\documentclass[conference]{IEEEtran}

\IEEEoverridecommandlockouts

% The preceding line is only needed to identify funding in the first footnote. If that is unneeded, please
comment it out.

\usepackage{cite}

\usepackage{amsmath,amssymb,amsfonts}

\usepackage{algorithmic}

\usepackage{graphicx}

\usepackage{textcomp}

\usepackage{xcolor}

\def\BibTeX{{\rm B\kern-.05em{\sc i\kern-.025em b}\kern-.08em

T\kern-.1667em\lower.7ex\hbox{E}\kern-.125emX}}

\begin{document}

\title{Dr.Mehran Bashir sb

˚ ˚: ˚

*\\

{\footnotesize \textsuperscript{*}Note:

ASSIGNMENT BASHARAT JAVED ROLL NO.EE-02˚ ˚: ˚

:,

[email protected]}

\thanks{Identify applicable funding agency here. If none, delete this.}

\maketitle

\begin{abstract}
Abstract—We propose here a non-linear GaN HEMT model

for CAD including a trapping effects description consistent with

both small-signal and large-signal operating modes. It takes into

account the dynamics of the traps and then allows to accurately

model the modulated large signal characteristics that are encountered

in telecommunication and radar signals. This model

is elaborated through low-frequency S-parameter measurements

complementary to more classical pulsed-IV characterizations. A

8x75Y “ ACm AlInN/GaN HEMT model was designed and

particularly validated in large-signal pulsed RF operation. It is

also shown that thermal and trapping effects have opposite effects

on the output conductance, thus opening the way for separate

characterizations of the two effects.

Index Terms—Trappings effects, thermal effects, low frequency

S-parameters, CAD non-linear model, RF pulsed operation.

\end{abstract}

\section{ARTIFICIAL INTELLIGENCE}

Gallium Nitride (GaN) High Electron Mobility Transistors

(HEMT) on SiC are now recognized as good candidates for

the development of a number of RF applications and notably

Power Amplifiers (PA) for telecommunications and radars, due

to their high breakdown voltage, their high cut-off frequency

as well as their high temperature capabilities. However they

are still subject to parasitics effects such as thermal effects

and especially trapping effects. Those trapping effects have

been extensively studied using a number of techniques such

as pulsed measurements, load-pull measurements as well as

frequency dispersion measurements. At the same time, models

have been proposed that take those effects into account [1], [2],

[3], and while the effects of traps are well taken into account

in CW conditions, their impacts on dynamic large signal

characteristics remain difficult to understand. They manifest

themselves under modulated signals such as RF pulses or

telecommunications signals. Memory effects are the main consequence

of those trapping effects. In this paper we propose to

investigate the dynamics of those trapping effects using large

signal pulsed load pull measurements as well as low frequency

dispersion measurements. It will be shown that a consistent

nonlinear model can be obtained that allows to describe the full

dynamic behavior of GaN transistors. The paper is organized

as follows: Section II describes the theoretical impact of

traps on the average current obtained under pulsed load pull

conditions. Section III presents the measurements performed

on an AlInN/GaN 8x75μm HEMT and the results obtained

using a large signal nonlinear electrothermal model taking into

account the dynamics of the traps. Finally we conclude and

draw some perspectives .

\section{HOW TO PASTE PICTURES}

One convenient way to identify the impact of trapping

effects is to monitor the average drain current of the transistor

versus an increasing RF input power. It has already been

reported in [1] and [3] that this drain current under class-

AB conditions decreases as the input power increases, contradicting

the expected characteristics. Clearly this behavior

cannot be explained by thermal behavior as far as the channel

temperature sinks when the power increases and would leads,

at least for moderate powers, to an average drain current

enlargement.

\begin{figure}

\centering

\includegraphics[widh=.90\linewidth]{Capture1.PNG}

\caption{Representation of the mechanism induced by traps on the average

drain current.}

\label{fig:my_label}

\end{figure}

Pulsed RF measurements were performed under DC bias on

AlGaN/GaN and InAlN/GaN HEMTs of 8x75x0.25μm2 for a

large number of output loads. For all devices, we obtain the

same shape of the average drain current which is shematized

in Figure 1. The average current decrease is due to the trap

capture, which increases alike to the gate and drain voltage

excursions versus the input power for a CW measurement.

Indeed, the number of ionized traps is roughly proportional

to the maximum value of the drain-source voltage, because

of the disymmetry of the capture and emission time constants

[4]. When the RF power is pulsed, the average drain current

exhibits transients corresponding to the capture and emission

of traps. For example, if the RF input power is pulsed to

0dBm, the current decreases within the pulse due to the capture

of traps. At the end of the pulse, when the input power

is switched-off, there is a discontinuity in the drain current

corresponding to the amount of increase (ΔID1) of the average

drain current, which should have appeared in the absence of

traps as shown in Figure 1. Then the captured carriers are reemitted

and the drain current recovers at its bias level. It can

be seen that the emission time constant for emission remains

in the ms range while the capture one is lower than 10μs.

