Power Systems World ‘97, Baltimore Convention Center, Baltimore, Maryland, September 6-12, 1997

Chapter 3.4
1
MTO™ Thyristor Power Switches
Rogério Rodrigues, Dante Piccone, Alex Huanga, and Rik De Donckerb
Silicon Power Corporation (SPCO)
a
Virginia Power Electronics Center of Virginia Polytechnic Institute and State University
b
Formerly with SPCO, presently with ISEA, RWTH, Aachen, Germany

The MTO™ (MOS Turn Off )Thyristor, a replacement for the GTO (Gate Turn Off Thyristor), is a
MOSFET-GTO hybrid for power conversion in the 1 to 20 MVA range. The MTO thyristor is
significantly more efficient than the GTO by requiring a drastically smaller gate drive while
simultaneously reducing storage time, thus providing improved performance and reduction of system
costs. Other power bipolar-MOS devices are believed to have a ceiling of blocking voltage at about 3kV,
but the design rules for voltage blocking applicable to the MTO thyristor are similar to those used for
other thyristors that presently achieve 9kV. In addition, the MTO thyristor easily lends itself to
conventional double-side-cooled packaging. This paper describes the concept of the MTO thyristor,
presents results of measurements made on experimental 4.5kV and 6kV devices and interprets these with
the help of numerical simulations, reports on the current status of development, and discusses
specifications of MTO thyristor models currently offered.

The MTO™ thyristor, is being developed by SPCO1, 2 because of the unique features that it offers for
high voltage (>3kV), high power (1 to 20 MVA) applications requiring a fast gate-turn-off switch, such as
static condenser/uninterruptible power supplies (STATCON/UPS) for power quality systems, motor
drives for ship propulsion, and inverters for ac locomotives. Here, we will show that the advantages of the
MTO thyristor span all the relevant points of view from fundamental power circuits, to power system cost
and reliability, to device design and development, and to packaging techniques.
The thyristor-like topology shared by the GTO and the MTO is widely preferred for applications in
high power electronics due to its nearly-ideal bistable switch behavior, with low power dissipation in both
its “on” and “off” states. The MTO thyristor behaves like a GTO during turn-on but it offers radical
advantages in turn-off that make it a revolutionary GTO direct replacement:
The small turn-off gate drive required by the MTO thyristor allows for drastic cost reduction and
increased reliability compared to GTO-based system designs. The main drawback of GTO-based designs
is the high-pulse-current drive circuit needed for its low impedance gate at turn-off. This circuit must
provide a turn-off current whose typical peak amplitude is 35% of the current to be controlled. This
requires large gate-drive transistors. The MTO thyristor provides the same turn-off functionality as the
GTO but uses a gate drive that needs to supply only the signal-level voltage necessary to turn MOSFET
transistors on and off.
The MTO thyristor is readily turned off with a substantially reduced storage time compared to that
observed in typical GTO applications, which makes the MTO thyristor a faster and more efficient switch
than the GTO.
The design and development of the MTO thyristor benefits directly from knowledge gained from
work on other thyristors and involves little risk. Unlike the blocking junctions of other bipolar-MOS

MTO™ Thyristor is a trademark of the Silicon Power COrporation

1

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 Power Systems World ‘97, Baltimore Convention Center, Baltimore, Maryland, September 6-12, 1997

switches (IGBT, MCT3,4) which are believed to become impractical above 3kV in silicon technology,
those of the MTO thyristor are planar, they can be terminated using well developed techniques, and
therefore they readily support the same high voltages as standard disc-type thyristors which presently
achieve 9kV. Even though a monolithic MTO thyristor is proposed by SPCO that is potentially more
suitable for large scale manufacturing (Figure 3.4.1a), the interim hybrid MTO thyristor structure, which
is the main object of this chapter (Figure 3.4.1b), consisting of a discrete GTO and of a discrete
MOSFET, was promptly demonstrated and is presently in small scale production. In addition, in the
monolithic version, the thin insulating layer necessary for the gate of the imbedded MOSFET does not
have to withstand the main blocking voltage (unlike the case of IGBT and MCT that require ultra reliable
gate oxides). For these reasons, the MTO thyristor is also ideal and is currently being adopted for SiC
power device development.
Lastly, because the MTO thyristor lends itself to conventional double-side-cooled packaging, it can
handle high overload currents.
Description Of The MTO Thyristor
Two functionally similar versions of the MTO thyristor are devised by SPCO: the monolithic version
(Figure 3.4.1.a) and the hybrid version (Figure 3.4.1.b). The circuit symbol used for the MTO thyristor is
represented in Figure 3.4.2. At present only the hybrid version has been developed and is in small-scale
production.

