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Forward Biasing and Reverse Biasing of P N Junction

A p-n junction is formed when a pure semiconductor is doped with an impurity to make it either n-type or p-type. When an n-type semiconductor is joined with a p-type semiconductor, a p-n junction is formed at the interface. Electrons diffuse from the n-side into the p-side and holes diffuse from the p-side to the n-side, leaving an area near the junction depleted of charge carriers called the depletion region. When a voltage is applied across the junction, current flows easily in the forward direction but is blocked in the reverse direction.

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0% found this document useful (0 votes)
70 views15 pages

Forward Biasing and Reverse Biasing of P N Junction

A p-n junction is formed when a pure semiconductor is doped with an impurity to make it either n-type or p-type. When an n-type semiconductor is joined with a p-type semiconductor, a p-n junction is formed at the interface. Electrons diffuse from the n-side into the p-side and holes diffuse from the p-side to the n-side, leaving an area near the junction depleted of charge carriers called the depletion region. When a voltage is applied across the junction, current flows easily in the forward direction but is blocked in the reverse direction.

Uploaded by

Ayush
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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PNJUNCTION

what s b-n junctfoN


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i s doped with penavalent umpwily so hat
whole matuual hecemes n-type sehiconductet
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amu puc in larg cencentration such that
up to some olerth matuual becemis p-type
Semiconductes

i
ed
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at

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e CTOSsin9 junclion
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juncten leouingq behind immobileposrtive
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S on both sids junction layer
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DEPLETION REGION VVgmp

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ohe thurmally and
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ib
at
genlnaid".
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ha

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at

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Pr

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dillerance a VS abladaceea Hhe
dahlelien egioh and an elecbuc üld E
establishod hiu fald 2 puouidayel
&wegy o e dgainah the potenhal baeiusnosyyel
uliount e helps n side eo oross he
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also stardslewng awcess the junctionem

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whee T is Jeuwrrse salinanon cuwLNt

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dulfusion Lnwnec Cxponnially T-T.eHkD


ha

whileT iltemauns unehanged


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at

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7his egatuon s called ldeal diode 09uarhon
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thedebpluen teoLoh and abbroximated he
Conctutuem
VI CHARACTERSTIGS 0F P-N D1ODE
VARIATION OF CURRENT WITH APPLIED VOLTAGE
I FORWARD CHA V. mb)
E
eVe
VeVg
4T eVe
4is 9ute smal!
AI
j low HALStance
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V=VV

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w
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ha

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at

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Pr

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acmos Hhe Juncluem and change exponenhalg
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VaHage Cnongy
Volts

(24mlat)
>+ ERSo
Qo u Vp h 2 MLTJoul
lo4 mVolt Kela

We con 1gnee
)as Jouu
Coulomb
eVe/kT)
do TnoIe
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eewand
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o cuworent inówases drasthically wrth ve
8mal nwtease n Ve
neeT e/kT)
net guuus elationC-charge qer
beluueen Vo Hage aphtud and Cwrat
louoing
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w
Practucal obseuraton: auinag
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ha

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ib

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abhlud Juuld
at

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Pr

pneg to chaxoe
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0 7 VolFE 4i xio Amp Caveeiersthat mia
majoutu CawiU
u l moT experunc any bbvuin Cund
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hou LA a Curulimit upto which docle oon
uA taunboe hat cuwwent cwrendlous
uncluen will be desthoygd
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Ve-Ve

width26 VA potehal developed


aooss depletron vegion
e
whun ewand votageis apledectue

iv
w
VolHage acnoss depleioneguon--Ve

D
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ha
when diodle is foioasd biased o

tib
ra
P-N JUNCTION AT EQUIUiBRIUM: TWO TYPES OF
CURRENTS ACROSS THE Jn
h
t e e e
e
e +
A Ae
e
e

Due te Cemcenttaliem ghadunt CUOunteoing

i
thxeughpuncluen j Callod duiuien Cuent

ed
majeity change cavie om n to
Cuvert looing du to lebus
iv uild etablished
w
ahe unetien J collud dilt ctenk
D
minetity Change COww om b ton)
ha

