INFRARED DETECTOR

MCT photovoltaic detector

P9697 series
Photovoltaic detector with high-speed response and low noise

Features Applications
l Excellent output linearity l FTIR
l High-speed response l Thermal camera
l Radiation thermometer
l Infrared spectrophotometer
l Environmental measurement
l Astronomy and space observation
■ General ratings
Parameter P9697-01 P9697-02 Unit
Window material ZnS -
Package Metal dewar -
Cooling type Liquid nitrogen -
Active area φ0.5 φ1 mm

■ Absolute maximum ratings

Parameter Symbol Value Unit
Reverse voltage VR 0.5 V
Operating temperature Topr -40 to +60 °C
Storage temperature Tstg -55 to +60 °C

■ Electrical and optical characteristics (T= -196 °C)

P9697-01 P9697-02
Parameter Symbol Condition Unit
Min. Typ. Max. Min. Typ. Max.
Peak sensitivity wavelength λp - 11 - - 11 - µm
Cut-off wavelength λc - 13 - - 13 - µm
Photo sensitivity S - 3 - - 3 - A/W
Shunt resistance Rsh - 500 - - 200 - Ω
(500 K, 1200, 1) 7.5 × 10 9 1.5 × 10 1 0 - 7.5 × 10 9 1.5 × 10 1 0 -
Detectivity D* cm·Hz1/2/W
(λp, 1200, 1) 1.5 × 10 1 0 3.0 × 10 1 0 - 1.5 × 10 1 0 3.0 × 10 1 0 -
Noise Equivalent Power NEP λ=λp - -1 2
1.5 × 10 3.0 × 10 -1 2 - 3.0 × 10 -1 2 5.9 × 10 -1 2 W/Hz1/2
Rise time tr - 150 - - 200 - ns

■ Measurement circuit

DETECTOR
CHOPPER
1200 Hz
BAND-PASS rms
FILTER METER

BLACK BODY: 500 K fo=1200 Hz

∆f=120 Hz
INCIDENT ENERGY: 2.64 µW/cm2

KIRDC0071EA

1
 PbSe photovoltaic detector P9697 series

■ Spectral response
11 (Typ. T= -196 ˚C)
10

10
D* (cm · Hz1/2/W)

10

109

108
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

WAVELENGTH (µm)
KIRDB0334EA

■ Dimensional outline (unit: mm)

LN2 FILL PORT 12.5

30˚
51 ± 1

63.5 ± 1
PUMP-OUT PIPE
44.5 ± 1 46 ± 1
9.5 28.5
6.5

SMA
11 ± 1 CONNECTOR
96 ± 1
26 ± 1

PHOTOSENSITIVE
SURFACE
172 ± 1
37 ± 1

10 ± 1

9.5 ± 0.5 66.8 ± 1

MCT (ANODE: CORE,

CATHODE: OUTER)
DEWAR GND PIN
NC

KIRDA0182ED

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KIRD1074E05
Jul. 2007 DN
2