OPT101

SBBS002A – JANUARY 1994 – REVISED OCTOBER 2003

MONOLITHIC PHOTODIODE AND

SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER

FEATURES DESCRIPTION
● SINGLE SUPPLY: +2.7 to +36V The OPT101 is a monolithic photodiode with on-chip
transimpedance amplifier. Output voltage increases linearly
● PHOTODIODE SIZE: 0.090 x 0.090 inch
with light intensity. The amplifier is designed for single or
● INTERNAL 1MΩ FEEDBACK RESISTOR dual power-supply operation, making it ideal for battery-
● HIGH RESPONSIVITY: 0.45A/W (650nm) operated equipment.
● BANDWIDTH: 14kHz at RF = 1MΩ The integrated combination of photodiode and
● LOW QUIESCENT CURRENT: 120µA transimpedance amplifier on a single chip eliminates the
problems commonly encountered in discrete designs such as
● AVAILABLE IN 8-PIN DIP AND 8-LEAD
leakage current errors, noise pick-up, and gain peaking due
SURFACE-MOUNT PACKAGES
to stray capacitance. The 0.09 x 0.09 inch photodiode is
operated in the photoconductive mode for excellent linearity
APPLICATIONS and low dark current.
● MEDICAL INSTRUMENTATION The OPT101 operates from +2.7V to +36V supplies and
quiescent current is only 120µA. It is available in clear
● LABORATORY INSTRUMENTATION
plastic 8-pin DIP, and J-formed DIP for surface mounting.
● POSITION AND PROXIMITY SENSORS Temperature range is 0°C to +70°C.
● PHOTOGRAPHIC ANALYZERS
● BARCODE SCANNERS
● SMOKE DETECTORS
● CURRENCY CHANGERS

V+

2 1 SPECTRAL RESPONSIVITY
0.7 0.7
Yellow
Green
Blue

Red

3pF Ultraviolet Infrared

Photodiode Responsivity (A/W)

0.6 0.6
Voltage Output (V/µW)

1MΩ
4 0.5 0.5
Using Internal
8pF 0.4 1MΩ Resistor 0.4

0.3 0.3
5
7.5mV 0.2 0.2

λ VB
0.1 0.1

OPT101 0 0
200 300 400 500 600 700 800 900 1000 1100
8 3 Wavelength (nm)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Copyright © 1994-2003, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

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SPECIFICATIONS
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.

OPT101P
PARAMETER CONDITIONS MIN TYP MAX UNITS
RESPONSIVITY
Photodiode Current 650nm 0.45 A/W
Voltage Output 650nm 0.45 V/µW
vs Temperature 100 ppm/°C
Unit to Unit Variation 650nm ±5 %
Nonlinearity(1) FS Output = 24V ±0.01 % of FS
Photodiode Area (0.090 x 0.090in) 0.008 in2
(2.29 x 2.29mm) 5.2 mm2

DARK ERRORS, RTO(2)

Offset Voltage, Output +5 +7.5 +10 mV
vs Temperature ±10 µV/°C
vs Power Supply VS = +2.7V to +36V 10 100 µV/V
Voltage Noise, Dark, fB = 0.1Hz to 20kHz VS = +15V, VPIN3 = –15V 300 µVrms

TRANSIMPEDANCE GAIN
Resistor 1 MΩ
Tolerance, P ±0.5 ±2 %
W ±0.5 %
vs Temperature ±50 ppm/°C

FREQUENCY RESPONSE
Bandwidth VOUT = 10Vp-p 14 kHz
Rise Fall Time, 10% to 90% VOUT = 10V Step 28 µs
Settling Time, 0.05% VOUT = 10V Step 160 µs
0.1% 80 µs
1% 70 µs
Overload Recovery 100%, Return to Linear Operation 50 µs

OUTPUT
Voltage Output, High (VS) – 1.3 (VS) – 1.15 V
Capacitive Load, Stable Operation 10 nF
Short-Circuit Current VS = 36V 15 mA

POWER SUPPLY
Operating Voltage Range +2.7 +36 V
Quiescent Current Dark, VPIN3 = 0V 120 240 µA
RL = ∞, VOUT = 10V 220 µA
TEMPERATURE RANGE
Specification 0 +70 °C
Operating 0 +70 °C
Storage –25 +85 °C
Thermal Resistance, θJA 100 °C/W

NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.