(a)
K
G1 Cathode
Turn-On
Gate
¥ FET

¥ G2
Turn-Off
¥

N+ Gate

Repetitive Cell Structure Forward

Blocking
N Junction
N+

P+
A
Anode

(b)
Figure 3.4.1: Structure of the MOS Turn-Off Thyristor (MTO): (a) Monolithic Design and (b)
Hybrid Design

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G1 G2

Figure 3.4.2: Circuit Symbol for the MTO Thyristor

The MTO thyristor is based on a four-layer latching structure and enjoys the benefits of a nearly-
ideal bistable switch behavior, with low power dissipation in both its “on” and “off” states. In this device
turn-on is achieved by injection of a current pulse at the turn-on gate, G1, in the same fashion as in a
conventional GTO. This pulse provides base current for the upper NPN transistor whose collector
current, in turn, provides base current for the lower PNP transistor and leads to regenerative action. In
relation to the turn-on of the MCT, this mechanism has the advantage of not requiring the upper P-base to
be segmented, with planar diffused terminations. Instead, the upper P-base of the MTO thyristor extends
all over the silicon slice and it can be terminated by a beveled edge. Therefore the forward blocking
junction of the MTO thyristor can reach 100% of the breakdown voltage of the ideal parallel-plane
junction, while devices with planar terminations are restricted to only a fraction of this voltage3. Turn-off
is achieved by application of a voltage pulse to the turn-off gate, G2, in the same fashion as in an MCT.
This voltage pulse switches an FET structure to its on state, thereby shorting emitter and base of the upper
NPN transistor and ceasing regenerative action.
Because the MTO thyristor can be designed with fairly large cathode mesas (like the GTO), it is
straightforward to encase it in a pressure-mounted, double-side-cooled package, the PRESSPAK.
Experimental Results
The circuit used for turn-off tests of MTO thyristors is represented in Figure 3.4.3. Figure 3.4.4
shows turn-off waveforms of an MTO thyristor that was designed and tested successfully for a forward
off-state repetitive peak voltage of 6kV. The figure shows the device turning off 500A with 3000V
reapplied voltage. The small storage times measured (ts, see definition in Figure 3.4.5), 1µsec to 2µsec,
are an indication that high (unit or near unit) gain is achieved at turn off and that the MTO thyristor is
suitable for operation at higher switching speed than the GTO with a conventional gate drive circuit. In
addition, a GTO with 9kV blocking capability was recently manufactured at SPCO that turned off an
impressive 4000A with 5000V reapplied voltage. This is a fundamental step in the development of a 9kV
MTO thyristor, whose design is based on GTO technology.
Table 3.4.1 contains some of the most significant results obtained by SPCO on the turn-off capability
of GTO and MTO thyristors.

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R=1k•

La=2µH

L=200µH

SCR sw
•
*
Diode used for tests
of asymmetrical
V MTO thyristor only.
Cv=2000µF

MTO
thyristor
Cs=3µF • G ”on”
Rs=50k•

* • G ”off”

Figure 3.4.3: Circuit Used For Turn-Off Tests of MTO Thyristors

Figure 3.4.4: Turn-off Waveforms for a 6kV MTO Device: 500A Are Turned Off With 3000V
Reapplied Voltage

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Figure 3.4.5: Definition of Storage Time

Device Nom. Device Current Reapplie Temp Snubber Storage Zero Yr.
Block. diam. turned d voltage . Cap./Res. time voltage
Voltg. (mm) off (V) (µF/Ÿ (µs) switchin
(kV) ITQ (A) (°C) g
circuit ?
GTO
a 4.5 77 3000 3000 115 6µF/5Ÿ 17 N 95
b 9 77 4000 5000 110 6µF 19 Y 96
9 77 3500 5680 110 6µF 18.2 Y 96
MTO
a 4.5 53 600 2200 115 3µF 1.5 Y 96
b 6 53 600 500 115 3µF <1 Y 96
c 6 53 500 3000 115 3µF 1 Y 95

