STM32F446xC/E

Arm® Cortex®-M4 32-bit MCU+FPU, 225 DMIPS, up to 512 KB Flash/128+4 KB RAM,

USB OTG HS/FS, seventeen TIMs, three ADCs and twenty communication interfaces
Datasheet - production data

Features
 Core: Arm® 32-bit Cortex®-M4 CPU with FPU,
Adaptive real-time accelerator (ART
LQFP64 (10 × 10 mm) WLCSP 81 UFBGA144 (7 x 7 mm)
Accelerator) allowing 0-wait state execution LQFP100 (14 × 14 mm) UFBGA144 (10 x 10 mm)
from Flash memory, frequency up to 180 MHz, LQFP144 (20 x 20 mm)
MPU, 225 DMIPS/1.25 DMIPS/MHz  Up to 114 I/O ports with interrupt capability
(Dhrystone 2.1), and DSP instructions – Up to 111 fast I/Os up to 90 MHz
 Memories – Up to 112 5 V-tolerant I/Os
– 512 Kbytes of Flash memory  Up to 20 communication interfaces
– 128 Kbytes of SRAM – SPDIF-Rx
– Flexible external memory controller with up – Up to 4× I2C interfaces (SMBus/PMBus)
to 16-bit data bus: SRAM, PSRAM, – Up to four USARTs and two UARTs
SDRAM/LPSDR SDRAM, NOR/NAND (11.25 Mbit/s, ISO7816 interface, LIN,
Flash memories IrDA, modem control)
– Dual mode QuadSPI interface – Up to four SPIs (45 Mbits/s), three with
 LCD parallel interface, 8080/6800 modes muxed I2S for audio class accuracy via
 Clock, reset and supply management internal audio PLL or external clock
– 1.7 V to 3.6 V application supply and I/Os – 2x SAI (serial audio interface)
– POR, PDR, PVD and BOR – 2× CAN (2.0B Active)
– 4 to 26 MHz crystal oscillator – SDIO interface
– Internal 16 MHz factory-trimmed RC (1% – Consumer electronics control (CEC) I/F
accuracy)  Advanced connectivity
– 32 kHz oscillator for RTC with calibration – USB 2.0 full-speed device/host/OTG
– Internal 32 kHz RC with calibration controller with on-chip PHY
 Low power – USB 2.0 high-speed/full-speed
– Sleep, Stop and Standby modes device/host/OTG controller with dedicated
– VBAT supply for RTC, 20×32 bit backup DMA, on-chip full-speed PHY and ULPI
registers plus optional 4 KB backup SRAM – Dedicated USB power rail enabling on-chip
 3× 12-bit, 2.4 MSPS ADC: up to 24 channels PHYs operation throughout the entire MCU
and 7.2 MSPS in triple interleaved mode power supply range
 2× 12-bit D/A converters  8- to 14-bit parallel camera interface up to
 General-purpose DMA: 16-stream DMA 54 Mbytes/s
controller with FIFOs and burst support  CRC calculation unit
 Up to 17 timers: 2x watchdog, 1x SysTick timer  RTC: subsecond accuracy, hardware calendar
and up to twelve 16-bit and two 32-bit timers up  96-bit unique ID
to 180 MHz, each with up to four IC/OC/PWM
or pulse counter Table 1. Device summary
 Debug mode Reference Part numbers
– SWD and JTAG interfaces
STM32F446MC, STM32F446ME,
– Cortex®-M4 Trace Macrocell™ STM32F446RC, STM32F446RE,
STM32F446xC/E
STM32F446VC, STM32F446VE,
STM32F446ZC, STM32F446ZE.

January 2021 DS10693 Rev 10 1/198

This is information on a product in full production. www.st.com
Contents STM32F446xC/E

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2.1 Compatibility with STM32F4 family . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1 Arm® Cortex®-M4 with FPU and embedded Flash and SRAM . . . . . . . . 17
3.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 17
3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5 CRC (cyclic redundancy check) calculation unit . . . . . . . . . . . . . . . . . . . 18
3.6 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.7 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.8 DMA controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.9 Flexible memory controller (FMC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.10 Quad SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.11 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . . 21
3.12 External interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.13 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.14 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.15 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.16 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16.1 Internal reset ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.16.2 Internal reset OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.17 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.17.1 Regulator ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.17.2 Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.17.3 Regulator ON/OFF and internal reset ON/OFF availability . . . . . . . . . . 27
3.18 Real-time clock (RTC), backup SRAM and backup registers . . . . . . . . . . 28
3.19 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.20 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.21 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

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3.21.1 Advanced-control timers (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . 31

3.21.2 General-purpose timers (TIMx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.21.3 Basic timers TIM6 and TIM7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.21.4 Independent watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.21.5 Window watchdog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.21.6 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.22 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.23 Universal synchronous/asynchronous receiver transmitters (USART) . . 32
3.24 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.25 HDMI (high-definition multimedia interface) consumer
electronics control (CEC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
3.26 Inter-integrated sound (I2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.27 SPDIF-RX Receiver Interface (SPDIFRX) . . . . . . . . . . . . . . . . . . . . . . . . 34
3.28 Serial audio interface (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.29 Audio PLL (PLLI2S) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.30 Serial audio interface PLL (PLLSAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.31 Secure digital input/output interface (SDIO) . . . . . . . . . . . . . . . . . . . . . . . 35
3.32 Controller area network (bxCAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.33 Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 36
3.34 Universal serial bus on-the-go high-speed (OTG_HS) . . . . . . . . . . . . . . . 36
3.35 Digital camera interface (DCMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.36 General-purpose input/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.37 Analog-to-digital converters (ADCs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.38 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.39 Digital-to-analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.40 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.41 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

4 Pinout and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

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6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70

6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
6.3.2 VCAP_1 / VCAP_2 external capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . 76
6.3.3 Operating conditions at power-up / power-down (regulator ON) . . . . . . 77
6.3.4 Operating conditions at power-up / power-down (regulator OFF) . . . . . 77
6.3.5 Reset and power control block characteristics . . . . . . . . . . . . . . . . . . . 78
6.3.6 Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
6.3.7 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
6.3.8 Wakeup time from low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
6.3.9 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 100
6.3.10 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 105
6.3.11 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
6.3.12 PLL spread spectrum clock generation (SSCG) characteristics . . . . . 108
6.3.13 Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
6.3.14 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
6.3.15 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . 114
6.3.16 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
6.3.17 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
6.3.18 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
6.3.19 TIM timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
6.3.20 Communications interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
6.3.21 12-bit ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
6.3.22 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
6.3.23 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
6.3.24 Reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
6.3.25 DAC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
6.3.26 FMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
6.3.27 Camera interface (DCMI) timing specifications . . . . . . . . . . . . . . . . . . 168
6.3.28 SD/SDIO MMC card host interface (SDIO) characteristics . . . . . . . . . 169
6.3.29 RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171

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7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172

7.1 LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
7.2 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
7.3 LQFP144 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
7.4 UFBGA144 7 x 7 mm package information . . . . . . . . . . . . . . . . . . . . . . 182
7.5 UFBGA144 10 x 10 mm package information . . . . . . . . . . . . . . . . . . . . 185
7.6 WLCSP81 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
7.7 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191

8 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192

Appendix A Application block diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193

A.1 USB OTG full speed (FS) interface solutions . . . . . . . . . . . . . . . . . . . . . 193
A.2 USB OTG high speed (HS) interface solutions . . . . . . . . . . . . . . . . . . . . 195

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196

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List of tables STM32F446xC/E

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. STM32F446xC/E features and peripheral counts. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 3. Voltage regulator configuration mode versus device operating mode . . . . . . . . . . . . . . . . 25
Table 4. Regulator ON/OFF and internal reset ON/OFF availability. . . . . . . . . . . . . . . . . . . . . . . . . 27
Table 5. Voltage regulator modes in stop mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 6. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Table 7. Comparison of I2C analog and digital filters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 8. USART feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 9. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 10. STM32F446xx pin and ball descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 11. Alternate function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Table 12. STM32F446xC/E register boundary addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66
Table 13. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Table 14. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 15. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
Table 16. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74
Table 17. Limitations depending on the operating power supply range . . . . . . . . . . . . . . . . . . . . . . . 76
Table 18. VCAP_1 / VCAP_2 operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Table 19. Operating conditions at power-up/power-down (regulator ON) . . . . . . . . . . . . . . . . . . . . . 77
Table 20. Operating conditions at power-up / power-down (regulator OFF). . . . . . . . . . . . . . . . . . . . 77
Table 21. reset and power control block characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78
Table 22. Over-drive switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79
Table 23. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled except prefetch) or RAM . . . . . . . 81
Table 24. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled with prefetch) or RAM . . . . . . . . . 82
Table 25. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled) . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Table 26. Typical and maximum current consumption in Sleep mode . . . . . . . . . . . . . . . . . . . . . . . . 84
Table 27. Typical and maximum current consumptions in Stop mode . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 28. Typical and maximum current consumptions in Standby mode . . . . . . . . . . . . . . . . . . . . . 88
Table 29. Typical and maximum current consumptions in VBAT mode. . . . . . . . . . . . . . . . . . . . . . . . 89
Table 30. Typical current consumption in Run mode, code with data processing
running from Flash memory or RAM, regulator ON
(ART accelerator enabled except prefetch), VDD = 1.7 V . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 31. Typical current consumption in Run mode, code with data processing
running from Flash memory, regulator OFF (ART accelerator enabled except prefetch). . 92
Table 32. Typical current consumption in Sleep mode, regulator ON, VDD = 1.7 V . . . . . . . . . . . . . 93
Table 33. Typical current consumption in Sleep mode, regulator OFF. . . . . . . . . . . . . . . . . . . . . . . . 94
Table 34. Switching output I/O current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 35. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 36. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 37. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 38. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 39. HSE 4-26 MHz oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Table 41. HSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 42. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

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Table 43. Main PLL characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106

Table 44. PLLI2S (audio PLL) characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 45. PLLSAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 46. SSCG parameters constraint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 47. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Table 48. Flash memory programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 49. Flash memory programming with VPP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 50. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
Table 51. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Table 52. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 53. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
Table 54. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 55. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
Table 56. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 57. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 58. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 59. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 60. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 61. I2C characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 62. FMPI2C characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 63. SPI dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 64. QSPI dynamic characteristics in SDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 65. QSPI dynamic characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 66. I2S dynamic characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 67. SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Table 68. USB OTG full speed startup time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 69. USB OTG full speed DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Table 70. USB OTG full speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 71. USB HS DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 72. USB HS clock timing parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 73. Dynamic characteristics: USB ULPI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 74. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 75. ADC static accuracy at fADC = 18 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 76. ADC static accuracy at fADC = 30 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 77. ADC static accuracy at fADC = 36 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 78. ADC dynamic accuracy at fADC = 18 MHz - Limited test conditions . . . . . . . . . . . . . . . . . 141
Table 79. ADC dynamic accuracy at fADC = 36 MHz - Limited test conditions . . . . . . . . . . . . . . . . . 141
Table 80. Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Table 81. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Table 82. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 83. internal reference voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 84. Internal reference voltage calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 85. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR Read timings. . . . . . . . . . . . . . . . . 150
Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR read 
NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings . . . . . . . . . . . . . . . . . 151
Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR write 
NWAIT timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 90. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 91. Asynchronous multiplexed PSRAM/NOR read NWAIT timings . . . . . . . . . . . . . . . . . . . . 153
Table 92. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 155

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Table 93. Asynchronous multiplexed PSRAM/NOR write NWAIT timings . . . . . . . . . . . . . . . . . . . . 155

Table 94. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
Table 95. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
Table 96. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 160
Table 97. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Table 98. Switching characteristics for NAND Flash read cycles . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Table 99. Switching characteristics for NAND Flash write cycles. . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 100. SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Table 101. LPSDR SDRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Table 102. SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Table 103. LPSDR SDRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 104. DCMI characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 105. Dynamic characteristics: SD / MMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Table 106. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V . . . . . . . . . . . . . . . 171
Table 107. RTC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Table 108. LQFP64 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Table 109. LQPF100 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Table 110. LQFP144 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Table 111. UFBGA144 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Table 112. UFBGA144 recommended PCB design rules (0.50 mm pitch BGA) . . . . . . . . . . . . . . . . 183
Table 113. UFBGA144 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Table 114. UFBGA144 recommended PCB design rules (0.80 mm pitch BGA) . . . . . . . . . . . . . . . . 186
Table 115. WLCSP81 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Table 116. WLCSP81 recommended PCB design rules (0.4 mm pitch) . . . . . . . . . . . . . . . . . . . . . . 189
Table 117. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 118. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196

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STM32F446xC/E List of figures

List of figures

Figure 1. Compatible board design for LQFP100 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 2. Compatible board for LQFP64 package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 3. STM32F446xC/E block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 4. STM32F446xC/E and Multi-AHB matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5. VDDUSB connected to an external independent power supply . . . . . . . . . . . . . . . . . . . . . 23
Figure 6. Power supply supervisor interconnection with internal reset OFF . . . . . . . . . . . . . . . . . . . 24
Figure 7. Regulator OFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 8. Startup in regulator OFF: slow VDD slope
power-down reset risen after VCAP_1 / VCAP_2 stabilization . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 9. Startup in regulator OFF mode: fast VDD slope
power-down reset risen before VCAP_1 / VCAP_2 stabilization. . . . . . . . . . . . . . . . . . . . . . . 27
Figure 10. STM32F446xC/xE LQFP64 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 11. STM32F446xC/xE LQFP100 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 12. STM32F446xC LQFP144 pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 13. STM32F446xC/xE WLCSP81 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 14. STM32F446xC/xE UFBGA144 ballout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 15. Memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65
Figure 16. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Figure 17. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Figure 18. Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
Figure 19. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72
Figure 20. External capacitor CEXT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
Figure 21. Typical VBAT current consumption
(RTC ON/backup RAM OFF and LSE in low power mode) . . . . . . . . . . . . . . . . . . . . . . . . 89
Figure 22. Typical VBAT current consumption
(RTC ON/backup RAM OFF and LSE in high drive mode). . . . . . . . . . . . . . . . . . . . . . . . . 90
Figure 23. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Figure 24. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Figure 25. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Figure 26. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104
Figure 27. LACCHSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Figure 28. ACCLSI versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Figure 29. PLL output clock waveforms in center spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 30. PLL output clock waveforms in down spread mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Figure 31. FT I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Figure 32. I/O AC characteristics definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Figure 33. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 34. I2C bus AC waveforms and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Figure 35. FMPI2C timing diagram and measurement circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 36. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Figure 37. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Figure 38. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Figure 39. I2S slave timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Figure 40. I2S master timing diagram (Philips protocol)(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Figure 41. SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 42. SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Figure 43. USB OTG full speed timings: definition of data signal rise and fall time . . . . . . . . . . . . . . 136
Figure 44. ULPI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138

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List of figures STM32F446xC/E

Figure 45. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142

Figure 46. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Figure 47. Power supply and reference decoupling (VREF+ not connected to VDDA). . . . . . . . . . . . . 143
Figure 48. Power supply and reference decoupling (VREF+ connected to VDDA). . . . . . . . . . . . . . . . 144
Figure 49. 12-bit buffered/non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Figure 50. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms . . . . . . . . . . . . . . 149
Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms . . . . . . . . . . . . . . 151
Figure 52. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 53. Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 154
Figure 54. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Figure 55. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Figure 56. Synchronous non-multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . 160
Figure 57. Synchronous non-multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Figure 58. NAND controller waveforms for read access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 59. NAND controller waveforms for write access . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
Figure 60. NAND controller waveforms for common memory read access . . . . . . . . . . . . . . . . . . . . 164
Figure 61. NAND controller waveforms for common memory write access. . . . . . . . . . . . . . . . . . . . 164
Figure 62. SDRAM read access waveforms (CL = 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Figure 63. SDRAM write access waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Figure 64. DCMI timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Figure 65. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Figure 66. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Figure 67. LQFP64 outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 68. LQFP64 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Figure 69. LQFP64 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 70. LQFP100 outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Figure 71. LQFP100 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
Figure 72. LQFP100 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Figure 73. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline . . . . . . . . . . . . . . . 178
Figure 74. LQFP144 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Figure 75. LQFP144 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Figure 76. UFBGA144 outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Figure 77. UFBGA144 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
Figure 78. UFBGA144 7 x 7 mm marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . 184
Figure 79. UFBGA144 outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Figure 80. UFBGA144 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Figure 81. UFBGA144 10 x 10 mm marking example (package top view) . . . . . . . . . . . . . . . . . . . . 187
Figure 82. WLCSP81 outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Figure 83. WLCSP81 recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Figure 84. WLCSP81 marking example (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Figure 85. USB controller configured as peripheral-only and used in full speed mode . . . . . . . . . . . 193
Figure 86. USB controller configured as host-only and used in full speed mode. . . . . . . . . . . . . . . . 193
Figure 87. USB controller configured in dual mode and used in full speed mode . . . . . . . . . . . . . . . 194
Figure 88. USB controller configured as peripheral, host, or dual-mode
and used in high speed mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195

10/198 DS10693 Rev 10

STM32F446xC/E Introduction

1 Introduction

This document provides the description of the STM32F446xC/E products, based on an

Arm®(a) core. It must be read in conjunction with the RM0390 reference manual, available
on www.st.com.
For information on the Cortex®-M4 core refer to the Cortex®-M4 programming manual
(PM0214), available on www.st.com.

a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

DS10693 Rev 10 11/198

38
Description STM32F446xC/E

2 Description

The STM32F446xC/E devices are based on the high-performance Arm® Cortex®-M4 32-bit
RISC core operating at a frequency of up to 180 MHz. The Cortex-M4 core features a
floating point unit (FPU) single precision supporting all Arm® single-precision 
data-processing instructions and data types. It also implements a full set of DSP instructions
and a memory protection unit (MPU) that enhances application security.
The STM32F446xC/E devices incorporate high-speed embedded memories (Flash memory
up to 512 Kbytes, up to 128 Kbytes of SRAM), up to 4 Kbytes of backup SRAM, and an
extensive range of enhanced I/Os and peripherals connected to two APB buses, two AHB
buses and a 32-bit multi-AHB bus matrix.
All devices offer three 12-bit ADCs, two DACs, a low-power RTC, twelve general-purpose
16-bit timers including two PWM timers for motor control, two general-purpose 32-bit timers.
They also feature standard and advanced communication interfaces.
 Up to four I2Cs
 Four SPIs, three I2Ss full simplex: to achieve audio class accuracy, the I2S peripherals
can be clocked via a dedicated internal audio PLL or via an external clock to allow
synchronization
 Four USARTs plus two UARTs
 An USB OTG full-speed and an USB OTG high-speed with full-speed capability (with
the ULPI), both with dedicated power rails allowing to use them throughout the whole
power range
 Two CANs
 Two SAIs serial audio interfaces: to achieve audio class accuracy, the SAIs can be
clocked via a dedicated internal audio PLL
 SDIO/MMC interface
 Camera interface
 HDMI-CEC
 SPDIF receiver (SPDIFRx)
 QuadSPI
Advanced peripherals include an SDIO, a flexible memory control (FMC) interface, a
camera interface for CMOS sensors. Refer to Table 2 for the list of peripherals available on
each part number.
The STM32F446xC/E devices operate in the –40 to +105 °C temperature range from a 
1.7 to 3.6 V power supply.
The supply voltage can drop down to 1.7 V with the use of an external power supply
supervisor (refer to Section 3.16.2: Internal reset OFF). A comprehensive set of 
power-saving modes enables the design of low-power applications.
The STM32F446xC/E devices offer devices in six packages, ranging from 64 to 144 pins.
The set of included peripherals changes with the chosen device.
These features make the STM32F446xC/E microcontrollers suitable for a wide range of
applications, namely motor drive and control, medical equipment, industrial (PLC, inverters,
circuit breakers), printers, and scanners, alarm systems, video intercom and HVAC, and
home audio appliances.

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STM32F446xC/E Description

Table 2. STM32F446xC/E features and peripheral counts

STM32 STM32 STM32 STM32 STM32 STM32 STM32 STM32
Peripherals
F446MC F446ME F446RC F446RE F446VC F446VE F446ZC F446ZE

Flash memory in Kbytes 256 512 256 512 256 512 256 512

SRAM in System 128 (112+16)

Kbytes Backup 4
FMC memory controller No Yes(1)
General-
10
purpose
Timers Advanced-
2
control
Basic 2
2S
SPI / I 4/3 (simplex)(2)
I2C 4/1 FMP +
USART/
4/2
UART
USB
Yes (6-Endpoints)
OTG FS
USB
Communication Yes (8-Endpoints)
OTG HS
interfaces
CAN 2
SAI 2
SDIO Yes
SPDIF-Rx 1
HDMI-CEC 1
Quad SPI(3) 1
Camera interface Yes
GPIOs 63 50 81 114

12-bit ADC 3
Number of channels 14 16 16 24
12-bit DAC Yes
Number of channels 2
Maximum CPU frequency 180 MHz
Operating voltage 1.8 to 3.6 V(4)
Ambient temperatures: –40 to +85 °C /–40 to +105 °C
Operating temperatures
Junction temperature: –40 to + 125 °C
LQFP144
Packages WLCSP81 LQFP64 LQFP100
UFBGA144

DS10693 Rev 10 13/198

38
Description STM32F446xC/E

1. For the LQFP100 package only FMC Bank1 is available, it can only support a multiplexed NOR/PSRAM
memory using the NE1 Chip Select. The interrupt line cannot be used as Port G is not available on this
package.
2. The SPI1, SPI2 and SPI3 interfaces give the flexibility to work in an exclusive way in either SPI mode or I2S
audio mode.
3. For the LQFP64 package the Quad SPI is available with limited features.
4. VDD/VDDA minimum value of 1.7 V is obtained when the device operates in reduced temperature range, and
with the use of an external power supply supervisor (refer to Section 3.16.2: Internal reset OFF).

2.1 Compatibility with STM32F4 family

The STM32F446xC/xV is software and feature compatible with the STM32F4 family.
The STM32F446xC/xV can be used as drop-in replacement of the other STM32F4 products
but some small changes have to be done on the PCB board.

Figure 1. Compatible board design for LQFP100 package

STM32F446xx
STM32F405/STM32F415 line
STM32F407/STM32F417 line 58 PD11 58 PD11
57 PD10 57 PD10
STM32F427/STM32F437 line 56 PD9 56 PD9
STM32F429/STM32F439 line 55 PD8 PB11 not available anymore 55 PD8
54 PB15 Replaced by V CAP1 54 PB15
53 PB14 53 PB14
52 PB13 52 PB13
51 PB12 51 PB12
41
42
43
44
45
46
47
48
49
50

48
49
41
42
43
44
45
46
47

50
VDD
PE10

PE12
PE13
PE14
PE15
PB10
PE11

VCAP1
PB11

VCAP1

VDD
PE10

PE12
PE13
PE14
PE15
PB10
PE11

VSS

VSS VDD
VSS VDD
MS33846V2

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STM32F446xC/E Description

Figure 2. Compatible board for LQFP64 package

STM32F405/STM32F415 line STM32F446xx

PC12

PC10
PC11

PA15
PA14

PC12

PC10
PC11

PA15
PA14
53 52 51 50 49
53 52 51 50 49
48 VDD VDD 48 VDD VDD
47 VCAP2
47 VSS
46 PA13
46 PA13
45 PA12
45 PA12
44 PA11
44 PA11
43 PA10
43 PA10
42 PA9
41 PA8
VSS 42 PA9
VSS
41 PA8
40 PC9
40 PC9
39 PC8
39 PC8
38 PC7
38 PC7
37 PC6
37 PC6
36 PB15 PB11 not available anymore 36 PB15
35 PB14 Replaced by VCAP1 35 PB14
34 PB13
34 PB13
33 PB12
28 29 30 31 32 33 PB12
28 29 30 31 32
VCAP1
PB2
PB10

VDD
PB11

VCAP1
PB2
PB10

VSS
VDD
VCAP increased to 4.7 μF
ESR 1 Ω or below

VSS VDD
VSS VDD

MS33845V2

Figure 3 shows the STM32F446xx block diagram.

DS10693 Rev 10 15/198

38
Description STM32F446xC/E

Figure 3. STM32F446xC/E block diagram

JTRST, JTDI,
JTCK/SWCLK CLK, NE[3:0], A[23:0], D[31:0]
JTAG & SW MPU FPU EXT MEM CTL (FMC) NOEN, NWEN, NBL[1:0]
JTDO/SWD, JTDO SDCLKE[1:0], SDNE[1:0]
ETM NVIC SRAM,PSRAM,NOR-FLASH

AHB_EMI
TRACECK NRAS, NCAS, NADV
NAND-FLASH, SDRAM NWAIT, INTN
TRACED(3:0) ARM
CORTEX M4 I-BUS CLK, CSa, CSb, D[7:0]
QuadSPI
180MHz D-BUS

AHB BUS MATRIX 7S8M

S-BUS

FLASH
FLASH 512kB

I/F
VDDUSB = 3.3 TO 3.6 V
CAMERA

FIFO
D+, D- HSYNC, VSYNC
PHY

USB DMA/ SRAM1 112KB PIXCK, D(13:0)

ULPI : CLK, D(7:0),
OTG HS FIFO ITF
DIR, STP, NXT
SRAM2 16KB USB VDDUSB = 3.3 TO 3.6 V

PHY
FIFO
ID, VBUS 8 Streams
GP-DMA2 D+, D-
FIFO OTG FS ID, VBUS
AHB2 180MHz
8 Streams POR
GP-DMA1 FIFO AHB1 180MHz SUPPLY
Reset SUPERVISION
Int POR/PDR/
BOR VDDA , VSSA
NRESET
@VDDA PVD

RC HS @VDDA
PA(15:0)
GPIO PORT
USART 2MBpsA RC LS POWER MNGT
V DD =1.8 to 3.6V
PB(15:0) PLL1+PLL2+PLL3 VOLT. REG.

PWRCTL
GPIO PORT
USART B
2MBps VSS
3.3V TO 1.2V
PC(15:0) RESET& VCAP
GPIO PORT
USART C
2MBps @VDD
CLOCK
MANAGT
CTRL
PD(15:0) XTAL OSC OSCIN
GPIO PORT
USART 2MBpsD 4-16MHz OSCOUT
PE(15:0) GPIO PORT
USART E
2MBps WDG32K
FCLK
H CLK
APBP2 CLK
APBP1 CLK

AH B1PCLK
AHB2PCLK

PF(15:0)
GPIO PORT
USART F
2MBps Standby interface
VBAT =1.8 to 3.6V
@VBAT
PG(15:0) GPIO PORT
USART G
2MBps OSC32_IN
XTAL 32kHz OSC32_OUT
LS

PH(1 :0) GPIO PORT

USART H
2MBps RTC
CRC AWU ALARM_OUT
BKP REG STAMP1
LS

STAMP2
4KB BKPRAM

TIMER2 32b 4 CH, ETR as AF

TIMER3 16b 4 CH, ETR as AF

114 AF EXT IT.

USART WKUP
2MBps GPDMA2 GPDMA1 TIMER4 16b 4 CH, ETR as AF

D(7:0)
FIFO

CMD, CK as AF SDIO / MMC TIMER5 32b 4 CH a s AF

AHB/APB2 AHB/APB1
4 PWM, 4 PWM, 16b TIMER12 16b 2 CH as AF
ETR, BKIN as AF TIMER 12MBps
USART / PWM
16b 1 CH as AF
4 PWM, 4 PWM, 16b TIMER13
ETR, BKIN as AF USART
TIMER 82MBps
/ PWM
2 CH as AF 16b TIMER14 16b 1 CH as AF
TIMER
USART92MBps
smcard RX, TX, SCK,
1 CH as AF 16b USART2 irDA CTS, RTS as AF
TIMER10
USART 2MBps
smcard RX, TX, SCK
16b USART3 CTS, RTS as AF
1 CH as AF irDA
TIMER11
USART 2MBps WinWATCHDOG
RX, TX, SCK, UART4 RX, TX as AF
smcard
CTS, RTS as AF USART USART
2MBps 1
APB2 90 MHz

irDA
RX, TX, SCK, UART5 RX, TX as AF
smcard
CTS, RTS as AF USART USART
2MBps 6
irDA SPDIF SPDIF_RX[3:0] as AF
MOSI, MISO
SPI1/I2S
USART 2MBps
SCK, NSS as AF HDMI-CEC HDMI_CEC a s AF
MOSI, MISO MOSI, MISO, SCK
SCK, NSS as AF USARTSPI
2MBps
4 16b SPI2/I2S
TIMER6 NSS/WS, MCK as AF
APB2 60MHz

A PB1 45 MHz

16b
FIFO

SD, SCK, FS USARTSAI

2MBps
TIMER7 SPI3/I2S MOSI, MISO, SCK
1 NSS/WS, MCK as AF
MCLK as AF
SD, SCK, FS
FIFO

MCLK as AF USARTSAI 2
2MBps SCL, SDA, SMBAL as AF
I2C1/SMBUS
@VDDA
Dig. Filter

VDDREF_ADC SCL, SDA, SMBAL as AF

I2C2/SMBUS
8 AIN common USART 2MBps
TEMP SENSOR
to the 3 ADCs SCL, SDA, SMBAL as AF
I2C3/SMBUS
8 AIN common
ADC1 @VDDA
to the ADC1 & 2 FMPI2C1
ADC2 DAC1
SCL, SDA, SM BAL as AF
IF ITF
8 AIN to ADC3 ADC 3 DAC2 bxCAN1 TX, RX
FIFO

bxCAN2 TX, RX

DAC1 as AF DAC2 as AF
MS33840V3

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STM32F446xC/E Functional overview

3 Functional overview

3.1 Arm® Cortex®-M4 with FPU and embedded Flash and SRAM
The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU core is a 32-bit RISC processor that features exceptional
code-efficiency, delivering the high-performance expected from an Arm core in the memory
size usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU (floating point unit) speeds up software development by using
metalanguage development tools, while avoiding saturation.
The STM32F446xC/E family is compatible with all Arm tools and software.
Figure 3 shows the general block diagram of the STM32F446xC/E family.
Note: Cortex-M4 with FPU core is binary compatible with the Cortex-M3 core.

3.2 Adaptive real-time memory accelerator (ART Accelerator™)

The ART Accelerator is a memory accelerator optimized for STM32 industry-standard Arm®
Cortex®-M4 with FPU processors. It balances the inherent performance advantage of the
Arm® Cortex®-M4 with FPU over Flash memory technologies, which normally requires the
processor to wait for the Flash memory at higher frequencies.
To release the processor full 225 DMIPS performance at this frequency, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 128-bit Flash memory. Based on CoreMark® benchmark, the
performance achieved thanks to the ART Accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 180 MHz.

3.3 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into eight subareas. The protection area sizes are between 32 bytes and the whole
4 Gbytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

DS10693 Rev 10 17/198

38
Functional overview STM32F446xC/E

3.4 Embedded Flash memory

The devices embed a Flash memory of 512KB available for storing programs and data.

3.5 CRC (cyclic redundancy check) calculation unit

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code from a 32-bit
data word and a fixed generator polynomial.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a software
signature during runtime, to be compared with a reference signature generated at link-time
and stored at a given memory location.

3.6 Embedded SRAM

All devices embed:
 Up to 128 Kbytes of system SRAM
RAM is accessed (read/write) at CPU clock speed with 0 wait states.
 4 Kbytes of backup SRAM
This area is accessible only from the CPU. Its content is protected against possible
unwanted write accesses, and is retained in Standby or VBAT modes.

3.7 Multi-AHB bus matrix

The 32-bit multi-AHB bus matrix interconnects all the masters (CPU, DMAs, USB HS) and
the slaves Flash memory, RAM, QuadSPI, FMC, AHB and APB peripherals and ensures a
seamless and efficient operation even when several high-speed peripherals work
simultaneously.

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STM32F446xC/E Functional overview

Figure 4. STM32F446xC/E and Multi-AHB matrix

ARM GP GP USB OTG

Cortex-M4 DMA1 DMA2 HS

DMA_MEM1

DMA_MEM2

USB_HS_M
DMA_PI

DMA_P2
D-bus

S-bus
I-bus

S0 S1 S2 S3 S4 S5 S6
ICODE

ACCEL
Flash
DCODE memory

SRAM1
112 Kbyte
SRAM2
16 Kbyte
AHB2
peripherals
APB1
AHB1
peripherals
APB2
FMC external
MemCtl/QuadSPI
Bus matrix-S

MS33842V1

3.8 DMA controller (DMA)

The devices feature two general-purpose dual-port DMAs (DMA1 and DMA2) with 8
streams each. They are able to manage memory-to-memory, peripheral-to-memory and
memory-to-peripheral transfers. They feature dedicated FIFOs for APB/AHB peripherals,
support burst transfer and are designed to provide the maximum peripheral bandwidth
(AHB/APB).
The two DMA controllers support circular buffer management, so that no specific code is
needed when the controller reaches the end of the buffer. The two DMA controllers also
have a double buffering feature, which automates the use and switching of two memory
buffers without requiring any special code.
Each stream is connected to dedicated hardware DMA requests, with support for software
trigger on each stream. Configuration is made by software and transfer sizes between
source and destination are independent.

DS10693 Rev 10 19/198

38
Functional overview STM32F446xC/E

The DMA can be used with the main peripherals:

 SPI and I2S
 I2C
 USART
 General-purpose, basic and advanced-control timers TIMx
 DAC
 SDIO
 Camera interface (DCMI)
 ADC
 SAI1/SAI2
 SPDIF Receiver (SPDIFRx)
 QuadSPI

3.9 Flexible memory controller (FMC)

All devices embed an FMC. It has seven Chip Select outputs supporting the following
modes: SDRAM/LPSDR SDRAM, SRAM, PSRAM, NOR Flash and NAND Flash. With the
possibility to remap FMC bank 1 (NOR/PSRAM 1 and 2) and FMC SDRAM bank 1/2 in the
Cortex-M4 code area.
Functionality overview:
 8-,16-bit data bus width
 Read FIFO for SDRAM controller
 Write FIFO
 Maximum FMC_CLK/FMC_SDCLK frequency for synchronous accesses is 90 MHz.

LCD parallel interface

The FMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost-
effective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.

3.10 Quad SPI memory interface (QUADSPI)

All devices embed a Quad SPI memory interface, which is a specialized communication
interface targeting Single, Dual or Quad SPI Flash memories. It can work in direct mode
through registers, external Flash status register polling mode and memory mapped mode.
Up to 256 Mbytes external Flash are memory mapped, supporting 8, 16 and 32-bit access.
Code execution is supported. The opcode and the frame format are fully programmable.
Communication can be either in Single Data Rate or Dual Data Rate.

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3.11 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 91 maskable interrupt channels plus the 16 interrupt lines of the Cortex®-
M4 with FPU core.
 Closely coupled NVIC gives low-latency interrupt processing
 Interrupt entry vector table address passed directly to the core
 Early processing of interrupts
 Processing of late arriving, higher-priority interrupts
 Supports tail chaining
 Processor state automatically saved
 Interrupt entry restored on interrupt exit with no instruction overhead
This hardware block provides flexible interrupt management features with minimum interrupt
latency.

3.12 External interrupt/event controller (EXTI)

The external interrupt/event controller consists of 23 edge-detector lines used to generate
interrupt/event requests. Each line can be independently configured to select the trigger
event (rising edge, falling edge, both) and can be masked independently. A pending register
maintains the status of the interrupt requests. The EXTI can detect an external line with a
pulse width shorter than the Internal APB2 clock period. Up to 114 GPIOs can be connected
to the 16 external interrupt lines.

3.13 Clocks and startup

On reset the 16 MHz internal RC oscillator is selected as the default CPU clock. The 16
MHz internal RC oscillator is factory-trimmed to offer 1% accuracy at 25 °C. The application
can then select as system clock either the RC oscillator or an external 4-26 MHz clock
source. This clock can be monitored for failure. If a failure is detected, the system
automatically switches back to the internal RC oscillator and a software interrupt is
generated (if enabled). This clock source is input to a PLL thus allowing to increase the
frequency up to 180 MHz. Similarly, full interrupt management of the PLL clock entry is
available when necessary (for example if an indirectly used external oscillator fails).
Several prescalers allow the configuration of the two AHB buses, the high-speed APB
(APB2) and the low-speed APB (APB1) domains. The maximum frequency of the two AHB
buses is 180 MHz while the maximum frequency of the high-speed APB domains is
90 MHz. The maximum allowed frequency of the low-speed APB domain is 45 MHz.
The devices embed a dedicated PLL (PLLI2S) and PLLSAI, which makes it possible to
achieve audio class performance. In this case, the I2S master clock can generate all
standard sampling frequencies from 8 to 192 kHz.

