Chapter 7 Typical Troubles and Troubleshooting

1. Troubleshooting 7-2
2. IGBT Test Procedures 7-7
3. Typical Troubles and Troubleshooting 7-8

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 This chapter describes typical troubles and how to deal with them.

1. Troubleshooting

When abnormalities such as device failure occurs, it is necessary to clarify the situation and determine the cause
before taking countermeasures. Referring to Table 7-1, please investigate the failure mode and analyze the
causes of abnormalities by observing the irregularities outside of the device. If the cause cannot be determined
by using Table 7-1, use the detailed diagram shown in Fig.7-1(a-f) to help your investigation.

Table.7-1 Device destruction mode and cause estimation

External abnormalities Cause Device failure mode Check point
SCSOA failure Matching of the operation locus and
Arm short After short circuit detection, when protection is applied (turn-off), the overvoltage exceeds
(overvoltage) device withstand capability during
circuit SCSOA and the device is destroyed
destruction arm short circuit
Overheat (short
toff increased due to insufficient -VGE, dead
Series arm Insufficient dead time circuit withstand Check that toff and dead time match
time setting error
short circuit capability) failure
(upper and dv/dt shoot through and causes short circuit
Short Insufficient -VGE, long gate wiring Check for dv/dt erroneous turn-on
lower arm failure
circuit
short
circuit) Gate drive circuit malfunction, logic circuit
Short circuit failure due to noise etc. Circuit malfunction check
malfunction SCSOA and
overheat failure
Output Check the conditions during failure,
Wiring mistake, abnormal wire contact, load short circuit
short circuit matching of device withstand
Ground capability and protection circuit,
Wiring mistake, abnormal wire contact.
fault ground fault wiring condition
Logic circuit malfunction Logic signal
Overload (overcurrent) Overcurrent flows Overheat
Review of overcurrent protection
Overcurrent protection setting error
setting value
Excessive input voltage
Excessive Overvoltage exceeding the device withstand Review of overvoltage protection
C-E overvoltage
DC voltage voltage is applied to C-E level
Overvoltage protection setting error

Matching of turn-off operation locus

Overvoltage at turn-off exceeds RBSOA RBSOA
and RBSOA, review of snubber circuit

Matching of overvoltage and device

Overvolta
Overvoltage during FWD reverse recovery exceeds device withstand voltage withstand voltage, review of snubber
ge
Excessive circuit
overvoltage
Gate signal interruption, etc., that result in very short Logic or gate drive circuit
C-E overvoltage Logic and gate signals
off pulse, causes turn-off → turn-on in very short time malfunction due to noise
intervals (on the order of several hundred ns) and
Gate signal during high current
generate excessive reverse recovery overvoltage that
Electromagnetic induction from the operation / twisted wire of gate signal
exceeds the device withstand voltage (hereinafter,
main circuit to the gate signal line line / distance from main circuit to
short off pulse reverse recovery phenomenon)
gate signal line

DC-DC converter malfunction

Drive supply voltage VGE drops below the design value, VCE increases, heat
Drive supply voltage rise is too slow Overheat Check circuit
drop generation (loss) increases, causing destruction

Gate signal wiring disconnected

Check working status (static

Static electricity is applied to G-E
electricity countermeasures)
Gate overvoltage G-E overvoltage
The gate wiring is too long, resulting in overvoltage exceeding G-E withstand voltage Check gate voltage

Destruction by applying C-E voltage (on voltage / withstand voltage measurement, etc.) while Overheat
Driving with open gate Check gate voltage
the gate is open destruction

Insufficient Loose terminal mounting screws

heat Check heat dissipation condition
dissipation Insufficient heat dissipation capacity causes the Insufficient application of thermal grease
Overheat Overheat
capacity device to overheat beyond Tvj max.
Thermal Cooling fan malfunction Check logic circuit
runaway
Stress applied to terminals from external
Stress
wiring Electrical wiring Stress generated at terminals /
The terminal soldering part inside the product is
Stress disconnection inside mounting state of product and other
disconnected due to stress fatigue Vibration of other mounting parts applied
Vibration the product (open) parts
stress to the terminals

