to greater than or equal to 1.0e-6.
■
Reference temperature, TREF, is equal to 25 degrees.
■
MEXTRAM does not contain extensive geometrical or process scaling rules
(it has a multiplication factor to put transistors in parallel).
■
MEXTRAM does not contain a substrate resistance.
■
Constant overlap capacitances are not modelled within MEXTRAM.
■
MEXTRAM 504 has better convergence than 503.
■
MEXTRAM is more complex than Gummel-Poon (the computation time is
longer and the convergence is less).
■
No reverse emitter-base breakdown mechanism.
■
Models the forward current of the parasitic PNP transistor.
■
Output conductance dIc/dVce at the point where hard saturation starts
seems to be too abrupt for high current levels, compared to measurements.
■
Clarity of extrinsic current model describing Xiex and Xisub is improved by
adding an extra node and an extra contact base resistance. In this case,
parameter extraction would be more difficult.
■ Starting in Release 2002.2:
• Self-heating is now enabled for the MEXTRAM 504 model. You can use
the RTH (thermal resistance) and CTH (thermal capacitance) model
parameters, which had no effect in previous releases.
• The CBEO capacitance parameter in MEXTRAM 504 models extrinsic B-
E charge and capacitance effects. Also, the CBCO capacitance
parameter models extrinsic B-C charge and capacitance effects.
• The SUBS flag models the parasitic substrate effect when set to 1 (the
default); SUBS=0 does not model this effect. Both the MEXTRAM 503
and 504 models support the SUBS flag.

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• The MEXTRAM 504 model supports HSPICE-specific area-scaling and

multiplicity (M factor) features.
• The MEXTRAM 503 model includes KN and KFN noise parameters.
■
Starting in Release 2003.03, the Mextram BJT (LEVEL=6) model supports
Philips modelkit 4.3.
■
Starting in Release X-2005.09, support for avalanche current shot noise
source parameters Iavl_cc, Iavl_bb, and Iavl_bc was added.

LEVEL=6 Model Parameters (504)

The following tables describe MEXTRAM 504 as LEVEL=6 model parameters,
including parameter names, units, default values, descriptions, and notes.
■
TAUNE in MEXTRAM 503 acts as TAUE in the 504 model.
■
Parameters noted with an asterisk (*) are not used in the DC model.
The following parameters used in MEXTRAM 503 are deleted in MEXTRAM
504:
■ QBO ■ ETA ■ VI
■ ■ ■
NA VLF EFI
■ ■ ■
VGE ER AVL

The following parameters have been added to MEXTRAM 504:

■ ■ ■ ■
VEF TAUE AE VER
■ ■ ■ ■
TAUB DVGBF MLF TEPI
■ ■ ■ ■
DVGBR WAVL TAUR DVGTE
■ VAVL ■ DEG ■ RTH ■ AXI
■ ■
XREC CTH

Table 63 BJT LEVEL=6 MEXTRAM 504 Flags

Name (Alias) Unit Default Description

LEVEL - 6 Model level

VERS - 504 Flag for MEXTRAM model level (503 or 504)

INTVERS - 4.5 Flag for choosing 504.4 or 504.5

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Table 63 BJT LEVEL=6 MEXTRAM 504 Flags (Continued)

Name (Alias) Unit Default Description

EXMOD - 1 Flag for extended modeling, reverse current

gain

EXPHI - 1 *Flag for distributed high frequency effects in

transient

EXAVL - 0 Flag for extended modeling of avalanche

currents

TREF o
C 25.0 Reference temperature

SUBS - - Flag for switching substrate effect

Table 64 BJT LEVEL=6 MEXTRAM 504 Basic Parameters

Name (Alias) Unit Default Description

IS A 2.2e-17 Collector-emitter saturation current

VER 2.5 Reverse early voltage

VEF 44.0 Forward early voltage

BF - 215.0 Ideal forward current gain

XIBI - 0.0 Fraction of ideal base current for the sidewall

IBF A 2.7e-15 Saturation current, non-ideal forward base

current

MLF V 2.0 Non-ideal factor of non-ideal forward base

current

IK A 0.1 Collector-emitter high injection knee current

BRI - 7.0 Ideal reverse current gain

IBR A 1.0e-15 Saturation current, non-ideal reverse base

current

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Table 64 BJT LEVEL=6 MEXTRAM 504 Basic Parameters (Continued)

Name (Alias) Unit Default Description

VLR V 0.2 Cross-over voltage, non-ideal reverse base

current

XEXT - 0.63 Part of Iex, Qex, Qtex, and Isub that depends on
the base-collector voltage Vbc1

Table 65 BJT LEVEL=6 MEXTRAM 504 Avalanche Model Parameters

Name (Alias) Unit Default Description

WAVL m 1.1e-6 Epilayer thickness in weak-avalanche model

VAVL V 3.0 Voltage, determines avalanche-current

curvature

SFH - 0.3 Current spreading factor of avalanche model (if

EXAVL=1)

Table 66 BJT LEVEL=6 MEXTRAM 504 Base-Emitter Capacitances

Name (Alias) Unit Default Description

CJE F 7.3e-14 *Zero bias emitter-base depletion capacitance

VDE V 0.95 Emitter-base diffusion voltage

PE - 0.4 Emitter-base grading coefficient

XCJE - 0.4 *Sidewall portion of emitter-base depletion

capacitance

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Table 67 BJT LEVEL=6 MEXTRAM 504 Base-Collector Capacitances

Name (Alias) Unit Default Description

CJC F 7.8e-14 *Zero bias collector-base depletion capacitance

VDC V 0.68 Collector-base diffusion voltage

PC - 0.5 Collector-base grading coefficient

XP - 0.35 Constant part of CJC

MC - 0.5 Coefficient for the current modulation of the

collector-base depletion capacitance

XCJC - 3.2e-2 *Fraction of the collector-base depletion

capacitance under the emitter

Table 68 BJT LEVEL\=6 MEXTRAM 504 Transit Time Parameters

Name (Alias) Unit Default Description

MTAU - 1.0 *Non-ideality of the emitter stored charge

TAUE S 2.0e-12 *Minimum transit time of stored emitter charge

TAUB S 4.2e-12 *Transit time of stored base charge

TEPI S 4.1e-11 *Transit time of stored epilayer charge

TAUR S 5.2e-10 *Transit time, reverse extrinsic stored base

charge

DEG EV 0.0 Bandgap difference over the base

XREC - 0.0 Pre-factor of the recombination part of Ib1

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Table 69 BJT LEVEL=6 MEXTRAM 504 Temperature Parameters

Name (Alias) Unit Default Description

AQBO - 0.3 Temperature coefficient, zero-bias base charge

AE - 0.0 Temperature coefficient of emitter resistivity

AB - 1.0 Temperature coefficient of resistivity of base

AEPI - 2.5 Temperature coefficient of resistivity of epilayer

AEX - 0.62 Temperature coefficient of resistivity, extrinsic

base

AC - 2.0 Temperature coefficient of resistivity, buried

layer

ATH - 0 Temperature coefficient of the thermal

resistance

DVGBF V 5.0e-2 Bandgap voltage difference, forward current

gain

CVGBR V 4.5e-2 Bandgap voltage difference, reverse current

gain

VGB V 1.17 Bandgap voltage of the base

VGC V 1.18 Bandgap voltage of the collector

VGJ V 1.15 Recombined bandgap voltage, emitter-base

junction

DVGTE V 0.05 *Bandgap voltage difference, emitter stored

charge

DAIS - 0 Parameter for fine tuning of temperature

dependence for collector-emitter saturation
current

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Table 70 BJT LEVEL=6 MEXTRAM 504 Noise Parameters

Name (Alias) Unit Default Description

AF - 2.0 Exponent of the flicker-noise

KAVL - 0 Switch for white noise contribution due to

avalanche

KF - 2.0e-11 Flicker-noise coefficient for ideal base current

KFN - 2.0e-11 Flicker-noise coefficient, non-ideal base current

Table 71 BJT LEVEL=6 MEXTRAM 504 Substrate Parameters

Name (Alias) Unit Default Description

ISS A 4.8e-17 Base-substrate saturation current

IKS A 2.5e-4 Base-substrate high injection knee current

CJS F 3.15e-13 *Zero bias collector-substrate depletion

capacitance

VDS V 0.62 *Collector-substrate diffusion voltage

PS - 0.34 *Collector-substrate grading coefficient

VGS V 1.2 Bandgap voltage of the substrate

AS - 1.58 For a closed buried layer: AS=AC

For an open buried layer: AS=AEPI

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Table 72 BJT LEVEL=6 MEXTRAM 504 Self-Heating Parameters

Name (Alias) Unit Default Description

RTH o
C/W 0 Thermal (self-heating) resistance

CTH J/oC 0 Thermal (self-heating) capacitance

Table 73 BJT LEVEL=6 MEXTRAM 504 Extrinsic Capacitance Parameters

Name (Alias) Unit Default Description

CBEO F 0 extrinsic Base-Emitter capacitance

CBCO F 0 extrinsic Base-Collector capacitance

BJT LEVEL=6 MEXTRAM 504 DC OP Analysis Example

This example is located in the following directory:
$installdir/demo/hspice/bjt/mextram_dc.sp
BJT LEVEL=6 MEXTRAM 504 Transient Analysis Example
This example is located in the following directory:
$installdir/demo/hspice/bjt/mextram_tran.sp
BJT LEVEL=6 MEXTRAM 504 AC Analysis Example
This example is located in the following directory:
$installdir/demo/hspice/bjt/mextram_ac.sp

Table 74 BJT LEVEL=6 MEXTRAM504 Noise Parameters

Name Unit Default Description

BTJE AV-2 0 Pre-factor of the base-emitter tunneling current

ALB V 0 Exponential coefficient for the base-emitter

tunneling current

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Table 74 BJT LEVEL=6 MEXTRAM504 Noise Parameters (Continued)

Name Unit Default Description

ABT - 0 Temperature coefficient of the base-emitter

tunneling current parameter

AET - 0 Temperature coefficient for the base-emitter

tunneling current parameter

Table 75 BJT LEVEL=6 MEXTRAM 504 Output Templates

Name Alias Description

VB2E1 LX26 Internal base-emitter bias

VB2C2 LX27 Internal base-collector bias

VB2C1 LX28 Internal base-collector bias including epilayer

VB1 C1 LX29 External base-collector bias without contact resistances

VE1E LX30 Bias over emitter resistance

IN LX31 Main current

IC1C2 LX32 Epilayer current

IB1B2 LX33 Pinched base current

IB1 LX34 Ideal forward base current

ISB1 LX35 Ideal side-wall base current

IB2 LX36 Non-ideal forward base current

IB3 LX37 Non-ideal reverse base current

IBET LX38 Base-emitter tunneling current

IAVL LX39 Avalanche current

IEX LX40 Extrinsic reverse base current

XIEX LX41 Extrinsic reverse base current

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Table 75 BJT LEVEL=6 MEXTRAM 504 Output Templates (Continued)

Name Alias Description

XISUB LX42 Substrate current

ISF LX43 Substrate failure current

IRE LX44 Current through emitter resistance

IRBC LX45 Current through constant base resistance

IRCC LX46 Current through constant collector resistance

QE LX47 Emitter charge or emitter neutral charge

QTE LX48 Base-emitter depletion charge

QSTE LX49 Sidewall base-emitter depletion charge

QTC LX50 Base-collector depletion charge

QEPI LX51 Epilayer diffusion charge

QB1B2 LX52 AC current crowding charge

QTEX LX53 Extrinsic base-collector depletion charge

XQTEX LX54 Extrinsic base-collector depletion charge

QEX LX55 Extrinsic base-collector diffusion charge

XQEX LX56 Extrinsic base-collector diffusion charge

QTS LX57 Collector-substrate depletion charge

GX LX58 Forward transconductance

GY LX59 Reverse transconductance

GZ LX60 Reverse transconductance

GSPI LX61 Conductance side-wall base-emitter junction

GPIX LX62 Conductance floor base-emitter junction

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Table 75 BJT LEVEL=6 MEXTRAM 504 Output Templates (Continued)

Name Alias Description

GPIY LX63 Early effect on recombination base current

GPIZ LX64 Early effect on recombination base current

GMUX LX65 Early effect on avalanche current limiting

GMUY LX66 Conductance of avalanche current

GUMZ LX67 Conductance of avalanche current

GMUEX LX68 Conductance of extrinsic base-collector junction

XGMUEX LX69 Conductance of extrinsic base-collector junction

GRCVY LX70 Conductance of epilayer current

GRCVZ LX71 Conductance of epilayer current

RBV LX72 Base resistance

GRBVX LX73 Early effect on base resistance

GRBVY LX74 Early effect on base resistance

GRBVZ LX75 Early effect on base resistance

RE LX76 Emitter resistance

RBC LX77 Constant base resistance

RCC LX78 Constant collector resistance

GS LX79 Conductance parasitic PNP transistor

XGS LX80 Conductance parasitic PNP transistor

GSF LX81 Conductance substrate failure current

CSBE LX82 Capacitance sidewall base-emitter junction

CBEX LX83 Capacitance floor base-emitter junction

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Table 75 BJT LEVEL=6 MEXTRAM 504 Output Templates (Continued)

Name Alias Description

CBEY LX84 Early effect on base-emitter diffusion charge

CBEZ LX85 Early effect on base-emitter diffusion charge

CBCX LX86 Early effect on base-collector diffusion charge

CBCY LX87 Capacitance floor base-collector junction

CBCZ LX88 Capacitance floor base-collector junction

CBCEX LX89 Capacitance extrinsic base-collector junction

XCBCEX LX90 Capacitance extrinsic base-collector junction

CB1B2 LX91 Capacitance AC current crowding

CB1B2X LX92 Cross-capacitance AC current crowding

CB1B2Y LX93 Cross-capacitance AC current crowding

CB1B2Z LX94 Cross-capacitance AC current crowding

CTS LX95 Capacitance substrate-collector junction

GOUT LX96 Output conductance

GMU LX97 Feedback transconductance

CBE LX98 Base-emitter capacitance

CBC LX99 Base-collector capacitance

IQS LX100 Current at onset of quasi-saturation

XIWEPI LX101 Thickness of injection layer

VB2C2STA LX102 Physical value of internal base-collector bias

PDISS LX103 Dissipation

TK LX104 Actual temperature

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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Table 75 BJT LEVEL=6 MEXTRAM 504 Output Templates (Continued)

Name Alias Description

ISUBO LX105 Substrate current

QBEI LX106 Base-emitter diffusion charge

QBCI LX107 Base- collector diffusion charge

Mextram 504 Update Releases

See the The following upgrades were made to the Mextram 504 model:
■
Mextram 504, version 3 (504.3)
• MULT has been moved in list of parameters
• Lower clipping value of Tref changed to -273 °C

• Added I C , I B and β dc to operating point information

■ Mextram 504, version 4 (504.4): Noise of collector epilayer has been
removed
■
Mextram 504, version 5 (504.5)
• Addition of temperature dependence of thermal resistance
• Addition of noise due to avalanche current
■
Mextram 504, version 6 (504.6)
• Added parameter dA lS for fine tuning of temperature dependence of IsT

• “GEM = 0" added to equation (4.66)

• Upper clipping value 1.0 of Kavl introduced
■
Mextram 504, version 7 (504.7)
• Added resistances of buried layer RCblx and RCbli, and their temperature
scaling parameter ACbl.
• Lower clipping value of resistances RE, RBC, RBV, RCc, RCv, SCRCv
increased to 1m Ω

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 Chapter 5: BJT Models
LEVEL=8 HICUM Model

• Bug fix high temperature limit B nT

■
Mextram 504, version 8 (504.8)
• Zener tunneling current in emitter-base junction— Parameters: IzEBand
NzEB.
• Material constants, implemented as parameters: VgzEB, AVgzEB, and
TVgEB.
For detailed description of Mextram updates go to: http://mextram.ewi.tudelft.nl

LEVEL=8 HICUM Model

The HIgh CUrrent Model (HICUM) is an advanced transistor model for bipolar
transistors with a primary emphasis on circuit design for high-speed/high-
frequency applications. HICUM development was spurred by the SPICE
Gummel-Poon model’s (SGPM) inadequate level of accuracy for high-speed,
large-signal transient applications and the required high-collector current
densities. Other major disadvantages of the SGPM are:
■ A lack of sufficient physical background
■
Poor descriptions of base resistance and junction capacitances in the
regions of interest
■ Inadequate description of both Si- and III-V material-based HBTs.
The HICUM model is implemented as LEVEL=8 in the BJT models.
These topics are covered in the following sections:
■
HICUM Model Advantages
■
HSPICE HICUM Model vs. Public HICUM Model
■
LEVEL=8 Element Syntax
■
LEVEL=8 Model Parameters

HICUM Model Advantages

Major features of HICUM are:

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Chapter 5: BJT Models
LEVEL=8 HICUM Model

■
Accurate description of the high-current operating region (including quasi-
saturation and saturation).
■ Distributed modelling of external base-collector region.
■
Proper handling of emitter periphery injection and charge storage.
■
Internal base resistance as a function of operating point (conductivity
modulation and emitter current crowding), and emitter geometry.
■
Sufficiently physical model equations allowing predictions of temperature
and process variations, as well as scalability, even at high current densities.
■
Parasitic capacitances, independent on operating point, are available in the
equivalent circuit, representing base-emitter and base-collector oxide
overlaps, that become significant for small-size transistors.
■
Weak avalanche breakdown is available.
■
Self-heating effects are included. Non-quasi-static effects, resulting in a
delay of collector current AND stored minority charge, are modelled as
function of bias.
■
Collector current spreading is included in minority charge and collector
current formulation.
■
Extensions for graded-base SiGe HBTs have been derived using the
Generalized Integral Charge-Control Relation (GICCR); the GICCR also
permits modelling of HBTs with (graded) bandgap differences within the
junctions.
■
Base-emitter tunneling model is available (for example, for simulation of
varactor leakage).
■
Simple parasitic substrate transistor is included in the equivalent circuit.
■
Simple parallel RC network taking into account the frequency dependent
coupling between buried layer and substrate terminal.
■
Parameter extraction is closely related to the process enabling parametric
yield simulation; parameter extraction procedure and list of test structures
are available; HICUM parameters can be determined using standard
measurement equipment and mostly simple, decoupled extraction
procedures.
■
Simple equivalent circuit and numerical formulation of model equations
result in easy implementation and relatively fast execution time.

