Forward Biasing and Reverse Biasing of P N Junction
Forward Biasing and Reverse Biasing of P N Junction
i
ed
A_junchien is formed (a plane betuun tuo types e
semictnduciets) in beroesn nype and p he
iv
Semicenductel
w
D
Contoc þoind
n bype semiconducte
ha
hy
ib
at
Semiconductal
Pr
tal
-
nction
n
juncth
i
ed
OnOn m side majouty change Caruu=e
iv
mineity change caub holes
w
On Aide
D
maicuhy change cauiw hales
mineuity change Cawuin=er
ha
and 2 D
ib
at
i
ed
stawds dueloping iv
So Caxiy p-type andl n-type sides weru elezbucally
w
neutral
Teulbyal by
by new Om-side Negatiue change densy
D
abpiin4
ib
i
ed
When TempeHaliv Incread
iv
w
meLe Covalint bond
D
ohe thurmally and
e-hole han MLha
ib
at
genlnaid".
Pr
FotwwrdBiasing Diode
When -side conhectedHo bosrhve
teeminal and h-51deSConnechd fo
Lnegalue pUMUnal of battvey, dede
be n Feúwandbia3ing
E
e e eep e+
e eh e elt
B-e Ve e e eee
e ehee
AAAA
hAeA W
UeVe eeesE
i
ed
ww
Vo
- e end iv
pushes etowwNdsunchon nd +ue end
w
ushes holes touoahds urction
D
I drtt Ts
Initially At cgulubsuiumdllusiondrtts
whee T is Jeuwrrse salinanon cuwLNt
i
ed
Censtwluted by minonty Cavu o ohich
Elechic Lueld savowrab/le
iv
C6/mal
w
u Lohen eward volHage is abblied
D
Bo Lne dluuion
Pr
ne e/k)
nerT Ce/k
7his egatuon s called ldeal diode 09uarhon
Beccuus2 eegheie many pracical cendihons
Dihs 9hadual change Fiald af hi edlge o
thedebpluen teoLoh and abbroximated he
Conctutuem
VI CHARACTERSTIGS 0F P-N D1ODE
VARIATION OF CURRENT WITH APPLIED VOLTAGE
I FORWARD CHA V. mb)
E
eVe
VeVg
4T eVe
4is 9ute smal!
AI
j low HALStance
is orud by jn
i
ed
wheh siuwdnd biased
Ve=VRnee
V=VV
iv Knee volHage
w
dhal etwad volHage abplied
D
Shacblu
ib
at
h n Small V abhliue,curentHeus
acmos Hhe Juncluem and change exponenhalg
Loifh Ve kI has unit
KI is known
Luhen V( easthimal
VaHage Cnongy
Volts
(24mlat)
>+ ERSo
Qo u Vp h 2 MLTJoul
lo4 mVolt Kela
We con 1gnee
)as Jouu
Coulomb
eVe/kT)
do TnoIe
Actually bractically duode weks coih the
eewand
Lward voltage ohe aange 7oo-Boo mlol
o cuworent inówases drasthically wrth ve
8mal nwtease n Ve
neeT e/kT)
net guuus elationC-charge qer
beluueen Vo Hage aphtud and Cwrat
louoing
louoing
i
ed
Keuueta salunaron CuuOnd 0-7 Vo is bareu
I S iv
Ugiy mall. botential ah an
w
Practucal obseuraton: auinag
had meams En
D
O ValH O Amb
O-05 Vot
Ennyy= 0:7eV
46 4A
ib
0- VoH 458 4 A
abhlud Juuld
at
pneg to chaxoe
03 Volf 025 Fmp
0 7 VolFE 4i xio Amp Caveeiersthat mia
majoutu CawiU
u l moT experunc any bbvuin Cund
Cal huge v e e n t
hou LA a Curulimit upto which docle oon
uA taunboe hat cuwwent cwrendlous
uncluen will be desthoygd
Width deplehon lauee
Ve-Ve
iv
w