The application conditions (environment, temperature change, assembly conditions at the Failure mode is
Reliability time of mounting, storage condition, etc.) of the device and the reliability of the product does different for each Check based on Fig.7-1
not match, causing failure of wiring inside the product, insulation structure, appearance, etc. case

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 Destruction of discrete IGBT Destruction of IGBT RBSOA deviation A

Gate overvoltage B

Junction overheating C

Destruction of FWD D

Reliability E

Dielectric breakdown F

Fig.7-1 IGBT failure analysis diagram (A-E symbols are connected to the following figures)

A RBSOA deviation
［ Origin of failure］

Overcurrent protection
Excessive current Excessive turn-off current Abnormal control PCB
circuit malfunction

Gate drive circuit

Series arm short circuit Abnormal control PCB
malfunction

Gate drive circuit error

Insufficient dead
Abnormal control PCB
time

Output short circuit Abnormal load

Ground fault Abnormal load

Excessive power supply
Overvoltage Abnormal input voltage
voltage

Abnormal regenerative
Motor regenerative operation circuit

Overvoltage protection Abnormal control PCB

circuit malfunction

Snubber resistance
Insufficient discharge of
Abnormal snubber circuit disconnection
snubber

Abnormal gate drive

Turn-off operation during
circuit
short circuit
Abnormal control PCB

Excessive overvoltage during

D
reverse recovery (FWD)

Fig.7-1(a) Mode A: RBSOA deviation

B Gate overvoltage
［ Origin of failure ］

No measures against static

Static electricity Manufactural failure
electricity

Overvoltage Oscillation Long gate wiring

Long gate wiring

L・di/dt voltage

Fig.7-1(b) Mode B: Gate overvoltage

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 Junction
C ［Origin of failure］
overheating
Abnormal gate
On-state loss
VCE (sat) increase Insufficient +VGE drive circuit
increase
Abnormal control
power circuit
Overcurrent
Over Abnormal control
IC increase protection circuit
current PCB
malfunction

Gate drive Abnormal control

Series arm short
circuit PCB
circuit
malfunction Abnormal gate
drive circuit
Insufficient dead Abnormal control
time PCB
Output short circuirt Abnormal load

Ground fault Abnormal load

Abnormal control
Overload PCB
Abnormal load
Switching loss Number of switching Abnormal control
Carrier frequency increase
increase increase PCB

Abnormal snubber
circuit
di/dt malfunction
Abnormal gate
drive circuit

Gate drive circuit Abnormal control

malfunction PCB
Abnormal gate
drive circuit
Turn-on time Abnormal gate
Eon increase +VGE decrease
increase drive circuit

Abnormal gate
RG value increase
drive circuit

Excessive turn-on Excessive snubber Snubber circuit

current discharge current error

Series arm Insufficient Abnormal control

short circuit dead time PCB

Turn-off time Abnormal gate

Eoff increase -VGE decrease
increase drive circuit

RG value Abnormal gate

increase drive circuit

Series arm short Insufficient dead Abnormal control

circuit time PCB
Abnormal gate
drive circuit
Contact thermal resistance Insufficient
Insufficient tightening force during mounting
increase tightening torque

Excessive heat sink Heat sink warpage

warpage failure
Insufficient
adjustment of
Insufficient volume of thermal grease
thermal grease
volume

Insufficient
Decreased cooling
Case temperature rise Heat sink clogging dustproof
capacity
measures

Cooling fan speed decrease or Abnormal cooling

stop fan

Abnormal rise in ambient Partial overheating of Abnormal cooling

temperature the stack system

Abnormal
Temperature protection device
temperature
malfunction
protection device

Fig.7-1(c) Mode C: Junction overheating

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 Destruction of
D
FWD
［ Origin of failure ］
Excessive
junction On-state loss increase Overload Power factor decrease
temperature rise
Abnormal load