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38
Functional overview STM32F446xC/E

3.14 Boot modes

At startup, boot pins are used to select one out of three boot options:
 Boot from user Flash
 Boot from system memory
 Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory
through a serial (UART, I2C, CAN, SPI and USB) communication interface. Refer to
application note AN2606 for details.

3.15 Power supply schemes

 VDD = 1.7 to 3.6 V: external power supply for I/Os and the internal regulator (when
enabled), provided externally through VDD pins.
 VSSA, VDDA = 1.7 to 3.6 V: external analog power supplies for ADC, DAC, Reset
blocks, RCs and PLL. VDDA and VSSA must be connected to VDD and VSS, respectively.
Note: VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply
supervisor (refer to Section 3.16.2). Refer to Table 3 to identify the packages supporting this
option.
 VBAT = 1.65 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
 VDDUSB can be connected either to VDD or an external independent power supply (3.0
to 3.6 V) for USB transceivers. 
For example, when device is powered at 1.8 V, an independent power supply 3.3 V can
be connected to VDDUSB. When the VDDUSB is connected to a separated power supply,
it is independent from VDD or VDDA but it must be the last supply to be provided and the
first to disappear. The following conditions must be respected:
– During power-on phase (VDD < VDD_MIN), VDDUSB must be always lower than VDD
– During power-down phase (VDD < VDD_MIN), VDDUSB must be always lower than
VDD
– VDDUSB rising and falling time rate specifications must be respected.
– In operating mode phase, VDDUSB can be lower or higher than VDD:
– If USB (USB OTG_HS/OTG_FS) is used, the associated GPIOs powered by
VDDUSB are operating between VDDUSB_MIN and VDDUSB_MAX.The VDDUSB
supplies both USB transceivers (USB OTG_HS and USB OTG_FS).
– If only one USB transceiver is used in the application, the GPIOs associated to
the other USB transceiver are still supplied by VDDUSB.
– If USB (USB OTG_HS/OTG_FS) is not used, the associated GPIOs powered
by VDDUSB are operating between VDD_MIN and VDD_MAX.

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STM32F446xC/E Functional overview

Figure 5. VDDUSB connected to an external independent power supply

VDDUSB_MAX
USB functional area
VDDUSB

VDDUSB_MIN
USB non USB non
functional VDD = VDDA functional
area area
VDD_MIN

Power-down time
Power-on Operating mode

MS37590V1

3.16 Power supply supervisor

3.16.1 Internal reset ON

On packages embedding the PDR_ON pin, the power supply supervisor is enabled by
holding PDR_ON high. On the other package, the power supply supervisor is always
enabled.
The device has an integrated power-on reset (POR)/ power-down reset (PDR) circuitry
coupled with a Brownout reset (BOR) circuitry. At power-on, POR/PDR is always active and
ensures proper operation starting from 1.8 V. After the 1.8 V POR threshold level is
reached, the option byte loading process starts, either to confirm or modify default BOR
thresholds, or to disable BOR permanently. Three BOR thresholds are available through
option bytes. The device remains in reset mode when VDD is below a specified threshold,
VPOR/PDR or VBOR, without the need for an external reset circuit.
The device also features an embedded programmable voltage detector (PVD) that monitors
the VDD/VDDA power supply and compares it to the VPVD threshold. An interrupt can be
generated when VDD/VDDA drops below the VPVD threshold and/or when VDD/VDDA is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.

3.16.2 Internal reset OFF

This feature is available only on packages featuring the PDR_ON pin. The internal power-on
reset (POR) / power-down reset (PDR) circuitry is disabled through the PDR_ON pin.
An external power supply supervisor should monitor VDD and maintain the device in reset
mode as long as VDD is below a specified threshold. PDR_ON must be connected to VSS, to
let the device operate down to 1.7 V. Refer to Figure 6.

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Figure 6. Power supply supervisor interconnection with internal reset OFF

VDD

STM32F446x
Application reset
VBAT
signal (optional)

PDR_ON

PDR not active: 1.7 V < VDD < 3.6 V

VSS MS33844V2

The VDD specified threshold, below which the device must be maintained under reset, is
1.7 V.
A comprehensive set of power-saving mode enables the design low-power applications.
When the internal reset is OFF, the following integrated features are no more supported:
 The integrated power-on reset (POR) / power-down reset (PDR) circuitry is disabled
 The brownout reset (BOR) circuitry must be disabled
 The embedded programmable voltage detector (PVD) is disabled
 VBAT functionality is no more available and VBAT pin should be connected to VDD.
All packages, except for the LQFP100/LQFP64, allow to disable the internal reset through
the PDR_ON signal.

3.17 Voltage regulator

The regulator has four operating modes:
 Regulator ON
– Main regulator mode (MR)
– Low power regulator (LPR)
– Power-down
 Regulator OFF

3.17.1 Regulator ON
On packages embedding the BYPASS_REG pin, the regulator is enabled by holding
BYPASS_REG low. On all other packages, the regulator is always enabled.
There are three power modes configured by software when the regulator is ON:
 MR mode used in Run/sleep modes or in Stop modes
– In Run/Sleep mode
The MR mode is used either in the normal mode (default mode) or the over-drive
mode (enabled by software). Different voltages scaling are provided to reach the
best compromise between maximum frequency and dynamic power consumption.

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The over-drive mode makes possible operating at a frequency higher than the
normal mode for a given voltage scaling.
– In Stop modes
The MR can be configured in two ways during stop mode:
MR operates in normal mode (default mode of MR in stop mode)
MR operates in under-drive mode (reduced leakage mode).
 LPR is used in the Stop modes:
The LP regulator mode is configured by software when entering Stop mode.
Like the MR mode, the LPR can be configured in two ways during stop mode:
– LPR operates in normal mode (default mode when LPR is ON)
– LPR operates in under-drive mode (reduced leakage mode).
 Power-down is used in Standby mode.
The Power-down mode is activated only when entering in Standby mode. The regulator
output is in high impedance and the kernel circuitry is powered down, inducing zero
consumption. The contents of the registers and SRAM are lost.
Refer to Table 3 for a summary of voltage regulator modes versus device operating modes.
Two external ceramic capacitors should be connected on VCAP_1 and VCAP_2 pin.
All packages have the regulator ON feature.

Table 3. Voltage regulator configuration mode versus device operating mode(1)

Voltage regulator
Run mode Sleep mode Stop mode Standby mode
configuration

Normal mode MR MR MR or LPR -

Over-drive
MR MR - -
mode(2)
Under-drive mode - - MR or LPR -
Power-down
- - - Yes
mode
1. ‘-’ means that the corresponding configuration is not available.
2. The over-drive mode is not available when VDD = 1.7 to 2.1 V.

3.17.2 Regulator OFF

This feature is available only on packages featuring the BYPASS_REG pin. The regulator is
disabled by holding BYPASS_REG high. The regulator OFF mode enables to supply
externally a V12 voltage source through VCAP_1 and VCAP_2 pins.
Since the internal voltage scaling is not managed internally, the external voltage value must
be aligned with the targeted maximum frequency. The two 2.2 µF ceramic capacitors should
be replaced by two 100 nF decoupling capacitors.
When the regulator is OFF, there is no more internal monitoring on V12. An external power
supply supervisor should be used to monitor the V12 of the logic power domain. PA0 pin
should be used for this purpose, and act as power-on reset on V12 power domain.

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In regulator OFF mode, the following features are no more supported:

 PA0 cannot be used as a GPIO pin since it resets a part of the V12 logic power domain
not reset by the NRST pin.
 As long as PA0 is kept low, the debug mode cannot be used under power-on reset. As
a consequence, PA0 and NRST pins must be managed separately if the debug
connection under reset or pre-reset is required.
 The over-drive and under-drive modes are not available.

Figure 7. Regulator OFF

V12
External VCAP_1/2 power
supply supervisor Application reset
Ext. reset controller active signal (optional)
when VCAP_1/2 < Min V12

VDD
PA0 NRST
VDD

BYPASS_REG
V12

VCAP_1

VCAP_2
ai18498V3

The following conditions must be respected:

 VDD should always be higher than VCAP_1 and VCAP_2 to avoid current injection
between power domains.
 If the time for VCAP_1 and VCAP_2 to reach V12 minimum value is faster than the time for
VDD to reach 1.7 V, then PA0 should be kept low to cover both conditions: until VCAP_1
and VCAP_2 reach V12 minimum value and until VDD reaches 1.7 V (see Figure 8).
 Otherwise, if the time for VCAP_1 and VCAP_2 to reach V12 minimum value is slower
than the time for VDD to reach 1.7 V, then PA0 could be asserted low externally (see
Figure 9).
 If VCAP_1 and VCAP_2 go below V12 minimum value and VDD is higher than 1.7 V, then a
reset must be asserted on PA0 pin.
Note: The minimum value of V12 depends on the maximum frequency targeted in the application.

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Figure 8. Startup in regulator OFF: slow VDD slope

power-down reset risen after VCAP_1 / VCAP_2 stabilization

VDD

PDR = 1.7 V or 1.8 V VCAP_1 / VCAP_2

V12
Min V12

time

NRST

time
ai18491f

1. This figure is valid whatever the internal reset mode (ON or OFF).

Figure 9. Startup in regulator OFF mode: fast VDD slope

power-down reset risen before VCAP_1 / VCAP_2 stabilization

VDD

PDR = 1.7 V or 1.8 V

VCAP_1 / VCAP_2
V12
Min V12

time
NRST
PA0 asserted externally

time
ai18492e

1. This figure is valid whatever the internal reset mode (ON or OFF).

3.17.3 Regulator ON/OFF and internal reset ON/OFF availability

Table 4. Regulator ON/OFF and internal reset ON/OFF availability

Package Regulator ON Regulator OFF Internal reset ON Internal reset OFF

LQFP64 / LQFP100 Yes No Yes No

LQFP144 Yes No
Yes Yes
UFBGA144 Yes Yes PDR_ON PDR_ON
BYPASS_REG BYPASS_REG set to VDD set to Vss
WLCSP81 set to Vss set to VDD

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3.18 Real-time clock (RTC), backup SRAM and backup registers

The backup domain includes:
 The real-time clock (RTC)
 4 Kbytes of backup SRAM
 20 backup registers
The real-time clock (RTC) is an independent BCD timer/counter. Dedicated registers contain
the second, minute, hour (in 12/24 hour), week day, date, month, year, in BCD (binary-
coded decimal) format. Correction for 28, 29 (leap year), 30, and 31 day of the month are
performed automatically. The RTC provides a programmable alarm and programmable
periodic interrupts with wakeup from Stop and Standby modes. The sub-seconds value is
also available in binary format.
It is clocked by a 32.768 kHz external crystal, resonator or oscillator, the internal low-power
RC oscillator or the high-speed external clock divided by 128. The internal low-speed RC
has a typical frequency of 32 kHz. The RTC can be calibrated using an external 512 Hz
output to compensate for any natural quartz deviation.
Two alarm registers are used to generate an alarm at a specific time and calendar fields can
be independently masked for alarm comparison. To generate a periodic interrupt, a 16-bit
programmable binary auto-reload downcounter with programmable resolution is available
and enables automatic wakeup and periodic alarms from every 120 µs to every 36 hours.
A 20-bit prescaler is used for the time base clock. It is by default configured to generate a
time base of 1 second from a clock at 32.768 kHz.
The 4-Kbyte backup SRAM is an EEPROM-like memory area. It can be used to store data
which need to be retained in VBAT and standby mode. This memory area is disabled by
default to minimize power consumption (see Section 3.19). It can be enabled by software.
The backup registers are 32-bit registers used to store 80 bytes of user application data
when VDD power is not present. Backup registers are not reset by a system, a power reset,
or when the device wakes up from the Standby mode (see Section 3.19).
Additional 32-bit registers contain the programmable alarm subseconds, seconds, minutes,
hours, day, and date.
Like backup SRAM, the RTC and backup registers are supplied through a switch that is
powered either from the VDD supply when present or from the VBAT pin.

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3.19 Low-power modes

The devices support three low-power modes to achieve the best compromise between low
power consumption, short startup time and available wakeup sources:
 Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
 Stop mode
The Stop mode achieves the lowest power consumption while retaining the contents of
SRAM and registers. All clocks in the 1.2 V domain are stopped, the PLL, the HSI RC
and the HSE crystal oscillators are disabled.
The voltage regulator can be put either in main regulator mode (MR) or in low-power
mode (LPR). Both modes can be configured as follows (see Table 5):
– Normal mode (default mode when MR or LPR is enabled)
– Under-drive mode.
The device can be woken up from the Stop mode by any of the EXTI line (the EXTI line
source can be one of the 16 external lines, the PVD output, the RTC alarm / wakeup /
tamper / time stamp events, the USB OTG FS/HS wakeup).

Table 5. Voltage regulator modes in stop mode

Voltage regulator configuration Main regulator (MR) Low-power regulator (LPR)

Normal mode MR ON LPR ON

Under-drive mode MR in under-drive mode LPR in under-drive mode

 Standby mode
The Standby mode is used to achieve the lowest power consumption. The internal
voltage regulator is switched off so that the entire 1.2 V domain is powered off. The
PLL, the HSI RC and the HSE crystal oscillators are also switched off. After entering
Standby mode, the SRAM and register contents are lost except for registers in the
backup domain and the backup SRAM when selected.
The device exits the Standby mode when an external reset (NRST pin), an IWDG reset,
a rising edge on the WKUP pin, or an RTC alarm / wakeup / tamper /time stamp event
occurs.
The standby mode is not supported when the embedded voltage regulator is bypassed
and the 1.2 V domain is controlled by an external power.

3.20 VBAT operation

The VBAT pin makes it possible to power the device VBAT domain from an external battery,
an external supercapacitor, or from VDD when no external battery and an external
supercapacitor are present.
VBAT operation is activated when VDD is not present.
The VBAT pin supplies the RTC, the backup registers and the backup SRAM.

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Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
When PDR_ON pin is not connected to VDD (Internal Reset OFF), the VBAT functionality is
no more available and VBAT pin has to be connected to VDD.

3.21 Timers and watchdogs

The devices include two advanced-control timers, eight general-purpose timers, two basic
timers and two watchdog timers.
All timer counters can be frozen in debug mode.
Table 6 compares the features of the advanced-control, general-purpose and basic timers.

Table 6. Timer feature comparison

Max Max
DMA Capture/
Timer Counter Counter Prescaler Complementary interface timer
Timer request compare
type resolution type factor output clock clock
generation channels
(MHz) (MHz)(1)

Up, Any integer

Advanced- TIM1,
16-bit Down, between 1 Yes 4 Yes 90 180
control TIM8
Up/down and 65536

Up, Any integer

TIM2,
32-bit Down, between 1 Yes 4 No 45 90/180
TIM5
Up/down and 65536

Up, Any integer

TIM3,
16-bit Down, between 1 Yes 4 No 45 90/180
TIM4
Up/down and 65536

Any integer
TIM9 16-bit Up between 1 No 2 No 90 180
General and 65536
purpose Any integer
TIM10,
16-bit Up between 1 No 1 No 90 180
TIM11
and 65536

Any integer
TIM12 16-bit Up between 1 No 2 No 45 90/180
and 65536

Any integer
TIM13,
16-bit Up between 1 No 1 No 45 90/180
TIM14
and 65536

Any integer
TIM6,
Basic 16-bit Up between 1 Yes 0 No 45 90/180
TIM7
and 65536

1. The maximum timer clock is either 90 or 180 MHz depending on TIMPRE bit configuration in the RCC_DCKCFGR register.

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3.21.1 Advanced-control timers (TIM1, TIM8)

The advanced-control timers (TIM1, TIM8) can be seen as three-phase PWM generators
multiplexed on 6 channels. They have complementary PWM outputs with programmable
inserted dead times. They can also be considered as complete general-purpose timers.
Their 4 independent channels can be used for:
 Input capture
 Output compare
 PWM generation (edge- or center-aligned modes)
 One-pulse mode output
If configured as standard 16-bit timers, they have the same features as the general-purpose
TIMx timers. If configured as 16-bit PWM generators, they have full modulation capability (0-
100%).
The advanced-control timer can work together with the TIMx timers via the Timer Link
feature for synchronization or event chaining.
TIM1 and TIM8 support independent DMA request generation.

3.21.2 General-purpose timers (TIMx)

There are ten synchronized general-purpose timers embedded in the STM32F446xC/E
devices (see Table 6 for differences).
 TIM2, TIM3, TIM4, TIM5
The STM32F446xC/E include four full-featured general-purpose timers: TIM2, TIM5,
TIM3, and TIM4.The TIM2 and TIM5 timers are based on a 32-bit auto-reload
up/downcounter and a 16-bit prescaler. The TIM3 and TIM4 timers are based on a 16-
bit auto-reload up/downcounter and a 16-bit prescaler. They all feature 4 independent
channels for input capture/output compare, PWM or one-pulse mode output. This gives
up to 16 input capture/output compare/PWMs on the largest packages.
The TIM2, TIM3, TIM4, TIM5 general-purpose timers can work together, or with the
other general-purpose timers and the advanced-control timers TIM1 and TIM8 via the
Timer Link feature for synchronization or event chaining.
Any of these general-purpose timers can be used to generate PWM outputs.
TIM2, TIM3, TIM4, TIM5 all have independent DMA request generation. They are
capable of handling quadrature (incremental) encoder signals and the digital outputs
from one to four Hall-effect sensors.
 TIM9, TIM10, TIM11, TIM12, TIM13, and TIM14
These timers are based on a 16-bit auto-reload upcounter and a 16-bit prescaler.
TIM10, TIM11, TIM13, and TIM14 feature one independent channel, whereas TIM9
and TIM12 have two independent channels for input capture/output compare, PWM or
one-pulse mode output. They can be synchronized with the TIM2, TIM3, TIM4, TIM5
full-featured general-purpose timers. They can also be used as simple time bases.

3.21.3 Basic timers TIM6 and TIM7

These timers are mainly used for DAC trigger and waveform generation. They can also be
used as a generic 16-bit time base.
TIM6 and TIM7 support independent DMA request generation.

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3.21.4 Independent watchdog

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC and as it operates independently from the
main clock, it can operate in Stop and Standby modes. It can be used either as a watchdog
to reset the device when a problem occurs, or as a free-running timer for application timeout
management. It is hardware- or software-configurable through the option bytes.

3.21.5 Window watchdog

The window watchdog is based on a 7-bit downcounter that can be set as free-running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.

3.21.6 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard
downcounter. It features:
 A 24-bit downcounter
 Autoreload capability
 Maskable system interrupt generation when the counter reaches 0
 Programmable clock source.

3.22 Inter-integrated circuit interface (I2C)

Four I²C bus interfaces can operate in multimaster and slave modes. Three I²C can support
the standard (up to 100 KHz) and fast (up to 400 KHz) modes.
One I²C can support the standard (up to 100 KHz), fast (up to 400 KHz) and fast mode plus
(up to 1MHz) modes.
They (all I²C) support the 7/10-bit addressing mode and the 7-bit dual addressing mode (as
slave).
A hardware CRC generation/verification is embedded.
They can be served by DMA and they support SMBus 2.0 / PMBus.
The devices also include programmable analog and digital noise filters (see Table 7).

Table 7. Comparison of I2C analog and digital filters

- Analog filter Digital filter

Pulse width of suppressed spikes  50 ns Programmable length from 1 to 15 I2C peripheral clocks

3.23 Universal synchronous/asynchronous receiver transmitters

(USART)
The devices embed four universal synchronous/asynchronous receiver transmitters
(USART1, USART2, USART3 and USART6) and four universal asynchronous receiver
transmitters (UART4, and UART5).

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These six interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. The USART1 and USART6 interfaces are able to
communicate at speeds of up to 11.25 Mbit/s. The other available interfaces communicate
at up to 5.62 bit/s.
USART1, USART2, USART3 and USART6 also provide hardware management of the CTS
and RTS signals, Smart Card mode (ISO 7816 compliant) and SPI-like communication
capability. All interfaces can be served by the DMA controller.

Table 8. USART feature comparison(1)

Max. baud rate in Mbit/s
USART Standard Modem SPI Smartcard APB
LIN irDA
name features (RTS/CTS) master (ISO 7816) Oversampling Oversampling mapping
by 16 by 8

APB2 (max.
USART1 X X X X X X 5.62 11.25
90 MHz)
USART2 X X X X X X 2.81 5.62
USART3 X X X X X X 2.81 5.62 APB1 (max.
UART4 X X X - X - 2.81 5.62 45 MHz)

UART5 X X X - X - 2.81 5.62

APB2 (max.
USART6 X X X X X X 5.62 11.25
90 MHz)
1. X = feature supported.

3.24 Serial peripheral interface (SPI)

The devices feature up to four SPIs in slave and master modes in full-duplex and simplex
communication modes. SPI1, and SPI4 can communicate at up to 45 Mbits/s, SPI2 and
SPI3 can communicate at up to 22.5 Mbit/s. The 3-bit prescaler gives eight master mode
frequencies and the frame is configurable to 8- or 16-bit. The hardware CRC
generation/verification supports basic SD Card/MMC modes. All SPIs can be served by the
DMA controller.
The SPI interface can be configured to operate in TI mode for communications in master
mode and slave mode.

3.25 HDMI (high-definition multimedia interface) consumer

electronics control (CEC)
The devices embed a HDMI-CEC controller that provides hardware support of consumer
electronics control (CEC) (Appendix supplement 1 to the HDMI standard).
This protocol provides high-level control functions between all audiovisual products in an
environment. It is specified to operate at low speeds with minimum processing and memory
overhead.

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3.26 Inter-integrated sound (I2S)

Three standard I2S interfaces (multiplexed with SPI1, SPI2 and SPI3) are available. They
can be operated in master or slave mode, in simplex communication modes, and can be
configured to operate with a 16-/32-bit resolution as an input or output channel. Audio
sampling frequencies from 8 kHz up to 192 kHz are supported. When either or both of the
I2S interfaces is/are configured in master mode, the master clock can be output to the
external DAC/CODEC at 256 times the sampling frequency.
All I2Sx can be served by the DMA controller.

3.27 SPDIF-RX Receiver Interface (SPDIFRX)

The SPDIF-RX peripheral, is designed to receive an S/PDIF flow compliant with IEC-60958
and IEC-61937. These standards support simple stereo streams up to high sample rate,
and compressed multi-channel surround sound, such as those defined by Dolby or DTS (up
to 5.1).
The main features of the SPDIF-RX are the following:
 Up to 4 inputs available
 Automatic symbol rate detection
 Maximum symbol rate: 12.288 MHz
 Stereo stream from 32 to 192 kHz supported
 Supports Audio IEC-60958 and IEC-61937, consumer applications
 Parity bit management
 Communication using DMA for audio samples
 Communication using DMA for control and user channel information
 Interrupt capabilities
The SPDIF-RX receiver provides all the necessary features to detect the symbol rate, and
decode the incoming data stream.
The user can select the wanted SPDIF input, and when a valid signal is available the
SPDIF-RX re-samples the incoming signal, decodes the Manchester stream, recognizes
frames, sub-frames and blocks elements. It delivers to the CPU decoded data, and
associated status flags.
The SPDIF-RX also offers a signal named spdifrx_frame_sync, which toggles at the S/PDIF
sub-frame rate used to compute the exact sample rate for clock drift algorithms.

3.28 Serial audio interface (SAI)

The devices feature two serial audio interfaces (SAI1 and SAI2). Each serial audio
interfaces based on two independent audio sub blocks which can operate as transmitter or
receiver with their FIFO. Many audio protocols are supported by each block: I2S standards,
LSB or MSB-justified, PCM/DSP, TDM, AC’97 and SPDIF output, supporting audio sampling
frequencies from 8 kHz up to 192 kHz. Both sub blocks can be configured in master or in
slave mode. The SAIs use a PLL to achieve audio class accuracy.
In master mode, the master clock can be output to the external DAC/CODEC at 256 times of
the sampling frequency.

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The two sub blocks can be configured in synchronous mode when full-duplex mode is
required.
SAI1 and SA2 can be served by the DMA controller.

3.29 Audio PLL (PLLI2S)

The devices feature an additional dedicated PLL for audio I2S and SAI applications, to
achieve error-free I2S sampling clock accuracy without compromising on the CPU
performance, while using USB peripherals.
The PLLI2S configuration can be modified to manage an I2S/SAI sample rate change
without disabling the main PLL (PLL) used for CPU, USB and Ethernet interfaces.
The audio PLL can be programmed with very low error to obtain sampling rates ranging
from 8 KHz to 192 KHz.
In addition to the audio PLL, a master clock input pin can be used to synchronize the
I2S/SAI flow with an external PLL (or Codec output).

3.30 Serial audio interface PLL (PLLSAI)

An additional PLL dedicated to audio and USB is used for SAI1 and SAI2 peripheral in case
the PLLI2S is programmed to achieve another audio sampling frequency (49.152 MHz or
11.2896 MHz) and the audio application requires both sampling frequencies simultaneously.
The PLLSAI is also used to generate the 48 MHz clock for USB FS and SDIO in case the
system PLL is programmed with factors not multiple of 48 MHz.

3.31 Secure digital input/output interface (SDIO)

An SD/SDIO/MMC host interface is available, that supports MultiMediaCard System
Specification Version 4.2 in three different databus modes: 1-bit (default), 4-bit and 8-bit.
The interface enables data transfer at up to 48 MHz, and is compliant with the SD Memory
Card Specification Version 2.0.
The SDIO Card Specification Version 2.0 is also supported with two different databus
modes: 1-bit (default) and 4-bit.
The current version supports only one SD/SDIO/MMC4.2 card at any one time and a stack
of MMC4.1 or previous.

3.32 Controller area network (bxCAN)

The two CANs are compliant with the 2.0A and B (active) specifications with a bitrate up to 1
Mbit/s. They can receive and transmit standard frames with 11-bit identifiers as well as
extended frames with 29-bit identifiers. Each CAN has three transmit mailboxes, two receive
FIFOS with 3 stages and 28 shared scalable filter banks (all of them can be used even if one
CAN is used). 256 bytes of SRAM are allocated for each CAN.

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3.33 Universal serial bus on-the-go full-speed (OTG_FS)

The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated
transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and
with the OTG 1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator. The USB has dedicated power
rails allowing its use throughout the entire power range. The major features are:
 Combined Rx and Tx FIFO size of 320 × 35 bits with dynamic FIFO sizing
 Supports the session request protocol (SRP) and host negotiation protocol (HNP)
 6 bidirectional endpoints
 12 host channels with periodic OUT support
 HNP/SNP/IP inside (no need for any external resistor)
 For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected

3.34 Universal serial bus on-the-go high-speed (OTG_HS)

The devices embed a USB OTG high-speed (up to 480 Mb/s) device/host/OTG peripheral.
The USB OTG HS supports both full-speed and high-speed operations. It integrates the
transceivers for full-speed operation (12 MB/s) and features a UTMI low-pin interface (ULPI)
for high-speed operation (480 MB/s). When using the USB OTG HS in HS mode, an
external PHY device connected to the ULPI is required.
The USB OTG HS peripheral is compliant with the USB 2.0 specification and with the OTG
1.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG full-speed controller requires a dedicated 48 MHz clock
that is generated by a PLL connected to the HSE oscillator. The USB has dedicated power
rails allowing its use throughout the entire power range.
The major features are:
 Combined Rx and Tx FIFO size of 1 Kbit × 35 with dynamic FIFO sizing
 Supports the session request protocol (SRP) and host negotiation protocol (HNP)
 8 bidirectional endpoints
 16 host channels with periodic OUT support
 Internal FS OTG PHY support
 External HS or HS OTG operation supporting ULPI in SDR mode. The OTG PHY is
connected to the microcontroller ULPI port through 12 signals. It can be clocked using
the 60 MHz output.
 Internal USB DMA
 HNP/SNP/IP inside (no need for any external resistor)
 for OTG/Host modes, a power switch is needed in case bus-powered devices are
connected

36/198 DS10693 Rev 10

STM32F446xC/E Functional overview

3.35 Digital camera interface (DCMI)

The devices embed a camera interface that can connect with camera modules and CMOS
sensors through an 8-bit to 14-bit parallel interface, to receive video data. The camera
interface can sustain a data transfer rate up to 94.5 Mbyte/s (in 14-bit mode) at 54 MHz.
Its features:
 Programmable polarity for the input pixel clock and synchronization signals
 Parallel data communication can be 8-, 10-, 12- or 14-bit
 Supports 8-bit progressive video monochrome or raw bayer format, YCbCr 4:2:2
progressive video, RGB 565 progressive video or compressed data (like JPEG)
 Supports continuous mode or snapshot (a single frame) mode
 Capability to automatically crop the image black and white.

3.36 General-purpose input/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain,
with or without pull-up or pull-down), as input (floating, with or without pull-up or pull-down)
or as peripheral alternate function. Most of the GPIO pins are shared with digital or analog
alternate functions. All GPIOs are high-current-capable and have speed selection to better
manage internal noise, power consumption and electromagnetic emission.
The I/O configuration can be locked if needed by following a specific sequence in order to
avoid spurious writing to the I/Os registers.
Fast I/O handling allowing maximum I/O toggling up to 90 MHz.

3.37 Analog-to-digital converters (ADCs)

Three 12-bit analog-to-digital converters are embedded and each ADC shares up to 16
external channels, performing conversions in the single-shot or scan mode. In scan mode,
automatic conversion is performed on a selected group of analog inputs.
Additional logic functions embedded in the ADC interface allow:
 Simultaneous sample and hold
 Interleaved sample and hold
The ADC can be served by the DMA controller. An analog watchdog feature makes possible
a very precise monitoring of the converted voltage of one, some or all selected channels. An
interrupt is generated when the converted voltage is outside the programmed thresholds.
To synchronize A/D conversion and timers, the ADCs could be triggered by any of TIM1,
TIM2, TIM3, TIM4, TIM5, or TIM8 timer.

3.38 Temperature sensor

The temperature sensor has to generate a voltage that varies linearly with temperature. The
conversion range is between 1.7 V and 3.6 V. The temperature sensor is internally
connected to the same input channel as VBAT, ADC1_IN18, which is used to convert the
sensor output voltage into a digital value. When the temperature sensor and VBAT
conversion are enabled at the same time, only VBAT conversion is performed.

DS10693 Rev 10 37/198

38
Functional overview STM32F446xC/E

As the offset of the temperature sensor varies from chip to chip due to process variation, the
internal temperature sensor is mainly suitable for applications that detect temperature
changes instead of absolute temperatures. If an accurate temperature reading is needed,
then an external temperature sensor part should be used.

3.39 Digital-to-analog converter (DAC)

The two 12-bit buffered DAC channels can be used to convert two digital signals into two
analog voltage signal outputs.
This dual digital Interface supports the following features:
 two DAC converters: one for each output channel
 8-bit or 10-bit monotonic output
 left or right data alignment in 12-bit mode
 synchronized update capability
 noise-wave generation
 triangular-wave generation
 dual DAC channel independent or simultaneous conversions
 DMA capability for each channel
 external triggers for conversion
 input voltage reference VREF+
Eight DAC trigger inputs are used in the device. The DAC channels are triggered through
the timer update outputs that are also connected to different DMA streams.

3.40 Serial wire JTAG debug port (SWJ-DP)

The Arm SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.

3.41 Embedded Trace Macrocell™

The Arm Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32F446xx through a small number of ETM pins to an external hardware trace port
analyser (TPA) device. The TPA is connected to a host computer using USB, Ethernet, or
any other high-speed channel. Real-time instruction and data flow activity can be recorded
and then formatted for display on the host computer that runs the debugger software. TPA
hardware is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.

