AO4406A

30V N-Channel MOSFET

General Description
The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

This device is suitable for high side switch in SMPS and general purpose applications.

Features
VDS 30V
ID (at VGS=10V) 13A

RDS(ON) (at VGS=10V) < 11.5mΩ

RDS(ON) (at VGS = 4.5V) < 15.5mΩ

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TA=25°C 13
ID
Current TA=70°C 10.4 A
C
Pulsed Drain Current IDM 100
Avalanche Current C IAS 22 A
Avalanche energy L=0.1mH C EAS 24 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W

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 AO4406A
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 1.9 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=12A 9.5 11.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 14 17
VGS=4.5V, ID=10A 12.5 15.5 mΩ
gFS Forward Transconductance VDS=5V, ID=12A 45 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 610 760 910 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 88 125 160 pF
Crss Reverse Transfer Capacitance 40 70 100 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 11 14 17 nC
Qg(4.5V) Total Gate Charge 5 6.6 8 nC
VGS=10V, VDS=15V, ID=12A
Qgs Gate Source Charge 1.9 2.4 2.9 nC
Qgd Gate Drain Charge 1.8 3 4.2 nC
tD(on) Turn-On DelayTime 4.4 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.25Ω, 9 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 17 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=500A/µs 5.6 7 8 ns
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 6.4 8 9.6 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

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 AO4406A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 30
10V 6V VDS=5V
5V
80 25
7V

4.5V 20
60
ID (A)

ID(A)
15
4V
40
10 125°C
3.5V
20 5 25°C

VGS=3V
0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

18 1.8

Normalized On-Resistance
16
1.6 VGS=10V
VGS=4.5V ID=12A
14
Ω)
RDS(ON) (mΩ

1.4
17
12
5
1.2 2
10
VGS=4.5V
10
VGS=10V ID=10A
1
8

6 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A)
Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

30 1.0E+02
ID=12A
25 1.0E+01
40
1.0E+00
20
125°C
Ω)
RDS(ON) (mΩ

1.0E-01 125°C
IS (A)

15
1.0E-02
10
1.0E-03 25°C
25°C
5 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4406A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=12A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400
Coss
2
200

Crss
0 0
0 3 6 9 12 15 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 1000.0
TA=25°C
IAR (A) Peak Avalanche Current

TA=100°C
100.0
10µs
TA=150°C RDS(ON)
limited 100µs
ID (Amps)

10.0
10
1.0 1ms
TA=125°C
10ms
100ms
TJ(Max)=150°C 10s
0.1
TA=25°C
DC
0.0
1
0.01 0.1 1 10 100
1 10 100 1000
µs)
Time in avalanche, tA (µ
VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note C) Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)

1000
TA=25°C

100
Power (W)

10

1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)

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 AO4406A
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient
Thermal Resistance

1 RθJA=75°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4406A
30V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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