Abnormal control PCB

Number of Abnormal snubber

Switching loss increase dv / dt malfunction
switching increase circuit
Abnormal gate drive
circuit
Gate drive signal
Abnormal control PCB
malfunction
Abnormal gate drive
circuit

Carrier frequency increase Abnormal control PCB

Contact thermal
Insufficient tightening
resistance Insufficient tightening force during mounting
torque
increase

Excessive heat sink warpage Heat sink warp failure

Insufficient adjustment
Insufficient volume of thermal grease of thermal grease
volume

Case temperature Decreased cooling Insufficient dustproof

Heat sink clogging
rise capacity measures

Cooling fan speed

Abnormal cooling fan
decrease or stop

Abnormal rise in Partial overheating Abnormal cooling

ambient temperature of the stack system

Abnormal temperature
Temperature protection device malfunction
protection device
Excessive overvoltage Abnormal snubber
Overvoltage
during reverse recovery circuit
di/dt increase at Abnormal gate drive
+VGE increase
turn-on circuit

RG value Abnormal gate drive

decrease circuit

Gate signal
Short off pulse reverse interruption Abnormal gate drive
recovery phenomenon due to noise, circuit
etc.
Abnormal control PCB
Excessive overvoltage during
A
IGBT turn-off

Fig.7-1(d) Mode D: Destruction of FWD

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 E Reliabillity
［ Origin of failure ］
Destruction caused by
External force, load Loading during product storage Loading conditions
handling

Stress applied on terminals

Terminal stress
during mounting

Insufficient screw
Excessive contact resistance Terminal part
tightening torque

Excessive vibration during

Vibration transportation (products, Transport condition
equipment)

Product terminal
Loose fixing during product
(check stress due to
mounting
vibration)

Dropping, collisions, etc. during

Shock Transport condition
transportation

Assembly conditions
Heat resistance of Excessive overheat when
during product
soldered terminals soldering terminals
mounting

Storage in abnormal Storage in corrosive gas

Storage conditions
condition atmosphere

Storage in environment prone to

condensation

Storage in dusty environment

Poor uniformity of the main circuit,

Destruction in parallel Main circuit wiring
causing transient current
connection uniformity
concentration and current oscillation

Long-term storage at high temperature (High temperature

Reliability (lifetime) Storage conditions
storage)

Long-term storage in low temperature (Low temperature storage)

※For the results of the Long-term storage in hot and humid conditions (Temperature
reliability test humidity storage)
conducted by Fuji
Electric, please refer to
the specifications or Thermal stress fatigue caused by repeated gradual rise and fall of Matching between
the reliability test result product temperature (Temperature cycle, ΔTC power cycle) working conditions
report. and product lifetime
Thermal stress failure caused by a sudden rise or fall of product
temperature (Thermal shock)

Thermal stress failure of internal wiring of products caused by

changes in semiconductor chip temperature due to sudden
changes in load, etc. (ΔTvj power cycle)

Long-term voltage application in high

Long-term use at
temperature (High temperature bias
high temperature
for C-E and G-E)

Long-term voltage application in hot Long-term use in

and humid conditions (Temperature hot and humid
humidity bias (THB)) conditions

Fig.7-1(e) Mode E: Reliability

F Dielectric breakdown
［ Origin of failure ］

Improper insulation
Insulation sheet
sheet installation

Fig.7-1(f) Mode F: Dielectric breakdown

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 2. IGBT Test Procedures

The following items can be determined by using a transistor curve tracer (hereinafter as CT) to check
the faulty IGBT.
① G-E leakage current ② C-E leakage current (G-E must be shorted)
Other test equipment, such as a Volt-ohm multi-meter that is capable of measuring voltage/resistance
and so forth to determine failures, can be used to help diagnose the fault.