38/198 DS10693 Rev 10

STM32F446xC/E Pinout and pin description

4 Pinout and pin description

Figure 10. STM32F446xC/xE LQFP64 pinout

BOOT0

PC12

PC10
PC11

PA15
PA14
VDD
VSS

PD2
PB9
PB8

PB7
PB6
PB5
PB4
PB3
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49
VBAT 1 48 VDD
PC13 2 47 VSS
PC14-OSC32_IN 3 46 PA13
PC15-OSC32_OUT 4 45 PA12
PH0-OSC_IN 5 44 PA11
PH1-OSC_OUT 6 43 PA10
NRST 7 42 PA9
PC0 8 41 PA8
LQFP64
PC1 9 40 PC9
PC2 10 39 PC8
PC3 11 38 PC7
VSSA/VREF- 12 37 PC6
VDDA/VREF+ 13 36 PB15
PA0 14 35 PB14
PA1 15 34 PB13
PA2 16 33 PB12
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
VSS
VDD

PC4
PC5
PB0
PB1
PB2
PB10
VCAP_1
VSS
VDD
PA3

PA4
PA5
PA6
PA7

MS31149V3

1. The above figure shows the package top view.

DS10693 Rev 10 39/198

64
Pinout and pin description STM32F446xC/E

Figure 11. STM32F446xC/xE LQFP100 pinout

BOOT0

PC12

PC10
PC11

PA15
PA14
VDD
VSS

PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3
100
99

97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
98
PE2 1 75 VDD
PE3 2 74 VSS
PE4 3 73 VCAP_2
PE5 4 72 PA13
PE6 5 71 PA12
VBAT 6 70 PA11
PC13 7 69 PA10
PC14-OSC32_IN 8 68 PA9
PC15-OSC32_OUT 9 67 PA8
VSS 10 66 PC9
VDD 11 65 PC8
PH0-OSC_IN 12 64 PC7
PH1-OSC_OUT 13 LQFP100 63 PC6
NRST 14 62 PD15
PC0 15 61 PD14
PC1 16 60 PD13
PC2 17 59 PD12
PC3 18 58 PD11
VDD 19 57 PD10
VSSA/VREF- 20 56 PD9
VREF+ 21 55 PD8
VDDA 22 54 PB15
PA0 23 53 PB14
PA1 24 52 PB13
PA2 25 51 PB12
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50 VDD
PA3

PA4
PA5
PA6
PA7
PC4
PC5

PE10

PE12
PE13
PE14
PE15
PB10
VCAP_1
PB0
PB1
PB2
PE7
PE8
PE9
VSS
VDD

PE11

VSS
MS31151V4

1. The above figure shows the package top view.

40/198 DS10693 Rev 10

STM32F446xC/E Pinout and pin description

Figure 12. STM32F446xC LQFP144 pinout

PDR_ON

BOO T0

PG15

PG14
PG13
PG12
PG11
PG10

PC12
PC11
PC10
PA 15
PA 14
V DD

V DD

V DD
PG9
PD7
PD6

PD5
PD4
PD3
PD2
PD1
PD0
V SS

V SS
PE 1
PE 0
PB 9
PB 8

PB 7
PB 6
PB 5
PB 4
PB 3
144
143
142
141
140
139
138
137
136
135
134
133
132
131
130
129
128
127
126
125
124
123
122
121

109
120
119
118
117
116
115
114
113
112

110
111
PE 2 1 108 V DD
PE 3 2 107 V SS
PE 4 3 106 V CAP_2
PE 5 4 105 PA 13
PE 6 5 104 PA 12
VBAT 6 103 PA 11
PC13 7 102 PA 10
PC14 8 101 PA 9
PC15 9 100 PA 8
PF0 10 99 PC9
PF1 11 98 PC8
PF2 12 97 PC7
PF3 13 96 PC6
PF4 14 95 V DDUSB
PF5 15 94 V SS
V SS 16 93 PG8
V DD 17 92 PG7
PF6 18 91 PG6
PF7 19 LQFP144 90 PG5
PF8 20 89 PG4
PF9 21 88 PG3
PF10 22 87 PG2
PH0 23 86 PD15
PH1 24 85 PD14
NR ST 25 84 V DD
PC0 26 83 V SS
PC1 27 82 PD13
PC2 28 81 PD12
PC3 29 80 PD11
V DD 30 79 PD10
V SSA 31 78 PD9
V REF+ 32 77 PD8
V DDA 33 76 PB 15
PA 0 34 75 PB 14
PA 1 35 74 PB 13
PA 2 36 73 PB 12
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60

72
61
62
63
64
65
66
67
68
69
70
71
V DD
V SS

V CAP_1
V DD

V DD

V DD
V SS
V SS
PA 3

PA 4
PA 5
PA 6
PA 7
PC4
PC5
PB 0
PB 1
PB 2
PF11
PF12

PF13
PF14
PF15
PG0
PG1
PE 7
PE 8
PE 9

PE 10
PE 11
PE 12
PE 13
PE 14
PE 15
PB 10
PB 11

ai18496c

1. The above figure shows the package top view.

DS10693 Rev 10 41/198

64
Pinout and pin description STM32F446xC/E

Figure 13. STM32F446xC/xE WLCSP81 ballout

1 2 3 4 5 6 7 8 9

A VDD PC12 PD4 PD7 PB3 PB5 BOOT0 VDD PE4

PDR_
B VSS PA15 PD0 PD6 PB4 PB7 VSS VBAT
ON

C PA11 VCAP_2 PA14 PD1 PB6 PB8 PB9 PC13 PC14

D PC9 PA13 PC10 PC11 PD2 PE3 PE2 NRESET PC15

VDD
E PA8 PA10 PA12 PA7 PA3 PA2 PC2 PH0
USB

F PC6 PC7 PC8 PA9 PB0 PA5 VSSA PC3 PH1

G PD13 PD12 PB15 PB12 PE9 PA6 PA1 VSS PC0

H PD11 PB13 VSS PB10 PE8 PB1 PA4 VDDA VDD

BYPASS_
J PB14 VDD VCAP_1 PE10 PE7 PB2 PC4 PA0
REG

MSv33518V2

1. The above figure shows the package top view.

42/198 DS10693 Rev 10

STM32F446xC/E Pinout and pin description

Figure 14. STM32F446xC/xE UFBGA144 ballout

1 2 3 4 5 6 7 8 9 10 11 12

A PC13 PE3 PE2 PE1 PE0 PB4 PB3 PD6 PD7 PA15 PA14 PA13

B PC14 PE4 PE5 PE6 PB9 PB5 PG15 PG12 PD5 PC11 PC10 PAI2

VDD
C PC15 VBAT PF0 PF1 PB8 PB6 PG14 PG11 PD4 PC12 PA11
USB

D PH0 VSS VDD PF2 BOOT0 PB7 PG13 PG10 PD3 PD1 PA10 PA9

PDR_
E PH1 PF3 PF4 PF5
ON
VSS VSS PG9 PD2 PD0 PC9 PA8

F NRST PF7 PF6 VDD VDD VDD VDD VDD VDD VDD PC8 PC7

G PF10 PF9 PF8 VSS VDD VDD VDD VSS VCAP_2 VSS PG8 PC6

BYPASS
H PC0 PC1 PC2 PC3
_REG
VSS VCAP_1 PE11 PD11 PG7 PG6 PG5

J VSSA PA0 PA4 PC4 PB2 PG1 PE10 PE12 PD10 PG4 PG3 PG2

K VREF- PA1 PA5 PC5 PF13 PG0 PE9 PE13 PD9 PD13 PD14 PD15

L VREF+ PA2 PA6 PB0 PF12 PF15 PE8 PE14 PD8 PD12 PB14 PB15

M VDDA PA3 PA7 PB1 PF11 PF14 PE7 PE15 PB10 PB11 PB12 PB13

MSv36519V2

1. The above picture shows the package top view.

DS10693 Rev 10 43/198

64
Pinout and pin description STM32F446xC/E

Table 9. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function during and after
Pin name
reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
FTf 5V tolerant IO, I2C FM+ option
I/O structure TTa 3.3 V tolerant I/O directly connected to ADC
B Dedicated BOOT0 pin
RST Bidirectional reset pin with weak pull-up resistor

Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset

Alternate
Functions selected through GPIOx_AFR registers
functions

Additional
Functions directly selected/enabled through peripheral registers
functions

Table 10. STM32F446xx pin and ball descriptions

Pin number
I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

TRACECLK, SPI4_SCK,
SAI1_MCLK_A,
- 1 D7 A3 1 PE2 I/O FT - -
QUADSPI_BK1_IO2,
FMC_A23, EVENTOUT
TRACED0, SAI1_SD_B,
- 2 D6 A2 2 PE3 I/O FT - -
FMC_A19, EVENTOUT
TRACED1, SPI4_NSS,
- 3 A9 B2 3 PE4 I/O FT - SAI1_FS_A, FMC_A20, -
DCMI_D4, EVENTOUT
TRACED2, TIM9_CH1,
SPI4_MISO, SAI1_SCK_A,
- 4 - B3 4 PE5 I/O FT - -
FMC_A21, DCMI_D6,
EVENTOUT

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STM32F446xC/E Pinout and pin description

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

TRACED3, TIM9_CH2,
SPI4_MOSI, SAI1_SD_A,
- 5 - B4 5 PE6 I/O FT - -
FMC_A22, DCMI_D7,
EVENTOUT
1 6 B9 C2 6 VBAT S - - - -
2 7 C8 A1 7 PC13 I/O FT - EVENTOUT TAMP_1/WKUP1
PC14-
3 8 C9 B1 8 I/O FT - EVENTOUT OSC32_IN
OSC32_IN(PC14)
PC15-
4 9 D9 C1 9 I/O FT - EVENTOUT OSC32_OUT
OSC32_OUT(PC15)
I2C2_SDA, FMC_A0,
- - - C3 10 PF0 I/O FT - -
EVENTOUT
I2C2_SCL, FMC_A1,
- - - C4 11 PF1 I/O FT - -
EVENTOUT
I2C2_SMBA, FMC_A2,
- - - D4 12 PF2 I/O FT - -
EVENTOUT
- - - E2 13 PF3 I/O FT - FMC_A3, EVENTOUT ADC3_IN9
- - - E3 14 PF4 I/O FT - FMC_A4, EVENTOUT ADC3_IN14
- - - E4 15 PF5 I/O FT - FMC_A5, EVENTOUT ADC3_IN15
- 10 - D2 16 VSS S - - - -
- 11 - D3 17 VDD S - - - -
TIM10_CH1, SAI1_SD_B,
- - - F3 18 PF6 I/O FT - QUADSPI_BK1_IO3, ADC3_IN4
EVENTOUT
TIM11_CH1,
SAI1_MCLK_B,
- - - F2 19 PF7 I/O FT - ADC3_IN5
QUADSPI_BK1_IO2,
EVENTOUT
SAI1_SCK_B, TIM13_CH1,
- - - G3 20 PF8 I/O FT - QUADSPI_BK1_IO0, ADC3_IN6
EVENTOUT
SAI1_FS_B, TIM14_CH1,
- - - G2 21 PF9 I/O FT - QUADSPI_BK1_IO1, ADC3_IN7
EVENTOUT
- - - G1 22 PF10 I/O FT - DCMI_D11, EVENTOUT ADC3_IN8
5 12 E9 D1 23 PH0-OSC_IN(PH0) I/O FT - EVENTOUT OSC_IN

DS10693 Rev 10 45/198

64
Pinout and pin description STM32F446xC/E

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

PH1-
6 13 F9 E1 24 I/O FT - EVENTOUT OSC_OUT
OSC_OUT(PH1)
7 14 D8 F1 25 NRST I/O RST - - -
SAI1_MCLK_B,
OTG_HS_ULPI_STP,
8 15 G9 H1 26 PC0 I/O FT - ADC123_IN10
FMC_SDNWE,
EVENTOUT
SPI3_MOSI/I2S3_SD,
SAI1_SD_A,
9 16 - H2 27 PC1 I/O FT - ADC123_IN11
SPI2_MOSI/I2S2_SD,
EVENTOUT
SPI2_MISO,
10 17 E8 H3 28 PC2 I/O FT - OTG_HS_ULPI_DIR, ADC123_IN12
FMC_SDNE0, EVENTOUT
SPI2_MOSI/I2S2_SD,
OTG_HS_ULPI_NXT,
11 18 F8 H4 29 PC3 I/O FT - ADC123_IN13
FMC_SDCKE0,
EVENTOUT
- 19 H9 - 30 VDD S - - - -
- - G8 - - VSS S - - - -
12 20 F7 J1 31 VSSA S - - - -
- - - K1 - VREF- S - - - -
- 21 - L1 32 VREF+ S - - - -
13 22 H8 M1 33 VDDA S - - - -
TIM2_CH1/TIM2_ETR,
TIM5_CH1, TIM8_ETR, ADC123_IN0,
14 23 J9 J2 34 PA0-WKUP(PA0) I/O FT -
USART2_CTS, WKUP0/TAMP_2
UART4_TX, EVENTOUT
TIM2_CH2, TIM5_CH2,
USART2_RTS,
UART4_RX,
15 24 G7 K2 35 PA1 I/O FT - ADC123_IN1
QUADSPI_BK1_IO3,
SAI2_MCLK_B,
EVENTOUT
TIM2_CH3, TIM5_CH3,
16 25 E7 L2 36 PA2 I/O FT - TIM9_CH1, USART2_TX, ADC123_IN2
SAI2_SCK_B, EVENTOUT

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STM32F446xC/E Pinout and pin description

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

TIM2_CH4, TIM5_CH4,
TIM9_CH2, SAI1_FS_A,
17 26 E6 M2 37 PA3 I/O FT - USART2_RX, ADC123_IN3
OTG_HS_ULPI_D0,
EVENTOUT
18 27 - G4 38 VSS S - - - -
- - J8 H5 - BYPASS_REG I FT - - -
19 28 - F4 39 VDD S - - - -
SPI1_NSS/I2S1_WS,
SPI3_NSS/I2S3_WS,
USART2_CK, ADC12_IN4,
20 29 H7 J3 40 PA4 I/O TTa -
OTG_HS_SOF, DAC_OUT1
DCMI_HSYNC,
EVENTOUT
TIM2_CH1/TIM2_ETR,
TIM8_CH1N,
ADC12_IN5,
21 30 F6 K3 41 PA5 I/O TTa - SPI1_SCK/I2S1_CK,
DAC_OUT2
OTG_HS_ULPI_CK,
EVENTOUT
TIM1_BKIN, TIM3_CH1,
TIM8_BKIN, SPI1_MISO,
22 31 G6 L3 42 PA6 I/O FT - I2S2_MCK, TIM13_CH1, ADC12_IN6
DCMI_PIXCLK,
EVENTOUT
TIM1_CH1N, TIM3_CH2,
TIM8_CH1N,
SPI1_MOSI/I2S1_SD,
23 32 E5 M3 43 PA7 I/O FT - ADC12_IN7
TIM14_CH1,
FMC_SDNWE,
EVENTOUT
I2S1_MCK, SPDIFRX_IN2,
24 33 J7 J4 44 PC4 I/O FT - ADC12_IN14
FMC_SDNE0, EVENTOUT
USART3_RX,
SPDIFRX_IN3,
25 34 - K4 45 PC5 I/O FT - ADC12_IN15
FMC_SDCKE0,
EVENTOUT

DS10693 Rev 10 47/198

64
Pinout and pin description STM32F446xC/E

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

TIM1_CH2N, TIM3_CH3,
TIM8_CH2N,
SPI3_MOSI/I2S3_SD,
26 35 F5 L4 46 PB0 I/O FT - ADC12_IN8
UART4_CTS,
OTG_HS_ULPI_D1,
SDIO_D1, EVENTOUT
TIM1_CH3N, TIM3_CH4,
TIM8_CH3N,
27 36 H6 M4 47 PB1 I/O FT - ADC12_IN9
OTG_HS_ULPI_D2,
SDIO_D2, EVENTOUT
TIM2_CH4, SAI1_SD_A,
SPI3_MOSI/I2S3_SD,
PB2-BOOT1
28 37 J6 J5 48 I/O FT - QUADSPI_CLK, -
(PB2)
OTG_HS_ULPI_D4,
SDIO_CK, EVENTOUT
SAI2_SD_B,
- - - M5 49 PF11 I/O FT - FMC_SDNRAS, -
DCMI_D12, EVENTOUT
- - - L5 50 PF12 I/O FT - FMC_A6, EVENTOUT -
- - - - 51 VSS S - - - -
- - - G5 52 VDD S - - - -
FMPI2C1_SMBA,
- - - K5 53 PF13 I/O FT - -
FMC_A7, EVENTOUT
FMPI2C1_SCL, FMC_A8,
- - - M6 54 PF14 I/O FTf - -
EVENTOUT
FMPI2C1_SDA, FMC_A9,
- - - L6 55 PF15 I/O FTf - -
EVENTOUT
- - - K6 56 PG0 I/O FT - FMC_A10, EVENTOUT -
- - - J6 57 PG1 I/O FT - FMC_A11, EVENTOUT -
TIM1_ETR, UART5_RX,
- 38 J5 M7 58 PE7 I/O FT - QUADSPI_BK2_IO0, -
FMC_D4, EVENTOUT
TIM1_CH1N, UART5_TX,
- 39 H5 L7 59 PE8 I/O FT - QUADSPI_BK2_IO1, -
FMC_D5, EVENTOUT
TIM1_CH1,
- 40 G5 K7 60 PE9 I/O FT - QUADSPI_BK2_IO2, -
FMC_D6, EVENTOUT

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STM32F446xC/E Pinout and pin description

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

- - - H6 61 VSS S - - - -
- - - G6 62 VDD S - - - -
TIM1_CH2N,
- 41 J4 J7 63 PE10 I/O FT - QUADSPI_BK2_IO3, -
FMC_D7, EVENTOUT
TIM1_CH2, SPI4_NSS,
- 42 - H8 64 PE11 I/O FT - SAI2_SD_B, FMC_D8, -
EVENTOUT
TIM1_CH3N, SPI4_SCK,
- 43 - J8 65 PE12 I/O FT - SAI2_SCK_B, FMC_D9, -
EVENTOUT
TIM1_CH3, SPI4_MISO,
- 44 - K8 66 PE13 I/O FT - SAI2_FS_B, FMC_D10, -
EVENTOUT
TIM1_CH4, SPI4_MOSI,
- 45 - L8 67 PE14 I/O FT - SAI2_MCLK_B, FMC_D11, -
EVENTOUT
TIM1_BKIN, FMC_D12,
- 46 - M8 68 PE15 I/O FT - -
EVENTOUT
TIM2_CH3, I2C2_SCL,
SPI2_SCK/I2S2_CK,
SAI1_SCK_A,
29 47 H4 M9 69 PB10 I/O FT - -
USART3_TX,
OTG_HS_ULPI_D3,
EVENTOUT
TIM2_CH4, I2C2_SDA,
- - - M10 70 PB11 I/O FT - USART3_RX, SAI2_SD_A, -
EVENTOUT
30 48 J3 H7 71 VCAP_1 S - - - -
31 49 H3 - - VSS S - - - -
32 50 J2 G7 72 VDD S - - - -
TIM1_BKIN, I2C2_SMBA,
SPI2_NSS/I2S2_WS,
SAI1_SCK_B,
33 51 G4 M11 73 PB12 I/O FT - -
USART3_CK, CAN2_RX,
OTG_HS_ULPI_D5,
OTG_HS_ID, EVENTOUT

DS10693 Rev 10 49/198

64
Pinout and pin description STM32F446xC/E

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

TIM1_CH1N,
SPI2_SCK/I2S2_CK,
34 52 H2 M12 74 PB13 I/O FT - USART3_CTS, CAN2_TX, OTG_HS_VBUS
OTG_HS_ULPI_D6,
EVENTOUT
TIM1_CH2N, TIM8_CH2N,
SPI2_MISO,
35 53 J1 L11 75 PB14(1) I/O FT - USART3_RTS, -
TIM12_CH1,
OTG_HS_DM, EVENTOUT
RTC_REFIN, TIM1_CH3N,
TIM8_CH3N,
36 54 G3 L12 76 PB15(1) I/O FT - SPI2_MOSI/I2S2_SD, -
TIM12_CH2, OTG_HS_DP,
EVENTOUT
USART3_TX,
- 55 - L9 77 PD8 I/O FT - SPDIFRX_IN1, FMC_D13, -
EVENTOUT
USART3_RX, FMC_D14,
- 56 - K9 78 PD9 I/O FT - -
EVENTOUT
USART3_CK, FMC_D15,
- 57 - J9 79 PD10 I/O FT - -
EVENTOUT
FMPI2C1_SMBA,
USART3_CTS,
- 58 H1 H9 80 PD11 I/O FT - QUADSPI_BK1_IO0, -
SAI2_SD_A, FMC_A16,
EVENTOUT
TIM4_CH1,
FMPI2C1_SCL,
USART3_RTS,
- 59 G2 L10 81 PD12 I/O FTf - -
QUADSPI_BK1_IO1,
SAI2_FS_A, FMC_A17,
EVENTOUT
TIM4_CH2,
FMPI2C1_SDA,
- 60 G1 K10 82 PD13 I/O FTf - QUADSPI_BK1_IO3, -
SAI2_SCK_A, FMC_A18,
EVENTOUT
- - - G8 83 VSS S - - - -
- - - F8 84 VDD S - - - -

50/198 DS10693 Rev 10

STM32F446xC/E Pinout and pin description

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

TIM4_CH3,
FMPI2C1_SCL,
- 61 - K11 85 PD14 I/O FTf - -
SAI2_SCK_A, FMC_D0,
EVENTOUT
TIM4_CH4,
- 62 - K12 86 PD15 I/O FTf - FMPI2C1_SDA, FMC_D1, -
EVENTOUT
- - - J12 87 PG2 I/O FT - FMC_A12, EVENTOUT -
- - - J11 88 PG3 I/O FT - FMC_A13, EVENTOUT -
FMC_A14/FMC_BA0,
- - - J10 89 PG4 I/O FT - -
EVENTOUT
FMC_A15/FMC_BA1,
- - - H12 90 PG5 I/O FT - -
EVENTOUT
QUADSPI_BK1_NCS,
- - - H11 91 PG6 I/O FT - -
DCMI_D12, EVENTOUT
USART6_CK, FMC_INT,
- - - H10 92 PG7 I/O FT - -
DCMI_D13, EVENTOUT
SPDIFRX_IN2,
- - - G11 93 PG8 I/O FT - USART6_RTS, -
FMC_SDCLK, EVENTOUT
- - - - 94 VSS S - - - -
- - - F10 - VDD S - - - -
- - E1 C11 95 VDDUSB S - - - -
TIM3_CH1, TIM8_CH1,
FMPI2C1_SCL,
37 63 F1 G12 96 PC6 I/O FTf - I2S2_MCK, USART6_TX, -
SDIO_D6, DCMI_D0,
EVENTOUT
TIM3_CH2, TIM8_CH2,
FMPI2C1_SDA,
SPI2_SCK/I2S2_CK,
38 64 F2 F12 97 PC7 I/O FTf - -
I2S3_MCK, SPDIFRX_IN1,
USART6_RX, SDIO_D7,
DCMI_D1, EVENTOUT
TRACED0, TIM3_CH3,
TIM8_CH3, UART5_RTS,
39 65 F3 F11 98 PC8 I/O FT - -
USART6_CK, SDIO_D0,
DCMI_D2, EVENTOUT

DS10693 Rev 10 51/198

64
Pinout and pin description STM32F446xC/E

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

MCO2, TIM3_CH4,
TIM8_CH4, I2C3_SDA,
I2S_CKIN, UART5_CTS,
40 66 D1 E11 99 PC9 I/O FT - -
QUADSPI_BK1_IO0,
SDIO_D1, DCMI_D3,
EVENTOUT
MCO1, TIM1_CH1,
I2C3_SCL, USART1_CK,
41 67 E2 E12 100 PA8 I/O FT - -
OTG_FS_SOF,
EVENTOUT
TIM1_CH2, I2C3_SMBA,
SPI2_SCK/I2S2_CK,
42 68 F4 D12 101 PA9 I/O FT - OTG_FS_VBUS
SAI1_SD_B, USART1_TX,
DCMI_D0, EVENTOUT
TIM1_CH3, USART1_RX,
43 69 E3 D11 102 PA10 I/O FT - OTG_FS_ID, DCMI_D1, -
EVENTOUT
TIM1_CH4, USART1_CTS,
44 70 C1 C12 103 PA11(1) I/O FT - CAN1_RX, OTG_FS_DM, -
EVENTOUT
TIM1_ETR, USART1_RTS,
45 71 E4 B12 104 PA12(1) I/O FT - SAI2_FS_B, CAN1_TX, -
OTG_FS_DP, EVENTOUT
JTMS-SWDIO,
46 72 D2 A12 105 PA13(JTMS-SWDIO) I/O FT - -
EVENTOUT
- 73 C2 G9 106 VCAP_2 S - - - -
47 74 B1 G10 107 VSS S - - - -
48 75 A1 F9 108 VDD S - - - -
JTCK-SWCLK,
49 76 C3 A11 109 PA14(JTCK-SWCLK) I/O FT - -
EVENTOUT
JTDI,
TIM2_CH1/TIM2_ETR,
HDMI_CEC,
50 77 B2 A10 110 PA15(JTDI) I/O FT - -
SPI1_NSS/I2S1_WS,
SPI3_NSS/I2S3_WS,
UART4_RTS, EVENTOUT

52/198 DS10693 Rev 10

STM32F446xC/E Pinout and pin description

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

SPI3_SCK/I2S3_CK,
USART3_TX, UART4_TX,
51 78 D3 B11 111 PC10 I/O FT - QUADSPI_BK1_IO1, -
SDIO_D2, DCMI_D8,
EVENTOUT
SPI3_MISO, USART3_RX,
UART4_RX,
52 79 D4 B10 112 PC11 I/O FT - QUADSPI_BK2_NCS, -
SDIO_D3, DCMI_D4,
EVENTOUT
I2C2_SDA,
SPI3_MOSI/I2S3_SD,
53 80 A2 C10 113 PC12 I/O FT - USART3_CK, UART5_TX, -
SDIO_CK, DCMI_D9,
EVENTOUT
SPI4_MISO,
SPI3_MOSI/I2S3_SD,
- 81 B3 E10 114 PD0 I/O FT - -
CAN1_RX, FMC_D2,
EVENTOUT
SPI2_NSS/I2S2_WS,
- 82 C4 D10 115 PD1 I/O FT - CAN1_TX, FMC_D3, -
EVENTOUT
TIM3_ETR, UART5_RX,
54 83 D5 E9 116 PD2 I/O FT - SDIO_CMD, DCMI_D11, -
EVENTOUT
TRACED1,
SPI2_SCK/I2S2_CK,
USART2_CTS,
- 84 - D9 117 PD3 I/O FT - -
QUADSPI_CLK,
FMC_CLK, DCMI_D5,
EVENTOUT
USART2_RTS, FMC_NOE,
- 85 A3 C9 118 PD4 I/O FT - -
EVENTOUT
USART2_TX, FMC_NWE,
- 86 - B9 119 PD5 I/O FT - -
EVENTOUT
- - - E7 120 VSS S - - - -
- - - F7 121 VDD S - - - -

DS10693 Rev 10 53/198

64
Pinout and pin description STM32F446xC/E

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

SPI3_MOSI/I2S3_SD,
SAI1_SD_A, USART2_RX,
- 87 B4 A8 122 PD6 I/O FT - -
FMC_NWAIT, DCMI_D10,
EVENTOUT
USART2_CK,
- 88 A4 A9 123 PD7 I/O FT - SPDIFRX_IN0, FMC_NE1, -
EVENTOUT
SPDIFRX_IN3,
USART6_RX,
QUADSPI_BK2_IO2,
- - - E8 124 PG9 I/O FT - SAI2_FS_B, -
FMC_NE2/FMC_NCE3,
DCMI_VSYNC,
EVENTOUT
SAI2_SD_B, FMC_NE3,
- - - D8 125 PG10 I/O FT - -
DCMI_D2, EVENTOUT
SPI4_SCK, SPDIFRX_IN0,
- - - C8 126 PG11 I/O FT - -
DCMI_D3, EVENTOUT
SPI4_MISO,
SPDIFRX_IN1,
- - - B8 127 PG12 I/O FT - -
USART6_RTS, FMC_NE4,
EVENTOUT
TRACED2, SPI4_MOSI,
- - - D7 128 PG13 I/O FT - USART6_CTS, FMC_A24, -
EVENTOUT
TRACED3, SPI4_NSS,
USART6_TX,
- - - C7 129 PG14 I/O FT - -
QUADSPI_BK2_IO3,
FMC_A25, EVENTOUT
- - - - 130 VSS S - - - -
- - - F6 131 VDD S - - - -
USART6_CTS,
- - - B7 132 PG15 I/O FT - FMC_SDNCAS, -
DCMI_D13, EVENTOUT
JTDO/TRACESWO,
TIM2_CH2, I2C2_SDA,
PB3(JTDO/TRACES
55 89 A5 A7 133 I/O FT - SPI1_SCK/I2S1_CK, -
WO)
SPI3_SCK/I2S3_CK,
EVENTOUT

54/198 DS10693 Rev 10

STM32F446xC/E Pinout and pin description

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

NJTRST, TIM3_CH1,
I2C3_SDA, SPI1_MISO,
56 90 B5 A6 134 PB4(NJTRST) I/O FT - SPI3_MISO, -
SPI2_NSS/I2S2_WS,
EVENTOUT
TIM3_CH2, I2C1_SMBA,
SPI1_MOSI/I2S1_SD,
SPI3_MOSI/I2S3_SD,
57 91 A6 B6 135 PB5 I/O FT - CAN2_RX, -
OTG_HS_ULPI_D7,
FMC_SDCKE1,
DCMI_D10, EVENTOUT
TIM4_CH1, HDMI_CEC,
I2C1_SCL, USART1_TX,
CAN2_TX,
58 92 C5 C6 136 PB6 I/O FT - -
QUADSPI_BK1_NCS,
FMC_SDNE1, DCMI_D5,
EVENTOUT
TIM4_CH2, I2C1_SDA,
USART1_RX,
59 93 B6 D6 137 PB7 I/O FT - SPDIFRX_IN0, FMC_NL, -
DCMI_VSYNC,
EVENTOUT
60 94 A7 D5 138 BOOT0 I B - - VPP
TIM2_CH1/TIM2_ETR,
TIM4_CH3, TIM10_CH1,
61 95 C6 C5 139 PB8 I/O FT - I2C1_SCL, CAN1_RX, -
SDIO_D4, DCMI_D6,
EVENTOUT
TIM2_CH2, TIM4_CH4,
TIM11_CH1, I2C1_SDA,
SPI2_NSS/I2S2_WS,
62 96 C7 B5 140 PB9 I/O FT - -
SAI1_FS_B, CAN1_TX,
SDIO_D5, DCMI_D7,
EVENTOUT
TIM4_ETR,
SAI2_MCLK_A,
- 97 - A5 141 PE0 I/O FT - -
FMC_NBL0, DCMI_D2,
EVENTOUT
FMC_NBL1, DCMI_D3,
- 98 - A4 142 PE1 I/O FT - -
EVENTOUT

DS10693 Rev 10 55/198

64
Pinout and pin description STM32F446xC/E

Table 10. STM32F446xx pin and ball descriptions (continued)

Pin number

I/O structure
Pin type
UFBGA144

Notes
WLCSP 81

Pin name (function Additional

LQFP100

LQFP144
LQFP64

Alternate functions
after reset) functions

63 99 B7 E6 - VSS S - - - -
- - B8 E5 143 PDR_ON S - - - -
64 100 A8 F5 144 VDD S - - - -
1. PA11, PA12, PB14 and PB15 I/Os are supplied by VDDUSB

56/198 DS10693 Rev 10

 STM32F446xC/E
Table 11. Alternate function
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/3/ SAI/ CAN1/2 SAI2/

FMC/
TIM8/9/10/11 I2C1/2/3 SPI2/3/4/ USART1/2/3 USART6/ TIM12/13/ QUADSPI/
SYS TIM1/2 TIM3/4/5
CEC /4/CEC
SPI1/2/3/4
SAI1 /UART5/ UART4/5/ 14/ OTG2_HS/
OTG1_FS SDIO/ DCMI - SYS
OTG2_FS
SPDIFRX SPDIFRX QUADSPI OTG1_FS

TIM2_CH1/ USART2_ UART4_ EVENT

PA0 - TIM5_CH1 TIM8_ETR - - - - - - - - -
TIM2_ETR CTS TX OUT

USART2_ UART4_ QUADSPI_ SAI2_ EVENT

PA1 - TIM2_CH2 TIM5_CH2 - - - - - - - -
RTS RX BK1_IO3 MCLK_B OUT

USART2_ SAI2_ EVENT

PA2 - TIM2_CH3 TIM5_CH3 TIM9_CH1 - - - - - - - - -
TX SCK_B OUT

SAI1_ USART2_ OTG_HS_ EVENT

PA3 - TIM2_CH4 TIM5_CH4 TIM9_CH2 - - - - - - - -
FS_A RX ULPI_D0 OUT

SPI3_NSS
SPI1_NSS/I USART2_ OTG_HS_ DCMI_ EVENT
PA4 - - - - - / - - - - -
2S1_WS CK SOF HSYNC OUT
I2S3_WS
DS10693 Rev 10

TIM2_CH1/ TIM8_ SPI1_SCK/I OTG_HS_ EVENT

PA5 - - - - - - - - - - -
TIM2_ETR CH1N 2S1_CK ULPI_CK OUT

TIM1_ TIM8_ I2S2_ DCMI_ EVENT

PA6 - TIM3_CH1 - SPI1_MISO - - TIM13_CH1 - - - -
BKIN BKIN MCK PIXCLK OUT

SPI1_MOSI
TIM1_ TIM8_ FMC_ EVENT
PA7 - TIM3_CH2 - / - - - TIM14_CH1 - - - -
CH1N CH1N SDNWE OUT
A I2S1_SD

I2C3_ USART1_ OTG_FS_ EVENT

PA8 MCO1 TIM1_CH1 - - - - - - - - - -
SCL CK SOF OUT

I2C3_ SPI2_SCK SAI1_ USART1_ EVENT

PA9 - TIM1_CH2 - - - - - - - DCMI_D0 -
SMBA /I2S2_CK SD_B TX OUT

USART1_ OTG_FS_ EVENT

PA10 - TIM1_CH3 - - - - - - - - - DCMI_D1 -
RX ID OUT

Pinout and pin description

USART1_ OTG_FS_ EVENT
PA11 - TIM1_CH4 - - - - - - CAN1_RX - - - -
CTS DM OUT

USART1_ SAI2_ OTG_FS_ EVENT

PA12 - TIM1_ETR - - - - - CAN1_TX - - - -
RTS FS_B DP OUT

JTMS- EVENT
PA13 - - - - - - - - - - - - - -
SWDIO OUT

JTCK- EVENT
PA14 - - - - - - - - - - - - - -
SWCLK OUT

SPI3_
TIM2_CH1/ HDMI_ SPI1_NSS/ UART4_RT EVENT
PA15 JTDI - - NSS/ - - - - - - -
TIM2_ETR CEC I2S1_WS S OUT
I2S3_WS
57/198
 Table 11. Alternate function (continued)
58/198

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/3/ SAI/ CAN1/2 SAI2/

FMC/
TIM8/9/10/11 I2C1/2/3 SPI2/3/4/ USART1/2/3 USART6/ TIM12/13/ QUADSPI/
SYS TIM1/2 TIM3/4/5
CEC /4/CEC
SPI1/2/3/4
SAI1 /UART5/ UART4/5/ 14/ OTG2_HS/
OTG1_FS SDIO/ DCMI - SYS
OTG2_FS
SPDIFRX SPDIFRX QUADSPI OTG1_FS

TIM8_ SPI3_MOSI/ UART4_ OTG_HS_ EVENT

PB0 - TIM1_CH2N TIM3_CH3 - - - - - SDIO_D1 - -
CH2N I2S3_SD CTS ULPI_D1 OUT

TIM8_ OTG_HS_ EVENT

PB1 - TIM1_CH3N TIM3_CH4 - - - - - - - SDIO_D2 - -
CH3N ULPI_D2 OUT

SAI1_ SPI3_MOSI/ QUADSPI_ OTG_HS_ EVENT

PB2 - TIM2_CH4 - - - - - - SDIO_CK - -
SD_A I2S3_SD CLK ULPI_D4 OUT

JTDO/ SPI3_SCK
I2C2_ SPI1_SCK EVENT
PB3 TRACE TIM2_CH2 - - / - - - - - - - -
SDA /I2S1_CK OUT
SWO I2S3_CK

NJTRS I2C3_ SPI3_ SPI2_NSS/ EVENT

PB4 - TIM3_CH1 - SPI1_MISO - - - - - - -
T SDA MISO I2S2_WS OUT

SPI3_
I2C1_ SPI1_MOSI OTG_HS_ FMC_ DCMI_ EVENT
PB5 - - TIM3_CH2 - MOSI/ - - CAN2_RX - -
DS10693 Rev 10

SMBA /I2S1_SD ULPI_D7 SDCKE1 D10 OUT

I2S3_SD

HDMI_ I2C1_ USART1_ QUADSPI_ FMC_ EVENT

PB6 - - TIM4_CH1 - - - CAN2_TX - DCMI_D5 -
CEC SCL TX BK1_NCS SDNE1 OUT

I2C1_ USART1_ SPDIF_ DCMI_ EVENT

PB7 - - TIM4_CH2 - - - - - - FMC_NL -
SDA RX RX0 VSYNC OUT
B
TIM2_CH1/ TIM10_ I2C1_ EVENT
PB8 - TIM4_CH3 - - - - CAN1_RX - - SDIO_D4 DCMI_D6 -
TIM2_ETR CH1 SCL OUT

TIM11_ I2C1_ SPI2_NSS/ SAI1_ EVENT

PB9 - TIM2_CH2 TIM4_CH4 - - CAN1_TX - - SDIO_D5 DCMI_D7 -
CH1 SDA I2S2_WS FS_B OUT

I2C2_ SPI2_SCK/ SAI1_ USART3_ OTG_HS_ EVENT

PB10 - TIM2_CH3 - - - - - - - -
SCL I2S2_CK SCK_A TX ULPI_D3 OUT

I2C2_ USART3_ SAI2_ EVENT

PB11 - TIM2_CH4 - - - - - - - - - -
SDA RX SD_A OUT

I2C2_ SPI2_NSS/ SAI1_ USART3_ OTG_HS_ OTG_ EVENT

PB12 - TIM1_BKIN - - - CAN2_RX - - -
SMBA I2S2_WS SCK_B CK ULPI_D5 HS_ID OUT

SPI2_SCK/ USART3_ OTG_HS_ EVENT

PB13 - TIM1_CH1N - - - - - CAN2_TX - - - -
I2S2_CK CTS ULPI_D6 OUT

STM32F446xC/E
TIM8_ USART3_ OTG_ EVENT
PB14 - TIM1_CH2N - - SPI2_MISO - - TIM12_CH1 - - - -
CH2N RTS HS_DM OUT

RTC_ TIM8_ SPI2_MOSI OTG_ EVENT

PB15 TIM1_CH3N - - - - - TIM12_CH2 - - - -
REFIN CH3N /I2S2_SD HS_DP OUT
 Table 11. Alternate function (continued)

STM32F446xC/E
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/3/ SAI/ CAN1/2 SAI2/

FMC/
TIM8/9/10/11 I2C1/2/3 SPI2/3/4/ USART1/2/3 USART6/ TIM12/13/ QUADSPI/
SYS TIM1/2 TIM3/4/5
CEC /4/CEC
SPI1/2/3/4
SAI1 /UART5/ UART4/5/ 14/ OTG2_HS/
OTG1_FS SDIO/ DCMI - SYS
OTG2_FS
SPDIFRX SPDIFRX QUADSPI OTG1_FS

SAI1_ OTG_HS_ FMC_ EVENT

PC0 - - - - - - - - - - - -
MCLK_B ULPI_STP SDNWE OUT

SPI3_MOSI SAI1_ SPI2_MOSI EVENT

PC1 - - - - - - - - - - - -
/I2S3_SD SD_A /I2S2_SD OUT

OTG_HS_ FMC_ EVENT

PC2 - - - - - SPI2_MISO - - - - - - -
ULPI_DIR SDNE0 OUT

SPI2_MOS OTG_HS_ FMC_ EVENT

PC3 - - - - - - - - - - - -
II2S2_SD ULPI_NXT SDCKE0 OUT

SPDIF_ FMC_ EVENT

PC4 - - - - - I2S1_MCK - - - - - - -
RX2 SDNE0 OUT

SPDIF_ FMC_ EVENT

PC5 - - - - - - - USART3_RX - - - - -
DS10693 Rev 10

RX3 SDCKE0 OUT

FMPI2C1 USART6 EVENT

PC6 - - TIM3_CH1 TIM8_CH1 I2S2_MCK - - - - - SDIO_D6 DCMI_D0 -
_SCL _TX OUT

FMPI2C1 SPI2_SCK/ USART6 EVENT

PC7 - - TIM3_CH2 TIM8_CH2 I2S3_MCK SPDIF_RX1 - - - SDIO_D7 DCMI_D1 -
_SDA I2S2_CK _RX OUT
C
TRACE USART6 EVENT
PC8 - TIM3_CH3 TIM8_CH3 - - - UART5_RTS - - - SDIO_D0 DCMI_D2 -
D0 _CK OUT

