This document discusses channel length modulation in n-channel MOSFETs operating in saturation mode and how it affects the transistor's I-V characteristics. It also covers punch through, which occurs when the depletion regions of the source and drain extend and merge under certain biases, and hot-carrier degradation, where high electric fields cause carriers to gain enough energy to damage the transistor.
This document discusses channel length modulation in n-channel MOSFETs operating in saturation mode and how it affects the transistor's I-V characteristics. It also covers punch through, which occurs when the depletion regions of the source and drain extend and merge under certain biases, and hot-carrier degradation, where high electric fields cause carriers to gain enough energy to damage the transistor.