LABORATORY ACTIVITY #2

TYPES OF
DIODE
technical research
 DIODE

The diode is a electronic device which consists of only two electrodes i.e. anode and cathode.

A Diode is a two terminal device which allows current to flow in only one direction e.g.

forward direction. In this mode anode has higher potential than cathode. This state of diode is

known as forward biased state

TYPES OF DIODE
P-N JUNCTION DIODE
CHARACTERISTICS
A p-n junction diode is two-terminal or two-electrode semiconductor device, which allows the

electric current in only one direction while blocks the electric current in opposite or reverse

direction.

The p-n junction diode is made from the semiconductor materials such as silicon, germanium,
and gallium arsenide. The p-n junction diodes made from silicon semiconductors works at

higher temperature when compared with the p-n junction diodes made from germanium

semiconductors.

MATERIAL STRUCTURE
USES/ APPLICATION

Application: p-n junction diodes are used as rectifiers. This diode converts AC to DC in power

supply modules. In this diode type, silicon is preferred over germanium due to its lower reverse

current and higher breakdown voltage.

ZENER DIODE
USES/ APPLICATION
When reverse biase voltage is increased to ordinary junction diodes until depletion region breaks

down, the diode suffers permanent damage. Zener diode is used in the breakdown region so long

as resistor limits the current.

Application: It functions as rectifier diode. Zener diodes are used for voltage regulation, as

reference elements, surge suppressors, and in switching applications and clipper circuits

MATERIAL STRUCTURE
The Zener diode is employed in reverse biasing. The reverse biasing means the n-type material of

the diode is connected to the positive terminal of the supply and the P-type material is connected

to the negative terminal of the supply. The depletion region of the diode is very thin because it is

made of the heavily doped semiconductor material.

The characteristics of a Zener diode can be divided into two parts as follows:

(i) Forward Characteristics (ii) Reverse Characteristics

Forward Characteristics of Zener Diode

graph, we understand that it is almost identical to the forward characteristics of any other P-N

junction diode.

Reverse Characteristics of Zener Diode

flows across the diode. This current is due to thermally generated minority carriers. As the reverse

voltage is increased, at a certain value of reverse voltage, the reverse current increases drastically

and sharply.

POINT-CONTACT DIODE
USES/ APPLICATION
Application:

They are used as signal diodes in order to detect radio frequency signals due to their very low

capacitance. In reverse biased mode, depletion layer acts as insulator between the two plates and

it functions as capacitor. It is suitable for high frequency signal detection due to its tiny junction

area. Germanium is used for signal diodes due to its lower "turn-on" voltage compare to silicon.

It is used as a video detector in television receiver.

It is used in microwave frequency mixer circuits.

It is used in non linear i.e. rectifying elements of R.F. (radio frequency) signal detection.

It is used as an AM (amplitude modulation) detector in radio receiver.

It is used in frequency conversation circuits.

It is used in high frequency circuits of the order of 10 GHZ or more.

wire (Cat whisker). The semiconductor used in the construction of point contact diode can be

either silicon or germanium but Germanium is used extensively because it possesses higher carrier

mobility.

The dimension of the semiconductor substrate is about 1.25 mm square and its thickness is 0.5 mm

thick. One phase of the semiconductor substrate is soldered to the metal base by the technique of

radio frequency heating.

CHARACTERISTICS

The figure depicts structure of germanium point contact diode. As shown tip of gold or tungsten

wire is pressed on pellet of n-type germanium. During manufacturing, brief current is passed

through the diode which produces tiny p-type region in pellet around the tip. This process forms p-

n junction in very small area

USES/ APPLICATION
Application: The schottky diode among above types of diodes is widely used in different

applications such as mixer in RF applications, as rectifier in power applications. It is low voltage

diode.

Schottky diodes are used in electronics industry for many applications in diode rectifier because of

its properties. They are used for voltage clamping applications, to prevent transistor saturation. It is

used as Schottky TTL in digital devices as these devices require fast switching. as the performance

of digital computers is determined by switching speed of diodes, Schottky diode is an important

component for digital computers.

MATERIAL STRUCTURE

This barrier is called as potential energy barrier. Two types of Schottky barriers are Rectifying and

Non-rectifying type. When a metal and lightly doped semiconductor meets each other, the Schottky

barrier is formed. Sequentially when a metal encounters the heavily doped semiconductor, it forms

a non-rectifying barrier. The width of depletion layer rises when the semiconductor doping

increases. At the same time, when width decreases charge carriers travels through tunnel and

reaches the depletion layer. When doping level increases, the junction does not act as rectifier and

it becomes ohmic contact.

The forward voltage drop of Schottky diode is very low when compared to the P-N junction diode.

The forward voltage drop ranges from 0.3 volts to 0.5 volts. The barrier of forward voltage drop is

made of silicon. The forward voltage drop is proportional to the doping concentration of N type

semiconductor. Due to high concentration of current carriers, the V-I characteristic of Schottky

diode is steeper.