I2C3_ QUADSPI_ EVENT

PC9 MCO2 - TIM3_CH4 TIM8_CH4 I2S_CKIN - UART5_CTS - - - SDIO_D1 DCMI_D3 -
SDA BK1_IO0 OUT

SPI3_SCK QUADSPI_ EVENT

PC10 - - - - - - USART3_TX UART4_TX - - SDIO_D2 DCMI_D8 -
/I2S3_CK BK1_IO1 OUT

SPI3_ QUADSPI_ EVENT

PC11 - - - - - - USART3_RX UART4_RX - - SDIO_D3 DCMI_D4 -
MISO BK2_NCS OUT

Pinout and pin description

SPI3_
I2C2_ EVENT
PC12 - - - - - MOSI/ USART3_CK UART5_TX - - - SDIO_CK DCMI_D9 -
SDA OUT
I2S3_SD

EVENT
PC13 - - - - - - - - - - - - - - -
OUT

EVENT
PC14 - - - - - - - - - - - - - - -
OUT

EVENT
PC15 - - - - - - - - - - - - - - -
OUT
59/198
 Table 11. Alternate function (continued)
60/198

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/3/ SAI/ CAN1/2 SAI2/

FMC/
TIM8/9/10/11 I2C1/2/3 SPI2/3/4/ USART1/2/3 USART6/ TIM12/13/ QUADSPI/
SYS TIM1/2 TIM3/4/5
CEC /4/CEC
SPI1/2/3/4
SAI1 /UART5/ UART4/5/ 14/ OTG2_HS/
OTG1_FS SDIO/ DCMI - SYS
OTG2_FS
SPDIFRX SPDIFRX QUADSPI OTG1_FS

SPI3_
EVENT
PD0 - - - - - SPI4_MISO MOSI/ - - CAN1_RX - - FMC_D2 - -
OUT
I2S3_SD

SPI2_NSS/ EVENT
PD1 - - - - - - - - CAN1_TX - - FMC_D3 - -
I2S2_WS OUT

DCMI_ EVENT
PD2 - - TIM3_ETR - - - - - UART5_RX - - - SDIO_CMD
D11
-
OUT

TRACE SPI2_SCK/ USART2_ QUADSPI_ DCMI_ EVENT

PD3 - - - - - - - - FMC_CLK -
D1 I2S2_CK CTS CLK D5 OUT

USART2_ EVENT
PD4 - - - - - - - - - - - FMC_NOE - -
RTS OUT

USART2_ EVENT
PD5 - - - - - - - - - - - FMC_NWE - -
TX OUT
DS10693 Rev 10

SPI3_
SAI1_ USART2_ FMC_ DCMI_ EVENT
PD6 - - - - - MOSI/ - - - - -
SD_A RX NWAIT D10 OUT
I2S3_SD

USART2_ SPDIF_ EVENT

PD7 - - - - - - - - - - FMC_NE1 - -
D CK RX0 OUT

USART3_ SPDIF_ EVENT

PD8 - - - - - - - - - - FMC_D13 - -
TX RX1 OUT

USART3_ EVENT
PD9 - - - - - - - - - - - FMC_D14 - -
RX OUT

USART3_ EVENT
PD10 - - - - - - - - - - - FMC_D15 - -
CK OUT

FMPI2C1 USART3_ QUADSPI_ EVENT

PD11 - - - -
_SMBA
- -
CTS
-
BK1_IO0
SAI2_SD_A - FMC_A16 - -
OUT

FMPI2C1 USART3_ QUADSPI_ EVENT

PD12 - - TIM4_CH1 - - - - SAI2_FS_A - FMC_A17 - -
_SCL RTS BK1_IO1 OUT

FMPI2C1 QUADSPI_ EVENT

PD13 - - TIM4_CH2 - - - - - SAI2_SCK_A - FMC_A18 - -
_SDA BK1_IO3 OUT

STM32F446xC/E
FMPI2C1 SAI2_ EVENT
PD14 - - TIM4_CH3 - - - - - - - FMC_D0 - -
_SCL SCK_A OUT

FMPI2C1 EVENT
PD15 - - TIM4_CH4 - - - - - - - - FMC_D1 - -
_SDA OUT
 Table 11. Alternate function (continued)

STM32F446xC/E
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/3/ SAI/ CAN1/2 SAI2/

FMC/
TIM8/9/10/11 I2C1/2/3 SPI2/3/4/ USART1/2/3 USART6/ TIM12/13/ QUADSPI/
SYS TIM1/2 TIM3/4/5
CEC /4/CEC
SPI1/2/3/4
SAI1 /UART5/ UART4/5/ 14/ OTG2_HS/
OTG1_FS SDIO/ DCMI - SYS
OTG2_FS
SPDIFRX SPDIFRX QUADSPI OTG1_FS

SAI2_ FMC_ EVENT

PE0 - - TIM4_ETR - - - - - - - - DCMI_D2 -
MCLK_A NBL0 OUT

FMC_ EVENT
PE1 - - - - - - - - - - - - DCMI_D3 -
NBL1 OUT

TRACE SAI1_ QUADSPI_ EVENT

PE2 - - - - SPI4_SCK - - - - FMC_A23 - -
CLK MCLK_A BK1_IO2 OUT

TRACE SAI1_ EVENT

PE3 - - - - - - - - - - FMC_A19 - -
D0 SD_B OUT

TRACE SAI1_ EVENT

PE4 - - - - SPI4_NSS - - - - - FMC_A20 DCMI_D4 -
D1 FS_A OUT

TRACE SAI1_ EVENT

PE5 - - TIM9_CH1 - SPI4_MISO - - - - - FMC_A21 DCMI_D6 -
D2 SCK_A OUT
DS10693 Rev 10

TRACE SAI1_ EVENT

PE6 - - TIM9_CH2 - SPI4_MOSI - - - - - FMC_A22 DCMI_D7 -
D3 SD_A OUT

QUADSPI_ EVENT
PE7 - TIM1_ETR - - - - - - UART5_RX - - FMC_D4 - -
BK2_IO0 OUT
E
QUADSPI_ EVENT
PE8 - TIM1_CH1N - - - - - - UART5_TX - - FMC_D5 - -
BK2_IO1 OUT

QUADSPI_ EVENT
PE9 - TIM1_CH1 - - - - - - - - - FMC_D6 - -
BK2_IO2 OUT

QUADSPI_ EVENT
PE10 - TIM1_CH2N - - - - - - - - - FMC_D7 - -
BK2_IO3 OUT

SAI2_
EVENT
PE11 - TIM1_CH2 - - - SPI4_NSS - - - - SD_B - FMC_D8 - -
OUT

Pinout and pin description

SAI2_ EVENT
PE12 - TIM1_CH3N - - - SPI4_SCK - - - - - FMC_D9 - -
SCK_B OUT

SAI2_ EVENT
PE13 - TIM1_CH3 - - - SPI4_MISO - - - - - FMC_D10 - -
FS_B OUT

SAI2_ EVENT
PE14 - TIM1_CH4 - - - SPI4_MOSI - - - - - FMC_D11 - -
MCLK_B OUT

EVENT
PE15 - TIM1_BKIN - - - - - - - - - - FMC_D12 - -
OUT
61/198
 Table 11. Alternate function (continued)
62/198

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/3/ SAI/ CAN1/2 SAI2/

FMC/
TIM8/9/10/11 I2C1/2/3 SPI2/3/4/ USART1/2/3 USART6/ TIM12/13/ QUADSPI/
SYS TIM1/2 TIM3/4/5
CEC /4/CEC
SPI1/2/3/4
SAI1 /UART5/ UART4/5/ 14/ OTG2_HS/
OTG1_FS SDIO/ DCMI - SYS
OTG2_FS
SPDIFRX SPDIFRX QUADSPI OTG1_FS

I2C2_ EVENT
PF0 - - - - - - - - - - - FMC_A0 - -
SDA OUT

I2C2_ EVENT
PF1 - - - - SCL
- - - - - - - FMC_A1 - -
OUT

I2C2_ EVENT
PF2 - - - - - - - - - - - FMC_A2 - -
SMBA OUT

EVENT
PF3 - - - - - - - - - - - - FMC_A3 - -
OUT

EVENT
PF4 - - - - - - - - - - - - FMC_A4 - -
OUT

EVENT
PF5 - - - - - - - - - - - - FMC_A5 - -
OUT
DS10693 Rev 10

TIM10_ SAI1_ QUADSPI_ EVENT

PF6 - - -
CH1
- -
SD_B
- -
BK1_IO3
- - - - -
OUT

TIM11_ SAI1_ QUADSPI_ EVENT

PF7 - - -
CH1
- -
MCLK_B
- -
BK1_IO2
- - - - -
OUT
F
SAI1_ QUADSPI_ EVENT
PF8 - - - - - -
SCK_B
- - TIM13_CH1
BK1_IO0
- - - -
OUT

SAI1_ QUADSPI_ EVENT

PF9 - - - - - -
FS_B
- - TIM14_CH1
BK1_IO1
- - - -
OUT

DCMI_ EVENT
PF10 - - - - - - - - - - - - - D11
-
OUT

FMC_ DCMI_ EVENT

PF11 - - - - - - - - - - SAI2_SD_B - -
SDNRAS D12 OUT

EVENT
PF12 - - - - - - - - - - - - FMC_A6 - -
OUT

FMPI2C1 EVENT
PF13 - - - - - - - - - - - FMC_A7 - -
_SMBA OUT

FMPI2C1 EVENT
PF14 - - - - - - - - - - - FMC_A8 - -
_SCL OUT

STM32F446xC/E
FMPI2C1 EVENT
PF15 - - - - - - - - - - - FMC_A9 - -
_SDA OUT
 Table 11. Alternate function (continued)

STM32F446xC/E
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/3/ SAI/ CAN1/2 SAI2/

FMC/
TIM8/9/10/11 I2C1/2/3 SPI2/3/4/ USART1/2/3 USART6/ TIM12/13/ QUADSPI/
SYS TIM1/2 TIM3/4/5
CEC /4/CEC
SPI1/2/3/4
SAI1 /UART5/ UART4/5/ 14/ OTG2_HS/
OTG1_FS SDIO/ DCMI - SYS
OTG2_FS
SPDIFRX SPDIFRX QUADSPI OTG1_FS

EVENT
PG0 - - - - - - - - - - - - FMC_A10 - -
OUT

EVENT
PG1 - - - - - - - - - - - - FMC_A11 - -
OUT

EVENT
PG2 - - - - - - - - - - - - FMC_A12 - -
OUT

EVENT
PG3 - - - - - - - - - - - - FMC_A13 - -
OUT

FMC_A14/ EVENT
PG4 - - - - - - - - - - - - - -
FMC_BA0 OUT

FMC_A15/ EVENT
PG5 - - - - - - - - - - - - - -
FMC_BA1 OUT
DS10693 Rev 10

QUADSPI_ DCMI_ EVENT

PG6 - - - - - - - - - - - - -
BK1_NCS D12 OUT

USART6_C DCMI_ EVENT

PG7 - - - - - - - - - - - FMC_INT -
K D13 OUT

G SPDIFRX_ USART6_R FMC_ EVENT

PG8 - - - - - - - - - - - -
IN2 TS SDCLK OUT

SPDIFRX_ USART6_R QUADSPI_ FMC_NE2/ DCMI_ EVENT

PG9 - - - - - - - SAI2_FS_B - -
IN3 X BK2_IO2 FMC_NCE3 VSYNC(1) OUT

EVENT
PG10 - - - - - - - - - - SAI2_SD_B - FMC_NE3 DCMI_D2 -
OUT

SPI4_ SPDIFRX_ EVENT

PG11 - - - - - -
SCK IN0
- - - - - DCMI_D3 -
OUT

SPI4_ SPDIFRX_ USART6_R EVENT

Pinout and pin description

PG12 - - - - - - - - - FMC_NE4 - -
MISO IN1 TS OUT

TRACE SPI4_ USART6_C EVENT

PG13 - - - - - - - - - FMC_A24 - -
D2 MOSI TS OUT

TRACE SPI4_ USART6_T QUADSPI_ EVENT

PG14 - - - - - - - - FMC_A25 - -
D3 NSS X BK2_IO3 OUT

USART6_C FMC_ DCMI_ EVENT

PG15 - - - - - - - - - - - -
TS SDNCAS D13 OUT
63/198
 Table 11. Alternate function (continued)
64/198

Pinout and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port SPI2/3/ SAI/ CAN1/2 SAI2/

FMC/
TIM8/9/10/11 I2C1/2/3 SPI2/3/4/ USART1/2/3 USART6/ TIM12/13/ QUADSPI/
SYS TIM1/2 TIM3/4/5
CEC /4/CEC
SPI1/2/3/4
SAI1 /UART5/ UART4/5/ 14/ OTG2_HS/
OTG1_FS SDIO/ DCMI - SYS
OTG2_FS
SPDIFRX SPDIFRX QUADSPI OTG1_FS

EVENT
PH0 - - - - - - - - - - - - - - -
OUT
H
EVENT
PH1 - - - - - - - - - - - - - - -
OUT

1. The DCMI_VSYNC alternate function on PG9 is only available on silicon revision 3.

DS10693 Rev 10

STM32F446xC/E
STM32F446xC/E Memory mapping

5 Memory mapping

The memory map is shown in Figure 15.

Figure 15. Memory map

Reserved 0xE010 0000 - 0xFFFF FFFF

Cortex-M4 internal
peripherals 0xE000 0000 - 0xE00F FFFF

AHB3 0x6000 0000 - 0xDFFF FFFF

Reserved 0x5006 0C00 - 0x5FFF FFFF

0x5006 0BFF

AHB2
0xFFFF FFFF 512-Mbyte
Block 7
Cortex-M4 0x5000 0000
Internal Reserved 0x4008 0000 - 0x4FFF FFFF
peripherals
0x4007 FFFF
0xE000 0000
0xDFFF FFFF
512-Mbyte
Block 6
FMC
0xD000 0000
0xCFFF FFFF AHB1
512-Mbyte
Block 5
FMC/QuadSPI
0xA000 0000
0x9FFF FFFF
512-Mbyte 0x4002 0000
Block 4 Reserved 0x4001 6C00 - 0x4001 FFFF
FMC bank 3
and QuadSPI 0x4001 6BFF
0x8000 0000
0x7FFF FFFF
512-Mbyte
Block 3
FMC bank 1

0x6000 0000
0x5FFF FFFF
APB2
512-Mbyte
Block 2
Peripherals
0x4000 0000
0x3FFF FFFF
512-Mbyte
Block 1
SRAM Reserved 0x2003 0000 - 0x3FFF FFFF
0x4001 0000
0x2000 0000 Reserved 0x2002 0000 - 0x2002 FFFF Reserved 0x4000 8000 - 0x4000 FFFF
0x1FFF FFFF
0x4000 7FFF
512-Mbyte SRAM (16 KB aliased 0x2001 C000 - 0x2001 FFFF
Block 0 By bit-banding
SRAM SRAM (112 KB aliased 0x2000 0000 - 0x2001 BFFF
By bit-banding
0x0000 0000
Reserved 0x1FFF C008 - 0x1FFF FFFF
Option Bytes 0x1FFF C000 - 0x1FFF C00F
Reserved 0x1FFF 7A10 - 0x1FFF 7FFF
System memory 0x1FFF 0000 - 0x1FFF 7A0F APB1
Reserved 0x1FFE C008 - 0x1FFE FFFF
Option bytes 0x1FFE C000 - 0x1FFE C00F
Reserved 0x1001 0000 - 0x1FFE BFFF
Reserved 0x1000 0000 - 0x1000 FFFF

Reserved 0x0820 0000 - 0x0FFF FFFF

Flash memory 0x0800 0000 - 0x081F FFFF
Reserved 0x0020 0000 - 0x07FF FFFF
Aliased to Flash, system 0x4000 0000
memory or SRAM depending 0x0000 0000 - 0x001F FFFF
on the BOOT pins
MS33841V1

DS10693 Rev 10 65/198

69
Memory mapping STM32F446xC/E

Table 12. STM32F446xC/E register boundary addresses(1)

Bus Boundary address Peripheral

- 0xE00F FFFF - 0xFFFF FFFF Reserved

Cortex-M4 0xE000 0000 - 0xE00F FFFF Cortex-M4 internal peripherals
0xD000 0000 - 0xDFFF FFFF FMC bank 6
0xC000 0000 - 0xCFFF FFFF FMC bank 5
0xA000 2000 - 0x0xBFFF FFFF Reserved
0xA000 1000 - 0x0xA000 1FFF QuadSPI control register
AHB3 0xA000 0000 - 0xA000 0FFF FMC control register
0x9000 0000 - 0x9FFF FFFF QuadSPI
0x8000 0000 - 0x8FFF FFFF FMC bank 3
0x7000 0000 - 0x0x7FFF FFFF Reserved
0x6000 0000 - 0x6FFF FFFF FMC bank 1
- 0x5006 0C00- 0x5FFF FFFF Reserved
0x5006 0800- 0x500F 07FF Reserved
0x5005 0400 - 0x5006 07FF Reserved
AHB2 0x5005 0000 - 0x5005 03FF DCMI
0x5004 0000- 0x5004 FFFF Reserved
0x5000 0000 - 0X5003 FFFF USB OTG FS

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STM32F446xC/E Memory mapping

Table 12. STM32F446xC/E register boundary addresses(1) (continued)

Bus Boundary address Peripheral

- 0x4008 0000- 0x4FFF FFFF Reserved

0x4004 0000 - 0x4007 FFFF USB OTG HS
0x4002 BC00- 0x4003 FFFF
0x4002 B000 - 0x4002 BBFF
0x4002 9400 - 0x4002 AFFF
0x4002 9000 - 0x4002 93FF
0x4002 8C00 - 0x4002 8FFF Reserved
0x4002 8800 - 0x4002 8BFF
0x4002 8400 - 0x4002 87FF
0x4002 8000 - 0x4002 83FF
0x4002 6800 - 0x4002 7FFF
0x4002 6400 - 0x4002 67FF DMA2
0x4002 6000 - 0x4002 63FF DMA1
0X4002 5000 - 0X4002 5FFF Reserved
0x4002 4000 - 0x4002 4FFF BKPSRAM
0x4002 3C00 - 0x4002 3FFF Flash interface register
AHB1
0x4002 3800 - 0x4002 3BFF RCC
0X4002 3400 - 0X4002 37FF Reserved
0x4002 3000 - 0x4002 33FF CRC
0x4002 2C00 - 0x4002 2FFF
0x4002 2800 - 0x4002 2BFF
Reserved
0x4002 2400 - 0x4002 27FF
0x4002 2000 - 0x4002 23FF
0x4002 1C00 - 0x4002 1FFF GPIOH
0x4002 1800 - 0x4002 1BFF GPIOG
0x4002 1400 - 0x4002 17FF GPIOF
0x4002 1000 - 0x4002 13FF GPIOE
0X4002 0C00 - 0x4002 0FFF GPIOD
0x4002 0800 - 0x4002 0BFF GPIOC
0x4002 0400 - 0x4002 07FF GPIOB
0x4002 0000 - 0x4002 03FF GPIOA

DS10693 Rev 10 67/198

69
Memory mapping STM32F446xC/E

Table 12. STM32F446xC/E register boundary addresses(1) (continued)

Bus Boundary address Peripheral

- 0x4001 6C00- 0x4001 FFFF

Reserved
0x4001 6800 - 0x4001 6BFF
0x4001 5C00 - 0x4001 5FFF SAI2
0x4001 6000 - 0x4001 67FF Reserved
0x4001 5800 - 0x4001 5BFF SAI1
0x4001 5400 - 0x4001 57FF
0x4001 5000 - 0x4001 53FF Reserved
0x4001 4C00 - 0x4001 4FFF
0x4001 4800 - 0x4001 4BFF TIM11
0x4001 4400 - 0x4001 47FF TIM10
0x4001 4000 - 0x4001 43FF TIM9
0x4001 3C00 - 0x4001 3FFF EXTI
APB2 0x4001 3800 - 0x4001 3BFF SYSCFG
0x4001 3400 - 0x4001 37FF SPI4
0x4001 3000 - 0x4001 33FF SPI1
0x4001 2C00 - 0x4001 2FFF SDIO
0x4001 2400 - 0x4001 2BFF Reserved
0x4001 2000 - 0x4001 23FF ADC1 - ADC2 - ADC3
0x4001 1800 - 0x4001 1FFF Reserved
0x4001 1400 - 0x4001 17FF USART6
0x4001 1000 - 0x4001 13FF USART1
0x4001 0800 - 0x4001 0FFF Reserved
0x4001 0400 - 0x4001 07FF TIM8
0x4001 0000 - 0x4001 03FF TIM1

68/198 DS10693 Rev 10

STM32F446xC/E Memory mapping

Table 12. STM32F446xC/E register boundary addresses(1) (continued)

Bus Boundary address Peripheral

- 0x4000 8000- 0x4000 FFFF

0x4000 7C00 - 0x4000 7FFF Reserved
0x4000 7800 - 0x4000 7BFF
0x4000 7400 - 0x4000 77FF DAC
0x4000 7000 - 0x4000 73FF PWR
0x4000 6C00 - 0x4000 6FFF HDMI-CEC
0x4000 6800 - 0x4000 6BFF CAN2
0x4000 6400 - 0x4000 67FF CAN1
0x4000 6000 - 0x4000 63FF FMPI2C1
0x4000 5C00 - 0x4000 5FFF I2C3
0x4000 5800 - 0x4000 5BFF I2C2
0x4000 5400 - 0x4000 57FF I2C1
0x4000 5000 - 0x4000 53FF UART5
0x4000 4C00 - 0x4000 4FFF UART4
0x4000 4800 - 0x4000 4BFF USART3
0x4000 4400 - 0x4000 47FF USART2
0x4000 4000 - 0x4000 43FF SPDIFRX
APB1
0x4000 3C00 - 0x4000 3FFF SPI3 / I2S3
0x4000 3800 - 0x4000 3BFF SPI2 / I2S2
0x4000 3400 - 0x4000 37FF Reserved
0x4000 3000 - 0x4000 33FF IWDG
0x4000 2C00 - 0x4000 2FFF WWDG
0x4000 2800 - 0x4000 2BFF RTC & BKP Registers
0x4000 2400 - 0x4000 27FF Reserved
0x4000 2000 - 0x4000 23FF TIM14
0x4000 1C00 - 0x4000 1FFF TIM13
0x4000 1800 - 0x4000 1BFF TIM12
0x4000 1400 - 0x4000 17FF TIM7
0x4000 1000 - 0x4000 13FF TIM6
0x4000 0C00 - 0x4000 0FFF TIM5
0x4000 0800 - 0x4000 0BFF TIM4
0x4000 0400 - 0x4000 07FF TIM3
0x4000 0000 - 0x4000 03FF TIM2
1. The grey color is used for reserved boundary addresses.

DS10693 Rev 10 69/198

69
Electrical characteristics STM32F446xC/E

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ± 3σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
1.7 V VDD 3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ± 2σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 16.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 17.

Figure 16. Pin loading conditions Figure 17. Pin input voltage

MCU pin MCU pin

C = 50 pF VIN

MS19011V2 MS19010V2

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STM32F446xC/E Electrical characteristics

6.1.6 Power supply scheme

Figure 18. Power supply scheme

VBAT
Backup circuitry
VBAT = Power (OSC32K,RTC,
1.65 to 3.6V switch Wakeup logic
Backup registers,
backup RAM)

Level shifter
OUT
IO
GPIOs
Logic
IN
VCAP_1 Kernel logic
2 × 2.2 μF VCAP_2 (CPU, digital
& RAM)
VDD VDD
1/2/...11/12 Voltage
12 × 100 nF VSS regulator
+ 1 × 4.7 μF 1/2/...11/12

VDDUSB(2) BYPASS_REG Flash memory

OTG
VDDUSB(2)
FS
100 nF PHY
+ 1 μF Reset
PDR_ON controller
VDD
VDDA
VREF
VREF+
Analog:
100 nF 100 nF VREF- ADC RCs,
+ 1 μF + 1 μF PLL,..
VSSA

MSv33072V1

1. VDDA and VSSA must be connected to VDDand VSS, respectively.

2. VDDUSB is a dedicated independent USB power supply for the on-chip full-speed OTG PHY module and
associated DP/DM GPIOs. Its value is independent from the VDD and VDDA values, but must be the last
supply to be provided and the first to disappear. If VDD is different from VDDUSB and only one on-chip OTG
PHY is used, the second OTG PHY GPIOs (DP/DM) are still supplied at VDDUSB (3.3V).
3. VDDUSB is available only on WLCSP81, UFBGA144 and LQFP144 packages. For packages where VDDUSB
pin is not available, it is internally connected to VDD.
4. VCAP_2 pad is not available on LQFP64.
Caution: Each power supply pair (e.g. VDD/VSS, VDDA/VSSA) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure good operation of the
device. It is not recommended to remove filtering capacitors to reduce PCB size or cost.
This might cause incorrect operation of the device.

DS10693 Rev 10 71/198

171
Electrical characteristics STM32F446xC/E

6.1.7 Current consumption measurement

Figure 19. Current consumption measurement scheme

IDD_VBAT
VBAT

IDD
VDD

VDDA

VDDUSB

MSv36557V1

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 13, Table 14, and Table 15
may cause permanent damage to the device. These are stress ratings only and functional
operation of the device at these conditions is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability.
Device mission profile (application conditions) is compliant with JEDEC JESD47
Qualification Standard, extended mission profiles are available on demand.

Table 13. Voltage characteristics

Symbol Ratings Min Max Unit

External main supply voltage (including VDDA, VDD,

VDD–VSS –0.3 4.0
VDDUSB and VBAT)(1)
Input voltage on FT & FTf pins(2) VSS–0.3 VDD+4.0
V
Input voltage on TTa pins VSS–0.3 4.0
VIN
Input voltage on any other pin VSS–0.3 4.0
Input voltage on BOOT0 pin VSS 9.0
|VDDx| Variations between different VDD power pins - 50
mV
|VSSX VSS| Variations between all the different ground pins - 50
VESD(HBM) Electrostatic discharge voltage (human body model) see Section 6.3.15 -
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. VIN maximum value must always be respected. Refer to Table 14 for the values of the maximum allowed
injected current.

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STM32F446xC/E Electrical characteristics

Table 14. Current characteristics

Symbol Ratings Max. Unit

IVDD Total current into sum of all VDD power lines (source)(1) 240
IVSS (1)
Total current out of sum of all VSS ground lines (sink) - 240
IVDDUSB Total current into VDDUSB power line (source) 25
IVDD Maximum current into each VDD power pin (source)(1) 100
(1)
IVSS Maximum current out of each VSS ground pin (sink) - 100
Output current sunk by any I/O and control pin 25
IIO
Output current sourced by any I/Os and control pin - 25 mA
Total output current sunk by sum of all I/Os and control pins (2) 120
IIO Total output current sunk by sum of all USB I/Os 25
Total output current sourced by sum of all I/Os and control pins(2) -120
Injected current on FT, FTf, RST and B pins –5/+0(3)
IINJ(PIN)
Injected current on TTa pins ±5(4)
IINJ(PIN) Total injected current (sum of all I/O and control pins)(5) ±25
1. All main power (VDD, VDDA) and ground (VSS, VSSA) pins must always be connected to the external power supply, in the
permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count LQFP packages.
3. Positive injection is not possible on these I/Os and does not occur for input voltages lower than the specified
maximum value.
4. A positive injection is induced by VIN>VDDA while a negative injection is induced by VIN<VSS. IINJ(PIN) must
never be exceeded. Refer to Table 13 for the maximum allowed input voltage value.
5. When several inputs are submitted to a current injection, the maximum ΣIINJ(PIN) is the absolute sum of the positive and
negative injected currents (instantaneous values).

Table 15. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150 °C

TJ Maximum junction temperature 125 °C

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6.3 Operating conditions

6.3.1 General operating conditions

Table 16. General operating conditions

Symbol Parameter Conditions(1) Min Typ Max Unit

Power Scale 3 (VOS[1:0] bits in

PWR_CR register = 0x01), 0 - 120
Regulator ON, over-drive OFF
Over-
drive - 144
Power Scale 2 (VOS[1:0] bits OFF
in PWR_CR register = 0x10), 0
Regulator ON Over-
fHCLK Internal AHB clock frequency drive - 168
ON
Over-
MHz
drive - 168
Power Scale 1 (VOS[1:0] bits OFF
in PWR_CR register= 0x11), 0
Regulator ON Over-
drive - 180
ON
Over-drive OFF 0 - 42
fPCLK1 Internal APB1 clock frequency
Over-drive ON 0 - 45
Over-drive OFF 0 - 84
fPCLK2 Internal APB2 clock frequency
Over-drive ON 0 - 90

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Table 16. General operating conditions (continued)

Symbol Parameter Conditions(1) Min Typ Max Unit
(2)
VDD Standard operating voltage - 1.7 - 3.6
Analog operating voltage
1.7(2) - 2.4
(ADC limited to 1.2 M samples)
VDDA(3)(4) Must be the same potential as VDD (5)
Analog operating voltage
2.4 - 3.6
(ADC limited to 2.4 M samples)
VBAT Backup operating voltage - 1.65 - 3.6
USB supply voltage (supply USB not used 1.7 - 3.6
VDDUSB voltage for PA11,PA12, PB14
and PB15 pins) USB used 3 - 3.6

Power Scale 3 ((VOS[1:0] bits in

PWR_CR register = 0x01), 120 MHz 1.08 1.14 1.20
HCLK max frequency V

Power Scale 2 ((VOS[1:0] bits in

PWR_CR register = 0x10), 144 MHz
Regulator ON: 1.2 V internal 1.20 1.26 1.32
HCLK max frequency with over-drive
voltage on VCAP_1/VCAP_2 pins
OFF or 168 MHz with over-drive ON
V12 Power Scale 1 ((VOS[1:0] bits in
PWR_CR register = 0x11), 168 MHz
1.26 1.32 1.40
HCLK max frequency with over-drive
OFF or 180 MHz with over-drive ON
Regulator OFF: 1.2 V external Max frequency 120 MHz 1.10 1.14 1.20
voltage must be supplied from
Max frequency 144 MHz 1.20 1.26 1.32
external regulator on
VCAP_1/VCAP_2 pins(6) Max frequency 168 MHz 1.26 1.32 1.38

Input voltage on RST, FTf and 2 V VDD 3.6 V –0.3 - 5.5

FT pins(7) 1.7V VDD 2 V –0.3 - 5.2
VIN V
Input voltage on TTa pins - –0.3 - VDDA+0.3
Input voltage on BOOT0 pin - 0 - 9
LQFP64 - - 345
WLCSP81 - - 417
Power dissipation at TA = 85 °C LQFP100 - - 476
PD for suffix 6 or TA = 105 °C for mW
suffix 7(8) LQFP 144 - - 606
UFBGA144 (7x7) - - 392
UFBGA144(10x10) - - 417

Ambient temperature for 6 suffix Maximum power dissipation –40 - 85

°C
version Low power dissipation(9) –40 - 105
TA
Ambient temperature for 7 suffix Maximum power dissipation –40 - 105
°C
version Low power dissipation(9) –40 - 125
6 suffix version –40 - 105
TJ Junction temperature range °C
7 suffix version –40 - 125

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1. The over-drive mode is not supported at the voltage ranges from 1.7 to 2.1 V.
2. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.16.2:
Internal reset OFF).
3. When the ADC is used, refer to Table 74: ADC characteristics.
4. If VREF+ pin is present, it must respect the following condition: VDDA-VREF+ < 1.2 V.
5. It is recommended to power VDD and VDDA from the same source. A maximum difference of 300 mV between VDD and
VDDA can be tolerated during power-up and power-down operation.
6. The over-drive mode is not supported when the internal regulator is OFF.
7. To sustain a voltage higher than VDD+0.3, the internal Pull-up and Pull-Down resistors must be disabled
8. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax.
9. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax.

Table 17. Limitations depending on the operating power supply range

Maximum Flash
Maximum HCLK
Operating memory access Possible Flash
frequency vs Flash
power supply ADC operation frequency with I/O operation memory
memory wait states
range no wait states (1)(2) operations
(fFlashmax)

168 MHz with 8 wait 8-bit erase and

VDD =1.7 to Conversion time – No I/O
20 MHz(4) states and over-drive program
2.1 V(3) up to 1.2 Msps compensation
OFF operations only
180 MHz with 8 wait 16-bit erase and
VDD = 2.1 to Conversion time – No I/O
22 MHz states and over-drive program
2.4 V up to 1.2 Msps compensation
ON operations
180 MHz with 7 wait – I/O 16-bit erase and
VDD = 2.4 to Conversion time
24 MHz states and over-drive compensation program
2.7 V up to 2.4 Msps
ON works operations
180 MHz with 5 wait – I/O 32-bit erase and
VDD = 2.7 to Conversion time
30 MHz states and over-drive compensation program
3.6 V(5) up to 2.4 Msps
ON works operations
1. Applicable only when the code is executed from Flash memory. When the code is executed from RAM, no wait state is
required.
2. Thanks to the ART accelerator and the 128-bit Flash memory, the number of wait states given here does not impact the
execution speed from Flash memory since the ART accelerator enables to achieve a performance equivalent to 0 wait
state program execution.
3. VDD/VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.16.2:
Internal reset OFF).
4. Prefetch is not available.
5. The voltage range for USB full speed PHYs can drop down to 2.7 V. However the electrical characteristics of D- and D+
pins are degraded between 2.7 and 3 V.

6.3.2 VCAP_1 / VCAP_2 external capacitor

Stabilization for the main regulator is achieved by connecting external capacitor CEXT to the
VCAP_1 and VCAP_2 pins. For packages supporting only 1 VCAP pin, the two CEXT
capacitors are replaced by a single capacitor. CEXT is specified in Table 18.

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Figure 20. External capacitor CEXT

ESR

R Leak
MS19044V2

1. Legend: ESR is the equivalent series resistance.

Table 18. VCAP_1 / VCAP_2 operating conditions(1)

Symbol Parameter Conditions

CEXT Capacitance of external capacitor 2.2 µF

ESR ESR of external capacitor <2Ω
CEXT Capacitance of external capacitor with a single VCAP pin available 4.7 µF
ESR ESR of external capacitor with a single VCAP pin available <1Ω
1. When bypassing the voltage regulator, the two 2.2 µF VCAP capacitors are not required and can be
replaced by two 100 nF decoupling capacitors.

6.3.3 Operating conditions at power-up / power-down (regulator ON)

Subject to general operating conditions for TA.

Table 19. Operating conditions at power-up/power-down (regulator ON)

Symbol Parameter Min Max

VDD rise time rate 20 

tVDD
VDD fall time rate 20 

6.3.4 Operating conditions at power-up / power-down (regulator OFF)

Subject to general operating conditions for TA.

Table 20. Operating conditions at power-up / power-down (regulator OFF)(1)

Symbol Parameter Conditions Min Max Unit

VDD rise time rate Power-up 20 

tVDD
VDD fall time rate Power-down 20 
µs/V
VCAP_1 and VCAP_2 rise time rate Power-up 20 
tVCAP
VCAP_1 and VCAP_2 fall time rate Power-down 20 
1. To reset the internal logic at power-down, a reset must be applied on pin PA0 when VDD drops below
1.08 V.

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6.3.5 Reset and power control block characteristics

The parameters given in Table 21 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.

