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Experiment 4: Circuit Used For Experiment - Symmetric CMOS Inverter

The document summarizes an experiment analyzing the characteristics of a CMOS inverter circuit. It measures the voltage transfer curve and noise margins as the width of the MOSFETs is varied. It also analyzes the rise time, fall time, propagation delay, power dissipation, and effect of temperature on the circuit. The propagation delay decreases as the width increases. Both average and peak power also increase with larger MOSFET width. Higher temperatures cause the current to decrease and voltage transfer curve to shift left.

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Ayush Vatsal
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66 views8 pages

Experiment 4: Circuit Used For Experiment - Symmetric CMOS Inverter

The document summarizes an experiment analyzing the characteristics of a CMOS inverter circuit. It measures the voltage transfer curve and noise margins as the width of the MOSFETs is varied. It also analyzes the rise time, fall time, propagation delay, power dissipation, and effect of temperature on the circuit. The propagation delay decreases as the width increases. Both average and peak power also increase with larger MOSFET width. Higher temperatures cause the current to decrease and voltage transfer curve to shift left.

Uploaded by

Ayush Vatsal
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Experiment 4

Circuit used for experiment — Symmetric CMOS Inverter

Experiment 4 1
VTC and noise margin analysis

The values of VOH , VIH , VIL  and VOL are taken at the points where the slope,
∂Vout
∂Vin
= −1.

VOH VIH VIL VOL


1.858 1.014 0.698 0.148

NM H = VOH − VIH = 0.844V


NM L = VIL − VOL = 0.55V

Experiment 4 2
Red - 300n, Green - 450n, Purple - 600n, Teal - 750n, Pink - 900n, Grey - 1.05u

We can observe that since the curve is shifting right with almost unchanged
VOH and VOL , NM H (noise margin high) reduced while NM L (noise margin
low) increases.

Experiment 4 3
Rise Time and Fall Time

Rise time = 721ps

Fall time = 739ps

Experiment 4 4
Propagation delays

Width (nm) τphl   (ns) τplh  (ns) τp  (ns)


300 0.204 0.369 0.2865

600 0.108 0.278 0.193

900 0.082 0.247 0.1645

1200 0.0695 0.2365 0.153

From the above table we conclude that propagation delay decrease with
increase in width of MOSFETs.

Experiment 4 5
Power

Transient analysis — power drain of V-dd = -(power drawn by inverter)

Power dissipation(green) = PMPS power dissipation(teal) + NMOS power dissipation(pink)

Experiment 4 6
Red - 300n, Green - 450n, Purple - 600n, Teal - 750n, Pink - 900n, Grey - 1.05u

We can observe that both average and peak power increased when W is
increased.

Experiment 4 7
Red : -20 C, Green : 0 C, Purple : 20 C, Teal : 40 C, Pink : 60 C, Grey : 80 C

Red : -20 C, Green : 0 C, Purple : 20 C, Teal : 40 C, Pink : 60 C, Grey : 80 C

Effect of temperature — The current decreases and the VTC shifts left with
increase in temperatures as resistance of the MOSFETs rises.

Experiment 4 8

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