PD-94640

IRAMS10UP60A
Plug N DriveTM Integrated Power
Series
Module for Appliance Motor Drive
Description
International Rectifier's IRAMS10UP60A is an Integrated Power Module developed and optimized for elec-
tronic motor control in appliance applications such as washing machines and refrigerators. Plug N Drive
technology offers an extremely compact, high performance AC motor-driver in a single isolated package for
a very simple design.
A built-in temperature monitor and over-temperature/over-current protection, along with the short-circuit
rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe
operation.
The integration of the bootstrap diodes for the high-side driver section, and the single polarity power
supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost
reduction advantages.

Features
• Integrated Gate Drivers and Bootstrap Diodes.
• Temperature Monitor
• Temperature and Overcurrent shutdown
• Fully Isolated Package.
• Low VCE (on) Non Punch Through IGBT Technology.
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• Low side IGBT emitter pins for current conrol
• Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power range 0.4~0.75kW / 85~253 Vac

Absolute Maximum Ratings

Parameter Description Max. Value Units
VCES Maximum IGBT Blocking Voltage 600 V
Io @ T C - 25 o C RMS Phase Current 10
o
Io @TC - 100 C RMS Phase Current 5 A
Ipk Maximum Peak Phase Current (tp<100ms) 15
Fp Maximum PWM Carrier Frequency 20 kHz
Pd Maximum Power dissipation per Phase 20 W
Viso Isolation Voltage (1min) 2000 VRMS
TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150
°C
TJ (Driver IC) Operating Junction temperature Range -40 to +150
T Mounting torque Range (M3 screw) 0.8 to 1.0 Nm

www.irf.com 1
2/24/03
IRAMS10UP60A
Internal Electrical Schematic - IRAMS10UP60A
V+ (10)

VRU (12)

VRV (13)

VRW (14)

Rg1 Rg3 Rg5

VB1 (7)
U, VS1 (8)

VB2 (4)
V, VS2 (5)
VB3 (1)
W, VS3 (2)

22 21 20 19 18 17 Rg2
23 VS1 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16
24 HO1 Rg4
R3 LO2 15
25 VB1
1 VCC Rg6
Driver IC LO3 14
HIN1 (15) 2 HIN1
HIN2 (16) 3 HIN2
HIN3 (17) 4 HIN3
LIN2 LIN3 F ITRIP EN RCIN VSS COM
LIN1 (18) 5 LIN1 6 7 8 9 10 11 12 13

LIN2 (19)
LIN3 (20) R1
T/Itrip (21)
RT THERMISTOR
R2
C
VDD (22)

VSS (23)

2 www.irf.com
 IRAMS10UP60A
Inverter Section Electrical Characteristics @ TJ = 25°C
Symbol Param e t e r Min Typ Max Units Conditions
Collector-to-Emitter
V(BR)CES 600 --- --- V VIN =0V, IC=20 µ A
Breakdown Voltage
Temperature Coeff. Of VIN =0V, IC=1.0 m A
∆ V(BR)CES / ∆ T --- 0.57 --- V/°C
Breakdown Voltage (25°C - 150°C)
Collector-to-Emitter Saturation --- 1. 7 2.0 IC=5A TJ =25°C, VDD =15V
VCE(ON) V
Voltage --- 2. 0 2.4 IC=5A TJ =150°C
Zero Gate Voltage Collector --- 5 15 VIN =5V, V + =600V
ICES µA
Current --- 10 40 VIN =5V, V + =600V, T J=150°C
--- 1. 8 2.35 IC=5A
VF M Diode Forward Voltage Drop V
--- 1. 3 1.7 IC=5A, TJ=150°C

Inverter Section Switching Characteristics @ TJ = 25°C

Symbol Parameter Min Typ Max Units Conditions
Eon Turn-On Switching Loss --- 155 180 IC=5A, V+ =400V
Eoff Turn-Off Switching Loss --- 70 90 µJ VDD =15V, R G =33Ω, L=2mH
Etot Total Switching Loss --- 225 270 TJ=25°C
See CT1
Eon Turn-on Swtiching Loss --- 260 300 TJ=150°C
Eoff Turn-off Switching Loss --- 130 160 µJ Energy losses include "tail" and
Etot Total Switching Loss --- 390 460 diode reverse recovery
Diode Reverse Recovery
Erec --- 30 40 µJ TJ=150°C, V+ =400V VDD =15V,
energy
IF =5A, L=2mH, R G =33Ω
t rr Diode Reverse Recovery time --- 95 110 ns
TJ=150°C, IC=5A, VP =600V
Reverse Bias Safe Operating
RBSOA FULL SQUARE V+=480V, V DD =+15V to 0V
Area
R G =33Ω See CT3

