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    Isc N-Channel MOSFET Transistor 75N08: INCHANGE Semiconductor Product Specification

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    mateus santos
    The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor model 75N08. Key features include a drain current of 75A at 25°C and a drain-source on-resistance of 0.015 ohms or less. It is suitable for use as a primary switch in high-efficiency DC-DC converters and applications requiring low gate drive. Applications include solenoid drivers, DC motor control, DC-DC converters, and automotive uses.

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    Isc N-Channel MOSFET Transistor 75N08: INCHANGE Semiconductor Product Specification

    Uploaded by

    mateus santos
    53 views2 pages
    The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor model 75N08. Key features include a drain current of 75A at 25°C and a drain-source on-resistance of 0.015 ohms or less. It is suitable for use as a primary switch in high-efficiency DC-DC converters and applications requiring low gate drive. Applications include solenoid drivers, DC motor control, DC-DC converters, and automotive uses.

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    Data Sheet

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    The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor model 75N08. Key features include a drain current of 75A at 25°C and a drain-source on-resistance of 0.015 ohms or less. It is suitable for use as a primary switch in high-efficiency DC-DC converters and applications requiring low gate drive. Applications include solenoid drivers, DC motor control, DC-DC converters, and automotive uses.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    53 views2 pages

    Isc N-Channel MOSFET Transistor 75N08: INCHANGE Semiconductor Product Specification

    Uploaded by

    mateus santos
    The document provides product specifications for the INCHANGE Semiconductor isc N-Channel MOSFET Transistor model 75N08. Key features include a drain current of 75A at 25°C and a drain-source on-resistance of 0.015 ohms or less. It is suitable for use as a primary switch in high-efficiency DC-DC converters and applications requiring low gate drive. Applications include solenoid drivers, DC motor control, DC-DC converters, and automotive uses.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    INCHANGE Semiconductor isc Product Specification

    isc N-Channel MOSFET Transistor 75N08

    FEATURES
    ·Drain Current –ID= 75A@ TC=25℃
    ·Drain Source Voltage-
    : VDSS= 80V(Min)
    ·Static Drain-Source On-Resistance
    : RDS(on) = 0.015Ω(Max)

    DESCRIPTION
    Suitable as primary switch in advanced high-efficiency, high-
    frequency isolated DC-DC converters for Telecom and Computer
    applications. It is also intended for any application with low gate
    drive requirements .

    APPLICATIONS
    ·Solenoid and relay drivers
    ·DC motor control
    ·DC-DC converters DC
    ·Automotive environment

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)


    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 80 V

    VGS Gate-Source Voltage-Continuous ±20 V

    ID Drain Current-Continuous 75 A

    IDM Drain Current-Single Pluse (tp≤10μs) 300 A

    PD Total Dissipation @TC=25℃ 137 W

    TJ Max. Operating Junction Temperature 150 ℃

    Tstg Storage Temperature -55~150 ℃

    THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 0.91 ℃/W

    Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W

    isc website：www.iscsemi.cn 1
    isc&iscsemi is registered trademark.

    PDF pdfFactory Pro www.fineprint.cn


    INCHANGE Semiconductor isc Product Specification

    isc N-Channel MOSFET Transistor 75N08

    ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 80 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 37.5A 0.015 Ω

    IGSS Gate-Body Leakage Current VGS= ±20V; VDS= 0 ±100 nA

    VDS= 80V; VGS= 0 1.0


    IDSS Zero Gate Voltage Drain Current μA
    VDS= 60V; VGS= 0; Tj= 125℃ 10

    VSD Forward On-Voltage IS= 75A; VGS=0 1.4 V

    isc website：www.iscsemi.cn 2
    isc&iscsemi is registered trademark.

    PDF pdfFactory Pro www.fineprint.cn

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