3/16/22, 10:47 PM Using Cadence Virtuoso IC617 to simulate VI characteristic curve - Programmer Sought

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Simulation of VI characteristic curve with Cadence Virtu

oso IC617
A piece of chicken slag Posted at 2021-07-22 14:53:13 6336
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foreword
This article is my own study notes. It is the second article in the Cadence Virtuoso series, and it is also an article
in the introductory series. The software version used is Cadence Virtuoso IC617. For other articles, please click
above to see the content of the Cadence Virtuoso column I produced.

The previous article recorded how to start and create a new project for the Cadence Virtuoso IC617 (click the
link below to view). This article will describe how to use the MOS schematic created in the previous article to
simulate its VI characteristic curve, and also for the future. circuit design and simulation.

Start-up and new construction of the Cadence Virtuoso IC617

Schematic
In the last article, I drew a schematic diagram of a MOS device, but the data in it are all quantitative. To change
it into a variable, the simulation and parameter sweep can be performed.

Click the device and press the Q key to modify the device parameters. Here, the parameters of the two voltage
sources are modified to vgs and vds respectively, corresponding to the two inputs of the MOS device.

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The modified schematic is as shown below.

Setting up a single-variable simulation

Set Simulation Variables
Select Launch in the menu and select the first item ADE L.

Select Copy From Cellview in the pop-up window, and you can import all the variables in the schematic
(recommended operation, because since the schematic is designed as a variable, it is used for simulation).

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If you choose Edit, you are adding variables manually (not recommended, you need to add them one by one).

At the same time, set the initial value of the variable, and the first curve drawn is under vgs=1.5V, look at the
characteristic curve under different vds voltage, so set the initial value. Set vgs to 1.5 (this is quantitative) and
vds to 0 (this is a variable, 0 is the initial value).

Set up simulation analysis

Set scan type

Set the scan type. Select the icon on the right in the AED L window.

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The pop-up window is divided into upper and lower parts.

Do the above part first. Here we are a DC simulation, so select dc, and then select Save DC Operating Point,
that is, save the DC operating point, and the curve will be generated and drawn later.

select variable
The following part will become the variable value that needs to be scanned. Two methods are recommended
here.

method one

This method is suitable for knowing the specific variables and when the variable names are intuitive and
easy to understand.

Directly set the variable to be scanned, select Design Variable, you can directly enter the variable name (must
exist, otherwise an error will be reported), or click Select Design Variable, and select the currently existing

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variable in the pop-up window to avoid errors.

Method Two

This method is suitable for when the schematic diagram is large, the specific variables and locations are
unknown, and the variable names are V1, V2, etc. which are not easy to understand.

Direct selection of device parameters. Select Component Parameter, in the right part of the window, Component
Name represents the name of the device, and Parameter represents a parameter in the selected device.

It is recommended to click Select Component directly, and then click the device to be scanned in the schematic.

In the pop-up window, select the vdc parameter in this device as the simulation sweep variable, that is, the vds
mentioned above, and click OK to confirm.

Scan range
In the bottom part of the window, you can set the scan range, here the range of vds is set to 0-3, click OK to
confirm.

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Eventually, the setup prompt will be displayed in the window.

Set simulation output

Click the icon on the right to set the simulation output.

In the pop-up window, it is not recommended to enter the node name directly, it is more recommended to
directly click From Design.

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After clicking From Design, click the node marked by the purple arrow in the figure below, which represents the
output current of this MOS node (and if you select a connection, it represents the voltage on this connection).

At this point, the node is automatically drawn with a circle, representing selection.

Back to the original window, it can be seen that the output node is the D pole of MOS0, click OK to confirm the
modification.

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Eventually, the setup prompt will be displayed in the window.

final simulation result

After the above three steps, it can be concluded that there are data in the three sub-windows in the emulator.

Click the start icon on the right to get the simulation results.

A simulation curve is obtained. That is, when vgs=1.5V, vds changes from 0 to 3V, and the output current
changes.

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Other curves can be obtained by manually changing the value of vgs. For example, I changed it to 0.5V.

Set up sweep variable simulation

In the section above, the simulation under a single variable vds was presented, where vgs was fixed at 1.5V. If
we want to see the VI characteristic curve under different vgs, then we need to set a sweep variable.

Simulation settings
Select Parametric Analysis in Tools.

In the pop-up window, follow the settings below. A piece of chicken… focus on twenty one 11 77 Column Directory

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Variable: Double-click, select the variable name, select vgs here

Value: value, default

Range Type: The way the variable is changed. From A to B can be selected, center point and left and right
offset can be selected

Step Mode: Set how the step size changes, here select the linear step size

According to the figure below, the variable set here is vgs, which changes from 0 to 3V, and every 0.5 steps, it
has the following values:

1 [0, 0.5, 1, 1.5, 2, 2.5, 3]

Simulation results
Click Run.

You can get a total of seven curves.

Simulate P-MOS
The principle of simulating P-MOS is basically the same as that of N-MOS, but there are several points that
need to be modified and paid attention to.

Schematic
Since P-MOS is a negative voltage turn-on device, the schematic diagram needs to be modified accordingly.
That is, vgs becomes a negative voltage, which is changed to vsg, and vds becomes vsd. At the same time, the

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B pole is connected to VDD.

Simulation settings
The simulation settings are the same as before. Since the DC source is already connected to the negative pole,
when setting the simulation variable, it can be set to positive.

Simulation results

Single Variable Simulation Results

Set vsg=1.5V, scan vsd to get the following results (i.e. -1.5V is applied to the G pole, and 0 to -3V is applied to
the S pole).

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Swept Variable Simulation Results

Like the previous N-MOS settings, the variable set is vsg, which changes from 0 to 3V, every 0.5 steps.

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content

foreword

Schematic focus on
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Setting up a single-variable simulation

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Setting up a single variable simulation

Set Simulation Variables

Set up simulation analysis

Set scan type

select variable

Scan range

Set simulation output

final simulation result

Set up sweep variable simulation

Simulation settings

Simulation results

Simulate P-MOS

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