TJ=150°C, VP =600V,
Short Circuit Safe Operating
SCSOA 10 --- --- µs R G =33Ω, V +=360V,
Area
VDD =+15V to 0V See CT2

Thermal Resistance
Symbol Param e t e r M in Typ Max Units Conditions
Junction to case thermal
R th(J-C) resistance, each IGBT under --- 4. 2 4.7 °C/W
inv e rter operation.
Flat, greased surface.
Junction to case thermal Heatsink compound thermal
R th(J-C) resistance, each Diode under --- 5. 5 6.5 °C/W conductiv ity - 1W/mK
inv e rter operation.
Thermal Resistance case to
R th(C-S) --- 0. 1 --- °C/W
sink

www.irf.com 3
IRAMS10UP60A
Absolute Maximum Ratings Driver function
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to VSS. (Note 1) 14
Symbol Definition Min Max Units
+
V High Side offset voltage -0.3 600 V

VB1,2,3 High Side floating supply voltage -0.3 20 V

VDD Low Side and logic fixed supply voltage -0.3 20 V

VIN Input voltage LIN, HIN, T/I TRI P -0.3 7 V

TJ Juction Temperature -40 150 °C

Recommended Operating Conditions Driver Function

The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to VSS . The VS offset rating is tested with all supplies biased
at 15V differential. (Note 1)
Sym bol De finition M in M ax Units
VB1,2,3 High side floating supply voltage VS +12 VS +20
V
VS1,2,3 High side floating supply offset voltage Note 2 450

VD D Low side and logic fixed supply voltage 12 20

V
VITRIP T/I TRI P input voltage VSS VSS +5

VIN Logic input voltage LIN, HIN VSS VSS +5 V

Static Electrical Characteristics Driver Function

VBIAS (VCC, VBS1,2,3) = 15V unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are
applicable to all six channels. (Note 1)

Sym bol De finition M in Typ M ax Units

VIN,th+ Positive going input threshold --- --- 3 V
VIN,th- Negative going input threshold 0.8 --- --- V
VCCUV+ VCC and VBS supply undervoltage
10.6 11.1 11.6 V
VBSUV+ Positive going threshold

VCCUV- VCC and VBS supply undervoltage

10.4 10.9 11.4 V
VBSUV- Negative going threshold
VCCUVH VCC and VBS supply undervoltage
--- 0. 2 --- V
VBSUVH Ilockout hysteresis
IQBS Quiescent VBS supply current --- 70 120 µA
IQCC Quiscent V CC supply current --- 1. 6 2.3 µA
ILK Offset Supply Leakage Current --- --- 50 µA
II N + Input bias current (OUT=HI or OUT=LO) --- 120 --- µA
V(T/ITRIP) T/ITRIP threshold Voltage (OUT=HI or OUT=LO) (Note 3) 3.85 4. 3 4.75 V

4 www.irf.com
 IRAMS10UP60A
Dynamic Electrical Characteristics
VDD = VBS = VBIAS = 15V, Io= 1A, VD=9V , PWMin= 2kHz, VINON = VIN,th+, VINOFF = VIN,th-
TA = 25°C unless otherwise specified.
Symbol Definition M in Typ Max Units
TON Input to output propagation turn-on delay time (see fig.11) - 470 - ns

TOFF Input to output propagation turn-off delay time (see fig. 11) - 615 - ns

DT Dead Time - 300 - ns

I/TTrip T/I Trip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns

TFCLTRL Post ITrip to six switch to turn-off clear time (see fig. 2) - 9 - ms

Internal NTC - Thermistor Characteristics

Parameter Typ Units Conditions
R25 Resistance 100 +/- 5% kΩ TC = 25°C
R125 Resistance 2.522 + 17.3 % /- 14.9% kΩ TC = 125°C
[B(1/T2 - 1/T1)]
R25/50 Resistance 4250 +/- 3% kΩ R 2 = R 1e

Temperature Range -40 / 125 °C

Typ. Dissipation constant 1 mW/°C TC = 25°C

Note 1: For more details, see IR21365 data sheet

Note 2: Logic operational for Vs from COM-5V to COM+600V. Logic stata held for Vs from COM-5V to
COM-VBS. (please refer to DT97-3 for more details)

Thermistor Built-in IRAMS10UP60A

VCC (22)

NTC

IR21365

12K
T/ITRIP (21)

4.3K
VSS (23)

Note 3: The Maximum recommended sense voltage at the T/ITRIP terminal under normal operating
conditions is 3.3V.

www.irf.com 5
IRAMS10UP60A
Figure1. Input/Output Timing Diagram

HIN1,2,3

LIN1,2,3

HO1,2,3

LO1,2,3

T/Itrip

U,V,W

Note 4: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.