PHOTODIODE SPECIFICATIONS
TA = +25°C, VS = +2.7V to +36V unless otherwise noted.

Photodiode of OPT101P
PARAMETER CONDITIONS MIN TYP MAX UNITS
Photodiode Area (0.090 x 0.090in) 0.008 in2
(2.29 x 2.29mm) 5.2 mm2
Current Responsivity 650nm 0.45 A/W
650nm 865 µA/W/cm2
Dark Current VDIODE = 7.5mV 2.5 pA
vs Temperature Doubles every 7°C
Capacitance 1200 pF

2
OPT101
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OP AMP SPECIFICATIONS
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.

OPT101 Op Amp(1)
PARAMETER CONDITIONS MIN TYP MAX UNITS
INPUT
Offset Voltage ±0.5 mV
vs Temperature ±2.5 µV/°C
vs Power Supply 10 µV/V
Input Bias Current (–) Input 165 pA
vs Temperature (–) Input Doubles every 10°C
Input Impedance
Differential 400 || 5 MΩ || pF
Common-Mode 250 || 35 GΩ || pF
Common-Mode Input Voltage Range Linear Operation 0 to [(VS) – 1] V
Common-Mode Rejection 90 dB
OPEN-LOOP GAIN
Open-loop Voltage Gain 90 dB
FREQUENCY RESPONSE
Gain-Bandwidth Product(2) 2 MHz
Slew Rate 1 V/µs
Settling Time 1% 5.8 µs
0.1% 7.7 µs
0.05% 8.0 µs
OUTPUT
Voltage Output, High (VS) – 1.3 (VS) – 1.15 V
Short-Circuit Current VS = +36V 15 mA
POWER SUPPLY
Operating Voltage Range +2.7 +36 V
Quiescent Current Dark, VPIN3 = 0V 120 240 µA
RL = ∞, VOUT = 10V 220 µA

NOTES: (1) Op amp specifications provided for information and comparison only. (2) Stable gains ≥ 10V/V.

OPT101 3
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PACKAGE/ORDERING INFORMATION(1)
SPECIFIED
PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
OPT101P DIP-8 NTC –25°C to +85°C OPT101 OPT101P Rail, 50
OPT101P-J DIP-8, Surface Mount(2) DTL –25°C to +85°C OPT101 OPT101P-J Rail, 50

NOTES: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet. (2) 8-pin DIP with J-formed
leads for surface mounting.

PIN CONFIGURATIONS ELECTROSTATIC

Top View DIP
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be handled
VS 1 8 Common with appropriate precautions. Failure to observe proper han-
dling and installation procedures can cause damage.
–In 2 7 NC
(1)
ESD damage can range from subtle performance degradation
–V 3 6 NC
to complete device failure. Precision integrated circuits may
1MΩ Feedback 4 5 Output be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
NOTE: (1) Photodiode location. specifications.

