NEATEC Basic Vacuum Course Textbook
Uploaded by
Alexander AvdeiNEATEC Basic Vacuum Course Textbook
Uploaded by
Alexander AvdeiVacuum Basics:
A NEATEC
Course Module
for
Semiconductor
Manufacturing
Copyright 2016 NEATEC
Preface and Disclaimer
This is a special vacuum course made by Plasmetrex for The
Northeast Advanced Technological Education Center
(NEATEC). The majority of applications of vacuum technology
here are for semiconductor manufacturing and related plasma
processes. So semiconductor and plasma applications are an
important outcome of the provided knowledge.
For additional and deeper knowledge refer to the Advanced
Vacuum course.
NEATEC, the publisher, understands that the information in
this document is accurate. It has been carefully reviewed for
technical accuracy. In the event that technical or typographical
errors exist, NEATEC reserves the right to make changes to
subsequent editions of this document without prior notice to
the holders of this edition. The reader should consult the
publisher if errors are suspected. In no event shall the
publisher be liable for any damages arising out of or related to
this document or the information contained in it.
All rights reserved (including those of translation into other
languages) by NEATEC, except content marked by an explicit,
differing copyright statement. No part of this document may be
reproduced in any form - by photo printing, micro-films, or any
other means - nor transmitted or translated into machine
language without written permission from the publisher.
Registered names, trademarks, etc., used here, even when
not specifically marked as such, are not to be considered
unprotected by law.
This project is sponsored in part by the National Science
Foundation under ATE Grant #1555699. Any opinions,
findings and conclusions or recommendations expressed in
this material are those of the author(s) and do not necessarily
reflect those of the National Science Foundation.
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Symbol Unit Value
A cm2 Wafer surface
B G Magnetic field
C F Capacitance
CE F Capacitance of electrode sheath
C(W, gap, s, …) F Capacitance (of wall, gap, sheath,…)
D m2 / s Diffusion constant
d cm Length of bulk plasmaG
d cm Skin depth
E V/m Electrical field
Ea eV Activation energy
E+ eV Incident ion energy
e C Elementary charge
F N Electrostatic force
FL N Lorentz force
f Hz Frequency
fRF = ɓRF / 2 p s-1 Generator frequency
ΦΛ,0 V Potential at liner surface
G N Weight
hgap cm Distance between wafer and chuck
Iis,L A Ion saturation current at liner
lL A Mean conduction current at liner
kB J/K Boltzmann constantG
ke,i S/m Electrical conductivity
L or l (PartIV) cm Electrode gap
l cm Plasma length
l~L cm Effective plasma length
Lbulk H Inductance of the bulk
Lcoil H Inductance of the coil
mm Mean free path
λ+ mm Mean free path of ions G
le mm Mean free path of electrons
λD mm Debye length
Symbol Unit Value
me kg Electron mass
mi kg Ion mass
Mr - Relative mass of molecule
mt kg Target massG
N - Number of gas particle
nreactive cm-3 Concentration of reactants
n cm-3 Collision rate
n- cm-3 Density of negative ions
n+ cm-3 Density of positive ions
ne cm-3 Density of electrons
nn cm-3 Density of neutrals
P Pa (Torr) PressureG
r g / cm3 Mass density
P W Power
PRF W RF Power
Pbulk W Electron power (bulk power)
R nm / min Etch rate
RL nm / min Etch rate for layer
RM nm / min Etch rate for mask
rLe mm Larmor or cyclotron radius
R W Resistance
Rbulk W Resistance of the bulk
RE W Resistance of the electrode sheath
Rw W Resistance of the wall sheath
S cm Sheath thickness
S atom / ion Sputter yield
S - Selectivity
ε As / Vm PermittivityG
ɍ mm2 Cross section
kBTe eV Electron temperature
Tgas K (¶C) Gas temperature
Tn K (¶C) Gas (neutrals) temperature
Symbol Unit Value
Tb K (¶C) Boiling point
Tn K (¶C) Gas (neutrals) temperature
Ts K (¶C) Sublimation temperature
TW K (¶C) Wafer temperature
U V Voltage
Ubulk V Voltage of bulk
U(gap,bulk,s,bias,…) V Voltage (gap, bulk, sheath, bias, …)
Uelectrode V Voltage of electrode sheath
Uf V Floating potential
Urf V Voltage of generator
UP = Û V Peak voltage
Usheath V Voltage of sheath
UT V Electron temperature
Uwall V Voltage of wall sheath
Uo eV Binding energy
U s-1 Collision rate
ueff s-1 Effective collision rate
v m/s Mean velocity of reactants
ve m/s Velocity of electrons
ɓ = 2pf s-1 Circular frequency
ɓce s-1 Electron cyclotron frequency
ɓp+ s-1 Ion plasma frequency
ɓpe s-1 Electron plasma frequency
Vchamber cm3 Chamber volume
x - Degree of ionization
Proportional to: ∝
In order off: ∼
Approximate: ≈
SI Units
Fundamentals units
Quantity Unit Abbreviation
Mass kilogram kg
Length meter m
Time second s
Temperature Kelvin K
Electrical current ampere A
Amount of substance mole mol
Selected derived units
Quantity Unit Abbreviation
Frequency Hertz Hz
Force Newton N
Energy Joule J = Ws = Nm
Power Watt W
Electrical charge Coulomb C = As
Electric potential Volt V
Electrical resistance Ohm ΩG
Capacitance Farad F = As/V
Inductance Henry H = Vs/A
Magnetic flux density Tesla T = 10000 GG
Range of parameter for RF discharge
Parameter Range
Pressure P 1 - 1000 Pa (10 – 10000 mTorr)
Power P 50 - 2000 W
Frequency F 50 kHz - 100 MHz
Volume V 1 - 200 l
Electrode area A 300 - 60000 cm2
Magnetic field B 0 - 100 GG
Plasma density N 109 - 1011 cm-3G
Electron temperature Te 1 - 6 VG
Ion energy ei 20 - 2000 V
Fractional ionization xiz 10-6 – 10-3
G
Physical constants
Quantity Symbol Value Units
Speed of light c 299 792 458 m/s
(in vacuum)
Vacuum permeability Ɇ0 1.26 Ý 10-6 H/m
Vacuum permittivity e0 8.85 Ý 10-12 As / Vm
Boltzmann constant kB 1.38 Ý 10-23 Ws / K
Elementary charge e 1.60 Ý 10-19 As
Electron mass me 9.11 Ý 10-31 kg
Atomic mass unit u 1.67 Ý 10-27 kgG
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