ZTX652 NPN SILICON PLANAR ZTX652

ZTX653 MEDIUM POWER TRANSISTORS ZTX653

ISSUE 2 – JULY 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). FEATURES
* 100 Volt VCEO
ZTX652 ZTX653 * 2 Amp continuous current
PARAMETER SYMBOL UNIT CONDITIONS.
* Low saturation voltage
MIN. TYP. MAX. MIN. TYP. MAX.
* Ptot=1 Watt
C
B
Transition fT 140 175 140 175 MHz IC=100mA, VCE=5V E
Frequency f=100MHz
E-Line
Switching Times ton 80 80 ns IC=500mA, VCC=10V TO92 Compatible
IB1=IB2=50mA ABSOLUTE MAXIMUM RATINGS.
toff 1200 1200 ns
PARAMETER SYMBOL ZTX652 ZTX653 UNIT
Output Capacitance Cobo 30 30 pF VCB=10V f=1MHz Collector-Base Voltage VCBO 100 120 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Collector-Emitter Voltage VCEO 80 100 V
Emitter-Base Voltage VEBO 5 V
Peak Pulse Current ICM 6 A
Continuous Collector Current IC 2 A
THERMAL CHARACTERISTICS Power Dissipation at Tamb=25°C Ptot 1 W
derate above 25°C 5.7 mW/°C
PARAMETER SYMBOL MAX. UNIT
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
Thermal Resistance: Junction to Ambient1 Rth(j-amb)1 175 °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Junction to Ambient2 Rth(j-amb)2† 116 °C/W
Junction to Case Rth(j-case) 70 °C/W ZTX652 ZTX653
PARAMETER SYMBOL UNIT CONDITIONS.
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. MIN. TYP. MAX. MIN. TYP. MAX.

Collector-Base V(BR)CBO 100 120 V IC=100µA

Breakdown
2.5 200 Voltage
Max Power Dissipation - (Watts)

Collector-Emitter V(BR)CEO 80 100 V IC=10mA*

Thermal Resistance (°C/W)

D=1 (D.C.)

2.0 t1 D=t1/tP Breakdown

C
as Voltage
e tP
1.5 te
m Emitter-Base V(BR)EBO 5 5 V IE=100µA
pe
ra
100 D=0.5 Breakdown
1.0 Am
bie
tu
re Voltage
nt t
em
per D=0.2 Collector Cut-Off ICBO 0.1 µA VCB=80V
at u Current 0.1 VCB=100V
0.5 re D=0.1 µA
Single Pulse 10 µA VCB=80V,Tamb=100°C
0 0 10 µA VCB=100V,Tamb=100°C
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
T -Temperature (°C) Pulse Width (seconds) Emitter Cut-Off IEBO 0.1 0.1 µA VEB=4V
Current
Derating curve Maximum transient thermal impedance Collector-Emitter VCE(sat) 0.13 0.3 0.13 0.3 V IC=1A, IB=100mA*
Saturation Voltage 0.23 0.5 0.23 0.5 V IC=2A, IB=200mA*
Base-Emitter VBE(sat) 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA*
Saturation Voltage
Base-Emitter VBE(on) 0.8 1 0.8 1 V IC=1A, VCE=2V*
Turn-On Voltage