VolHage acnoss depleioneguon--Ve
D
So oidth dobletio teguon deorease
ha
when diodle is foioasd biased o
tib
ra
P-N JUNCTION AT EQUIUiBRIUM: TWO TYPES OF
CURRENTS ACROSS THE Jn
h
t e e e
e
e +
A Ae
e
e
i
thxeughpuncluen j Callod duiuien Cuent
ed
majeity change cavie om n to
Cuvert looing du to lebus
iv uild etablished
w
ahe unetien J collud dilt ctenk
D
minetity Change COww om b ton)
ha
A0auillibyuuum
ib
unctien
BARRIER POTENTIAL ORBUILT IN POTENTIAL
In NAND
Jhis quanhty is knoLon as
thwmal potenral (VE)
AT100m tembeatue T300K
V 26 mV
Jhu bavrio botential ald
and Blecbuis file4
is confuned un the debehon Lem
ohly Ve
V1 aVa
V+Vto
P
i
ed
DIO DE 2
PN JUNCTION
iv alleuLs
vo tveminal deuice which and
w
DiedeSa
Cuwwent t lew when euwand biased
D
insed
ib
at
Pr
REVERSEBIASING
whun guilibraum is achioed acres b-n_junction
and
ovrilt cwwwt, due o dlilusion cwrrent du
majomajo Tity casii
mineaity.caulNS
i
ed
duuion
iv dut
w
e
e
D
AEoplDlamum
ha
ib
ee e When negathue
at
e
wuminal
Pr
e e
CohnucidT
b Lwuminal and
6OSThL Teunin
cull L5 cenhecdh
to 7-3de
Co ns deane
As a Aul hABeF ++eeee
e Ae attractd by
ome melL henf
hAhe +e toumina o
mobile Cull and holes o
chavge hheh bside aL atiacke
COvoens
by-ue uuminal
ww-
a e emoued
When disde is uuwse biased
biased
ER
|Ahhhl t+eeek
hhhhh t eeBe
ehhh t e
e ee e
hee
R
Vg+VRNetVoltage
w acrassjn
i
Negatiue toveminal atinacta halis db side
ed
iv
This pulls eD meiee puem n Side nea depletron
w
vugien and uuo moe holes nua debletuen Jegion
D
When apied o
Tajusion au
Bu motob side which1s alveady at
Lew borentral wther Jiducnd
toouwe botentidll in compausion
2 ide Ysevg Vek)elk
Energy Jieguved by n side elecrion
Lo Oos heunetionnvnases
fuethoe by amunt e Which wil edlue
auusion Culbvent fuehw but no eect on drilt
Cuwen, duu to minetity change cauLNS
Patemtial baLe olnease
width ofdeble ron eason inceease4 a
acrbss Junetion becomes +k
W- 2ev(,"No y-Vgk
As dusion curvrent u now naglgible
08 oHe cwvwen lowing a ross
unclien colld HOueise saliuHation
uworend omeo due to minesity Charge
i
COvoiwin 1ewue biuedjunction
IV-TCharacloustie
ed
iv
w
PN Junction orfens
D
ILSIStancc when
fo7wand blased
ib
4V
at
VBreakdo
V
Pr
Vknee
Kyevera nA
PN JUncton of feus
high vey high Hesuton
-ce when euee
biased
hon JuuoueVoltage abbied s nsed n
n a A diecion
mineutyer o sda gain emoughemungy
while CCessin the oid dobluln Jlgon
under he inlluence stong Jauese
Electuue Züld af thujuncton
Jhese a moving elecbols may kno@k
i
bom s
ed
covalent bonds and
thie frel ezwill fuwrthor de he sme
iv
w
Result i fuge owing anHOss
cwprotouing
D
the unctronwhich ma
ib desHoy h
ha
This bhenomchon is calledxea kdolon
at
unchon
Pr