LIGHT EMITTING DIODE (LED)

USES/ APPLICATION
LEDs (Light Emitting Diodes) are the latest development in the lighting industry. Made popular by

their efficiency, range of color, and long lifespan, LED lights are ideal for numerous applications

including night lighting, art lighting, and outdoor lighting.

LED is used as a bulb in the homes and industries

The light-emitting diodes are used in motorcycles and cars

These are used in mobile phones to display the message

At the traffic light signals led’s are used

light. The basic structure is a combination of p-type and n-type semiconductors with different

electrical conduction types, and it belongs to a device called a diode.

While ordinary diodes are mainly made of silicon or germanium, LEDs are made of compound

semiconductors such as GaAs, GaP, AlGaInP, and InGaN. Compound semiconductors have an

electron energy state inside a solid depending on the constituent materials. When the energy of

electrons is converted into light energy inside this, the wavelength of light has the property of

being inversely proportional to the electron energy. LEDs made of compound semiconductors can

emit light with wavelengths from infrared to visible and ultraviolet, depending on the constituent

materials.

CHARACTERISTICS

There are different types of light-emitting diodes are available in the market and there are

different LED characteristics which include the color light, or wavelength radiation, light intensity.

The important characteristic of the LED is color. In the starting use of LED, there is the only red

color. As the use of LED is increased with the help of the semiconductor process and doing the

research on the new metals for LED, the different colors were formed.
 PHOTODIODE
USES/ APPLICATION

Application: They are very useful for various applications such as fire alarms, counting systems and

automatic control systems. Photodiodes are used as fast counters and used in light meters to

measure the light energy.

The applications of photodiodes involve similar applications of photodetectors like charge-

coupled devices, photoconductors, and photomultiplier tubes.

These diodes are used in consumer electronics devices like smoke detectors, compact disc

players, and televisions and remote controls in VCRs.

In other consumer devices like clock radios, camera light meters, and street lights,

photoconductors are more frequently used rather than photodiodes.

Photodiodes are frequently used for exact measurement of the intensity of light in science &

industry. Generally, they have an enhanced, more linear response than photoconductors.

Photodiodes are also widely used in numerous medical applications like instruments to analyze

samples, detectors for computed tomography, and also used in blood gas monitors.

These diodes are much faster & more complex than normal PN junction diodes and hence are

frequently used for lighting regulation and in optical communications.

MATERIAL STRUCTURE

The photodiode construction can be done using two semiconductors like P-type & N-type. In this

design, the formation of P-type material can be done from the diffusion of the P-type substrate

which is lightly doped. So, the P+ ions layer can be formed because of the diffusion method. On the

substrate of N-type, the N-type epitaxial layer can be grown.

Photodiode Construction

The development of a P+ diffusion layer can be done over the heavily doped N-type epitaxial layer.

The contacts are designed with metals to make two terminals like anode and cathode. The front

region of the diode can be separated into two types like active & non-active surfaces.

The designing of the non-active surface can be done with silicon dioxide (SiO2)
 CHARACTERISTICS
A photodiode continually operates in a reverse bias mode. The characteristics of the photodiode

are shown clearly in the following figure, that the photocurrent is nearly independent of reverse

bias voltage which is applied. For zero luminance, the photocurrent is almost zero excluding for

small dark current. It is of the order of nano amperes. As optical power rises the photocurrent also

rises linearly. The max photocurrent is incomplete by the power dissipation of the photodiode.

TUNNEL DIODE
USES/ APPLICATION
Applications of Tunnel Diode

Tunnel diode can be used as a switch, amplifier, and oscillator.

Since it shows a fast response, it is used as high frequency component.

Tunnel diode acts as logic memory storage device.

They are used in oscillator circuits, and in FM receivers. Since it is a low current device, it is not

used more.
 MATERIAL STRUCTURE
The p-type and n-type semiconductor is heavily doped in a tunnel diode due to a greater number

of impurities. Heavy doping results in a narrow depletion region. When compared to a normal p-n

junction diode, tunnel diode has a narrow depletion width. Therefore, when small amount of

voltage is applied, it produces enough electric current in the tunnel diode.

CHARACTERISTICS

• It is heavily doped p-n junction diode. Impurity concentration is 1 part in 103 compare to 1 part in

108 in p-n junction diode.

• They are fabricated from germanium, GaAs (Gallium Arsenide) and gallium Antimonide.

• It is also known as Esaki diode.

• Width of depletion layer is very small (about 100A).

Due to forward biasing, because of heavy doping conduction happens in the diode. The maximum

current that a diode reaches is Ip and voltage applied is Vp. The current value decreases, when

more amount of voltage is applied. Current keeps decreasing until it reaches a minimal value.