A0auillibyuuum
ib

diuaion Cuwent dt cwvunt


at

And no n wwwnt s owing th7ough


Pr

unctien
BARRIER POTENTIAL ORBUILT IN POTENTIAL

In NAND
Jhis quanhty is knoLon as
thwmal potenral (VE)
AT100m tembeatue T300K
V 26 mV
Jhu bavrio botential ald
and Blecbuis file4
is confuned un the debehon Lem

ohly Ve
V1 aVa
V+Vto
P

i
ed
DIO DE 2
PN JUNCTION
iv alleuLs
vo tveminal deuice which and
w
DiedeSa
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D

des not_alleo cuWOntta leu ohen Jevers


ha

insed
ib
at
Pr

FeRwand biased Reusebiased

electenue duia s method e


Biasingo
Connebting diode n a cicuit
Advantagu 08emicenduchet eU COndluchot is thet
ComdudlurltyoAunicendulet PNndien can be
C&mholled by abblyin extexnal potential dioene
Fetuwand biaked voltage e suusse biaan.d yoltag

REVERSEBIASING
whun guilibraum is achioed acres b-n_junction
and
ovrilt cwwwt, due o dlilusion cwrrent du
majomajo Tity casii
mineaity.caulNS

i
ed
duuion
iv dut
w
e
e
D

AEoplDlamum
ha
ib

ee e When negathue
at

e
wuminal
Pr

e e
CohnucidT
b Lwuminal and
6OSThL Teunin
cull L5 cenhecdh
to 7-3de
Co ns deane
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e Ae attractd by
ome melL henf
hAhe +e toumina o
mobile Cull and holes o
chavge hheh bside aL atiacke
COvoens
by-ue uuminal
ww-
a e emoued
When disde is uuwse biased
biased
ER

|Ahhhl t+eeek
hhhhh t eeBe
ehhh t e
e ee e

hee

R
Vg+VRNetVoltage
w acrassjn

Positive fenminal atracts et of n side

i
Negatiue toveminal atinacta halis db side

ed
iv
This pulls eD meiee puem n Side nea depletron
w
vugien and uuo moe holes nua debletuen Jegion
D

TBwaHds -Ue tuminal e batty


ha

As a kUult width ddepletion


Jugien nowases telausefeo mee
ib

mobile charge uCOWLiLs Mouis away


at

Lem depenon Jugion


Pr

When apied o
Tajusion au
Bu motob side which1s alveady at
Lew borentral wther Jiducnd
toouwe botentidll in compausion
2 ide Ysevg Vek)elk
Energy Jieguved by n side elecrion
Lo Oos heunetionnvnases
fuethoe by amunt e Which wil edlue
auusion Culbvent fuehw but no eect on drilt
Cuwen, duu to minetity change cauLNS
Patemtial baLe olnease
width ofdeble ron eason inceease4 a
acrbss Junetion becomes +k
W- 2ev(,"No y-Vgk
As dusion curvrent u now naglgible
08 oHe cwvwen lowing a ross
unclien colld HOueise saliuHation
uworend omeo due to minesity Charge

i
COvoiwin 1ewue biuedjunction
IV-TCharacloustie
ed
iv
w
PN Junction orfens
D

almasi ntgligible Iin mA


ha

ILSIStancc when
fo7wand blased
ib

4V
at

VBreakdo
V
Pr

Vknee
Kyevera nA
PN JUncton of feus
high vey high Hesuton
-ce when euee
biased
hon JuuoueVoltage abbied s nsed n
n a A diecion
mineutyer o sda gain emoughemungy
while CCessin the oid dobluln Jlgon
under he inlluence stong Jauese
Electuue Züld af thujuncton
Jhese a moving elecbols may kno@k

i
bom s

ed
covalent bonds and
thie frel ezwill fuwrthor de he sme

iv
w
Result i fuge owing anHOss
cwprotouing

D
the unctronwhich ma
ib desHoy h
ha
This bhenomchon is calledxea kdolon
at

unchon
Pr

Jhat uuwnse oltage ad which junclon brenks


ound
Ond
ThHeugh 0heunchon S
looing
hugeHuwUL CwRUN Stad looing
CaledVReuo e
Bakdowh VoHage

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