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 ZTX652 NPN SILICON PLANAR ZTX652
ZTX653 MEDIUM POWER TRANSISTORS ZTX653
ISSUE 2 – JULY 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). FEATURES
* 100 Volt VCEO
ZTX652 ZTX653 * 2 Amp continuous current
PARAMETER SYMBOL UNIT CONDITIONS.
* Low saturation voltage
MIN. TYP. MAX. MIN. TYP. MAX.
* Ptot=1 Watt
C
B
Transition fT 140 175 140 175 MHz IC=100mA, VCE=5V E
Frequency f=100MHz
E-Line
Switching Times ton 80 80 ns IC=500mA, VCC=10V TO92 Compatible
IB1=IB2=50mA ABSOLUTE MAXIMUM RATINGS.
toff 1200 1200 ns
PARAMETER SYMBOL ZTX652 ZTX653 UNIT
Output Capacitance Cobo 30 30 pF VCB=10V f=1MHz Collector-Base Voltage VCBO 100 120 V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Collector-Emitter Voltage VCEO 80 100 V
Emitter-Base Voltage VEBO 5 V
Peak Pulse Current ICM 6 A
Continuous Collector Current IC 2 A
THERMAL CHARACTERISTICS Power Dissipation at Tamb=25°C Ptot 1 W
derate above 25°C 5.7 mW/°C
PARAMETER SYMBOL MAX. UNIT
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
Thermal Resistance: Junction to Ambient1 Rth(j-amb)1 175 °C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
Junction to Ambient2 Rth(j-amb)2† 116 °C/W
Junction to Case Rth(j-case) 70 °C/W ZTX652 ZTX653
PARAMETER SYMBOL UNIT CONDITIONS.
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. MIN. TYP. MAX. MIN. TYP. MAX.

Collector-Base V(BR)CBO 100 120 V IC=100µA

Breakdown
2.5 200 Voltage
Max Power Dissipation - (Watts)

Collector-Emitter V(BR)CEO 80 100 V IC=10mA*

Thermal Resistance (°C/W)

D=1 (D.C.)

2.0 t1 D=t1/tP Breakdown

C
as Voltage
e tP
1.5 te
m Emitter-Base V(BR)EBO 5 5 V IE=100µA
pe
ra
100 D=0.5 Breakdown
1.0 Am
bie
tu
re Voltage
nt t
em
per D=0.2 Collector Cut-Off ICBO 0.1 µA VCB=80V
at u Current 0.1 VCB=100V
0.5 re D=0.1 µA
Single Pulse 10 µA VCB=80V,Tamb=100°C
0 0 10 µA VCB=100V,Tamb=100°C
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
T -Temperature (°C) Pulse Width (seconds) Emitter Cut-Off IEBO 0.1 0.1 µA VEB=4V
Current
Derating curve Maximum transient thermal impedance Collector-Emitter VCE(sat) 0.13 0.3 0.13 0.3 V IC=1A, IB=100mA*
Saturation Voltage 0.23 0.5 0.23 0.5 V IC=2A, IB=200mA*
Base-Emitter VBE(sat) 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA*
Saturation Voltage
Base-Emitter VBE(on) 0.8 1 0.8 1 V IC=1A, VCE=2V*
Turn-On Voltage

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 ZTX652
ZTX653
TYPICAL CHARACTERISTICS
0.6

0.5
225
0.4
VCE(sat) - (Volts)

IC/IB=10

hFE - Gain
175
0.3 VCE=2V

125
0.2

0.1 75

0
0.0001 0.001 0.01 0.1 1 10 25
0.01 0.1 1 10

IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC hFE v IC

1.4
1.2
VBE(sat) - (Volts)

1.2
1.0
VBE - (Volts)

1.0 VCE=2V
IC/IB=10
0.8
0.8
0.6
0.6
0.4
0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10

IC - Collector Current (Amps) IC - Collector Current (Amps)

VBE(sat) v IC VBE(on) v IC
Single Pulse Test at Tamb=25°C
10
td
tr IB1=IB2=IC/10
IC - Collector Current (Amps)

tf ts
ns ns
280 2800
1 240 2400
Switching time

200 2000
ts
D.C.
1s 160 1600
100ms
10ms 120 1200
tf
0.1 1.0ms
100µs 80 800
td
40 400 tr

ZTX652 0 0
ZTX653 0.01 0.1 1
0.01
0.1 1 10 100
VCE - Collector Voltage (Volts) IC - Collector Current (Amps)

Safe Operating Area Switching Speeds

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