Table 21. reset and power control block characteristics

Symbol Parameter Conditions Min Typ Max Unit

PLS[2:0]=000 (rising edge) 2.09 2.14 2.19 V

PLS[2:0]=000 (falling edge) 1.98 2.04 2.08 V
PLS[2:0]=001 (rising edge) 2.23 2.30 2.37 V
PLS[2:0]=001 (falling edge) 2.13 2.19 2.25 V
PLS[2:0]=010 (rising edge) 2.39 2.45 2.51 V
PLS[2:0]=010 (falling edge) 2.29 2.35 2.39 V
PLS[2:0]=011 (rising edge) 2.54 2.60 2.65 V

Programmable voltage PLS[2:0]=011 (falling edge) 2.44 2.51 2.56 V

VPVD
detector level selection PLS[2:0]=100 (rising edge) 2.70 2.76 2.82 V
PLS[2:0]=100 (falling edge) 2.59 2.66 2.71 V
PLS[2:0]=101 (rising edge) 2.86 2.93 2.99 V
PLS[2:0]=101 (falling edge) 2.65 2.84 3.02 V
PLS[2:0]=110 (rising edge) 2.96 3.03 3.10 V
PLS[2:0]=110 (falling edge) 2.85 2.93 2.99 V
PLS[2:0]=111 (rising edge) 3.07 3.14 3.21 V
PLS[2:0]=111 (falling edge) 2.95 3.03 3.09 V
VPVDhyst(1) PVD hysteresis - - 100 - mV

Power-on/power-down Falling edge 1.60 1.68 1.76 V

VPOR/PDR
reset threshold Rising edge 1.64 1.72 1.80 V
VPDRhyst(1) PDR hysteresis - - 40 - mV

Brownout level 1 Falling edge 2.13 2.19 2.24 V

VBOR1
threshold Rising edge 2.23 2.29 2.33 V

Brownout level 2 Falling edge 2.44 2.50 2.56 V

VBOR2
threshold Rising edge 2.53 2.59 2.63 V

Brownout level 3 Falling edge 2.75 2.83 2.88 V

VBOR3
threshold Rising edge 2.85 2.92 2.97 V
(1)
VBORhyst BOR hysteresis - - 100 - mV
TRSTTEMPO
(1)(2) POR reset temporization - 0.5 1.5 3.0 ms

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Table 21. reset and power control block characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

InRush current on
voltage regulator power-
IRUSH(1) - - 160 200 mA
on (POR or wakeup from
Standby)
InRush energy on
(1) voltage regulator power- VDD = 1.7 V, TA = 105 °C,
ERUSH - - 5.4 µC
on (POR or wakeup from IRUSH = 171 mA for 31 µs
Standby)
1. Guaranteed based on test during characterization.
2. The reset temporization is measured from the power-on (POR reset or wakeup from VBAT) to the instant
when first instruction is read by the user application code.

6.3.6 Over-drive switching characteristics

When the over-drive mode switches from enabled to disabled or disabled to enabled, the
system clock is stalled during the internal voltage set-up.
The over-drive switching characteristics are given in Table 22. They are sbject to general
operating conditions for TA.

Table 22. Over-drive switching characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

HSI - 45 -
HSE max for 4 MHz
Over_drive switch 45 - 100
Tod_swen and min for 26 MHz
enable time
External HSE
- 40 -
50 MHz
µs
HSI - 20 -
HSE max for 4 MHz
Over_drive switch 20 - 80
Tod_swdis and min for 26 MHz.
disable time
External HSE
- 15 -
50 MHz
1. Guaranteed based on test during characterization.

6.3.7 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 19.
All the run-mode current consumption measurements given in this section are performed
with a reduced code that gives a consumption equivalent to CoreMark code.

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Typical and maximum current consumption

The MCU is placed under the following conditions:
 All I/O pins are in input mode with a static value at VDD or VSS (no load).
 All peripherals are disabled except if it is explicitly mentioned.
 The Flash memory access time is adjusted both to fHCLK frequency and VDD range
(see Table 17).
 Regulator ON
 The voltage scaling and over-drive mode are adjusted to fHCLK frequency as follows:
– Scale 3 for fHCLK 120 MHz
– Scale 2 for 120 MHz < fHCLK  144 MHz
– Scale 1 for 144 MHz < fHCLK  180 MHz. The over-drive is only ON at 180 MHz.
 The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.
 External clock frequency is 8 MHz and PLL is ON when fHCLK is higher than 16 MHz.
 Flash is enabled except if explicitly mentioned as disable.
 The maximum values are obtained for VDD = 3.6 V and a maximum ambient
temperature (TA), and the typical values for TA= 25 °C and VDD = 3.3 V unless
otherwise specified.

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Table 23. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled except prefetch) or RAM(1)
Max(2)
Symbol Parameter Conditions fHCLK (MHz) Typ Unit
TA = TA = TA =
25 °C 85 °C 105 °C

180 72 83.0(5) 100.0 110.0(5)

168 65 71.0 95.3 101.0
150 59 63.6 85.4 100.8
External clock, 144(6) 54 58.4 78.8 91.2
PLL ON, 
120 40 44.9 62.1 73.2
all peripherals
enabled(3)(4) 90 30 35.3 50.7 60.0
60 21 25.5 39.2 46.8
30 12 16.2 28.1 36.0
25 10 14.41 26.17 32.4
16 6 11.4 23.1 25.2
HSI, PLL OFF, 8 3 9.5 20.3 22.5
all peripherals
enabled 4 2.3 8.3 18.9 21.1
Supply 2 1.8 7.7 18.1 20.5
IDD current in mA
RUN mode 180 32 42.0(5) 59.0 75.0(5)
168 29 35.5 51.4 55.7
150 26 31.5 47.8 51.9
External clock, 144(6) 24 29.2 44.7 48.6
PLL ON, 
120 18 23.3 36.8 40.4
all peripherals
disabled(3) 90 14 19.0 31.8 35.1
60 10 14.7 26.9 29.9
30 6 10.7 22.1 24.9
25 5 9.96 21.24 24.02
16 3 8.7 18.9 21.9
HSI, PLL OFF, 8 2 8.1 17.8 20.9
all peripherals
disabled(3) 4 1.7 7.64 17.23 20.32
2 1.4 7.4 16.94 20.03
1. Code and data processing running from SRAM1 using boot pins.
2. Guaranteed based on test during characterization.
3. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption has
to be considered.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC
for the analog part.
5. Tested in production.
6. Overdrive OFF

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Table 24. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator enabled with prefetch) or RAM(1)
Max(2)
Symbol Parameter Conditions fHCLK (MHz) Typ Unit
TA = TA = TA =
25 °C 85 °C 105 °C

180 86 93.0 115.0 125.0

168(5) 79 85.1 111.2 117.7
150 73 79.6 104.8 111.2
External clock, 144(5) 68 73.5 97.3 103.3
PLL ON, 
120 54 59.3 79.7 84.7
all peripherals
enabled(3)(4) 90 42 47.23 65.50 70.10
60 29 33.7 49.5 53.4
30 16 20.8 34.0 37.4
25 13 18.4 31.2 34.5
16 8 13.8 25.0 28.3
HSI, PLL OFF, 8 5 10.8 21.1 24.2
all peripherals
enabled(3)(4) 4 3.0 9.1 18.9 22.0
Supply 2 2.1 8.1 17.8 20.9
IDD current in mA
Run mode 180 46 55.0 75.0 86.0
168 43 49.6 67.5 72.6
150 41 48.2 65.8 70.8
(5)
External clock, 144 38 43.6 61.9 66.8
PLL ON, 
120 32 37.3 53.7 58.0
all peripherals
disabled(3) 90 26 30.7 46.0 50.0
60 18 22.8 36.4 40.1
30 10 14.9 27.1 30.2
25 9 13.55 25.40 28.54
16 5 11.1 21.8 25.0
HSI, PLL OFF, 8 3 9.5 19.4 22.5
all peripherals
disabled(3) 4 2.4 8.34 18.10 21.17
2 1.8 7.77 17.39 20.50
1. Code and data processing running from SRAM1 using boot pins.
2. Guaranteed based on test during characterization.
3. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption
has to be considered.
4. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC
for the analog part.
5. Overdrive OFF

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Table 25. Typical and maximum current consumption in Run mode, code with data processing
running from Flash memory (ART accelerator disabled)
Max(1)
Symbol Parameter Conditions fHCLK (MHz) Typ Unit
TA = TA = TA =
25 °C 85 °C 105 °C

180 81 89.0 110.0 120.0

168(4) 74 80.2 105.7 112.0
150 69 74.9 99.5 105.6
External clock, 144(4) 63 69.3 92.4 98.1
PLL ON,
120 51 56.3 76.1 81.1
all peripherals
enabled(2)(3) 90 40 45.32 63.19 67.63
60 28 33.1 48.7 52.6
30 16 20.8 34.0 37.4
25 13 18.4 31.2 34.5
16 8 13.8 25.0 28.2
8 5 10.8 21.1 24.2
4 3.0 9.1 19.0 22.0
Supply External clock, 2 2.1 8.1 17.9 20.9
IDD current in PLL ON, mA
RUN mode 180 41 47.0 69.0 79.0
all peripherals
disabled(2)(3) 168 38 43.2 61.9 67.1
150 37 41.8 60.3 65.4
(4)
144 34 39.3 56.9 61.6
120 29 34.3 50.2 54.4
90 24 28.8 43.6 47.5
HSI, PLL OFF, 60 17 22.0 35.6 39.2
all peripherals
disabled(3) 30 10 14.8 27.0 30.1
25 8 13.51 25.36 28.47
16 5 11.1 21.8 24.9
HSI, PLL OFF, 8 3 9.5 19.4 22.5
all peripherals
disabled(3) 4 2.3 8.35 18.12 21.17
2 1.8 7.78 17.42 20.51
1. Guaranteed based on test during characterization unless otherwise specified.
2. When analog peripheral blocks such as ADCs, DACs, HSE, LSE, HSI, or LSI are ON, an additional power consumption has
to be considered.
3. When the ADC is ON (ADON bit set in the ADC_CR2 register), add an additional power consumption of 1.6 mA per ADC for
the analog part.
4. Overdrive OFF

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Table 26. Typical and maximum current consumption in Sleep mode(1)

Max
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz) TA = TA = TA =
25 °C 85 °C 105 °C

180 51.2 59.00 77.25 102.00

(2)
168 46.8 53.94 66.48 79.40
150 42.2 49.26 60.84 73.41
External
clock, 144(2) 38.6 45.37 55.47 66.96
PLL ON,
120 29.3 35.70 42.49 51.46
Flash
Supply memory 90 22.8 29.17 34.78 43.12
All
current in on
IDD peripherals 60 16.3 22.41 27.12 34.83 mA
Sleep
enabled
mode 30 10.1 16.03 19.72 26.86
25 9.0 14.92 18.41 25.38
16 6.5 13.10 15.1 22.3
HSI, PLL
off, Flash 8 5.2 12.31 13.5 20.4
memory 4 4.5 11.63 12.5 19.3
on
2 4.1 11.23 12.0 18.8

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Table 26. Typical and maximum current consumption in Sleep mode(1) (continued)
Max
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz) TA = TA = TA =
25 °C 85 °C 105 °C

180 11.36 17.59 28.2 51.6

168(2) 10.20 16.19 22.0 31.8
150 9.53 15.59 21.1 30.9
(2)
144 8.90 14.87 19.7 28.4
Flash
memory 120 7.35 13.24 16.5 23.3
on
90 6.39 12.40 15.3 21.9
60 5.28 11.17 14.1 20.7
30 4.43 10.31 13.1 19.6
25 4.23 10.12 12.85 19.30
180 8.3 13.44 30.72 37.20
(2)
168 7.3 12.25 25.16 28.80
150 6.7 11.60 24.27 27.84
External
Flash in
Supply clock,  144(2) 6.1 11.08 23.25 26.28
Deep
current in PLL on,
IDD power 120 4.7 9.64 20.95 23.72 mA
Sleep all
down
mode peripherals 90 3.8 8.80 19.77 22.57
mode
disabled
60 2.8 7.74 18.69 21.32
30 2.0 6.89 17.66 20.40
25 1.8 6.70 17.43 20.17
180 8.3 13.44 30.72 37.20
(2)
168 7.3 12.25 25.16 28.80
150 6.7 11.60 24.27 27.84
144(2) 6.1 11.08 23.25 26.28
Flash in
Stop 120 4.7 9.64 20.95 23.72
mode
90 3.8 8.80 19.77 22.57
60 2.8 7.74 18.69 21.32
30 2.0 6.89 17.66 20.40
25 1.8 6.70 17.43 20.17

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Table 26. Typical and maximum current consumption in Sleep mode(1) (continued)
Max
fHCLK
Symbol Parameter Conditions Typ Unit
(MHz) TA = TA = TA =
25 °C 85 °C 105 °C

16 3.89 4.93 11.72 18.54

Flash 8 2.45 3.29 11.66 18.46
memory
on 4 1.69 2.56 11.60 18.40
2 1.28 2.22 11.57 18.37
Flash 16 1.0 6.65 16.54 19.50
HSI, 
Supply memory
PLL off,  8 0.9 6.93 16.48 19.45
current in in Deep
IDD all mA
Sleep power 4 0.9 6.90 16.43 19.39
peripherals
mode down
disabled 2 0.9 6.88 16.41 19.37
mode
16 1.0 6.7 16.5 19.5
Flash in 8 0.9 6.9 16.5 19.5
Stop
mode 4 0.9 6.9 16.4 19.4
2 0.9 6.9 16.4 19.4
1. Guaranteed based on test during characterization unless otherwise specified.
2. Overdrive OFF

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Table 27. Typical and maximum current consumptions in Stop mode

Max
Typ
VDD = 3.6 V
Symbol Parameter Conditions Unit
TA = TA = TA = TA =
25 °C 25 °C(1) 85 °C 105 °C(1)

Flash memory in Stop mode, all

Supply current in oscillators OFF, no independent 0.234 1.2 10 16
Stop mode with watchdog
voltage regulator in Flash memory in Deep power
main regulator mode down mode, all oscillators OFF, 0.205 1 9.5 15
IDD_STOP_NM no independent watchdog
(normal
mode) Flash memory in Stop mode, all
Supply current in oscillators OFF, no independent 0.15 0.95 8.5 14
Stop mode with watchdog
voltage regulator in
Low power regulator Flash memory in Deep power
mode down mode, all oscillators OFF, 0.121 0.9 6 12
no independent watchdog mA

Supply current in
Flash memory in Deep power
Stop mode with
down mode, main regulator in
voltage regulator in 0.119 0.4 3 5
under-drive mode, all oscillators
main regulator and
OFF, no independent watchdog
IDD_STOP_UD under-drive mode
M(under- Supply current in
drive mode) Stop mode with Flash memory in Deep power
down mode, Low power
voltage regulator in
regulator in under-drive mode, 0.055 0.35 3 5
Low power regulator
all oscillators OFF, no
and under-drive
independent watchdog
mode
1. Data based on characterization, tested in production.

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Table 28. Typical and maximum current consumptions in Standby mode

Typ(1) Max(2)

TA = TA = TA =
TA = 25 °C
Symbol Parameter Conditions 25 °C 85 °C 105 °C Unit

VDD = VDD = VDD =

VDD = 3.3 V
1.7 V 2.4 V 3.3 V

Backup SRAM ON, and LSE

2.43 3.44 4.12 7 20 36
oscillator in low power mode
Backup SRAM OFF, RTC ON
and LSE oscillator in low 1.81 2.81 3.33 6 17 31
power mode
Backup SRAM ON, RTC ON
Supply and LSE oscillator in high 3.32 4.33 4.95 8 21 37
IDD_STBY current in drive mode µA
Standby mode Backup SRAM OFF, RTC ON
and LSE oscillator in high 2.57 3.59 4.16 7 18 32
drive mode
Backup SRAM ON, RTC and
2.03 2.73 3.5 6(3) 19 35(3)
LSE OFF
Backup SRAM OFF, RTC
1.28 1.97 2.03 5(3) 16 30(3)
and LSE OFF
1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA.
2. Guaranteed based on test during characterization unless otherwise specified.
3. Tested in production.

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Table 29. Typical and maximum current consumptions in VBAT mode

Typ Max(2)

TA = TA =
TA = 25 °C
85 °C 105 °C
Symbol Parameter Conditions(1) Unit
VBAT VBAT VBAT
= = = VBAT = 3.6 V
1.7 V 2.4 V 3.3 V

Backup SRAM ON, RTC ON

and LSE oscillator in low power 1.46 1.62 1.83 6 11
mode
Backup SRAM OFF, RTC ON
and LSE oscillator in low power 0.72 0.85 1.00 3 5
mode

Backup Backup SRAM ON, RTC ON

domain and LSE oscillator in high drive 2.24 2.40 2.64 - -
IDD_VBAT mode µA
supply
current Backup SRAM OFF, RTC ON
and LSE oscillator in high drive 1.50 1.64 1.86 - -
mode
Backup SRAM ON, RTC and
0.74 0.75 0.78 5 10
LSE OFF
Backup SRAM OFF, RTC and
0.05 0.05 0.05 2 4
LSE OFF
1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values.
2. Guaranteed based on test during characterization.

Figure 21. Typical VBAT current consumption

(RTC ON/backup RAM OFF and LSE in low power mode)

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Figure 22. Typical VBAT current consumption

(RTC ON/backup RAM OFF and LSE in high drive mode)

Additional current consumption

The MCU is placed under the following conditions:
 All I/O pins are configured in analog mode.
 The Flash memory access time is adjusted to fHCLK frequency.
 The voltage scaling is adjusted to fHCLK frequency as follows:
– Scale 3 for fHCLK ≤ 120 MHz,
– Scale 2 for 120 MHz < fHCLK ≤ 144 MHz
– Scale 1 for 144 MHz < fHCLK ≤ 180 MHz. The over-drive is only ON at 180 MHz.
 The system clock is HCLK, fPCLK1 = fHCLK/4, and fPCLK2 = fHCLK/2.
 HSE crystal clock frequency is 8 MHz.
 Flash is enabled except if explicitly mentioned as disable.
 When the regulator is OFF, V12 is provided externally as described in Table 16:
General operating conditions
 TA= 25 °C.

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Table 30. Typical current consumption in Run mode, code with data processing
running from Flash memory or RAM, regulator ON
(ART accelerator enabled except prefetch), VDD = 1.7 V(1)
Max
Symbol Parameter Conditions fHCLK (MHz) Typ Unit
TA = TA = TA =
25 °C 85 °C 105 °C

168 65.11 70.0 79.7 90.0

150 58.31 62.8 73.4 79.9
144 53.14 57.1 69.9 75.3

All peripherals 120 39.58 47.2 60.7 71.4

enabled 90 29.99 34.70 45.23 49.34
60 20.37 25.2 35.2 38.2
30 11.37 12.9 28.4 33.2
Supply current in 25 9.65 10.9 17.8 24.3
IDD Run mode from mA
VDD supply 168 29.74 32.43 42.4 48.5
150 25.81 29.12 39.4 43.8
144 24.57 26.61 36.0 41.9

All peripherals 120 17.69 22.09 32.9 40.8

disabled 90 13.58 15.92 30.0 36.5
60 9.41 11.05 24.4 30.2
30 5.44 6.64 15.0 22.0
25 4.73 5.72 12.57 19.06
1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,
or DAC) is not included.

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Table 31. Typical current consumption in Run mode, code with data processing
running from Flash memory, regulator OFF (ART accelerator enabled except prefetch)(1)
VDD = 3.3 V VDD = 1.7 V
fHCLK
Symbol Parameter Conditions Unit
(MHz)
IDD12 IDD IDD12 IDD

168 61.72 1.6 60.15 1.5

150 51.69 1.5 55.46 1.4
144 51.45 1.5 50.94 1.3

All peripherals 120 38.94 1.3 40.66 1.2

enabled 90 29.48 1.1 28.18 1.0
60 19.23 1.0 20.05 0.8
30 10.41 0.9 11.26 0.7
Supply current in
Run mode from 25 8.83 0.8 9.56 0.6
IDD12 / IDD mA
V12 and VDD 168 31.44 1.6 30.06 1.5
supply
150 28.67 1.5 27.38 1.4
144 25.51 1.5 23.37 1.3

All peripherals 120 19.06 1.3 21.73 1.2

disabled 90 14.83 1.2 14.74 1.0
60 10.16 1.0 10.30 0.8
30 5.41 0.9 5.64 0.7
25 4.599 0.8 4.80 0.6
1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,
or DAC) is not included.

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Table 32. Typical current consumption in Sleep mode, regulator ON, VDD = 1.7 V(1)
Max
Symbol Parameter Conditions fHCLK (MHz) Typ Unit
TA = TA = TA =
25 °C 85 °C 105 °C

168 43.7 47.5 66.5 79.3

150 39.2 42.7 60.7 73.3
144 35.7 38.8 55.3 66.9
All peripherals 120 26.5 28.6 41.8 51.6
enabled, Flash
memory on 90 20.0 21.91 33.85 43.20
60 13.6 15.2 25.8 34.9
30 7.4 8.5 18.4 27.0
Supply current in 25 6.3 7.5 16.9 25.5
IDD Sleep mode from mA
VDD supply 168 7.3 8.6 21.2 31.9
150 6.6 7.94 20.4 31.0
144 6.0 7.3 18.6 28.5
All peripherals 120 4.6 5.5 14.9 23.4
disabled, Flash
memory on 90 3.6 4.6 13.6 22.1
60 2.6 3.4 12.5 20.8
30 1.8 2.7 11.3 19.7
25 1.6 2.49 11.09 19.42
1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,
or DAC) is not included.

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Table 33. Typical current consumption in Sleep mode, regulator OFF(1)

VDD = 3.3 V VDD = 1.7 V Unit
Symbol Parameter Conditions fHCLK (MHz)
IDD12 IDD IDD12 IDD -

180 47.605 1.2 NA NA

168 44.35 1.0 41.53 0.8
150 40.58 0.9 39.96 0.8
144 35.68 0.9 34.60 0.7
All peripherals
120 27.30 0.9 29.11 0.7
enabled
90 20.69 0.8 19.78 0.6
60 13.88 0.7 13.36 0.6
30 7.66 0.7 7.85 0.6
Supply current
in Sleep mode 25 6.49 0.7 6.66 0.5
IDD12/IDD mA
from V12 and 180 8.71 1.2 NA NA
VDD supply
168 7.00 0.9 8.42 0.8
150 6.88 0.9 7.61 0.8
144 6.29 0.9 6.99 0.7
All peripherals
120 4.87 0.9 5.95 0.7
disabled
90 3.78 0.8 3.96 0.6
60 2.66 0.7 2.80 0.6
30 1.65 0.7 1.74 0.6
25 1.45 0.7 1.52 0.5
1. When peripherals are enabled, the power consumption corresponding to the analog part of the peripherals (such as ADC,
or DAC) is not included.

I/O system current consumption

The current consumption of the I/O system has two components: static and
dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 56: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.

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Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption (see Table 35), the I/Os used by
an application also contribute to the current consumption. When an I/O pin switches, it uses
the current from the MCU supply voltage to supply the I/O pin circuitry and to
charge/discharge the capacitive load (internal or external) connected to the pin:

I SW = V DD  f SW  C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the MCU supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

Table 34. Switching output I/O current consumption(1)

I/O toggling
Symbol Parameter Conditions Typ Unit
frequency (fsw)

2 MHz 0.0
8 MHz 0.2
25 MHz 0.6
VDD = 3.3 V
50 MHz 1.1
C= CINT(2)
60 MHz 1.3
84 MHz 1.8

I/O switching 90 MHz 1.9

IDDIO mA
current 2 MHz 0.1
8 MHz 0.4

VDD = 3.3 V 25 MHz 1.23

CEXT = 0 pF 50 MHz 2.43
C = CINT + CEXT + CS 60 MHz 2.93
84 MHz 3.86
90 MHz 4.07

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Table 34. Switching output I/O current consumption(1) (continued)

I/O toggling
Symbol Parameter Conditions Typ Unit
frequency (fsw)

2 MHz 0.18
8 MHz 0.67

VDD = 3.3 V 25 MHz 2.09

CEXT = 10 pF 50 MHz 3.6
C = CINT + CEXT + CS 60 MHz 4.5
84 MHz 7.8
90 MHz 9.8

I/O switching 2 MHz 0.26

IDDIO mA
current 8 MHz 1.01
VDD = 3.3 V
CEXT = 22 pF 25 MHz 3.14
C = CINT + CEXT + CS 50 MHz 6.39
60 MHz 10.68
2 MHz 0.33
VDD = 3.3 V
8 MHz 1.29
CEXT = 33 pF
25 MHz 4.23
C = CINT + Cext + CS
50 MHz 11.02
1. CS is the PCB board capacitance including the pad pin. CS = 7 pF (estimated value).
2. This test is performed by cutting the LQFP144 package pin (pad removal).

On-chip peripheral current consumption

The MCU is placed under the following conditions:
 At startup, all I/O pins are in analog input configuration.
 All peripherals are disabled unless otherwise mentioned.
 HCLK is the system clock. fPCLK1 = fHCLK / 4, and fPCLK2 = fHCLK / 2.
The given value is calculated by measuring the difference of current consumption
– with all peripherals clocked off
– with only one peripheral clocked on
– fHCLK = 180 MHz (Scale1 + over-drive ON), fHCLK = 144 MHz (Scale 2),
fHCLK = 120 MHz (Scale 3)"
 Ambient operating temperature is 25 °C and VDD = 3.3 V.

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Table 35. Peripheral current consumption

IDD (typ.)
Peripheral Unit
Scale 1 +
Scale 2 Scale 3
OverDrive

GPIOA 2.29 2.14 1.89

GPIOB 2.29 2.13 1.89
GPIOC 2.33 2.17 1.93
GPIOD 2.34 2.19 1.94
GPIOE 2.39 2.19 1.93
GPIOF 2.31 2.14 1.91
AHB1 GPIOG 2.36 2.19 1.94 µA/MHz
GPIOH 2.13 1.98 1.75
CRC 0.53 0.51 0.46
BKPSRAM 0.76 0.72 0.65
DMA1(1) 2.39N + 4.13 2.23N+3.56 1.97N+3.51
DMA2(1) 2.39N + 4.45 2.19N+3.72 2.00N+3.66
OTG_HS+ULPI 45.45 42.08 37.28
DCMI 3.74 3.42 3.01
AHB2 µA/MHz
OTGFS 30.04 27.88 24.69
FMC 16.15 15.01 13.33
AHB3 µA/MHz
QSPI 16.78 15.60 13.84

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Table 35. Peripheral current consumption (continued)

IDD (typ.)
Peripheral Unit
Scale 1 +
Scale 2 Scale 3
OverDrive

TIM2 18.18 16.92 15.07

TIM3 14.49 13.47 12.00
TIM4 15.18 14.11 12.50
TIM5 16.91 15.69 14.07
TIM6 2.69 2.47 2.20
TIM7 2.56 2.44 2.17
TIM12 7.07 6.56 5.83
TIM13 4.96 4.64 4.07
TIM14 5.09 4.72 4.27
WWDG 1.07 1.00 0.93
(2)
SPI2 1.89 1.78 1.57
SPI3(2) 1.93 1.81 1.67
APB1 SPDIFRX 6.91 6.44 5.80 µA/MHz
USART2 4.20 3.83 3.40
USART3 4.22 3.94 3.50
UART4 4.13 3.89 3.40
UART5 4.04 3.78 3.33
I2C1 3.98 3.69 3.33
I2C2 3.91 3.61 3.17
I2C3 3.76 3.53 3.13
FMPI2C1 5.51 5.19 4.57
CAN1 6.58 6.14 5.43
CAN2 5.91 5.56 4.90
CEC 0.71 0.69 0.60
DAC 2.96 2.72 2.40

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Table 35. Peripheral current consumption (continued)

IDD (typ.)
Peripheral Unit
Scale 1 +
Scale 2 Scale 3
OverDrive

TIM1 17.51 16.28 14.43

TIM8 18.40 17.10 15.22
USART1 4.53 4.21 3.72
USART6 4.53 4.21 3.72
ADC1 4.69 4.35 3.85
ADC2 4.70 4.35 3.87
ADC3 4.66 4.31 3.82
SDIO 9.06 8.38 7.47
APB2
SPI1 1.97 1.89 1.67 µA/MHz
SPI4 1.88 1.75 1.57
SYSCFG 1.51 1.40 1.23
TIM9 8.17 7.64 6.77
TIM10 5.07 4.75 4.22
TIM11 5.37 5.06 4.50
SAI1 3.89 3.64 3.17
SAI2 3.74 3.49 3.10
Bus Matrix 8.15 8.10 7.13
1. N = Number of strean enable (1..8)
2. To enable an I2S peripheral, first set the I2SMOD bit and then the I2SE bit in the SPI_I2SCFGR register.

6.3.8 Wakeup time from low-power modes

The wakeup times given in Table 36 are measured starting from the wakeup event trigger up
to the first instruction executed by the CPU:
 For Stop or Sleep modes: the wakeup event is WFE.
 WKUP (PA0) pin is used to wakeup from Standby, Stop and Sleep modes.
All timings are derived from tests performed under ambient temperature and VDD = 3.3 V.

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Table 36. Low-power mode wakeup timings

Symbol Parameter Conditions Typ(1) Max(1) Unit

CPU
tWUSLEEP(2) Wakeup from Sleep - 6 6 clock
cycle
Wakeup from Sleep
(1) with Flash memory in
TWUSLEEPFDSM - 33.5 50
Deep power down
mode
Main regulator is ON 12.8 15

Main regulator is ON and Flash

104.9 115
memory in Deep power down mode
Wakeup from Stop
mode with MR/LP
tWUSTOP(2)
regulator in normal
mode Low power regulator is ON 20.6 28

Low power regulator is ON and µs

Flash memory in Deep power down 112.8 120
mode

Main regulator in under-drive mode

(Flash memory in Deep power- 110 140
Wakeup from Stop down mode)
mode with MR/LP
tWUSTOP(2)
regulator in Under-drive Low power regulator in under-drive
mode mode
114.4 128
(Flash memory in Deep power-
down mode)
Wakeup from Standby
tWUSTDBY(2)(3) - 325 400
mode
1. Guaranteed based on test during characterization.
2. The wakeup times are measured from the wakeup event to the point in which the application code reads the first
instruction.
3. tWUSTDBY maximum value is given at –40 °C.

6.3.9 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 56: I/O static characteristics. However, the
recommended clock input waveform is shown in Figure 23.
The characteristics given in Table 37 result from tests performed using an high-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 16.

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Table 37. High-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

External user clock source

fHSE_ext 1 - 50 MHz
frequency(1)
VHSEH OSC_IN input pin high level voltage 0.7VDD - VDD
V
VHSEL OSC_IN input pin low level voltage VSS - 0.3VDD
-
tw(HSE)
OSC_IN high or low time(1) 5 - -
tw(HSE)
ns
tr(HSE) (1)
OSC_IN rise or fall time - - 10
tf(HSE)
Cin(HSE) OSC_IN input capacitance(1) - - 5 - pF
DuCy(HSE) Duty cycle - 45 - 55 %
VSS VIN 
IL OSC_IN Input leakage current - - ±1 µA
VDD
1. Guaranteed by design.

Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard I/O. The
external clock signal has to respect the Table 56: I/O static characteristics. However, the
recommended clock input waveform is shown in Figure 24.
The characteristics given in Table 38 result from tests performed using an low-speed
external clock source, and under ambient temperature and supply voltage conditions
summarized in Table 16.

Table 38. Low-speed external user clock characteristics

Symbol Parameter Conditions Min Typ Max Unit

User External clock source

fLSE_ext - 32.768 1000 kHz
frequency(1)
OSC32_IN input pin high level
VLSEH 0.7VDD - VDD
voltage V
VLSEL OSC32_IN input pin low level voltage - VSS - 0.3VDD
tw(LSE)
OSC32_IN high or low time(1) 450 - -
tf(LSE)
ns
tr(LSE)
OSC32_IN rise or fall time(1) - - 200
tf(LSE)
Cin(LSE) OSC32_IN input capacitance(1) - - 5 - pF
DuCy(LSE) Duty cycle - 30 - 70 %
IL OSC32_IN Input leakage current VSS VIN VDD - - ±1 µA
1. Guaranteed by design.

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Figure 23. High-speed external clock source AC timing diagram

VHSEH
90 %
10 %
VHSEL
tr(HSE) tf(HSE) tW(HSE) tW(HSE) t

THSE

External fHSE_ext
IL
clock source OSC_IN
STM32F

ai17528

Figure 24. Low-speed external clock source AC timing diagram

VLSEH
90%
10%
VLSEL
tr(LSE) tf(LSE) tW(LSE) tW(LSE) t

TLSE

External fLSE_ext
OSC32_IN IL
clock source
STM32F

ai17529

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 26 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 39. In
the application, the resonator and the load capacitors have to be placed as close as
possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).

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Table 39. HSE 4-26 MHz oscillator characteristics (1)

Symbol Parameter Conditions Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 - 26 MHz

RF Feedback resistor - - 200 - k
VDD=3.3 V,
ESR= 30 Ω, - 450 -
CL=5 pF@25 MHz
IDD HSE current consumption µA
VDD=3.3 V,
ESR= 30 Ω, - 530 -
CL=10 pF@25 MHz
ACCHSE(2) HSE accuracy - -500 - 500 ppm
Gm_crit_max Maximum critical crystal gm Startup - - 1 mA/V
(3)
tSU(HSE Startup time VDD is stabilized - 2 - ms
1. Guaranteed by design.
2. This parameter depends on the crystal used in the application. The minimum and maximum values must
be respected to comply with USB standard specifications.
3. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is Guaranteed based on test during characterization. It is measured for a
standard crystal resonator and it can vary significantly with the crystal manufacturer.

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 25 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 25). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 25. Typical application with an 8 MHz crystal

Resonator with
integrated capacitors
CL1
OSC_IN fHSE
Bias
8 MHz RF controlled
resonator
gain

REXT(1) OSC_OU T STM32F

CL2
ai17530

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal/ceramic resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on
characterization results obtained with typical external components specified in Table 40. In
the application, the resonator and the load capacitors have to be placed as close as

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possible to the oscillator pins in order to minimize output distortion and startup stabilization
time. Refer to the crystal resonator manufacturer for more details on the resonator
characteristics (frequency, package, accuracy).

Table 40. LSE oscillator characteristics (fLSE = 32.768 kHz) (1)

Symbol Parameter Conditions Min Typ Max Unit

RF Feedback resistor - - 18.4 - M

IDD LSE current consumption - - - 1 µA
(2)
ACCLSE LSE accuracy - -500 - 500 ppm

Maximum critical crystal Startup low-power mode - - 0.56

Gm_crit_max µA/V
gm Startup high-drive mode - - 1.5
tSU(LSE)(3) startup time VDD is stabilized - 2 - s
1. Guaranteed by design.
2. This parameter depends on the crystal used in the application. Refer to application note AN2867.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is guaranteed based on test during characterization. It is
measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 26. Typical application with a 32.768 kHz crystal

Resonator with
integrated capacitors
CL1
OSC32_IN fLSE
Bias
32.768 kH z RF controlled
resonator
gain
OSC32_OU T STM32F
CL2
ai17531

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6.3.10 Internal clock source characteristics

The parameters given in Table 41 and Table 42 are derived from tests performed under
ambient temperature and VDD supply voltage conditions summarized in Table 16.

High-speed internal (HSI) RC oscillator

Table 41. HSI oscillator characteristics (1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI Frequency - - 16 - MHz

User-trimmed with the RCC_CR
- - 1 %
register(2)
Accuracy of the HSI T = - 40 to 105 °C(3) -8 - 4.5 %
ACCHSI A
oscillator
TA = - 10 to 85 °C(3) -4 - 4 %
TA = 25 °C(4) -1 - 1 %
HSI oscillator
tsu(HSI)(2) - - 2.2 4 µs
startup time
HSI oscillator
IDD(HSI)(2) - - 60 80 µA
power consumption
1. VDD = 3.3 V, PLL off, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed by design.
3. Guaranteed based on test during characterization.
4. Factory calibrated, parts not soldered.

Figure 27. LACCHSI versus temperature

0.06

0.04

0.02
ACCHSI

0
-40 0 25 5 8 105 125 TA (°C)
-0.02

-0.04
Min
Max
-0.06 Typical
-0.08

MS30492V1

1. Guaranteed based on test during characterization.

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Low-speed internal (LSI) RC oscillator

Table 42. LSI oscillator characteristics (1)

Symbol Parameter Min Typ Max Unit

fLSI(2) Frequency 17 32 47 kHz

(3)
tsu(LSI) LSI oscillator startup time - 15 40 µs
IDD(LSI) (3) LSI oscillator power consumption - 0.4 0.6 µA
1. VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.
2. Guaranteed based on test during characterization..
3. Guaranteed by design.