III. MODELING AND CONSISTENCY VALIDATIONS

A previous large signal model including a description of the

trapping effects [5] was able to the reproduce the dynamics of

the trapping effects versus the swings of the command voltages

Vgs and Vds, i.e. by extension versus the input power and

the load impedances during CW load-pull measurements. This

allowed hence modeling consistently the typical shape of the

average current, leading to an important improvement of the

model accuracy.

For this study, a 8x75μm AlInN/GaN HEMT has been

characterized and modeled. The transistor is processed on SiC

substrate using 0.25μm T-Gates technology. More details on

the technological process of this transistor are given in [6].

The model takes into account thermal, gate-lag and drainlag

effects, and a special care was taken on its accuracy for

CW power performances prediction at 10GHz, for a nominal

bias point Vds=15 to 25V, Ids=250mA/mm. Fig. 2 shows the

measured CW RF power characteristics at 10.24 GHz of a

transistor biased at Vds=20V, Ids=150mA. It delivers, on the

optimum load impedance Zload “ 20 ` j.18Ω and exibit

4.8W/mm output power at 3.5dB of compression with a PAE

of 46% and an associated gain of 11.5dB.

However, using this model, the transient

However, using this model, the transient dynamics of the

average current during pulsed power RF measurements is not

sufficient as was already observed in [7]. Even if the output

current behavior, due to capture and release of charges by

traps is consistent as both processes are taken into account,

the amplitude of the discontinuity of the current (named

ΔID1 in Figure 1), observed at the moment when the RF

signal is switched off, has not enough amplitude. This can

be explained by the fact that the extraction of the drainlag

contribution from pulsed-IV measurements at different

quiescent bias points is a too much rough method to provide

a correct traps induced current dispersion, especially around

the nominal bias point, which is moreover often at low current

in amplifiers. This however allows to model enough precisely

the IV characteristics in the area of the IV network where

-10 -5 0 5 10 15 20 25 30

10

15

20

25

30

35

40

10

20

30

40

50

Pin (dBm)

Gain (dB), Pout (dBm)

PAE ( %)

Pout

Gain

PAE

Fig. 2. Measurements (grey), modeling (blue) of the CW RF performances

of a 8x75μm AlInN/GaN HEMT at 10.24GHz in class AB. ZloadOPT “

p20 ` j.18qΩ.

the current is high and the drain voltage is close to the knee

voltage, and where the traps induced current dispersion limits

the RF load lines swing under RF power drive. This explains

the good capability of the previous model to fit RF power

characteristics despite the use of pulsed IV networks to model

the lag correction terms.

We propose here to use low-frequency S-parameters measurements

[8] instead or in addition to pulsed IV measurements,

which represent a far more precise and convenient

method to extract the drain-lag contribution in the transistors

non-linear models. Precise because the S-parameters do not

provide the current, but directly its derivative. The output

conductance is expressed by gd “ ℜtY p2, 2qu. gd is very

sensitive to the drain-lag trapping effects, in the frequency

range of the emission time constants of these traps.

Convenient because the variations of the output conductance

also provide the detrapping and thermal time constants, and

give the ability to separate both effects, which induce opposite

gd variations. However, traps time constants are particularly

dependent on the electric fields and the temperature conditions

(i.e. the measurement bias point), and these variations are not

taken into account in the drain-lag model for the moment.

Thus, the modeled traps time constants are fixed at the values

measured with low frequency S-parameters at the nominal bias

point of the application.

The amplitude of the correction term is also determined

from the same measurement, at the nominal bias point, in

order to get the correct dispersion level in pulsed RF case,

when RF is switched off and the transistor goes back to its

nominal bias point. This however highlighted an imprecision

of the previous model, in which the dispersion correction term

was added to the command voltage vgs. Indeed, the fit of

the output conductance dispersion induced by trapping effects

leaded to a too high level of dispersion at high current, i.e.

where the RF signal swings during power RF operation, thus

inducing too much power slump in such cases. The model has

been modified in order to add this correction term to the pinchoff

voltage (vp) formulation and also to the parameter IDSS

(determining the steady state current) into the current source

equations. Both contributions are written in order to conserve

the proportionality relationship between vp and IDSS. It allows

to get a more precise dependence of the dispersion versus the

current Ids delivered by the current source

\begin{figure}

\centering

\includegraphics[widh=.90\linewidth]{Capture 2.PNG}

\caption{Representation of the mechanism induced by traps on the average

drain current.}
 \label{fig:my_label}

\end{figure}

A low-frequency S-parameters comparison between measurements

and simulation at Vds=20V, Ids=200mA/mm is

presented at Figure 3. The measurements have been performed

between 5Hz and 500MHz in order to capture all the variations

range of the thermal and trapping effects.

