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    2 SB 1370

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    wilson
    This document provides specifications for a TO-220F bipolar transistor. Key features include a high breakdown voltage, low reverse cut-off current, low saturation voltage, and power dissipation of 2W at 25°C ambient or 30W at 25°C case temperature. The transistor has maximum ratings for collector-base voltage of -60V, collector-emitter voltage of -60V, and emitter-base voltage of -5V. Electrical characteristics include a DC current gain of 100-320, collector-emitter saturation voltage below -1.5V, and transition frequency of 15MHz.

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    2 SB 1370

    Uploaded by

    wilson
    38 views2 pages
    This document provides specifications for a TO-220F bipolar transistor. Key features include a high breakdown voltage, low reverse cut-off current, low saturation voltage, and power dissipation of 2W at 25°C ambient or 30W at 25°C case temperature. The transistor has maximum ratings for collector-base voltage of -60V, collector-emitter voltage of -60V, and emitter-base voltage of -5V. Electrical characteristics include a DC current gain of 100-320, collector-emitter saturation voltage below -1.5V, and transition frequency of 15MHz.

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    transistores y varios

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    2sb1370

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    This document provides specifications for a TO-220F bipolar transistor. Key features include a high breakdown voltage, low reverse cut-off current, low saturation voltage, and power dissipation of 2W at 25°C ambient or 30W at 25°C case temperature. The transistor has maximum ratings for collector-base voltage of -60V, collector-emitter voltage of -60V, and emitter-base voltage of -5V. Electrical characteristics include a DC current gain of 100-320, collector-emitter saturation voltage below -1.5V, and transition frequency of 15MHz.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    38 views2 pages

    2 SB 1370

    Uploaded by

    wilson
    This document provides specifications for a TO-220F bipolar transistor. Key features include a high breakdown voltage, low reverse cut-off current, low saturation voltage, and power dissipation of 2W at 25°C ambient or 30W at 25°C case temperature. The transistor has maximum ratings for collector-base voltage of -60V, collector-emitter voltage of -60V, and emitter-base voltage of -5V. Electrical characteristics include a DC current gain of 100-320, collector-emitter saturation voltage below -1.5V, and transition frequency of 15MHz.

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    2SB1370(PNP)

    TO-220F Bipolar Transistors


    TO-220F
    1. BASE

    2. COLLECTOR

    3. EMITTE
    1 2 3

    Features
     Breakdown Voltage High
     Reverse Cut-off Current Small
     Saturation Voltage Low
     Collector Power dissipation
    PCM : 2 W (Tamb=25℃)
    30 W (Tcase=25℃)
    Dimensions in inches and (millimeters)
    MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
    Symbol Parameter Value Units
    VCBO Collector-Base Voltage -60 V
    VCEO Collector-Emitter Voltage -60 V
    VEBO Emitter-Base Voltage -5 V
    IC Collector Current -Continuous -3 A

    TJ Junction temperature 150 ℃


    Tstg Storage temperature -55-150 ℃

    ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)


    Parameter Symbol Test conditions MIN TYP MAX UNIT

    Collector-base breakdown voltage V(BR)CBO IC=-50μA, IE=0 -60 V

    Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -60 V

    Emitter-base breakdown voltage V(BR)EBO IE=-50μA, IC=0 -5 V

    Collector cut-off current ICBO VCB=-60V, IE=0 -10 μA

    Emitter cut-off current IEBO VEB=-4V, IC=0 -10 μA

    DC current gain hFE * VCE=-5V, IC=-500mA 100 320

    Collector-emitter saturation voltage VCE(sat) * IC=-2A, IB=-0.2A -1.5 V

    Base-emitter saturation voltage VBE(sat) * IC=-2A, IB=-0.2A -1.5 V

    Transition frequency fT VCE=-5V, IC=-500mA,f=5MHz 15 MHz

    Out capacitance Cob VCB= -10 V ,f=1MHZ 80 pF

    *Pulse test: tp≤300μS, δ≤0.02.


    CLASSIFICATION OF hFE
    Rank E F

    Range 100-200 160-320


    2SB1370(PNP)
    TO-220F Bipolar Transistors

    Typical Characteristics

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