Figure 28. ACCLSI versus temperature

50
max
40 avg
min
30
Normalized deviati on (%)

20

10

-10

-20

-30

-40
-45 -35 -25 -15 -5 5 15 25 35 45 55 65 75 85 95 105
Temperat ure (°C)

MS19013V1

6.3.11 PLL characteristics

The parameters given in Table 43 and Table 44 are derived from tests performed under
temperature and VDD supply voltage conditions summarized in Table 16.

Table 43. Main PLL characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN PLL input clock(1) - 0.95(2) 1 2.10 MHz

PLL multiplier output
fPLL_OUT - 12.5 - 180 MHz
clock
48 MHz PLL multiplier
fPLL48_OUT - - 48 75 MHz
output clock
fVCO_OUT PLL VCO output - 100 - 432 MHz

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Table 43. Main PLL characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

VCO frequency = 100 MHz 75 - 200

tLOCK PLL lock time µs
VCO frequency = 432 MHz 100 - 300
RMS - 25 -
Cycle-to-cycle jitter Peak to
- 150 -
System clock peak
120 MHz RMS - 15 -
Jitter(3) ps
Period Jitter Peak to
- 200 -
peak
Cycle to cycle at 1 MHz on
Bit Time CAN jitter - 330 -
1000 samples
PLL power consumption VCO frequency = 100 MHz 0.15 0.40
IDD(PLL)(4) - mA
on VDD VCO frequency = 432 MHz 0.45 0.75

PLL power consumption VCO frequency = 100 MHz 0.30 0.40

IDDA(PLL)(4) - mA
on VDDA VCO frequency = 432 MHz 0.55 0.85
1. Use the appropriate division factor M (each PLL has its own) to obtain the specified PLL input clock values.
2. Guaranteed by design.
3. The use of PLLs in parallel can degrade the jitter up to +30%.
4. Guaranteed based on test during characterization.

Table 44. PLLI2S (audio PLL) characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLLI2S_IN PLLI2S input clock(1) - 0.95(2) 1 2.10 MHz

fPLLI2S_OUT PLLI2S multiplier output clock - - - 216 MHz
fVCO_OUT PLLI2S VCO output - 100 - 432 MHz
VCO frequency = 100 MHz 75 - 200
tLOCK PLLI2S lock time µs
VCO frequency = 432 MHz 100 - 300
Cycle to cycle at RMS - 90 - -
12.288 MHz on
48 KHz period, Peak to
- 280 - ps
N = 432, R = 5 peak
Master I2S clock jitter
Average frequency of
Jitter(3) 12.288 MHz
- 90 - ps
N = 432, R = 5
on 1000 samples
Cycle to cycle at 48 KHz
WS I2S clock jitter - 400 - ps
on 1000 samples

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Table 44. PLLI2S (audio PLL) characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

PLLI2S power consumption on VCO frequency = 100 MHz 0.15 0.40

IDD(PLLI2S)(4) - mA
VDD VCO frequency = 432 MHz 0.45 0.75
PLLI2S power consumption on VCO frequency = 100 MHz 0.30 0.40
IDDA(PLLI2S)(4) - mA
VDDA VCO frequency = 432 MHz 0.55 0.85
1. Take care of using the appropriate division factor M to have the specified PLL input clock values.
2. Guaranteed by design.
3. Value given with main PLL running.
4. Guaranteed based on test during characterization.

Table 45. PLLSAI characteristics

Symbol Parameter Conditions Min Typ Max Unit

fPLLSAI_IN PLLSAI input clock(1) - 0.95(2) 1 2.10 MHz

fPLLSAI_OUT PLLSAI multiplier output clock - - - 216 MHz
fVCO_OUT PLLSAI VCO output - 100 - 432 MHz
VCO frequency = 100 MHz 75 - 200
tLOCK PLLSAI lock time µs
VCO frequency = 432 MHz 100 - 300
Cycle to cycle at RMS - 90 - -
12.288 MHz on
48 KHz period, Peak to
- 280 - ps
N = 432, R = 5 peak
Main SAI clock jitter
Average frequency of
(3)
Jitter 12.288 MHz
- 90 - ps
N = 432, R = 5
on 1000 samples
Cycle to cycle at 48 KHz
FS clock jitter - 400 - ps
on 1000 samples
PLLSAI power consumption VCO frequency = 100 MHz 0.15 0.40
IDD(PLLSAI)(4) - mA
on VDD VCO frequency = 432 MHz 0.45 0.75

PLLSAI power consumption VCO frequency = 100 MHz 0.30 0.40

IDDA(PLLSAI)(4) - mA
on VDDA VCO frequency = 432 MHz 0.55 0.85
1. Take care of using the appropriate division factor M to have the specified PLL input clock values.
2. Guaranteed by design.
3. Value given with main PLL running.
4. Guaranteed based on test during characterization.

6.3.12 PLL spread spectrum clock generation (SSCG) characteristics

The spread spectrum clock generation (SSCG) feature reduces electromagnetic
interferences (see Table 52: EMI characteristics). It is available only on the main PLL.

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Table 46. SSCG parameters constraint

Symbol Parameter Min Typ Max(1) Unit

fMod Modulation frequency - - 10 KHz

md Peak modulation depth 0.25 - 2 %
15
MODEPER * INCSTEP - - - 2 1 -
1. Guaranteed by design.

Equation 1
The frequency modulation period (MODEPER) is given by the equation below:
MODEPER = round  f PLL_IN   4  f Mod  

fPLL_IN and fMod must be expressed in Hz.

As an example:
If fPLL_IN = 1 MHz, and fMOD = 1 kHz, the modulation depth (MODEPER) is given by
equation 1:
6 3
MODEPER = round  10   4  10   = 250

Equation 2
The increment step (INCSTEP) can be calculated with Equation 2:
15
INCSTEP = round    2 – 1   md  PLLN    100  5  MODEPER  

fVCO_OUT must be expressed in MHz.

With a modulation depth (md) = ±2 % (4 % peak to peak), and PLLN = 240 (in MHz):
15
INCSTEP = round    2 – 1   2  240    100  5  250   = 126md(quantitazed)%

An amplitude quantization error may be generated because the linear modulation profile is
obtained by taking the quantized values (rounded to the nearest integer) of MODPER and
INCSTEP. As a result, the achieved modulation depth is quantized. The percentage
quantized modulation depth is given by the following formula:
15
md quantized % =  MODEPER  INCSTEP  100  5     2 – 1   PLLN 

As a result:
15
md quantized % =  250  126  100  5     2 – 1   240  = 2.002%(peak)

Figure 29 and Figure 30 show the main PLL output clock waveforms in center spread and
down spread modes, where:
F0 is fPLL_OUT nominal.
Tmode is the modulation period.
md is the modulation depth.

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Figure 29. PLL output clock waveforms in center spread mode

Frequency (PLL_OUT)

md
F0
md

Time
tmode 2xtmode
ai17291

Figure 30. PLL output clock waveforms in down spread mode

Frequency (PLL_OUT)

F0
2xmd

Time
tmode 2xtmode
ai17292b

6.3.13 Memory characteristics

Flash memory
The characteristics are given at TA = - 40 to 105 °C unless otherwise specified.
The devices are shipped to customers with the Flash memory erased.

Table 47. Flash memory characteristics

Symbol Parameter Conditions Min Typ Max Unit

Write / Erase 8-bit mode, VDD = 1.7 V - 5 -

IDD Supply current Write / Erase 16-bit mode, VDD = 2.1 V - 8 - mA
Write / Erase 32-bit mode, VDD = 3.3 V - 12 -

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Table 48. Flash memory programming

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

Program/erase parallelism
tprog Word programming time - 16 100 µs
(PSIZE) = x 8/16/32
Program/erase parallelism
- 400 800
(PSIZE) = x 8
Program/erase parallelism
tERASE16KB Sector (16 KB) erase time - 300 600 ms
(PSIZE) = x 16
Program/erase parallelism
- 250 500
(PSIZE) = x 32
Program/erase parallelism
- 1200 2400
(PSIZE) = x 8
Program/erase parallelism
tERASE64KB Sector (64 KB) erase time - 700 1400 ms
(PSIZE) = x 16
Program/erase parallelism
- 550 1100
(PSIZE) = x 32
Program/erase parallelism
- 2 4
(PSIZE) = x 8
Program/erase parallelism
tERASE128KB Sector (128 KB) erase time - 1.3 2.6 s
(PSIZE) = x 16
Program/erase parallelism
- 1 2
(PSIZE) = x 32
Program/erase parallelism
- 8 16
(PSIZE) = x 8
Program/erase parallelism
tME Mass erase time - 5.5 11 s
(PSIZE) = x 16
Program/erase parallelism
- 8 16
(PSIZE) = x 32
32-bit program operation 2.7 - 3.6 V
Vprog Programming voltage 16-bit program operation 2.1 - 3.6 V
8-bit program operation 1.7 - 3.6 V
1. Guaranteed based on test during characterization.

Table 49. Flash memory programming with VPP

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

tprog Double word programming - 16 100 µs

tERASE16KB Sector (16 KB) erase time TA0 to +40 °C - 230 -
tERASE64KB Sector (64 KB) erase time VDD = 3.3 V - 490 - ms
tERASE128KB Sector (128 KB) erase time VPP = 8.5 V - 875 -
tME Mass erase time - 3.5 - s
Vprog Programming voltage - 2.7 - 3.6 V

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Table 49. Flash memory programming with VPP (continued)

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

VPP VPP voltage range - 7 - 9 V

Minimum current sunk on
IPP - 10 - - mA
the VPP pin
Cumulative time during
tVPP(2) - - - 1 hour
which VPP is applied
1. Guaranteed by design.
2. VPP should only be connected during programming/erasing.

Table 50. Flash memory endurance and data retention

Value
Symbol Parameter Conditions Unit
Min(1)

TA = –40 to +85 °C (suffix versions 6)

NEND Endurance 10 Kcycles
TA = –40 to +105 °C (suffix versions 7)
1 kcycle(2) at TA = 85 °C 30
tRET (2)
Data retention 1 kcycle at TA = 105 °C 10 Year
10 kcycles(2) at TA = 55 °C 20
1. Guaranteed based on test during characterization.
2. Cycling performed over the whole temperature range.

6.3.14 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling two LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs.
 Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
 FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant
with the IEC 61000-4-4 standard.
A device reset enables resuming normal operation.
The test results are given in Table 51. They are based on the EMS levels and classes
defined in AN1709 EMC design guide for STM8, STM32 and Legacy MCUs, available on
www.st.com.

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Table 51. EMS characteristics

Symbol Parameter Conditions Level/Class

VDD 3.3 V, LQFP144, 

Voltage limits to be applied on any I/O pin
VFESD TA = +25 °C, fHCLK = 168 MHz, 2B
to induce a functional disturbance
conforms to IEC 61000-4-2
Fast transient voltage burst limits to be VDD3.3 V, LQFP144, 
VEFTB applied through 100 pF on VDD and VSS TA = +25 °C, fHCLK = 168 MHz, 4B
pins to induce a functional disturbance conforms to IEC 61000-4-2

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. Good EMC performance is highly
dependent on the user application and the software in particular. It is therefore
recommended that the user applies EMC software optimization and prequalification tests in
relation with the EMC level requested for the application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
 Corrupted program counter
 Unexpected reset
 Critical data corruption (control registers...)
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see AN1015 Software techniques for improving
microcontrollers EMC performance, available on www.st.com).

Electromagnetic interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application,
executing EEMBC code, is running. This emission test is compliant with SAE IEC61967-2
standard which specifies the test board and the pin loading.

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Table 52. EMI characteristics

Max vs.
Monitored [fHSE/fCPU]
Symbol Parameter Conditions Unit
frequency band
8/180 MHz

0.1 to 30 MHz 11
VDD = 3.3 V, TA = 25 °C, LQFP144
package, conforming to SAE J1752/3 30 to 130 MHz 10 dBµV
EEMBC, ART ON, all peripheral clocks 130 MHz to 1GHz 11
enabled, clock dithering disabled.
SAE EMI Level 3 -
SEMI Peak level
0.1 to 30 MHz 24
VDD 3.3 V, TA 25 °C, LQFP144
package, conforming to SAE J1752/3 30 to 130 MHz 25 dBµV
EEMBC, ART ON, all peripheral clocks 130 MHz to 1GHz 20
enabled, clock dithering enabled
SAE EMI level 4 -

6.3.15 Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.

Table 53. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

Electrostatic
VESD(HBM) discharge voltage TA + 25 °C conforming to ANSI/JEDEC JS-001 2 2000
(human body model)
TA + 25 °C conforming to ANSI/ESD STM5.3.1,
C4 500 V
Electrostatic LQFP64, LQFP100, WLCSP81 packages
VESD(CDM) discharge voltage TA + 25 °C conforming to ANSI/ESD STM5.3.1,
(charge device model) LQFP144, UFBGA144 (7 x 7), UFBGA144 (10 x 10) C3 250
packages
1. Guaranteed based on test during characterization.

Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
 A supply overvoltage is applied to each power supply pin
 A current injection is applied to each input, output and configurable I/O pin

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These tests are compliant with EIA/JESD 78A IC latchup standard.

Table 54. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA +105 °C conforming to JESD78A II level A

6.3.16 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDD (for standard, 3 V-capable I/O pins) should be avoided during normal product
operation. However, in order to give an indication of the robustness of the microcontroller in
cases when abnormal injection accidentally happens, susceptibility tests are performed on a
sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (>5
LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out of –
5 µA/+0 µA range), or other functional failure (for example reset, oscillator frequency
deviation).
Negative induced leakage current is caused by negative injection and positive induced
leakage current by positive injection.
The test results are given in Table 55.

Table 55. I/O current injection susceptibility(1)

Functional susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on BOOT0 pin –0 NA

Injected current on NRST pin –0 NA
Injected current on PE2, PE3,PE4, PE5, PE6, PC13, PC14,
IINJ PF10, PH0, PH1, NRST, PC0, PC1, PC2, PC3, PG15, PB3, –0 NA mA
PB4, PB5, PB6, PB7, PB8, PB9, PE0, PE1
Injected current on any other FT and FTf pins -5 NA
Injected current on any other pins –5 +5
1. NA = not applicable.

Note: It is recommended to add a Schottky diode (pin to ground) to analog pins which may
potentially inject negative currents.

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6.3.17 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 56 are derived from tests
performed under the conditions summarized in Table 16. All I/Os are CMOS and TTL
compliant.

Table 56. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

0.35VDD–0.04 (1)
FT, FTf, TTa and NRST I/O
1.7 VVDD3.6 V - -
input low level voltage 0.3VDD(2)
1.75 V  VDD 
3.6 V,
VIL - - V
– 40 °CTA 
BOOT0 I/O input low level 105 °C 0.1VDD+0.1(1)
voltage
1.7 V VDD 
3.6 V, 0 °C TA  - -
105 °C

FT, FTf, TTa and NRST I/O 0.45VDD+0.3(1)

1.7 VVDD3.6 V - -
input high level voltage(4) 0.7VDD(2)
1.75 VVDD 
VIH 3.6 V,  V
BOOT0 I/O input high level – 40 °CTA 
105 °C 0.17VDD +0.7(1) - -
voltage
1.7 VVDD 3.6 V,
0 °CTA 105 °C
FT, FTf, TTa and NRST I/O
1.7 VVDD3.6 V - 10%VDD -
input hysteresis
1.75 VVDD 
VHYS 3.6 V, –40 °CTA  - - V
BOOT0 I/O input hysteresis 105 °C 100m
1.7 VVDD 3.6 V,
- -
0 °CTA 105 °C
I/O input leakage current (3) VSS VIN VDD - - 1
Ilkg I/O FT input leakage current µA
(4) VIN 5 V - - 3

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Table 56. I/O static characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

All pins
except for
PA10/PB12 30 40 50
Weak pull-up (OTG_FS_ID,
RPU equivalent OTG_HS_ID) VIN VSS
resistor(5)
PA10/PB12
(OTG_FS_ID, 7 10 14
OTG_HS_ID)
k
All pins
except for
Weak pull- PA10/PB12 30 40 50
down (OTG_FS_ID,
RPD OTG_HS_ID) VIN VDD
equivalent
resistor(6) PA10/PB12
(OTG_FS_ID, 7 10 14
OTG_HS_ID)
CIO(7) I/O pin capacitance - - 5 - pF
1. Guaranteed by design.
2. Tested in production.
3. Leakage could be higher than the maximum value, if negative current is injected on adjacent pins, Refer to Table 55: I/O
current injection susceptibility
4. To sustain a voltage higher than VDD +0.3 V, the internal pull-up/pull-down resistors must be disabled. Leakage could be
higher than the maximum value, if negative current is injected on adjacent pins.Refer to Table 55: I/O current injection
susceptibility
5. Pull-up resistors are designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the
series resistance is minimum (~10% order).
6. Pull-down resistors are designed with a true resistance in series with a switchable NMOS. This NMOS contribution to the
series resistance is minimum (~10% order).
7. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed based on test during characterization.

All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements for FT I/Os is shown in Figure 31.

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Figure 31. FT I/O input characteristics

VIL/VIH (V)

2.52 DD
7V
0.
=
in
Hm
t VI
en
m
ire
qu TTL requirement
re
VIHmin = 2V
2.00 OS
M
1.92 -C .3
on +0
ti V DD
uc 5
od 0.4
pr n=
in mi
d V IH
ste n s,
Te tio
ula
im
ns
1.22 do Area not
se 0.04
1.19 Ba determined V DD-
x= 0.35
1.065 I Lma
ns, V
sim ulatio
0.80 e d on
Bas TTL requirement
-
0.55 ction VILmax = 0.8V
rodu ent
0.51 d in p em
Teste S requir V DD
CMO ax = 0.3
VILm

VDD (V)
1.7 2.0 2.4 2.7 3.3 3.6
MS33746V3

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to 8 mA, and sink or
source up to 20 mA (with a relaxed VOL/VOH) except PC13, PC14 and PC15 which can
sink or source up to 3mA. When using the PC13 to PC15 GPIOs in output mode, the
speed should not exceed 2 MHz with a maximum load of 30 pF.
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2. In particular:
 The sum of the currents sourced by all the I/Os on VDD, plus the maximum Run
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
IVDD (see Table 14).
 The sum of the currents sunk by all the I/Os on VSS plus the maximum Run
consumption of the MCU sunk on VSS cannot exceed the absolute maximum rating
IVSS (see Table 14).

Output voltage levels

Unless otherwise specified, the parameters given in Table 57 are derived from tests
performed under ambient temperature and VDD supply voltage conditions summarized in
Table 16. All I/Os are CMOS and TTL compliant.

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Table 57. Output voltage characteristics

Symbol Parameter Conditions Min Max Unit

VOL(1) Output low level voltage for an I/O pin CMOS port(2) - 0.4
IIO = +8 mA V
VOH(3) Output high level voltage for an I/O pin
2.7 V VDD  3.6 V
VDD–0.4 -

VOL (1) Output low level voltage for an I/O pin TTL port(2) - 0.4
IIO =+ 8mA V
VOH (3) Output high level voltage for an I/O pin
2.7 V  VDD  3.6 V
2.4 -

VOL(1) Output low level voltage for an I/O pin IIO = +20 mA - 1.3(4)
V
VOH(3) Output high level voltage for an I/O pin 2.7 V  VDD  3.6 V VDD–1.3(4) -
VOL(1) Output low level voltage for an I/O pin IIO = +6 mA - 0.4(4)
V
VOH(3) Output high level voltage for an I/O pin 1.8 V  VDD  3.6 V VDD–0.4(4) -
VOL(1) Output low level voltage for an I/O pin IIO = +4 mA - 0.4(5)
V
VOH(3) Output high level voltage for an I/O pin 1.7 V  VDD  3.6V VDD–0.4(5) -
1. The IIO current sunk by the device must always respect the absolute maximum rating specified in Table 14.
and the sum of IIO (I/O ports and control pins) must not exceed IVSS.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. The IIO current sourced by the device must always respect the absolute maximum rating specified in
Table 14 and the sum of IIO (I/O ports and control pins) must not exceed IVDD.
4. Based on characterization data.
5. Guaranteed by design.

Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 32 and
Table 58, respectively.
Unless otherwise specified, the parameters given in Table 58 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 16.

Table 58. I/O AC characteristics(1)(2)

OSPEEDR
y[1:0] bit Symbol Parameter Conditions Min Typ Max Unit
value(1)

CL = 50 pF, VDD ≥ 2.7 V - - 4

CL = 50 pF, VDD ≥ 1.7 V - - 2
fmax(IO)out Maximum frequency(3) CL = 10 pF, VDD ≥ 2.7 V - - 8 MHz

00 CL = 10 pF, VDD ≥ 1.8 V - - 4

CL = 10 pF, VDD ≥ 1.7 V - - 3
Output high to low level fall
tf(IO)out/ CL = 50 pF, VDD = 1.7 V
time and output low to high - - 100 ns
tr(IO)out to 3.6 V
level rise time

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Table 58. I/O AC characteristics(1)(2) (continued)

OSPEEDR
y[1:0] bit Symbol Parameter Conditions Min Typ Max Unit
value(1)

CL = 50 pF, VDD≥ 2.7 V - - 25

CL = 50 pF, VDD≥ 1.8 V - - 12.5
CL = 50 pF, VDD≥ 1.7 V - - 10
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD ≥ 2.7 V - - 50
CL = 10 pF, VDD≥ 1.8 V - - 20
01
CL = 10 pF, VDD≥ 1.7 V - - 12.5
CL = 50 pF, VDD ≥ 2.7 V - - 10
Output high to low level fall CL = 10 pF, VDD ≥ 2.7 V - - 6
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 50 pF, VDD ≥ 1.7 V - - 20
level rise time
CL = 10 pF, VDD ≥ 1.7 V - - 10
CL = 40 pF, VDD ≥ 2.7 V - - 50(4)
CL = 10 pF, VDD ≥ 2.7 V - - 100(4)
fmax(IO)out Maximum frequency(3) CL = 40 pF, VDD ≥ 1.7 V - - 25 MHz
CL = 10 pF, VDD ≥ 1.8 V - - 50
10 CL = 10 pF, VDD ≥ 1.7 V - - 42.5
CL = 40 pF, VDD ≥2.7 V - - 6
Output high to low level fall CL = 10 pF, VDD ≥ 2.7 V - - 4
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 40 pF, VDD ≥ 1.7 V - - 10
level rise time
CL = 10 pF, VDD ≥ 1.7 V - - 6
CL = 30 pF, VDD ≥ 2.7 V - - 100(4)
CL = 30 pF, VDD ≥ 1.8 V - - 50
CL = 30 pF, VDD ≥ 1.7 V - - 42.5
fmax(IO)out Maximum frequency(3) MHz
CL = 10 pF, VDD≥ 2.7 V - - 180(4)
CL = 10 pF, VDD ≥ 1.8 V - - 100
CL = 10 pF, VDD ≥ 1.7 V - - 72.5
11
CL = 30 pF, VDD ≥ 2.7 V - - 4
CL = 30 pF, VDD ≥1.8 V - - 6
Output high to low level fall CL = 30 pF, VDD ≥1.7 V - - 7
tf(IO)out/
time and output low to high ns
tr(IO)out CL = 10 pF, VDD ≥ 2.7 V - - 2.5
level rise time
CL = 10 pF, VDD ≥1.8 V - - 3.5
CL = 10 pF, VDD ≥1.7 V - - 4
Pulse width of external
- tEXTIpw signals detected by the EXTI - 10 - - ns
controller

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1. Guaranteed by design.
2. The I/O speed is configured using the OSPEEDRy[1:0] bits. Refer to the STM32F4xx reference manual for a description of
the GPIOx_SPEEDR GPIO port output speed register.
3. The maximum frequency is defined in Figure 32.
4. For maximum frequencies above 50 MHz and VDD > 2.4 V, the compensation cell should be used.

Figure 32. I/O AC characteristics definition

90% 10%

50% 50%

10% 90%

EXTERNAL tr(IO)out tf(IO)out

OUTPUT
ON CL T

Maximum frequency is achieved if (tr + tf) ≤ (2/3)T and if the duty cycle is (45-55%)
when loaded by CL specified in the table “ I/O AC characteristics”.

ai14131d

6.3.18 NRST pin characteristics

The NRST pin input driver uses CMOS technology. It is connected to a permanent pull-up
resistor, RPU (see Table 56).
Unless otherwise specified, the parameters given in Table 59 are derived from tests
performed under the ambient temperature and VDD supply voltage conditions summarized
in Table 16.

Table 59. NRST pin characteristics

Symbol Parameter Conditions Min Typ Max Unit

RPU Weak pull-up equivalent resistor(1) VIN VSS 30 40 50 k

VF(NRST)(2) NRST Input filtered pulse - - - 100 ns
VNF(NRST)(2) NRST Input not filtered pulse VDD > 2.7 V 300 - - ns
TNRST_OUT Generated reset pulse duration Internal Reset source 20 - - µs
1. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance must be minimum (~10% order).
2. Guaranteed by design.

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Figure 33. Recommended NRST pin protection

VDD
External
reset circuit (1)
RPU
NRST (2) Internal Reset
Filter

0.1 μF

STM32F

ai14132c

1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 59. Otherwise the reset is not taken into account by the device.
3. The external capacitor on NRST must be placed as close as possible to the device.

6.3.19 TIM timer characteristics

The parameters given in Table 60 are guaranteed by design.
Refer to Section 6.3.17 for details on the input/output alternate function characteristics
(output compare, input capture, external clock, PWM output).

Table 60. TIMx characteristics(1)(2)

Symbol Parameter Conditions(3) Min Max Unit

AHB/APBx prescaler=1 or
1 - tTIMxCLK
2 or 4, fTIMxCLK = 180 MHz
tres(TIM) Timer resolution time
AHB/APBx prescaler>4,
1 - tTIMxCLK
fTIMxCLK = 90 MHz
Timer external clock
fEXT 0 fTIMxCLK/2 MHz
frequency on CH1 to CH4 fTIMxCLK = 180 MHz
ResTIM Timer resolution - 16/32 bit
Maximum possible count with
tMAX_COUNT - - 65536 × 65536 tTIMxCLK
32-bit counter
1. TIMx is used as a general term to refer to the TIM1 to TIM12 timers.
2. Guaranteed by design.
3. The maximum timer frequency on APB1 or APB2 is up to 180 MHz, by setting the TIMPRE bit in the RCC_DCKCFGR
register, if APBx prescaler is 1 or 2 or 4, then TIMxCLK = HCKL, otherwise TIMxCLK = 4x PCLKx.

6.3.20 Communications interfaces

I2C interface characteristics
The I2C interface meets the requirements of the standard I2C communication protocol with
the following restrictions: the I/O pins SDA and SCL too are mapped as not “true”
open-drain. When configured as open-drain, the PMOS connected between the I/O pin and
VDD is disabled, but is still present.

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The I2C characteristics are described in Table 61. Refer also to Section 6.3.17 for more
details on the input/output alternate function characteristics (SDA and SCL).

Table 61. I2C characteristics

Standard mode
Fast mode I2C(1)(2)
I2C(1)(2)
Symbol Parameter Unit
Min Max Min Max

tw(SCLL) SCL clock low time 4.7 - 1.3 -

µs
tw(SCLH) SCL clock high time 4.0 - 0.6 -
tsu(SDA) SDA setup time 250 - 100 -
(3)
th(SDA) SDA data hold time - 3450 - 900(4)
tv(SDA, ACK) Data, ACK valid time - 3.45 - 0.9
ns
tr(SDA)
SDA and SCL rise time - 1000 - 300
tr(SCL)
tf(SDA)
SDA and SCL fall time - 300 - 300
tf(SCL)
th(STA) Start condition hold time 4.0 - 0.6 -
Repeated Start condition µs
tsu(STA) 4.7 - 0.6 -
setup time
tsu(STO) Stop condition setup time 4.0 - 0.6 - µs
Stop to Start condition time
tw(STO:STA) 4.7 - 1.3 - µs
(bus free)
Pulse width of the spikes
that are suppressed by the
tSP - - 0.05 0.09(5) µs
analog filter for standard and
fast mode
Capacitive load for each bus
Cb - 400 - 400 pF
line
1. Guaranteed based on test during characterization.
2. fPCLK1 must be at least 2 MHz to achieve standard mode I2C frequencies. It must be at least 4 MHz to
achieve fast mode I2C frequencies, and a multiple of 10 MHz to reach the 400 kHz maximum I2C fast mode
clock.
3. The device must internally provide a hold time of at least 300 ns for the SDA signal in order to bridge the
undefined region of the falling edge of SCL.
4. The maximum data hold time has only to be met if the interface does not stretch the low period of SCL
signal.
5. The minimum width of the spikes filtered by the analog filter is above tSP(max).

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Figure 34. I2C bus AC waveforms and measurement circuit

VDD_I2C VDD_I2C

RP RP STM32
RS
SDA
I²C bus RS
SCL

START REPEATED

START

tsu(STA) START

SDA
tf(SDA) tr(SDA) tsu(SDA)
S TOP tw(STO:STA)
th(STA) tw(SCLL) th(SDA)

SCL
tw(SCLH) tr(SCL) tf(SCL) tsu(STO)

ai14979d

1. RS = series protection resistor.

2. RP = external pull-up resistor.
3. VDD_I2C is the I2C bus power supply.

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FMPI2C characteristics
The FMPI2C characteristics are described in Table 62.
Refer also to Section 6.3.17 for more details on the input/output alternate function
characteristics (SDA and SCL).

Table 62. FMPI2C characteristics(1)

Standard mode Fast mode Fast+ mode
- Parameter Unit
Min Max Min Max Min Max

17
fFMPI2CC FMPI2CCLK frequency 2 - 8 - -
16(2)
tw(SCLL) SCL clock low time 4.7 - 1.3 - 0.5 -
tw(SCLH) SCL clock high time 4.0 - 0.6 - 0.26 -
tsu(SDA) SDA setup time 0.25 - 0.10 - 0.05 -
tH(SDA) SDA data hold time 0 - 0 - 0 -
tv(SDA,ACK) Data, ACK valid time - 3.45 - 0.9 - 0.45
tr(SDA)
SDA and SCL rise time - 0.100 - 0.30 - 0.12
tr(SCL)
tf(SDA)
SDA and SCL fall time - 0.30 - 0.30 - 0.12 us
tf(SCL)
th(STA) Start condition hold time 4 - 0.6 - 0.26 -
Repeated Start condition
tsu(STA) 4.7 - 0.6 - 0.26 -
setup time
tsu(STO) Stop condition setup time 4 - 0.6 - 0.26 -
Stop to Start condition time
tw(STO:STA) 4.7 - 1.3 - 0.5 -
(bus free)
Pulse width of the spikes
suppressed by the analog
tSP - - 0.05 0.09 0.05 0.09
filter for standard and fast
mode
Capacitive load for each
Cb - 400 - 400 - 550(3) pF
bus line
1. Guaranteed based on test during characterization.
2. When tr(SDA,SCL)<=110ns.
3. Can be limited. Maximum supported value can be retrieved by referring to the following formulas:
tr(SDA/SCL) = 0.8473 x Rp x Cload
Rp(min) = (VDD -VOL(max)) / IOL(max)

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Figure 35. FMPI2C timing diagram and measurement circuit

V DD_I2C V DD_I2C

RP RP STM32Fxx
RS
SDA
I²C bus RS
SCL

START REPEATED
START

START
tsu(STA)

SDA
tf(SDA) tr(SDA) tsu(SDA)
STOP tw(STO:STA)
th(STA) tw(SCLH) th(SDA)

SCL
tw(SCLL) tr(SCL) tf(SCL) tsu(STO)

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SPI interface characteristics

Unless otherwise specified, the parameters given in Table 63 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 16, with the following configuration:
 Output speed is set to OSPEEDRy[1:0] = 10
 Capacitive load C = 30 pF
 Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 6.3.17 for more details on the input/output alternate function characteristics
(NSS, SCK, MOSI, MISO for SPI).
Table 63. SPI dynamic characteristics(1)
Symbol Parameter Conditions Min Typ Max Unit

Master full duplex/receiver mode,

2.7 V≤VDD≤3.6 V 45
SPI1/4
Master transmitter
1.71V <VDD< 3.6V 45
SPI1/4
Master
1.71V <VDD< 3.6V 22.5
SPI1/2/3/4
fSCK
SPI clock frequency Slave transmitter/ - - MHz
1/tc(SCK)
full duplex mode
45
SPI1/4
2.7V <VDD< 3.6V
Slave receiver mode
SPI1/4 45
1.71V <VDD< 3.6V
Slave mode
PI1/2/3/4 22.5(2)
1.71V <VDD< 3.6V
Duty cycle of SPI clock
Duty(SCK) Slave mode 30 50 70 %
frequency

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Table 63. SPI dynamic characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

tw(SCKH)
SCK high and low time Master mode, SPI presc = 2 TPCLK - 1.5 TPCLK TPCLK + 1.5
tw(SCKL)
tsu(NSS) NSS setup time Slave mode, SPI presc = 2 4 TPCLK
- -
th(NSS) NSS hold time Slave mode, SPI presc = 2 2 TPCLK
tsu(MI) Master mode 4 - -
Data input setup time
tsu(SI) Slave mode 3 - -
th(MI) Master mode 4 - -
Data input hold time
th(SI) Slave mode 2 - -
ta(SO) Data output access time Slave mode 7 - 21 ns
tdis(SO) Data output disable time Slave mode 5 - 12
Slave mode (after enable edge),
- 7.5 22
Data output valid/hold 2.7V ≤ VDD ≤ 3.6V
tv(SO)
time Slave mode (after enable edge),
- 7.5 10.5
1.7 V ≤ VDD ≤ 3.6 V
Data output valid/hold
th(SO) Slave mode (after enable edge) 5 - -
time
tv(MO) Data output valid time Master mode (after enable edge) - 1.5 5
th(MO) Data output hold time Master mode (after enable edge) 0 - -
1. Guaranteed based on test during characterization.
2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into SCK low or
high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master
having tsu(MI) = 0 while Duty(SCK) = 50%.

Figure 36. SPI timing diagram - slave mode and CPHA = 0

NSS input
SCK input

MISO MSB OUT BIT6 OUT LSB OUT

OUTPUT
(SI)

MOSI
MSB IN BIT1 IN LSB IN
INPUT
(SI)

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Figure 37. SPI timing diagram - slave mode and CPHA = 1

NSS input

tSU(NSS) tc(SCK) th(NSS)

SCK input

CPHA=1
CPOL=0 tw(SCKH)
CPHA=1 tw(SCKL)
CPOL=1

tr(SCK)
tv(SO) th(SO) tdis(SO)
ta(SO) tf(SCK)
MISO
MSB OUT BIT6 OUT LSB OUT
OUTPUT
tsu(SI) th(SI)
MOSI
INPUT MSB IN BIT 1 IN LSB IN

ai14135b

Figure 38. SPI timing diagram - master mode

High

NSS input

tc(SCK)
SCK Output

CPHA= 0
CPOL=0
CPHA= 0
CPOL=1
SCK Output

CPHA=1
CPOL=0
CPHA=1
CPOL=1

tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INP UT MSB IN BIT6 IN LSB IN

th(MI)
MOSI
MSB OUT B I T1 OUT LSB OUT
OUTPUT
tv(MO) th(MO)
ai14136c

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QSPI interface characteristics

Unless otherwise specified, the parameters given in Table 64 for QSPI are derived from
tests performed under the ambient temperature, fAHB frequency and VDD supply voltage
conditions summarized in Table 16, with the following configuration:
 Output speed is set to OSPEEDRy[1:0] = 11
 Capacitive load C = 20 pF
 Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 6.3.17 for more details on the input/output alternate function
characteristics.

Table 64. QSPI dynamic characteristics in SDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

Write mode
1.71 V ≤ VDD ≤ 3.6 V - - 90
Cload = 15 pF
fSCK
QSPI clock frequency Read mode MHz
1/tc(SCK) 2.7 V < VDD < 3.6 V - - 90
Cload = 15 pF
1.71 V ≤ VDD ≤ 3.6 V - - 48
tw(CKH) (T(CK) / 2) - 2 - T(CK) / 2
QSPI clock high and low -
tw(CKL) T(CK) / 2 - (T(CK) / 2) +2
ts(IN) Data input setup time - 2 - -
ns
th(IN) Data input hold time - 4.5 - -
tv(OUT) Data output valid time - - 1.5 3
th(OUT) Data output hold time - 0 - -
1. Guaranteed based on test during characterization.