MOISTURE SENSITIVITY
AND SOLDERING
Clear plastic does not contain the structural-enhancing fillers
ABSOLUTE MAXIMUM RATINGS(1) used in black plastic molding compound. As a result, clear
Supply Voltage (VS to “Common” or pin 3) ................................ 0 to +36V plastic is more sensitive to environmental stress than black
Output Short-Circuit (to ground) ............................................... Continuous
plastic. This can cause difficulties if devices have been stored
Operating Temperature .................................................... –25°C to +85°C
Storage Temperature ........................................................ –25°C to +85°C in high humidity prior to soldering. The rapid heating during
Junction Temperature ...................................................................... +85°C soldering can stress wire bonds and cause failures. Prior to
Lead Temperature (soldering, 10s) ............................................... +300°C soldering, it is recommended that plastic devices be baked-out
(Vapor-Phase Soldering Not Recommended)
at +85°C for 24 hours.
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade The fire-retardant fillers used in black plastic are not compat-
device reliability. These are stress ratings only, and functional operation of the ible with clear molding compound. The OPT101 plastic
device at these or any other conditions beyond those specified is not implied.
packages cannot meet flammability test, UL-94.

4
OPT101
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 TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.

NORMALIZED SPECTRAL RESPONSIVITY VOLTAGE RESPONSIVITY vs RADIANT POWER

1.0 10
Normalized Current or Voltage Output

Yellow
Green
Blue

Red
Ultraviolet Infrared
0.9
70°C
0.8 Ω
1 M
25°C 10

Output Voltage (V)

0.7 =
0.6 650nm
RF Ω
1M
(0.45A/W) =
0.5 0.1 RF Ω
0k
0.4 10
=
RF kΩ λ = 650nm
0.3 50
0.01 =
0.2 RF
0.1
0 0.001
200 300 400 500 600 700 800 900 1000 1100 0.01 0.1 1 10 100 1k
Wavelength (nm)
Radiant Power (µW)

VOLTAGE RESPONSIVITY vs IRRADIANCE VOLTAGE RESPONSIVITY vs FREQUENCY

10 10

RF = 10MΩ

1 Ω Responsivity (V/µW)
1
Output Voltage (V)

M
10
=
RF Ω RF = 1MΩ
0.1 1M 0.1
=
RF Ω RF = 100kΩ, CEXT = 33pF
0k
10
=
0.01
RF kΩ RF = 50kΩ, CEXT = 56pF
50 0.01
= λ = 650nm
RF

0.001 0.001
0.001 0.01 0.1 1 10 100 100 1k 10k 100k
Frequency (Hz)
Irradiance (W/m2)

RESPONSE vs INCIDENT ANGLE DARK VOUT vs TEMPERATURE

8
1.0 1.0

θX 7.8
0.8 0.8
Output Voltage (mV)

θY
Relative Response

7.6
0.6 0.6

7.4
0.4 θX Plastic θY 0.4
DIP Package

7.2
0.2 0.2

7
0 0
0 10 20 30 40 50 60 70
0 ±20 ±40 ±60 ±80
Temperature (°C)
Incident Angle (°)

OPT101 5
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TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.

QUIESCENT CURRENT vs TEMPERATURE QUIESCENT CURRENT vs (VOUT – VPIN3)

300 300
275 VS = 36V VS = 15V
250
250 VS = 15V, VOUT – VPIN3 = 15V

Quiescent Current (µA)

Quiescent Current (µA)

225
200
200 VS = 2.7V
VS = 5V, VOUT – VPIN3 = 5V
175 150
150
VS = +15V, VOUT – VPIN3 = 0V 100
125
100
50
75 VS = +5V, VOUT – VPIN3 = 0V
50 0
0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40
Temperature (°C) VOUT – VPIN3 (V)

SHORT CIRCUIT CURRENT vs VS (IBIAS-IDARK) vs TEMPERATURE

20 180
18 160
16 140
Short Circuit Current (mA)

IFEEDBACK 3pF
14 120 (IBIAS-IDARK)
1MΩ
IBIAS-IDARK (pA)

100
12 8pF
80 IBIAS
10
60
8
40 λ IDARK
6
20 VB
4 0 OPT101
2 –20
0 –40
0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70
VS (V) Temperature (°C)

OUTPUT NOISE VOLTAGE vs NOISE EFFECTIVE POWER vs

MEASUREMENT BANDWIDTH, VS = +15, VOUT – VPIN3 = 15V MEASUREMENT BANDWIDTH, VS = +15, VOUT – VPIN3 = 0
1000 10–7
RF = 10MΩ
RF = 1MΩINTERNAL
Noise Effective Power (W)