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 Chapter 5: BJT Models
LEVEL=8 HICUM Model

■
Vertical NQS effects have been implemented in HICUM through “additional
delay times” for both minority charge and forward transfer current.
■ The correlation between base and collector noise is included in the HICUM
compact model.
If you use these features with easily-measurable basic variables (such as
junction capacitances and transit time), the results are more accurate than if
you use SGPM. This improved accuracy applies to digital circuit, small-signal
high-frequency, and especially high-speed large-signal transient simulation.
Also, you can laterally scale HICUM over a wide range of emitter widths and
lengths, up to high collector current densities. The scaling algorithm is generic,
and has been applied to the SGPM (within its validity limits).
In summary, HICUM’s major advantages over other bipolar compact models
are:
■
Scalability
■
Process-based and relatively simple parameter extraction
■
Predictive capability in terms of process and layout variations
■
Fairly simple numerical formulation facilitating easy implementation and
resulting in still reasonable simulation time compared to the (too) simple
SGPM at high current densities

HSPICE HICUM Model vs. Public HICUM Model

The HSPICE LEVEL=8 model is based on version 2.2 of the public HICUM
model. There are two versions: version 2.1 and 2.2.
■
Version 2.1, based on the Technology University of Dresden’s HICUM
standalone model kit source code
■ Version 2.2, based on the Technology University of Dresden’s HICUM
Verilog-A code (current version 2.24)
To maintain flexibility, the LEVEL=8 HICUM model uses IS, MCF, and ZETACX
as additional model parameters. For more information on these parameters,
see Table 100 on page 261.
For a complete description of HICUM model, see
http://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_doc.html

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Chapter 5: BJT Models
LEVEL=8 HICUM Model

LEVEL=8 Element Syntax

This section provides the syntax for BJT LEVEL=8, and an example of an input
netlist and output format.
Syntax
Qxxx nc nb ne ns> <nt> mname[area] [M=val] [DTEMP=val]
+ [tnodeout]

Parameter Description

Qxxx BJT element name

nc Collector terminal node

nb Base terminal node, connected to 1 => 2

ne Emitter terminal node, connected to 1 => 0

ns Substrate terminal node

nt Temperature node

mname BJT model name reference

area Emitter area multiplying factor. Affects current, resistance, capacitance.

The default is 1.

M Multiplier to simulate multiple BJTs in parallel. The default is 1.

DTEMP Difference between the element temperature and the circuit temperature in
degrees Celsius. The default is 0.0.

tnodeout Identify self heating node from substrate node.

Example
The following is an example of a BJT Q1 model:
Q1 1 2 0 4 QM area=1*0.5*5 dtemp=0.002

The preceding example includes the following connections:

■
Collector is connected to node 1.
■
Base is connected to node 2.

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 Chapter 5: BJT Models
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■
Emitter is connected to node 0.
■
Substrate is connected to node 4.
■
QM references the name of the BJT model.

HICUM LEVEL=2 Circuit Diagram

rsu

² ² ² ² S
CjS Ø
iTS
Csu rCx
ijSC C’ C
² ² ² ² ² ² ² ²
ijBCx CdS ijBCi iAVL
C’BCx C”BCx CjCi CdC
CrBi Ø

B B* B’ Ø
² ² ² ² ² ² ² ² iT
rBx CjEp *
Ø rBi CjEi CdE
CEox
ijBEp iBEt ijBEi
² ² ² ² ²
E’
Tj
rE
²
Ø
P Rth Cth
²
E ²
(a) (b)
Notes:
(a) The external BC capacitance consists of a depletion and a bias-independent capacitance (for example,
oxide) capacitance with the ratio C’BCx / C”BCx being adjusted with respect to proper modeling of the HF
behavior.
(b) Thermal network used for self-heating calculation.

Figure 36 Large-signal HICUM LEVEL=2 equivalent circuit

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LEVEL=8 HICUM Model

Input Netlist
.DATA test_data vbe vce vsub
0.0 0.0 0.0
0.1 0.0 0.0
0.2 0.0 0.0
0.3 0.0 0.0
0.4 0.0 0.0
0.5 0.0 0.0
0.6 0.0 0.0
0.7 0.0 0.0
0.8 0.0 0.0
0.9 0.0 0.0
1.0 0.0 0.0
.ENDDATA

.OPTION
.TEMP 26.85
VIN 2 0 vbe
VC 1 0 vce
VS 4 0 vsub
VE 3 0 0
Q1 1 2 3 4 hicum
.DC data=test_data
.PRINT DC I(VIN) i2(q1) I(VC) i1(q1) I(VCS) i4(q1)
.MODEL hicum NPN Level=8
+ tref =26.85
+ c10=.3760000E-31 qp0=.2780000E-13 ich=.2090000E-01
+ hfc=.1000000E+01
+ hfe=1.0000000E+00 hjei=.000000E+00
+ hjci=.100000E+01 tr=1.00000000E-9
+ cjei0=.81100E-14 vdei=.950000E+00 zei=.5000000E+00
+ aljei=.18000E+01
+ cjci0=.11600E-14 vdci=.800000E+00 zci=.3330000E+00
+ vptci=.41600E+03
+ rci0=.127800E+03 vlim=.700000E+00 vpt=.5000000E+01
+ vces=.100000E+00
+ t0=.47500000E-11 dt0h=.210000E-11 tbvl=.400000E-11
+ tef0=.180000E-11 gtfe=.140000E+01 thcs=.300000E-10
+ alhc=.750000E+00
+ fthc=.600000E+00
+ latb=.376500E+01 latl=.342000E+00 fqi=.9055000E+00
+ alit=.450000E+00 alqf=.225000E+00
+ favl=.118600E+01 qavl=.111000E-13 alfav=.82500E-04
+ alqav=.19600E-03
+ ibeis=.11600E-19 mbei=.101500E+01 ibeps=.10000E-29
+ mbep=.200000E+01
+ ireis=.11600E-15 mrei=.200000E+01 ireps=.10000E-29
+ mrep=.200000E+01

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+ rbi0=.000000E+00 fdqr0=.00000E+00 fgeo=.730000E+00

+ fcrbi=.00000E+00
+ cjep0=.00000E+00 vdep=.105000E+01 zep=.4000000E+00
+ aljep=.24000E+01
+ ceox=.000000E+00
+ cjcx0=.00000E+00 vdcx=.700000E+00 zcx=.3330000E+00
+ vptcx=.10000E+03
+ ccox=.000000E+00 fbc=.1526000E+00
+ ibcxs=.10000E-29 mbcx=.200000E+01 ibcis=.11600E-19
+ mbci=.101500E+01
+ cjs0=.000000E+00 vds=.6000000E+00 zs=.44700000E+00
+ vpts=.100000E+04
+ rcx=.0000000E+00 rbx=.0000000E+00 re=.00000000E+00
+ kf=.00000000E+00 af=.00000000E+00
+ vgb=.1170000E+01 alb=.6300000E-02 alt0=.000000E+00
+ kt0=.0000000E+00
+ zetaci=.1600E+01 alvs=.100000E-02 alces=.40000E-03
+ zetarbi=0.5880E+00 zetarcx=0.2230E+00
+ zetarbx=0.2060E+00 zetare=0.0000E+00
+ rth=0.0 cth=0.0
+ ibets=.00000E+00 abet=.000000E+00
+ itss=.000000E+00 msf=.0000000E+00 tsf=0.000000E+00
+ iscs=.000000E+00
+ msc=.0000000E+00
+ rsu=.0000000E+00 csu=.0000000E+00
.END

LEVEL=8 Model Parameters

This section lists the HICUM LEVEL=8 model parameters, internal transistor
parameters, peripheral element parameters, and external element parameters
for version 2.1. The parameters for version 2.2 include those of version 2.1 and
new parameters listed in Table 77. This includes parameter names,
descriptions, units, default values, factors, and notes.
Table 76 BJT LEVEL=8 Model Parameters

Name (Alias) Unit Default Description

LEVEL - 8 HICUM BJT level

TREF C 26.85 Temperature in simulation

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Table 76 BJT LEVEL=8 Model Parameters (Continued)

Name (Alias) Unit Default Description

SYNOPSYS_UPDATE - 1 Flag for bug fixing.

■
1: bug fixed by Synopsys
■
0: no bug fix

CDCI_UPDATE 1 Flag for CDCI equation; This flag can be used

for SYNOPSY_UPDATE = 1
■ 1=latest equation
■
0=old equation

VERSION - 2.24 HICUM version

Table 77 BJT LEVEL=8 Parameters Added in Version 2.2

Name Unit Default Factor Description

FLSH - 0 M Self-heating flag, also has instance parameter. If

FLSH is not 0 and RTH>0, ON; otherwise OFF.

TUNODE - 1 Tunneling flag (1=on peripheral node; 0=on

internal node)

TBHREC ps 0 BC recombination time constant at the BC

barrier for high forward injection

FBEPAR - 0 Partitioning factor of parasitic BE capacitance

CBEPAR - 1.0 Total parasitic BE capacitance (spacer and

metal)

VGE V 1.17 Effective emitter bandgap voltage VgEeff

VGC V 1.17 Effective collector bandgap voltage VgCeff

VGS V 1.17 Effective substrate bandgap voltage VgSeff

F1VG V/K 1.02377e-4 Coefficient K1 in T dependent bandgap

equation

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Table 77 BJT LEVEL=8 Parameters Added in Version 2.2 (Continued)

Name Unit Default Factor Description

F2VG V/K 4.3215e-4 Coefficient K2 in T dependent bandgap

equation

ZETABET - 5 Exponent coefficient in BE junction current

temperature dependence

ZETACT - 4.5 Exponent coefficient in transfer current

temperature dependence

Internal Transistors
This section lists the HICUM LEVEL=8 internal transistor parameters. This
includes parameter names, descriptions, units, default values, factors, and
notes.

Table 78 BJT LEVEL=8 Transfer Current Parameters

Name (Alias) Unit Default Factor Description

C10 A2s 2e-30 M2 Constant. The IS setting determines the C10

parameter value. If IS > 0, then C10=IS * QP0;
otherwise, C10=C10. IS=1.0e-16; C10=2.0e-30.

QP0 As 2e-14 Zero-bias hole charge

ICH A 1e+20 High-current correction for 2D/3D

HFC - 1 Weighting factor for Qfc (mainly for HBTs)

HFE - 1 Weighting factor for Qef in HBTs

HJCI - 1 Weighting factor for Qjci in HBTs

HJEI - 1 Weighting factor for Qjei in HBTs

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Table 79 BJT LEVEL=8 BE Depletion Capacitance Parameters

Name (Alias) Unit Default Factor Description

VDEI V 0.9 Built-in voltage

CJEI0 F 0 Zero-bias value

ZEI - 0.5 Exponent coefficient

ALJEI (AJEI) - 2.5 Ratio of max. to zero-bias value

Table 80 BJT LEVEL=8 BC Depletion Capacitance Parameters

Name (Alias) Unit Default Factor Description

ALJEP (AJEP) - 2.5 Ratio of max. to zero-bias value

CJCI0 F 0 M Zero-bias value

VDCI V 0.7 Built-in voltage

ZCI - 0.4 Exponent coefficient

VPTCI V 1e+20 Punch-through voltage (=q Nci w^2ci /

(2epsilion))

Table 81 BJT LEVEL=8 Forward Transit Time Parameters

Name (Alias) Unit Default Factor Description

T0 s 0 Low current transit time at VBC=0

DT0H s 0 Time constant for base and BC SCR width

modulation

TBVL s 0 Voltage for modeling carrier jam at low VC'E'

TEF0 s 0 Storage time in neutral emitter

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Table 81 BJT LEVEL=8 Forward Transit Time Parameters (Continued)

Name (Alias) Unit Default Factor Description

GTFE - 1 Exponent factor for current dep. emitter transit

time

THCS s 0 Saturation time constant at high current densities

ALHC - 0.1 Smoothing factor for current dep. C and B transit

time

FTHC - 0 Partitioning factor for base and collection portion

ALQF - 0 Factor for additional delay time of Q_f

FLNQS - 0 NQS flag (NQS supported in V2.23); also has

instance parameter

Table 82 BJT LEVEL=8 Critical Current Parameters

Name (Alias) Unit Default Factor Description

RCI0 Ohm 150 1/M Low-field resistance of internal collector region

VLIM V 0.5 Voltage separating ohmic and SCR regime

VPT V 1e+20 Epi punch-through vtg. of BC SCR

VCES V 0.1 Internal CE sat. vtg.

Table 83 BJT LEVEL=8 Inverse Transit Time Parameter

Name (Alias) Unit Default Factor Description

TR s 0 Time constant for inverse operation

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Table 84 BJT LEVEL=8 Base Current Component Parameters

Name (Alias) Unit Default Factor Description

IBEIS A 1e-18 M BE saturation current

MBEI - 1 BE saturation current

IREIS A 0 M BE recombination saturation current

MREI - 2 BE recombination non-ideality factor

TBHREC ps 0 BC recombination time constant at the BC barrier

for high forward injection

IBCIS A 1e-16 M BC saturation current

MBCI - 1 BC non-ideality factor

Table 85 BJT LEVEL=8 Weak BC Avalanche Breakdown Parameters

Name (Alias) Unit Default Factor Description

FAVL 1/V 0 Prefactor for CB avalanche effect

QAVL C 0 M Exponent factor for CB avalanche effect

Table 86 BJT LEVEL=8 Internal Base Resistance Parameters

Name (Alias) Unit Default Factor Description

RBI0 Ohm 0 1/M Value at zero-bias

RBX Ohm 0 1/M External base series resistance

FGEO - 0.6557 Geometry factor (corresponds to long emitter

stripe)

FDQR0 - 0 Correction factor for BE and BC SCR modulation

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Table 86 BJT LEVEL=8 Internal Base Resistance Parameters (Continued)

Name (Alias) Unit Default Factor Description

FCRBI - 0 Ratio of HF shunt to total internal capacitance.

FQI - 1.0 Ratio of internal to total minority charge

RE Ohm 0 1/M Emitter series resistance

RCX Ohm 0 1/M External collector series resistance

Table 87 BJT LEVEL=8 Lateral Scaling

Name (Alias) Unit Default Factor Description

LATB - 0 Scaling factor for Qfc in l_E (“I” is the letter L—not
the number 1)

LATL - 0 Scaling factor for Qfc in l_E direction (“I” is the

letter L—not the number 1)

Peripheral Elements
This section lists the HICUM LEVEL=8 model peripheral element parameters.
This includes parameter names, descriptions, units, default values, factors, and
notes.
Table 88 BJT LEVEL=8 BE Depletion Capacitance

Name (Alias) Unit Default Factor Description

CJEP0 F 0 M Zero-bias value

VDEP V 0.9 Built-in voltage

ZEP - 0.5 Depletion coeff

ALJEP - 2.5 Ratio of max. to zero-bias value

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Table 89 BJT LEVEL=8 Base Current

Name (Alias) Unit Default Factor Description

IBEPS A 0 M Saturation current

MBEP - 1 Non-ideality factor

IREPS A 0 M Recombination saturation factor

MREP - 2 Recombination non-ideality factor

Table 90 BJT LEVEL=8 BE Tunneling

Name (Alias) Unit Default Factor Description

IBETS A 0 M Saturation current

ABET - 40 Exponent coefficient

TUNODE - 1 Tunneling flag (1=on peripheral node; 0=on

internal node)

External Elements
This section lists the HICUM LEVEL=8 model external element parameters.
This includes parameter names, descriptions, units, default values, factors, and
notes.

Table 91 BJT LEVEL=8 BC Capacitance

Name (Alias) Unit Default Factor Description

CJCX0 F 0 M Zero-bias depletion value

VDCX V 0.7 Built-in voltage

ZCX - 0.4 Exponent coefficient

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Table 91 BJT LEVEL=8 BC Capacitance (Continued)

Name (Alias) Unit Default Factor Description

VPTCX V 1e+20 Punch-through voltage

CCOX (CBCPAR) F 0 M Collector oxide capacitance

FBC (FDCPAR) - 0 Partitioning factor for C_BCX

=C’_BCx+C”_BCx

CBEPAR - 1.0 Total parasitic BE capacitance (spacer and

metal)

FBEPAR - 0 Partitioning factor of parasitic BE

capacitance

Table 92 BJT LEVEL=8 BC Base Current Component

Name (Alias) Unit Default Factor Description

IBCXS A 0 M Saturation current

MBCX - 1 Non-ideality factor

Table 93 BJT LEVEL=8 Other External Elements

Name (Alias) Unit Default Factor Description

RBX Ohm 0 1/M External base series resistance

RE Ohm 0 1/M Emitter series resistance

RCX Ohm 0 1/M External collector series resistance

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Table 94 BJT LEVEL=8 Substrate Transistor Parameters

Name (Alias) Unit Default Factor Description

ITSS A 0 M Transfer saturation current

MSF - 1 Non-ideality factor (forward transfer current)

TSF s 0 Minority charge storage transit time

ISCS A 0 M Saturation current of CS diode

MSC - 1 Non-ideality factor of CS diode

Table 95 BJT LEVEL=8 Collector-Substrate Depletion Capacitance

Name (Alias) Unit Default Factor Description

CJS0 F 0 M Zero-bias value of CS depletion cap

VDS V 0.6 Built-in voltage

ZS - 0.5 Exponent coefficient

VPTS V 1e+20 Punch-through voltage

Table 96 BJT LEVEL=8 Substrate Coupling Network

Name (Alias) Unit Default Factor Description

RSU Ohm 0 1/M Substrate series resistance

CSU F 0 Substrate capacitance from permittivity of bulk

material

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Table 97 BJT LEVEL=8 Noise Parameters

Name (Alias) Unit Default Factor Description

KF - 0 M1-AF Flicker noise factor (no unit only for AF=2!)

AF - 2 Flicker noise exponent factor

Table 98 BJT LEVEL=8 Temperature Dependence Parameters

Name (Alias) Unit Default Factor Description

VGB V 1.17 Bandgap voltage

F1VG V/K 1.02377e-4 Coefficient K1 in T dependent bandgap

equation

F2VG V/K 4.3215e-4 Coefficient K2 in T dependent bandgap

equation

ZETACT - 4.5 Exponent coefficient in transfer current

temperature dependence

VGE V 1.17 Effective emitter bandgap voltage VgEeff

ZETABET - 5 Exponent coefficient in BE junction current

temperature dependence

VGC V 1.17 Effective collector bandgap voltage VgCeff

VGS V 1.17 Effective substrate bandgap voltage VgSeff

ALT0 1/K 0 First-order relative temperature coefficient,

TEF0

KT0 1/K2 0 Second-order relative temperature

coefficient, TEF0

ALVS 1/K 0 Relative temperature coefficient of saturation

drift velocity

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Table 98 BJT LEVEL=8 Temperature Dependence Parameters (Continued)

Name (Alias) Unit Default Factor Description

ALCES 1/K 0 Relative temperature coefficient of VCES

ZETARBI - 0 Temperature exponent factor of RBI0

ZETARBX - 0 Temperature exponent factor of RBX

ZETARCX - 0 Temperature exponent factor of RCX

ZETARE - 0 Temperature exponent factor of RE

ALFAV 1/K 0 Relative temperature coefficient for

avalanche breakdown

ALQAV 1/K 0 Relative temperature coefficient for

avalanche breakdown

To use the self-heating HICUM feature (in BJT LEVEL=8), set VERS=2.1 and
set an RTH parameter value other than 0. If you use vers=2.0 or RTH=0, then
self-heating is OFF.
The self-heating effect also applies to the circuit temperature as an increased
self-heating temperature. T=Tckt(circuit temperature) + Tsh(self heating
temperature) + dtemp (difference between circuit temperature and ambient
temperature).