Table 65. QSPI dynamic characteristics in DDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

Write mode
1.71 V ≤ VDD ≤ 3.6 V - - 60
Cload = 15 pF
fSCK
QSPI clock frequency Read mode MHz
1/tc(SCK) 2.7 V < VDD < 3.6 V 60
- -
Cload = 15 pF
1.71 V ≤ VDD ≤ 3.6 V - - 48

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Table 65. QSPI dynamic characteristics in DDR mode(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

tw(CKH) (T(CK) / 2) - 2 - T(CK) / 2

QSPI clock high and low -
tw(CKL) T(CK) / 2 - (T(CK) / 2) +2
ts(IN) Data input setup time - 0 - -
th(IN) Data input hold time - 5.5 - - ns
2.7 V < VDD < 3.6 V - 5.5 6.5
tv(OUT) Data output valid time
1.71 V < VDD < 3.6 V - 8 9.5
th(OUT) Data output hold time - 3.5 - -
1. Guaranteed based on test during characterization.

I2S interface characteristics

Unless otherwise specified, the parameters given in Table 66 for the I2S interface are
derived from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized in Table 16, with the following configuration:
 Output speed is set to OSPEEDRy[1:0] = 10
 Capacitive load C = 30 pF
 Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 6.3.17 for more details on the input/output alternate function characteristics
(CK, SD, WS).

Table 66. I2S dynamic characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCK I2S Main clock output - 256 x 8K 256 x Fs(2) MHz

Master data - 64 x Fs
fCK I2S clock frequency MHz
Slave data - 64 x Fs
DCK I2S clock frequency duty cycle Slave receiver 30 70 %

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Table 66. I2S dynamic characteristics(1) (continued)

Symbol Parameter Conditions Min Max Unit

tv(WS) WS valid time Master mode - 5.5

th(WS) WS hold time Master mode 1 -
tsu(WS) Slave mode 1 -
WS setup time
(3)
- PCM short pulse Slave mode 2 -
th(WS) Slave mode 3 -
WS hold time
- PCM short pulse Slave mode(3) 1.5 -
tsu(SD_MR) Master receiver 3 -
Data input setup time ns
tsu(SD_SR) Slave receiver 2.5 -
th(SD_MR) Master receiver 4 -
Data input hold time
th(SD_SR) Slave receiver 1 -
tv(SD_ST) Slave transmitter (after enable edge) - 16
Data output valid time
tv(SD_MT) Master transmitter (after enable edge) - 4.5
th(SD_ST) Slave transmitter (after enable edge) 5 -
Data output hold time
th(SD_MT) Master transmitter (after enable edge) 1 -
1. Guaranteed based on test during characterization.
2. The maximum value of 256xFs is 45 MHz (APB1 maximum frequency).
3. Measurement done with respect to I2S_CK rising edge.

Note: Refer to the I2S section of RM0390 reference manual for more details on the sampling
frequency (FS).
fMCK, fCK, and DCK values reflect only the digital peripheral behavior. The values of these
parameters might be slightly impacted by the source clock precision. DCK depends mainly
on the value of ODD bit. The digital contribution leads to a minimum value of 
(I2SDIV / (2*I2SDIV + ODD) and a maximum value of (I2SDIV + ODD) / (2*I2SDIV + ODD).
FS maximum value is supported for each mode/condition.

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Figure 39. I2S slave timing diagram (Philips protocol)(1)

tc(CK)

CK Input CPOL = 0

CPOL = 1

tw(CKH) tw(CKL) th(WS)

WS input

tsu(WS) tv(SD_ST) th(SD_ST)

SDtransmit
LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_SR) th(SD_SR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

ai14881b

1. .LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

Figure 40. I2S master timing diagram (Philips protocol)(1)

tf(CK) tr(CK)

tc(CK)
CK output

CPOL = 0
tw(CKH)

CPOL = 1
tv(WS) tw(CKL) th(WS)

WS output

tv(SD_MT) th(SD_MT)

SDtransmit LSB transmit(2) MSB transmit Bitn transmit LSB transmit

tsu(SD_MR) th(SD_MR)

SDreceive LSB receive(2) MSB receive Bitn receive LSB receive

ai14884b

1. LSB transmit/receive of the previously transmitted byte. No LSB transmit/receive is sent before the first
byte.

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SAI characteristics
Unless otherwise specified, the parameters given in Table 67 for SAI are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 16, with the following configuration:
 Output speed is set to OSPEEDRy[1:0] = 10
 Capacitive load C = 30 pF
 Measurement points are performed at CMOS levels: 0.5 VDD
Refer to Section 6.3.17 for more details on the input/output alternate function
characteristics (SCK,SD,WS).

Table 67. SAI characteristics(1)

(3)

Symbol Parameter Conditions Min Max Unit

fMCK SAI Main clock output - 256 x 8K 256 x Fs MHz

Master data: 32 bits - 128 x Fs(3)
fCK SAI clock frequency(2) MHz
Slave data: 32 bits - 128 x Fs(3)
Master mode
- 14 %
2.7 V ≤ VDD ≤3.6 V
tv(FS) FS valid time
Master mode
- 17.5
1.71 V ≤ VDD ≤3.6 V
th(FS) FS hold time Master mode 7 -
tsu(FS) FS setup time Slave mode 1 -
th(FS) FS hold time Slave mode 1 -
tsu(SD_A_MR) Master receiver 1 -
Data input setup time
tsu(SD_B_SR) Slave receiver 1 -
th(SD_A_MR) Master receiver 5 -
Data input hold time
th(SD_B_SR) Slave receiver 1 -
ns
Slave transmitter (after enable edge
- 9.5
2.7 V ≤ VDD ≤3.6 V
tv(SD_B_ST) Data output valid time
Slave transmitter (after enable edge
- 16
1.71 V ≤ VDD ≤3.6 V
th(SD_B_ST) Data output hold time Slave transmitter (after enable edge 6 -
Master transmitter (after enable edge
- 15
2.7 V ≤ VDD ≤3.6 V
tv(SD_B_ST) Data output valid time
Master transmitter (after enable edge
- 18
1.71 V ≤ VDD ≤3.6 V
th(SD_B_ST) Data output hold time Master transmitter (after enable edge 7 -
1. Guaranteed based on test during characterization.
2. 256xFs maximum corresponds to 45 MHz (APB2 xaximum frequency)
3. With Fs = 192 KHz

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Figure 41. SAI master timing waveforms

1/fSCK

SAI_SCK_X
th(FS)

SAI_FS_X
(output) tv(FS) tv(SD_MT) th(SD_MT)

SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_MR) th(SD_MR)

SAI_SD_X Slot n
(receive)
MS32771V1

Figure 42. SAI slave timing waveforms

1/fSCK

SAI_SCK_X
tw(CKH_X) tw(CKL_X) th(FS)

SAI_FS_X
(input) tsu(FS) tv(SD_ST) th(SD_ST)

SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_SR) th(SD_SR)

SAI_SD_X Slot n
(receive)
MS32772V1

USB OTG full speed (FS) characteristics

This interface is present in both the USB OTG HS and USB OTG FS controllers.

Table 68. USB OTG full speed startup time

Symbol Parameter Max Unit

tSTARTUP(1) USB OTG full speed transceiver startup time 1 µs

1. Guaranteed by design.

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Table 69. USB OTG full speed DC electrical characteristics

Symbol Parameter Conditions Min.(1) Typ. Max.(1) Unit

USB OTG full speed

VDDUSB transceiver operating - 3.0(2) - 3.6 V
voltage
Differential input I(USB_FS_DP/DM,
Input VDI(3) 0.2 - -
sensitivity USB_HS_DP/DM)
levels
Differential common mode
VCM(3) Includes VDI range 0.8 - 2.5 V
range
Single ended receiver
VSE(3) - 1.3 - 2.0
threshold

Output VOL Static output level low RL of 1.5 kΩ to 3.6 V(4) - - 0.3
V
levels VOH Static output level high RL of 15 kΩ to VSS(4) 2.8 - 3.6
PA11, PA12, PB14, PB15
(USB_FS_DP/DM, 17 21 24
USB_HS_DP/DM)
RPD VIN = VDDUSB
PA9, PB13
(OTG_FS_VBUS, 0.65 1.1 2.0
OTG_HS_VBUS)
k
PA12, PB15
(USB_FS_DP, VIN = VSS 1.5 1.8 2.1
USB_HS_DP)
RPU
PA9, PB13
(OTG_FS_VBUS, VIN = VSS 0.25 0.37 0.55
OTG_HS_VBUS)
1. All the voltages are measured from the local ground potential.
2. The USB OTG full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed
electrical characteristics which are degraded in the 2.7 to 3.0 V VDD voltage range.
3. Guaranteed by design.
4. RL is the load connected on the USB OTG full speed drivers.

Note: When VBUS sensing feature is enabled, PA9 and PB13 must be left at their default state
(floating input), not as alternate function. A typical 200 µA current consumption of the
sensing block (current to voltage conversion to determine the different sessions) can be
observed on PA9 and PB13 when the feature is enabled.

Figure 43. USB OTG full speed timings: definition of data signal rise and fall time
Cross over
points
Differential
data lines

VCRS

VSS

tf tr
ai14137b

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Table 70. USB OTG full speed electrical characteristics(1)

Driver characteristics

Symbol Parameter Conditions Min Max Unit

tr Rise time(2) CL = 50 pF 4 20 ns
(2)
tf Fall time CL = 50 pF 4 20 ns
trfm Rise/ fall time matching tr/tf 90 110 %
VCRS Output signal crossover voltage - 1.3 2.0 V
Driving high or
ZDRV Output driver impedance(3) 28 44 
low
1. Guaranteed by design.
2. Measured from 10% to 90% of the data signal. For more detailed informations, refer to USB Specification -
Chapter 7 (version 2.0).
3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching
impedance is included in the embedded driver.

USB high speed (HS) characteristics

Unless otherwise specified, the parameters given in Table 73 for ULPI are derived from
tests performed under the ambient temperature, fHCLK frequency summarized in Table 72
and VDD supply voltage conditions summarized in Table 71, with the following configuration:
 Output speed is set to OSPEEDRy[1:0] = 10, unless otherwise specified
 Capacitive load C = 30 pF, unless otherwise specified
 Measurement points are done at CMOS levels: 0.5 VDD.
Refer to Section 6.3.17 for more details on the input/output characteristics.

Table 71. USB HS DC electrical characteristics

Symbol Parameter Min.(1) Max.(1) Unit

Input level VDD USB OTG HS operating voltage 1.7 3.6 V

1. All the voltages are measured from the local ground potential.

Table 72. USB HS clock timing parameters(1)

Symbol Parameter Min Typ Max Unit

fHCLK value to guarantee proper operation of

- 30 - - MHz
USB HS interface
FSTART_8BIT Frequency (first transition) 8-bit ±10% 54 60 66 MHz
FSTEADY Frequency (steady state) ±500 ppm 59.97 60 60.03 MHz
DSTART_8BIT Duty cycle (first transition) 8-bit ±10% 40 50 60 %
DSTEADY Duty cycle (steady state) ±500 ppm 49.975 50 50.025 %
Time to reach the steady state frequency and
tSTEADY - - 1.4 ms
duty cycle after the first transition

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Table 72. USB HS clock timing parameters(1) (continued)

Symbol Parameter Min Typ Max Unit

tSTART_DEV Clock startup time after the Peripheral - - 5.6

ms
tSTART_HOST de-assertion of SuspendM Host - - -
PHY preparation time after the first transition
tPREP - - - µs
of the input clock
1. Guaranteed by design.

Figure 44. ULPI timing diagram

Clock

tSC tHC
Control In
(ULPI_DIR,
ULPI_NXT) tSD tHD
data In
(8-bit)

tDC tDC
Control out
(ULPI_STP)
tDD
data out
(8-bit)
ai17361c

Table 73. Dynamic characteristics: USB ULPI(1)

Symbol Parameter Conditions Min. Typ. Max. Unit

tSC Control in (ULPI_DIR, ULPI_NXT) setup time - 1 - -

tHC Control in (ULPI_DIR, ULPI_NXT) hold time - 1.5 - -
tSD Data in setup time - 1.5 - -
tHD Data in hold time - 1.5 - - ns
2.7 V < VDD < 3.6 V, 
- 6 8.5
CL = 20 pF
tDC/tDD Data/control output delay
1.71 V < VDD < 3.6 V,
- 6 11.5
CL = 15 pF
1. Guaranteed based on test during characterization.

CAN (controller area network) interface

Refer to Section 6.3.17 for more details on the input/output alternate function characteristics
(CANx_TX and CANx_RX).

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6.3.21 12-bit ADC characteristics

Unless otherwise specified, the parameters given in Table 74 are derived from tests
performed under the ambient temperature, fPCLK2 frequency and VDDA supply voltage
conditions summarized in Table 16.

Table 74. ADC characteristics

Symbol Parameter Conditions Min Typ Max Unit

VDDA Power supply 1.7(1) - 3.6

VDDA  VREF+ < 1.2 V
VREF+ (1)
Positive reference voltage 1.7 - VDDA V
VREF- Negative reference voltage - - 0 -
VDDA = 1.7 (1)
to 2.4 V 0.6 15 18 MHz
fADC ADC clock frequency
VDDA = 2.4 to 3.6 V 0.6 30 36 MHz
fADC = 30 MHz, 
- - 1764 kHz
fTRIG(2) External trigger frequency 12-bit resolution
- - - 17 1/fADC
0 (VSSA or VREF-
VAIN Conversion voltage range(3) - - VREF+ V
tied to ground)
See Equation 1 for
RAIN(2) External input impedance - - 50 
details
RADC(2)(4) Sampling switch resistance - - - 6 
Internal sample and hold
CADC(2) - - 4 7 pF
capacitor

Injection trigger conversion fADC = 30 MHz - - 0.100 µs

tlat(2)
latency - - - 3(5) 1/fADC

Regular trigger conversion fADC = 30 MHz - - 0.067 µs

tlatr(2)
latency - - - 2(5) 1/fADC
fADC = 30 MHz 0.100 - 16 µs
tS(2) Sampling time
- 3 - 480 1/fADC
tSTAB(2) Power-up time - - 2 3 µs
fADC = 30 MHz
0.50 - 16.40 µs
12-bit resolution
fADC = 30 MHz
0.43 - 16.34 µs
10-bit resolution
Total conversion time (including fADC = 30 MHz
tCONV(2) 0.37 - 16.27 µs
sampling time) 8-bit resolution
fADC = 30 MHz
0.30 - 16.20 µs
6-bit resolution
9 to 492 (tS for sampling +n-bit resolution for successive
1/fADC
approximation)

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Table 74. ADC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

12-bit resolution
- - 2 Msps
Single ADC
12-bit resolution
Sampling rate
Interleave Dual ADC - - 3.75 Msps
fS(2) (fADC = 30 MHz, and 
mode
tS = 3 ADC cycles)
12-bit resolution
Interleave Triple ADC - - 6 Msps
mode
ADC VREF DC current
IVREF+(2) consumption in conversion - - 300 500 µA
mode
ADC VDDA DC current
IVDDA(2) consumption in conversion - - 1.6 1.8 mA
mode
1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.16.2:
Internal reset OFF).
2. Guaranteed based on test during characterization.
3. VREF+ is internally connected to VDDA and VREF- is internally connected to VSSA.
4. RADC maximum value is given for VDD=1.7 V, and minimum value for VDD=3.3 V.
5. For external triggers, a delay of 1/fPCLK2 must be added to the latency specified in Table 74.

Equation 1: RAIN max formula

 k – 0.5 
R AIN = -------------------------------------------------------------------------
- – R ADC
N+2
f ADC  C ADC  ln  2 

The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. N = 12 (from 12-bit resolution) and k is the number of
sampling periods defined in the ADC_SMPR1 register.

Table 75. ADC static accuracy at fADC = 18 MHz(1)

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±3 ±4

fADC =18 MHz
EO Offset error ±2 ±3
VDDA = 1.7 to 3.6 V
EG Gain error ±1 ±3 LSB
VREF = 1.7 to 3.6 V
ED Differential linearity error VDDA  VREF < 1.2 V ±1 ±2
EL Integral linearity error ±2 ±3
1. Better performance can be achieved with restricted VDD, frequency and temperature ranges.
2. Guaranteed based on test during characterization.

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Table 76. ADC static accuracy at fADC = 30 MHz(1)

a

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±2 ±5

fADC = 30 MHz, 
EO Offset error ±1.5 ±2.5
RAIN < 10 k, 
EG Gain error VDDA = 2.4 to 3.6 V,  ±1.5 ±3 LSB
VREF = 1.7 to 3.6 V, 
ED Differential linearity error ±1 ±2
VDDA  VREF < 1.2 V
EL Integral linearity error ±1.5 ±3
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
2. Guaranteed based on test during characterization.

Table 77. ADC static accuracy at fADC = 36 MHz(1)

Symbol Parameter Test conditions Typ Max(2) Unit

ET Total unadjusted error ±4 ±7

fADC =36 MHz,
EO Offset error ±2 ±3
VDDA = 2.4 to 3.6 V,
EG Gain error ±3 ±6 LSB
VREF = 1.7 to 3.6 V
ED Differential linearity error VDDA  VREF < 1.2 V ±2 ±3
EL Integral linearity error ±3 ±6
1. Better performance could be achieved in restricted VDD, frequency and temperature ranges.
2. Guaranteed based on test during characterization.

Table 78. ADC dynamic accuracy at fADC = 18 MHz - Limited test conditions(1)
Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits 10.3 10.4 - bits

fADC =18 MHz
SINAD Signal-to-noise and distortion ratio VDDA = VREF+= 1.7 V 64 64.2 -
SNR Signal-to-noise ratio Input Frequency = 20 KHz 64 65 - dB
Temperature = 25 °C
THD Total harmonic distortion -67 -72 -
1. Guaranteed based on test during characterization.

Table 79. ADC dynamic accuracy at fADC = 36 MHz - Limited test conditions(1)
Symbol Parameter Test conditions Min Typ Max Unit

ENOB Effective number of bits 10.6 10.8 - bits

fADC =36 MHz
SINAD Signal-to noise and distortion ratio VDDA = VREF+ = 3.3 V 66 67 -
SNR Signal-to noise ratio Input Frequency = 20 KHz 64 68 - dB
Temperature = 25 °C
THD Total harmonic distortion - 70 - 72 -
1. Guaranteed based on test during characterization.

Note: ADC accuracy vs. negative injection current: injecting a negative current on any analog
input pins should be avoided as this significantly reduces the accuracy of the conversion

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171
Electrical characteristics STM32F446xC/E

being performed on another analog input. It is recommended to add a Schottky diode (pin to
ground) to analog pins which may potentially inject negative currents.
Any positive injection current within the limits specified for IINJ(PIN) and IINJ(PIN) in
Section 6.3.17 does not affect the ADC accuracy.

Figure 45. ADC accuracy characteristics

V REF+ V DDA
[1LSB IDEAL = (or depending on package)]
4096 4096
EG
4095
4094
4093

(2)
ET
7 (3)
(1)
6
5
EO EL
4
3
ED
2
1L SBIDEAL
1

0
1 2 3 456 7 4093 4094 4095 4096
V SSA VDDA
ai14395c

1. See also Table 76.

2. Example of an actual transfer curve.
3. Ideal transfer curve.
4. End point correlation line.
5. ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset error: deviation between the first actual transition and the first ideal one.
EG = Gain error: deviation between the last ideal transition and the last actual one.
ED = Differential linearity error: maximum deviation between actual steps and the ideal one.
EL = Integral linearity error: maximum deviation between any actual transition and the end point correlation
line.

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Figure 46. Typical connection diagram using the ADC

VDD STM32F
Sample and hold ADC
VT converter
0.6 V
RAIN(1) AINx RADC(1)
12-bit
converter
VT
VAIN
0.6 V C ADC(1)
Cparasitic
IL±1 μA

ai17534

1. Refer to Table 74 for the values of RAIN, RADC and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (~ 5 pF). A high Cparasitic value downgrades conversion accuracy. To remedy this, fADC
has to be reduced.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 47 or Figure 48,
depending on whether VREF+ is connected to VDDA or not. The 10 nF capacitors should be
ceramic (good quality). They should be placed as close as possible to the chip.

Figure 47. Power supply and reference decoupling (VREF+ not connected to VDDA)

STM32F

VREF+ (1)

1 μF // 10 nF
VDDA

1 μF // 10 nF

(1)
VSSA/VREF-

ai17535b

1. VREF+ and VREF– inputs are both available on UFBGA144. VREF+ is also available on LQFP100, LQFP144,
and WLCSP81. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.

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Electrical characteristics STM32F446xC/E

Figure 48. Power supply and reference decoupling (VREF+ connected to VDDA)

STM32F

VREF+/VDDA (1)

1 μF // 10 nF

(1)
VREF-/VSSA

ai17536c

1. VREF+ and VREF– inputs are both available on UFBGA144. VREF+ is also available on LQFP100, LQFP144,
and WLCSP81. When VREF+ and VREF– are not available, they are internally connected to VDDA and VSSA.

6.3.22 Temperature sensor characteristics

Table 80. Temperature sensor characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VSENSE linearity with temperature - 1 2 °C

Avg_Slope(1) Average slope - 2.5 - mV/°C
V25(1) Voltage at 25 °C - 0.76 - V
tSTART(2) Startup time - 6 10 µs
TS_temp(2) ADC sampling time when reading the temperature (1 °C accuracy) 10 - - µs
1. Guaranteed based on test during characterization.
2. Guaranteed by design.

Table 81. Temperature sensor calibration values

Symbol Parameter Memory address

TS_CAL1 TS ADC raw data acquired at temperature of 30 °C, VDDA= 3.3 V 0x1FFF 7A2C - 0x1FFF 7A2D
TS_CAL2 TS ADC raw data acquired at temperature of 110 °C, VDDA= 3.3 V 0x1FFF 7A2E - 0x1FFF 7A2F

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6.3.23 VBAT monitoring characteristics

Table 82. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 50 - K

Q Ratio on VBAT measurement - 4 - -
(1)
Er Error on Q -1 - +1 %
ADC sampling time when reading the VBAT 
TS_vbat(2)(2) 5 - - µs
1 mV accuracy
1. Guaranteed by design.
2. Shortest sampling time can be determined in the application by multiple iterations.

6.3.24 Reference voltage

The parameters given in Table 83 are derived from tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 16.

Table 83. internal reference voltage

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.18 1.21 1.24 V
ADC sampling time when reading the
TS_vrefint(1) - 10 - - µs
internal reference voltage
Internal reference voltage spread over the
VRERINT_s(2) VDD = 3 V 10 mV - 3 5 mV
temperature range
TCoeff(2) Temperature coefficient - - 30 50 ppm/°C
tSTART(2) Startup time - - 6 10 µs
1. Shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.

Table 84. Internal reference voltage calibration values

Symbol Parameter Memory address

VREFIN_CAL Raw data acquired at temperature of 30 °C VDDA = 3.3 V 0x1FFF 7A2A - 0x1FFF 7A2B

6.3.25 DAC electrical characteristics

Table 85. DAC characteristics

Symbol Parameter Conditions Min Typ Max Unit Comments

Analog supply 1.7

VDDA - (1) - 3.6 V -
voltage
Reference supply 1.7(
VREF+ - 1) - 3.6 V VREF+ VDDA
voltage

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Table 85. DAC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit Comments

VSSA Ground - 0 - 0 V -
Connected
DAC 5 - - -
to VSSA
RLOAD(2) Resistive load output kΩ
buffer ON Connected
25 - - -
to VDDA
When the buffer is OFF, the
Minimum resistive load
Impedance output
RO(2) - - - 15 kΩ between DAC_OUT and VSS
with buffer OFF
to have a 1% accuracy is
1.5 MΩ
Maximum capacitive load at
CLOAD(2) Capacitive load - - - 50 pF DAC_OUT pin (when the
buffer is ON).

Lower DAC_OUT It gives the maximum output

DAC_OUT
(2) voltage with buffer - 0.2 - - V excursion of the DAC.
min
ON It corresponds to 12-bit input
Higher DAC_OUT code (0x0E0) to (0xF1C) at
DAC_OUT VDDA VREF+ = 3.6 V and (0x1C7) to
(2) voltage with buffer - - - V
max – 0.2 (0xE38) at VREF+ = 1.7 V
ON
Lower DAC_OUT
DAC_OUT
voltage with buffer - - 0.5 - mV
min(2)
OFF It gives the maximum output
Higher DAC_OUT VREF excursion of the DAC.
DAC_OUT
(2) voltage with buffer - - - ±1 V
max
OFF LSB
With no load, worst code
(0x800) at VREF+ = 3.6 V in
DAC DC VREF - - 170 240
terms of DC consumption on
current the inputs
IVREF+(4) consumption in µA
quiescent mode With no load, worst code
(Standby mode) (0xF1C) at VREF+ = 3.6 V in
- - 50 75
terms of DC consumption on
the inputs
With no load, middle code
- - 280 380 µA
DAC DC VDDA (0x800) on the inputs
current With no load, worst code
IDDA(4)
consumption in (0xF1C) at VREF+ = 3.6 V in
quiescent mode(3) - - 475 625 µA
terms of DC consumption on
the inputs

Differential non Given for the DAC in 10-bit

linearity difference - - - ±0.5 LSB
configuration.
DNL(4) between two
consecutive code - Given for the DAC in 12-bit
1 LSB) - - - ±2 LSB
configuration.

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Table 85. DAC characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit Comments

Integral non Given for the DAC in 10-bit

- - - ±1 LSB
linearity (difference configuration.
between
measured value at
Code i and the
INL(4)
value at Code i on Given for the DAC in 12-bit
a line drawn - - - ±4 LSB
configuration.
between Code 0
and last Code
1023)
Offset error Given for the DAC in 12-bit
- - - ±10 mV
(difference configuration
between Given for the DAC in 10-bit at
Offset(4) measured value at - - - ±3 LSB
VREF+ = 3.6 V
Code (0x800) and
the ideal value = Given for the DAC in 12-bit at
- - - ±12 LSB
VREF+/2) VREF+ = 3.6 V
Gain Given for the DAC in 12-bit
Gain error - - - ±0.5 %
error(4) configuration
Total harmonic
CLOAD  50 pF,
tSETTLING(4) distortion - - 3 6 µs
RLOAD  5 kΩ
Buffer ON
CLOAD  50 pF,
THD(4) - - - - - dB
RLOAD  5 kΩ
Max frequency for
a correct
DAC_OUT change
Update MS/ CLOAD  50 pF,
when small - - - 1
rate(2) s RLOAD  5 kΩ
variation in the
input code (from
code i to i+1 LSB)
Wakeup time from
off state (Setting CLOAD  50 pF, RLOAD  5 kΩ
tWAKEUP(4) the ENx bit in the - - 6.5 10 µs input code between lowest
DAC Control and highest possible ones.
register)
Power supply
(2) rejection ratio (to
PSRR+ - - - 67 - 40 dB No RLOAD, CLOAD = 50 pF
VDDA) (static DC
measurement)
1. VDDA minimum value of 1.7 V is obtained with the use of an external power supply supervisor (refer to Section 3.16.2:
Internal reset OFF).
2. Guaranteed by design.
3. The quiescent mode corresponds to a state where the DAC maintains a stable output level to ensure that no dynamic
consumption occurs.
4. Guaranteed based on test during characterization.

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Electrical characteristics STM32F446xC/E

Figure 49. 12-bit buffered/non-buffered DAC

Buffered/non-buffered DAC

(1)
Buffer

RLOAD
12-bit
DACx_OUT
digital to
analog
converter
CLOAD

ai17157d

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external
loads directly without the use of an external operational amplifier. The buffer can be bypassed by
configuring the BOFFx bit in the DAC_CR register.

6.3.26 FMC characteristics

Unless otherwise specified, the parameters given in Table 86 to Table 93 for the FMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 15, with the following configuration:
 Output speed is set to OSPEEDRy[1:0] = 10
 Capacitance load C = 30 pF
 Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 6.3.17 for more details on the input/output characteristics.

Asynchronous waveforms and timings

Figure 50 through Figure 53 represent asynchronous waveforms and Table 86 through
Table 93 provide the corresponding timings. The results shown in these tables are obtained
with the following FMC configuration:
 AddressSetupTime = 0x1
 AddressHoldTime = 0x1
 DataSetupTime = 0x1 (except for asynchronous NWAIT mode , DataSetupTime = 0x5)
 BusTurnAroundDuration = 0x0
In all timing tables, the THCLK is the HCLK clock period.

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Figure 50. Asynchronous non-multiplexed SRAM/PSRAM/NOR read waveforms

tw(NE)

FMC_NE

tv(NOE_NE) t w(NOE) t h(NE_NOE)

FMC_NOE

FMC_NWE

tv(A_NE) t h(A_NOE)

FMC_A[25:0] Address
tv(BL_NE) t h(BL_NOE)

FMC_NBL[1:0]

t h(Data_NE)

t su(Data_NOE) th(Data_NOE)

t su(Data_NE)

FMC_D[15:0] Data

t v(NADV_NE)

tw(NADV)

FMC_NADV (1)

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

MS32753V1

1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.

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Electrical characteristics STM32F446xC/E

Table 86. Asynchronous non-multiplexed SRAM/PSRAM/NOR Read timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 2THCLK – 2 2 THCLK + 0.5

tv(NOE_NE) FMC_NEx low to FMC_NOE low 0 1
tw(NOE) FMC_NOE low time 2THCLK - 1 2THCLK + 0.5
th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 -
tv(A_NE) FMC_NEx low to FMC_A valid - 0.5
th(A_NOE) Address hold time after FMC_NOE high 0 -
tv(BL_NE) FMC_NEx low to FMC_BL valid - 2
ns
th(BL_NOE) FMC_BL hold time after FMC_NOE high 0 -
tsu(Data_NE) Data to FMC_NEx high setup time THCLK - 2 -
tsu(Data_NOE) Data to FMC_NOEx high setup time THCLK - 2 -
th(Data_NOE) Data hold time after FMC_NOE high 0 -
th(Data_NE) Data hold time after FMC_NEx high 0 -
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0
tw(NADV) FMC_NADV low time - THCLK +1
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

Table 87. Asynchronous non-multiplexed SRAM/PSRAM/NOR read

NWAIT timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 7THCLK + 1 7THCLK

tw(NOE) FMC_NWE low time 5THCLK – 1 5THCLK + 1

ns
tw(NWAIT) FMC_NWAIT low time THCLK – 0.5 -
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+ 1.5 -
th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK + 1 -
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

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Figure 51. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

tw(NE)

FMC_NEx

FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)

FMC_NWE

tv(A_NE) th(A_NWE)

FMC_A[25:0] Address
tv(BL_NE) th(BL_NWE)

FMC_NBL[1:0] NBL
tv(Data_NE) th(Data_NWE)

FMC_D[15:0] Data
t v(NADV_NE)

tw(NADV)
FMC_NADV (1)

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)
MS32754V1

1. Mode 2/B, C and D only. In Mode 1, FMC_NADV is not used.

Table 88. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

Symbol Parameter Min Max Unit
tw(NE) FMC_NE low time 3 THCLK - 2 3 THCLK +0.5
tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK – 0.5 THCLK + 0.5
tw(NWE) FMC_NWE low time THCLK THCLK+ 0.5
th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK + 0.5 -
tv(A_NE) FMC_NEx low to FMC_A valid - 0
th(A_NWE) Address hold time after FMC_NWE high THCLK - 0.5 -
ns
tv(BL_NE) FMC_NEx low to FMC_BL valid - 1
th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK + 0.5 -
tv(Data_NE) Data to FMC_NEx low to Data valid - THCLK + 2
th(Data_NWE) Data hold time after FMC_NWE high THCLK + 0.5 -
tv(NADV_NE) FMC_NEx low to FMC_NADV low - 0
tw(NADV) FMC_NADV low time - THCLK+ 0.5
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

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Table 89. Asynchronous non-multiplexed SRAM/PSRAM/NOR write

NWAIT timings(1)(2)
Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK - 0.5 8THCLK + 1

tw(NWE) FMC_NWE low time 6THCLK - 0.5 6THCLK + 1

ns
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK - 0.5 -
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 4THCLK + 2 -
invalid
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

Figure 52. Asynchronous multiplexed PSRAM/NOR read waveforms

tw(NE)

FMC_ NE
tv(NOE_NE) t h(NE_NOE)

FMC_NOE

t w(NOE)

FMC_NWE

tv(A_NE) th(A_NOE)

FMC_ A[25:16] Address

tv(BL_NE) th(BL_NOE)

FMC_ NBL[1:0] NBL

th(Data_NE)
tsu(Data_NE)
t v(A_NE) tsu(Data_NOE) th(Data_NOE)

FMC_ AD[15:0] Address Data

t v(NADV_NE) th(AD_NADV)
tw(NADV)

FMC_NADV

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)

MS32755V1

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Table 90. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3THCLK – 2 3THCLK+0.5

tv(NOE_NE) FMC_NEx low to FMC_NOE low 2THCLK – 0.5 2THCLK
ttw(NOE) FMC_NOE low time THCLK – 1 THCLK + 0.5
th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 -
tv(A_NE) FMC_NEx low to FMC_A valid - 2
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 2
tw(NADV) FMC_NADV low time THCLK – 0.5 THCLK + 0.5
FMC_AD(address) valid hold time after
th(AD_NADV) 0 - ns
FMC_NADV high)
th(A_NOE) Address hold time after FMC_NOE high THCLK – 0.5 -
th(BL_NOE) FMC_BL time after FMC_NOE high 0 -
tv(BL_NE) FMC_NEx low to FMC_BL valid - 2
tsu(Data_NE) Data to FMC_NEx high setup time THCLK + 1.5 -
tsu(Data_NOE) Data to FMC_NOE high setup time THCLK + 1 -
th(Data_NE) Data hold time after FMC_NEx high 0 -
th(Data_NOE) Data hold time after FMC_NOE high 0 -
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

Table 91. Asynchronous multiplexed PSRAM/NOR read NWAIT timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK - 1 8THCLK + 2

tw(NOE) FMC_NWE low time 5THCLK – 1 5THCLK + 1 ns

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK + 1.5 -
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 4THCLK + 1 -
invalid
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

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Figure 53. Asynchronous multiplexed PSRAM/NOR write waveforms

tw(NE)

FMC_ NEx

FMC_NOE
tv(NWE_NE) tw(NWE) t h(NE_NWE)

FMC_NWE

tv(A_NE) th(A_NWE)

FMC_ A[25:16] Address

tv(BL_NE) th(BL_NWE)

FMC_ NBL[1:0] NBL

t v(A_NE) t v(Data_NADV) th(Data_NWE)

FMC_ AD[15:0] Address Data

t v(NADV_NE) th(AD_NADV)

tw(NADV)

FMC_NADV

FMC_NWAIT
th(NE_NWAIT)

tsu(NWAIT_NE)
MS32756V1

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Table 92. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 4THCLK - 2 4THCLK+0.5

tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK THCLK + 0.5
tw(NWE) FMC_NWE low time 2THCLK 2THCLK + 0.5
th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK -
tv(A_NE) FMC_NEx low to FMC_A valid - 0
tv(NADV_NE) FMC_NEx low to FMC_NADV low 0.5 1
tw(NADV) FMC_NADV low time THCLK – 0.5 THCLK+ 0.5
ns
FMC_AD(adress) valid hold time after
th(AD_NADV) THCLK – 2 -
FMC_NADV high)
th(A_NWE) Address hold time after FMC_NWE high THCLK -
th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK–2 -
tv(BL_NE) FMC_NEx low to FMC_BL valid - 2
tv(Data_NADV) FMC_NADV high to Data valid - THCLK + 1.5
th(Data_NWE) Data hold time after FMC_NWE high THCLK + 0.5 -
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

Table 93. Asynchronous multiplexed PSRAM/NOR write NWAIT timings(1)(2)

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 9THCLK 9THCLK + 0.5

tw(NWE) FMC_NWE low time 7THCLK 7THCLK + 2 ns

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK + 1.5 -
FMC_NEx hold time after FMC_NWAIT
th(NE_NWAIT) 4THCLK – 1 -
invalid
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

Synchronous waveforms and timings

Figure 54 through Figure 57 represent synchronous waveforms and Table 94 through
Table 97 provide the corresponding timings. The results shown in these tables are obtained
with the following FMC configuration:
 BurstAccessMode = FMC_BurstAccessMode_Enable;
 MemoryType = FMC_MemoryType_CRAM;
 WriteBurst = FMC_WriteBurst_Enable;
 CLKDivision = 1; (0 is not supported, see the STM32F446 reference manual: RM0390)
 DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM

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In all timing tables, the THCLK is the HCLK clock period (with maximum
FMC_CLK = 90 MHz).