10–8 RF = 100k || 33pF

Noise Voltage (µVrms)

100 RF = 100kΩ || 33pF

10–9 RF = 50k || 56pF

10 RF = 50kΩ || 56pF
RF = 1MΩ INTERNAL
10–10

1 RF = 10MΩ
10–11

0.1 10–12
10 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M
Frequency (Hz) Bandwidth (Hz)

6
OPT101
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TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.

SMALL SIGNAL RESPONSE LARGE SIGNAL RESPONSE

SMALL SIGNAL RESPONSE (CLOAD = 10,000 pF) SMALL SIGNAL RESPONSE (CLOAD = 10,000 pF)
(Pin 3 = 0V) (Pin 3 = –15V)

OPT101 7
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APPLICATIONS INFORMATION source to sink currents up to approximately 100µA. The
benefits of this current sink are shown in the typical
Figure 1 shows the basic connections required to operate the performance curves “Small Signal Response (CLOAD =
OPT101. Applications with high-impedance power supplies 10,000pF)” which compare operation with pin 3 grounded
may require decoupling capacitors located close to the and connected to –15V.
device pins as shown. Output is 7.5mV dc with no light and
Due to the architecture of this output stage current sink, there
increases with increasing illumination.
is a slight increase in operating current when there is a voltage
Photodiode current, ID, is proportional to the radiant power, or between pin 3 and the output. Depending on the magnitude of
flux, (in watts) falling on the photodiode. At a wavelength of this voltage, the quiescent current will increase by
650nm (visible red) the photodiode Responsivity, RI, is approximately 100µA as shown in the typical performance
approximately 0.45A/W. Responsivity at other wavelengths is curve "Quiescent Current vs (VOUT – VPIN3)".
shown in the typical performance curve “Responsivity vs
Wavelength.”
VS
0.01 to 0.1µF

VS = +2.7 to +36V
2 1
0.01 to 0.1µF
3pF
2 1 4
3pF 1MΩ
4
1MΩ 8pF

8pF
5

5
λ VB
Dark output ≈ 7.5mV
λ VB Positive going output OPT101
with increased light 8 3 0.01 to 0.1µF
OPT101
8 3 Common
–V = –1V to (VS – 36V)
Common

FIGURE 1. Basic Circuit Connections. FIGURE 2. Bipolar Power Supply Circuit Connections.

The typical performance curve “Output Voltage vs Radiant NOISE PERFORMANCE

Power” shows the response throughout a wide range of Noise performance of the OPT101 is determined by the op
radiant power. The response curve “Output Voltage vs amp characteristics, feedback components and photodiode
Irradiance” is based on the photodiode area of 5.2mm2. capacitance. The typical performance curve “Output Noise
The OPT101’s voltage output is the product of the photodiode Voltage vs Measurement Bandwidth” shows how the noise
current times the feedback resistor, (IDRF), plus a pedestal varies with RF and measured bandwidth (0.1Hz to the
voltage, VB, of approximately 7.5mV introduced for single indicated frequency), when the output voltage minus the
supply operation. The internal feedback resistor is laser trimmed voltage on pin 3 is greater than approximately 50mV. Below
to 1MΩ. Using this resistor, the output voltage responsivity, RV, this level, the output stage is powered down, and the effective
is approximately 0.45V/µW at 650nm wavelength. Figure 1 bandwidth is decreased. This reduces the noise to
shows the basic circuit connections for the OPT101 operating approximately 1/3 the nominal noise value of 300µVrms, or
with a single power supply and using the internal 1MΩ feedback 100µVrms. This enables a low level signal to be resolved.
resistor for a response of 0.45V/µW at 650nm. Pin 3 is Noise can be reduced by filtering the output with a cutoff
connected to common in this configuration. frequency equal to the signal bandwidth. This will improve
signal-to-noise ratio. Also, output noise increases in proportion
CAPACITIVE LOADING to the square root of the feedback resistance, while responsivity
The OPT101 is capable of driving load capacitances of 10nF increases linearly with feedback resistance. Best signal-to-noise
without instability. However, dynamic performance with ratio is achieved with large feedback resistance. This comes
capacitive loads can be improved by applying a negative with the trade-off of decreased bandwidth.
bias voltage to Pin 3 (shown in Figure 2). This negative The noise performance of the photodetector is sometimes
power supply voltage allows the output to go negative in characterized by Noise Effective Power (NEP). This is the
response to the reactive effect of a capacitive load. An radiant power that would produce an output signal equal to the
internal JFET connected between pin 5 (output) and pin 3 noise level. NEP has the units of radiant power (watts), or
allows the output to sink current. This current sink capability Watts/√Hz to convey spectral information about the noise.
can also be useful when driving the capacitive inputs of The typical performance curve “Noise Effective Power” vs
some analog-to-digital converters which require the signal Measurement Bandwidth" illustrates the NEP for the OPT101.