We can observe two main traps having emission time

constants leading to an increase of gd in the range of 2kHz-

8kHz and 20kHz-1MHz, respectively. Thermal effects induce

a decrease of the output conductance. The thermal model was

determined from a three-dimensional finite element (3D-FE)

simulation, and in order to take into account the distribution of

the time constants, five RC-cells (i.e. five time constants) are

necessary. However, the thermal contribution on the output

conductance is quite negligible, as can be seen on the red

curve that corresponds to the model with thermal effects only

(trapping effects are desactivated).

The imaginary part of Y p2, 2q is also presented, and a good

agreement between the measurements and the simulations with

this non-linear electrothermal model can also be observed. One

can see that this imaginary part exhibits two maxima, which

correspond to two kinds of drain-lag inducing traps. Thus this

kind of measurement provides a convenient way to identify

various types of traps in the transistor.

Figure 4 shows a comparison between RF pulsed measurements

and simulations with this model.

\begin{figure}

\centering

\includegraphics[widh=.90\linewidth]{Capture 3.PNG}

\caption{Representation of the mechanism induced by traps on the average

drain current.}

\label{fig:my_label}

\end{figure}

\section{Prepare Your Paper Before Styling}

Before you begin to format your paper, first write and save the content as a

separate text file. Complete all content and organizational editing before

formatting. Please note sections \ref{AA}--\ref{SCM} below for more information on

proofreading, spelling and grammar.

Keep your text and graphic files separate until after the text has been

formatted and styled. Do not number text heads---{\LaTeX} will do that

for you.

\subsection{Abbreviations and Acronyms}\label{AA}

Define abbreviations and acronyms the first time they are used in the text,

even after they have been defined in the abstract. Abbreviations such as

IEEE, SI, MKS, CGS, ac, dc, and rms do not have to be defined. Do not use

abbreviations in the title or heads unless they are unavoidable.

\subsection{Units}

\begin{itemize}
\item Use either SI (MKS) or CGS as primary units. (SI units are encouraged.) English units may be used
as secondary units (in parentheses). An exception would be the use of English units as identifiers in
trade, such as ``3.5-inch disk drive''.

\item Avoid combining SI and CGS units, such as current in amperes and magnetic field in oersteds. This
often leads to confusion because equations do not balance dimensionally. If you must use mixed units,
clearly state the units for each quantity that you use in an equation.

\item Do not mix complete spellings and abbreviations of units: ``Wb/m\textsuperscript{2}'' or ``webers
per square meter'', not ``webers/m\textsuperscript{2}''. Spell out units when they appear in text: ``. . . a
few henries'', not ``. . . a few H''.

\item Use a zero before decimal points: ``0.25'', not ``.25''. Use ``cm\textsuperscript{3}'', not ``cc''.)

\end{itemize}

\subsection{Equations}

Number equations consecutively. To make your

equations more compact, you may use the solidus (~/~), the exp function, or

appropriate exponents. Italicize Roman symbols for quantities and variables,

but not Greek symbols. Use a long dash rather than a hyphen for a minus

sign. Punctuate equations with commas or periods when they are part of a

sentence, as in:

\begin{equation}

a+b=\gamma\label{eq}

\end{equation}

Be sure that the

symbols in your equation have been defined before or immediately following

the equation. Use ``\eqref{eq}'', not ``Eq.~\eqref{eq}'' or ``equation \eqref{eq}'', except at

the beginning of a sentence: ``Equation \eqref{eq} is . . .''

\subsection{\LaTeX-Specific Advice}

Please use ``soft'' (e.g., \verb|\eqref{Eq}|) cross references instead

of ``hard'' references (e.g., \verb|(1)|). That will make it possible

to combine sections, add equations, or change the order of figures or

citations without having to go through the file line by line.

Please don't use the \verb|{eqnarray}| equation environment. Use

\verb|{align}| or \verb|{IEEEeqnarray}| instead. The \verb|{eqnarray}|

environment leaves unsightly spaces around relation symbols.

Please note that the \verb|{subequations}| environment in {\LaTeX}

will increment the main equation counter even when there are no

equation numbers displayed. If you forget that, you might write an

article in which the equation numbers skip from (17) to (20), causing

the copy editors to wonder if you've discovered a new method of

counting.

{\BibTeX} does not work by magic. It doesn't get the bibliographic

data from thin air but from .bib files. If you use {\BibTeX} to produce a

bibliography you must send the .bib files.

