DEPARTMENT OF ELECTRICAL ENGINEERING, IGIT SARANG.

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DEPARTMENT OF ELECTRICAL ENGINEERING
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IGI
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IGIT SARANG
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PARJANG
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DHENKANAL
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ODISHA-759146
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PREPARED BY Manoj Kumar Chaudhury (Assitant Professor-EE)

DEPARTMENT OF ELECTRICAL ENGINEERING, IGIT SARANG.

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POWER ELECTRONICS LAB MANUAL
5TH SEM B Tech
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IGI
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Electrical Engineering
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U AL
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BM
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PREPARED BY Manoj Kumar Chaudhury (Assitant Professor-EE)

DEPARTMENT OF ELECTRICAL ENGINEERING, IGIT SARANG.

CONTENTS
LIST OF EXPERIMENTS

1. Study of the V-I characteristics of SCR, TRIAC and MOSFET.

2. Study of the cosine controlled triggering circuit

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3. To measure the latching and holding current of a SCR

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4. Study of the single-phase half wave-controlled rectifier and semi converter circuit with R
and R-L Load

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5. Study of single-phase full wave-controlled rectifier circuits (mid-point and Bridge type)

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with R and R-L Load

6. Study of three phase full wave-controlled rectifier circuits (Full and Semi converter) with
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R and R-L Load

7. Study of the Buck converter and boost converter.

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8. Study of the single phase PWM voltage source inverter.

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9. Study the performance of three-phase VSI with PWM control.

10. Study of the forward converter and fly-back converter.

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PREPARED BY Manoj Kumar Chaudhury (Assitant Professor-EE)

DEPARTMENT OF ELECTRICAL ENGINEERING, IGIT SARANG.

PROGRAM OBJECTIVES & OUTCOMES

PROGRAM OBJECTIVES:
1. To simulate and design various gate driver circuits.

2. To familiarize the students by introducing softwares like Multisim, and help them to simulate and
analyze different converters.

3. To enable the students to study & simulate circuits using Matlab software and on hardware kits.

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PROGRAM OUTCOMES:

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1. Ability to design and conduct simulation and experiments.

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2. Ability to use the techniques, skills and various engineering tools necessary for engineering
practice.

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3. Ability to identify, formulate & solve engineering problems with simulation.

4. Ability to simulate characteristics of SCR, MOSFET, .

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5. Ability to simulate gate firing circuits
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6. Ability to simulate Rectifiers, Choppers, AC voltage controller, Inverter circuits and on hardware
kits.
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LA
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PREPARED BY Manoj Kumar Chaudhury (Assitant Professor-EE)

DEPARTMENT OF ELECTRICAL ENGINEERING, IGIT SARANG.

STUDY EXPERIMENTS
1. Study of the V-I characteristics of SCR, TRIAC and MOSFET.

Expt. 1

AIM: - To plot the characteristics of SCR and find out latching and holding current.

APPARATUS REQUIRED:

SCR trainer kit, Patch chords, multi-meter

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CIRCUIT DIAGRAM:

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PROCEDURE:

To obtain V-I Characteristics of SCR:

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1. The connections are made as per circuit diagram.

2. Switch on the regulated power supply. Keep VA and VG at minimum position.

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3. Set load potentiometer in the minimum position. Adjust Ig to Ig1 say 9-10mA by varying VG or gate
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potentiometer. Slowly vary VA and note down VAK and IAK readings for every 3 volts. Note down VAK, IAK.
Enter the reading in a tabular column. Gradually increase VA till the SCR becomes ON. This can
noticed by sudden drop in VAK and rise in IAK. Now increase supply voltage gradually and IA are noted
for three or four readings. Note down the readings. Plot the graph of VAK V/s IAK.

5. Repeat above step for other gate current values and plot the graph.

6. Tabulate the readings in the table.

7. Plot a graph of VAK versus IA.

PREPARED BY Manoj Kumar Chaudhury (Assitant Professor-EE)

DEPARTMENT OF ELECTRICAL ENGINEERING, IGIT SARANG.

To determine latching current IL:

1. Apply about 20V across the Thyristor. Keep the load potentiometer at minimum position.
2. Gradually increase the gate voltage till the device is turned ON. This is the minimum gate
current to turn ON the Thyristor.
3. Adjust the gate voltage to little higher value.
4. The gate voltage should be kept constant.
5. Than ensure the device is in ON state.
6. Start reducing the anode voltage in steps say-2V. Device status by turning OFF the gate
supply.
7. If the anode current is above the latching current, the device will remain in ON state even

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after the gate supply is withdrawn and turn OFF otherwise. Thus find the minimum anode

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current above which the device remains in ON state without gate supply. Repeat the
experiment to find more accurate values of latching current.

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To determine holding current IH:

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1. Increase the load current above the latching current.
2. Ensure the device is in ON state.
3. Switch OFF the gate supply permanently. IGI
4. Start reducing the anode voltage in steps of 2V. Simultaneously check the status of SCR if it
OFF.
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5. Note down the anode currents.
6. The current value just before it falls to zero gives the holding current.
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7. Reverse the polarity of anode voltage. Vary anode voltage in steps of 5V up to 25V to obtain
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the reverse characteristics.

Tabulation:
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Result and Discussion:

In discussion write down few question answer regarding Thyristor.

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*NOTE: Experiments 1 and 3 will be covered in 2 classes. Class 1 will be for V-I characteristics of
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SCR and to find out latching and holding current. Class 2 will be for V_I characteristics of TRIAC
and MOSFET.
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PREPARED BY Manoj Kumar Chaudhury (Assitant Professor-EE)