＜G-E check＞
As shown in Fig.7-2, measure the G-E leakage current or resistance, with C-E shorted. If the
product is normal, the leakage current should be several hundreds nA and the resistance should be
several tens of MΩ to infinity. If the leakage current is more than a few nA or the resistance value is
less than a few MΩ, the device may be defective.
Do not apply G-E voltage in excess of 20V. When using a Volt-ohm multi-meter, make sure the
internal battery voltage is below 20V.

C
Short C-E

G
CT or V-ohm
E multi-meter

Measure G-E leakage

E current or resistance

Fig.7-2 G-E check

＜C-E check＞
As shown in Fig.7-3, measure the C-E leakage current or resistance, with G-E shorted. If the IGBT
is normal, the leakage current should be below ICES max. specified in the datasheet. Please note the
following items.
① Be sure to connect C to (+) and E to (-). Reverse connections will conduct the FWD thus making
measurement impossible.
② Do not apply voltage higher than the rated value. Applying voltage higher than the rated value
may destroy the device.

CT or V-ohm + G
multi-meter
- Short G-E

Measure C-E leakage E

current or resistance
E

Fig.7-3 C-E check

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 3. Typical Troubles and Troubleshooting

＜How to avoid dv/dt shoot through during FWD reverse recovery＞

This section describes how to avoid dv/dt shoot through of the IGBT during FWD reverse recovery.
Fig.7-4 shows the causes of dv/dt shoot through. In this fig., IGBT2 is reverse biased. If IGBT1
changes from off to on, FWD2 on the opposite arm goes in to reverse recover mode. At the same
time, the voltage potentials of IGBT2 and FWD2 in the off-state rise, and dv/dt is generated according
to the switching time of IGBT1. Since IGBT1 and IGBT2 have Cres, current I = Cres · dv/dt is generated
through Cres. This current flow through RG, resulting in rise of VGE. If this VGE exceeds the sum of the
reverse bias voltage of IGBT2 and the threshold voltage VGE (th), IGBT2 will be turned-on, resulting in
short circuit of IGBT1 and IGBT2.

IGBT1 FWD1

RG

ｃ
070-3765-4209
I =Cres・dv/dt

FWD2
- RG
IGBT2
+ Off state

Fig.7-4 Principle of dv/dt shoot through

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 Fig.7-5 shows the method to avoid the shoot through.

CGE High-RG
-VGE

(a) Additional CGE (b) Increase of -VGE (c) Increase of RG

Fig.7-5 How to avoid dv/dt shoot through

There are three methods, which are CGE addition, increase of -VGE and increase of RG. Check the
effects of these measures as they differ depending on the gate drive circuit. Also, check the effect of
these measures on switching loss.
The method to add CGE is the way to decrease the current flowing through RG by passing through
CGE. However, in order to charge/discharge the additional CGE, switching speed becomes slower.
Thus, just adding CGE results in increase switching loss. However, by reducing RG and adding CGE, it
is possible to avoid the shoot through without increasing switching loss.
Recommended CGE is about two times the value of Cies described in the specification sheet, and
recommended RG is about half the value before adding CGE.

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 ＜Energizing main circuit voltage when G-E is open＞
When checking the characteristics of a single device, if voltage is applied to C-E when G-E is open,
current (i) will flow through Cres of the IGBT as shown in Fig.7-6. As a result, G-E capacitance is
charged and the gate potential rises, causing the IGBT to turn-on. Thus, IC flows and heat is generated,
which may cause destruction. When driving the IGBT, be sure to drive it with a G-E signal. Also, be sure
to discharge the main circuit voltage (C-E) to 0V before switching the gate signal.
Fig.7-7 shows an example of on-voltage measurement circuit. The measurement sequence is described
with reference to this measurement circuit. First, turn-off the gate drive unit (GDU) (VGE = 0V). Then
turn-on SW1 to apply C-E voltage. Next, apply predefined forward bias voltage from the GDU to
energize the IGBT, and measures the on-voltage. Lastly, turn-off the gate circuit and turn-off SW 1. This
sequencing will allow for the safe measurement of device characteristics without risking destruction.