Table 99 BJT LEVEL=8 Self-Heating Parameters

Name (Alias) Unit Default Factor Description

RTH K/W 0 1/M Thermal resistance (not supported in v2000.4)

CTH Ws/K 0 M Thermal resistance (not supported in v2000.4)

FLSH - 0 M Self-heating flag, also has instance parameter. If

FLSH is not 0 and RTH>0, ON; otherwise OFF.

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Table 100 BJT LEVEL=8 Other Parameters

Name (Alias) Unit Default Factor Description

IS A -1.0 Ideal saturation current

MCF - 1.0 Non-ideal factor of reverse current between base

and collector. VT=VT*MCF

ZETACX - 1.0 Temperature exponent factor (epi-layer)

The default parameter values for HICUM version 2.2 are follow:

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****
.DATA test_data vbe vce vsub
0.0 0.0 0.0
0.1 0.0 0.0
0.2 0.0 0.0
0.3 0.0 0.0
0.4 0.0 0.0
0.5 0.0 0.0
0.6 0.0 0.0
0.7 0.0 0.0
0.8 0.0 0.0
0.9 0.0 0.0
1.0 0.0 0.0
.ENDDATA
.OPTION post
.TEMP 26.85
VIN 2 0 vbe
VC 1 0 vce
VS 4 0 vsub
VE 3 0 0
Q1 1 2 3 4 hicum
.DC data= test_data
.PRINT DC I(VIN) i2(q1) I(VC) i1(q1) I(VCS) i4(q1)
.MODEL hicum NPN Level=8
+ tref = 26.85
+ c10=.3760000E-31 qp0=.2780000E-13 ich=.2090000E-01
+ hfc=.1000000E+01
+ hfe=1.0000000E+00 hjei=.000000E+00
+ hjci=.100000E+01 tr=1.00000000E-9
+ cjei0=.81100E-14 vdei=.950000E+00 zei=.5000000E+00
+ aljei=.18000E+01
+ cjci0=.11600E-14 vdci=.800000E+00 zci=.3330000E+00
+ vptci=.41600E+03
+ rci0=.127800E+03 vlim=.700000E+00 vpt=.5000000E+01
+ vces=.100000E+00
+ t0=.47500000E-11 dt0h=.210000E-11 tbvl=.400000E-11
+ tef0=.180000E-11 gtfe=.140000E+01 thcs=.300000E-10
+ alhc=.750000E+00
+ fthc=.600000E+00
+ latb=.376500E+01 latl=.342000E+00 fqi=.9055000E+00
+ alit=.450000E+00 alqf=.225000E+00
+ favl=.118600E+01 qavl=.111000E-13 alfav=.82500E-04
+ alqav=.19600E-03
+ ibeis=.11600E-19 mbei=.101500E+01 ibeps=.10000E-29
+ mbep=.200000E+01
+ ireis=.11600E-15 mrei=.200000E+01 ireps=.10000E-29
+ mrep=.200000E+01
+ rbi0=.000000E+00 fdqr0=.00000E+00 fgeo=.730000E+00

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+ fcrbi=.00000E+00
+ cjep0=.00000E+00 vdep=.105000E+01 zep=.4000000E+00
+ aljep=.24000E+01
+ ceox=.000000E+00
+ cjcx0=.00000E+00 vdcx=.700000E+00 zcx=.3330000E+00
+ vptcx=.10000E+03
+ ccox=.000000E+00 fbc=.1526000E+00
+ ibcxs=.10000E-29 mbcx=.200000E+01 ibcis=.11600E-19
+ mbci=.101500E+01
+ cjs0=.000000E+00 vds=.6000000E+00 zs=.44700000E+00
+ vpts=.100000E+04
+ rcx=.0000000E+00 rbx=.0000000E+00 re=.00000000E+00
+ kf=.00000000E+00 af=.00000000E+00
+ vgb=.1170000E+01 alb=.6300000E-02 alt0=.000000E+00
+ kt0=.0000000E+00
+ zetaci=.1600E+01 alvs=.100000E-02 alces=.40000E-03
+ zetarbi=0.5880E+00 zetarcx=0.2230E+00
+ zetarbx=0.2060E+00 zetare=0.0000E+00
+ rth=0.0 cth=0.0
+ ibets=.00000E+00 abet=.000000E+00
+ itss=.000000E+00 msf=.0000000E+00 tsf=0.000000E+00
+ iscs=.000000E+00
+ msc=.0000000E+00
+ rsu=.0000000E+00 csu=.0000000E+00
.END

LEVEL=9 VBIC99 Model

The VBIC 95 (Vertical Bipolar Inter-Company Model) for Motorola bipolar
transistor device is installed in the device models as BJT LEVEL=4. VBIC99 is
a newer version of the VBIC model, and is implemented in the device models
as BJT LEVEL=9.
To use the VBIC99 model, set the LEVEL parameter to 9 for the bipolar
transistor model.
The VBIC99 model includes several effects that are improved compared to the
VBIC95 model.
■
In VBIC99, the temperature coefficients of the base and collector
resistances are split.
■
The temperature dependence of the built-in potential is also improved.

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Usage Notes
The following information applies to the HSPICE device model for the VBIC99
device:
■
Set LEVEL to 9 to identify the model as a VBIC99 bipolar junction transistor
model.
■
The reference temperature, TREF, equals 27 degrees.
■
The VBIC99 model supports AREA and M factor scaling.
■
This model supports self-heating. Model parameters are RTH and CTH.

LEVEL=9 Element Syntax

Qxxx nc nb ne <ns> mname <AREA=val> <OFF> <VBE=val> <VCE=val>
+ <M=val> <DTEMP=val>

Parameter Description

Qxxx BJT element name. Must begin with Q, followed by up to 1023

alphanumeric characters.

Nc Collector terminal node name or number.

Nb Base terminal node name and number.

Ne Emitter terminal node name or number.

Ns Substrate node name or number.

t Self heating node name or number.

Mname BJT model name reference.

AREA The normalized emitter area. VBIC99 LEVEL=9 model has no area
effect. Default value=1. Area is used only as an alias of the
multiplication factor (M).

OFF Sets the initial condition to OFF for this element in DC analysis. You
cannot use OFF with VBE or VCE.

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Parameter Description

VBE Initial internal base-emitter voltage.

VCE Initial internal collector-emitter voltage.

M Multiplier to simulate multiple BJTs in parallel.

DTEMP The temperature difference between the element and circuit.

Effects of VBIC99
The VBIC99 model includes several effects that are improved compared to the
VBIC95 model:
■
Addition of temperature dependency for several parameters.
■
Base-emitter breakdown model.
■
Reach-through model for base-collector depletion capacitance.
■
High-current beta rolloff effect.
■
Fixed collector-substrate capacitance,
■
Reverse transport saturation current.

Model Implementation
The following parameters were added to the VBIC99 model and are not in the
VBIC95 model.

ISRR IKF VRT ART QBM

DEAR EAP VBBE NBBE IBBE
TVBBE1 TVBBE2 TNBBE EBBE CCSO
XRCX XRBX XRBP XIXF XISR

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LEVEL=9 Model Parameters

These tables describe VBIC99 as HSPICE BJT LEVEL=9 model parameters,
including parameter names, descriptions, units, default values, and notes.
Parameters with an asterisk (*) are not used in the DC model.
Table 101 LEVEL=9 VBIC99 Basic Parameters

Parameter Unit Default Description

LEVEL - 9 Model level

TREF W 27.0 Nominal measurement temperature of

parameters

RCX W 0.0 Extrinsic collector Resistance

RCI W 0.0 Intrinsic collector Resistance

RBI W 0.0 Intrinsic collector Resistance

RBX W 0.0 Extrinsic collector Resistance

RBP W 0.0 Parasitic base Resistance

RE W 0.0 Emitter Resistance

RS W 0.0 Substrate Resistance

IS A 1.0e-16 Transport saturation current

IBEI A 1.0e-18 Ideal base-emitter saturation current

IBEN A 0.0 Non-Ideal base-emitter saturation current

IBCI A 1.0e-16 Ideal base-collector saturation current

IBCN A 0.0 Non-Ideal base-collector saturation current

ISP A 0.0 Parasitic transport saturation current

IBEIP A 0.0 Ideal parasitic base-emitter saturation current

IBENP A 0.0 Non-Ideal parasitic base-emitter saturation

current

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Table 101 LEVEL=9 VBIC99 Basic Parameters (Continued)

Parameter Unit Default Description

IBCIP A 0.0 Ideal parasitic base-collector saturation current

IBCNP A 0.0 Non-Ideal base-collector saturation current

ISRR A 1.0 *Reverse transport saturation current

NF - 1.0 Forward emission coefficient

NR - 1.0 Reverse emission coefficient

NEI - 1.0 Ideal base-emitter emission coefficient

NEN - 2.0 Non-ideal base-emitter emission coefficient

NCI - 1.0 Ideal base-collector emission coefficient

NCN - 2.0 Non-ideal base-collector emission coefficient

NFP - 1.0 Parasitic forward emission coefficient

NCIP - 1.0 Ideal parasitic base-collector emission

coefficient

NCNP - 2.0 Ideal parasitic base-collector emission

coefficient

NKF - 0.5 *High current beta roll off parameter

ME - 0.33 Base-emitter Grading coefficient

MC - 0.33 Base-collector Grading coefficient

MS - 0.33 Substrate-collector Grading coefficient

PE V 0.75 Base-emitter built-in potential

PC V 0.75 Base-collector built-in potential

PS V 0.75 Substrate-collector built-in potential

WBE - 1.0 Portion of IBEI from Vbei, 1-WBE from Vbex

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Table 101 LEVEL=9 VBIC99 Basic Parameters (Continued)

Parameter Unit Default Description

WSP - 1.0 Portion of ICCP from Vbep, 1-WBE from Vbci

AVC1 1/V 0.0 Base-collector avalanche parameter 1

AVC2 1/V 0.0 Base-collector avalanche parameter 2

VEF V 0.0 Forward early voltage, zero means infinity

VER V 0.0 Reverse early voltage, zero means infinity

IKF A 0.0 Forward knee current, zero means infinity

IKR A 0.0 Reverse knee current, zero means infinity

IKP A 0.0 Parasitic knee current, zero means infinity

TF S 0.0 Forward transit time

QTF - 0.0 Variation of TF with base-width modulation

XTF - 0.0 Coefficient of TF bias dependence

VTF V 0.0 Coefficient of TF dependence on Vbc

ITF A 0.0 Coefficient of TF dependence on Ic

TR S 0.0 Reverse transit time

EA EV 1.12 Activation energy for IS

EAIE EV 1.12 Activation energy for IBEI

EAIC EV 1.12 Activation energy for IBCI/IBEIP

EAIS EV 1.12 Activation energy for IBCIP

EANE EV 1.12 Activation energy for IBEN

EANC EV 1.12 Activation energy for IBCN/IBENP

EANS EV 1.12 Activation energy for IBCNP

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Table 101 LEVEL=9 VBIC99 Basic Parameters (Continued)

Parameter Unit Default Description

VO V 0.0 Epi drift saturation voltage

GAMM - 0.0 Epi doping parameter

HRCF - 0.0 High current RC factor

VRT V 0.0 *reach-through voltage for Cbc limiting

ART - 0.1 *smoothing parameter for reach-through

QBM - 0.0 *base charge model selection

DEAR - 0.0 *delta activation energy for ISRR

EAP - 1.12 *activation energy for ISP

VBBE - 0.0 *base-emitter breakdown voltage

NBBE - 1.0 * base-emitter breakdown emission coefficient

IBBE - 1.0e-6 * base-emitter breakdown current

TVBBE1 - 0.0 *linear temperature coefficient of VBBE

TVBBE2 - 0.0 *quadratic temperature coefficient of VBBE

TNBBE - 0.0 *temperature coefficient of NBBE

EBBE - 0.0 exp(-VBBE/(NBBE*Vtv))

Table 102 LEVEL=9 VBIC99 Capacitance/Charge Parameters

Parameter Unit Default Description

FC - 0.9 Forward bias depletion cap limit

CBEO F 0.0 Extrinsic base-emitter overlap cap

CJE F 0.0 Base-emitter zero bias cap

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Table 102 LEVEL=9 VBIC99 Capacitance/Charge Parameters (Continued)

Parameter Unit Default Description

AJE - -0.5 Base-emitter cap. Smoothing factor

CBCO F 0.0 Extrinsic base-collector overlap cap

CJC F 0.0 Base-collector zero bias cap

QCO Coul 0.0 Epi charge parameter

CJEP F 0.0 Base-collector extrinsic zero bias cap

AJC - -0.5 Base-collector cap smoothing factor

CJCP F 0.0 Substrate-collector zero bias cap

AJS - -0.5 Substrate-collector cap. Smoothing factor

CCSO F 0.0 *Fixed collector-substrate capacitance

Table 103 LEVEL=9 VBIC99 Temperature Coefficients

Parameter Unit Default Description

XRE - 0.0 Temperature exponent of emitter resistance

XRBI - 0.0 Temperature exponent of intrinsic base

resistance

XRCI - 0.0 Temperature exponent, intrinsic collector

resistance

XRS - 0.0 Temperature exponent of substrate resistance

XRCX - 0.0 *Temperature exponent of extrinsic base

resistance

XRBX - 0.0 *Temperature exponent, extrinsic collector

resistance

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Table 103 LEVEL=9 VBIC99 Temperature Coefficients (Continued)

Parameter Unit Default Description

XRBP - 0.0 *Temperature exponent of parasitic base

resistance

XIKF - 0.0 *Temperature exponent of IKF

XISR - 0.0 *Temperature exponent of ISRR

XVO - 0.0 Temperature exponent of VO

XIS - 3.0 Temperature exponent of IS

XII - 3.0 Temperature exponent of IBEI/IBCI/IBEIP/

IBCIP

XIN - 3.0 Temperature exponent, IBEN/IBCN/IBENP/

IBCNP

TNF 1/K 0.0 Temperature exponent of NF

TAVC 1/K 0.0 Temperature coefficient of AVC2

Table 104 LEVEL=9 VBIC99 Noise Parameters

Parameter Unit Default Description

AFN - 1.0 Base-emitter Flicker noise exponent

KFN - 0.0 Base-emitter Flicker noise constant

BFN - 1.0 Base-emitter Flicker noise 1/f dependence

Table 105 LEVEL=9 VBIC99 Self-heating Parameters

Parameter Unit Default Description

RTH K/W 0.0 Thermal resistance

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Table 105 LEVEL=9 VBIC99 Self-heating Parameters

Parameter Unit Default Description

CTH J/K 0.0 Thermal capacitance

Table 106 LEVEL=9 VBIC99 Excess Phase Parameter

Parameter Unit Default Description

TD S 0.0 Forward excess-phase delay time

VBIC99 LEVEL=9 AC Analysis Example

The VBIC99 level9 AC test example is located in the following directory:
$installdir/demo/hspice/bjt/vbic99_ac.sp
VBIC99 LEVEL=9 DC Analysis Example
The VBIC99 level9 DC test example is located in the following directory:
$installdir/demo/hspice/bjt/vbic99_dc.sp
VBIC99 LEVEL=9 TRAN Analysis Example
The VBIC99 level9 transient test example is located in the following directory:
$installdir/demo/hspice/bjt/vbic99_tran.sp

LEVEL=10 Philips MODELLA Bipolar Model

The Philips MODELLA LEVEL=10 provides a highly-accurate compact model
for lateral pnp integrated circuit transistors. This model is based directly on
device physics. It uses a physical modelling approach where the main currents
and charges are independently related to bias-dependent minority carrier
concentrations. It also models current crowding effects, high injection effect,

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and a bias-dependent output impedance. Table 107 describes the transistor

parameters for this model.
Table 107 BJT LEVEL=10 Transistor Parameters

Name (Alias) Unit Default Description

LEVEL 10 Model level

IS A 1.80e-16 Collector-emitter saturation current

BF 131.00 Ideal forward common-emitter current gain

IBF A 2.60e-14 Saturation current of non-ideal forward base

current

VLF V 0.54 V Cross-over voltage, non-ideal forward base

current

IK A 1.10e-4 High injection knee current

XIFV 0.43 Vertical fraction of forward current

EAFL V 20.50 Early voltage of the lateral forward current

component at zero collector-base bias

EAFV V 75.00 Early voltage of the vertical forward current

component at zero collector-base bias

BR 25.00 Ideal reverse common-emitter current gain

IBR A 1.20e-13 Saturation current of non-ideal reverse base

current

VLR V 0.48 Cross-over voltage of non-ideal reverse base

current

XIRV 0.43 Vertical fraction of reverse current

EARL V 13.10 Early voltage of the lateral reverse current

component at zero emitter-base bias

EARV V 104.00 Early voltage of the vertical reverse current

component at zero emitter-base bias

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Table 107 BJT LEVEL=10 Transistor Parameters (Continued)

Name (Alias) Unit Default Description

XES 2.70e-3 Ratio between saturation current of e-b-s

transistor and e-b-c transistor

XHES 0.70 Fraction of substrate current of e-b-s transistor

subject to high injection

XCS 3.00 Ratio between the saturation current of c-b-s

transistor and c-b-e transistor

XHCS 1.00 Fraction of substrate current of c-b-s transistor

subject to high injection

ISS A 4.00e-13 Saturation current of substrate-base diode

RCEX W 5.00 External part of the collector resistance

RCIN W 47.00 Internal part of the collector resistance

RBCC W 10.00 Constant part of the base resistance RBC

RBCV W 10.00 Variable part of the base resistance RBC

RBEC W 10.00 Constant part of the base resistance RBE

RBEV W 50.00 Variable part of the base resistance RBE

REEX W 27.00 External part of the emitter resistance

REIN W 66.00 Internal part of the emitter resistance

RSB W 1.00e15 Substrate-base leakage resistance

TLAT S 2.40e-9 Low injection (forward/reverse) transit time of

charge stored in epilayer between emitter and
collector

TFVR S 3.00e-8 Low injection forward transit time due to charge

stored in the epilayer under the emitter

TFN S 2.00e-10 Low injection forward transit time due to charge

stored in emitter, and buried layer under the
emitter

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Table 107 BJT LEVEL=10 Transistor Parameters (Continued)

