Transistor As A Switch: Electronics and Communication Circuits Lab. Experiment #6

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Electronics and Communication Circuits Lab.

EXPERIMENT #6
Transistor as a Switch
Objective:
- To understand and Design the use of NPN transistor as a Switch

Theory Overview:
- Transistor switches can be used to switch a low voltage DC device (e.g. LED’s,
Relay) ON or OFF by using a transistor in its saturated or cut-off state.

- The areas of operation for a transistor switch are known as the Saturation Region
and the Cut-off Region. This means then that we can ignore the operating Q-point
biasing and voltage divider circuitry required for amplification, and use the
transistor as a switch by driving it back and forth between its “fully-OFF” (cut-off)
and “fully-ON” (saturation) regions as shown below.

The shaded area at the bottom of the curves represents the “Cut-off” region while the
shaded area to the left represents the “Saturation” region of the transistor. Both these
transistor regions are defined as:
1. Cut-off Region
Here the operating conditions of the transistor are zero input base current (IB), zero output
collector current (IC) and maximum collector voltage (VCE) which results in a large
depletion layer and no current flowing through the device. Therefore the transistor is
switched “Fully-OFF”.
Cut-off Characteristics:

B OFF
E

- The input is connected to low level logic.


- VBE < 0.7 V
- VCE = VCC
- IC = 0
V CC
- Rcutoff = I must be very large in “kΩ” or “MΩ”
CEO

2. Saturation Region
Here the transistor will be biased so that the maximum amount of base current is applied,
resulting in maximum collector current resulting in the minimum collector emitter
voltage drop which results in the depletion layer being as small as possible and maximum
current flowing through the transistor. Therefore the transistor is switched “Fully-ON”.
Saturation Characteristics:

B ON
E

- The input is connected to high level logic


- VBE > 0.7 V
- VCE <= VCE(sat) from datasheet
(V CC −V LED −V CE (sat )) V CC −V LED
- I C(sat) =
RC

RC
IC
- IB≅
β min
sat
β in datasheet is hFE

- I B ( sat )=( 5 :10 ) × I B

IC
- I B (sat) >
β dc
sat
Ensure that the following condition is satisfied.

(V ¿ −V BE)
- R B=
I B(sat)
V CE
- R sat = must be very small in “Ω”
sat

IC sat

Materials Needed:
- Multisim Simulator.
- 2N2222 NPN Transistor.
- LED (1.8-2.2 VDC, Max Current 20mA, and Suggested using current 16-18mA)
from datasheet.
- DC Ammeter.
- 5V DC Power Source, 5V VCC.
- Switch.
- Resistors ( RC , RB) We want to calculate them
Procedure:
The transistor in Figure 1 is used as a switch to turn the LED on and off. For example,
when the switch is opened (0 V), the transistor is in cutoff; and since there is no collector
current, the LED does not emit light. When the switch is closed (5 V), the transistor
saturates. This forward-biases the LED, and the resulting collector current through the
LED causes it to emit light. Now we will design this circuit in order to achieve the work
of the transistor as a switch, and through the previous equations and data, we will
calculate RC, RB.

Figure 1

1- When the switch is opened (cutoff) Calculate:

Note: Suppose LED using 2 V, 15 mA.

- VCEO =

- IC =

- IB =

- Rcutoff =

2- When the switch is closed (saturation) Calculate:

- RC =
- IC(sat) =
- IB =

- IB(sat) =

IC
- Check I B (sat) >
β dc
sat

- R B=¿

- Rsat =

3- Use RB and RC value and apply it to the circuit and verify that the transistor is
operating in the cutoff and saturation.

Conclusion:
1- Compare with the discussion mathematical results with the practical
result?

2- Explain what you have concluded from this experiment?

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