Scribd Logo
Upload

Welcome to Scribd!

  • 88 views

    2N5109 Silicon NPN Transistor Broadband RF Amplifier: Absolute Maximum Ratings

    Uploaded by

    teconline-1
    The 2N5109 is a silicon NPN transistor designed for broadband RF amplifier applications requiring good linearity. It has a low noise figure of 3.0dB at 200MHz and a high current-gain bandwidth product of 1200MHz minimum at 50mA collector current. The transistor has maximum ratings of 20V collector-emitter voltage, 40V collector-base voltage, and 400mA continuous collector current. It provides a minimum DC current gain of 40 at 50mA collector current and 15V collector-emitter voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2N5109 Silicon NPN Transistor Broadband RF Amplifier: Absolute Maximum Ratings

    Uploaded by

    teconline-1
    88 views2 pages
    The 2N5109 is a silicon NPN transistor designed for broadband RF amplifier applications requiring good linearity. It has a low noise figure of 3.0dB at 200MHz and a high current-gain bandwidth product of 1200MHz minimum at 50mA collector current. The transistor has maximum ratings of 20V collector-emitter voltage, 40V collector-base voltage, and 400mA continuous collector current. It provides a minimum DC current gain of 40 at 50mA collector current and 15V collector-emitter voltage.

    Original Title

    2n5109

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The 2N5109 is a silicon NPN transistor designed for broadband RF amplifier applications requiring good linearity. It has a low noise figure of 3.0dB at 200MHz and a high current-gain bandwidth product of 1200MHz minimum at 50mA collector current. The transistor has maximum ratings of 20V collector-emitter voltage, 40V collector-base voltage, and 400mA continuous collector current. It provides a minimum DC current gain of 40 at 50mA collector current and 15V collector-emitter voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    88 views2 pages

    2N5109 Silicon NPN Transistor Broadband RF Amplifier: Absolute Maximum Ratings

    Uploaded by

    teconline-1
    The 2N5109 is a silicon NPN transistor designed for broadband RF amplifier applications requiring good linearity. It has a low noise figure of 3.0dB at 200MHz and a high current-gain bandwidth product of 1200MHz minimum at 50mA collector current. The transistor has maximum ratings of 20V collector-emitter voltage, 40V collector-base voltage, and 400mA continuous collector current. It provides a minimum DC current gain of 40 at 50mA collector current and 15V collector-emitter voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N5109

    2N5109
    Silicon NPN Transistor
    Broadband RF Amplifier

    Description:
    The 2N5109 is a silicon NPN transistor in a TO39 type
    package designed specifically for broadband
    applications requiring good linearity. Usable as a high
    frequency current mode switch to 200mA.

    WINTransceiver C B E

    Features:

    ● Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz


    ● High Current-Gain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA

    Absolute Maximum Ratings:


    Collector-Emitter Voltage, VCEO 20V
    Collector-Base Voltage, VCBO 40V
    Emitter-Base Voltage, VEBO 3V
    Continuous Collector Current, IC 400mA
    Continuous Base Current, IB 400mA
    Total Device Dissipation (TC = +75°C, Note 1), PD 2.5W
    Derate above +25°C 20mW/°C
    Storage Temperature Range, Tstg -65° to +200°C
    Note 1. Total Device Dissipation at TA = +25°C is 1W.

    Electrical Characteristics: (TC = +25°C unless otherwise specified)

    file:///A|/Downloads%20in%20html%20needs%20conversion/2n5109/2N5109.htm (1 of 2) [8/31/01 2:52:45 PM]


    2N5109

    Parameter Symbol Test Conditions Min Typ Max Unit


    OFF Characteristics
    Collector-Emitter Saturation Voltage VCEO(sus) IC = 5mA, IB = 0 20 - - V
    VCER(sus) IC = 5mA, RBE = 10 Ohm, Note 2 40 - - V
    Collector Cutoff Current ICEO VCE = 15V, IB = 0 - - 20 µA
    ICEX VCE = 15V, VBE = -1.5V, TC = +150°C - - 5 mA
    VCE = 15V, VBE = -1.5V - - 5 mA
    Emitter Cutoff Current IEBO VBE = 3V, IC = 0 - - 100 µA
    ON Characteristics
    DC Current Gain hFE VCE = 5V, IC = 360mA 5 - -
    VCE = 15V, IC = 50mA 40 - 120
    Dynamic Characteristics
    Current-Gain Bandwidth Product fT IC = 50mA, VCE = 15V, f = 200MHz 1200 - - MHz
    Collector-Base Capacitance Ccb VCB = 15V, IE = 0, f = 1MHz - 1.8 3.5 pF
    Noise Figure NF IC = 10mA, VCE = 15V, f = 200MHz - 3 - dB
    Functional Test
    Common-Emitter Amplifier Voltage Gain GVE IC = 50mA, VCC = 15V, f = 50 to 11 - - dB
    216MHz
    Power Input Pin IC = 50mA, VCC = 15V, RS = 50 Ohm, - - 0.1 mW
    Pout = 1.26mW, f = 200MHz
    Note 1. Pulsed through a 25mH inductor; 50% Duty Cycle.

    CB Radio Banner Exchange

    file:///A|/Downloads%20in%20html%20needs%20conversion/2n5109/2N5109.htm (2 of 2) [8/31/01 2:52:45 PM]

    You might also like