C(Collector)
i
IC

G(Gate)

RGE

E(Emitter)

Fig.7-6 IGBT behavior when G-E is open

SW 1 R1 D1

DUT
CRO
+

G -
D2 R2 +

-
GDU R3

DUT:IGBT under test, GDU:Gate drive circuit, G:Variable AC power supply

CRO:Oscilloscope, R1, R2:Protective resistance,
R3:Current measurement non-inductive resistance, D1,D2:Diode, SW 1:Switch

Fig.7-7 On-voltage measurement circuit

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 ＜Diode reverse recovery from transient on-state (short off pulse reverse recovery)＞
If very short off pulses are generated when gate signal interruption happens due to noise while driving
the IGBT, excessive reverse recovery overvoltage will occur. This phenomenon is called the short off
pulse reverse recovery. Fig.7-8 shows the timing chart of this phenomenon.
In Fig.7-9, when an off signal Tw is generated at VGE during period Ton in which IGBT2 is on, IGBT2 is
turned off while FWD1 on the opposite arm side is turned on, and IGBT2 is immediately turned on again
while FWD1 goes into reverse recovery. Normally, reverse recovery started after sufficient carriers are
accumulated in the FWD. On the other hand, in the short off pulse reverse recovery, FWD goes into
reverse recovery without sufficient carrier accumulation. As a result, the depletion layer spreads rapidly in
the FWD, causing steep di/dt and dv/dt, and very large C-E (A-K) overvoltage as shown in the dotted line
in Fig.7-8. If the overvoltage exceeds the device voltage rating, the device may be destroyed. When
designing the equipment, be careful not to design a circuit that will generate such short gate signal off
pulse.

TON TW
IGBT1 VAK
0 FWD1
VGE RG

ｃ
070-3765-4209 ｃ
070-3765-4209
RG FWD2
VAK IGBT2
VGE
0

Fig.7-8 Waveforms during short off pulse reverse recovery Fig.7-9 Circuit diagram

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 ＜Precautions in parallel connection＞
When using IGBT to control large current, IGBTs may be connected in parallel. If the current is not
balanced among the IGBTs, current may concentrate on one device and destroy it. The electrical
characteristics of the IGBT as well as the wiring design, affect the current balance between parallel
connected IGBT. In order to maintain current balance it is necessary to match the VCE(sat) values of all
devices. When connecting in parallel, we recommend to use products from the same product lot.
When the main circuit wiring is uneven, uneven voltage is generated in the inductance of each wiring
due to di/dt during switching, and oscillating current flows through the control side wiring loop of the
emitter connected in parallel, causing the gate voltage to oscillate. This oscillation may cause the IGBT
to malfunction.
Balanced current sharing can be achieved by using symmetrical wiring to prevent the above-
mentioned IGBT malfunction (see Fig. 7-10).

LC 1 LC 2
RC1 RC2

GDU
+
VCC
- LL 1 RL1 RL2 LL 2

GDU

LE 1 RE1 LE 2
RE2

Wiring so that RC1=RC2, RL1=RL2, RE1=RE2,LC1=LC2, LL1=LL2,LE1=LE2

Fig.7-10 Equivalent circuit of parallel connection

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 Fig.7-11(1) shows the oscillation phenomenon when the wiring inductance of the emitter is made
extremely unbalanced.

iG1 iG1

iG2 iG2

iC11 iC11

iC21 iC21

(1) When emitter inductance is unbalanced (2) When common mode coil is inserted
in gate emitter wiring

Fig.7-11 Waveforms of 2 parallel connection

A common mode coil can be inserted in each gate emitter wiring to eliminate the loop current in the
emitter. Fig.7-11 (2) shows the waveforms with the common mode coil. Compared with Fig.7-11(1),
oscillation is suppressed.

Common mode coil

GDU
+
VCC

-
Common mode coil

GDU

Fig.7-12 Parallel circuit with common mode coil inserted

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