Name (Alias) Unit Default Description

CJE F 6.10e-14 Zero-bias emitter-base depletion capacitance

VDE V 0.52 Emitter-base diffusion voltage

PE 0.30 Emitter-base grading coefficient

TRVR S 1.00e-9 Low injection reverse transit time due to charge

stored in the epilayer under the collector

TRN S 3.00e-9 Low injection reverse transit time due to charge

stored in collector, and buried layer under
collector

CJC F 3.90e-13 Zero-bias collector-base depletion capacitance

VDC V 0.57 Collector-base diffusion voltage

PC 0.36 Collector-base grading coefficient

CJS F 1.30e-12 Zero-bias substrate-base depletion

capacitance

VDS V 0.52 Substrate-base diffusion voltage

PS 0.35 Substrate-base grading coefficient

TREF οC 25.00 Reference temperature of the parameter set

DTA οC 0.00 Difference between the device temperature and

the ambient analysis temperature

VGEB V 1.206 Bandgap voltage of the emitter-base depletion

region

VGCB V 1.206 Bandgap voltage of collector-base depletion

region

VGSB V 1.206 Bandgap voltage of substrate-base depletion

region

VGB V 1.206 Bandgap voltage, base between emitter and

collector

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Table 107 BJT LEVEL=10 Transistor Parameters (Continued)

Name (Alias) Unit Default Description

VGE V 1.206 Bandgap voltage of the emitter

VGJE V 1.123 Bandgap voltage recombination emitter-base

junction

AE 4.48 Temperature coefficient of BF

SPB 2.853 Temperature coefficient, epitaxial base hole

mobility

SNB 2.60 Temperature coefficient of epitaxial base

electron mobility

SNBN 0.30 Temperature coefficient, buried layer electron

mobility

SPE 0.73 Temperature coefficient of emitter hole mobility

SPC 0.73 Temperature coefficient of collector hole

mobility

SX 1.00 Temperature coefficient of combined minority

carrier mobilities in emitter and buried layer

KF 0.00 Flicker noise coefficient

AF 1.00 Flicker noise exponent

EXPHI 0.00 rad Excess phase shift

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Equivalent Circuits

REEX REIN IFLAT IRLAT RCIN RCEX

E2 E1 C1 C2

E C

IRLAT IFLAT

CFLAT CRLAT

IRVER

IFVER IFVER IRVER

B1 B2

IRE IRC

ILE ILC
RBE RBC
ISE ISC

CET CCT

CFVER CRVER

CFN CRN

ISE CSD CST ISF RSB ISC

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Figure 37 Large-signal Equivalent Circuit

E REEX E2 REEX E1 REEX C1 REEX C2 REEX C

CπL
CμL

dlπL dlμL

dlRVER

dlFVER

GπV GBE GBC GμV

B1 B2
dlB1B dlB2B
CπV CμV

CSB
dlSE dlSC
GSB

Figure 38 Small-signal Equivalent Circuit

DC Operating Point Output

The DC operating point output facility gives information on the state of a device
at its operation point. Figure 1 shows the DC large signal equivalent circuit.
Figure 38 shows the small signal equivalent circuit. REEX, REIN, RCIN and
RCEX are constant resistors.

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dILAT=g fL ×dV E1B - g rL ×dV C1B

dIFVER=g 11× dV E2B1 + g 12 ×dVC1B
dIRVER=g 21 ×dV E1B + g 22× dV C2B2
dI B1B=G IBE ×dV E2B1
dI B2B =G IBC ×dV C2B2
dI PL= jw ×C IPL ×dV C1B
dI mL= jw ×C ImL ×dV E1B
dISE =G ISE ×dV E2B1
dISC= G ISC× dV C2B2
Table 108 BJT LEVEL=10, DC Operating Point Parameters

Name (Alias) Description

GFL Forward conductance, lateral path.: ∂I FLAT /∂V E 1B1

GRL Reverse conductance, lateral path.: ∂I RLAT / ∂V C1B

G11 Forward conductance, vertical path.: ∂I FVER / ∂V E

2B1

G12 Collector Early-effect on I FVER: ∂I FVER / ∂V C1B

G21 Emitter Early-effect on I RVER: ∂I RVER / ∂V E1B

G22 Reverse conductance, vertical path.: ∂I RVER / ∂V C2B2

GPI Conductance e-b junction: ∂ (I RE + I LE)/ ∂V E

2B1

GMU Conductance c-b junction: ∂ (I RC + I LC)/ ∂V C 2B2

GSB Conductance s-b junction: ∂I SF / ∂V SB + 1/R SB

CPIL Forward diffusion cap., lateral path: ∂Q FLAT / ∂V E1B

CPIV Forward total capacitance, vertical path: ∂ (Q TE + Q FVER + Q

FN) /∂ V E2B1

CMUL Reverse diffusion capacitance, lateral path: ∂Q RLAT / ∂V C1B

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Table 108 BJT LEVEL=10, DC Operating Point Parameters (Continued)

Name (Alias) Description

CMUV Reverse total capacitance, vertical path: ∂ (Q tc + Q rver + Q rn)/

∂V C2B2

CSB Total capacitance s-b junction: ∂Q TS / ∂V SB + ∂Q SD /∂V SB

Model Equations

Early Factors
The Early factors for the components of the main current I p are derived from
the variation of the depletion widths in the base relative to the base width itself.
Early factor of the lateral current components
⎧ V1 ⎞ 2 ⎫
⎪ ⎛ ⎛ 1 – ------- V-⎞
+δ ⎛ 1 – ------- - + δ ⎞ ⎪
⎪ ⎜ ⎝ VD ⎠ ⎝ VD ⎠ ⎟ ⎪
FLAT = hyp ⎨ 1 – ⎜ ------------------------------------- – --------------------------------------- ⎟ ⋅ δE ⎬
1⎪ ⎜ 1 + EARL EAFL
--------------- 1 + --------------- ⎟ ⎪
⎪ ⎝ 2VD 2VD ⎠ ⎪
⎩ ⎭
Early factor of the forward vertical current component

⎧ ⎛ ⎛ V E2B1 ⎞ 2 V CLB ⎞ 2 ⎞ ⎫
⎪ -------------
- δ ⎛ ------------ + δ⎟ ⎪
⎜4 ⎝ 1 –
⎠
+ 4
⎝
1 –
⎠
⎪ VD VD ⎪
FFVR = hyp ⎨ 1 – ⎜⎜ ---------------------------------------------- – -------------------------------------------- ⎟⎟ ⋅ δE ⎬
T T
1⎪ EARV EAFV ⎪
⎜ 1 + --------------- 1 + --------------- ⎟
⎪ ⎝ 2VD T 2VD T ⎠ ⎪
⎩ ⎭
Early factor of the reverse vertical current component

⎧ ⎛ ⎛ V E1B ⎞ 2 V C2B2 ⎞ 2 ⎞ ⎫
⎪ ⎜ 4 ⎝ 1 – ----------- - + δ 4 ⎛ 1 – -------------- + δ⎟ ⎪
⎪ VD ⎠ ⎝ VD ⎠ ⎪
FRVER = hyp ⎨ 1 – ⎜ ------------------------------------------- – ---------------------------------------------- ⎟ ⋅ δE ⎬
T T
1⎪ ⎜ EARV EAFV ⎟
⎜ 1 + --------------- 1 + --------------- ⎟ ⎪
⎪ ⎝ 2VD T 2VD T ⎠ ⎪
⎩ ⎭

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Model Parameters

■
EAFL
■
EAFV
■
EARL
■
EARV

Currents
The ideal diode equations are as follows.
Ve1b/Vt
If 1 = I S ( e – 1)
Ve2b1/Vt
If 2 = I S ( e – 1)
Vc1b/Vt
Ir 1 = I S ( e – 1)
Vc2b2/Vt
Ir 2 = I S ( e – 1)
model parameter: Is
The Ip main current is as follows.
Ip = I flat + I fver – I rlat – I rver

Forward currents—Iflat and Ifver

The main forward current is separated into lateral and vertical components,
originating from the emitter-base junction sidewall and bottom, respectively.
These formulations include Early and high injection effects. Because the two
currents depend on different internal emitter-base junction voltages, emitter
current crowding is also modelled.
The lateral forward current component (Iflat) is:
⎛ ⎞
⎜ 4 × ( 1 – Xifv ) × If 1⎟
I flat = ⎜ ---------------------------------------------------⎟ ÷ Flat
⎜ If 1- ⎟
⎝ 3 + 1 + 16 × --------- Ik ⎠
The vertical forward current component (Ifver) is:

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⎛ ⎞
⎜ 4 × Xifv × If 2 ⎟
I fver = ⎜ ---------------------------------------------⎟ ÷ Ffver
⎜ If 2⎟
⎝ 3 + 1 + 16 × ------- Ik ⎠
-

Model parameters:
■
Xifv
■ Ik

Reverse currents—Irlat and Irver

The main reverse current contains lateral and vertical components, originating
from the collector-base junction sidewall and bottom, respectively. These
formulations include Early and high injection effects. The two currents depend
on different internal collector-base junction voltages, collector current crowding
is also modelled.
The lateral reverse current component (Irlat) is:
⎛ ⎞
⎜ 4 × ( 1 – Xirv ) × Ir 1⎟
I rlatt = ⎜ ----------------------------------------------------⎟ ÷ Flat
⎜ Ir 1- ⎟
⎝ 3 + 1 + 16 × ------- Ik ⎠
The vertical reverse current component (Irver) is:
⎛ ⎞
⎜ 4 × Xirv × Ir 2 ⎟
I rver = ⎜ ---------------------------------------------⎟ ÷ Frver
⎜ Ir 2-⎟
⎝ 3 + 1 + 16 × ------- Ik ⎠
Model parameter: Xirv

Base Current

Forward components
The total forward base current is composed of an ideal and a non-ideal
component. Both components depend on the bottom part of the emitter-base
junction.
Ideal component:

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If 2
Ire = --------
Bf
Non-ideal component:
Ve2b1/Vt
Ibf × ( e – 1 )-
Ile = ------------------------------------------------
Ve2b1/Vt Vlf/2Vt
e +e
Model parameters:
■
Bf
■
Ibf
■
Vif

Reverse components
The total reverse base current is composed of an ideal and a non-ideal
component. Both components depend on the bottom part of the collector-base
junction.
Ideal component:
Ir 2
Irc = --------
Br
Non-ideal component:
Vc2b2/Vt
Ibr × ( e – 1)
Ilc = -------------------------------------------------
Vc2b2/2Vt Vlt/2Vt
e +e
Model parameters:
■ Br
■ Ibr
■
Vlr

Substrate current

Forward components
The forward substrate component depends on the bottom part of the emitter-
base junction. It consists of an ideal component, and a component subject to
high injection effects. The XHES parameter determines the fraction that is
subject to high injection.

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4 × Xhes × Xes × If 2
Ise = ( 1 – Xhes ) × Xes × If 2 + -------------------------------------------------------
If 2
3 + 1 + 16 × --------
Ik
Model parameters:
■
Xes
■ Xhes

Reverse components
The reverse substrate component depends on the bottom part of the collector-
base junction. It consists of an ideal component, and a component subject to
high injection effects. The XHCS parameter determines the fraction that is
subject to high injection.
4 × Xhcs × Xcs × Ir 2
Isc = ( 1 – Xhcs ) × Xcs × Ir 2 + -------------------------------------------------------
Ir 2
3 + 1 + 16 × --------
Ik
Model parameters:
■
Xcs
■
Xhcs

Additional Substrate and Base current

An ideal diode models the substrate-base junction. You can use the reverse
leakage current of this junction to model the zero-crossover phenomena,
sometimes observed in the base current at low bias conditions and high
temperatures.
Vsb/Vt
Isf = Iss × ( e – 1)
Model parameter: Iss

Charges

Depletion Charges
The Poon-Gummel formulation models the depletion charges.
Emitter-base depletion charge

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⎧ ⎫
⎪ ⎪
– Cje ⎪ Vde – Ve2b1 ⎪
Qte = --------------- × ⎨ -----------------------------------------------------
Pe ⎬
1 – Pe ⎪ ------ ⎪
2 2
⎪ ⎛ 1 – Ve2b1 ----------------⎞ + δ ⎪
⎩ ⎝ Vde ⎠ ⎭

Model parameters:
■
Cje
■
Vde
■
Pe
Collector-base depletion charge

⎧ ⎫
⎪ ⎪
– Cjc ⎪ Vdc – Vc2b2 ⎪
Qtc = --------------- × ⎨ -----------------------------------------------------
Pc ⎬
1 – Pc ⎪ ------ ⎪
2 2
⎪ ⎛ 1 – Vc2b2 ----------------⎞ + δ ⎪
⎩ ⎝ Vdc ⎠ ⎭

Model parameters:
■ Cjc
■
Vdc
■
Pc
Substrate-base depletion charge

⎧ ⎫
⎪ ⎪
– Cjs ⎪ Vds – Vsb ⎪
Qts = --------------- × ⎨ ---------------------------------------------
Ps
-⎬
1 – Ps ⎪ ------ ⎪
2 2
⎪ ⎛ 1 – ---------⎞ + δ ⎪
Vsb
⎩ ⎝ Vds⎠ ⎭

Model parameters:
■
Cjs
■
Vds
■ Ps

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Forward Stored Charges

Storing forward-active charges consists of three main components.
■
Charge stored in epitaxial base region between emitter and collector:

Qflat = Tlat × Ik × ⎛ 1 + 16 × -------- – 1⎞ × -----------

If 1 Flat
⎝ Ik ⎠ 8
■
Charge stored in epitaxial base region under emitter:

Qfver = Tfvr × Ik × ⎛ 1 + 16 × -------- – 1⎞ × ---

If 2 1
⎝ Ik ⎠ 8
■
Charge stored in emitter and buried layer under emitter:
Qfn = Tfn × If 2

Reverse Stored Charges

Storing reverse-active charges consists of three main components.
■
Charge stored in epitaxial base region between emitter and collector:

Qrlat = Tlat × Ik × ⎛ 1 + 16 × -------- – 1⎞ × -----------

Ir 1 Flat
⎝ Ik ⎠ 8
■
Charge stored in epitaxial base region under collector:

Qrver = Trvr × Ik × ⎛ 1 + 16 × -------- – 1⎞ × ---

Ir 2 1
⎝ Ik ⎠ 8
■
Charge stored in collector and buried layer under collector:
Qrn = Trn × Ir 2

Substrate-base Stored Charge

Charge stored in the substrate and base, due to the substrate-base junction.
This charge storage occurs only when the substrate-base junction is forward
biased:
Qsd = Tsd × Isf

Note: Tsd is a constant.

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Series Resistances
The emitter includes the following series resistance:
■
Reex—constant
■
Rein—constant
The collector includes the following series resistance:
■
Rcex—constant
■
Rcin—constant
The conductivity modulation of the base resistances is derived from the fact
that the voltage drop across the epitaxial layer, is inversely proportional to the
electron concentration under the emitter and collector.
Base resistance under the emitter:
2 × Rbev
Rbe = Rbec + -----------------------------------
If 2
1 + 16 × --------
Ik
Base resistance under the collector:
2 × Rbcv
Rbc = Rbcc + -----------------------------------
Ir 2
1 + 16 × --------
Ik
The Rb resistance models the ohmic leakage, across the substrate-base
junction.

Noise Equations
For noise analysis current sources are added to the small signal equivalent
circuit. In these equations:
■ f represents the operation frequency of the transistor.
■
Df is the bandwidth.
When measured at 1 Hz, a noise density is obtained.
Thermal Noise
2 ⋅ k ⋅ Tk-
4-------------------------
iN REEX= ⋅ Δf
REEX

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2 ⋅ k ⋅ Tk-
4-------------------------
iN REIN= ⋅ Δf
REIN
2 ⋅ k ⋅ Tk-
4-------------------------
iN RCIN= ⋅ Δf
RCIN
2 ⋅ k ⋅ Tk-
4-------------------------
iN RCEX= ⋅ Δf
RCEX
2 ⋅ k ⋅ Tk-
4-------------------------
iN RBE= ⋅ Δf
RBE
2 ⋅ k ⋅ Tk-
4-------------------------
iN RBC= ⋅ Δf
RBC
2 ⋅ k ⋅ Tk-
4-------------------------
iN RSB= ⋅ Δf
RSB
Lateral Collector Current Shot Noise
2
iN CLAT= 2 ⋅ q ⋅ I FLAT – I RLAT ⋅ Δf
Vertical Collector Current Shot Noise
2
iN CVER= 2 ⋅ q ⋅ I FVER – I RVER ⋅ Δf
Forward-base Current Shot Noise and 1/f Noise
1 – AF AF
2 KF ⋅ MULTI ⋅ I RE ⋅ I LE
iN B= 2 ⋅ q ⋅ I RE – I LE ⋅ Δf + -------------------------------------------------------------------------------------- ⋅ Δf
f

Temperature Dependence of Parameters

Tk = Tref + 273.16
Temp
Tn = ---------------------------------
Tref + 273.16
1 1
Ti = --------------------------------- – --------------
Tref + 273.16 Temp

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Series Resistance
SPC
RCIN T = RCIN × T N
SNBN
RBCC T = RBCC × T N
SNB
RBCV T = RBCV × T N
SNBN
RBEC T = RBEC × T N
SNB
RBEV T = RBEV × T N
The BJT LEVEL=10 model assumes that REEX and RCEX are temperature
independent.

Depletion Capacitances
TEMP
VDxt = – 3k ---------------- ⋅ 1n ( T N ) + VDx ⋅ T N + ( 1 – T N ) ⋅ Vgap
q
VDx PX
CJ XT = CJx ⋅ ⎛ --------------⎞
⎝ VD XT⎠

Emitter-base Junction
Vgap=VGEB, x=E
Collector-base Junction
Vgap=VGCB, x=C
Substrate-base Junction
Vgap=VGSB, x=S

Temperature Dependence of Other Parameters

TEMP
VD T = – 3k ---------------- ⋅ 1n ( T N ) + VD ⋅ T N + ( 1 – T N ) ⋅ VGB
q

VD T
EAFL T = EAFL ⋅ -----------
VD

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VD T
EARL T = EARL ⋅ -----------
VD

VD T
EAFV T = EAFV ⋅ -----------
VD

VD T
EARV T = EARV ⋅ -----------
VD

IS T = IS ⋅ T N ( 4.0 – SPB ) ⋅ exp ( q ⋅ VGB ⋅ T I ⁄ k )

TI
BF T = BF ⋅ T N ( AE – SPB ) ⋅ exp {q ⋅ ( VGB – VGE ) ⋅ ⁄ k}

2 TI
IBF T = IBF ⋅ T N ⋅ exp {q ⋅ ( VGJE ⁄ 2 ) ⋅ ⁄ k}
( 1 – SPB )
IK T = IK ⋅ T N

BF T
BR T = BR ⋅ ----------
BF
IBF T
IBR T = IBR ⋅ ------------
IBF
2 TI
ISST = ISS ⋅ T N ⋅ exp {q ⋅ VGSB ⋅ ⁄ k}
( SPB – 1.0 )
TLAT T = TLAT ⋅ T N

TLAT T
TFVR T = TFVR ⋅ -----------------
TLAT
( SX – 1.0 )
TFN T = TFN ⋅ T N

TLAT T
TRVR T = TRVR ⋅ -----------------
TLAT
TFN T
TRN T = TRN ⋅ --------------
TFN
All other model parameters are temperature-independent.

