MJE15034 NPN, MJE15035 PNP Complementary Silicon Plastic Power Transistors

MJE15034 NPN,
MJE15035 PNP
Preferred Device
Complementary Silicon
Plastic Power Transistors
TO−220, NPN & PNP Devices
. . . designed for use as high−frequency drivers in audio amplifiers. http://onsemi.com
• hFE = 100 (Min) @ IC = 0.5 Adc

= 10 (Min) @ IC = 2.0 Adc 4.0 AMPERES
• Collector−Emitter Sustaining Voltage − POWER TRANSISTORS
VCEO(sus) = 350 Vdc (Min) − MJE15034, MJE15035 COMPLEMENTARY
• High Current Gain − Bandwidth Product SILICON
fT = 30 MHz (Min) @ IC = 500 mAdc
350 VOLTS
• TO−220AB Compact Package
• Epoxy meets UL 94 V−0 @ 0.125 in
50 WATTS
• ESD Ratings: Machine Model: C
MARKING DIAGRAM
Human Body Model: 3B
& PIN ASSIGNMENT
MAXIMUM RATINGS 4
MJE15034
Rating Symbol MJE15035 Unit
Collector−Emitter Voltage VCEO 350 Vdc
TO−220AB
Collector−Base Voltage VCB 350 Vdc CASE 221A
Emitter−Base Voltage VEB 5.0 Vdc STYLE 1 MJE1503x
Collector Current − Continuous IC 4.0 Adc LLYWW
− Peak 8.0 1
2 STYLE 1:
Base Current IB 1.0 Adc 3 PIN 1. BASE
2. COLLECTOR
Total Power Dissipation @ TC = 25C PD 50 Watts 3. EMITTER
4. COLLECTOR
Derate above 25C 0.40 W/C
Total Power Dissipation @ TA = 25C PD 2.0 Watts
Derate above 25C 0.016 W/C
Operating and Storage Junction TJ, Tstg – 65 to C MJE1503x = Device Code
Temperature Range + 150 LL = Location Code
Y = Year
THERMAL CHARACTERISTICS WW = Work Week
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.5 C/W
ORDERING INFORMATION
Thermal Resistance, Junction to Ambient RθJA 62.5 C/W
Device Package Shipping
MJE15034 TO−220AB 50 Units/Rail
MJE15035 TO−220AB 50 Units/Rail
Preferred devices are recommended choices for future use

and best overall value.
 Semiconductor Components Industries, LLC, 2003 1 Publication Order Number:

November, 2003 − Rev. 2 MJE15034/D
MJE15034 NPN, MJE15035 PNP
10
TA TC
IC, COLLECTOR CURRENT (AMPS)

100mS
PD, POWER DISSIPATION (WATTS)
3.0 60 DC
1.0
2.0 40
TC 0.1
1.0 20 TA
0 0 0.01
0 20 40 60 80 100 120 140 160 1.0 10 100 1000
T, TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Figure 1. Power Derating Figure 2. Active Region Safe Operating Area
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Characteristic Symbol Min Max Unit
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1) (IC = 10 mAdc, IB = 0) VCEO(sus) 350 − Vdc
µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector Cutoff Current (VCB = 350 Vdc, IE = 0) ICBO − 10
µAdc
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 10
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
DC Current Gain hFE
(IC = 0.1 Adc, VCE = 5.0 Vdc) 100 − −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 0.5 Adc, VCE = 5.0 Vdc) 100 −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
(IC = 1.0 Adc, VCE = 5.0 Vdc) 50 −
(IC = 2.0 Adc, VCE = 5.0 Vdc) 10 −
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Base−Emitter On Voltage
ÎÎÎÎ
ÎÎÎ
DYNAMIC CHARACTERISTICS
(IC = 1.0 Adc, VCE = 5.0 Vdc) VBE(on) − 1.0 Vdc
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎ
Current Gain − Bandwidth Product (Note 2)
ÎÎÎÎ
ÎÎÎ
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
fT 30 − MHz
2. fT = hfe• ftest.
1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL
0.3
0.2
0.2
0.1
0.1 P(pk)
ZθJC(t) = r(t) RθJC
0.07 0.05 RθJC = 2.5°C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN t1
0.03
READ TIME AT t1 t2
0.02 0.01 TJ(pk) − TC = P(pk) ZθJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k
t, TIME (ms)
Figure 3. Thermal Response
http://onsemi.com
2
1000 1000
TJ = 150°C
TJ = 150°C
25°C
hFE, DC CURRENT GAIN