Table 3.4.1: GTO/MTO Device Milestones at SPCO

Device Simulation: Switching and RBSOA

The switching of a 53mm, 4.5kV silicon MTO thyristor was analyzed. The results presented were
obtained under isothermal conditions. It is well known that the actual turn-off capability is affected by
internally generated heat and can be significantly decreased unless the package and heat sink are properly
designed. Isothermal simulations are nevertheless very useful in assessing the ultimate turn-off capability
of a given device structure and in comparing the capabilities of different structures. The high-voltage
semiconductor structure of the MTO thyristor is represented in the device simulations by one half of its

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 Power Systems World ‘97, Baltimore Convention Center, Baltimore, Maryland, September 6-12, 1997

unit cell. The results presented are scaled to full device dimensions. An electron lifetime of 60µsec and a
hole lifetime of 15µsec are assumed to characterize the undoped silicon, and these yield a forward voltage
drop of approximately 4V at 1000A on-state current. The turn-off simulations were performed using the
circuit of Figure 3.4.6.
Results of the simulation of inductive on-off switching at 600A/3kV are shown in Figure 3.4.7. In
this simulation, the snubber capacitor Cs is 3µF and Ls, the snubber parasitic inductance, is 0.13 µH. As
Figure 3.4.7 shows, the MTO thyristor is successfully turned off. The storage time elapsed before the
anode current starts to fall is about 1µsec. There is a voltage spike of about 170V at the beginning of the
voltage rise. This spike increases with the size of the parasitic snubber inductance, Ls, and may eventually
lead to re-triggering and to device failure. When the voltage reaches 3kV it starts to oscillate. The
frequency of this oscillation is determined mainly by parasitic inductance L a and by capacitance Cs, and
the amount of overshoot is dependent on the inductor current I. The turn-off gain (Igate/Ianode)
corresponding to Figure 3.4.7 is shown in Figure 3.4.8. The turn-off gain is less than unit during the
initial phase of current fall during which the NPN transistor is being turned off. At about 1.5µsec the
turn-off gain becomes unity and the MTO thyristor enters an open-base PNP transistor turn-off mode,
during which the upper base junction is reverse biased and starts to block voltage. At higher current levels
the MTO thyristor will fail to turn off. The phenomenon of re-triggering seems to take place when the
power density level reaches approximately 200kW/cm2. At these power levels, a very large number of
carriers is generated by impact ionization.

La=2µH

MTO
V Ls=0.13µH
Cv=2000µF

Rs=50k•
Cs=3µF

Lm=0.83nH

Figure 3.4.6: Circuit Used In The Simulations Of The MTO Thyristor

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Figure 3.4.7: Voltage And Current Transients During Turn-Off Of The MTO Thyristor At
600A/3kv With Cs= 3µF, Ls= 0.13µH. The Device Is Successfully Turned Off

Figure 3.4.8: Turn-Off Gain Of The MTO Thyristor Corresponding To Figure 3.4.7. At About
1.5µsec The Turn-Off Gain Becomes Unity
An analysis of current flow lines and of potential distribution indicates that, in this type of failure,
the breakdown of the pnp transistor occurs first, followed by a current increase which eventually turns on
also the NPN transistor. In addition to the power limitation just discussed, the current turn-off capability

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of the MTO thyristor is also bounded by the resistance of the path formed by the turn-off MOSFET and
by the upper base layer underneath the MTO thyristor finger:
Imax_turn-off = VBI / (Ron_MOSFET + Requiv_lateral) (1)
In Equation (1) VBI is the built-in voltage of the emitter to upper base junction and Requiv_lateral is
the equivalent lateral resistance of the gate path. A set of simulations was performed for currents nearing
this limit (approximately 1680A) and for low applied voltages. These showed that parasitic inductance
may be the practical limitation to the turn-off of the MTO thyristor at high current and low voltage.
The RBSOA of the MTO thyristor shown in Figure 3.4.9 was extracted using a dozen inductive
switching simulations of the type just described. The applied voltage and current were increased until the
device failed to turn-off, a turn-off failure being characterized by the increase of the anode current, after
the initial current fall, to a value comparable to or higher than that of the current being interrupted. The
highest-power successful turn-off data point was used as one RBSOA point. Two different snubber
capacitors, Cs = 3µF and Cs= 6µF were used and it can be seen that the larger capacitor yields a slightly
larger RBSOA. The RBSOA of the MTO thyristor has the shape of a typical power-constant-limited
RBSOA.
The simulations described here were performed using commercially available tools from Silvaco
International, Inc5 and from TMA, Inc6.