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LEVEL=11 UCSD HBT Model

The UCSD High Speed Devices Group in collaboration with the HBT Model
Working Group, has been developing better SPICE models for heterojunction
bipolar transistors (HBTs). The HSPICE implementation of the UCSD HBT
MODEL is based on the website: http://hbt.ucsd.edu

Usage Notes
The following information applies to the HSPICE device model for the UCSD
HBT device:
1. Set BJT LEVEL=11.
2. The default room temperature is 25o C in the HSPICE, but is 27o C in most
other simulators. When comparing to other simulators, do one of the
following:
• set the simulation temperature to 27, or
• set TEMP 27, or
• set .OPTION TNOM=27
3. The set model parameter should always include the model reference
temperature, TREF. The default value for TREF is 27.
4. You can use DTEMP with this model to increase the temperature of individual
elements, relative to the circuit temperature. Set its value on the element
line.
5. The HBT (BJT LEVEL=11) model includes self-heating effects. If you turn
on self-heating, then set RTH to more than zero and SELFT to 1 in the model
card.

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LEVEL=11 Element Syntax

Qxxx nc nb ne [ns] mname [AREA=val] [OFF] [VBE=val]
+ [VCE=val] [M=val] [DTEMP=val]

Parameter Description

Qxxx BJT element name. Must begin with Q, which can be followed by up
to 1023 alphanumeric characters.

nc Collector terminal node name or number.

nb Base terminal node name and number.

ne Emitter terminal node name or number.

ns Substrate node name or number.

t Self-heating node name or number.

mname BJT model name reference.

AREA Normalized emitter area.

OFF Sets initial condition to OFF for this element in DC analysis. You
cannot use OFF with VBE or VCE.

VBE Initial internal base-emitter voltage.

VCE Initial internal collector-emitter voltage.

M Multiplier to simulate multiple BJTs in parallel.

DTEMP Difference between the temperature of the element and circuit.

Table 109 BJT LEVEL=11 Parameters

Parameter Unit Default Description

BKDN logic false Flag indicating to include BC breakdown

TREF C 27 Temperature at which model parameters are

given

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

IS A 1e-25 Saturation value for forward collector current

NF - 1 Forward collector current ideality factor

NR - 1 Reverse current ideality factor

ISA A 1e10 Collector current EB barrier limiting current

NA - 2 Collector current EB barrier ideality factor

ISB A 1e10 Collector current BC barrier limiting current

NB - 2 Collector current BC barrier ideality factor

VAF V 1000 Forward Early voltage

VAR V 1000 Reverse Early voltage

IK A 1e10 Knee current for dc high injection effect

BF - 10000 Forward ideal current gain

BR - 10000 Reverse ideal current gain

ISE A 1e-30 Saturation value for non-ideal base current

NE - 2 Ideality factor for non-ideal forward base

current

ISEX A 1e-30 Saturation value for emitter leakage diode

NEX - 2 Ideality factor for emitter leakage diode

ISC A 1e-30 Saturation value for intrinsic bc junction current

NC - 2 Ideality factor for intrinsic bc junction current

ISCX A 1e-30 Saturation value for extrinsic bc junction

current

NCX - 2 Ideality factor for extrinsic bc junction current

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

FA - 0.9 Factor for specification of avalanche voltage

BVC V 1000 Collector-base breakdown voltage BVcbo

NBC - 8 Exponent for BC multiplication factor vs voltage

ICS A 1e-30 Saturation value for collector-substrate current

NCS - 2 Ideality factor for collector-substrate current

RE ohm 0 Emitter resistance

REX ohm 0 Extrinsic emitter leakage diode series

resistance

RBX ohm 0 Extrinsic base resistance

RBI ohm 0 Intrinsic base resistance

RCX ohm 0 Extrinsic collector resistance

RCI ohm 0 Intrinsic collector resistance

CJE F 0 BE depletion capacitance at zero bias

VJE V 1.6 BE diode built-in potential for Cj estimation

MJE - 0.5 Exponent for voltage variation of BE Cj

CEMIN F 0 Minimum BE capacitance

FCE - 0.8 Factor for start of high bias BE Cj

approximation

CJC F 0 Intrinsic BC depletion capacitance at zero bias

VJC V 1.4 Intrinsic BC diode built-in potential for Cj

estimation

MJC - 0.33 Exponent for voltage variation of Intrinsic BC Cj

CCMIN F 0 Minimum value of intrinsic BC Cj

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

FC - 0.8 Factor for start of high bias BC Cj

approximation

CJCX F 0 Extrinsic BC depletion capacitance at zero bias

VJCX V 1.4 Extrinsic BC diode built-in potential for Cj

estimation

MJCX - 0.33 Exponent for voltage variation, Extrinsic BC Cj

CXMIN F 0 Minimum extrinsic Cbc

XCJC - 1 Factor for partitioning extrinsic BC Cj

CJS F 0 Collector-substrate depletion capacitance (0

bias)

VJS V 1.4 CS diode built-in potential for Cj estimation

MJS - 0.5 Exponent for voltage variation of CS Cj

TFB S 0 Base transit time

TBEXS S 0 Excess BE heterojunction transit time

TBCXS S 0 Excess BC heterojunction transit time

TFC0 S 0 Collector forward transit time

ICRIT0 A 1e3 Critical current for intrinsic Cj variation

ITC A 0 Characteristic current for TFC

ITC2 A 0 Characteristic current for TFC

VTC V 1e3 Characteristic voltage for TFC

TKRK S 0 Forward transit time for Kirk effect

VKRK V 1e3 Characteristic Voltage for Kirk effect

IKRK A 1e3 Characteristic current for Kirk effect

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

TR S 0 Reverse charge storage time, intrinsic BC

diode

TRX S 0 Reverse charge storage time, extrinsic BC

diode

FEX - 0 Factor to determine excess phase

KFN - 0 BE flicker noise constant

AFN - 1 BE flicker noise exponent for current

BFN - 1 BE flicker noise exponent for frequency

XTI - 2 Exponent for IS temperature dependence

XTB - 2 Exponent for beta temperature dependence

TNE - 0 Coefficient for NE temperature dependence

TNC - 0 Coefficient for NC temperature dependence

TNEX - 0 Coefficient for NEX temperature dependence

EG V 1.5 Activation energy for IS temperature

dependence

EAE V 0 Activation energy, ISA temperature

dependence

EAC V 0 Activation energy, ISB temperature

dependence

EAA V 0 Added activation energy, ISE temp

dependence

EAB V 0 Added activation energy, ISC temp

dependence

EAX V 0 Added activation energy, ISEX temp

dependence

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

XRE - 0 Exponent for RE temperature dependence

XREX - 0 Exponent for REX temperature dependence

XRB - 0 Exponent for RB temperature dependence

XRC - 0 Exponent for RC temperature dependence

TVJE V/C 0 Coefficient for VJE temperature dependence

TVJCX V/C 0 Coefficient for VJCX temperature dependence

TVJC V/C 0 Coefficient for VJC temperature dependence

TVJS V/C 0 Coefficient for VJS temperature dependence

XTITC - 0 Exponent for ITC temperature dependence

XTITC2 - 0 Exponent for ITC2 temperature dependence

XTTF - 0 Exponent for TF temperature dependence

XTTKRK - 0 Exponent for TKRK temperature dependence

XTVKRK - 0 Exponent for VKRK temperature dependence

XTIKRK - 0 Exponent for IKRK temperature dependence

SELFT - 0 Flag. Indicates whether to use self-heating.

0 (default) does not use self-heating.

1 turns on the self-heating feature.

RTH C/W 0 Thermal resistance, device to thermal ground

CTH C/ 0 Thermal capacitance of device.

Joule

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Model Equations
This section describes the model equations for the HSPICE BJT LEVEL=11
model.

Current Flow
There are seven different current flow calculations for the BJT LEVEL=11
device model.
■
Intrinsic collector current contributions. This model computes the electron
flow between Ei and Ci nodes by using equations similar to the Gummel-
Poon model with modifications to take into account the potential spike that
can appear at the base-emitter or base-collector junctions of HBTs. This
model separates the electron current into forward and reverse components,
Icf and Icr.
Icf=IS * [exp(qVbei/NF/KT) - 1] / D
Icr=IS * [exp(qVbci/NR/KT) -1] / D
In these equations:
D= qb + IS* exp(qVbei/NA/KT) / ISA + IS*exp(qVbci/NB/KT)/ISB
ISA, ISB, NA and NB are new parameters. ISA and ISB approximate the
transition currents, from base-transport controlled to potential-barrier
controlled, current flow.
qb partially retains the standard BJT model form (a fractional increase in the
base charge associated with the bias changes).
qb= q1/2 * [1+(1+4*q2)0.5]
q1=1/ [1 - Vbci/VAF -Vbei/VAR]
q2=IS/IK*[exp(qVbei/NF/KT)-1]
In the preceding equations, qb omits the reverse knee current contribution.
As noted in the following, qb is not used to define the ac model in the fashion
of the Gummel-Poon model.
The total collector current Icc is:
Icc=Icf - Icr
This formulation uses the IS, NF, VAF, VAR, and IK parameters, established
in the SPICE BJT model in addition to the ISA, ISB, NA, and NB parameters
described above.
■
Intrinsic Base-Emitter Diode. Ideal and non-ideal components are included:

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Ibei= Icf / BF + ISE * [exp (q Vbei/ NE /KT) - 1]

■
Extrinsic Base-Emitter Diode. The LEVEL=11 model includes a diode
connected between the Ex and E nodes, and an associated series
resistance (Rex). You can use the diode and its resistance to model
contributions from emitter edges.
Ibex=ISEX * [exp (q Vbex/ NEX /KT) - 1]
■
Intrinsic Base-Collector Diode. Ideal and non-ideal components are
included:
Ibci=Icr / BR + ISC * [exp (q Vbci/ NC /KT) - 1]
■
Intrinsic Base-Collector Breakdown Current. Ibk is current between the
collector and base nodes, generated due to avalanche breakdown of the
base-collector junction. If you set the BKDN parameter to true, then Ibk is
determined according to:
Ibk= (Mf -1) * Icf
Otherwise, Ibk=0
The preceding equations use the following definitions:
• Mf is the multiplication factor associated with the BC junction at the
specified voltage.
• Icf is the forward electron current (as computed above in the absence of
multiplication).
Mf is calculated with a physically based expression, modified to avoid
the singularity at Vbci=-BVC.
Mf depends exclusively on the intrinsic base-intrinsic collector voltage,
Vbci. If -Vbci closely approaches or exceeds BVC
(-Vbci>FA*BVC with FA typically chosen to be 0.95), then the
multiplication factor is computed according to a constant slope
expression.
Mf=1 / [1- (-Vbci/BVC)^NBC] for KTop/q< -Vbci < FA*BVC
Mf=1 for -Vbci > KTop/q
Mf=Mfl + gl *(-Vbci-FA*BVC) for -Vbci > FA*BVC
In the preceding equations, Mfl and gl are the values of Mf and its
derivative with respect to voltage, evaluated at the voltage -
Vbci=FA*BVC:
Mfl=1 / (1-FA^NBC)
gl=Mfl*(Mfl-1)*NBC/(FA*BVC)

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■
Extrinsic Base-Collector Diode. This diode has customary I-V
characteristics with its own saturation current and ideality factor.
Ibcx= ISCX * [exp(q Vbcx/ NCX /KTop) - 1]
■
Substrate-Extrinsic Collector Diode. This diode allows for conducting
substrates. Use it primarily for SiGe HBTs.
Ics= ICS * [exp(-q Vcs/ NCS /KTop) - 1]
In accordance with the model topology, the external currents through the
E,B, and C nodes are:
Ib= Ibei + Ibex - Ibk + Ibci + Ibcx
Ic= Icc + Ibk -Ibci-Ibcx - Ics

Charge Storage
This section describes the following different charge storage calculations for the
HSPICE BJT LEVEL=11 device model.
■
Base-Emitter Charge. The overall charge stored at the base-emitter junction
has components associated with the base-emitter depletion layer:
• Qbej, which is current-independent.
• Qbediff, a collector current-dependent charge. Qbediff corresponds to a
portion of the base charge, and the (collector current-dependent) base-
collector charge.
Qbe= Qbej + Qbediff
■
Base-Emitter Depletion Charge, Qbej. The depletion charge, Qbej, follows
equations standard for SPICE, modified to allow specification of a minimum
capacitance CEMIN (corresponding to reach-through to an n+ layer).
As studied by Chris Grossman, there is often an extra component of charge
storage at the base-emitter heterojunction of HBTs, associated with a
minimum in the conduction band energy profile.
Qbej is computed using DepletionCapMod.
Define:
Vmin= VJE*[1-(CJE/CEMIN)(1/MJE)]
(the critical voltage for attaining the minimum capacitance value)
If Vbei<FCE*VJE and Vbei<Vmin:

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Qbej=CEMIN*(Vbei-VJE)+CEMIN*VJE*MJE/(MJE-1) *
(CJE/CEMIN)(1/MJE)
Cbej=dQbej/dVbei=CEMIN
If Vbei<FCE*VJE and Vbei>Vmin:
Qbej= -CJE*VJE*(1-Vbei/VJE)(1-MJE) / (1-MJE)
Cbej= CJE*(1-Vbei/VJE)(-MJE)
If Vbei>FCE*VJE, and CJE>CEMIN*(1-FCE)MJE:
Qbej=-CJE*VJE/(1-FCE)MJE*[(1-FCE)/(1-MJE)+FCE-Vbei/VJE
-MJE*(FCE-Vbei/VJE)2/2/(1-FCE)]
Cbej=CJE/(1-FCE)MJE*[1+MJE*(Vbei/VJE-FCE)/(1-FCE)]
If Vbei>FCE*VJE, and CJE<CEMIN*(1-FCE)MJE,
Qbej=CEMIN*(Vbei-VJE)+CEMIN*VJE*MJE/(MJE-1)
*(CJE/CEMIN)(1/MJE)+CJE*VJE*(Vbei/VJE-FCE)2*MJE/2/(1-
FCE)(MJE+1)
Cbej=CEMIN + CJE*VJE*MJE*(Vbei/VJE-FC)/(1-FCE)(MJE+1)
■
Base-Emitter Diffusion Charge, Qbediff. The diffusion charge in HBTs is
associated with contributions from minority carriers in the base, and from
mobile charge in the collector depletion region. In homojunction transistors,
diffusion charge storage in the emitter is also present. The LEVEL=11
model evaluates the base and collector-depletion region contributions
separately (if necessary, the emitter charge storage can be associated with
the base contribution).
• Specify the base charge through the base transit time, TFB. This transit
time varies with bias through several mechanisms:
• The Early effect causes a change in transit time with junction voltage.
• In heterojunction transistors, there is frequently a minimum in the
conduction band, on the base side of the base-emitter (and potentially
base-collector) heterojunction. Minority carriers tend to accumulate in
these potential wells.
The stored charge adds to the base charge (to a good approximation).
In the lowest order, the charge stored is directly proportional to the
collector current, and thus contributes to TFB. For a greater degree of

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accuracy, the depth of the potential well on the emitter side varies with
Vbe. Similarly, the amount of charge stored at the base-collector side
varies with Vbc.
The equations used to describe the effects are:
TFBt=TFB*(1+Vbei/VAR+Vbci/VAF) +
TBEXS*exp(-q(Vbei-VJE)/NA/KTop) +
TBCXS*exp(q(Vbci-VJC)/NB/KTop)
Note: Different signs are associated with the BE and BC
junction effects. The value of the T temperature to
describe these effects is assumed to be Top.
You can use any of these methods to specify collector
charge:

• A part is specified by the TFC0 transit time parameter, modified by the

qcc velocity modulation factor to account for voltage and current
dependences.
• A part of the mobile charge is specified in the calculation of base-
collector depletion region charge. To calculate this part, Qbcm, an
expression for the collector current-dependent base-collector depletion
charge is developed. Then the current-independent part is subtracted
off (as discussed in the next section).
• A separate charge term, Qkrk, is associated with the Kirk effect.
Qfdiff=Icf*ftt*(TFBt + TFC0/qcc) + Qbcm + Qkrk
ftt=rTXTTF
qcc is a factor describing bias dependence of electron velocity in the BC
depletion region:
qcc= [1 + (Icf/ITC)2] / [1 + (Icf/ITC2)3 + (VJCI-Vbci)/VTC]
• ITC is the threshold current for the velocity profile modulation effect.
• ITC2 is a higher current at which the velocity profile modulation peaks
(and the cutoff frequency begins to roll-off).
• VTC provides a voltage (or electric field) dependence of the carrier
velocity.
ITC=ITC@Tnom* rTXTITC
ITC2=ITC2@Tnom* rTXTITC2

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The following expression calculates the charge storage associated with

the Kirk effect:
Qkrk=TKRK*Icf*exp[Vbci/VKRK+Icf/IKRK]
To account for excess phase, a fraction (1-FEX) of the current-
dependent forward charge (Qfdiff) is associated with the BE junction,
while the remainder is associated with the intrinsic BC junction.
Qbediff= (1-FEX)*Qfdiff
Note: Qfdiff (and thus Qbediff) depends on Vbci, through the
terms involving Icf, qcc, Qkrk and Qbcm. As a result, a
trans-capacitance is implied in the ac model. Similarly,
Qbcdiff depends on Vbei, implying another trans-
capacitance.
■
Intrinsic Base-Collector Charge, Qbci. Charge stored at the intrinsic base-
collector junction includes:
• Depletion charge from the junction region.
• Diffusion charge associated with normal operation of the transistor.
• Diffusion charge associated with reverse operation of the device.
Qbci=Qbcj + TRI* Icr + FEX*Qfdiff
Although the charge in the depletion region depends on Ic, this section
describes the portion corresponding to the Ic=0 condition.
Subsequently, the proper Ic dependent contribution is considered, and
included in Qbcm (a charge that is part of Qfdiff).
■
Intrinsic base-collector depletion charge, Qbcj. When Ic=0, the depletion
charge is calculated using the same algorithm as applied to Qbej (which
accounts for a minimum of capacitance when the n- collector is depleted).
■
Intrinsic base-collector diffusion charge. For reverse operation, a diffusion
capacitance is implied by the TRI term in the Qbci equation. Here TRI is the
effective reverse transit time, which is assumed to be bias-independent. The
associated reverse diffusion capacitance is:
Cbcrdiff= TRI* dIbci/dVbci
For operation also includes diffusion capacitance in a manner similar to
base-emitter capacitance with a partitioning specified by the excess phase
factor, FEX.