{\LaTeX} can't read your mind. If you assign the same label to a

subsubsection and a table, you might find that Table I has been cross

referenced as Table IV-B3.

{\LaTeX} does not have precognitive abilities. If you put a

\verb|\label| command before the command that updates the counter it's

supposed to be using, the label will pick up the last counter to be

cross referenced instead. In particular, a \verb|\label| command

should not go before the caption of a figure or a table.

Do not use \verb|\nonumber| inside the \verb|{array}| environment. It

will not stop equation numbers inside \verb|{array}| (there won't be

any anyway) and it might stop a wanted equation number in the

surrounding equation.

\subsection{Some Common Mistakes}\label{SCM}

\begin{itemize}

\item The word ``data'' is plural, not singular.

\item The subscript for the permeability of vacuum $\mu_{0}$, and other common scientific constants,
is zero with subscript formatting, not a lowercase letter ``o''.

\item In American English, commas, semicolons, periods, question and exclamation marks are located
within quotation marks only when a complete thought or name is cited, such as a title or full quotation.
When quotation marks are used, instead of a bold or italic typeface, to highlight a word or phrase,
punctuation should appear outside of the quotation marks. A parenthetical phrase or statement at the
end of a sentence is punctuated outside of the closing parenthesis (like this). (A parenthetical sentence
is punctuated within the parentheses.)

\item A graph within a graph is an ``inset'', not an ``insert''. The word alternatively is preferred to the
word ``alternately'' (unless you really mean something that alternates).

\item Do not use the word ``essentially'' to mean ``approximately'' or ``effectively''.

\item In your paper title, if the words ``that uses'' can accurately replace the word ``using'', capitalize
the ``u''; if not, keep using lower-cased.

\item Be aware of the different meanings of the homophones ``affect'' and ``effect'', ``complement'' and
``compliment'', ``discreet'' and ``discrete'', ``principal'' and ``principle''.

\item Do not confuse ``imply'' and ``infer''.

\item The prefix ``non'' is not a word; it should be joined to the word it modifies, usually without a
hyphen.

\item There is no period after the ``et'' in the Latin abbreviation ``et al.''.

\item The abbreviation ``i.e.'' means ``that is'', and the abbreviation ``e.g.'' means ``for example''.

\end{itemize}

An excellent style manual for science writers is \cite{b7}.

\subsection{Authors and Affiliations}

\textbf{The class file is designed for, but not limited to, six authors.} A

minimum of one author is required for all conference articles. Author names

should be listed starting from left to right and then moving down to the

next line. This is the author sequence that will be used in future citations

and by indexing services. Names should not be listed in columns nor group by

affiliation. Please keep your affiliations as succinct as possible (for

example, do not differentiate among departments of the same organization).

\subsection{Identify the Headings}

Headings, or heads, are organizational devices that guide the reader through

your paper. There are two types: component heads and text heads.

Component heads identify the different components of your paper and are not

topically subordinate to each other. Examples include Acknowledgments and

References and, for these, the correct style to use is ``Heading 5''. Use

``figure caption'' for your Figure captions, and ``table head'' for your

table title. Run-in heads, such as ``Abstract'', will require you to apply a

style (in this case, italic) in addition to the style provided by the drop

down menu to differentiate the head from the text.

Text heads organize the topics on a relational, hierarchical basis. For

example, the paper title is the primary text head because all subsequent

material relates and elaborates on this one topic. If there are two or more

sub-topics, the next level head (uppercase Roman numerals) should be used

and, conversely, if there are not at least two sub-topics, then no subheads

should be introduced.

\subsection{Figures and Tables}

\paragraph{Positioning Figures and Tables} Place figures and tables at the top and
bottom of columns. Avoid placing them in the middle of columns. Large

figures and tables may span across both columns. Figure captions should be

below the figures; table heads should appear above the tables. Insert

figures and tables after they are cited in the text. Use the abbreviation

``Fig.~\ref{fig}'', even at the beginning of a sentence.

% Please add the following required packages to your document preamble:

% \usepackage{multirow}

\begin{table}[]

\begin{tabular}{|l|lll|}

\hline

\multirow{2}{*}{table head} & \multicolumn{3}{l|}{table column head} \\ \cline{2-4}

& \multicolumn{1}{l|}{table} & \multicolumn{1}{l|}{sher} & sher \\ \hline

copy & \multicolumn{1}{l|}{copy} & \multicolumn{1}{l|}{} & \\ \hline

\end{tabular}

\end{table}

IEEE conference templates contain guidance text for composing and formatting conference papers.
Please ensure that all template text is removed from your conference paper prior to submission to the
conference. Failure to remove the template text from your paper may result in your paper not being
published.

\end{document}