Vbus

Itrip HIN1,2,3 LIN1,2,3 U,V,W

0 0 1 Vbus
0 1 0 0
Ho
Hin1,2,3 0 1 1 X
(15,16,17) 1 X X X
U,V,W
IC
Driver (8,5,2)
Lin1,2,3
(18,19,20) Lo

6 www.irf.com
 IRAMS10UP60A
Figure 2. T/ITrip Timing Waveform

HIN1,2,3

LIN1,2,3

50%
T/Itrip

U,V,W 50%

tfltclr

Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-
bridge output voltage would be determined by the direction of current flow in the load.

www.irf.com 7
IRAMS10UP60A
Module Pin-Out Description
P in Na m e D e s c r ip t io n
1 VB3 H i g h S i d e F l o a t i n g S u p p ly V o lta g e 3
2 W ,VS 3 O u t p u t 3 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e
3 na none
4 VB2 H i g h S i d e F l o a t i n g S u p p ly vo lta g e 2
5 V,VS2 O u t p u t 2 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e
6 na none
7 VB1 H i g h S i d e F l o a t i n g S u p p ly vo lta g e 1
8 U,V S 1 O u t p u t 1 - H i g h S i d e F l o a t i n g S u p p ly O ffs e t V o l t a g e
9 na none
10 V+ P o s itive B u s Input V o lta g e
11 na none
12 LE1 L o w S i d e E m itte r C o n n e c tio n - P h a s e 1
13 LE2 L o w S i d e E m itte r C o n n e c tio n - P h a s e 2
14 LE3 L o w S i d e E m itte r C o n n e c tio n - P h a s e 3
15 H IN1 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 1
16 H IN2 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 2
17 H IN3 L o g ic Input High S i d e G a t e D r i v e r - P h a s e 3
18 LIN 1 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 1
19 LIN 2 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 2
20 LIN 3 L o g ic Input Low S i d e G a t e D r i v e r - P h a s e 3
21 T / Itr ip T e m p e r a t u r e M o n ito r a n d S h u t - d o w n P in
22 VCC + 1 5 V M a in S u p p ly
23 VSS N e g a tive M a in S u p p ly

8 www.irf.com
 IRAMS10UP60A
Typical Application Connection IRAMS10UP60A

VBW

VSW
U
BOOT-STRAP
CAPACITORS VBV
3-ph AC V
MOTOR VSV

CURRENT SENSING CAN USE A W VBU

SINGLE SENSE RESISTOR OR PHASE
LEG SENSING AS SHOWN VSU

V+
DC BUS
CAPACITORS
LeU

PHASE LEG LeV

CURRENT
LeW
SENSE
HINU

HINV

HINW Driver IC
CONTROLLER LINU

LINV

LINW

T/ITRIP
5k
TEMP
4.3K VDD(15 V)
SENSE 1m
3.3 V VSS
8.2k NTC
10m 0.1 12k
m

O/C
SENSE
(ACTIVE LOW)

1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to re-
duce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the
module pins will further improve performance.
2. In order to provide good decoupling between Vcc-Gnd and Vb-Vs terminals, the capacitors shown
connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1mF, are strongly recommended.
3. Low inductance shunt resistors should be used for phase leg current sensing. Similarly, the length of
the traces between pins 12, 13 and 14 to the corresponding shunt resistors should be kept as small as
possible.
4. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR design tip DN 98-2a or application note AN-1044.
5. Over-current sense signal can be obtained from external hardware detecting excessive instantaneous
current in inverter.

www.irf.com 9
IRAMS10UP60A
VBUS = 400 V, TJ=TJ Max °C, Modulation Depth = 0.8, PF = 0.6
10
MAX RMS OUTPUT CURRENT / PHASE (A)

9
Tc = 100 °C
8 Tc = 110 °C
Tc = 120 °C
7

0
0 2 4 6 8 10 12 14 16 18 20
PWM SWITCHING FREQUENCY (kHz)
Figure 3. Maximum sinusoidal phase current as function of switching frequency
VBUS=400V, Tj=150°C, Modulation Depth=0.8, PF=0.6