Current (A) MTO RBSOA

1800

1600 Cs=6uF

1400
Cs=3uF
1200

1000

800

600

400

200
500 1000 1500 2000 2500 3000 3500 4000 4500

Voltage (V)
Figure 3.4.9: Reverse Bias Safe Operating Area (RBSOA) Of The 4500V MTO Thyristor For Two
Different Snubber Capacitors

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Development Status
Currently, engineering samples of the MTO thyristor have been supplied to customers for evaluation.
Small quantities of symmetrical 2800V and 4500V MTO thyristors are available from SPCO as these
models are in small scale production. Engineering samples of asymmetrical versions are also available.
9000V devices are in process at the time of writing and it is expected that the first test results on these
will be available very soon. The tailoring of the double-side-cooled package for the MTO thyristor as well
as the cell and gate interconnect strategies are critical for performance and are being further optimized.
SPCO will also market the MTO thyristor through its incorporation in power conditioning systems.
The company is presently designing and preparing to manufacture:
• Motor drives for ship propulsion: 12 to 52 MegaWatt motor drive for propulsion of the Navy’s
"more-electric ship". The system will rectify 4.16kVAC, 60 Hz to 6kVDC and then invert to nominal
4.16kVAC, variable voltage, variable frequency, employing soft switching inverters based on 9kV
MTO thyristors.
• Statcon/UPS: The MTO thyristor will be used in a Static Condenser/ Uninterruptible Power Supply
(Statcon/UPS) for power quality systems. This system will be based on 2.4kV, 3.3 MVA three-phase
inverter modules using 6kV MTO thyristors. A system based on 9kV devices is also being studied
and will operate at the 4.16kV standard voltage.
• Inverters for ac locomotives: MTO thyristors will be used to build inverters for AC locomotives,
which will replace 2.5kV GTO-based units in current use.
Specifications Of MTO Thyristor Models Currently Offered By SPCO
The maximum ratings and characteristics of these devices are shown in Table3.4.2.
The SDG250 is a reverse blocking GTO thyristor (turned on and off by applying positive and
negative gate currents, respectively, through a common gate terminal). The SDM170 series are new
reverse blocking MTO thyristors which are turned-on by applying a positive gate current, as for the GTO,
but turned-off by applying a positive signal voltage. Separate gate terminals G1 and G2 are used for this
purpose.

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Bipolar Type GTO Thyristor MTO Thyristor MTO Thyristor

Silicon Dia. (mm) 77 53 53

PRE-PRODUCTION
(b) (b)
SYMBOL UNITS Rating or Characteristic SDG250HK XSDM170HK XSDM171DR
VDRM V Max. Off-State and Reverse 4500 4500 2800
VRRM Blocking Voltage 4500 4500 2800
TJ o
C Junction Temperature Range 0 to 115 0 to 115 0 to 115
(a) (a)
f max Hz Operating frequency 1000 2500 2500
ITQSM A Non-rep Turn-off Current 2500 500 500
ITQRM A Rep. Turn-Off Current 2000 500 500
IRMS A RMS On-State Current 800 250 250
(a) (a)
VTM V On-State Voltage @ IT 4.0 6.0 4.8
8 ms pulse,initial TJ=115oC @ 2000 A @ 500 A @ 500 A
( a) ( a)
ITSM o 6000 6000
A 8.3ms surge pulse @ 115 C 12000
QRR uC Peak Recovery charge @ 4800 2500 2500
o
100 A/us , TJ=115 C
IFG Turn-On Gate Current 30 30 30
IFGL A @ 30A/µsec terminal G1 terminal G1
Hold-On Gate Current 8 8 8
IRG A Turn-Off Gate Current 600 NA NA
@ 60A/µsec
V Turn-Off FET Gate Voltage NA terminal G2 terminal G2
+15 +15
ts µs Storage Time @ Turn-off 15 - 20 1-2 1-2
VRGO V Hold-Off Gate Bias (cont.) -30 30 30
VRGW Max. Peak Gate Voltage 8 8 8
RthJ-C o
C/W Thermal Resistance Junction 0.0139 0.028 0.028
to Case, double side cooling
F lb External Clamping Force 5600 - 7000 4500 - 5000 4500 - 5000
Package Style D2 C C

Table 3.4.2: Symmetrical Bipolar Gate Turn-Off Thyristors - Maximum Ratings and
Characteristics
(a) The operating frequency is based on the ARCP soft-switching resonant pole converter. The
upper limit of operating frequency indicated here, 2500Hz, is consistent with tail times in the order
of 150µsec which must be observed to prevent re-firing. On-state voltage (VTM) and surge pulse
handling capability (ITSM) are improved as design frequency limit is lowered. Specifications to be
upgraded as further circuit experience is gained.
(b) Prefix X signifies a device that is in small scale production and undergoing development.