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The terms associated with Icf*ftt*(TFB + TFC0/qcc) + Qkrk have already

been discussed above for calculating Qbediff. The next section describes
the Qbcm portion.
■
Qbcm. This charge is the difference between the “proper” Icf-dependent
charge in the BCi depletion region (called Qbcf), and the BCi depletion
charge computed above (Qbcj), assuming that Icf=0.
Qbcm=Qbcf - Qbcj
To properly compute Qbcf, a formulation of the depletion region charge
(similar to that used above) is used with the modification that the CJ
parameter (zero bias capacitance) can depend on the Icf collector current.
This corresponds to the physical phenomenon of varying charge density in
the depletion region as a result of the mobile electron charge in that region.
The current-dependent CJ parameter is termed CJCH; its form is:
CJCH=CJC*sign(1-Icf/ICRIT)*ABS(1-Icf/ICRIT)MJC
In this equation, ICRIT is a critical current, at which the effective charge
density in the BC depletion region vanishes (and the capacitance Cbci drops
dramatically). ICRIT is dependent on temperature and bias conditions,
according to:
ICRIT=ICRIT0*qcc/ftt
In the preceding equation, ftt and qcc are the temperature-dependence, and
Icf and Vcb are the dependence parameters described above.
Using this formulation, the current dependence of the BC capacitance is
included (although it is partially assigned to the BE junction charge, and
partially to the BC junction, through the FEX excess-phase parameter).
You can extract ICRIT and associated parameters from measurements of
Cbc versus Ic.
Note: These parameters also control some of the components of
the forward transit time.
A delay time is associated with specifying ICRIT:
TFC1=CJC*VJC*MJC/(MJC-1)/ICRIT
Use the ICRIT parameter carefully, generally in conjunction
with selecting TFC0 and CJCI in such a way that the sum TFB
+ TFC0 + TFC1 provide a reasonable estimate of charge
storage, similar to TF in Gummel-Poon SPICE.

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■
Extrinsic Base-Collector Charge, Qbcx. The Qbcx stored charge consists of
a depletion charge and a diffusion charge.
Standard SPICE does not use the diffusion charge component. However,
this component can be an important contribution to saturation stored-charge
in many HBTs (in addition to the contribution associated with the intrinsic
base-collector junction).
The corresponding charge storage time, TRX, might be different from the
intrinsic time, TRI. This difference occurs because of implant-induced
recombination, surfaces, or other structural changes.
The depletion charge corresponds to a standard depletion region
expression (without considering charge density modulation due to current),
modified to allow for a minimum value of capacitance under a reach-through
condition.
Furthermore, as indicated in the following, if you assign a value other than
unity to the XCJC variable, then the depletion charge is partitioned between
the Bx-Cx capacitance and the B-Cx capacitance.
Qbcx= TRX*Ibcx + XCJC*Qbcxo
In the preceding equation, Qbcxo is the depletion charge.
As a result the dependences of Ibcx on Vbcx, a diffusion capacitance results
from the formulation:
Cbcxdiff= TRX* dIbcx/dVbcx
Base-Extrinsic Collector Charge (Qbcxx), and Treatment of XCJC
In standard SPICE, XCJC indicates the fraction of overall Cbc depletion
capacitance that should be associated with the intrinsic base node. The
remaining fraction (1-XCJC) is attached to the base terminal. HBT Spice
uses a similar assignment: the depletion charge associated with the
extrinsic base-collector junction is partitioned between the Bx node and the
B node:
Qbcx= TRX*Ibcx + XCJC* Qbcxo
has been defined above, between the Bx and Cx nodes, and charge
Qbcxx= (1-XCJC)*Qbcxxo

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is assigned between the B and Cx nodes. The Qbcxxo charge is computed

with the same algorithm as for Qbcxo by using Vbcxx (rather than Vbcx) as
the voltage.
■
Collector-Substrate Charge, Qcs. This corresponds to a depletion charge,
formulated in the standard SPICE fashion:
For Vcs>-FC*VJS,
Qcs= - CJS*VJS*(1+Vcs/VJS)(1-MJS) / (1-MJS)
Ccs=CJS*(1+Vcs/VJS)(-MJS)
For Vcs<-FC*VJS,
Qcs= -CJS*VJS/(1-FC)MJS*
[(1-FC)/(1-MJS) + FC +Vcs/VJS -MJS/2/(1-FC) *(FC+Vcs/VJS)2]
Ccs=CJS*(1-FC)(-MJS)*[1-MJS/(1-FC)*(FC+Vcs/VJS)}

Noise
The LEVEL=11 model includes noise current generators, similar to those in
standard Spice. The noise current generators have magnitudes in units of A2/
Hz, and are computed based on 1Hz bandwidth. The noise sources are placed
in parallel with corresponding linearized elements in the small signal model.
Sources of 1/f noise have magnitudes that vary with the frequency (f); you can
use a BFN exponent, if you do not see the exact f-1 behavior.
inc2=2*q*Icc
inb2= 2 * q *Ibe + KFN * IbeAFN / f BFN
inre2= 4 * K* Td / RE
inrbx2= 4 * K * Td / RBX
inrbi2= 4 * K * Td / RBI
inrcx2= 4 * K * Td / RCX
inrci2= 4 * K * Td / RCI
inrex2= 4 * K * Td / REX

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Equivalent Circuit

Rcz
Qos
Cx
S

Rci
-
- Qbcz los
lbcz
+ T
+ Qbczz Ci
-
Qbci ibci ibk +
B Bx Rbi + Qth
-
loc Ith Rth
Rbz Rez +
Qbe ibei
Ex -
Ibez
Ei

Re

Figure 39 Circuit Diagram for Large-signal HBT Model

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Rcz
Ccs
Cz
S
ibczq
Rci
Cbcz gcs
gbcz T
Cbzz ibcq gbci ibk ibca Ci
Cbci
+
B Bz Rbi Qth
-
icc Ith Rth
Rbz Rez
gez Ez
Cbe
ibeq gbei ibea
Ei

Re

Figure 40 Circuit Diagram for Small-signal HBT Model

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Example Model Statement for BJT LEVEL=11

.model hbt npn level=11
+ IS=1.2E-18 NF=1 NR=1 BF=200
+ BR=5 VAF=60 VAR=20 ISE=1E-17
+ NE=1.4 ISEX=4E-24 NEX=1.3 ISCX=1E-14
+ NCX=2 ISC=1E-16 NC=2 NA=10
+ ISA=2.18E-10 NB=10 ISB=1E10 RE=16
+ REX=20 RBI=20 BVC=28 NBC=6
+ FA=0.995 RCX =30 RCI=20 CJE=1.8E-14
+ VJE=1.45 CXMIN=1E-16 MJE=0.5 FC=0.8
+ ICRIT0=0.23 CCMIN=3E-15 TR=3.5E-10 VJCX=1.4
+ CJCX=8E-15 MJCX=0.35 XCJC=1 VJS=1.4
+ CJS=5E-16 MJS=0.01 CTH=1E-6 RTH=0
+ EG=1.645 XTI=0 XTB=-1.8 EAA=-0.495
+ EAB=-0.1 EAE=0.105 TNE=0 EAC=0.34
+ XTTF=1.5 ICS=1E-30 NCS=2 CEMIN=1E-15
+ FCE=0.8 TFB=2E-12 TFC0=2.5E-11 TBEXS=1E-14
+ ITC=7E-3 ITC2=0.014 VTC=40 TKRK=5E-13
+ VKRK=10 IKRK=0.012 TRX=3.5E-10 FEX=0
+ XTITC=1.5 XTITC2=1 TREF=25 CJC=7E-15
+ VJC=1.4 MJC=0.35

LEVEL=13 HICUM0 Model

HICUM0 is a simplified bipolar transistor model that combines the simplicity of
the SPICE Gummel-Poon Model (SGPM) with various improvements from
HICUM. The HICUM0 model is implemented as LEVEL=13 in the BJT models.

HICUM0 Model Advantages

Major features of HICUM0 are:
■
strongly circuit-design oriented and easy to understand for circuit designers
■
sufficiently accurate for many applications
■
computationally efficient and fast
■
allows a fast parameter extraction for single transistors

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Chapter 5: BJT Models
LEVEL=13 HICUM0 Model

■
makes use of the advanced capabilities of HICUM LEVEL=2 and the related
knowledge base for generating geometry scalable and statistical models
■ offers an easy migration path from a conventional, single-transistor-based,
to a process-based geometry scalable parameter extraction and model
usage to meet today’s requirements for advanced integrated circuit design.
The model parameters have a clear (physical) meaning and many of them are
similar to HICUM LEVEL=2 parameters.

HICUM0 Model vs. HICUM LEVEL=2 Model

The differences between HICUM0 and HICUM LEVEL=2:
■
The perimeter base node has been eliminated by properly merging the
respective internal and external counterparts of the BE depletion
capacitance (CJE), the base resistance (RB), the BC depletion capacitance
(CJC), and the base current components across the BE and BC junction
■
BE tunneling current, substrate coupling network, parasitic substrate
transistor, and capacitance for modeling AC emitter current crowding in
HICUM LEVEL=2 have been omitted.

LEVEL=13 Element Syntax

Syntax
Qxxx nc nb ne [ns][nt] mname [area] [M=val] [DTEMP=val]

Parameter Description

Qxxx BJT element name

nc Collector terminal node name or number

nb Base terminal node name or number

ne Emitter terminal node name or number

ns Substrate terminal node name or number

nt Self-heating node name or number

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 Chapter 5: BJT Models
LEVEL=13 HICUM0 Model

Parameter Description

mname BJT model name reference

area Emitter area multiplying factor. Affects current, resistance,

capacitance. Default is 1.

M Multiplier to simulate multiple BJTs in parallel. Default is 1.

DTEMP Difference between the element temperature and the circuit

temperature in degrees Celsius. Default is DTA (difference
between the device temperature and the ambient analysis
temperature). If you do not specify DTEMP, then DTEMP uses the
DTA value.

LEVEL=13 Model Parameters

Table 110 lists the HICUM0 LEVEL=13 model parameters.

Table 110 BJT LEVEL=13 Model Parameters

Parameter Unit Default Description

IS A 1e-16 Transform saturation current

MCF - 1 Non-ideality coefficient of forward collector current
MCR - 1 Non-ideality coefficient of inverse collector current
VEF V ∞ Forward Early voltage
IQF A ∞ Forward DC high-injection roll-off current
IQR A ∞ Inverse DC high-injection roll-off current
IQFH A ∞ High-injection correction current
TFH - ∞ High-injection correction factor
CJE0 F 0 BE zero-bias depletion capacitance
VDE V 0.9 BE built-in voltage
ZE - 0.5 BE exponent factor
AJE - 2.5 BE ratio of maximum to zero-bias value

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LEVEL=13 HICUM0 Model

Table 110 BJT LEVEL=13 Model Parameters (Continued)

Parameter Unit Default Description

CJCI0 F 0 BC total zero-bias depletion capacitance

VDCI V 0.7 BC built-in voltage
ZCI - 0.4 BC exponent factor
VPTCI V 1e+20 BC punch-through voltage
T0 sec 0 Low current transit time at VBC=0

DT0H sec 0 Base width modulation contribution

TBVL sec 0 SCR width modulation contribution
TEF0 sec 0 Storage time in neutral emitter
GTE - 1 Exponent factor for emitter transit time
THCS sec 0 Saturation time at high current densities
AHC - 0.1 Smoothing factor for current dependence
TR sec 0 Storage time at inverse operation
RCI0 Ohm 150 Low-field collector resistance under emitter
VLIM V 0.5 Voltage dividing ohmic and saturation region
VPT V ∞ Punch-through voltage
VCES V 0.1 Saturation voltage
IBES A 1e-18 BE saturation current
MBE - 1 BE non-ideality factor
IRES A 0 BE recombination saturation current
MRE - 2 BE recombination non-ideality factor
IBCS A 0 BC saturation current
MBC - 1 BC non-ideality factor
KAVL - 0 Avalanche prefactor
EAVL - 1 Avalanche exponent factor
RBI0 Ohm 0 Internal base resistance value at zero-bias

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 Chapter 5: BJT Models
LEVEL=13 HICUM0 Model

Table 110 BJT LEVEL=13 Model Parameters (Continued)

Parameter Unit Default Description

VR0E V 2.5 Forward Early voltage (normalization voltage)

VR0C V ∞ Reverse Early voltage (normalization voltage)
FGEO - 0.656 Geometry factor
RBX Ohm 0 External base series resistance
CJCX0 F 0 Zero-base external BC depletion capacitance
VDCX V 0.7 External BC built-in voltage
ZCX - 0.4 External BC exponent factor
VPTX V 1e+20 Punch-through voltage
FBC - 1 Split factor=CJCI0/CJC0

RE Ohm 0 Emitter series resistance

RCX Ohm 0 External collector series resistance
CBEPAR(CEOX) F 0 Emitter-base isolation (overlap) capacitance
CBCPAR(CCOX) F 0 Collector-base oxide capacitance
ISCS A 0 SC saturation current
MSC - 1 SC non-ideality factor
CJS0 F 0 Zero-bias SC depletion capacitance
VDS V 0.3 SC built-in voltage
ZS - 0.3 External SC exponent factor
VPTS V 1e+20 SC punch-through voltage
KF M1-AF 0 Flicker noise coefficient (no unit only if AF=2)

AF - 2 Flicker noise exponent factor

VGB V 1.2 Bandgap voltage
VGE V 1.2 Effective emitter bandgap voltage
VGC V 1.2 Effective collector bandgap voltage
VGS V 1.2 Effective substrate bandgap voltage

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LEVEL=13 HICUM0 Model

Table 110 BJT LEVEL=13 Model Parameters (Continued)

Parameter Unit Default Description

F1VG V/K -8.46e-5 Coefficient K1 in temperature-dependent bandgap

equation
F2VG V/K 3.042e-4 Coefficient K2 in temperature-dependent bandgap
equation
ALB 1/K 0 Relative temperature coefficient of forward current gain
ALT0 1/K 0 First-order relative temperature coefficient of T0
KT0 1/K 0 Second-order relative temperature coefficient of T0
ZETACT - 4.5 Exponent coefficient in transfer current temperature
dependence
ZETABET - 5 Exponent coefficient in BE junction current temperature
dependence
ZETACI - 0 Temperature coefficient of epi-collector diffusivity
ALVS 1/K 0 Relative temperature coefficient of saturation drift velocity
ALCES 1/K 0 Relative temperature coefficient of VCES
ZETARBI - 0 Temperature coefficient of internal base resistance
ZETARBX - 0 Temperature coefficient of external base resistance
ZETARCX - 0 Temperature coefficient of external collector resistance
ZETARE - 0 Temperature coefficient of emitter resistance
ALKAV 1/K 0 Temperature coefficient of avalanche prefactor
ALEAV 1/K 0 Temperature coefficient of avalanche exponent factor
TNOM °C 27 Temperature for which parameters are valid
DT °C 0 Temperature change for particular transistor
RTH K/W 0 Thermal resistance
CTH Ws/K 0 Thermal capacitance
VER V ∞ Reverse Early voltage

FIQF - 0 Flag to turn on voltage dependence of base-related

critical current

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 Chapter 5: BJT Models
LEVEL=13 HICUM0 Model

Table 110 BJT LEVEL=13 Model Parameters (Continued)

Parameter Unit Default Description

AHQ - 0 Smoothing factor for the d.c. injection width

VDEDC V 0.9 BE charge built-in voltage for d.c. transfer current
ZEDC - 0.5 BE charge exponent factor for d.c. transfer current
AJEDC - 2.5 BE capacitance ratio (maximum to zero-bias value) for
d.c. transfer current
ZETAIQF - 0.0 Temperature coefficient of IQF
ZETARTH - 0.0 Exponent factor for temperature dependent thermal
resistance

For a complete description of the HICUM0 model, see:

http://www.iee.et.tu-dresden.de/iee/eb/comp_mod.html

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Chapter 5: BJT Models
References

References
[1] C. McAndrew, J. Seitchik, D. Bowers, M. Dunn, M. Foisy, I. Getreu, M.
McSwain, S. Moinian, J. Parker, D. Roulston, M. Schroter, P. van Wijnen,
and L. Wagner, “VBIC95: The vertical bipolar intercompany model,” IEEE
Journal of Solid State Circuits, vol.31, p.1476-1483, 1996.

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 A
A Finding Device Libraries

Lists device libraries you can use in HSPICE.

HSPICE ships hundreds of examples for your use; see Listing of Input
Demonstration Files for paths to demo files.
For libraries with multiple models of a specific active or passive device element,
you can use the automatic model selector in HSPICE to automatically find the
proper model for each transistor size.
This chapter lists device libraries that you can use. It includes the following
topics:
■
Overview of Library Listings
■
Analog Device Models
■ Behavioral Device Models
■
Bipolar Transistor Models
■
Diode Models
■ JFET and MESFET Models

Overview of Library Listings

The following sections list the names of the models provided with HSPICE.
Models are stored by type in directories named after the model type, such as
dio for diodes and bjt for bipolar junction transistors. The directory path is
shown for each model type. You specify the directory path in the .OPTION
SEARCH statement, as in the following example:
.OPTION SEARCH ‘$installdir/96/parts/dio’

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Appendix A: Finding Device Libraries
Analog Device Models

In the preceding syntax, $installdir is the environment variable set to the

path to the software installation directory and 96 is the HSPICE release
number. All model directories are under the parts directory.