7
Switching Frequency :
12KHz
6
16KHz
20KHz
Maximum RMS Phase Current (A)

0
1 10 100
Motor Current Modulation Frequency (Hz)
Figure 4. Maximum sinusoidal phase current as function of modulation frequency
VBUS=400V, Tj=150°C, Tc=100°C, Modulation Depth=0.8, PF=0.6

10 www.irf.com
 IRAMS10UP60A
TURN-ON AT Tj = 125 °C, Rg = 33 OHM, 310 V
16 350

14 300

12
250
CURRENT
10
CURRENT (A)

VOLTAGE
200

VOLTAGE (V)
8
150
6
100
4

50
2

0 0

-2 -50
0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4
TIME (µs)
Figure 5. IGBT Turn-on. Typical turn-on waveform @Tj=125°C, VBUS=310V

TURN-OFF AT Tj = 125 °C, Rg = 33 OHM, 310 V

6 360

5 300

4 CURRENT 240
VOLTAGE
CURRENT (A)

VOLTAGE (V)

3 180

2 120

1 60

0 0

-1 -60
0 0.2 0.4 0.6 0.8 1
TIME (µs)

Figure 6. IGBT Turn-off. Typical turn-off waveform @Tj=125°C, VBUS=310V

www.irf.com 11
IRAMS10UP60A
120

100
THERMISTOR RESISTANCE (kΩ)

MINIMUM
NOMINAL
80 MAXIMUM

60

40

20

0
0 20 40 60 80 100 120 140
TEMPERATURE (°C)
Figure 7. Variation of thermistor resistance with temperature

3.5

3
NOMINAL
2.5 MINIMUM
V SENSE (V)

MAXIMUM

1.5

0.5

0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
TEMPERATURE (°C)

Figure 8. Variation of temperature sense voltage with thermistor tempera-

ture using external bias resistance of 4.3KΩ, Vcc=15V

12 www.irf.com
 IRAMS10UP60A
200

180
IGBT JUNCTION TEMPERATURE (°C)

160

140

120

100

80

60

40
80 90 100 110 120 130 140 150 160 170
THERMISTOR TEMPERATURE (°C)
Figure 9. Estimated maximum IGBT junction temperature with thermistor
temperature
RECOMMENDED MINIMUM VALUE OF BOOTSTRAP CAPACITOR VERSUS
SWITCHING FREQUENCY, VCC = 15 V
14

12

10
CAPACITANCE ( µ F)

0
0 5 10 15 20 25
SWITCHING FREQUENCY (kHz)

Figure 10. Recommended minimum Bootstrap Capacitor value Vs Switching

Frequency

www.irf.com 13
IRAMS10UP60A
Figure 11. Switching Parameter Definitions

VCE IC IC VCE

90% IC
50%
HIN/LIN
90% IC
50% HIN/LIN
HIN/LIN
HIN/LIN
10%
VCE
10% IC
10% IC

TON tr TOFF tf

Figure 11a. Input to Output propaga- Figure 11b. Input to Output

tion turn-on delay time propagation turn-off delay timet

IF
VCE

HIN/LIN

Irr

trr

Figure 11c. Diode Reverse Recovery

14 www.irf.com
 IRAMS10UP60A
Vbus

5V

Ho

Hin1,2,3
IC
Driver U,V,W

Lo
Lin1,2,3

Figure CT1. Switching Loss Circuit

Vbus

Ho IN PWM=4µs
Hin1,2,3
1k 10k
VCC IC
Io
Driver U,V,W
Lin1,2,3
5VZD
Lo
IN
Io

Figure CT2. S.C.SOA Circuit

Vbus

Hin1,2,3 Ho IN
1k 10k
VCC IC
Driver U,V,W Io

5VZD Lin1,2,3 Lo
IN
Io

Figure CT3. R.B.SOA Circuit

www.irf.com 15
IRAMS10UP60A
Package Outline

note 2 note 3

027-E2D24

note 1

Standard pin leadforming option

Notes:
Dimensions in mm
1 - Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking

16 www.irf.com
 IRAMS10UP60A
Package Outline

note 3
note 2

027-E2D24

note 1

Pin leadforming option -2

Notes:
Dimensions in mm
1 - Marking for pin 1 identification
2- Product Part Number
3- Lot and Date code marking

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/02

www.irf.com 17