8
OPT101
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DARK ERRORS This capacitor eliminates gain peaking and prevents
The dark errors in the specification table include all sources. instability. The value of CEXT can be determined from the
The dominant source of dark output voltage is the “pedestal” table in Figure 4. Values of RF, other than shown in the table,
voltage applied to the non-inverting input of the op amp. can be interpolated.
This voltage is introduced to provide linear operation in the
absence of light falling on the photodiode. Photodiode dark VS
current is approximately 2.5pA and contributes virtually no
2 1
offset error at room temperature. The bias current of the op
3pF
amp's summing junction (– input) is approximately 165pA.
4
The dark current will be subtracted from the amplifier's bias 1MΩ
current, and this residual current will flow through the REXT CEXT
8pF
feedback resistor creating an offset. The effects of temperature
on this difference current can be seen in the typical
performance curve “(IBIAS – IDARK) vs Temperature.” The 5

dark output voltage can be trimmed to zero with the optional

circuit shown in Figure 3. A low impedance offset driver (op λ VB
amp) should be used to drive pin 8 because this node has
OPT101
signal-dependent currents.
8 3

VS (a)-Series REXT

2 1 REXT CEXT DC Gain Bandwidth

(MΩ) (pF) (x106V/A) (kHz)
3pF
4 1 50 2 8
1MΩ 2 25 3 6
5 10 6 2.5
8pF 10 5 11 1.3
50 — 51 0.33

5
VO
CEXT

λ
Adjust R1
VB for VO = 0V
REXT
with no light.
OPT101
8 3
VS
Common –V
2 1
3pF
+15V 4
1MΩ

R1
8pF
500kΩ
OPA177

1/2 REF200 5
100µA

–15V –15V
λ VB
OPT101
FIGURE 3. Dark Error (Offset) Adjustment Circuit. 8 3

CHANGING RESPONSIVITY (b)-External Feedback

An external resistor, REXT, can be connected to set a different REXT CEXT DC Gain Bandwidth
voltage responsivity. To increase the responsivity, this resistor (MΩ) (pF) (x106V/A) (kHz)
can be placed in series with the internal 1MΩ (Figure 4a), or 0.05(1) 56 0.05 58
the external resistor can replace the internal resistor by not 0.1(1) 33 0.1 44
connecting pin 4 (Figure 4b). The second configuration also 1 — 1 23
2 — 2 9.4
allows the circuit gain to be reduced below 106V/A by using 5 — 5 3.6
external resistors of less than 1MΩ. 10 — 10 1.8
50 — 50 0.34
Figure 4 includes tables showing the responsivity and
Note: (1) May require 1kΩ in series with pin 5 when driving
bandwidth. For values of RF less than 1MΩ, an external large capacitances.
capacitor, CEXT should be connected in parallel with RF.
FIGURE 4. Changing Responsivity with External Resistor.