Analog Device Models

The search path for analog device models is:
$installdir/parts/ad
Table 111 Analog Model Names

AD581 ad581j ad581k ad581l ad581s

ad581t ad581u ad584 ad584j ad584k

ad584l ad584s ad584t ad587 ad587j

ad587k ad587l ad587s ad587t ad587u

ad600 ad600j ad602 ad602j ad620

ad620a ad620b ad620s ad624 ad624a

ad624b ad624c ad624s ad630 ad630a

ad630b ad630j ad630k ad630s ad633

ad633j ad645 ad645a ad645b ad645j

ad645k ad645s ad704 ad704a ad704b

ad704j ad704k ad704t ad705 ad705a

ad705b ad705j ad705k ad705t ad706

ad706a ad706b ad706j ad706k ad706t

ad711 ad711a ad711b ad711c ad711j

ad711k ad711s ad711t ad712 ad712a

ad712b ad712c ad712j ad712k ad712s

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 Appendix A: Finding Device Libraries
Analog Device Models

Table 111 Analog Model Names (Continued)

ad712t ad713 ad713a ad713b ad713j

ad713k ad713s ad713t ad734 ad734a

ad734b ad734s ad743 ad743a ad743b

ad743j ad743k ad743s ad744 ad744a

ad744b ad744c ad744j ad744k ad744s

ad744t ad745 ad745a ad745b ad745j

ad745k ad745s ad746 ad746a ad746b

ad746j ad746s ad780 ad780a ad780b

ad780s ad797 ad797a ad797b ad797s

ad810 ad810a ad810s ad811 ad812

ad812a ad813 ad813a ad817 ad817a

ad818 ad818a ad820 ad826 ad826a

ad828 ad828a ad829 ad829a ad829j

ad829s ad830 ad830a ad830j ad830s

ad840 ad840j ad840k ad840s ad843

ad843a ad843b ad843j ad843k ad843s

ad844 ad844a ad844b ad844s ad845

ad845a ad845b ad845j ad845k ad845s

ad846 ad846a ad846b ad846s ad847

ad847a ad847j ad847s ad848 ad848a

ad848j ad848s ad9617 ad9618 ad9621

ad9622 ad9623 ad9624 ad9630 adg411

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Analog Device Models

Table 111 Analog Model Names (Continued)

adg411b adg411t adg412 adg412b adg412t

adg413 adg413b adg413t amp01 amp02

buf04 mat02 mat03 mat04 mlt04

mlt04g op160 op160a op160f op160g

op176 op176g op177 op177a op177b

op177e op177f op177g op20 op200

op200a op200e op200f op200g op20b

op20c op20f op20g op20h op21

op213 op215 op215a op215b op215c

op215e op215f op215g op21a op21e

op21f op21g op21h op220 op220a

op220c op220e op220f op220g op221

op221a op221b op221c op221e op221g

op249 op249a op249e op249f op249g

op260 op27 op275 op275g op27a

op27b op27c op27e op27f op27g

op282 op282g op283 op285 op285g

op290 op290a op290e op290f op290g

op292 op295 op297 op297a op297e

op297f op297g op37 op37a op37b

op37c op37e op37f op37g op400

op400a op400e op400f op400g op400h

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Analog Device Models

Table 111 Analog Model Names (Continued)

op41 op41a op41b op41e op41f

op41g op42 op420 op420b op420c

op420f op420g op420h op421 op421b

op421c op421f op421g op421h op42a

op42e op42f op42g op43 op43a

op43b op43e op43f op43g op44

op467 op467g op470 op482 op482g

op490 op490a op490e op490f op490g

op492 op497 op497a op497b op497c

op497f op497g op61 op64 op77

op77a op77b op77e op77f op77g

op80 op80b op80e op80f op80g

op90 op90a op90e op90f op90g

op97 op97a op97e op97f pm1012

ref01 ref01a ref01c ref01e ref01h

ref02 ref02a ref02c ref02d ref02e

ref02h ref05 ref05a ref05b ref10

ref10a ref10b ssm2017 ssm2017p ssm2131

ssm2210 ssm2220

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Behavioral Device Models

Behavioral Device Models

The search path for behavioral device models is:
$installdir/parts/behave
The required element syntax is:
Xyyyyy in- in+ out vcc vee modelname
Optional parameters are:
vos=value, ibos=value, av=value
Table 112 Behavioral Model Names

ad4bit ad8bit alf155 alf156 alf157

alf255 alf347 alf351 alf353 alf355

alf356 alf357 alf3741 alm101a alm107

alm108 alm108a alm111 alm118 alm124

alm124a alm139a alm1458 alm1558 alm158

alm158a alm201a alm207 alm208 alm208a

alm224 alm258 alm258a alm2901 alm2902

alm2904 alm301a alm307 alm308 alm308a

alm318 alm324 alm3302 alm339 alm358

alm358a alm725 alm741 alm747 alm747c

amc1458 amc1536 amc1741 amc1747 ane5534p

anjm4558 anjm4559 anjm4560 aop04 aop07

aop14 aop15b aop16b at094cns atl071c

atl072c atl074c atl081c atl082c atl084c

atl092cp atl094cn aupc1251 aupc358 ga201

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Bipolar Transistor Models

Table 112 Behavioral Model Names (Continued)

rcfilt tline

Bipolar Transistor Models

The search path for bipolar transistor models is:
$installdir/parts/bjt
The required element syntax is:
Xyyyy coll base emit modelname
Optional parameters are:
betaf=value, tauf=value
Table 113 Bipolar Transistor Model Names

t2n1132a t2n2102 t2n2219a t2n2222 t2n2222a

t2n2369 t2n2369a t2n2501 t2n2605 t2n2642

t2n2857 t2n2894 t2n2904 t2n2904a t2n2905

t2n2905a t2n2906 t2n2907 t2n2907a t2n2945a

t2n3013 t2n3227 t2n3250 t2n3250a t2n3251

t2n3251a t2n3467 t2n3501 t2n3546 t2n3637

t2n3742 t2n3743 t2n3866 t2n3904 t2n3906

t2n3946 t2n3947 t2n3962 t2n4261 t2n4449

t2n5058 t2n5059 t2n5179 t2n6341 t2n6438

t2n706 t2n708 t2n869 t2n869a t2n918

t2n930 t2sa1015 t2sa950 t2sa965 t2sa970

t2sc1815 t2sc1923 t2sc2120 t2sc2235 t2sc2669

tmps6595 tne741 tne901

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Diode Models

Diode Models
The search path for diode models is:
$installdir/parts/dio
The required element syntax is:
Xyyyyy anode cathode modelname
Optional parameters are:
isat=value, tt=value
Table 114 Diode Model Names

d12bg11 d12bh11 d12dg11 d12dh11 d12fg11

d12fh11 d12gg11 d12gh11 d12jg11 d12jh11

d1n3016 d1n3017 d1n3018 d1n3019 d1n3020

d1n3021 d1n3022 d1n3023 d1n3024 d1n3025

d1n3026 d1n3027 d1n3028 d1n3029 d1n3030

d1n3031 d1n3032 d1n3033 d1n3034 d1n3035

d1n3036 d1n3037 d1n3038 d1n3039 d1n3040

d1n3041 d1n3042 d1n3043 d1n3044 d1n3045

d1n3046 d1n3047 d1n3048 d1n3049 d1n3050

d1n3051 d1n3821 d1n3822 d1n3823 d1n3824

d1n3825 d1n3826 d1n3827 d1n3828 d1n3829

d1n3830 d1n4001 d1n4002 d1n4003 d1n4004

d1n4005 d1n4006 d1n4007 d1n4148 d1n4149

d1n4150 d1n4370 d1n4371 d1n4372 d1n4446

d1n4447 d1n4448 d1n4449 d1n4728 d1n4729

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Diode Models

Table 114 Diode Model Names (Continued)

d1n4730 d1n4731 d1n4732 d1n4733 d1n4734

d1n4735 d1n4736 d1n4737 d1n4738 d1n4739

d1n4740 d1n4741 d1n4742 d1n4743 d1n4744

d1n4745 d1n4746 d1n4747 d1n4748 d1n4749

d1n4750 d1n4751 d1n4752 d1n4753 d1n4754

d1n4755 d1n4756 d1n4757 d1n4758 d1n4759

d1n4760 d1n4761 d1n4762 d1n4763 d1n4764

d1n5221 d1n5222 d1n5223 d1n5224 d1n5225

d1n5226 d1n5227 d1n5228 d1n5229 d1n5230

d1n5231 d1n5232 d1n5233 d1n5234 d1n5235

d1n5236 d1n5237 d1n5238 d1n5239 d1n5240

d1n5241 d1n5242 d1n5243 d1n5244 d1n5245

d1n5246 d1n5247 d1n5248 d1n5249 d1n5250

d1n5251 d1n5252 d1n5253 d1n5254 d1n5255

d1n5256 d1n5257 d1n5258 d1n5259 d1n5260

d1n5261 d1n5262 d1n5263 d1n5264 d1n5265

d1n5266 d1n5267 d1n5268 d1n5269 d1n5270

d1n5271 d1n5272 d1n5333 d1n5334 d1n5335

d1n5336 d1n5337 d1n5338 d1n5339 d1n5340

d1n5341 d1n5342 d1n5343 d1n5344 d1n5345

d1n5346 d1n5347 d1n5348 d1n5349 d1n5350

d1n5351 d1n5352 d1n5353 d1n5354 d1n5355

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Diode Models

Table 114 Diode Model Names (Continued)

d1n5356 d1n5357 d1n5358 d1n5359 d1n5360

d1n5361 d1n5362 d1n5363 d1n5364 d1n5365

d1n5366 d1n5367 d1n5368 d1n5369 d1n5370

d1n5371 d1n5372 d1n5373 d1n5374 d1n5375

d1n5376 d1n5377 d1n5378 d1n5379 d1n5380

d1n5381 d1n5382 d1n5383 d1n5384 d1n5385

d1n5386 d1n5387 d1n5388 d1n5817 d1n5818

d1n5819 d1n5913 d1n5914 d1n5915 d1n5916

d1n5917 d1n5918 d1n5919 d1n5920 d1n5921

d1n5922 d1n5923 d1n5924 d1n5925 d1n5926

d1n5927 d1n5928 d1n5929 d1n5930 d1n5931

d1n5932 d1n5933 d1n5934 d1n5935 d1n5936

d1n5937 d1n5938 d1n5939 d1n5940 d1n5941

d1n5942 d1n5943 d1n5944 d1n5945 d1n5946

d1n5947 d1n5948 d1n5949 d1n5950 d1n5951

d1n5952 d1n5953 d1n5954 d1n5955 d1n5956

d1n746 d1n747 d1n748 d1n749 d1n750

d1n751 d1n752 d1n753 d1n754 d1n755

d1n756 d1n757 d1n758 d1n759 d1n914

d1n957 d1n958 d1n959 d1n960 d1n961

d1n962 d1n963 d1n964 d1n965 d1n966

d1n967 d1n968 d1n969 d1n970 d1n971

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JFET and MESFET Models

Table 114 Diode Model Names (Continued)

d1n972 d1n973 d1n974 d1n975 d1n976

d1n977 d1n978 d1n979 d1n980 d1n981

d1n982 d1n983 d1n984 d1n985 d1n986

d1s1585 d1s1586 d1s1587 d1s1588 d1sv147

d1sv149 dmbr115p dmbr120p dmbr130p dmbr140p

dsk4a3

JFET and MESFET Models

The search path for JFET and MESFET models is:
$installdir/parts/fet
The required element syntax is:
Xyyyy drain gate source modelname
Optional parameters are:
vt=value, betaf=value
Table 115 FET Model Names

J108 J109 J110 J111 J112

j113 j2n3330 j2n3460 j2n3824 j2n4391

j2n4392 j2n4393 j2n4856 j2n4857 j2n5457

j2n5458 j2n5459 j2n5460 j2n5461 j2n5462

j2n5463 j2n5465 j309 j511 j557

jsj74 jsk170 m2n6755 m2n6756 m2n6757

m2n6758 m2n6759 m2n6760 m2n6761 m2n6762

m2n6763 m2n6764 m2n6765 m2n6766 m2n6767

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JFET and MESFET Models

Table 115 FET Model Names (Continued)

m2n6768 m2n6769 m2n6770 m2n6787 m2n6788

m2n6789 m2n6790 m2n6791 m2n6792 m2n6793

m2n6794 m2n6795 m2n6796 m2n6797 m2n6798

m2n6799 m2n6800 m2n6801 m2n6802 mbuz10

mbuz20 mbuz23 mbuz24 mbuz32 mbuz35

mbuz36 mbuz42 mbuz45 mbuz46 mbuz60

mbuz63 mbuz64 mbuz71 mbuz72a mbuz74

mbuz76 mirf120 mirf121 mirf122 mirf123

mirf130 mirf131 mirf132 mirf133 mirf140

mirf141 mirf142 mirf143 mirf150 mirf151

mirf152 mirf153 mirf220 mirf221 mirf222

mirf223 mirf230 mirf231 mirf232 mirf233

mirf240 mirf241 mirf242 mirf243 mirf250

mirf251 mirf252 mirf253 mirf320 mirf321

mirf322 mirf323 mirf330 mirf331 mirf332

mirf333 mirf340 mirf341 mirf342 mirf343

mirf350 mirf351 mirf352 mirf353 mirf420

mirf421 mirf422 mirf423 mirf430 mirf431

mirf432 mirf433 mirf440 mirf441 mirf442

mirf443 mirf450 mirf451 mirf452 mirf453

mirf510 mirf511 mirf512 mirf513 mirf520

mirf521 mirf522 mirf523 mirf530 mirf531

328 HSPICE® Reference Manual: Elements and Device Models

E-2010.12
 Appendix A: Finding Device Libraries
JFET and MESFET Models

Table 115 FET Model Names (Continued)

mirf532 mirf533 mirf540 mirf541 mirf542

mirf543 mirf610 mirf611 mirf612 mirf613

mirf620 mirf621 mirf622 mirf623 mirf630

mirf631 mirf632 mirf633 mirf640 mirf641

mirf642 mirf643 mirf710 mirf711 mirf712

mirf713 mirf720 mirf721 mirf722 mirf723

mirf730 mirf731 mirf732 mirf733 mirf740

mirf741 mirf742 mirf743 mirf810 mirf811

mirf812 mirf813 mirf820 mirf821 mirf822

mirf823 mirf830 mirf831 mirf832 mirf833

mirf840 mirf841 mirf842 mirf843 mirf9020

mirff110 mirff111 mirff112 mirff113 mirff120

mirff121 mirff122 mirff123 mirff130 mirff131

mirff132 mirff133 mirff210 mirff211 mirff212

mirff213 mirff220 mirff221 mirff222 mirff223

mirff230 mirff231 mirff232 mirff233 mirff310

mirff311 mirff312 mirff313 mirff320 mirff321

mirff322 mirff323 mirff330 mirff331 mirff332

mirff333 mirff430 mirff431 mirff432 mirff433

Transmission Line Models

Table 116 lists the Transmission Line models that you can use in HSPICE.

HSPICE® Reference Manual: Elements and Device Models 329

E-2010.12
Appendix A: Finding Device Libraries
JFET and MESFET Models

Search path: $installdir/parts/tline

Table 116 Transmission Line Model Names

rcfilt rg11_u rg11a_u rg15_u rg180b_u

rg188a_u rg53_u rg54a_u rg58a_u rg58c_u

rg59b_u rg62_u rg62b_u rg71_u rg71b_u

rg9_u rg9b_u tw_sh_u tw_un_u

330 HSPICE® Reference Manual: Elements and Device Models

E-2010.12
 Index

A bidirectional circuits, wire RC model 8

A model parameter 42 BJT Level 10 272
AB model parameter 80 charges 284
circuit schematics 277
ACM 111
current 281
model parameter 111
parameter equations 128 depletion capacitance 289
equations 280
ALPHA model parameter 42
noise equations 287
analog device models 318
operating point 278
analysis, noise 220 series resistance 287, 289
area temperature 288, 289
calculation method See ACM
JFETs and MESFETs transistor process parameters 273
equations 128–130 BJT Level 9, syntax 264
units 128, 130 BJTs
base
AREA capacitor parameter 53
charge equations 191
push-out effects 206
B width modulation model parameters 166
base base-collector
charge equations 191 depletion capacitance equations 195
collector capacitance 195 diffusion capacitance equations 195
resistance equations 192 base-emitter
base-collector depletion capacitance equations 194
charge 303, 305 diffusion capacitance equations 193
depletion charge 303 beta
diffusion charge 303 degradation 163
temperature equations 200–202
diode 299
capacitance temperature equations 203
junction 163
base-emitter conductance 178, 179
capacitance equations 193 current equations 189
charge 300 DC models 163
depletion charge 300 equations 189
diffusion charge 301 parameters 163
junction 163 energy gap temperature equations 199
equations 188
base-emitter diode 298
basic model parameters equivalent circuits 176, 178
JFETs TOM model 146 excess phase equation 197
geometric 163
behavioral device models 322
high current Beta degradation parameters 167
beta degradation 163 junction capacitance
BiCMOS equations 196
circuits 160 model parameters 168
devices 160
junction capacitor 163

331
Index
C

LEVEL 2 BUS wire RC model 8

model parameters 170 BV diode model parameter 50
temperature equations 205 BYPASS option 51, 110, 163
LEVEL 4, model parameters 215–220
LEVEL 8 HiCUM
parameters 249 C
LEVEL 8, HiCUM 243 capacitance 73
low current Beta degradation parameters 163 base collector 195
.MODEL statement 161 DCAP 52, 161
models DCCAP 52, 161
constants (table) 119, 186 diode, Fowler-Nordheim 97
convergence 161 distribution for wire RC model 9
names 161 effective 34
parameters 163, 215–220 equations
quasi-saturation 206 BJTs 193, 194, 195, 196
statement 161 depletion 73
transistor 323 diffusion 73
variables (table) 184 diode 73
noise 164 metal and poly 74
equations 198 GMIN 161
model parameters 170 GMINDC 161
summary printout 198 input-output ratio 9
npn identifier 161 JFETs 113
parasitic capacitance 164 JFETs and MESFETs 113, 130–134
parasitics CAPOP=2 parameters 133
capacitance model parameters 169 equations 114
resistance model parameters 167 gate to drain 112
resistor temperature equations 205 source to gate 112
pnp identifier 161 junction, internal collector 196
quasi-saturation model 206 model 32
resistor 163 parameters 33
saturation temperature equations 200–202 parameters 33
scaling 177 BJTs 168
subcircuits, scaled 212 junction 59
substrate
parasitic 9, 169
capacitance equations 197
substrate 197
current equation 190
temperature temperature 35
capacitance equations 203 BJT equations 203
compensation equations 199 equations 35
effect parameters 172 VBIC99 269
parasitic resistor 205 voltage 35
saturation equations 201 wire, equations 13
transit time 164 capacitance equations, TOM3 149
model parameters 169 capacitor
variable base resistance equations 192 BJT 164
DC sweep evaluation 193
breakdown current 299
device
bulk semiconductor devices 109 equations 34
BULK wire model parameters 10 model 32