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Figure 3.4.10 (a) represents the double-side cooled, pressure mountable package (PRESSPAK) that
houses SPCO’s MTO thyristors. In addition to the large area anode and cathode contacts (which act
simultaneously as electrical and thermal contacts) and to the hermetic feed-through contact for the turn-
on gate, the package of the MTO thyristor has an additional feed-through contact for the off-gate signal.
Figure 3.4.10 (b) shows the thermal impedance and thermal resistance of the 53mm MTO thyristor
package.
The turn-off energy of the XSDM171DR is 0.4 Joule/pulse at the typical conditions of IT=500A,
VDM=2400V, VD=2200V (or only 0.18 Joule/pulse with IT=500A , VDM=1100V, VD=900V) when
TJ=115°C, G2=+15V and a 6µF unpolarized snubber is used.. The turn-off energy of the XSDM170HK is
0.8 Joule/pulse at the typical conditions of IT=500A, VDM=2200V, VD=2000V, TJ=115°C, G2=+15V.
The turn-off energy of the XSBM170HK is 0.8 Joule/pulse at the typical conditions of IT=500A,
VDM=2200V, VD=2000V, TJ=115’& DQG *2=+15V. The thermal resistance of the package is consistent
with the power dissipated by the device at the maximum operating frequency at the specified conditions.

J
G2

CL
20° ±5°

CL
20° ±5°

G1

A Ø
B Ø

B Ø

A Ø = 2.96 in ( 75.2 mm)

B Ø = 1.90 in ( 48.3 mm)
D = 1.07 in ( 27.2 mm)

(b)
(a)
Figure 3.4.10: (a) Double-Side Cooled, Pressure Mountable Package (PRESSPAK) That Houses
MTO Thyristors (b) Thermal Impedance and Thermal Resistance of the 53mm MTO Thyristor
Package

Gate Drive Requirements

The turn-on gate of the 53mm MTO thyristor needs a current pulse of 30 - 60A for 5 -10µsec for
turn-on and a back porch of about 8A for sustaining the on-state after the device is fully turned on. The
rms current applied to the turn-on gate should not exceed 12A and the gate voltage of turn-on gate
terminal should be +15V. For turning off the device, a +15V pulse should be applied to the turn-off gate
terminal. The time diagram of Figure 3.4.11 illustrates these requirements.

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30A
MTO TURN-ON
IG1
MTO TURN-OFF
100A/µs
100A/µs

0A
8A

+15V
IG1

+15V
VG2
0V
VG2

0V
1µs

0.5µs
1µs

0.5µs

Figure 3.4.11: Electrical Requirements for the MTO Thyristor Gate Driver

Conclusion
We have shown that the MTO thyristor achieves the same ratings as the GTO (1 to 20 MVA range)
but requires a much smaller gate drive and reduces storage time by a factor of ten. Thus, the MTO
thyristor provides improved performance and reduction of system costs. The MTO thyristor is on its way
to revolutionizing the market of high power DC/AC and DC/DC converters where it will advantageously
replace the GTO. No other known competitor seems to offer a viable alternative at the high ratings of
these devices.
References
[1] D. Piccone, J. Barrow, W. Tobin, and R. De Doncker, “MTO - A MOS Turn-Off Disc-Type Thyristor
for High Voltage Power Conversion,” Proceedings of the IEEE’s Industrial Applications Society
Meeting, Orlando, FL, 1995.
[2] R. Rodrigues, D. Piccone, A. Huang, and R. De Doncker, “A Very High Voltage, Large Area
MTO™(MOS Turn Off Thyristor) for PEBB Applications,” Government Microcircuit Applications
Conference, GOMAC, 10-13 March 1997, Riviera Hotel, Las Vegas, Nevada (Session 13), Digest of
Papers, pp. 437-440.
[3] Baliga, B. J., “Modern Power Devices,” Krieger Publ. Co., Malabar, Florida, 1992.
[4] Temple, V. A. K., “MOS Controlled thyristors,” IEEE International Electron Devices Meeting
Conference Digest, Abstract 10.7, pp. 282-285 (1984).
[5] Silvaco International, Inc., Santa Clara, CA.
[6] Technology Modeling Associates, Inc., Sunnyvale. CA.

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