STP100NF04

STB100NF04
N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK
STripFET™ II Power MOSFET

General features
Type VDSS RDS(on) ID Pw
STP100NF04 40V < 0.0046Ω 120A 300W
STB100NF04 40V < 0.0046Ω 120A 300W

■ Standard threshold drive 3 3

1 2
■ 100% avalanche tested 1

D²PAK TO-220
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche Internal schematic diagram
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

Applications
■ Switching application

Order codes
Part number Marking Package Packaging
STB100NF04 B100NF04 D²PAK Tape & Reel
STP100NF04 P100NF04 TO-220 Tube

February 2007 Rev 5 1/17

www.st.com 17
Contents: STB100NF04 - STP100NF04

Contents:

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
2.2 Spice Thermal Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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STB100NF04 - STP100NF04 Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source Voltage (VGS=0) 40 V

VGS Gate-source Voltage ±20 V
(1)
ID Drain-current (continuous) at Tc=25°C 120 A
(1)
ID Drain-current (continuous) at Tc=100°C 120 A
IDM(2) Drain-current (pulsed) 480 A
PTOT Total dissipation at Tc=25°C 300 W
Derating factor 2 W/°C
dv/dt(3) Peak Diode Recovery voltage slope 6 V/ns
EAS(4) Single Pulse Avalanche Energy 1.2 J
Tj Operating Junction Temperature
-55 to 175 °C
Tstg Storage Temperature
1. Current limited by package
2. Pulse width limited by safe operating area.
3. ISD ≤120A, di/dt ≤300A/µs, VDD < V(BR)DSS. Tj < Tjmax
4. Starting Tj=25°C, ID=60A, VDD=30V

Table 2. Thermal resistance

Symbol Parameter Value Unit

Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W

Rthj-pcb Thermal Resistance Junction-pcb Max (see Figure 13) °C/W
Rthj-amb Thermal Resistance Junction-ambient (Free Air) Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C

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Electrical characteristics STB100NF04 - STP100NF04

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3. On/off
Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source Breakdown
V(BR)DSS ID=250µA, VGS=0 40 V
Voltage

Zero Gate Voltage Drain VDS=Max Rating 1 µA

IDSS
Current (VGS=0) VDS=Max Rating Tc=125°C 10 µA

Gate-body Leakage
IGSS VGS=±20V ±100 nA
Current (VDS=0)

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2 4 V

Static Drain-source On
RDS(on) VGS=10V, ID=50A 0.0043 0.0046 Ω
Resistance

Table 4. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit

gfs Forward Transconductance VDS=15V, ID=50A 150 S

Ciss Input Capacitance 5100 pF

Coss Output Capacitance VDS=25V, f=1MHz,VGS=0 1300 pF
Crss Reverse Transfer Capacitance 160 pF
Qg Total Gate Charge 110 150 nC
VDD=32V, ID=120A
Qgs Gate-Source Charge 35 nC
VGS=10V
Qgd Gate-Drain Charge 70 nC
td(on)
Turn-on Delay Time 35 ns
tr VDD=20V, ID=60A
Rise time 220 ns
td(off) RG=4.7Ω, VGS=10V
Turn-off delay Time 80 ns
tf (see Figure 21)
Fall Time 50 ns

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STB100NF04 - STP100NF04 Electrical characteristics

Table 5. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain Current 120 A

ISDM(1) Source-drain Current (pulsed) 480 A
VSD(2) Forward on Voltage ISD=120A, VGS=0 1.3 V
trr Reverse Recovery Time 75 ns
ISD=120A, VDD=20V,
Qrr Reverse Recovery Charge 185 nC
di/dt=100A/µs, Tj=150°C
IRRM Reverse recovery Current 5 A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration=300µs, duty cycle 1.5%

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Electrical characteristics STB100NF04 - STP100NF04

2.1 Electrical characteristics (curves)

Figure 1. Power Derating vs. Tc Figure 2. Max Id Current vs. Tc

Figure 3. Output Characteristics Figure 4. Transfer Characteristics

Figure 5. Transconductance Figure 6. Static Drain-source on Resistance

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STB100NF04 - STP100NF04 Electrical characteristics

Figure 7. Gate Charge vs. Gate-source Figure 8. Capacitance Variations

Voltage

Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs.
vs. Temperature Temperature

Figure 11. Source-Drain Diode Forward Figure 12. Normalized BVdss vs. Temperature
Characteristics

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Electrical characteristics STB100NF04 - STP100NF04

Figure 13. Thermal Resistance Rthj-pcb vs. Figure 14. Thermal Impedance
PCB Copper Area

Figure 15. Max Power Dissipation vs. PCB Figure 16. Safe Operating Area
Copper Area

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STB100NF04 - STP100NF04 Electrical characteristics

Figure 17. Allowable Iav vs. Time in Avalanche

The previous curve give the safe operating area for unclamped inductive loads, single pulse
or repetitive, under the following conditions:
PD(AVE) = 0.5*(1.3*BVDSS*IAV)
EAS(AR) = PD(AVE) * tAV

Where:
IAV is the Allowable Current in Avalanche
PD(AVE) is the Average Power Dissipation in Avalanche (Single Pulse)
tAV is the Time in Avalanche

To de rate above 25°C, at fixed IAV, the following equation must be applied:
IAV=2*(Tjmax - TCASE) / (1.3*BVDSS * Zth)

Where:
Zth= K*Rth is the value coming from Normalized Thermal Response at fixed pulse width
equal to TAV

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Electrical characteristics STB100NF04 - STP100NF04

2.2 Spice thermal model

Table 6. Spice parameter

Parameter Node Value

CTHERM1 5-4 0.011

CTHERM1 4-3 0.0012
CTHERM3 3-2 0.05
CTHERM4 2-1 0.1

RTHERM1 5-4 0.09

RTHERM2 4-3 0.02
RTHERM3 3-2 0.11
RTHERM4 2-1 0.17

Figure 18. Spice model schematic

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STB100NF04 - STP100NF04 Test circuit

3 Test circuit

Figure 19. Unclamped inductive load test Figure 20. Unclamped inductive waveform
circuit

Figure 21. Switching times test circuit for Figure 22. Gate charge test circuit
resistive load

Figure 23. Test circuit for inductive load Figure 24. Switching time waveform
switching

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Package mechanical data STB100NF04 - STP100NF04

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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STB100NF04 - STP100NF04 Package mechanical data

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116

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Package mechanical data STB100NF04 - STP100NF04

D2PAK MECHANICAL DATA

TO-247 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

A1 2.49 2.69 0.098 0.106

A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036

B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393

E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

M 2.4 3.2 0.094 0.126

R 0.4 0.015

V2 0º 4º
3

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STB100NF04 - STP100NF04 Packaging mechanical data

5 Packaging mechanical data

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT

REEL MECHANICAL DATA

mm inch
DIM.
MIN. MAX. MIN. MAX.
A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

BASE QTY BULK QTY

TAPE MECHANICAL DATA
1000 1000
mm inch
DIM.
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type

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Revision history STB100NF04 - STP100NF04

6 Revision history

Table 7. Revision history

Date Revision Changes

23-Mar-2005 2 New template

01-Mar-2006 3 Removed I²PAK and inserted D²PAK.
04-Sep-2006 4 New template, no content change
20-Feb-2007 5 Typo mistake on page 1

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STB100NF04 - STP100NF04

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