Figure 54. Synchronous multiplexed NOR/PSRAM read timings

tw(CLK) tw(CLK) BUSTURN = 0

FMC_CLK

Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)

FMC_NEx
t d(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:16]

td(CLKL-NOEL) td(CLKH-NOEH)

FMC_NOE
td(CLKL-ADIV) th(CLKH-ADV)
t d(CLKL-ADV) tsu(ADV-CLKH) tsu(ADV-CLKH) th(CLKH-ADV)

FMC_AD[15:0] AD[15:0] D1 D2
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) th(CLKH-NWAITV)

MS32757V1

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Table 94. Synchronous multiplexed NOR/PSRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5
td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK - 0.5 -
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2.5
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK -
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 2
ns
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK – 0.5 -
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 0.5
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -
FMC_A/D[15:0] valid data before FMC_CLK
tsu(ADV-CLKH) 1 -
high
th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 3.5 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 3.5 -
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

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Figure 55. Synchronous multiplexed PSRAM write timings

tw(CLK) tw(CLK) BUSTURN = 0

FMC_CLK

Data latency = 0
td(CLKL-NExL) td(CLKH-NExH)

FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:16]

td(CLKL-NWEL) td(CLKH-NWEH)

FMC_NWE
td(CLKL-ADIV) td(CLKL-Data)
td(CLKL-ADV) td(CLKL-Data)

FMC_AD[15:0] AD[15:0] D1 D2

FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b) tsu(NWAITV-CLKH) th(CLKH-NWAITV)

td(CLKH-NBLH)

FMC_NBL

MS32758V1

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Table 95. Synchronous multiplexed PSRAM write timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period, VDD range= 2.7 to 3.6 V 2THCLK - 1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5
td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK + 0.5 -
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK -
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 0
ns
t(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK - 0.5 -
td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 3
td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -
td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 3
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 0 -
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK - 0.5 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 4 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 -
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

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Figure 56. Synchronous non-multiplexed NOR/PSRAM read timings

tw(CLK) tw(CLK)

FMC_CLK
td(CLKL-NExL) td(CLKH-NExH)
Data latency = 0
FMC_NEx
td(CLKL-NADVL) td(CLKL-NADVH)

FMC_NADV
td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:0]

td(CLKL-NOEL) td(CLKH-NOEH)

FMC_NOE
tsu(DV-CLKH) th(CLKH-DV)
tsu(DV-CLKH) th(CLKH-DV)

FMC_D[15:0] D1 D2

tsu(NWAITV-CLKH) th(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 1b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) t h(CLKH-NWAITV)
FMC_NWAIT
(WAITCFG = 0b,
WAITPOL + 0b)
tsu(NWAITV-CLKH) th(CLKH-NWAITV)

MS32759V1

Table 96. Synchronous non-multiplexed NOR/PSRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK -

t(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5
td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK – 0.5 -
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 0
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2.5
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK - ns
td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 2
td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK – 0.5 -
tsu(DV-CLKH) FMC_D[15:0] valid data before FMC_CLK high 1 -
th(CLKH-DV) FMC_D[15:0] valid data after FMC_CLK high 3.5 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 3.5 -

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1. CL = 30 pF.
2. Guaranteed based on test during characterization.

Figure 57. Synchronous non-multiplexed PSRAM write timings

tw(CLK) tw(CLK)

FMC_CLK

td(CLKL-NExL) td(CLKH-NExH)
Data latency = 0
FMC_NEx

td(CLKL-NADVL) td(CLKL-NADVH)
FMC_NADV

td(CLKL-AV) td(CLKH-AIV)

FMC_A[25:0]

td(CLKL-NWEL) td(CLKH-NWEH)
FMC_NWE

td(CLKL-Data) td(CLKL-Data)

FMC_D[15:0] D1 D2

FMC_NWAIT
(WAITCFG = 0b, WAITPOL + 0b) tsu(NWAITV-CLKH) td(CLKH-NBLH)
th(CLKH-NWAITV)
FMC_NBL

MS32760V1

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Table 97. Synchronous non-multiplexed PSRAM write timings(1)(2)

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK – 1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2.5
td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK – 0.5 -
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 0 -
td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 2
td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) 0 -
ns
td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 3
td(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK + 1 -
td(CLKL-Data) FMC_D[15:0] valid data after FMC_CLK low - 2.5
td(CLKL-NBLL) FMC_CLK low to FMC_NBL low 3 -
td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK + 1.5 -
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 1.5 -
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 0 -
1. CL = 30 pF.
2. Guaranteed based on test during characterization.

NAND controller waveforms and timings

Figure 58 through Figure 61 represent synchronous waveforms, and Table 98 and Table 99
provide the corresponding timings. The results shown in this table are obtained with the
following FMC configuration:
 COM.FSMC_SetupTime = 0x01;
 COM.FMC_WaitSetupTime = 0x03;
 COM.FMC_HoldSetupTime = 0x02;
 COM.FMC_HiZSetupTime = 0x01;
 ATT.FMC_SetupTime = 0x01;
 ATT.FMC_WaitSetupTime = 0x03;
 ATT.FMC_HoldSetupTime = 0x02;
 ATT.FMC_HiZSetupTime = 0x01;
 Bank = FMC_Bank_NAND;
 MemoryDataWidth = FMC_MemoryDataWidth_16b;
 ECC = FMC_ECC_Enable;
 ECCPageSize = FMC_ECCPageSize_512Bytes;
 TCLRSetupTime = 0;
 TARSetupTime = 0.
In all timing tables, the THCLK is the HCLK clock period.

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Figure 58. NAND controller waveforms for read access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)

FMC_NWE

td(ALE-NOE) th(NOE-ALE)

FMC_NOE (NRE)

tsu(D-NOE) th(NOE-D)
FMC_D[15:0]

MS32767V1

Figure 59. NAND controller waveforms for write access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NWE) th(NWE-ALE)

FMC_NWE

FMC_NOE (NRE)
tv(NWE-D) th(NWE-D)

FMC_D[15:0]

MS32768V1

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Figure 60. NAND controller waveforms for common memory read access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NOE) th(NOE-ALE)

FMC_NWE

tw(NOE)
FMC_NOE

tsu(D-NOE) th(NOE-D)

FMC_D[15:0]

MS32769V1

Figure 61. NAND controller waveforms for common memory write access

FMC_NCEx

ALE (FMC_A17)
CLE (FMC_A16)
td(ALE-NOE) tw(NWE) th(NOE-ALE)

FMC_NWE

FMC_N OE

td(D-NWE)

tv(NWE-D) th(NWE-D)

FMC_D[15:0]

MS32770V1

Table 98. Switching characteristics for NAND Flash read cycles(1)

Symbol Parameter Min Max Unit

tw(N0E) FMC_NOE low width 4THCLK – 0.5 4THCLK + 0.5

tsu(D-NOE) FMC_D[15-0] valid data before FMC_NOE high 9 -
th(NOE-D) FMC_D[15-0] valid data after FMC_NOE high 2.5 - ns
td(ALE-NOE) FMC_ALE valid before FMC_NOE low - 3THCLK - 0.5
th(NOE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK – 2 -
1. CL = 30 pF.

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Table 99. Switching characteristics for NAND Flash write cycles(1)

Symbol Parameter Min Max Unit

tw(NWE) FMC_NWE low width 4THCLK - 2 4THCLK ns

tv(NWE-D) FMC_NWE low to FMC_D[15-0] valid 0 - ns
th(NWE-D) FMC_NWE high to FMC_D[15-0] invalid 3THCLK – 1 - ns
td(D-NWE) FMC_D[15-0] valid before FMC_NWE high 5THCLK – 3 - ns
td(ALE-NWE) FMC_ALE valid before FMC_NWE low - 3THCLK - 0.5 ns
th(NWE-ALE) FMC_NWE high to FMC_ALE invalid 3THCLK – 2 - ns
1. CL = 30 pF.

SDRAM waveforms and timings

Figure 62. SDRAM read access waveforms (CL = 1)

FMC_SDCLK
td(SDCLKL_AddC)
td(SDCLKL_AddR) th(SDCLKL_AddR)

FMC_A[12:0] Row n Col1 Col2 Coli Coln

th(SDCLKL_AddC)

td(SDCLKL_SNDE) th(SDCLKL_SNDE)

FMC_SDNE[1:0]
td(SDCLKL_NRAS) th(SDCLKL_NRAS)

FMC_SDNRAS

td(SDCLKL_NCAS) th(SDCLKL_NCAS)

FMC_SDNCAS

FMC_SDNWE
tsu(SDCLKH_Data) th(SDCLKH_Data)

FMC_D[31:0] Data1 Data2 Datai Datan

MS32751V2

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Table 100. SDRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(SDCLK) FMC_SDCLK period 2THCLK-0.5 2THCLK+0.5

tsu(SDCLKH _Data) Data input setup time 1 -
th(SDCLKH_Data) Data input hold time 4 -
td(SDCLKL_Add) Address valid time - 3
td(SDCLKL_ SDNE) Chip select valid time - 1.5
ns
th(SDCLKL_SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS) SDNRAS valid time - 1.5
th(SDCLKL_SDNRAS) SDNRAS hold time 0 -
td(SDCLKL_SDNCAS) SDNCAS valid time - 0.5
th(SDCLKL_SDNCAS) SDNCAS hold time 0 -
1. CL = 30 pF on data and address lines. CL=15pF on FMC_SDCLK.
2. Guaranteed based on test during characterization.

Table 101. LPSDR SDRAM read timings(1)(2)

Symbol Parameter Min Max Unit

tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK + 0.5

tsu(SDCLKH _Data) Data input setup time 1 -
th(SDCLKH_Data) Data input hold time 5 -
td(SDCLKL_Add) Address valid time - 3
td(SDCLKL_ SDNE) Chip select valid time - 3
ns
th(SDCLKL_SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS) SDNRAS valid time - 2
th(SDCLKL_SDNRAS) SDNRAS hold time 0 -
td(SDCLKL_SDNCAS) SDNCAS valid time - 2
th(SDCLKL_SDNCAS) SDNCAS hold time 0 -
1. CL = 10 pF.
2. Guaranteed based on test during characterization.

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Figure 63. SDRAM write access waveforms

FMC_SDCLK
td(SDCLKL_AddC)
td(SDCLKL_AddR) th(SDCLKL_AddR)

FMC_A[12:0] Row n Col1 Col2 Coli Coln

th(SDCLKL_AddC)

td(SDCLKL_SNDE) th(SDCLKL_SNDE)

FMC_SDNE[1:0]
td(SDCLKL_NRAS) th(SDCLKL_NRAS)

FMC_SDNRAS

td(SDCLKL_NCAS) th(SDCLKL_NCAS)

FMC_SDNCAS
td(SDCLKL_NWE) th(SDCLKL_NWE)

FMC_SDNWE
td(SDCLKL_Data)

FMC_D[31:0] Data1 Data2 Datai Datan

td(SDCLKL_NBL) th(SDCLKL_Data)

FMC_NBL[3:0]
MS32752V2

Table 102. SDRAM write timings(1)(2)

Symbol Parameter Min Max Unit
F(SDCLK) Frequency of operation - 90 MHz
tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK + 0.5
td(SDCLKL _Data) Data output valid time - 2
th(SDCLKL _Data) Data output hold time 0.5 -
td(SDCLK _Add) Address valid time - 3
td(SDCLKL _SDNWE)) SDNWE valid time - 1.5
th(SDCLKL_SDNWE)) SDNWE hold time 0 -
ns
td(SDCLKL_SDNE)) Chip select valid time - 1.5
th(SDCLKL_SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS) SDNRAS valie time - 1
th(SDCLKL_SDNRAS) SDNRAS hold time 0 -
td(SDCLKL_SDNCAS) SDNCAS valid time - 1
th(SDCLKL_SDNCAS) SDNCAS hold time 0 -
1. CL = 10 pF on data and address line. CL=15 pF on FMC_SDCLK.
2. Guaranteed based on test during characterization.

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Table 103. LPSDR SDRAM write timings(1)(2)

Symbol Parameter Min Max Unit
F(SDCLK) Frequency of operation - 84 MHz
tw(SDCLK) FMC_SDCLK period 2THCLK - 0.5 2THCLK + 0.5
td(SDCLKL _Data) Data output valid time - 5
th(SDCLKL _Data) Data output hold time 0.5 -
td(SDCLK _Add) Address valid time - 3
td(SDCLKL _SDNWE)) SDNWE valid time - 3
th(SDCLKL_SDNWE)) SDNWE hold time 0 -
ns
td(SDCLKL_SDNE)) Chip select valid time - 2.5
th(SDCLKL_ SDNE) Chip select hold time 0 -
td(SDCLKL_SDNRAS) SDNRAS valid time - 2
th(SDCLKL_SDNRAS) SDNRAS hold time 0 -
td(SDCLKL_SDNCAS) SDNCAS valid time - 2
td(SDCLKL_SDNCAS) SDNCAS hold time 0 -
1. CL = 10 pF.
2. Guaranteed based on test during characterization.

6.3.27 Camera interface (DCMI) timing specifications

Unless otherwise specified, the parameters given in Table 104 for DCMI are derived
from tests performed under the ambient temperature, fHCLK frequency and VDD supply
voltage summarized in Table 16, with the following configuration:
 DCMI_PIXCLK polarity: falling
 DCMI_VSYNC and DCMI_HSYNC polarity: high
 Data formats: 14 bits

Table 104. DCMI characteristics

Symbol Parameter Min Max Unit
- Frequency ratio DCMI_PIXCLK/fHCLK - 0.4 -
DCMI_PIXCLK Pixel clock input - 54 MHz
DPixel Pixel clock input duty cycle 30 70 %
tsu(DATA) Data input setup time 1 -
th(DATA) Data input hold time 3.5 -
tsu(HSYNC)
DCMI_HSYNC/DCMI_VSYNC input setup time 2 - ns
tsu(VSYNC)
th(HSYNC)
DCMI_HSYNC/DCMI_VSYNC input hold time 0 -
th(VSYNC)

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Figure 64. DCMI timing diagram

1/DCMI_PIXCLK

DCMI_PIXCLK

tsu(HSYNC) th(HSYNC)

DCMI_HSYNC

tsu(VSYNC) th(HSYNC)

DCMI_VSYNC
tsu(DATA) th(DATA)

DATA[0:13]

MS32414V2

6.3.28 SD/SDIO MMC card host interface (SDIO) characteristics

Unless otherwise specified, the parameters given in Table 105 for the SDIO are derived
from tests performed under the ambient temperature, fPCLK2 frequency and VDD supply
voltage conditions summarized in Table 16, with the following configuration:
 Output speed is set to OSPEEDRy[1:0] = 10
 Capacitive load C = 30 pF
 Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 6.3.17 for more details on the input/output characteristics.

Figure 65. SDIO high-speed mode

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Figure 66. SD default mode

CK
tOVD tOHD
D, CMD
(output)

ai14888

Table 105. Dynamic characteristics: SD / MMC characteristics(1)(2)

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time fPP = 50 MHz 9.5 10.5 -
ns
tW(CKH) Clock high time fPP = 50 MHz 8.5 9.5 -

CMD, D inputs (referenced to CK) in MMC and SD HS mode

tISU Input setup time HS fPP = 50 MHz 1 - -

ns
tIH Input hold time HS fPP = 50 MHz 4.5 - -

CMD, D outputs (referenced to CK) in MMC and SD HS mode

tOV Output valid time HS fPP = 50 MHz - 12.5 13

ns
tOH Output hold time HS fPP = 50 MHz 11 - -

CMD, D inputs (referenced to CK) in SD default mode

tISUD Input setup time SD fPP = 25 MHz 2.5 - -

ns
tIHD Input hold time SD fPP = 25 MHz 5.5 - -

CMD, D outputs (referenced to CK) in SD default mode

tOVD Output valid default time SD fPP = 24 MHz - 3.5 4

ns
tOHD Output hold default time SD fPP = 24 MHz 2 - -

1. Guaranteed based on test during characterization.

2. VDD = 2.7 to 3.6 V.

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Table 106. Dynamic characteristics: eMMC characteristics VDD = 1.7 V to 1.9 V(1)(2)
Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 8/3 -
tW(CKL) Clock low time fPP = 50 MHz 9.5 10.5 -
ns
tW(CKH) Clock high time fPP = 50 MHz 8.5 9.5 -

CMD, D inputs (referenced to CK) in eMMC mode

tISU Input setup time HS fPP = 50 MHz 0.5 - -

ns
tIH Input hold time HS fPP = 50 MHz 7.5 - -

CMD, D outputs (referenced to CK) in eMMC mode

tOV Output valid time HS fPP = 50 MHz - 13.5 14.5

ns
tOH Output hold time HS fPP = 50 MHz 12 - -
1. Guaranteed based on test during characterization.
2. VDD = 2.7 to 3.6 V.

6.3.29 RTC characteristics

Table 107. RTC characteristics

Symbol Parameter Conditions Min Max

- fPCLK1/RTCCLK frequency ratio Any read/write operation from/to an RTC register 4 -

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7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.

7.1 LQFP64 package information

LQFP64 is a 10 x 10 mm, 64-pin low-profile quad flat package.

Figure 67. LQFP64 outline

SEATING PLANE
C
A2
A

0.25 mm
GAUGE PLANE
A1

c
ccc C

A1
D K
D1 L
D3 L1
48 33

32
49

b
E1
E3

64 17

PIN 1 1 16
IDENTIFICATION e
5W_ME_V3

1. Drawing is not to scale

Table 108. LQFP64 mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106

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Table 108. LQFP64 mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

c 0.090 - 0.200 0.0035 - 0.0079

D 11.800 12.000 12.200 0.4646 0.4724 0.4803
D1 9.800 10.000 10.200 0.3858 0.3937 0.4016
D3 - 7.500 - - 0.2953 -
E 11.800 12.000 12.200 0.4646 0.4724 0.4803
E1 9.800 10.000 10.200 0.3858 0.3937 0.4016
E3 - 7.500 - - 0.2953 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
K 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.

Figure 68. LQFP64 recommended footprint

48 33

0.3
49 0.5 32

12.7

10.3

10.3
64 17

1.2
1 16

7.8

12.7

ai14909c

1. Drawing is not to scale.

2. Dimensions are in millimeters.

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Device marking for LQFP64

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
The printed markings may differ depending upon the supply chain.

Figure 69. LQFP64 marking example (package top view)

Revision code
Product identification(1) A
STM32F446
RET6

Date code
Pin 1 identifier Y WW

MSv36549V1

1. Parts marked as “ES”, "E" or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

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7.2 LQFP100 package information

LQFP100 is a 14 x 14 mm, 100-pin low-profile quad flat package.

Figure 70. LQFP100 outline

SEATING PLANE
C

0.25 mm
A2
A

A1

c
GAUGE PLANE

ccc C

A1
K
L
D1
L1
D3

75 51

76 50
b

E1
E3

100 26
PIN 1 1 25
IDENTIFICATION
e 1L_ME_V5

1. Drawing is not to scale.

Table 109. LQPF100 mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 15.800 16.000 16.200 0.6220 0.6299 0.6378
D1 13.800 14.000 14.200 0.5433 0.5512 0.5591
D3 - 12.000 - - 0.4724 -

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Table 109. LQPF100 mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E 15.800 16.000 16.200 0.6220 0.6299 0.6378

E1 13.800 14.000 14.200 0.5433 0.5512 0.5591
E3 - 12.000 - - 0.4724 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.

Figure 71. LQFP100 recommended footprint

75 51

76 50
0.5

0.3

16.7 14.3

100 26

1.2
1 25

12.3

16.7

ai14906c

1. Dimensions are expressed in millimeters.

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Device marking for LQFP100 package

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
The printed markings may differ depending upon the supply chain.

Figure 72. LQFP100 marking example (package top view)

Product identification(1)

STM32F446 Revision code

VCT6 A

Date code
Y WW
Pin 1 identifier

MSv36547V1

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

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7.3 LQFP144 package information

LQFP144 is a 20 x 20mm, 144-pin low-profile quad flat package.

Figure 73. LQFP144, 20 x 20 mm, 144-pin low-profile quad flat package outline
SEATING
PLANE
C
A

A1
A2

c
0.25 mm
A1
A2
A

c
ccc C GAUGE PLANE
0.25 mm
ccc C GAUGE PLANE

A1
A1
D
D L

K
D1 L

K
D1 L1
L1
D3
D3

108 73
108 73
109
72
109
72
b
b

E1
E3

E1
E3

37
144

PIN 1 1 36
IDENTIFICATION 37
144
e
1A_ME_V3
PIN 1 1 36
IDENTIFICATION

e
1A_ME_V4

1. Drawing is not to scale.

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Table 110. LQFP144 mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 21.800 22.000 22.200 0.8583 0.8661 0.874
D1 19.800 20.000 20.200 0.7795 0.7874 0.7953
D3 - 17.500 - - 0.689 -
E 21.800 22.000 22.200 0.8583 0.8661 0.8740
E1 19.800 20.000 20.200 0.7795 0.7874 0.7953
E3 - 17.500 - - 0.6890 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.

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Figure 74. LQFP144 recommended footprint

1.35
108 73

109 0.35 72

0.5

19.9 17.85
22.6

144 37

1 36
19.9

22.6
ai14905e
1. Dimensions are expressed in millimeters.

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Device marking for LQFP144 package

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
The printed markings may differ depending upon the supply chain.

Figure 75. LQFP144 marking example (package top view)

Optional gate mark

Revision code
Product
identification(1) A
STM32F446ZET6

Date code
Y WW

Pin 1 identifier

MSv36548V2

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

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7.4 UFBGA144 7 x 7 mm package information

UFBGA144 is a 7 x 7 mm, 144-pin, 0.50 mm pitch, ultra fine pitch ball grid array package.

Figure 76. UFBGA144 outline

Z Seating plane

ddd Z

A4 A3 A2 A1 A
E1 A1 ball A1 ball X
identifier index area E
e F

A
F

D1 D

e
Y
M

12 1
BOTTOM VIEW Øb (144 balls) TOP VIEW
Ø eee M Z Y X
Ø fff M Z A0AS_ME_V2

1. Drawing is not in scale.

Table 111. UFBGA144 mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 - 0.130 - - 0.0051 -
A4 0.270 0.320 0.370 0.0106 0.0126 0.0146
b 0.230 0.280 0.320 0.0091 0.0110 0.0126
D 6.950 7.000 7.050 0.2736 0.2756 0.2776
D1 5.450 5.500 5.550 0.2146 0.2165 0.2185
E 6.950 7.000 7.050 0.2736 0.2756 0.2776
E1 5.450 5.500 5.550 0.2146 0.2165 0.2185
e - 0.500 - - 0.0197 -
F 0.700 0.750 0.800 0.0276 0.0295 0.0315
ddd - - 0.100 - - 0.0039

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Table 111. UFBGA144 mechanical data (continued)

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

eee - - 0.150 - - 0.0059

fff - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to four decimal digits.

Figure 77. UFBGA144 recommended footprint

Dpad
Dsm

A0AS_FP_V1

Table 112. UFBGA144 recommended PCB design rules (0.50 mm pitch BGA)
Dimension Recommended values

Pitch 0.50 mm
Dpad 0.280 mm
Dsm 0.370 mm typ. (depends on the soldermask registration tolerance)
Stencil opening 0.280 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.120 mm

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Package information STM32F446xC/E

Device marking for UFBGA144 7 x 7 mm package

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
The printed markings may differ depending upon the supply chain.

Figure 78. UFBGA144 7 x 7 mm marking example (package top view)

Product
identification(1) STM32F

446ZEH6

Date code
Ball A1
identifier Y WW

Additional
A information

MSv37953V2

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

184/198 DS10693 Rev 10

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7.5 UFBGA144 10 x 10 mm package information

UFBGA144 is a 10 x 10 mm, 144-pin, 0.80 mm pitch, ultra fine pitch ball grid array package.

Figure 79. UFBGA144 outline

C Seating plane

ddd Z

A4 A3 A2 A1 A
E1 A1 ball A1 ball A
identifier index area E
e F

A
F

D1 D

e
B
M

12 1
BOTTOM VIEW Øb (144 balls) TOP VIEW
Ø eee M C A B
Ø fff M C A02Y_ME_V2

1. Drawing is not to scale.

Table 113. UFBGA144 mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 0.050 0.080 0.110 - 0.0051 -
A4 0.270 0.320 0.370 0.0106 0.0126 0.0146
b 0.360 0.400 0.440 0.0091 0.0110 0.0130
D 9.950 10.000 10.050 0.2736 0.2756 0.2776
D1 8.750 8.800 8.850 0.2343 0.2362 0.2382
E 9.950 10.000 10.050 0.2736 0.2756 0.2776
E1 8.750 8.800 8.850 0.2343 0.2362 0.2382
e 0.750 0.800 0.850 - 0.0197 -
F 0.550 0.600 0.650 0.0177 0.0197 0.0217
ddd - - 0.080 - - 0.0039

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Table 113. UFBGA144 mechanical data (continued)

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

eee - - 0.150 - - 0.0059

fff - - 0.080 - - 0.0020
1. Values in inches are converted from mm and rounded to four decimal digits.

Figure 80. UFBGA144 recommended footprint

Dpad
Dsm

A02Y_FP_V1

Table 114. UFBGA144 recommended PCB design rules (0.80 mm pitch BGA)
Dimension Recommended values

Pitch 0.80 mm
Dpad 0.400 mm
0.550 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.400 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.120 mm

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Device marking for UFBGA144 10 x 10 mm package

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
The printed markings may differ depending upon the supply chain.

Figure 81. UFBGA144 10 x 10 mm marking example (package top view)

STM32F446
Product
identification(1)
ZEJ6
Additional
information
A
Date code
Ball A1
identifier Y WW

MSv37954V2

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

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7.6 WLCSP81 package information

WLCSP81 is a 81-pin, 3.693 x 3.815 mm, 0.4 mm pitch wafer level chip scale package.

Figure 82. WLCSP81 outline

e1 A1 ball bbb Z A1 ball

location location D
e

e
Detail A
E
e2

J
G
9 1 aaa
A3
F
Bottom view A2 Top view
Bump side A Wafer back side
Side view
Detail A
rotated by 90°

eee Z A1

b Seating plane Z
Ø ccc M ZXY
Øddd M Z
A02T_ME_V3

1. Drawing is not to scale.

Table 115. WLCSP81 mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
A - - 0.600 - - 0.0236
A1 - 0.170 - - 0.0067 -
A2 - 0.380 - - 0.0150 -
(2)
A3 - 0.025 - - 0.0010 -
b(3) 0.220 0.250 0.280 0.0087 0.0098 0.0110
D 3.658 3.693 3.728 0.1440 0.1454 0.1468
E 3.780 3.815 3.850 0.1488 0.1502 0.1516
e - 0.400 - - 0.0157 -
e1 - 3.200 - - 0.1260 -
e2 - 3.200 - - 0.1260 -

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Table 115. WLCSP81 mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max
F - 0.2465 - - 0.0097 -
G - 0.3075 - - 0.0121 -
aaa - - 0.100 - - 0.0039
bbb - - 0.100 - - 0.0039
ccc - - 0.100 - - 0.0039
ddd - - 0.050 - - 0.0020
eee - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to four decimal digits.
2. Back side coating
3. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

Figure 83. WLCSP81 recommended footprint

Dpad
Dsm

A02T_FP_V1

Table 116. WLCSP81 recommended PCB design rules (0.4 mm pitch)

Dimension Recommended values

Pitch 0.4 mm
Dpad 0.225 mm
0.290 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.250 mm
Stencil thickness 0.100 mm

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Device marking for WLCSP81 package

The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.
The printed markings may differ depending upon the supply chain.

Figure 84. WLCSP81 marking example (package top view)

Pin 1 identifier

STM32F
Product
identification(1)
446MCY6

Date code Additional

information
Y WW A

MSv37955V1

1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.

190/198 DS10693 Rev 10

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7.7 Thermal characteristics

The maximum chip-junction temperature, TJ max, in degrees Celsius, can be calculated
using the following equation:
TJ max = TA max + (PD max x JA)
where:
 TA max is the maximum ambient temperature in C,
 JA is the package junction-to-ambient thermal resistance, in C/W,
 PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
 PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = (VOL × IOL) + ((VDD – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

Table 117. Package thermal characteristics

Symbol Parameter Value Unit

Thermal resistance junction-ambient

46
LQFP64 - 10 × 10 mm
Thermal resistance junction-ambient
42
LQFP100 - 14 × 14 mm / 0.5 mm pitch
Thermal resistance junction-ambient
33
LQFP144 - 20 × 20 mm / 0.5 mm pitch
JA °C/W
Thermal resistance junction-ambient
51
UFBGA144 - 7 × 7 mm / 0.5 mm pitch
Thermal resistance junction-ambient
48
UFBGA144 - 10 × 10 mm / 0.8 mm pitch
Thermal resistance junction-ambient
48
WLCSP81

Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org.

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Part numbering STM32F446xC/E

8 Part numbering

Example: STM32 F 446 V C T 6 M xxx

Device family
STM32 = Arm-based 32-bit microcontroller

Product type
F = General purpose

Device subfamily
446= STM32F446xC/E

Pin count
M = 81 pins
R = 64 pins
V = 100 pins
Z = 144 pins

Flash memory size

C=256 Kbytes of Flash memory
E=512 Kbytes of Flash memory

Package
H = UFBGA (7 x 7 mm)
J = UFBGA (10 x 10 mm)
T = LQFP
Y = WLCSP

Temperature range
6 = Industrial temperature range, –40 to 85 °C.
7 = Industrial temperature range, –40 to 105 °C.

Option specific package

M = Specific supply chain(1)
blank = Standard

Options
xxx = programmed parts
TR = tape and reel
1. Option available only on STM32F446MEY6MTR part number under specific ordering conditions.

For a list of available options (speed, package, etc.) or for further information on any aspect
of these devices contact your nearest ST sales office.

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Appendix A Application block diagrams

A.1 USB OTG full speed (FS) interface solutions

Figure 85. USB controller configured as peripheral-only and used in full speed mode

VDD VDDUSB
5 V to VDDUSB
Voltage regulator(1)

VBUS

USB Std-B connector

DM
PA11/PB14
OSC_IN DP
PA12/PB15
VSS
OSC_OUT

MSv36558V1

1. External voltage regulator only needed when building a VBUS powered device.
2. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

Figure 86. USB controller configured as host-only and used in full speed mode
VDD

EN
GPIO Current limiter 5 V Pwr
Overcurrent
power switch(1)
GPIO+IRQ
STM32F4xx
VBUS
USB Std-A connector

DM
PA11//PB14
OSC_IN
DP
PA12/PB15
VSS
OSC_OUT

MS19001V4

1. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.
2. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

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Application block diagrams STM32F446xC/E

Figure 87. USB controller configured in dual mode and used in full speed mode
VDD
5 V to VDD
voltage regulator (1)

VDD
EN
GPIO
Current limiter 5 V Pwr
Overcurrent power switch(2)
GPIO+IRQ

STM32F4xx

USBmicro-AB connector
VBUS
PA9/PB13
DM
PA11/PB14
OSC_IN DP
PA12/PB15
(3)
ID
PA10/PB12
OSC_OUT
VSS

MS19002V3

1. External voltage regulator only needed when building a VBUS powered device.
2. The current limiter is required only if the application has to support a VBUS powered device. A basic power
switch can be used if 5 V are available on the application board.
3. The ID pin is required in dual role only.
4. The same application can be developed using the OTG HS in FS mode to achieve enhanced performance
thanks to the large Rx/Tx FIFO and to a dedicated DMA controller.

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A.2 USB OTG high speed (HS) interface solutions

Figure 88. USB controller configured as peripheral, host, or dual-mode
and used in high speed mode

STM32F4xx

DP
FS PHY not connected
USB HS DM
OTG Ctrl
DP
ULPI_CLK
DM
ULPI_D[7:0]
ID(2) USB
ULPI_DIR
ULPI VBUS connector
ULPI_STP
VSS
ULPI_NXT

High speed
OTG PHY

XT1
PLL
24 or 26 MHz XT(1)

MCO1 or MCO2
XI

MS19005V2

1. It is possible to use MCO1 or MCO2 to save a crystal. It is however not mandatory to clock the
STM32F446xx with a 24 or 26 MHz crystal when using USB HS. The above figure only shows an example
of a possible connection.
2. The ID pin is required in dual role only.

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Revision history STM32F446xC/E

Revision history

Table 118. Document revision history

Date Revision Changes

17-Feb-2015 1 Initial release.

Added note 2 inside Table 2
Updated Table 11, Table 23, Table 24, Table 25, Table 26, Table 30,
Table 51, Table 52, Table 53, and Table 61
16-Mar-2015 2 Added condition inside Typical and maximum current consumption and
Additional current consumption
Added FMPI2C characteristics
Added Table 62 and Figure 35
Updated:
– Section 6.3.15: Absolute maximum ratings (electrical sensitivity)
– Section 7: Package information
– Table 2: STM32F446xC/E features and peripheral counts
– Table 13: STM32F446xC/xE WLCSP81 ballout
– Figure 53: ESD absolute maximum ratings
29-May-2015 3 – Figure 54: Synchronous multiplexed NOR/PSRAM read timings
Added:
– Figure 78: UFBGA144 7 x 7 mm marking example (package top
view),
– Figure 81: UFBGA144 10 x 10 mm marking example (package top
view),
– Figure 84: WLCSP81 marking example (package top view)
Updated:
– Figure 14: STM32F446xC/xE UFBGA144 ballout
– Table 10: STM32F446xx pin and ball descriptions
– Table 18: VCAP_1 / VCAP_2 operating conditions
– Section 3.15: Power supply schemes
10-Aug-2015 4
– Section 6.3.2: VCAP_1 / VCAP_2 external capacitor
Added:
– Figure 5: VDDUSB connected to an external independent power
supply
– Notes 3 and 4 below Figure 18: Power supply scheme

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STM32F446xC/E Revision history

Table 118. Document revision history (continued)

Date Revision Changes

Updated:
– Introduction;
– Table 2: STM32F446xC/E features and peripheral counts
– Table 43: Main PLL characteristics
– Title of Table 45: PLLSAI characteristics
– Table 109: LQPF100 mechanical data
03-Nov-2015 5
– Table 118: Ordering information scheme
– Figure 10: STM32F446xC/xE LQFP64 pinout
– Figure 11: STM32F446xC/xE LQFP100 pinout
Added:
– Figure 77: UFBGA144 recommended footprint
– Figure 111: UFBGA144 mechanical data
Updated:
– Section 7: Package information;
– Table 30: Typical current consumption in Run mode, code with data
processing running from Flash memory or RAM, regulator ON (ART
accelerator enabled except prefetch), VDD = 1.7 V
02-Sep-2016 6
– Table 74: ADC characteristics
– Table 85: DAC characteristics
Added:
– Note 3 in Figure 33: Recommended NRST pin protection
– Note 4 in Table 41: HSI oscillator characteristics
Updated document title, Section 6.2: Absolute maximum ratings and
Device marking sections.
Updated Table 8: USART feature comparison and Table 26: Typical and
maximum current consumption in Sleep mode.
Updated Figure 1: Compatible board design for LQFP100 package,
Figure 2: Compatible board for LQFP64 package, Figure 6: Power
14-Oct-2019 7 supply supervisor interconnection with internal reset OFF, Figure 31: FT
I/O input characteristics, Figure 34: I2C bus AC waveforms and
measurement circuit, Figure 43: USB OTG full speed timings: definition
of data signal rise and fall time, Figure 47: Power supply and reference
decoupling (VREF+ not connected to VDDA), Figure 78: UFBGA144 7 x
7 mm marking example (package top view) and Figure 81: UFBGA144
10 x 10 mm marking example (package top view).
Minor text edits across the whole document.
Updated footnote 1 of Table 2: STM32F446xC/E features and peripheral
28-Jul-2020 8 counts and Section 8: Part numbering.
Minor text edits across the whole document.
Updated Table 10: STM32F446xx pin and ball descriptions.
Updated footnotes 1 and 3 of Table 43: Main PLL characteristics.
19-Nov-2020 9 Removed former footnotes 2 from Table 48: Flash memory
programming and Table 49: Flash memory programming with VPP.
Minor text edits across the whole document.
Updated footnote 1 of Table 41: HSI oscillator characteristics.
22-Jan-2021 10
Minor text edits across the whole document.

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 STM32F446xC/E

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