Ordering number : ENA0543 2SA2204

SANYO Semiconductors
DATA SHEET

2SA2204 PNP Epitaxial Planar Silicon Transistor

High-Voltage Switching Applications

Applications
• DC / DC converter, Relay drivers, lamp drivers, motor drivers.

Features
• Adoption of FBET, MBIT processes.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --80 V
Collector-to-Emitter Voltage VCES --80 V
Collector-to-Emitter Voltage VCEO --80 V
Emitter-to-Base Voltage VEBO --7 V
Collector Current IC --2.5 A
Collector Current (Pulse) ICP --4 A
Base Current IB --500 mA
0.8 W
Collector Dissipation PC
Tc=25°C 15 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=--70V, IE=0A --1 µA
Emitter Cutoff Current IEBO VEB=--4V, IC=0A --1 µA
DC Current Gain hFE VCE=--5V, IC=--100mA 200 400
Gain-Bandwidth Product fT VCE=--10V, IC=--500mA 350 MHz
Output Capacitance Cob VCB=--10V, f=1MHz 23 pF
Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
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nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N0806EA SY IM TC-00000307 No. A0543-1/4

 2SA2204
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--1A, IB=--100mA --100 --200 mV
Base-to-Emitterr Saturation Voltage VBE(sat) IC=--1A, IB=--100mA --0.85 --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=--10µA, IE=0A --80 V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=--100µA, RBE=0Ω --80 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE=∞ --80 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--10µA, IC=0A --7 V
Turn-On Time ton See specified Test Circuit. 40 ns
Storage Time tstg See specified Test Circuit. 500 ns
Fall Time tf See specified Test Circuit. 28 ns

Package Dimensions Package Dimensions

unit : mm (typ) unit : mm (typ)
7518-003 7003-003

6.5 2.3 6.5 2.3

5.0 0.5 5.0 0.5
1.5

1.5
4 4
7.0

7.0
5.5

5.5

1.2
0.85 0.85 0.5
0.7

2.5
1.2
0.8
0.8
1.6

1 2 3
7.5

0.6 0.5 0.6 0 to 0.2

1 : Base 1 : Base
1.2
2 : Collector 2 : Collector
1 2 3
3 : Emitter 3 : Emitter
4 : Collector 4 : Collector
2.3 2.3

2.3 2.3 SANYO : TP SANYO : TP-FA

Switching Time Test Circuit

IB1
PW=20µs
OUTPUT
D.C.≤1% IB2

INPUT 1kΩ
VR RL
50Ω
+ +

220µF 470µF

VBE=5V VCC= --40V

IC= --10IB1=10IB2= --0.5A

No. A0543-2/4
 2SA2204
IC -- VCE IC -- VBE
--2.0 --2.5
mA VCE= --5V

A
0 --80mA
--12

0mA --180m
--1.8 A
--100m
--1.6 --60mA --2.0

Collector Current, IC -- A
Collector Current, IC -- A

mA
--1.4 -- 140 --40mA
--20
--1.2
0 mA --1.5
--16 --20mA
--1.0

--0.8 --1.0

--0.6
--5mA

5°C

--25°C
25°C
Ta=7
--0.4 --0.5

--0.2
IB=0mA
0 0
0 --0.05 --0.10 --0.15 --0.20 --0.25 --0.30 --0.35 --0.40 --0.45 --0.50 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Collector-to-Emitter Voltage, VCE -- V IT11654 Base-to-Emitter Voltage, VBE -- V IT11655
hFE -- IC fT -- IC
1000 7
VCE= --5V VCE= --10V
5

Gain-Bandwidth Product, fT -- MHz

7

3
DC Current Gain, hFE

5
Ta=75°C
2

25°C
3

100
--25°C
2
7

100 3
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5
Collector Current, IC -- A IT11656 Collector Current, IC -- A IT11657
Cob -- VCB VCE(sat) -- IC
100 5
f=1MHz IC / IB=10
3
Saturation Voltage, VCE(sat) -- V

7
Output Capacitance, Cob -- pF

5
--0.1
Collector-to-Emitter

7
3 5

3
2 7 5°C
2 Ta= °C
--25

--0.01 2 5°C
10 7
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5
Collector-to-Base Voltage, VCB -- V IT11658 Collector Current, IC -- A IT11659
VBE(sat) -- IC ASO
2 7
IC / IB=10 5 ICP= --4A <10µs
3 IC= --2.5A 1m
100
Saturation Voltage, VBE(sat) -- V

2
s
10
µs

0m
Collector Current, IC -- A

--1.0 --1.0 s
10
Ta= --25°C 7 m
s
500

5
7
µs

3
DC

75°C
Base-to-Emitter

2
o
per

5
25°C
atio

--0.1
7
n

5
3 3
2 Tc=25°C
Single pulse
2 --0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100
Collector Current, IC -- A IT11660 Collector-to-Emitter Voltage, VCE -- V IT11661

No. A0543-3/4
 2SA2204
ASO PC -- Ta
7 0.9
5 ICP= --4A <10µs
3 IC= --2.5A 0.8

100
10

Collector Dissipation, PC -- W
2

µs
0m 1m 0.7
Collector Current, IC -- A

s s
--1.0
7 0.6
10
m

500
5
DC s 0.5

µs
3 op
er
2 ati 0.4
on
--0.1 0.3
7
5
0.2
3
2 Ta=25°C 0.1
Single pulse
--0.01 0
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT11662 Ambient Temperature, Ta -- °C IT11652
PC -- Tc
17.5

15.0
Collector Dissipation, PC -- W

12.5

10.0

7.5

5.0

2.5

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C IT11653

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This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.

PS No. A0543-4/4