OPT101 9
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Applications using a feedback resistor significantly larger than DYNAMIC RESPONSE
the internal 1MΩ resistor may require special consideration. Using the internal 1MΩ resistor, the dynamic response of
Input bias current of the op amp and dark current of the the photodiode/op amp combination can be modeled as a
photodiode increase significantly at higher temperatures. This simple R • C circuit with a –3dB cutoff frequency of
increase combined with the higher gain (RF > 1MΩ) can cause approximately 14kHz. The R and C values are 1MΩ and
the op amp output to be driven to ground at high temperatures. 11pF respectively. By using external resistors, with less than
Such applications may require a positive bias voltage applied to 3pF parasitic capacitance, the frequency response can be
pin 8 to ensure that the op amp output remains in the linear improved. An external 1MΩ resistor used in the configuration
operating region when the photodiode is not exposed to light. shown in Figure 4b will create a 23kHz bandwidth with the
Alternatively, a dual power supply can be used. The output may same 106V/A dc transimpedance gain. This yields a rise time
be negative when sensing dark conditions. of approximately 15µs (10% to 90%). Dynamic response is
not limited by op amp slew rate. This is demonstrated by the
LIGHT SOURCE POSITIONING dynamic response oscilloscope photographs showing virtually
The OPT101 is tested with a light source that uniformly identical large-signal and small-signal response.
illuminates the full area of the integrated circuit, including Dynamic response will vary with feedback resistor value as
the op amp. Although IC amplifiers are light-sensitive to shown in the typical performance curve “Responsivity vs
some degree, the OPT101 op amp circuitry is designed to Frequency.” Rise time (10% to 90%) will vary according to
minimize this effect. Sensitive junctions are shielded with the –3dB bandwidth produced by a given feedback resistor
metal, and the photodiode area is very large relative to the op value:
amp input circuitry. 0.35
tr =
If your light source is focused to a small area, be sure that it fC
is properly aimed to fall on the photodiode. A narrowly where:
focused beam falling on only the photodiode will provide tr is the rise time (10% to 90%)
improved settling times compared to a source that uniformly fC is the –3dB bandwidth
illuminates the full area of the die. If a narrowly focused light
source were to miss the photodiode area and fall only on the
LINEARITY PERFORMANCE
op amp circuitry, the OPT101 would not perform properly.
The large 0.09" x 0.09" (2.29mm x 2.29mm) photodiode area The photodiode is operated in the photoconductive mode so
allows easy positioning of narrowly focused light sources. the current output of the photodiode is very linear with
The photodiode area is easily visible, as it appears very dark radiant power throughout a wide range. Nonlinearity remains
compared to the surrounding active circuitry. below approximately 0.05% up to 100µA photodiode current.
The photodiode can produce output currents of 1mA or
The incident angle of the light source also effects the apparent greater with high radiant power, but nonlinearity increases
sensitivity in uniform irradiance. For small incident angles, the to several percent in this region.
loss in sensitivity is simply due to the smaller effective light
gathering area of the photodiode (proportional to the cosine of This very linear performance at high radiant power assumes
the angle). At a greater incident angle, light is diffracted and that the full photodiode area is uniformly illuminated. If the
scattered by the package. These effects are shown in the typical light source is focused to a small area of the photodiode,
performance curve “Responsivity vs Incident Angle.” nonlinearity will occur at lower radiant power.

2 1
0.01 to 3pF
0.1µF 4
1MΩ +2.7 to
+36V
8pF

5
VOUT

λ VB
OPT101
8 3

FIGURE 5. Three-Wire Remote Light Measurement.

