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    Datasheet Mosfet Ha210n06

    Uploaded by

    Matheus Locatelli
    This document provides specifications for a 60V 210A N-channel MOSFET. Some key details: - It has a maximum drain-source voltage of 60V, on-resistance of 4mΩ, and can handle continuous drain current of 210A. - Applications include power supplies, UPS systems, and battery management systems. - Electrical characteristics include breakdown voltage, threshold voltage, switching times, and capacitances. Thermal characteristics provide junction-to-case and junction-to-ambient thermal resistances. - Graphs show typical operating characteristics like drain current versus drain-source voltage and drain-source resistance versus gate-source voltage. - Package dimensions are provided

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    © All Rights Reserved
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    Datasheet Mosfet Ha210n06

    Uploaded by

    Matheus Locatelli
    470 views6 pages
    This document provides specifications for a 60V 210A N-channel MOSFET. Some key details: - It has a maximum drain-source voltage of 60V, on-resistance of 4mΩ, and can handle continuous drain current of 210A. - Applications include power supplies, UPS systems, and battery management systems. - Electrical characteristics include breakdown voltage, threshold voltage, switching times, and capacitances. Thermal characteristics provide junction-to-case and junction-to-ambient thermal resistances. - Graphs show typical operating characteristics like drain current versus drain-source voltage and drain-source resistance versus gate-source voltage. - Package dimensions are provided

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    Mosfet

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    This document provides specifications for a 60V 210A N-channel MOSFET. Some key details: - It has a maximum drain-source voltage of 60V, on-resistance of 4mΩ, and can handle continuous drain current of 210A. - Applications include power supplies, UPS systems, and battery management systems. - Electrical characteristics include breakdown voltage, threshold voltage, switching times, and capacitances. Thermal characteristics provide junction-to-case and junction-to-ambient thermal resistances. - Graphs show typical operating characteristics like drain current versus drain-source voltage and drain-source resistance versus gate-source voltage. - Package dimensions are provided

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    470 views6 pages

    Datasheet Mosfet Ha210n06

    Uploaded by

    Matheus Locatelli
    This document provides specifications for a 60V 210A N-channel MOSFET. Some key details: - It has a maximum drain-source voltage of 60V, on-resistance of 4mΩ, and can handle continuous drain current of 210A. - Applications include power supplies, UPS systems, and battery management systems. - Electrical characteristics include breakdown voltage, threshold voltage, switching times, and capacitances. Thermal characteristics provide junction-to-case and junction-to-ambient thermal resistances. - Graphs show typical operating characteristics like drain current versus drain-source voltage and drain-source resistance versus gate-source voltage. - Package dimensions are provided

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

    210A 60V N-Channel MOSFET

    HA210N06

     FEATURES BVDSS = 60 V
    RDS(on) typ = 4mΩ
     60V/210A
    RDS(ON)= 4mΩ (Max)@ VGS=10V ID = 210 A

    TO-3P
     Lead free and Green Device Available
     Low Rds-on to Minimize Conductive Loss
    1

     High avalanche Current 2


    3

    1.Gate 2. Drain 3. Source

     Application
     Power Supply
     UPS
     Battery Management System

    Absolute Maximum Ratings (TA=25°C unless otherwise noted)


    Symbol Parameter Maximum Unit
    VDSS Drain-to-Source Voltage 60 V
    VGSS Gate-to-Source Voltage ±25 V
    TC=25°C 210
    ID3 Continuous Drain Current
    TC=100°C 130
    A
    IDP4 Pulsed Drain Current TC=25°C
    IAS5 Avalanche Current 40
    EAS5 Avalanche energy 800 mJ
    TC=25°C 220
    PD Maximum Power Dissipation W
    TC=100°C 110
    TJ, TSTG Junction & Storage Temperature Range -55~175 °C

    Thermal Characteristics
    Symbol Parameter Typical Unit
    Rθjc Thermal Resistance-Junction to Case 0.68
    ℃/W
    Rθja Thermal Resistance-Junction to Ambient 62.5

    Rev. 0.9 – March, 2012 1


    210A 60V N-Channel MOSFET
    HA210N06
    Electrical Characteristics (TA=25°C unless otherwise noted)
    Symbol Parameter Test Conditions Min. Typ Max. Unit
    Static Characteristics
    BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA 60 — — V
    VDS=48V,VGS=0V — — 1
    IDSS Zero Gate Voltage Drain Current uA
    TJ=125°C — — 20
    VGS(th) Gate Threshold Voltage VDS=VGS,ID=250uA 2 3 4 V
    IGSS Gate Leakage Current VGS=±25V, VDS=0V — — ±100 nA
    VGS=10V, ID=75A — 3.2 4
    RDS(on)1 Drain-Source On-Resistance mΩ
    — — —
    Diode Characteristics
    VSD1 Diode Forward Voltage ISD=75A,VGS=0V — 0.8 1.3 V
    IS3 Diode Continuous Forward Current — — 50 A
    trr Reverse Recovery Time IF=75A,VDD=60V — 48 — nS
    Qrr Reverse Recovery Charge dI/dt=100A/us — 72 — nC
    Dynamic Characteristics2
    VGS=0V, VDS=0V,
    RG Gate Resistance — 2 — Ω
    Frequency=1MHz
    Ciss Input Capacitance — 5800 —
    VGS=0V, VDS=25V
    Coss Output Capacitance — 1020 — pF
    Frequency=1MHz
    Crss Reverse Transfer Capacitance — 505 —
    td(on) Turn-On Delay Time — 29 —
    tr Rise Time VDD=30V,ID=75A, — 19 —
    nS
    td(off) Turn-Off Delay Time VGS=10V,RG=25Ω — 42 —
    tf Fall Time — 53 —
    Gate Charge Characteristics2
    Qg Total Gate Charge — 135 —
    VDS=48V,VGS=10V
    Qgs Gate-to-Source Charge — 23 — nC
    ID=75A
    Qgd Gate-to-Drain Charge — 48 —
    Note: 1: Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%.
    2: Guaranteed by design, not subject to production testing.
    3: Package limitation current is 50A.Calculated continuous current based on maximum allowable junction temperature.
    4: Repetitive rating, pulse width limited by max junction temperature.
    5: Starting TJ = 25°C,L = 0.5mH,IAS = 82A.

    Rev. 0.9 – March, 2012 2


    210A 60V N-Channel MOSFET
    HA210N06

    Ty
    ypical O
    Operatin
    ng Charracteristics

    Rev.
    R 0.9 – Ma
    arch, 2012 3
    210A 60V N-Channel MOSFET
    HA210N06

    Ty
    ypical O
    Operatin
    ng Charracteristics

    Rev.
    R 0.9 – Ma
    arch, 2012 4
    210A 60V N-Channel MOSFET
    HA210N06

    Ty
    ypical O
    Operatin
    ng Charracteristics

    Rev.
    R 0.9 – Ma
    arch, 2012 5
    Package Dimension

    TO-3P

    15.6±0.20 4.8±0.20
    13.6±0.20
    .20
    9.6±0.20 ±0 1.5±0.20
    .2
    φ3
    19.9±0.20

    18.7±0.20
    14.9±0.20
    13.9±0.20

    1.4±0.20
    3±0.20
    3.5±0.20

    2±0.20
    16.5±0.20

    1±0.20

    5.45typ 0.6±0.20

    5.45typ

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