332
 Index
D

element 32 ferromagnetic 41
equation selector option 51 model parameters 39
equations 114 magnetic 37
models, SPICE 112 element output 39
parameters model parameters 37
junction 168 model parameters 39
metal and poly 59 A 42
temperature, equations 15 ALPHA 42
CAPOP model parameter 111 MS 42
charge current
base-collector 303, 305 BJT Level 10 281
base-emitter 300 breakdown 299
substrates 306 collector 298
VBIC99 269 convention
charge stoarge, HBT model 300 BJTs 177
charges, BJT Level 10 284 JFETs 114
circuit schematics diodes 63
BJT Level 10 277 epitaxial 208
HBT model 307 HBT model 298
circuits Curtice model 111, 127
BiCMOS 160
BJT 176, 178
ECL 160
D
DC
TTL 160
BJT 163
CJBR model parameter 81 equations
CJGR model parameter 81 JFETs and MESFETs 135–137
CJSR model parameter 81 equations, BJTs 189
CMC R2 resistor model 20 parameters
collector current 298 JFETs LEVEL=1 126
collector diode, substarte 300 JFETs LEVEL=2 126
JFETs LEVEL=3 128
collector-substrate junction 163
conductance DC equations, TOM3 148
BJTs 178, 179 DC model, JFET Level 8 153
diodes 64 DC operating point, BJT Level 10 278
GMIN 52 DCAP 51, 161
GMINDC 52 equation selector 161
JFETs 113 option 51
JFETs and MESFETs 113, 115 JFETs and MESFETs capacitance 113
control options 113 JFETs and MESFETs models 113
convergence 52 overriding in BJTs models 161
setting 50 DCCAP 51, 161
convergence option 51, 193
BJT model 161 JFETs and MESFETs capacitance 113
JFETs and MESFETs 113 depletion
problems capacitance
diodes 52 DCAP equation selector 52, 113, 161
core equations 73
Jiles-Atherton 37 depletion capacitance, BJT Level 10 289

333
Index
E

depletion charge geometric 50

base-collector 303 model 53
base-emitter 300 parameters 55
device temperature 66
capacitor, equations 34 junction capacitance models 78
inductor, equations 40 metal model capacitance parameters (table) 59
dielectric models 324
constant 14 define 63
thickness, wire model parameters 11 levels 50
diffusion capacitance equations 73 noise parameters (table) 59
diffusion charge regions 70
base-collector 303 statements 50
base-emitter 301 using 49
diodes variables (table) 69
barrier 49 noise equations 74
base collector 299
nongeometric junction 50
base emitter 298
nonvolatile memory 49
capacitance 73
poly model capacitance parameters (table) 59
calculations 51 scaling
equations 73 options 51
Fowler-Nordheim 97 parameters 61–63
collector 300 Schottky, barrier 49
conductance 64 series resistance units 59
control options 50 temperature
convergence problems 52 compensation equations 75
current 63 effects 66
DC parameters 122 types 50
equations 69–78 Zener 49, 50
breakdown voltage 76 See also junction diodes
contact potential 76 DTA model parameter 80
depletion capacitance 73
diffusion capacitance 73
energy gap 75
E
Fowler-Nordheim diodes 96 Ebers-Moll model 159, 162
grading coefficient 78 ECL
junction capacitance 77 circuits 160
leakage current 75 devices 160
LEVEL=3 metal 74 effective capacitance calculation 34
LEVEL=3 poly 74 effects, VBIC99 265
resistance 78 element
transit time 76 capacitors 32
equivalent circuits 64, 64–66 linear inductors 36
statements
Fowler-Nordheim 50, 95
capacitor 32
equations 96
linear inductor 36
junction 49
subcircuits 4
capacitance parameters 59
element parameters
DC equations 70
capacitors 32–36
DC parameters 55
diodes 53
equations 69

334
 Index
F

AREA 61 BJTs 201

M 61, 62 capacitance 35, 203
element statements, BJT 176 compensation 75, 199
energy gap temperature equations inductor 40
BJTs 199 JFETs and MESFETs 140
JFETs and MESFETs 142 variable
epitaxial definitions 69
charge 209 names 184
current source 208 names and constants 117
equations wire
ACM parameters 128 capacitance 13
BJT Level 10 280 resistance 12
BJTs equivalent
DC models 189 circuit
noise 198 BJTs 178
parasitic resistor 205 JFETs 114, 115
parasitic resistor temperature 205 MESFETs 114
temperature 199, 201 errors
capacitance bulk node not specified 15
depletion 73 negative slope for magnetization level 42
diffusion 73 reference to undefined inductor 41
diodes 73 example
effective 34 hysteresis 45
metal and poly 74 parameter extraction 46
temperature 35, 203 subcircuit 4
capacitor 114 examples
device 32, 34 HBT model 309
DC VBIC99 272
JFETs and MESFETs 135 excess phase 197
junction 70
device
capacitor 34
F
inductor 40 ferromagnetic core 37
diodes 73 model 41
Fowler-Nordheim 96 field effect transistor, models 327
junction 69 flicker noise 16
HBT model 298 Fowler-Nordheim diodes 50, 52
inductor capacitances 97
device 36, 40 equations 96
temperature 40 model parameters 95
noise 138 using 95
BJTs 198 frequency, low model parameters 162
junction diode 74
resistor
device 8 G
model 12 gate capacitance
noise 15 diode DC parameters, JFETs 122–123
temperature 15 equations, JFETs and MESFETs 130–134
substrate current 190 parameters
temperature JFETs 124–125

335
Index
H

temperature equations, JFETs and MESFETs coupling 41

143 device
gate capacitance model, JFET Level 8 154 equations 40
geometric model parameter 163 model 36
geometry linear 36
ACM 128 branch relations 41
JFETs and MESFETs parameters 114 temperature, equation 40
SCALE 52 insulation breakdown devices 95
SCALM 52
substrate diode 188 J
global scaling, overriding 51, 114
JFET Level 7 147
GMIN 52, 161
JFET Level 8 152
option 113
DC model 153
GMINDC 52, 161
example 156
option, JFETs and MESFETs conductance 113
gate capacitance model 154
GRAMP conductance option 113 noise model 155
Gummel-Poon model 159, 206 parameters 153
JFETs
H capacitance
equations 114, 130
HBT model 291 parameters 133
charge storgae 300 CAPOP=2 model parameters 133
circuit schematics 307 convergence 113
current 298 current convention 114
equations 298 DC model
example 309 equation selector 120
noise 306 LEVEL 1 parameters 125–126
parameters 292 LEVEL 2 parameters 126
temperature 291 LEVEL 3 parameters 127–128
UCSD 291 voltage equations 135
HiCUM model equivalent circuits 114, 115
BJT level 13 309 gate
BJT level 8 243 capacitance parameters 124–125
HiCUM model, BJT parameters 249 diode DC parameters 122–123
hysteresis, Jiles-Atherton example 45 model
constants 117
names 120
I parameters 120
IKF model parameter 160 specifying 110
IKR model parameter 160 statements 119
implementation, VBIC99 265 variables 117
improved effects, VBIC99 265 n-channel specification 120
inactive devices noise
See latent devices equations 138
inductance parameters 138
mutual 41 summary printout 139
temperature equation 40 output conductance 115
inductors overview 109
core models 37

336
 Index
K

p-channel specification 120 L

scaling 114 L capacitor parameter 53
temperature
equations 140, 142–145 latency option 51, 110, 163
latent devices
parameters 140
BYPASS option 51, 110, 163
TOM model parameters 146
bypassing 51, 110, 163
transconductance 115
LEVEL
Jiles-Atherton
example diode parameter 50
hysteresis 45 model selector 110
parameter extraction 46 Level 10 272
model 37, 41 charges 284
parameters 39 circuit schematics 277
JSDBR model parameter 81 current 281
depletion capacitance 289
JSDGR model parameter 81
equations 280
JSDSR model parameter 81
noise equations 287
JSGBR model parameter 80 operating point 278
JSGGR model parameter 81 series resistance 287, 289
JSGSR model parameter 81 temperature 288, 289
Juncap diode transistor process parameters 273
electrical variable 83
Level 11 model 291
leakage 87
Level 7 147
Juncap diodes
equations 83 Level 8 152
model parameters 80, 92 DC model 153
junction example 156
capacitance 164 gate capacitance model 154
capacitor parameters 168 noise model 155
DC 70 parameters 153
diodes LG model parameter 80
element parameters 53 libraries
equations 69 device 317
geometric 52 listings 317
nongeometric 52 LM capacitor parameter 53
parameters 53 low-frequency large-signal characteristics 162
Silicon diffused 49 LP capacitor parameter 53
temperature 66 LS model parameter 80
model
parameters 54
statement 53 M
setting M
capacitance parameters 59 capacitor parameter 53
DC LEVEL=1 and 3 parameters 55 element parameter 62
junction capacitance models 78 magnetic core 37
Junction diode, ON/OFF 85 element outputs 39
models
ferromagnetic core 41
K parameters 37, 38, 46
K model parameters 43 saturable core 36

337
Index
M

statement 37 parasitics, capacitance 169

outputs (table) 39 parasitics, resistance 167
Materka model 152 temperature, effects 172–176
MBYPASS option 51, 110, 163 temperature, parameters 171
MESFETs transistor 161
capacitance equations 114, 130 transit time 169
CAPOP=2 model parameters 133 BV 50
control options 113 capacitance 33
convergence 113 DCAP 113
DC diodes 53
model equation selector 120 junction 53, 54
voltage equations 135 level 50
equivalent circuits 114 noise 60
models scaling 62
constants 117 temperature 67–69
names 120 diodes, junction
parameters 120 AREA 55
specifying 110 BV 58
statements 119 capacitance 59
variables 117 DC 55–58
n-channel specification 120 LEVEL 54, 57
noise model 53, 57
equations 138 model names 53
parameters 138 Ebers-Moll 162
summary printout 139 Fowler-Nordheim diodes 96
overview 109 geometry, JFETs and MESFETs 114
p-channel specification 120 IKF 160
scaling 114 IKR 160
temperature JFETs 133, 138, 146
equations 140, 142–145 ACM 128
metal and poly capacitance equations 74 capacitance 133
MEXTRAM 504 noise parameterss 237 DC, LEVEL=1 125, 126
MEXTRAM504 output templates 238 DC, LEVEL=2 126
mobility temperature equations, JFETs, MESFETs DC, LEVEL=3 127–128
145 gate capacitance 124–125
model parameters gate diode DC 122–123
BJT level 13 noise 138
Level 13, HiCUM 311 temperature 140–142
BJT level 8
JFETs and MESFETs 120
Level 8, HiCUM 249
DCAP 113, 130
BJTs 171
GMIN 113
base width modulation 166
LEVEL 120
beta degradation 162
level selector 110
high current Beta degradation 167
NIF 120
junction capacitance 168
PIF 120
LEVEL 2 170
See also model parameters, JFETs or model
low current Beta degradation 163 parameters, MESFETs
model name 161 magnetic cores 38–39
noise 170 MESFETs

338
 Index
N

noise 138 passive device 7

See also model parameters, JFETs quasi-saturation 206
metal and poly capacitors 60 resistor equations 12
SUBS 160 scaling, diode 61
TOM model 146 selecting 110
wire models 9, 10–11 SPICE capacitor 112
table 12 Statz 111
.MODEL statement 53 subcircuit MULTI 4
BJTs 161 transient 163
capacitance 33 VBIC bipolar transistor 214
diode junction 53 VBIC99 263
ferromagnetic cores 37 wire
magnetic core 37 RC 8
wire RC 8 MS model parameter 42
.MODEL statements and MESFETs 119 MULTI 4
models multiply parameter 4
ACM selector 111 mutual inductor coupling coefficient 41
BJTs
HiCUM 243
quasi-saturation 206 N
statement 161 National Semiconductor model 211
capacitance 32 converting 105
capacitors, model selector 111 NB model parameter 81
Curtice 111 NG model parameter 81
device noise
capacitor 32 analysis 220
inductor 36 BJTs 164
resistor 8 equations
diode 50 BJTs 198
define 63 JFETs and MESFETs 138
junction 53 junction diode 74
scaling 61 resistor 15
statements 50 HBT model 306
Ebers-Moll 159, 162 JFETs and MESFETs
ferromagnetic cores 41 equations 138
Gummel-Poon 159 summary printout 139
HBT 291 parameters 59, 170
JFETs and MESFETs BJTs 170
capacitor 112 resistor 15
DC models 109 equation 15
Jiles-Atherton core 41 thermal 15
junction VBIC99 271
parameters 54 noise equations, BJT Level 10 287
statement 53
noise model, JFET Level 8 155
Level 11 291
noise parameters, MEXTRAM 504 237
Level 2 R2_CMC resistor 20
magnetic core 37 nonvolatile memory diodes 49
National Semiconductor 105, 211 notes for VBIC99 264
parameters, Fowler-Nordheim 95 NS model parameter 81

339
Index
O

O BJT LEVEL 2 170

ON/OFF Condition 85 Fowler-Norheim 95
Jiles-Atherton core 39
operating point, BJT Level 10 278
.OPTION Juncap 80, 92
DCAP 51, 161 junction 54
DCCAP 51 magnetic core 37
GMIN 52, 161 noise 59
GMINDC 52, 161 BJTs 170
GRAMP 161 resistance 167
MBYPASS 110, 163 temperature, JFETs and MESFETs 140
MBYPASs 51 TOM3 150
SCALE 51, 61, 62 transient model 163
SCALM 51, 61, 62 transistor process 273
SHRINK 62 transit time 163, 169
options VBIC 214
control, setting 50 VBIC99 266
convergence 52 parasitic
output capacitance 169
magnetic core 39 BJT parameters 164, 169
LX1 - LX7 39 RC wire model 9
resistance
output templates, MEXTRAM 504 238
parameters, BJTs 167
temperature equations, BJTs 205
P temperature equations, JFETs and MESFETs
.PARAM statement 4 145
parameters PB model parameter 81
AREA 53 PG model parameter 81
base width 166 Philips MODELLA 272
BJT LEVEL 2 170 PJ capacitor, parameter 53
capacitance 33 PS model parameter 81
capacitor
junction 168
metal and poly 59 Q
DC model 162 Qbci 303
Ebers-Moll 162 Qbcj 303
extraction example 46 Qbcm 304
HBT model 292 Qbcx 305
high-current beta degradation 167
Qbcxx 305
JFET Level 8 153
junction Qbediff 301
capacitor 163 Qbej 300
diode 53 Qcs 306
setting, capacitance 59 quasi-saturation BJT model 206
setting, DC LEVEL=1 and 3 55
limit checking
capacitor device 34
R
magnetic core 40 R2_CMC resistor model 20
low-current beta degradation 163 RC wire model 8
model resistance parameters 167

340
 Index
S

resister call subcircuit 4

thermal noise 16 model 7
resistor BJTs 161
BJTs 163 junction 53
device model 8 X4
flicker noise 16 Statz model 110, 111, 127
model equations 12 capacitance equations 133
noise 15
storing charges 300
equation 15 subcircuits
temperature 15 BJTs 212
equations 15 call statement 4
wire model parameters 12 calling 3
element names 4
S model names 4
saturable core models 36 multiply parameter 4
saturation node names 4
current temperature equations, JFETs and parameter 4
MESFETs 143 SUBS model parameter 160
temperature equations, BJTs 200 substrate
SCALE 51 capacitance equations 197
option 12, 34, 51, 61, 62 current equations 190
scale diodes 176
diode parameters 62 substrates
JFETs and MESFETs 113 charge 306
parameters 114 collector diode 300
scaling syntax, BJT Level 9 264
BJTs 177
diode model 61
global vs model 51
T
temperature
JFETs 113
BJT Level 10 288, 289
options 51 BJTs
SCALM 51 beta equations 200–202
option 12, 34, 51, 61, 62 capacitance equations 203
JFETs and MESFETs scaling 113 energy gap equations 199
parameter in a diode model statement 51 LEVEL 2 equations 205
schematics parameters 171
BJT Level 10 277 parasitic resistor equations 205
HBT mode 307 saturation equations 200–202
Schottky barrier diodes 49 capacitor equations 15
self-heating, VBIC99 271 compensation
series resistance, BJT Level 10 287, 289 equations 75
SHRINK diodes 66
model parameter 12, 34 effect parameters
option 62 BJTs 172
SPICE junction diodes 66
compatibility 128 equations
depletion capacitor model 112 BJTs 200
statements BJTs, LEVEL=2 205

341
Index
U

breakdown voltage 76 lateral 181, 183, 188

capacitance 77 geometry 188, 208
contact potential 76 substrate diodes 176
energy gap 75 geometry 188
FJET’s and MESFETs 140 vertical 182, 184, 188
grading coefficient 78 geometry 188, 207
leakage 75 VBIC 214
resistance 78 transit time
resistor 15 BJTs 164
transit time 76 parameters 169
HBT model 291 transmission lines, models 329
inductor 40 TriQuint model 110
JFETs extensions 145
equations 140, 142–145 LEVEL 3 parameters 146
TLEV parameter 140 See also TOM model
TLEVC parameter 140 TriQuint TOM3 147
junction diodes 66 TTL
MESFETs equations 140, 142–145 circuits 160
parameters 140 devices 160
JFETs 140
JFETs and MESFETs 140
reference U
model parameters 11 UCSD, HBT model 291
resistor equations 15
VBIC99 270 V
thermal noise 15, 16
VB model parameter 81
threshold temperature equations, JFETs and
VBIC
MESFETs 144
model (vertical bipolar inter-company) 214
TOM model 145
noise analysis 220
LEVEL 3 parameters 146
parameters 214
parameters 146 VBIC99
See also TriQuint model
capacitance 269
TOM3
charge 269
capacitance equations 149
example 272
DC equations 148
implementation 265
parameters 150
improved effects 265
TOM3 model 147
noise 271
TR model parameter 80
notes 264
transconductance, JFETs and MESFETs 115 parameters 266
transient self-heating 271
lateral 179 temperature 270
vertical 180
VBIC99 model 263
transistor process parameters
BJT Level 10 273 VDBR model parameter 81
transistors VDGR model parameter 81
BJTs VDSR model parameter 81
AC analysis 181, 182 voltage, JFETs and MESFETs DC models 135
AC noise analysis 183, 184 VR model parameter 80
transient analysis 179, 180

342
 Index
W

W distribution 9
W capacitor parameter 53 model RC 8
warnings resistance 12
capacitance too large 34, 40 WM capacitor parameter 53
invalid value for CRATIO 9 WP capacitor parameter 53
IS parameter too small 57
resistance smaller than RESMIN 13 X
wire
capacitance 13 X statement 4
model XCJC 305
effective length and width 12
parameters 8, 12 Z
resistance calculation 12
model capacitance Zener diodes 50
calculation 13

343
Index
Z

344