10
OPT101
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 +15V
2 1
3pF

4
1MΩ

8pF
+15V

V01 2 Difference Output

7
5 1
6
λ
50kΩ
RG INA118 VOUT = (V02 – V01) 1+
VB RG
5
8
OPT101 3 4
8 3

–15V
+15V
2 1
3pF
+15V
4 Log of Ratio Measurement
1MΩ (Absorbance)
6
8pF 100kΩ
14

100kΩ LOG100 VOUT = K log10 (V02/V01)

5 7
V02 1

λ VB
9 1nF
3
OPT101
8 3 –15V

FIGURE 6. Differential Light Measurement.

+15V
2 1
3pF
3.3nF

1MΩ
4

+15V 8pF
+15V
10kΩ
2 2 7
270Ω
6
100kΩ OPA627 5
10V LED
REF102
6 3 4
IN4148 VB
4 –15V
OPT101
11kΩ 0.03µF
8 3

Glass Microscope Slide

Approximately
92% light
available for application.

LED ≈ 8%

OPT101

FIGURE 7. LED Output Regulation Circuit.

OPT101 11
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 PACKAGE OPTION ADDENDUM

www.ti.com 16-Apr-2009

PACKAGING INFORMATION

Orderable Device Status (1) Package Package Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Type Drawing Qty
OPT101P ACTIVE PDIP NTC 8 50 Green (RoHS & CU NIPDAU N / A for Pkg Type
no Sb/Br)
OPT101P-J ACTIVE SOP DTL 8 50 Green (RoHS & CU NIPDAU Level-4-250C-72 HR
no Sb/Br)
OPT101P-JG4 ACTIVE SOP DTL 8 50 Green (RoHS & CU NIPDAU Level-4-250C-72 HR
no Sb/Br)
OPT101PG4 ACTIVE PDIP NTC 8 50 Green (RoHS & CU NIPDAU N / A for Pkg Type
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.

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provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
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Addendum-Page 1
 MECHANICAL DATA

MPDI059 – APRIL 2001

NTC (R-PDIP-T8) PLASTIC DUAL-IN-LINE

D
0.390 (9,91)
0.360 (9,14) Photodiode L
Area
8 5

0.275 (6,99)
D
0.238 (6,05)

Index
Area 1 4 Polished
Surface

0.120 (3,05) E
0.100 (2,54) 0.325 (8,26)
5.5°–8.5° 0.135 (3,43) 0.300 (7,62)
0.120 (3,05) C
H 0.070 (1,78)
0.045 (1,14) 0.165 (4,19) MAX

Base Plane
–C–
Seating Plane

D 0.005 (0,13) MIN E

0.160 (4,06)
1/2 Lead C 0.300 (7,63)
4 PL 0.115 (2,92)
0.015 (0,38)
0.045 (1,143) 0.015 (0,38) MIN 0.060 (1,52)
H 0.008 (0,20)
0.030 (0,762) MAX
F
4 PL 0.100 (2,54) C 0.430 (10,92)
0.022 (0,56) MAX
F
0.014 (0,36)
0.010 (0,25) M C
4202487/A 03/01

NOTES: A. All linear dimensions are in inches (millimeters). I. Distance between leads including dambar protrusions
B. This drawing is subject to change without notice. to be 0.005 (0,13) minumum.
C. Dimensions are measured with the package J. A visual index feature must be located within the
seated in JEDEC seating plane gauge GS-3. cross–hatched area.
D. Dimensions do not include mold flash or protrusions. K. For automatic insertion, any raised irregularity on the
Mold flash or protrusions shall not exceed 0.010 (0,25). top surface (step, mesa, etc.) shall be symmetrical
E. Dimensions measured with the leads constrained to be about the lateral and longitudinal package centerlines.
perpendicular to Datum C. L. Center of photodiode must be within 0.010 (0,25) of
F. Dimensions are measured at the lead tips with the center of photodiode area
leads unconstrained.
G. Pointed or rounded lead tips are preferred to ease
insertion.
H. Maximum dimensions do not include dambar
protrusions. Dambar protrusions shall not exceed
0.010 (0,25).

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