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VTU Engineering Physics Practical (Lab) - 3.Transistor-Characteristics

This document describes an experiment to determine the input and output characteristics of an NPN transistor in common emitter configuration. The input characteristics are obtained by varying the base-emitter voltage and measuring the corresponding base current. The output characteristics are obtained by varying the collector-emitter voltage and measuring the collector current. From the input and output curves, the input resistance, output resistance, and current gain of the transistor are calculated.

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Gaurav Sharma
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275 views4 pages

VTU Engineering Physics Practical (Lab) - 3.Transistor-Characteristics

This document describes an experiment to determine the input and output characteristics of an NPN transistor in common emitter configuration. The input characteristics are obtained by varying the base-emitter voltage and measuring the corresponding base current. The output characteristics are obtained by varying the collector-emitter voltage and measuring the collector current. From the input and output curves, the input resistance, output resistance, and current gain of the transistor are calculated.

Uploaded by

Gaurav Sharma
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© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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VTU Engineering Physics Practical(Lab)


Wednesday, August 13, 2008

3.Transistor-Characteristics
AIM: To draw the input and output characteristics of given N-P-N transistor in the
Common Emitter configuration and hence to determine the input resistance, output
resistance and current gain b.
APPARATUS: N-P-N transistor, Variable DC power supplies, Digital voltmeter, DC
Microammeter, DC Milliammeter, 100 KW Resistor and 100W Resistor.
PRINCIPLE: Transistor is a three terminal, two junction semiconductor device. The
three terminals are Emitter, Base and Collector. In an N-P-N transistor, a P-type
semiconductor is sandwiched between two N-type materials. Here Emitter is heavily
doped, the Base is lightly doped and the Collector is intermediately doped. Common
Emitter configuration is most effective because of its high current gain, high voltage
and power gain. In Common Emitter configuration, Emitter terminal is made
common to both input and output circuits. Input junction (Base-Emitter) is forward
biased and output junction (Collector-Emitter) is reverse biased so that the input
junction is having low resistance (since it is forward biased) and output junction high
resistance (since it is reverse biased).
Input characteristics of a transistor is a curve showing the variation of input (Base)
current IB as a function of input (Base-Emitter) voltage VBE, when the output
(Collector-Emitter) voltage VCE is kept constant.
Input resistance Ri = (DVBE/ DIB)
Output characteristics of a transistor is a curve showing variations of output current
IC as a function of output voltage VCE, when the input current IB is kept constant.
Output resistance Ro = DVCE/DIC
Current gain b = DIC/DIB
PROCEDURE: The circuit connections are made as shown in figure.
(a) Input characteristics: Power supply VCC is switched on and VCE is adjusted to a
desired value by varying VCC. Base-Emitter voltage (VBE) is varied and
corresponding base current (IB) is noted down. The readings are plotted with VBE
along X-axis and IB along Y-axis. Slope of the graph will input resistance.
(b) Output characteristics: By varying VBB, IB is adjusted to a desired value. Now VCE
is is varied and corresponding value of IC is noted down. The readings are plotted
with VCE along X-axis and IC along Y-axis. Another set of observation is taken for
different IB value and the graph is plotted. Slope of the graph will give output
resistance.
(c) Current gain: Keeping VCE constant, collector current IC is noted for different
values of base current IB. The experiment is repeated for various constant values of
VCE and readings are tabulated. A graph is drawn with IB along X-axis and IC along
Y-axis. Slope of the graph will give current gain b.
OBERVATIONS:
(a) Input characteristics:
VCE =
VBE IB

(b) Output characteristics:


IB IB IB
VCE IC VCE IC VCE IC

(c) Current gain:


VCE VCE VCE
IB IC IB IC IBIC

CALCULATIONS:
(1) Slope of the DVBE - DIB graph (Input resistance Ri) = DVBE/ DIB =
(2) Slope of the DVCE - DIC graph (Output resistance Ro) = DVCE/ DIC =
(3) Slope of the DIB - DIC graph (Current gain b) = DIB/ DIC =
RESULTS:
(1) The input and output characteristics are drawn.
(2) Input resistance Ri =
(3) Output resistance Ro =
(4) Current gain b =

RAMACHANDRA KAMATH at 7:24 AM

1 comment:

Atico Export April 28, 2015 at 10:29 PM


i was looking for blogs related of Physics Lab Supplies . then i found this blog, this is really nice
and interested to read. thanks to author for sharing this type of information.
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