25°C −40°C
100 −40°C 100
10 10
1.0 1.0
0.01 0.1 1.0 10 0.01 0.1 1.0 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain, VCE = 5.0 V Figure 5. DC Current Gain, VCE = 5.0 V
NPN MJE15034 PNP MJE15035
1000 1000
TJ = 150°C
TJ = 150°C
25°C
25°C

−40°C
100 −40°C 100
10 10
1.0 1.0
0.01 0.1 1.0 10 0.01 0.1 1.0 10
Figure 6. DC Current Gain, VCE = 20 V Figure 7. DC Current Gain, VCE = 20 V

VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10 10
IC/IB = 10 IC/IB = 10
1.0 1.0
25°C −40°C
TJ = 150°C
0.1 0.1 TJ = 150°C
−40°C
25°C
0.01 0.01
0.01 0.1 1.0 10 0.01 0.1 1.0 10
Figure 8. VCE(sat) Figure 9. VCE(sat)

3
10 10
IC/IB = 10 IC/IB = 10
BASE−EMITTER VOLTAGE (V)
BASE−EMITTER VOLTAGE (V)

1.0 −40°C 1.0 −40°C
25°C 25°C
TJ = 150°C TJ = 150°C
0.1 0.1
0.01 0.1 1.0 10 0.01 0.1 1.0 10
Figure 10. VBE(sat) Figure 11. VBE(sat)

1.2 1.4
VBE(on), BASE−EMITTER VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)

1.0 1.2
−40°C 1.0
0.8
−40°C
0.8
0.6
25°C 0.6
25°C
0.4
0.4
TJ = 150°C
TJ = 150°C
0.2 0.2
0.0 0.0
0.01 0.1 1.0 10 0.01 0.1 1.0 10
Figure 12. VBE(on) Figure 13. VBE(on)

fT, CURRENT BANDWIDTH PRODUCT (MHz)
fT, CURRENT BANDWIDTH PRODUCT (MHz)
80 100
70 TJ = 25°C TJ = 25°C
f test = 1 MHz 80 f test = 1 MHz
60
50 60
40
30 40
VCE= 10 V
20 VCE= 10 V
20
10
0 0
0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 10
Figure 14. Typical Current Gain Bandwidth Product Figure 15. Typical Current Gain Bandwidth Product
4
PACKAGE DIMENSIONS
TO−220 THREE−LEAD
TO−220AB
CASE 221A−09
ISSUE AA
NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER
−T− PLANE
ANSI Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE
T S ALL BODY AND LEAD IRREGULARITIES
ARE ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
STYLE 1:
N PIN 1. BASE V 0.045 −−− 1.15 −−−
2. COLLECTOR Z −−− 0.080 −−− 2.04
3. EMITTER
4. COLLECTOR
5
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION

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http://onsemi.com MJE15034/D
6

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MJE15034 NPN,

• hFE = 100 (Min) @ IC = 0.5 Adc

MJE15034 TO−220AB 50 Units/Rail

MJE15035 TO−220AB 50 Units/Rail

Preferred devices are recommended choices for future use

 Semiconductor Components Industries, LLC, 2003 1 Publication Order Number:

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Thermal Response

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 6. DC Current Gain, VCE = 20 V Figure 7. DC Current Gain, VCE = 20 V

VCE, COLLECTOR−EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 8. VCE(sat) Figure 9. VCE(sat)

BASE−EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 10. VBE(sat) Figure 11. VBE(sat)

VBE(on), BASE−EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

Figure 12. VBE(on) Figure 13. VBE(on)

IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)

PUBLICATION ORDERING INFORMATION

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